WO2015083435A1 - アッシング方法およびアッシング装置 - Google Patents

アッシング方法およびアッシング装置 Download PDF

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Publication number
WO2015083435A1
WO2015083435A1 PCT/JP2014/076881 JP2014076881W WO2015083435A1 WO 2015083435 A1 WO2015083435 A1 WO 2015083435A1 JP 2014076881 W JP2014076881 W JP 2014076881W WO 2015083435 A1 WO2015083435 A1 WO 2015083435A1
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WO
WIPO (PCT)
Prior art keywords
transmission window
light transmission
gap
ashing
processing gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2014/076881
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English (en)
French (fr)
Japanese (ja)
Inventor
廣瀬　賢一
大輝 堀部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
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Ushio Denki KK
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Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Publication of WO2015083435A1 publication Critical patent/WO2015083435A1/ja
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Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Definitions

  • the present invention relates to an ashing method and an ashing device using vacuum ultraviolet rays. More specifically, the present invention relates to a photo-ashing process for resist in the manufacturing process of semiconductors, liquid crystals, etc., a process for removing resist adhering to the pattern surface of the template in the nanoimprint method, and a dry cleaning process for glass substrates and silicon wafers for liquid crystal
  • the present invention relates to an ashing method and an ashing apparatus that can be suitably applied to desmear processing in a printed circuit board manufacturing process.
  • a resist optical ashing process and a dry cleaning process for a glass substrate or a silicon wafer are performed in a manufacturing process of a semiconductor element, a liquid crystal panel, etc.
  • a resist optical ashing process and a dry cleaning process for a glass substrate or a silicon wafer are performed in a manufacturing process of a semiconductor element, a liquid crystal panel, etc.
  • the resist attached to the pattern surface of the template is removed.
  • desmearing and surface roughening of the insulating layer are performed on the wiring board material.
  • an ashing method using vacuum ultraviolet rays is known (see, for example, Patent Document 1).
  • an object to be processed is disposed so as to face a light transmission window that transmits vacuum ultraviolet rays through a gap. Then, while supplying a processing gas containing, for example, oxygen to the gap between the light transmission window and the object to be processed, vacuum ultraviolet rays are irradiated toward the object to be processed through the light transmission window. Thereby, oxygen and oxygen radicals are generated as a result of reaction of oxygen in the processing gas flowing through the gap between the light transmission window and the object to be processed. Then, when these ozone and oxygen radicals come into contact with the surface to be processed, ashing is performed on the surface to be processed.
  • the processing gas is supplied so as to circulate along the one direction in the gap between the light transmission window and the object to be processed.
  • oxygen radicals and the like generated by irradiation with vacuum ultraviolet rays and decomposition gas such as CO 2 generated by ashing the object to be processed also cause a gap between the light transmission window and the object to be processed. It circulates along that one direction.
  • the flow rate of the processing gas in the gap between the light transmission window and the object to be processed is large, the generated oxygen radicals immediately move downstream from the gap between the light transmission window and the object to be processed. For this reason, the concentration of oxygen radicals in the gap becomes low, and as a result, the required ashing process becomes difficult.
  • the decomposition gas of the object to be processed is immediately downstream from the gap between the light transmission window and the object to be processed by the ashing process. It does not move, thereby increasing the concentration of cracked gas in the gap. Therefore, the oxygen concentration in the gap is relatively low. Along with this, a sufficient amount of oxygen radicals and the like are not generated, and as a result, the required ashing process becomes difficult.
  • An object of the present invention is to provide an ashing method and an ashing apparatus capable of reliably performing a required ashing process on a workpiece.
  • the ashing method of the present invention is a processing gas containing an active species source in a gap between the light transmission window and the object to be processed, which is disposed so as to face a light transmission window that transmits vacuum ultraviolet rays. Irradiating vacuum ultraviolet rays through the light transmission window while supplying The gap between the light transmission window and the object to be processed is 1 mm or less, The flow rate of the processing gas flowing through the gap is controlled to 1 to 100 mm / sec.
