JP5960221B2 - 薄膜光起電性適用向けの透明導電性酸化膜、及びその製造方法 - Google Patents
薄膜光起電性適用向けの透明導電性酸化膜、及びその製造方法 Download PDFInfo
- Publication number
- JP5960221B2 JP5960221B2 JP2014204772A JP2014204772A JP5960221B2 JP 5960221 B2 JP5960221 B2 JP 5960221B2 JP 2014204772 A JP2014204772 A JP 2014204772A JP 2014204772 A JP2014204772 A JP 2014204772A JP 5960221 B2 JP5960221 B2 JP 5960221B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- tco
- thin film
- glass
- oxidizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 116
- 239000010408 film Substances 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 49
- 239000011521 glass Substances 0.000 claims description 86
- 238000000034 method Methods 0.000 claims description 77
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 69
- 230000001590 oxidative effect Effects 0.000 claims description 60
- 239000000126 substance Substances 0.000 claims description 48
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 40
- 239000007789 gas Substances 0.000 claims description 37
- 229910052757 nitrogen Inorganic materials 0.000 claims description 35
- 229910001887 tin oxide Inorganic materials 0.000 claims description 32
- 238000001816 cooling Methods 0.000 claims description 31
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 26
- 229910017604 nitric acid Inorganic materials 0.000 claims description 26
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- 239000012298 atmosphere Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 14
- 229910000077 silane Inorganic materials 0.000 claims description 14
- YMLFYGFCXGNERH-UHFFFAOYSA-K butyltin trichloride Chemical compound CCCC[Sn](Cl)(Cl)Cl YMLFYGFCXGNERH-UHFFFAOYSA-K 0.000 claims description 13
- 230000001965 increasing effect Effects 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 12
- 239000005977 Ethylene Substances 0.000 claims description 12
- 239000001569 carbon dioxide Substances 0.000 claims description 12
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- -1 or carbide Chemical class 0.000 claims description 5
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 claims description 5
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims description 4
- 210000002381 plasma Anatomy 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 229960001730 nitrous oxide Drugs 0.000 claims description 3
- 235000013842 nitrous oxide Nutrition 0.000 claims description 3
- 150000002978 peroxides Chemical class 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000007800 oxidant agent Substances 0.000 claims description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 claims 1
- 229910002651 NO3 Inorganic materials 0.000 claims 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 claims 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims 1
- 239000004327 boric acid Substances 0.000 claims 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 claims 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 239000000523 sample Substances 0.000 description 40
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 26
- 239000000654 additive Substances 0.000 description 25
- 239000007858 starting material Substances 0.000 description 23
- 239000003570 air Substances 0.000 description 20
