PL2485252T3 - Sposób obróbki materiału oprawy podłoża - Google Patents
Sposób obróbki materiału oprawy podłożaInfo
- Publication number
- PL2485252T3 PL2485252T3 PL12153363T PL12153363T PL2485252T3 PL 2485252 T3 PL2485252 T3 PL 2485252T3 PL 12153363 T PL12153363 T PL 12153363T PL 12153363 T PL12153363 T PL 12153363T PL 2485252 T3 PL2485252 T3 PL 2485252T3
- Authority
- PL
- Poland
- Prior art keywords
- processing
- substrate holder
- holder material
- substrate
- holder
- Prior art date
Links
- 239000000463 material Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Measurement Of Resistance Or Impedance (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161439648P | 2011-02-04 | 2011-02-04 | |
NL2006146A NL2006146C2 (en) | 2011-02-04 | 2011-02-04 | A method of processing substrate holder material as well as a substrate holder processed by such a method. |
EP12153363.2A EP2485252B1 (en) | 2011-02-04 | 2012-01-31 | A method of processing a substrate holder material |
Publications (1)
Publication Number | Publication Date |
---|---|
PL2485252T3 true PL2485252T3 (pl) | 2016-04-29 |
Family
ID=45581733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL12153363T PL2485252T3 (pl) | 2011-02-04 | 2012-01-31 | Sposób obróbki materiału oprawy podłoża |
Country Status (10)
Country | Link |
---|---|
US (1) | US9362157B2 (pl) |
EP (1) | EP2485252B1 (pl) |
JP (1) | JP5960997B2 (pl) |
KR (1) | KR101936957B1 (pl) |
CN (1) | CN102653884B (pl) |
NL (1) | NL2006146C2 (pl) |
PL (1) | PL2485252T3 (pl) |
RU (1) | RU2012103847A (pl) |
SG (1) | SG183617A1 (pl) |
TW (1) | TWI553764B (pl) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6233209B2 (ja) * | 2014-06-30 | 2017-11-22 | 豊田合成株式会社 | サセプターとその製造方法 |
WO2019078036A1 (ja) * | 2017-10-18 | 2019-04-25 | 新日本テクノカーボン株式会社 | サセプター |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4047496A (en) | 1974-05-31 | 1977-09-13 | Applied Materials, Inc. | Epitaxial radiation heated reactor |
US3980854A (en) | 1974-11-15 | 1976-09-14 | Rca Corporation | Graphite susceptor structure for inductively heating semiconductor wafers |
TW444266B (en) * | 1998-07-23 | 2001-07-01 | Canon Kk | Semiconductor substrate and method of producing same |
JP2001284259A (ja) * | 2000-03-30 | 2001-10-12 | Matsushita Electric Ind Co Ltd | 半導体ウエハ製造装置におけるウエハ用のホルダ |
JP2002289820A (ja) * | 2001-03-28 | 2002-10-04 | Nippon Steel Corp | Simox基板の製造方法およびsimox基板 |
TW541586B (en) * | 2001-05-25 | 2003-07-11 | Tokyo Electron Ltd | Substrate table, production method therefor and plasma treating device |
US20030016727A1 (en) * | 2001-06-29 | 2003-01-23 | Tokyo Electron Limited | Method of and apparatus for measuring and controlling substrate holder temperature using ultrasonic tomography |
ITMI20020306A1 (it) | 2002-02-15 | 2003-08-18 | Lpe Spa | Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso |
JP4059694B2 (ja) * | 2002-03-27 | 2008-03-12 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
DE10261362B8 (de) * | 2002-12-30 | 2008-08-28 | Osram Opto Semiconductors Gmbh | Substrat-Halter |
IL153894A (en) * | 2003-01-12 | 2010-05-31 | Nova Measuring Instr Ltd | Method and system for measuring the thickness of thin conductive layers |
US7034263B2 (en) * | 2003-07-02 | 2006-04-25 | Itherm Technologies, Lp | Apparatus and method for inductive heating |
JP2007324194A (ja) * | 2006-05-30 | 2007-12-13 | Shin Etsu Handotai Co Ltd | Soiウエーハの評価方法 |
CN101240445A (zh) * | 2007-02-07 | 2008-08-13 | 中国科学院半导体研究所 | 一种碳化硅外延生长用加热器旋转装置 |
US9202736B2 (en) * | 2007-07-31 | 2015-12-01 | Applied Materials, Inc. | Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing |
WO2009041578A1 (ja) * | 2007-09-28 | 2009-04-02 | Bridgestone Corporation | ウェハ支持治具、ウェハ支持治具の温度測定方法、及びウェハ支持治具の温度測定システム |
US7777160B2 (en) * | 2007-12-17 | 2010-08-17 | Momentive Performance Materials Inc. | Electrode tuning method and apparatus for a layered heater structure |
JP5029382B2 (ja) * | 2008-01-22 | 2012-09-19 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
US8291565B2 (en) * | 2008-10-10 | 2012-10-23 | Lam Research Corporation | Method of refurbishing bipolar electrostatic chuck |
JP2010177610A (ja) * | 2009-02-02 | 2010-08-12 | Seiko Epson Corp | 静電チャックの管理方法及びその管理装置 |
JP5446760B2 (ja) * | 2009-11-16 | 2014-03-19 | 株式会社Sumco | エピタキシャル成長方法 |
-
2011
- 2011-02-04 NL NL2006146A patent/NL2006146C2/en not_active IP Right Cessation
-
2012
- 2012-01-31 PL PL12153363T patent/PL2485252T3/pl unknown
- 2012-01-31 EP EP12153363.2A patent/EP2485252B1/en active Active
- 2012-02-02 TW TW101103441A patent/TWI553764B/zh active
- 2012-02-03 KR KR1020120011488A patent/KR101936957B1/ko active IP Right Grant
- 2012-02-03 SG SG2012007985A patent/SG183617A1/en unknown
- 2012-02-03 CN CN201210023874.XA patent/CN102653884B/zh active Active
- 2012-02-03 RU RU2012103847/28A patent/RU2012103847A/ru not_active Application Discontinuation
- 2012-02-03 JP JP2012021578A patent/JP5960997B2/ja active Active
- 2012-02-03 US US13/365,665 patent/US9362157B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
SG183617A1 (en) | 2012-09-27 |
RU2012103847A (ru) | 2013-08-10 |
KR20120090835A (ko) | 2012-08-17 |
EP2485252B1 (en) | 2015-08-26 |
TW201250908A (en) | 2012-12-16 |
CN102653884A (zh) | 2012-09-05 |
US20120199063A1 (en) | 2012-08-09 |
EP2485252A1 (en) | 2012-08-08 |
CN102653884B (zh) | 2017-03-01 |
US9362157B2 (en) | 2016-06-07 |
TWI553764B (zh) | 2016-10-11 |
KR101936957B1 (ko) | 2019-01-09 |
NL2006146C2 (en) | 2012-08-07 |
JP2012178557A (ja) | 2012-09-13 |
JP5960997B2 (ja) | 2016-08-02 |
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