  • the pressure of the processing gas in the gap is greater than 1 atmosphere and 2 atmospheres or less.
  • the processing gas preferably contains at least ozone as an active species source.
  • An ashing device is disposed between a mounting table on which an object to be processed is mounted, an ultraviolet emission lamp that emits vacuum ultraviolet rays to the object to be processed, and the object to be processed and the ultraviolet emission lamp.
  • an ashing device having a light transmission window that transmits vacuum ultraviolet rays from the ultraviolet emission lamp The gap between the light transmission window and the object to be processed is 1 mm or less, Gas supply means for supplying a processing gas containing an active species source in the gap; Gas flow rate control means for controlling the flow rate of the processing gas flowing through the gap to 1 to 100 mm / sec is provided.
  • the gap between the light transmission window and the workpiece is separated from the workpiece.
  • An increase in the concentration of cracked gas such as CO 2 is suppressed. That is, since a decrease in the concentration of the active species source in the gap is suppressed, a sufficient amount of active species can be generated.
  • the flow velocity of the processing gas flowing through the gap between the light transmission window and the object to be processed is 100 mm / sec or less, the generated active species immediately downstream in the gap between the light transmission window and the object to be processed. The movement to the side region is suppressed. As a result, the concentration of the active species is suppressed from decreasing. Therefore, a required ashing process can be reliably performed on the workpiece.
  • FIG. 1 is a cross-sectional view for explaining the structure of an example of an ashing apparatus for carrying out the ashing method of the present invention.
  • a mounting table 10 on which a substantially flat workpiece W is mounted is provided.
  • This mounting table 10 has a flat rectangular workpiece mounting surface 11.
  • a rectangular frame-shaped spacer member 15 disposed along the peripheral edge of the workpiece mounting surface 11 and a seal disposed on the spacer member 15.
  • the light source unit 20 is disposed via the member 16.
  • the light source unit 20 includes a substantially rectangular parallelepiped box-shaped casing 21 having an opening on the lower surface.
  • a light transmission window 30 that transmits vacuum ultraviolet rays is airtightly provided at the opening of the casing 21.
  • a sealed lamp housing chamber S1 is formed inside the casing 21.
  • a processing chamber S ⁇ b> 2 in which the workpiece W is ashed is formed between the light transmission window 30 and the mounting table 10.
  • a plurality of rod-shaped ultraviolet emission lamps 25 are arranged in parallel to each other in the same horizontal plane.
  • a reflection mirror 26 is provided above the ultraviolet emitting lamp 25 in the lamp housing chamber S1.
  • the casing 21 is provided with a gas purge means (not shown) for purging the inside of the lamp housing chamber S1 with an inert gas such as nitrogen gas.
  • the ultraviolet emitting lamp 25 various known lamps can be used as long as they emit vacuum ultraviolet rays.
  • a low-pressure mercury lamp that emits vacuum ultraviolet rays of 185 nm, a xenon excimer lamp that emits vacuum ultraviolet rays having a center wavelength of 172 nm, or xenon gas is enclosed in an arc tube.
  • a fluorescent excimer lamp in which a phosphor emitting, for example, 190 nm of vacuum ultraviolet rays is applied to the inner surface of the arc tube can be exemplified. As shown in FIG.
  • any material may be used as long as it has transparency to vacuum ultraviolet rays emitted from the ultraviolet emission lamp 25 and has resistance to vacuum ultraviolet rays and generated active species.
  • synthetic quartz glass can be used as such a material.
  • the mounting table 10 is formed with a gas supply hole 12 and a gas discharge hole 13 that pass through the mounting table 10 in the thickness direction.
  • the opening shape in each of the gas supply hole 12 and the gas discharge hole 13 is a band shape extending along the lamp axial direction of the ultraviolet emission lamp 25.