- 238000002834 transmittance Methods 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 230000000996 additive effect Effects 0.000 description 15
- 230000008021 deposition Effects 0.000 description 15
- 239000012299 nitrogen atmosphere Substances 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 15
- 238000007740 vapor deposition Methods 0.000 description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 13
- 230000006872 improvement Effects 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 239000012159 carrier gas Substances 0.000 description 10
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000005137 deposition process Methods 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 239000011737 fluorine Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910001868 water Inorganic materials 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 238000009501 film coating Methods 0.000 description 7
- 239000002803 fossil fuel Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 6
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 210000004027 cell Anatomy 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000005357 flat glass Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000006060 molten glass Substances 0.000 description 4
- 238000000197 pyrolysis Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000005329 float glass Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000005328 architectural glass Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- PKKGKUDPKRTKLJ-UHFFFAOYSA-L dichloro(dimethyl)stannane Chemical compound C[Sn](C)(Cl)Cl PKKGKUDPKRTKLJ-UHFFFAOYSA-L 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 239000006066 glass batch Substances 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 230000004660 morphological change Effects 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- NPNPZTNLOVBDOC-UHFFFAOYSA-N 1,1-difluoroethane Chemical compound CC(F)F NPNPZTNLOVBDOC-UHFFFAOYSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- KXSLALGXMODRCB-UHFFFAOYSA-N C[Si]([SiH3])(C)C.C[SiH]([SiH2]C)C Chemical compound C[Si]([SiH3])(C)C.C[SiH]([SiH2]C)C KXSLALGXMODRCB-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- AQKTZMCWMZFVFO-UHFFFAOYSA-N chloro(difluoro)methane Chemical compound FC(F)Cl.FC(F)Cl AQKTZMCWMZFVFO-UHFFFAOYSA-N 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- RJGHQTVXGKYATR-UHFFFAOYSA-L dibutyl(dichloro)stannane Chemical compound CCCC[Sn](Cl)(Cl)CCCC RJGHQTVXGKYATR-UHFFFAOYSA-L 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- UTUAUBOPWUPBCH-UHFFFAOYSA-N dimethylsilylidene(dimethyl)silane Chemical compound C[Si](C)=[Si](C)C UTUAUBOPWUPBCH-UHFFFAOYSA-N 0.000 description 1
- SBOSGIJGEHWBKV-UHFFFAOYSA-L dioctyltin(2+);dichloride Chemical compound CCCCCCCC[Sn](Cl)(Cl)CCCCCCCC SBOSGIJGEHWBKV-UHFFFAOYSA-L 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- WSUTUEIGSOWBJO-UHFFFAOYSA-N dizinc oxygen(2-) Chemical compound [O-2].[O-2].[Zn+2].[Zn+2] WSUTUEIGSOWBJO-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- REOJLIXKJWXUGB-UHFFFAOYSA-N mofebutazone Chemical group O=C1C(CCCC)C(=O)NN1C1=CC=CC=C1 REOJLIXKJWXUGB-UHFFFAOYSA-N 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 150000002826 nitrites Chemical class 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- AFCAKJKUYFLYFK-UHFFFAOYSA-N tetrabutyltin Chemical compound CCCC[Sn](CCCC)(CCCC)CCCC AFCAKJKUYFLYFK-UHFFFAOYSA-N 0.000 description 1
