JP5960997B2 - 基板ホルダー材料の加工方法とその方法で加工された基板ホルダー - Google Patents
基板ホルダー材料の加工方法とその方法で加工された基板ホルダー Download PDFInfo
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- JP5960997B2 JP5960997B2 JP2012021578A JP2012021578A JP5960997B2 JP 5960997 B2 JP5960997 B2 JP 5960997B2 JP 2012021578 A JP2012021578 A JP 2012021578A JP 2012021578 A JP2012021578 A JP 2012021578A JP 5960997 B2 JP5960997 B2 JP 5960997B2
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- 239000000758 substrate Substances 0.000 title claims description 244
- 239000000463 material Substances 0.000 title claims description 136
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- 238000005259 measurement Methods 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 29
- 230000006698 induction Effects 0.000 claims description 16
- 230000004044 response Effects 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 15
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 239000012467 final product Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000012937 correction Methods 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
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- 230000003647 oxidation Effects 0.000 description 1
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- 230000035699 permeability Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- 230000005855 radiation Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Description
Claims (8)
- 半導体基板上に種々の半導体材料の層状蒸着を誘導加熱を用いて形成するために、その第1の側上に該半導体基板を載置する基板ホルダーの材料加工方法であって、
前記基板ホルダー材料上の少なくとも1つの測定位置における第1の電気抵抗率を求めるステップと、
前記第1の電気抵抗率を第2の基準電気抵抗率と比較するステップと、
前記比較に対応させて基板ホルダー材料を適応させるステップと、
を備え、
前記適応された基板ホルダー材料は、基板ホルダー材料のバルク、前記基板ホルダー材料のバルクのスライスおよび基板ホルダーの群の内の1つを含むことを特徴とする方法。 - 半導体基板上に種々の半導体材料の層状蒸着を誘導加熱を用いて形成するために、その第1の側上に該半導体基板を載置する基板ホルダーの材料加工方法であって、
前記基板ホルダー材料上の少なくとも1つの測定位置における第1の電気抵抗率を求めるステップと、
前記第1の電気抵抗率を第2の基準電気抵抗率と比較するステップと、
前記比較に対応させて基板ホルダー材料を適応させるステップと、
を備え、
前記第2の基準電気抵抗率は、基板ホルダー材料のバルク、前記基板ホルダー材料のバルクのスライスおよび基板ホルダーの群の内の1つを含む基板ホルダー材料から求められることを特徴とする方法。 - 半導体基板上に種々の半導体材料の層状蒸着を誘導加熱を用いて形成するために、その第1の側上に該半導体基板を載置する基板ホルダーの材料加工方法であって、
前記基板ホルダー材料上の少なくとも1つの測定位置における第1の電気抵抗率を求めるステップと、
前記第1の電気抵抗率を第2の基準電気抵抗率と比較するステップと、
前記比較に対応させて基板ホルダー材料を適応させるステップと、
を備え、
前記基板ホルダーを適応させる前記ステップは、電気抵抗率の前記比較に対応して前記基板ホルダーを機械加工し、前記基板ホルダーの厚みを少なくとも部分的に適応させるステップを備えることを特徴とする方法。 - 半導体基板上に種々の半導体材料の層状蒸着を誘導加熱を用いて形成するために、その第1の側上に該半導体基板を載置する基板ホルダーの材料加工方法であって、
前記基板ホルダー材料上の少なくとも1つの測定位置における第1の電気抵抗率を求めるステップと、
前記第1の電気抵抗率を第2の基準電気抵抗率と比較するステップと、
前記比較に対応させて基板ホルダー材料を適応させるステップと、
を備え、
前記基板ホルダーを適応させる前記ステップに先立ち、前記基板ホルダー材料上に1つの基準点を定義し、前記少なくとも1つの測定位置を前記基準点に対して定義することを特徴とする方法。 - 半導体基板上に種々の半導体材料の層状蒸着を誘導加熱を用いて形成するために、その第1の側上に該半導体基板を載置する基板ホルダーの材料加工方法であって、
前記基板ホルダー材料上の少なくとも1つの測定位置における第1の電気抵抗率を求めるステップと、
前記第1の電気抵抗率を第2の基準電気抵抗率と比較するステップと、
前記比較に対応させて基板ホルダー材料を適応させるステップと、
を備え、
前記基板ホルダーを適応させる前記ステップは、電気抵抗率の前記比較に対応して前記基板ホルダーの多孔率を低減するステップを備えることを特徴とする方法。 - 前記基板ホルダーの多孔率を低減するステップは、電気抵抗率の前記比較に対応して硬化性樹脂を注入するステップを備えることを特徴とする請求項5に記載の方法。
- 半導体基板上に種々の半導体材料の層状蒸着を誘導加熱を用いて形成するために、その第1の側上に該半導体基板を載置する基板ホルダーの材料加工方法であって、
前記基板ホルダー材料上の少なくとも1つの測定位置における第1の電気抵抗率を求めるステップと、
前記第1の電気抵抗率を第2の基準電気抵抗率と比較するステップと、
前記比較に対応させて基板ホルダー材料を適応させるステップと、
を備え、
前記第1の電気抵抗率を求める前記ステップにおいて、基板ホルダー材料中に生成した渦電流、特に可変周波数を測定することを特徴とする方法。 - 前記渦電流は、可変周波数過電流を含むことを特徴とする請求項7に記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161439648P | 2011-02-04 | 2011-02-04 | |
US61/439,648 | 2011-02-04 | ||
NL2006146 | 2011-02-04 | ||
NL2006146A NL2006146C2 (en) | 2011-02-04 | 2011-02-04 | A method of processing substrate holder material as well as a substrate holder processed by such a method. |
Publications (2)
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JP2012178557A JP2012178557A (ja) | 2012-09-13 |
