JP2012178557A - 基板ホルダー材料の加工方法とその方法で加工された基板ホルダー - Google Patents
基板ホルダー材料の加工方法とその方法で加工された基板ホルダー Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 247
- 239000000463 material Substances 0.000 title claims abstract description 135
- 238000000034 method Methods 0.000 title claims abstract description 86
- 238000012545 processing Methods 0.000 title abstract description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 230000006698 induction Effects 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 238000005259 measurement Methods 0.000 claims description 59
- 230000004044 response Effects 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000003754 machining Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims description 3
- 238000005452 bending Methods 0.000 claims description 2
- 230000035699 permeability Effects 0.000 claims description 2
- 230000000704 physical effect Effects 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 15
- 238000000151 deposition Methods 0.000 description 9
- 239000012467 final product Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000012937 correction Methods 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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Abstract
【解決手段】半導体基板上に種々の半導体材料の層状蒸着を誘導加熱を用いて形成するために、その第1の側上に該半導体基板を載置する基板ホルダーの材料加工方法であって、前記方法は、前記基板ホルダー材料上の少なくとも1つの測定位置における第1の電気抵抗率を求めるステップと、前記第1の電気抵抗率を第2の基準電気抵抗率と比較するステップと、前記比較に対応させて前記基板ホルダー材料を修正するステップと、を備える。
【選択図】図1
Description
Claims (15)
- 半導体基板上に種々の半導体材料の層状蒸着を誘導加熱を用いて形成するために、その第1の側上に該半導体基板を載置する基板ホルダーの材料加工方法であって、
前記基板ホルダー材料上の少なくとも1つの測定位置における第1の電気抵抗率を求めるステップと、
前記第1の電気抵抗率を第2の基準電気抵抗率と比較するステップと、
前記比較に対応させて基板ホルダー材料を適応させるステップと、
を備えることを特徴とする方法。 - 前記第1の電気抵抗率は、前記基板ホルダー材料上の少なくとも2つの測定位置で求めた電気抵抗率値の第1のセットを含み、前記第2の基準電気抵抗率は、前記電気抵抗率値の第1のセットから求められ、前記電気抵抗率値の第1のセットを前記第2の基準電気抵抗率と比較し、この比較に対応させて前記基板ホルダー材料を適応させることを特徴とする請求項1に記載の方法。
- 前記適応された基板ホルダー材料は、基板ホルダー材料のバルク、前記基板ホルダー材料のバルクのスライスおよび基板ホルダーの群の内の1つを含むことを特徴とする請求項1または請求項2に記載の方法。
- 前記第2の基準電気抵抗率は、基板ホルダー材料のバルク、前記基板ホルダー材料のバルクのスライスおよび基板ホルダーの群の内の1つを含む基板ホルダー材料から求められることを特徴とする請求項1乃至請求項3のいずれかに記載の方法。
- 前記第1の電気抵抗率および前記第2の電気抵抗率の内の少なくとも1つは、熱伝導率、ヤング率、曲げ強度、厚み、透磁率、導電率および電気抵抗の群の少なくとも1つを含む前記基板ホルダー材料の物性を測定することによって求められることを特徴とする請求項1乃至請求項4のいずれかに記載の方法。
- 前記基板ホルダーを適応させる前記ステップは、電気抵抗率の前記比較に対応して前記基板ホルダーを機械加工し、前記基板ホルダーの厚みを少なくとも部分的に適応させるステップを備えることを特徴とする請求項1乃至請求項5のいずれかに記載の方法。
- 前記基板ホルダーを適応させる前記ステップに先立ち、前記基板ホルダー材料の少なくとも2〜3箇所の測定位置における電気抵抗率の前記比較に基づく前記基板ホルダー材料の抵抗率プロファイルであって、前記基板ホルダー材料が前記抵抗率プロファイルに対応して修正されることを特徴とする抵抗率プロファイルを生成することを特徴とする請求項1乃至請求項6のいずれかに記載の方法。
- 前記基板ホルダーを適応させる前記ステップに先立ち、前記基板ホルダー材料上に1つの基準点を定義し、前記少なくとも1つの測定位置を前記基準点に対して定義することを特徴とする請求項1乃至請求項7のいずれかに記載の方法。