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- VIPCDVWYAADTGR-UHFFFAOYSA-N trimethyl(methylsilyl)silane Chemical compound C[SiH2][Si](C)(C)C VIPCDVWYAADTGR-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3423—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings comprising a suboxide
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3435—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3441—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising carbon, a carbide or oxycarbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
- C03C2217/948—Layers comprising indium tin oxide [ITO]
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/324—De-oxidation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metallurgy (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Surface Treatment Of Glass (AREA)
- Chemical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
- Photovoltaic Devices (AREA)
- Non-Insulated Conductors (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Chemically Coating (AREA)
Description
Rs=(V/I)*CF
により特定され、ここでVとは二つの電圧プローブにわたる測定されたDC電圧であり、Iとは二つの電流プローブを通るDC電流である。種々のサイズ及び形の試料のCFの値は、参考図書で通常検索できる。
フロート浴内に配置されている第一塗工機から、シラン(SiH4)、二酸化炭素(CO2)、エチレン(C2H4)、及び窒素(N2−キャリアーガス)を含む混合ガスの流れがガラスリボンの加熱されている表面に向けられる。混合ガスの流れのガスは、下記の比率範囲で供給される出発原料を含む。比率範囲は、下記の通りである。1)シラン(SiH4)13.5gm/min、2)二酸化炭素(CO2)150.0gm/min、3)エチレン(C2H4)6.0gm/min、及び4)窒素(キャリアーガス)38.0gm/min。
フロート浴内に配置されている第一塗工機から、シラン(SiH4)、二酸化炭素(CO2)、エチレン(C2H4)、及び窒素(N2−キャリアーガス)を含む混合ガスの流れがガラスリボンの加熱されている表面に向けられる。混合ガスの流れのガスは、下記の比率の範囲で供給される出発原料を含む。1)シラン(SiH4)13.5gm/min、2)二酸化炭素(CO2)150.0gm/min、3)エチレン(C2H4)5.0gm/min、及び4)窒素(キャリアーガス)38.0gm/min。
フロート浴内に配置されている第一塗工機から、シラン(SiH4)、二酸化炭素(CO2)、エチレン(C2H4)、及び窒素(N2−キャリアーガス)を含む混合ガスの流れがガラスリボンの加熱されている表面に向けられる。混合ガスの流れのガスは、下記の比率範囲で供給される出発原料を含む。1)シラン(SiH4)15.0gm/min、2)二酸化炭素(CO2)200.0gm/min、3)エチレン(C2H4)13.3gm/min、及び4)窒素(キャリアーガス)33.3gm/min。
Claims (23)
- 薄膜デバイスの製造方法であって、前記方法は、
a)基材を設けて、
b)熱分解化学蒸着法により前記基材の少なくとも一部に第一層を付着させて、
c)付着された前記第一層の少なくとも一部を被う透明導電性膜を形成するために熱分解化学蒸着法により前記第一層の少なくとも一部に第二層を付着させて、前記第二層はスズ酸化物を備え、前記第二層は高温、酸化化学物質の蒸気の存在下で混合ガスにより付着され、前記酸化化学物質の蒸気は、前記第二層を付着する前に前記混合ガスと混合され、前記混合ガスは、0.20−2.00kg/min供給され、70%−95%のモノブチル三塩化スズ、及び5%−20%のトリフルオロ酢酸を含み、更に前記酸化化学物質は、純過酸化物、硝酸、硝酸塩、亜硝酸塩、一酸化二窒素、硫酸、硫酸塩、過硫酸塩、次亜塩素酸、塩素酸塩、過塩素酸塩、臭素酸塩、ホウ酸塩、及びそれらの化合物からなる群から選択され、
d)製造後の前記第二層の導電率が少なくとも2%の増加となるように、前記基材、前記第一層、及び前記第二層を非酸化性雰囲気(non-oxidizing atmosphere)又は還元性雰囲気(reducing atmosphere)の一つの下で環境温度まで冷却する方法。 - 前記基材はガラス基材である、請求項1に記載の方法。
- 前記第二層は酸化スズ、インジウム酸化スズ、フッ素添加酸化スズ、又は亜鉛酸化スズ、又はそれらの化合物を備える、請求項1に記載の方法。
- 前記第二層はフッ素添加酸化スズを備える、請求項1に記載の方法。
- 前記第一層はシリコンを備える、請求項1に記載の方法。
- 前記第一層は酸化物、窒化物、又はカーバイド、又はそれらの化合物の状態のシリコンを備える、請求項1に記載の方法。
- 前記第一層はシリコン酸化物(silicon oxide)、二酸化シリコン、窒化シリコン、オキシ窒化シリコン(silicon oxynitride)、炭化シリコン、オキシ炭化シリコン(silicon oxycarbide)、又はそれらの化合物を備える、請求項1に記載の方法。
- 前記第一層はオキシ炭化シリコンを備える、請求項1に記載の方法。
- 前記酸化化学物質は、硝酸、一酸化二窒素、次亜塩素酸、硫酸、及びそれらの化合物から成る群から選択される、請求項1に記載の方法。
- 前記酸化剤は硝酸である、請求項1に記載の方法。
- 前記高温とは200℃から800℃の範囲内の温度である、請求項1に記載の方法。
- 前記高温とは450℃から750℃の範囲内の温度である、請求項1に記載の方法。
- 前記非酸化性雰囲気は、アルコール、C1−C8アルキル、一酸化炭素、水素、窒素、ヘリウム、アルゴン、クリプトン、ネオン、キセノン、真空、還元プラズマ(reducing plasmas)、及びそれらの化合物から成る群から選択される、請求項1に記載の方法。
- 前記非酸化性雰囲気は、窒素、アルゴン、及びそれらの化合物から成る群から選択される、請求項1に記載の方法。