  • the gas supply holes 12 and the gas discharge holes 13 are formed at positions separated from each other in the arrangement direction of the ultraviolet emission lamps 25.
  • the workpiece W is disposed on the workpiece mounting surface 11 of the mounting table 10 at a position between the gas supply holes 12 and the gas discharge holes 13 in the arrangement direction of the ultraviolet emission lamps 25. Is done.
  • the gas supply hole 12 is connected to a processing gas supply means 40 for supplying a processing gas to the processing chamber S2 through a gas pipe 41.
  • the gas pipe 41 is provided with a gas flow rate control means 45 for controlling the flow rate of the processing gas flowing on the processing surface Wa of the workpiece W.
  • the active species source contained in the processing gas may be any source that generates active species upon receiving vacuum ultraviolet rays.
  • Specific examples of such active species sources include those that generate oxygen radicals such as oxygen (O 2 ) and ozone (O 3 ), those that generate OH radicals such as water vapor, and those that generate halogen radicals (for example, Those that generate fluorine radicals such as carbon tetrafluoride (CF 4 ), those that generate chlorine radicals such as chlorine (Cl 2 ), and those that generate bromine radicals such as hydrogen bromide (HBr)).
  • oxygen radicals such as oxygen (O 2 ) and ozone (O 3 )
  • those that generate OH radicals such as water vapor
  • halogen radicals for example, Those that generate fluorine radicals such as carbon tetrafluoride (CF 4 ), those that generate chlorine radicals such as chlorine (Cl 2 ), and those that generate bromine radicals such as hydrogen bromide (HBr)
  • those that generate oxygen radicals
  • the concentration of the active species source in the processing gas is preferably 50% by volume or more, more preferably 70% by volume or more.
  • a sufficient amount of active species is generated when the processing gas receives vacuum ultraviolet rays, so that the intended ashing process can be performed reliably.
  • the concentration of ozone (O 3 ) in the processing gas is preferably 0.1 to 12% by volume. More preferably, it is 1 to 12% by volume.
  • the mounting table 10 is provided with heating means (not shown) for heating the workpiece W.
  • the action of the active species can be promoted as the temperature of the surface Wa of the workpiece W increases. Therefore, the ashing process for the workpiece W can be performed efficiently.
  • the heated processing gas can be supplied into the processing chamber S2. Therefore, the temperature of the processing surface Wa of the workpiece W can be raised also by the processing gas flowing along the processing surface Wa of the workpiece W, and as a result, the above effect can be further ensured. Can get to.
  • the heating condition by the heating means is preferably such that the temperature of the surface Wa of the workpiece W is, for example, 80 ° C. or higher and 340 ° C. or lower, more preferably 80 ° C. or higher and 200 ° C. or lower. It is a condition.
  • the ashing process of the workpiece W is performed using the above ashing apparatus as follows. First, in a state where the light source unit 20 is removed from the mounting table 10, the processing target is placed at a position between the gas supply hole 12 and the gas discharge hole 13 on the processing object mounting surface 11 of the mounting table 10. An object W is placed. Next, the light source unit 20 is disposed on the mounting table 10 via the spacer member 15 and the seal member 16. Thereby, the light transmission window 30 in the light source unit 20 is disposed so as to face the processing surface Wa of the processing object W via the gap. Moreover, the to-be-processed object W is heated via the mounting base 10 by a heating means as needed.
  • an inert gas is supplied to the lamp housing chamber S1 by the gas purge means. Thereby, the inside of the lamp housing chamber S1 is purged by the inert gas.
  • the processing gas is supplied to the processing chamber S2 through the gas supply hole 12 by the processing gas supply means.
  • the processing gas supplied into the processing chamber S2 is discharged from the processing chamber S2 through the gas discharge hole 13.
  • the processing gas from the gas supply hole 12 flows through the gap between the light transmission window 30 and the workpiece W toward the gas discharge hole 13.
