JP5965906B2 - 水性研磨組成物、及び酸化ケイ素誘電体膜とポリシリコン膜を含む基板の化学機械的な研磨方法 - Google Patents

水性研磨組成物、及び酸化ケイ素誘電体膜とポリシリコン膜を含む基板の化学機械的な研磨方法 Download PDF

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JP5965906B2
JP5965906B2 JP2013527714A JP2013527714A JP5965906B2 JP 5965906 B2 JP5965906 B2 JP 5965906B2 JP 2013527714 A JP2013527714 A JP 2013527714A JP 2013527714 A JP2013527714 A JP 2013527714A JP 5965906 B2 JP5965906 B2 JP 5965906B2
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acid
oxide
polishing composition
ceria
aqueous
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Japanese (ja)
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JP2013540849A (ja
JP2013540849A5 (OSRAM
Inventor
リー，ユツホウ
チュー，チョア‐チュイ
スンダール ヴェンカタラマン，シアム
スンダール ヴェンカタラマン，シアム
ラン ウイリアム チュー，ウェイ
ラン ウイリアム チュー，ウェイ
ウエイン ピンダー，ハーヴェイ
ウエイン ピンダー，ハーヴェイ
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BASF SE
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2013527714A 2010-09-08 2011-09-05 水性研磨組成物、及び酸化ケイ素誘電体膜とポリシリコン膜を含む基板の化学機械的な研磨方法 Expired - Fee Related JP5965906B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38071910P 2010-09-08 2010-09-08
US61/380,719 2010-09-08
PCT/IB2011/053867 WO2012032451A1 (en) 2010-09-08 2011-09-05 Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films

Publications (3)

Publication Number Publication Date
JP2013540849A JP2013540849A (ja) 2013-11-07
JP2013540849A5 JP2013540849A5 (OSRAM) 2014-10-30
JP5965906B2 true JP5965906B2 (ja) 2016-08-10

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JP2013527714A Expired - Fee Related JP5965906B2 (ja) 2010-09-08 2011-09-05 水性研磨組成物、及び酸化ケイ素誘電体膜とポリシリコン膜を含む基板の化学機械的な研磨方法

Country Status (11)

Country Link
US (1) US20130168348A1 (OSRAM)
EP (1) EP2428541B1 (OSRAM)
JP (1) JP5965906B2 (OSRAM)
KR (1) KR101906135B1 (OSRAM)
CN (1) CN103080256B (OSRAM)
IL (1) IL224645A (OSRAM)
MY (1) MY175638A (OSRAM)
RU (1) RU2573672C2 (OSRAM)
SG (2) SG10201606566SA (OSRAM)
TW (1) TWI525164B (OSRAM)
WO (1) WO2012032451A1 (OSRAM)

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TWI767355B (zh) * 2019-10-24 2022-06-11 美商慧盛材料美國責任有限公司 高氧化物移除速率的淺溝隔離化學機械平坦化組合物、系統及方法
JP2022061016A (ja) * 2020-10-05 2022-04-15 花王株式会社 酸化珪素膜用研磨液組成物
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TWI525164B (zh) 2016-03-11
WO2012032451A1 (en) 2012-03-15
MY175638A (en) 2020-07-03
IL224645A (en) 2017-11-30
CN103080256A (zh) 2013-05-01
JP2013540849A (ja) 2013-11-07
CN103080256B (zh) 2015-06-24
EP2428541A1 (en) 2012-03-14
US20130168348A1 (en) 2013-07-04
KR101906135B1 (ko) 2018-10-10
TW201226491A (en) 2012-07-01
RU2573672C2 (ru) 2016-01-27
EP2428541B1 (en) 2019-03-06
SG10201606566SA (en) 2016-09-29

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