- 前記非酸化性雰囲気は窒素である、請求項1に記載の方法。
- 前記第一層は400Åから1000Åの厚さを有する、請求項1に記載の方法。
- 前記第一層は600Åから900Åの厚さを有する、請求項1に記載の方法。
- 前記第一層は700Åから800Åの厚さを有する、請求項1に記載の方法。
- 前記第二層は300nmから1200nmの厚さを有する、請求項1に記載の方法。
- 前記第二層は500nmから1000nmの厚さを有する、請求項1に記載の方法。
- 前記酸化化学物質は、光透過率を少なくとも約2%増加させる、請求項1に記載の方法。
- 前記第一層の蒸着は、更に2.0−40.0g/minのシラン、50.0−300.0g/minの二酸化炭素、0.0−110.0g/minのエチレン、及び0.0−200.0g/minの窒素を含む、請求項1に記載の方法。
- 前記第二層の蒸着は、更に0.00−5.00kg/minの水蒸気、0.00−2.00kg/minの空気、及び60%−80%の硝酸の水溶液を0.20−1.50kg/min含む、請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US99614407P | 2007-11-02 | 2007-11-02 | |
US60/996,144 | 2007-11-02 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010532067A Division JP2011504293A (ja) | 2007-11-02 | 2008-11-03 | 薄膜光起電性適用向けの透明導電性酸化膜、及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015053494A JP2015053494A (ja) | 2015-03-19 |
JP5960221B2 true JP5960221B2 (ja) | 2016-08-02 |
Family
ID=40279714
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010532067A Pending JP2011504293A (ja) | 2007-11-02 | 2008-11-03 | 薄膜光起電性適用向けの透明導電性酸化膜、及びその製造方法 |
JP2014204772A Expired - Fee Related JP5960221B2 (ja) | 2007-11-02 | 2014-10-03 | 薄膜光起電性適用向けの透明導電性酸化膜、及びその製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010532067A Pending JP2011504293A (ja) | 2007-11-02 | 2008-11-03 | 薄膜光起電性適用向けの透明導電性酸化膜、及びその製造方法 |
Country Status (20)
Country | Link |
---|---|
US (1) | US9181124B2 (ja) |
EP (1) | EP2217542A1 (ja) |
JP (2) | JP2011504293A (ja) |
KR (1) | KR101567615B1 (ja) |
CN (1) | CN101980986B (ja) |
AR (1) | AR069169A1 (ja) |
AU (1) | AU2008319304B2 (ja) |
BR (1) | BRPI0818917A2 (ja) |
CA (1) | CA2704389A1 (ja) |
CL (1) | CL2008003281A1 (ja) |
IL (1) | IL205443A (ja) |
MA (1) | MA31896B1 (ja) |
MX (1) | MX2010004936A (ja) |
MY (1) | MY162545A (ja) |
RU (1) | RU2010122049A (ja) |
SG (1) | SG10201402245VA (ja) |
TN (1) | TN2010000195A1 (ja) |
TW (2) | TWI453173B (ja) |
WO (1) | WO2009058385A1 (ja) |
ZA (1) | ZA201003879B (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010107998A1 (en) * | 2009-03-18 | 2010-09-23 | Agc Flat Glass North America, Inc. | Thin film coating and method of making the same |
DE102009033417C5 (de) | 2009-04-09 | 2022-10-06 | Interpane Entwicklungs-Und Beratungsgesellschaft Mbh | Verfahren und Anlage zur Herstellung eines beschichteten Gegenstands mittels Tempern |
KR101082609B1 (ko) | 2009-10-16 | 2011-11-15 | 엘지이노텍 주식회사 | 터치패널용 면상 부재 및 이의 제조 방법 |
DE102009050234A1 (de) * | 2009-10-21 | 2011-05-05 | Von Ardenne Anlagentechnik Gmbh | Verfahren zur Beschichtung eines Substrats mit einer TCO-Schicht und Dünnschichtsolarzelle |
US20110094577A1 (en) * | 2009-10-28 | 2011-04-28 | Dilip Kumar Chatterjee | Conductive metal oxide films and photovoltaic devices |
FR2956659B1 (fr) * | 2010-02-22 | 2014-10-10 | Saint Gobain | Substrat verrier revetu de couches a tenue mecanique amelioree |
BE1019690A3 (fr) * | 2010-06-24 | 2012-10-02 | Agc Glass Europe | Vitrage isolant. |
CN101887920A (zh) * | 2010-06-25 | 2010-11-17 | 蚌埠玻璃工业设计研究院 | 太阳能电池透明导电膜玻璃及其生产方法 |
US8460765B2 (en) * | 2010-06-29 | 2013-06-11 | Primestar Solar, Inc. | Methods for forming selectively deposited thin films |
US8525019B2 (en) * | 2010-07-01 | 2013-09-03 | Primestar Solar, Inc. | Thin film article and method for forming a reduced conductive area in transparent conductive films for photovoltaic modules |
