CN102800735B - 光电转换元件和光电转换装置 - Google Patents
光电转换元件和光电转换装置 Download PDFInfo
- Publication number
- CN102800735B CN102800735B CN201210153336.2A CN201210153336A CN102800735B CN 102800735 B CN102800735 B CN 102800735B CN 201210153336 A CN201210153336 A CN 201210153336A CN 102800735 B CN102800735 B CN 102800735B
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- Prior art keywords
- semiconductor layer
- photoelectric conversion
- layer
- type semiconductor
- insulating film
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 79
- 239000004065 semiconductor Substances 0.000 claims abstract description 275
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 392
- 239000011229 interlayer Substances 0.000 claims description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 229920005591 polysilicon Polymers 0.000 claims description 13
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 9
- 238000003384 imaging method Methods 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 description 18
- 230000004048 modification Effects 0.000 description 16
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
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- 235000012239 silicon dioxide Nutrition 0.000 description 4
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- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
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- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
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- 239000011800 void material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-119502 | 2011-05-27 | ||
| JP2011119502 | 2011-05-27 | ||
| JP2011177460A JP6028233B2 (ja) | 2011-05-27 | 2011-08-15 | 光電変換素子および光電変換装置 |
| JP2011-177460 | 2011-08-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102800735A CN102800735A (zh) | 2012-11-28 |
| CN102800735B true CN102800735B (zh) | 2017-10-24 |
Family
ID=47199789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210153336.2A Expired - Fee Related CN102800735B (zh) | 2011-05-27 | 2012-05-17 | 光电转换元件和光电转换装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9312421B2 (https=) |
| JP (1) | JP6028233B2 (https=) |
| CN (1) | CN102800735B (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5439984B2 (ja) * | 2009-07-03 | 2014-03-12 | ソニー株式会社 | 光電変換装置および放射線撮像装置 |
| CN103219431A (zh) * | 2013-04-19 | 2013-07-24 | 京东方科技集团股份有限公司 | 光电二极管及其制造方法、x射线探测器基板及其制造方法 |
| JP2015053415A (ja) | 2013-09-09 | 2015-03-19 | 株式会社東芝 | フォトダイオード |
| JP2015177155A (ja) * | 2014-03-18 | 2015-10-05 | セイコーエプソン株式会社 | 光電変換装置および電子機器 |
| KR101554822B1 (ko) | 2014-04-18 | 2015-09-22 | 하이디스 테크놀로지 주식회사 | 디지털 엑스레이 디텍터용 pin 다이오드 및 그 제조 방법 |
| KR102344782B1 (ko) | 2014-06-13 | 2021-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 입력 장치 및 입출력 장치 |
| JP2016048168A (ja) * | 2014-08-27 | 2016-04-07 | ソニー株式会社 | 放射線検出器、撮像装置、および撮像システム |
| CN104681655A (zh) * | 2015-01-12 | 2015-06-03 | 京东方科技集团股份有限公司 | 一种探测基板及其制备方法、探测器 |
| CN104992948B (zh) * | 2015-06-03 | 2018-07-06 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板及其制作方法 |