  • the flow rate of the processing gas flowing through the gap between the light transmission window 30 and the workpiece W is controlled by the gas flow rate control means 45.
  • the ultraviolet emission lamp 25 in the light source unit 20 is turned on.
  • the vacuum ultraviolet rays from the ultraviolet emission lamp 25 are applied to the workpiece W through the light transmission window 30 and to the processing gas flowing through the gap between the light transmission window 30 and the workpiece W.
  • active species are generated by decomposing the active species source contained in the processing gas.
  • the ashing of the surface Wa of the workpiece W is performed by the vacuum ultraviolet rays reaching the surface Wa of the workpiece W and the active species generated by the vacuum ultraviolet rays.
  • the thickness h of the gap between the light transmission window 30 and the workpiece W is 1 mm or less, preferably 0.1 to 0.7 mm.
  • the gap thickness h exceeds 1 mm, most of the vacuum ultraviolet rays are absorbed by the processing gas before the vacuum ultraviolet rays reach the workpiece W from the light transmission window 30. For this reason, the amount of active species generated near the surface Wa of the workpiece W is small, and as a result, the concentration of the active species near the surface Wa of the workpiece W decreases.
  • rate of the organic substance which exists on the to-be-processed surface Wa of the to-be-processed object W by a vacuum ultraviolet ray falls, the ashing processing capability falls.
  • the flow velocity of the processing gas flowing through the gap between the light transmission window 30 and the workpiece W is 1 to 100 mm / sec, preferably 2 to 50 mm / sec.
  • the concentration of cracked gas such as CO 2 generated from the workpiece W in the gap increases.
  • the concentration of the active species source becomes low, it becomes difficult to generate a sufficient amount of active species.
  • the concentration of active species in the gap is low.
  • the thickness h of the gap between the light transmission window 30 and the workpiece W and the height of the processing chamber S2 are different.
  • the flow velocity of the processing gas flowing through the gap between the light transmission window 30 and the workpiece W can be obtained as follows.
  • the cross-sectional area C of the cross section perpendicular to the flow direction of the processing gas in the gas flow space of the processing chamber S2 is the flow space for the processing gas on the workpiece W (the gap between the light transmission window 30 and the workpiece W).
  • V Q / C
  • V is the flow rate of the processing gas (unit: mm / sec)
  • Q is the flow rate of the processing gas supplied to the flow path of the processing gas (unit: mm 3 / sec)
  • C is the processing chamber. It is a cross-sectional area (unit: mm 2 ) of a cross section perpendicular to the flow direction of the processing gas in the gas flow space of S2.
  • the flow rate of the processing gas supplied to the flow path of the processing gas is the flow rate of the processing gas supplied to the processing chamber S2, and this value corresponds to Q in the above equation (1).
  • the flow path model of the processing gas is set based on the shape and arrangement of the mounting table 10, the workpiece W, the light transmission window 30, the seal member 16, and the like.
  • the mounting table 10 is provided with a recess for disposing an object to be processed that matches the shape of the object to be processed W, so that the thickness h of the gap between the light transmission window 30 and the object to be processed W, and the processing
  • the height of the chamber S2 is the same (see FIG. 3)
  • the flow rate of the processing gas flowing through the gap between the light transmission window 30 and the workpiece W is the ratio of the cross-sectional area C2 to the cross-sectional area C1. Regardless of the value, it can be obtained by the above equation (1).
  • the pressure of the processing gas in the gap between the light transmission window 30 and the workpiece W is preferably greater than 1 atmosphere and 2 atmospheres or less.
  • the pressure of the processing gas in the gap is 1 atm or less, the number of atoms of the active species source is insufficient, the concentration of active species is lowered, and the ashing ability is reduced.