EP2447999A1 (en) | 2010-10-29 | 2012-05-02 | Applied Materials, Inc. | Method for depositing a thin film electrode and thin film stack |
BE1019881A3 (fr) * | 2011-03-16 | 2013-02-05 | Agc Glass Europe | Vitrage isolant. |
BR112015020142B1 (pt) * | 2013-02-27 | 2020-07-07 | Basell Polyolefine Gmbh | processos para polietileno e composições deste material |
JP6301324B2 (ja) * | 2013-05-23 | 2018-03-28 | リンテック株式会社 | 導電フィルムおよび導電フィルムを有する電子デバイス |
TWI642552B (zh) * | 2014-09-12 | 2018-12-01 | 香港浸會大學 | 經藍寶石薄膜塗覆之可撓基板 |
CN105619963A (zh) * | 2014-10-27 | 2016-06-01 | 河南安彩高科股份有限公司 | 一种低辐射镀膜玻璃 |
US10571248B2 (en) * | 2017-01-09 | 2020-02-25 | Kla-Tencor Corporation | Transparent film error correction pattern in wafer geometry system |
CN109182971B (zh) * | 2018-07-11 | 2020-02-07 | 南开大学 | 一种利用反应等离子沉积技术生长宽光谱mgzo-tco薄膜的方法及应用 |
RU2686790C1 (ru) * | 2018-07-18 | 2019-04-30 | федеральное государственное бюджетное образовательное учреждение высшего образования "Белгородский государственный технологический университет им. В.Г. Шухова" | Способ иризации сортовой посуды из стекла |
GB2582886B (en) * | 2018-10-08 | 2023-03-29 | Pilkington Group Ltd | Process for preparing a coated glass substrate |
CN110981215B (zh) * | 2019-12-23 | 2021-06-22 | 厦门大学 | 一种提高铝掺杂氧化锌导电玻璃热稳定性的方法 |
JP7143919B1 (ja) | 2021-05-07 | 2022-09-29 | Agc株式会社 | 透明導電膜付きガラス基板及びその製造方法 |
US20230112873A1 (en) * | 2021-10-08 | 2023-04-13 | Applied Materials, Inc. | Integrated preclean-deposition system for optical films |
Family Cites Families (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3370205B2 (ja) | 1995-04-04 | 2003-01-27 | 新日本石油株式会社 | 透明導電基板 |
US3655545A (en) * | 1968-02-28 | 1972-04-11 | Ppg Industries Inc | Post heating of sputtered metal oxide films |
US4731256A (en) | 1984-04-10 | 1988-03-15 | M&T Chemicals Inc. | Liquid coating composition for producing high quality, high performance fluorine-doped tin oxide coatings |
JPS63184210A (ja) * | 1987-01-27 | 1988-07-29 | 日本板硝子株式会社 | 透明導電体の製造方法 |
JPH01189815A (ja) * | 1988-01-22 | 1989-07-31 | Toa Nenryo Kogyo Kk | 透明導電膜の作製法 |
FR2633920B1 (fr) | 1988-07-08 | 1992-02-21 | Saint Gobain Vitrage | Procede pour produire une couche transparente a faible resistivite |
JPH07105166B2 (ja) | 1988-09-22 | 1995-11-13 | 旭硝子株式会社 | フッ素ドープ酸化錫膜及びその低抵抗化方法 |
US5101260A (en) | 1989-05-01 | 1992-03-31 | Energy Conversion Devices, Inc. | Multilayer light scattering photovoltaic back reflector and method of making same |
CA2024662A1 (en) | 1989-09-08 | 1991-03-09 | Robert Oswald | Monolithic series and parallel connected photovoltaic module |
US5147688A (en) | 1990-04-24 | 1992-09-15 | Cvd, Inc. | MOCVD of indium oxide and indium/tin oxide films on substrates |
US5487918A (en) | 1990-05-14 | 1996-01-30 | Akhtar; Masud | Method of depositing metal oxides |
US5527596A (en) | 1990-09-27 | 1996-06-18 | Diamonex, Incorporated | Abrasion wear resistant coated substrate product |
EP0500451B1 (fr) | 1991-02-21 | 1999-01-07 | Phototronics Solartechnik GmbH | Dispositif photovoltaique et module solaire à transparence partielle, et procédé de fabrication |
FR2675139B1 (fr) | 1991-04-09 | 1993-11-26 | Saint Gobain Vitrage Internal | Depot de couches pyrolysees a performances ameliorees et vitrage revetu d'une telle couche. |