- 前記基板ホルダーを適応させる前記ステップは、電気抵抗率の前記比較に対応して前記基板ホルダーの多孔率を低減するステップを備えることを特徴とする請求項1乃至請求項8のいずれかに記載の方法。
- 前記基板ホルダーの多孔率を低減するステップは、電気抵抗率の前記比較に対応して硬化性樹脂を注入するステップを備えることを特徴とする請求項9に記載の方法。
- 前記第1の電気抵抗率を求めるステップは、前記基板ホルダー材料上の複数の測定位置で引き続きあるいは同時に測定するステップを備えることを特徴とする請求項1乃至請求項10のいずれかに記載の方法。
- 前記第1の電気抵抗率を求める前記ステップにおいて、基板ホルダー材料中に生成した過電流、特に可変周波数を測定することを特徴とする請求項1乃至請求項11のいずれかに記載の方法。
- 前記過電流は、可変周波数過電流を含むことを特徴とする請求項12に記載の方法。
- 前記求めるステップ、比較するステップおよび適応させるステップは反復ステップであることを特徴とする請求項1乃至請求項13のいずれかに記載の方法。
- 加熱されるタイプのエピタキシャル成長リアクタあるいは有機金属気相成長法(MOCVD)用の基板ホルダーであって、請求項1乃至請求項14のいずれかに記載の方法に準拠して加工されることを特徴とする基板ホルダー。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US201161439648P | 2011-02-04 | 2011-02-04 | |
NL2006146A NL2006146C2 (en) | 2011-02-04 | 2011-02-04 | A method of processing substrate holder material as well as a substrate holder processed by such a method. |
US61/439,648 | 2011-02-04 | ||
NL2006146 | 2011-02-04 |
Publications (2)
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JP2012178557A true JP2012178557A (ja) | 2012-09-13 |
JP5960997B2 JP5960997B2 (ja) | 2016-08-02 |
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JP2012021578A Active JP5960997B2 (ja) | 2011-02-04 | 2012-02-03 | 基板ホルダー材料の加工方法とその方法で加工された基板ホルダー |
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US (1) | US9362157B2 (ja) |
EP (1) | EP2485252B1 (ja) |
JP (1) | JP5960997B2 (ja) |
KR (1) | KR101936957B1 (ja) |
CN (1) | CN102653884B (ja) |
NL (1) | NL2006146C2 (ja) |
PL (1) | PL2485252T3 (ja) |
RU (1) | RU2012103847A (ja) |
SG (1) | SG183617A1 (ja) |
TW (1) | TWI553764B (ja) |
Cited By (1)
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JP2016012679A (ja) * | 2014-06-30 | 2016-01-21 | 豊田合成株式会社 | サセプターとその製造方法 |
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WO2019078036A1 (ja) * | 2017-10-18 | 2019-04-25 | 新日本テクノカーボン株式会社 | サセプター |
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- 2012-02-03 RU RU2012103847/28A patent/RU2012103847A/ru not_active Application Discontinuation
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SG183617A1 (en) | 2012-09-27 |
RU2012103847A (ru) | 2013-08-10 |
PL2485252T3 (pl) | 2016-04-29 |
KR20120090835A (ko) | 2012-08-17 |
EP2485252B1 (en) | 2015-08-26 |
TW201250908A (en) | 2012-12-16 |
CN102653884A (zh) | 2012-09-05 |
US20120199063A1 (en) | 2012-08-09 |
EP2485252A1 (en) | 2012-08-08 |
CN102653884B (zh) | 2017-03-01 |
US9362157B2 (en) | 2016-06-07 |
TWI553764B (zh) | 2016-10-11 |
KR101936957B1 (ko) | 2019-01-09 |
NL2006146C2 (en) | 2012-08-07 |
JP5960997B2 (ja) | 2016-08-02 |
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