JP5987815B2 - アッシング方法およびアッシング装置 - Google Patents

アッシング方法およびアッシング装置 Download PDF

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Publication number
JP5987815B2
JP5987815B2 JP2013252844A JP2013252844A JP5987815B2 JP 5987815 B2 JP5987815 B2 JP 5987815B2 JP 2013252844 A JP2013252844 A JP 2013252844A JP 2013252844 A JP2013252844 A JP 2013252844A JP 5987815 B2 JP5987815 B2 JP 5987815B2
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Japan
Prior art keywords
gap
gas
processed
transmission window
light transmission
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JP2013252844A
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English (en)
Japanese (ja)
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JP2015111611A (ja
JP2015111611A5 (cg-RX-API-DMAC7.html
Inventor
廣瀬　賢一
賢一 廣瀬
大輝 堀部
大輝 堀部
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Ushio Denki KK
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Ushio Denki KK
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Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP2013252844A priority Critical patent/JP5987815B2/ja
Priority to PCT/JP2014/076881 priority patent/WO2015083435A1/ja
Publication of JP2015111611A publication Critical patent/JP2015111611A/ja
Publication of JP2015111611A5 publication Critical patent/JP2015111611A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2013252844A 2013-12-06 2013-12-06 アッシング方法およびアッシング装置 Active JP5987815B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013252844A JP5987815B2 (ja) 2013-12-06 2013-12-06 アッシング方法およびアッシング装置
PCT/JP2014/076881 WO2015083435A1 (ja) 2013-12-06 2014-10-08 アッシング方法およびアッシング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013252844A JP5987815B2 (ja) 2013-12-06 2013-12-06 アッシング方法およびアッシング装置

Publications (3)

Publication Number Publication Date
JP2015111611A JP2015111611A (ja) 2015-06-18
JP2015111611A5 JP2015111611A5 (cg-RX-API-DMAC7.html) 2016-02-25
JP5987815B2 true JP5987815B2 (ja) 2016-09-07

Family

ID=53273212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013252844A Active JP5987815B2 (ja) 2013-12-06 2013-12-06 アッシング方法およびアッシング装置

Country Status (2)

Country Link
JP (1) JP5987815B2 (cg-RX-API-DMAC7.html)
WO (1) WO2015083435A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6550964B2 (ja) * 2015-06-26 2019-07-31 ウシオ電機株式会社 光処理装置およびその製造方法
JP6763243B2 (ja) * 2016-09-07 2020-09-30 ウシオ電機株式会社 光照射器
JP6828493B2 (ja) * 2017-02-15 2021-02-10 ウシオ電機株式会社 光照射装置および光照射方法
JP6780531B2 (ja) * 2017-02-15 2020-11-04 ウシオ電機株式会社 光照射装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3624384A1 (de) * 1985-07-19 1987-01-29 Fusion Systems Corp Vorrichtung zum entfernen einer photoresistschicht von einem substrat
JPH0864542A (ja) * 1994-08-25 1996-03-08 Plasma Syst:Kk 半導体処理装置用真空チャンバーおよびその製造方法
JP2000323455A (ja) * 1999-05-07 2000-11-24 Hitachi Ltd アッシング装置
US6897162B2 (en) * 2003-10-20 2005-05-24 Wafermasters, Inc. Integrated ashing and implant annealing method
JP2011014696A (ja) * 2009-07-01 2011-01-20 Mitsubishi Chemicals Corp 有機質物除去方法

Also Published As

Publication number Publication date
JP2015111611A (ja) 2015-06-18
WO2015083435A1 (ja) 2015-06-11

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