US5599387A (en) | 1993-02-16 | 1997-02-04 | Ppg Industries, Inc. | Compounds and compositions for coating glass with silicon oxide |
CN1035089C (zh) * | 1993-03-03 | 1997-06-04 | 中国人民解放军国防科学技术大学 | 低电阻率Ag/SnO2电工触头材料及其制备 |
JP2962386B2 (ja) | 1993-03-10 | 1999-10-12 | 本荘ケミカル株式会社 | 透明導電性酸化スズ膜の製造方法 |
JPH0778525A (ja) | 1993-09-07 | 1995-03-20 | Hitachi Ltd | 透明導電膜用材料とそれを用いた透明導電膜の製法 |
JP4079457B2 (ja) * | 1993-12-14 | 2008-04-23 | 日本曹達株式会社 | インジウム−スズ酸化物膜の高抵抗化方法 |
JP3029178B2 (ja) | 1994-04-27 | 2000-04-04 | キヤノン株式会社 | 薄膜半導体太陽電池の製造方法 |
US5530581A (en) * | 1995-05-31 | 1996-06-25 | Eic Laboratories, Inc. | Protective overlayer material and electro-optical coating using same |
US5750265A (en) * | 1996-01-11 | 1998-05-12 | Libbey-Owens-Ford Co. | Coated glass article having a pyrolytic solar control coating |
US5780149A (en) * | 1996-09-13 | 1998-07-14 | Libbey-Ownes-Ford Co. | Glass article having a solar control coating |
FR2759362B1 (fr) | 1997-02-10 | 1999-03-12 | Saint Gobain Vitrage | Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention |
JPH10335684A (ja) | 1997-05-30 | 1998-12-18 | Canon Inc | 光電気変換体の製造方法 |
US6124026A (en) * | 1997-07-07 | 2000-09-26 | Libbey-Owens-Ford Co. | Anti-reflective, reduced visible light transmitting coated glass article |
FR2780054B1 (fr) | 1998-06-19 | 2000-07-21 | Saint Gobain Vitrage | Procede de depot d'une couche a base d'oxyde metallique sur un substrat verrier, substrat verrier ainsi revetu |
US7060320B1 (en) | 1998-07-06 | 2006-06-13 | Nissha Printing Co., Ltd. | Transparent conductive film for transparent touch panel, transparent touch panel using transparent conductive film, and method of manufacturing transparent conductive film |
JP4188392B2 (ja) | 1998-07-06 | 2008-11-26 | 日本写真印刷株式会社 | 透明タッチパネル用透明導電膜の製造方法 |
US6165598A (en) * | 1998-08-14 | 2000-12-26 | Libbey-Owens-Ford Co. | Color suppressed anti-reflective glass |
US6218018B1 (en) | 1998-08-21 | 2001-04-17 | Atofina Chemicals, Inc. | Solar control coated glass |
DE69913635T2 (de) * | 1998-10-09 | 2004-06-09 | Mitsui Chemicals, Inc. | Verfahren zur Herstellung von 1,3-Dialkyl-2-Imidazolinonderivaten |
GB9822338D0 (en) * | 1998-10-13 | 1998-12-09 | Glaverbel | Solar control coated glass |
US6797388B1 (en) | 1999-03-18 | 2004-09-28 | Ppg Industries Ohio, Inc. | Methods of making low haze coatings and the coatings and coated articles made thereby |
US6602606B1 (en) | 1999-05-18 | 2003-08-05 | Nippon Sheet Glass Co., Ltd. | Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same |
JP4485642B2 (ja) | 1999-05-18 | 2010-06-23 | 日本板硝子株式会社 | 透明導電膜付き透明基板の製造方法、およびこれを用いた光電変換装置 |
JP2001060702A (ja) | 1999-06-18 | 2001-03-06 | Nippon Sheet Glass Co Ltd | 光電変換装置用基板およびこれを用いた光電変換装置 |
JP4429418B2 (ja) | 1999-07-19 | 2010-03-10 | 株式会社カネカ | マグネトロンスパッタ装置による金属酸化物薄膜の成膜方法 |
JP2001114533A (ja) | 1999-10-20 | 2001-04-24 | Nippon Sheet Glass Co Ltd | 透明導電膜付きガラス板およびこれを用いたガラス物品 |
FR2800731B1 (fr) * | 1999-11-05 | 2002-01-18 | Saint Gobain Vitrage | Substrat transparent muni d'une couche en derive de silicium |
JP3345638B2 (ja) | 1999-11-11 | 2002-11-18 | 独立行政法人産業技術総合研究所 | 透明導電性膜およびその製造方法 |
JP2001210156A (ja) | 1999-11-17 | 2001-08-03 | Toyo Gosei Kogyo Kk | 透明導電性酸化スズ膜形成用塗布溶液及び透明導電性酸化スズ膜の製造方法並びに透明導電性酸化スズ膜 |