  • the pressure of the processing gas in the gap exceeds 2 atm, the light transmission window 30 is damaged due to the pressure difference in the lamp housing chamber S1, and the gap between the processing surface Wa due to the deflection of the light transmission window 30 is increased. Many problems such as leakage of processing gas to the outer periphery of the apparatus occur. In addition, it is difficult to design the apparatus, which causes problems that the structure of the apparatus becomes complicated and the manufacturing cost of the apparatus increases.
  • the gap is generated from the workpiece W in the gap.
  • An increase in the concentration of cracked gas such as CO 2 is suppressed. That is, since the concentration of the active species source in the gap is suppressed to be relatively low, a sufficient amount of active species can be generated.
  • the flow velocity of the processing gas flowing through the gap between the light transmission window 30 and the workpiece W is 100 mm / sec or less, the active species generated in the gap is suppressed from immediately moving to the downstream side. . Therefore, it is possible to suppress the concentration of active species in the gap from becoming low. Therefore, a required ashing process can be reliably performed on the workpiece W.
  • the ashing apparatus shown in FIG. 1 is of a so-called batch irradiation type, but may be of a scan type as shown in FIG.
  • the ashing apparatus shown in FIG. 2 is provided above the processing chamber forming member 35 and the processing chamber forming member 35 that forms the processing chamber S2 in which the ashing process of the workpiece W is performed.
  • the light source unit 20a and driving means (not shown) for moving one of the light source unit 20a and the processing chamber forming member 35 in the horizontal direction relative to the other are provided.
  • the processing chamber forming member 35 is moved in the horizontal direction with respect to the light source unit 20a by the driving means.
  • the moving direction of the processing chamber forming member 35 is indicated by a white arrow.
  • a light transmission window 30 that transmits vacuum ultraviolet rays is disposed above the mounting table 10 on which the workpiece W is mounted so as to face the mounting table 10.
  • the light transmission window 30 is held by a light transmission window holding frame 36 fixed to the peripheral side surface of the mounting table 10.
  • the processing chamber S2 is formed by being surrounded by the mounting table 10, the light transmission window 30, and the light transmission window holding frame 36.
  • the mounting table 10 and the light transmission window 30 have the same configuration as the ashing device shown in FIG.
  • the light source unit 20a is provided with a casing 21a that opens downward.
  • a rectangular flat box-shaped ultraviolet emitting lamp 25a is provided in the casing 21a.
  • the casing 21a is provided with a gas flow path pipe 22 for circulating an inert gas (for example, nitrogen gas) in the casing 21a.
  • a processing gas supply means 40 for supplying a processing gas to the processing chamber S ⁇ b> 2 is connected to the gas supply hole 12 in the mounting table 10 through a gas pipe 41.
  • the gas pipe 41 is provided with a gas flow rate control means 45 for controlling the flow rate of the processing gas flowing on the processing surface Wa of the workpiece W.
  • the scan type ashing apparatus may be configured to include a plurality of processing chamber forming members.
  • a plurality of processing chamber forming members When an ashing process is performed on an object to be processed placed on the mounting table 10 in one processing chamber forming member, the object to be processed in another processing chamber forming member in a separate process in advance. Preparation work for the ashing process can be performed. Therefore, continuous ultraviolet irradiation processing can be performed on a plurality of objects to be processed, and as a result, processing efficiency can be improved.
  • the ashing apparatus includes a processing chamber forming member 35 that forms a processing chamber S2 in which an ashing process of the workpiece W is performed, and a light source unit 20b provided above the processing chamber forming member 35.
  • the light transmission window 30 is disposed on the mounting table 10 on which the workpiece W is mounted via the rectangular frame spacer member 15 a so as to face the mounting table 10. ing.
  • the light transmission window 30 is held by a light transmission window holding frame 36a fixed to the peripheral side surface of the mounting table 10 via a seal member 16a.
  • the processing chamber S2 is formed by being surrounded by the mounting table 10, the light transmission window 30, and the light transmission window holding frame 36a.
  • the mounting table 10 is formed with a gas supply hole 12 and a gas discharge hole 13 that pass through the mounting table 10 in the thickness direction.
