JP5988744B2 - 撮像装置、その制御方法、および制御プログラム - Google Patents

撮像装置、その制御方法、および制御プログラム Download PDF

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JP5988744B2
JP5988744B2 JP2012159603A JP2012159603A JP5988744B2 JP 5988744 B2 JP5988744 B2 JP 5988744B2 JP 2012159603 A JP2012159603 A JP 2012159603A JP 2012159603 A JP2012159603 A JP 2012159603A JP 5988744 B2 JP5988744 B2 JP 5988744B2
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pixel
signal processing
signal
processing means
sensitivity
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JP2012159603A
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Japanese (ja)
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JP2014022931A5 (enExample
JP2014022931A (ja
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佳朗 阿波谷
佳朗 阿波谷
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Canon Inc
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Canon Inc
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Priority to JP2012159603A priority Critical patent/JP5988744B2/ja
Priority to US13/942,036 priority patent/US9036052B2/en
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Publication of JP2014022931A5 publication Critical patent/JP2014022931A5/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2012159603A 2012-07-18 2012-07-18 撮像装置、その制御方法、および制御プログラム Expired - Fee Related JP5988744B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012159603A JP5988744B2 (ja) 2012-07-18 2012-07-18 撮像装置、その制御方法、および制御プログラム
US13/942,036 US9036052B2 (en) 2012-07-18 2013-07-15 Image pickup apparatus that uses pixels different in sensitivity, method of controlling the same, and storage medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012159603A JP5988744B2 (ja) 2012-07-18 2012-07-18 撮像装置、その制御方法、および制御プログラム

Publications (3)

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JP2014022931A JP2014022931A (ja) 2014-02-03
JP2014022931A5 JP2014022931A5 (enExample) 2015-08-27
JP5988744B2 true JP5988744B2 (ja) 2016-09-07

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US (1) US9036052B2 (enExample)
JP (1) JP5988744B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055500A (ja) * 2011-09-02 2013-03-21 Sony Corp 固体撮像素子およびカメラシステム
JP6192391B2 (ja) * 2013-07-05 2017-09-06 キヤノン株式会社 光電変換システム
TWI672952B (zh) 2014-03-06 2019-09-21 日商新力股份有限公司 影像擷取器件、控制方法及影像擷取裝置
JP6418785B2 (ja) 2014-05-21 2018-11-07 キヤノン株式会社 撮像素子、その制御方法、および制御プログラム、並びに信号処理装置
CN111968998B (zh) * 2014-12-26 2024-12-13 松下知识产权经营株式会社 摄像装置
TWI684363B (zh) * 2015-02-13 2020-02-01 日商新力股份有限公司 圖像感測器、讀出控制方法、及電子機器
US9743025B2 (en) * 2015-12-30 2017-08-22 Omnivision Technologies, Inc. Method and system of implementing an uneven timing gap between each image capture in an image sensor
JP6750852B2 (ja) * 2016-05-11 2020-09-02 キヤノン株式会社 撮像装置及び撮像装置の制御方法
JP2018011162A (ja) * 2016-07-13 2018-01-18 ソニー株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
EP3651450A4 (en) * 2017-07-07 2022-03-30 Brillnics Singapore Pte. Ltd. SOLID STATE IMAGING DEVICE, METHOD OF OPERATION FOR THE SOLID STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT
US11133339B2 (en) * 2018-04-16 2021-09-28 Canon Kabushiki Kaisha Image sensor, image capturing apparatus and image processing apparatus
JP2020053771A (ja) * 2018-09-25 2020-04-02 オリンパス株式会社 画像処理装置、撮像装置
KR102660132B1 (ko) * 2018-12-11 2024-04-25 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치 및 전자 기기
CN114187870B (zh) 2020-09-14 2023-05-09 京东方科技集团股份有限公司 光电检测电路及其驱动方法、显示装置及其制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7738013B2 (en) * 2001-05-29 2010-06-15 Samsung Electronics Co., Ltd. Systems and methods for power conservation in a CMOS imager
JP4423112B2 (ja) 2004-06-01 2010-03-03 キヤノン株式会社 固体撮像装置および撮像システム
JP4830270B2 (ja) * 2004-06-14 2011-12-07 ソニー株式会社 固体撮像装置および固体撮像装置の信号処理方法
JP4193768B2 (ja) * 2004-07-16 2008-12-10 ソニー株式会社 データ処理方法並びに物理量分布検知の半導体装置および電子機器
US7978240B2 (en) * 2005-10-03 2011-07-12 Konica Minolta Photo Imaging, Inc. Enhancing image quality imaging unit and image sensor
JP4609428B2 (ja) * 2006-12-27 2011-01-12 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
US8144214B2 (en) * 2007-04-18 2012-03-27 Panasonic Corporation Imaging apparatus, imaging method, integrated circuit, and storage medium
JP4661912B2 (ja) 2008-07-18 2011-03-30 ソニー株式会社 固体撮像素子およびカメラシステム
JP2011015219A (ja) 2009-07-02 2011-01-20 Toshiba Corp 固体撮像装置
JP5150795B2 (ja) * 2010-09-27 2013-02-27 富士フイルム株式会社 撮像装置及び撮像方法

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US20140022401A1 (en) 2014-01-23
JP2014022931A (ja) 2014-02-03
US9036052B2 (en) 2015-05-19

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