| JP6578930B2 (ja) * | 2015-12-18 | 2019-09-25 | セイコーエプソン株式会社 | 光電変換素子の製造方法、光電変換素子および光電変換装置 |
| CN105810765B (zh) | 2016-03-21 | 2017-08-11 | 京东方科技集团股份有限公司 | Pin光电二极管、x射线探测像元、装置及其探测方法 |
| KR102421726B1 (ko) | 2017-09-25 | 2022-07-15 | 삼성전자주식회사 | 이미지 센서 |
| CN109065558B (zh) * | 2018-08-09 | 2021-10-12 | 京东方科技集团股份有限公司 | 一种背板及其制作方法、检测装置 |
| CN109192701B (zh) * | 2018-08-31 | 2020-12-08 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示装置 |
| CN109686808B (zh) * | 2018-12-27 | 2021-07-23 | 厦门天马微电子有限公司 | 二极管及其制作方法、阵列基板、显示面板 |
| JP6775641B1 (ja) | 2019-06-18 | 2020-10-28 | Ｎｔｔエレクトロニクス株式会社 | 受光素子および光回路の遮光構造 |
| CN114342079B (zh) * | 2019-08-30 | 2025-01-07 | 株式会社日本显示器 | 检测装置 |
| JP7446785B2 (ja) * | 2019-11-18 | 2024-03-11 | 株式会社ジャパンディスプレイ | 検出装置及び表示装置 |
| JP7446786B2 (ja) * | 2019-11-18 | 2024-03-11 | 株式会社ジャパンディスプレイ | 検出装置及び表示装置 |
| JP7496208B2 (ja) * | 2019-12-23 | 2024-06-06 | 株式会社ジャパンディスプレイ | 検出装置 |
| JP7443077B2 (ja) | 2020-02-03 | 2024-03-05 | 株式会社ジャパンディスプレイ | 検出装置 |
| JP2022029179A (ja) * | 2020-08-04 | 2022-02-17 | 株式会社ジャパンディスプレイ | 検出装置 |
| JP2022062644A (ja) * | 2020-10-08 | 2022-04-20 | 株式会社ジャパンディスプレイ | 検出装置 |
| WO2022176503A1 (ja) * | 2021-02-22 | 2022-08-25 | 株式会社ジャパンディスプレイ | 検出装置 |
| CN113113354B (zh) * | 2021-03-18 | 2022-04-08 | 武汉华星光电技术有限公司 | 光学器件及其制备方法、显示面板 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002050754A (ja) * | 2000-05-08 | 2002-02-15 | Canon Inc | 半導体装置とその製造方法、放射線検出装置とそれを用いた放射線検出システム |
| JP2003262674A (ja) * | 2002-03-11 | 2003-09-19 | Canon Inc | 画像検出器 |
| GB0219771D0 (en) * | 2002-08-24 | 2002-10-02 | Koninkl Philips Electronics Nv | Manufacture of electronic devices comprising thin-film circuit elements |
| JP2008040488A (ja) * | 2006-07-12 | 2008-02-21 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置 |
| JP2008277710A (ja) | 2007-05-07 | 2008-11-13 | Sony Corp | 受光素子およびそれを備えた表示装置 |
| JP2009229502A (ja) * | 2008-03-19 | 2009-10-08 | Sony Corp | 表示装置、および、その製造方法 |
| JP2010056397A (ja) * | 2008-08-29 | 2010-03-11 | Fujifilm Corp | Ｘ線検出素子 |
| JP5439984B2 (ja) * | 2009-07-03 | 2014-03-12 | ソニー株式会社 | 光電変換装置および放射線撮像装置 |
| JP5481127B2 (ja) * | 2009-08-19 | 2014-04-23 | 株式会社ジャパンディスプレイ | センサ素子およびその駆動方法、センサ装置、ならびに入力機能付き表示装置および電子機器 |
-
2011
- 2011-08-15 JP JP2011177460A patent/JP6028233B2/ja not_active Expired - Fee Related
-
2012
- 2012-05-17 CN CN201210153336.2A patent/CN102800735B/zh not_active Expired - Fee Related
- 2012-05-17 US US13/474,061 patent/US9312421B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP6028233B2 (ja) | 2016-11-16 |
| CN102800735A (zh) | 2012-11-28 |
| US20120299070A1 (en) | 2012-11-29 |
| US9312421B2 (en) | 2016-04-12 |
| JP2013012696A (ja) | 2013-01-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160912 Address after: Kanagawa Applicant after: SONY semiconductor solutions Address before: Tokyo, Japan Applicant before: Sony Corp |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171024 Termination date: 20210517 |
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| CF01 | Termination of patent right due to non-payment of annual fee |