JP5960997B2 true JP5960997B2 (ja) | 2016-08-02 |
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JP2012021578A Active JP5960997B2 (ja) | 2011-02-04 | 2012-02-03 | 基板ホルダー材料の加工方法とその方法で加工された基板ホルダー |
Country Status (10)
Country | Link |
---|---|
US (1) | US9362157B2 (ja) |
EP (1) | EP2485252B1 (ja) |
JP (1) | JP5960997B2 (ja) |
KR (1) | KR101936957B1 (ja) |
CN (1) | CN102653884B (ja) |
NL (1) | NL2006146C2 (ja) |
PL (1) | PL2485252T3 (ja) |
RU (1) | RU2012103847A (ja) |
SG (1) | SG183617A1 (ja) |
TW (1) | TWI553764B (ja) |
Families Citing this family (2)
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JP6233209B2 (ja) * | 2014-06-30 | 2017-11-22 | 豊田合成株式会社 | サセプターとその製造方法 |
KR102088493B1 (ko) * | 2017-10-18 | 2020-03-12 | 신닛뽄테크노카본 가부시키가이샤 | 서셉터 |
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TW444266B (en) * | 1998-07-23 | 2001-07-01 | Canon Kk | Semiconductor substrate and method of producing same |
JP2001284259A (ja) * | 2000-03-30 | 2001-10-12 | Matsushita Electric Ind Co Ltd | 半導体ウエハ製造装置におけるウエハ用のホルダ |
JP2002289820A (ja) * | 2001-03-28 | 2002-10-04 | Nippon Steel Corp | Simox基板の製造方法およびsimox基板 |
TW541586B (en) * | 2001-05-25 | 2003-07-11 | Tokyo Electron Ltd | Substrate table, production method therefor and plasma treating device |
US20030016727A1 (en) * | 2001-06-29 | 2003-01-23 | Tokyo Electron Limited | Method of and apparatus for measuring and controlling substrate holder temperature using ultrasonic tomography |
ITMI20020306A1 (it) | 2002-02-15 | 2003-08-18 | Lpe Spa | Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso |
JP4059694B2 (ja) * | 2002-03-27 | 2008-03-12 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
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JP2007324194A (ja) * | 2006-05-30 | 2007-12-13 | Shin Etsu Handotai Co Ltd | Soiウエーハの評価方法 |
CN101240445A (zh) * | 2007-02-07 | 2008-08-13 | 中国科学院半导体研究所 | 一种碳化硅外延生长用加热器旋转装置 |
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WO2009041578A1 (ja) * | 2007-09-28 | 2009-04-02 | Bridgestone Corporation | ウェハ支持治具、ウェハ支持治具の温度測定方法、及びウェハ支持治具の温度測定システム |
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2011
- 2011-02-04 NL NL2006146A patent/NL2006146C2/en not_active IP Right Cessation
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2012
- 2012-01-31 EP EP12153363.2A patent/EP2485252B1/en active Active
- 2012-01-31 PL PL12153363T patent/PL2485252T3/pl unknown
- 2012-02-02 TW TW101103441A patent/TWI553764B/zh active
- 2012-02-03 JP JP2012021578A patent/JP5960997B2/ja active Active
- 2012-02-03 US US13/365,665 patent/US9362157B2/en active Active
- 2012-02-03 CN CN201210023874.XA patent/CN102653884B/zh active Active
- 2012-02-03 RU RU2012103847/28A patent/RU2012103847A/ru not_active Application Discontinuation
- 2012-02-03 SG SG2012007985A patent/SG183617A1/en unknown
- 2012-02-03 KR KR1020120011488A patent/KR101936957B1/ko active IP Right Grant
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Publication number | Publication date |
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SG183617A1 (en) | 2012-09-27 |
EP2485252B1 (en) | 2015-08-26 |
NL2006146C2 (en) | 2012-08-07 |
KR20120090835A (ko) | 2012-08-17 |
TWI553764B (zh) | 2016-10-11 |
RU2012103847A (ru) | 2013-08-10 |
US9362157B2 (en) | 2016-06-07 |
KR101936957B1 (ko) | 2019-01-09 |
TW201250908A (en) | 2012-12-16 |
CN102653884B (zh) | 2017-03-01 |
CN102653884A (zh) | 2012-09-05 |
US20120199063A1 (en) | 2012-08-09 |
PL2485252T3 (pl) | 2016-04-29 |
JP2012178557A (ja) | 2012-09-13 |
EP2485252A1 (en) | 2012-08-08 |
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