JP2001240430A (ja) | 2000-02-29 | 2001-09-04 | Central Glass Co Ltd | 酸化珪素被膜の形成法 |
US6524647B1 (en) | 2000-03-24 | 2003-02-25 | Pilkington Plc | Method of forming niobium doped tin oxide coatings on glass and coated glass formed thereby |
US6787240B2 (en) | 2000-06-23 | 2004-09-07 | Donnelly Corporation | Enhanced light transmission conductive coated transparent substrate |
US6787692B2 (en) | 2000-10-31 | 2004-09-07 | National Institute Of Advanced Industrial Science & Technology | Solar cell substrate, thin-film solar cell, and multi-junction thin-film solar cell |
JP2002146536A (ja) | 2000-11-08 | 2002-05-22 | Japan Science & Technology Corp | 酸化スズ薄膜の低温形成方法 |
JP4229606B2 (ja) | 2000-11-21 | 2009-02-25 | 日本板硝子株式会社 | 光電変換装置用基体およびそれを備えた光電変換装置 |
US6808008B2 (en) * | 2001-02-20 | 2004-10-26 | Toshiba Kikai Kabushiki Kaisha | Die casting machine |
US6555161B1 (en) * | 2001-05-18 | 2003-04-29 | Ensci Inc. | Process for producing thin film metal oxide coated substrates |
JP2003086025A (ja) | 2001-09-07 | 2003-03-20 | Sanyo Electric Co Ltd | 透明導電膜成膜基板及びその製造方法 |
JP4894115B2 (ja) * | 2001-09-10 | 2012-03-14 | 旭硝子株式会社 | 低抵抗化フッ素ドープ酸化スズ膜の製造方法 |
EP1462540B1 (en) | 2001-12-03 | 2012-03-07 | Nippon Sheet Glass Company, Limited | Method for forming thin film. |
EP1541536A4 (en) * | 2002-07-29 | 2007-04-11 | Asahi Glass Co Ltd | INFRAROTABSCHIRMGLAS |
US6787231B1 (en) | 2003-04-11 | 2004-09-07 | Electroplated Metal Solutions, Inc. | Tin (IV) oxide nanopowder and methods for preparation and use thereof |
JP2005029463A (ja) * | 2003-06-20 | 2005-02-03 | Nippon Sheet Glass Co Ltd | 透明導電膜付きガラス板とその製造方法、およびこのガラス板を用いた光電変換装置 |
WO2005072947A1 (en) | 2004-01-23 | 2005-08-11 | Arkema Inc. | Solar control films composed of metal oxide heterostructures, and method of making same |
US20050181619A1 (en) * | 2004-02-12 | 2005-08-18 | National Taiwan University | Method for forming metal oxide layer by nitric acid oxidation |
GB0411883D0 (en) | 2004-05-28 | 2004-06-30 | Ici Plc | Mixed metal oxides |
US7482060B2 (en) * | 2004-07-14 | 2009-01-27 | Agc Flat Glass North America, Inc. | Silicon oxycarbide coatings having durable hydrophilic properties |
WO2006117345A1 (en) | 2005-04-29 | 2006-11-09 | Agc Flat Glass Europe Sa | Coated substrate and process for the production of a coated substrate |
JP4275121B2 (ja) | 2005-09-05 | 2009-06-10 | 三菱重工業株式会社 | 太陽電池用ガラス基板の製造方法 |
-
2008
- 2008-11-03 MX MX2010004936A patent/MX2010004936A/es active IP Right Grant
- 2008-11-03 AU AU2008319304A patent/AU2008319304B2/en not_active Ceased
- 2008-11-03 CA CA2704389A patent/CA2704389A1/en not_active Abandoned
- 2008-11-03 BR BRPI0818917A patent/BRPI0818917A2/pt not_active IP Right Cessation
- 2008-11-03 CN CN200880123892.7A patent/CN101980986B/zh not_active Expired - Fee Related
- 2008-11-03 SG SG10201402245VA patent/SG10201402245VA/en unknown
- 2008-11-03 TW TW097142396A patent/TWI453173B/zh not_active IP Right Cessation
- 2008-11-03 KR KR1020107012120A patent/KR101567615B1/ko not_active IP Right Cessation
- 2008-11-03 US US12/263,648 patent/US9181124B2/en not_active Expired - Fee Related
- 2008-11-03 MY MYPI2010001965A patent/MY162545A/en unknown
- 2008-11-03 EP EP08844315A patent/EP2217542A1/en not_active Withdrawn
- 2008-11-03 AR ARP080104807A patent/AR069169A1/es not_active Application Discontinuation