  • the opening shape in each of the gas supply hole 12 and the gas discharge hole 13 is a band extending along the longitudinal direction of the ultraviolet emission lamp 25b (the direction perpendicular to the paper surface in the drawing).
  • the gas supply hole 12 and the gas discharge hole 13 are formed at positions separated from each other in a direction perpendicular to the longitudinal direction of the ultraviolet emission lamp 25b (the left-right direction in the drawing).
  • a recess having a shape suitable for the workpiece W is formed on the upper surface of the mounting table 10 at a position between the gas supply hole 12 and the gas discharge hole 13.
  • a processing gas supply means (not shown) for supplying a processing gas to the processing chamber S2 is connected to the gas supply hole 12 in the mounting table 10 via a gas pipe (not shown).
  • the gas pipe is provided with gas flow rate control means (not shown) for controlling the flow rate of the processing gas in the gap between the light transmission window 30 and the workpiece W.
  • the light source unit 20b is provided with a casing 21b that opens downward.
  • a rectangular flat box-shaped ultraviolet emitting lamp 25 b is provided in the vicinity of the light transmission window 30.
  • the casing 21b is provided with a gas flow channel pipe (not shown) for circulating nitrogen gas (inert gas) in the casing 21b.
  • the bottom of the via hole (copper foil) in the printed wiring board material was subjected to elemental analysis by energy dispersive X-ray spectroscopy (EDX), and the C / Cu ratio was measured. The results are shown in FIG. The C / Cu ratio at the bottom of the via hole before ashing is 0.80.
  • Example 3 The printed circuit board material was ashed in the same manner as in Experimental Example 1 except that the thickness of the gap between the light transmission window 30 and the workpiece W was 1.0 mm and the irradiation time of vacuum ultraviolet rays was changed to 5 minutes. After performing, the C / Cu ratio was measured for the bottom of the via hole. The results are shown in FIG.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
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  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
PCT/JP2014/076881 2013-12-06 2014-10-08 アッシング方法およびアッシング装置 Ceased WO2015083435A1 (ja)

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JP6550964B2 (ja) * 2015-06-26 2019-07-31 ウシオ電機株式会社 光処理装置およびその製造方法
JP6763243B2 (ja) * 2016-09-07 2020-09-30 ウシオ電機株式会社 光照射器
JP6828493B2 (ja) * 2017-02-15 2021-02-10 ウシオ電機株式会社 光照射装置および光照射方法
JP6780531B2 (ja) * 2017-02-15 2020-11-04 ウシオ電機株式会社 光照射装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62290134A (ja) * 1985-07-19 1987-12-17 フュージョン・システムズ・コーポレーション フオトレジストの剥離装置
JP2000323455A (ja) * 1999-05-07 2000-11-24 Hitachi Ltd アッシング装置
JP2007513496A (ja) * 2003-10-20 2007-05-24 ウェーハマスターズ・インコーポレイテッド 統合されたアッシング及びインプラントアニーリング方法
JP2011014696A (ja) * 2009-07-01 2011-01-20 Mitsubishi Chemicals Corp 有機質物除去方法

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Publication number Priority date Publication date Assignee Title
JPH0864542A (ja) * 1994-08-25 1996-03-08 Plasma Syst:Kk 半導体処理装置用真空チャンバーおよびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62290134A (ja) * 1985-07-19 1987-12-17 フュージョン・システムズ・コーポレーション フオトレジストの剥離装置
JP2000323455A (ja) * 1999-05-07 2000-11-24 Hitachi Ltd アッシング装置
JP2007513496A (ja) * 2003-10-20 2007-05-24 ウェーハマスターズ・インコーポレイテッド 統合されたアッシング及びインプラントアニーリング方法
JP2011014696A (ja) * 2009-07-01 2011-01-20 Mitsubishi Chemicals Corp 有機質物除去方法

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