- 2008-11-03 RU RU2010122049/03A patent/RU2010122049A/ru unknown
- 2008-11-03 JP JP2010532067A patent/JP2011504293A/ja active Pending
- 2008-11-03 CL CL2008003281A patent/CL2008003281A1/es unknown
- 2008-11-03 TW TW103126649A patent/TWI533334B/zh not_active IP Right Cessation
- 2008-11-03 WO PCT/US2008/012409 patent/WO2009058385A1/en active Application Filing
-
2010
- 2010-04-29 IL IL205443A patent/IL205443A/en not_active IP Right Cessation
- 2010-04-29 TN TN2010000195A patent/TN2010000195A1/fr unknown
- 2010-05-31 ZA ZA2010/03879A patent/ZA201003879B/en unknown
- 2010-06-01 MA MA32885A patent/MA31896B1/fr unknown
-
2014
- 2014-10-03 JP JP2014204772A patent/JP5960221B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
RU2010122049A (ru) | 2011-12-10 |
AU2008319304B2 (en) | 2014-02-06 |
TN2010000195A1 (en) | 2011-11-11 |
IL205443A0 (en) | 2010-12-30 |
KR101567615B1 (ko) | 2015-11-09 |
BRPI0818917A2 (pt) | 2017-05-16 |
AR069169A1 (es) | 2010-01-06 |
JP2011504293A (ja) | 2011-02-03 |
MY162545A (en) | 2017-06-15 |
US9181124B2 (en) | 2015-11-10 |
EP2217542A1 (en) | 2010-08-18 |
MX2010004936A (es) | 2010-12-21 |
WO2009058385A1 (en) | 2009-05-07 |
MA31896B1 (fr) | 2010-12-01 |
AU2008319304A1 (en) | 2009-05-07 |
TW201443929A (zh) | 2014-11-16 |
JP2015053494A (ja) | 2015-03-19 |
CA2704389A1 (en) | 2009-05-07 |
TWI533334B (zh) | 2016-05-11 |
US20090120496A1 (en) | 2009-05-14 |
CL2008003281A1 (es) | 2009-10-16 |
TWI453173B (zh) | 2014-09-21 |
TW200938501A (en) | 2009-09-16 |
CN101980986A (zh) | 2011-02-23 |
SG10201402245VA (en) | 2014-08-28 |
CN101980986B (zh) | 2016-04-27 |
KR20100091208A (ko) | 2010-08-18 |
ZA201003879B (en) | 2011-03-30 |
IL205443A (en) | 2014-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5960221B2 (ja) | 薄膜光起電性適用向けの透明導電性酸化膜、及びその製造方法 | |
US6602606B1 (en) | Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same | |
US6380480B1 (en) | Photoelectric conversion device and substrate for photoelectric conversion device | |
EP1056136B1 (en) | Conductive substrate for a photoelectric conversion device and its manufacturing method | |
JP2002260448A (ja) | 導電膜、その製造方法、それを備えた基板および光電変換装置 | |
JP4233455B2 (ja) | 薄膜形成方法 | |
CN101477846B (zh) | 带有透明导电膜的透明基体及其制造方法、以及含有该基体的光电转换元件 | |
JP4468894B2 (ja) | 透明導電性基板とその製造方法、および光電変換素子 | |
JP4467707B2 (ja) | 導電膜付きガラス板とその製造方法、およびこれを用いた光電変換装置 | |
JP4430193B2 (ja) | 導電膜付きガラス板の製造方法 | |
JP2004362842A (ja) | 透明導電膜付き透明基体、その製造方法、および光電変換素子用基板ならびに光電変換素子 | |
JP3984404B2 (ja) | 導電膜付きガラス板とその製造方法、およびこれを用いた光電変換装置 | |
CN116395981B (zh) | 带有透明导电膜的玻璃基板及其制造方法 | |
JP2001036107A (ja) | 光電変換装置用基板およびこれを用いた光電変換装置 | |
JP2005029463A (ja) | 透明導電膜付きガラス板とその製造方法、およびこのガラス板を用いた光電変換装置 | |
Kuhn et al. | Recent results of the development of a high performance TCO for thin film silicon solar cells | |
JP2005015295A (ja) | 透明導電膜付きガラス板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150630 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150804 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20151104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151201 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160524 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160622 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5960221 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |