JP5935672B2 - スイッチング素子ユニット - Google Patents

スイッチング素子ユニット Download PDF

Info

Publication number
JP5935672B2
JP5935672B2 JP2012263052A JP2012263052A JP5935672B2 JP 5935672 B2 JP5935672 B2 JP 5935672B2 JP 2012263052 A JP2012263052 A JP 2012263052A JP 2012263052 A JP2012263052 A JP 2012263052A JP 5935672 B2 JP5935672 B2 JP 5935672B2
Authority
JP
Japan
Prior art keywords
switching element
arrangement surface
terminal
connection electrode
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012263052A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013179261A (ja
JP2013179261A5 (enExample
Inventor
浩久 戸谷
浩久 戸谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aisin AW Co Ltd
Original Assignee
Aisin AW Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2012263052A priority Critical patent/JP5935672B2/ja
Application filed by Aisin AW Co Ltd filed Critical Aisin AW Co Ltd
Priority to US14/359,486 priority patent/US9177948B2/en
Priority to KR1020147014786A priority patent/KR101691707B1/ko
Priority to CN201380004115.1A priority patent/CN104160501B/zh
Priority to EP13706754.2A priority patent/EP2766930B1/en
Priority to PCT/JP2013/052429 priority patent/WO2013115395A1/en
Publication of JP2013179261A publication Critical patent/JP2013179261A/ja
Publication of JP2013179261A5 publication Critical patent/JP2013179261A5/ja
Application granted granted Critical
Publication of JP5935672B2 publication Critical patent/JP5935672B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/12—Arrangements for reducing harmonics from AC input or output
    • H02M1/126—Arrangements for reducing harmonics from AC input or output using passive filters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73263—Layer and strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inverter Devices (AREA)
  • General Engineering & Computer Science (AREA)
JP2012263052A 2012-01-31 2012-11-30 スイッチング素子ユニット Expired - Fee Related JP5935672B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012263052A JP5935672B2 (ja) 2012-01-31 2012-11-30 スイッチング素子ユニット
KR1020147014786A KR101691707B1 (ko) 2012-01-31 2013-01-29 스위칭소자 유닛
CN201380004115.1A CN104160501B (zh) 2012-01-31 2013-01-29 开关元件单元
EP13706754.2A EP2766930B1 (en) 2012-01-31 2013-01-29 Switching element unit
US14/359,486 US9177948B2 (en) 2012-01-31 2013-01-29 Switching element unit
PCT/JP2013/052429 WO2013115395A1 (en) 2012-01-31 2013-01-29 Switching element unit

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012019132 2012-01-31
JP2012019132 2012-01-31
JP2012263052A JP5935672B2 (ja) 2012-01-31 2012-11-30 スイッチング素子ユニット

Publications (3)

Publication Number Publication Date
JP2013179261A JP2013179261A (ja) 2013-09-09
JP2013179261A5 JP2013179261A5 (enExample) 2014-05-01
JP5935672B2 true JP5935672B2 (ja) 2016-06-15

Family

ID=47754926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012263052A Expired - Fee Related JP5935672B2 (ja) 2012-01-31 2012-11-30 スイッチング素子ユニット

Country Status (6)

Country Link
US (1) US9177948B2 (enExample)
EP (1) EP2766930B1 (enExample)
JP (1) JP5935672B2 (enExample)
KR (1) KR101691707B1 (enExample)
CN (1) CN104160501B (enExample)
WO (1) WO2013115395A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014029944A (ja) * 2012-07-31 2014-02-13 Aisin Aw Co Ltd スイッチング素子ユニット
JP2015060991A (ja) * 2013-09-19 2015-03-30 パナソニックＩｐマネジメント株式会社 半導体装置及びそれを用いた半導体リレー
JP2015191902A (ja) * 2014-03-27 2015-11-02 トヨタ自動車株式会社 半導体モジュール
DE102014111421A1 (de) * 2014-08-11 2016-02-11 Woodward Kempen Gmbh Niederinduktive Schaltungsanordnung eines Umrichters
JP6361447B2 (ja) * 2014-10-15 2018-07-25 住友電気工業株式会社 半導体モジュール
CN107078126B (zh) * 2014-11-06 2020-10-02 三菱电机株式会社 半导体模块以及半导体模块用的导电构件
US9681568B1 (en) * 2015-12-02 2017-06-13 Ge Energy Power Conversion Technology Ltd Compact stacked power modules for minimizing commutating inductance and methods for making the same
DE102018124695A1 (de) * 2017-11-15 2019-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Integrieren von Passivvorrichtungen in Package-Strukturen
WO2022097533A1 (ja) * 2020-11-09 2022-05-12 ローム株式会社 放電回路モジュール
DE102022208266A1 (de) * 2022-08-09 2024-02-15 Magna powertrain gmbh & co kg Leistungsmodul mit flexibler Leiterplatte

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961917A (ja) * 1982-10-01 1984-04-09 松下電器産業株式会社 複合電子部品
US5095402A (en) * 1990-10-02 1992-03-10 Rogers Corporation Internally decoupled integrated circuit package
JPH05152161A (ja) * 1992-02-10 1993-06-18 Tdk Corp 複合部品
JPH08181445A (ja) 1994-12-22 1996-07-12 Sumitomo Metal Ind Ltd セラミックス多層基板
JPH11178353A (ja) 1997-12-11 1999-07-02 Hitachi Ltd 共振形インバータ及びそれを用いた電気車
US6373127B1 (en) * 1998-09-29 2002-04-16 Texas Instruments Incorporated Integrated capacitor on the back of a chip
US6940164B1 (en) * 2000-08-18 2005-09-06 Mitsubishi Denki Kabushiki Kaisha Power module
JP2002176128A (ja) * 2000-12-06 2002-06-21 Toyota Motor Corp マルチチップモジュールの冷却構造
JP3847676B2 (ja) * 2002-07-15 2006-11-22 三菱電機株式会社 パワー半導体装置
US6987670B2 (en) * 2003-05-16 2006-01-17 Ballard Power Systems Corporation Dual power module power system architecture
US7443692B2 (en) * 2003-05-16 2008-10-28 Continental Automotive Systems Us, Inc. Power converter architecture employing at least one capacitor across a DC bus
JP4038455B2 (ja) * 2003-08-21 2008-01-23 三菱電機株式会社 半導体装置
JP2006190972A (ja) 2004-12-08 2006-07-20 Mitsubishi Electric Corp 電力用半導体装置
JP4661645B2 (ja) * 2005-03-23 2011-03-30 トヨタ自動車株式会社 パワー半導体モジュール
JP4651653B2 (ja) * 2007-10-15 2011-03-16 三菱電機株式会社 電力変換装置
US8253241B2 (en) * 2008-05-20 2012-08-28 Infineon Technologies Ag Electronic module

Also Published As

Publication number Publication date
JP2013179261A (ja) 2013-09-09
KR101691707B1 (ko) 2016-12-30
US20140264519A1 (en) 2014-09-18
WO2013115395A1 (en) 2013-08-08
EP2766930A1 (en) 2014-08-20
EP2766930B1 (en) 2018-04-04
KR20140090228A (ko) 2014-07-16
CN104160501B (zh) 2016-11-09
CN104160501A (zh) 2014-11-19
US9177948B2 (en) 2015-11-03

Similar Documents

Publication Publication Date Title
JP5935672B2 (ja) スイッチング素子ユニット
CN107293534B (zh) 电力用半导体模块以及电力变换装置
JP5915350B2 (ja) パワー半導体モジュール
JP6202195B2 (ja) 半導体装置
CN102754327B (zh) 电力变换装置
JP5407198B2 (ja) 電力変換装置のパワーモジュール
JP5336413B2 (ja) パワーモジュール
WO2014021112A1 (ja) スイッチング素子ユニット
JP6053668B2 (ja) 半導体モジュールおよび電力変換装置
JP6121080B1 (ja) 電力変換装置
US20220077021A1 (en) Power electronics system
CN111211114A (zh) 一种快速功率模块及功率模组
JP2015053410A (ja) 半導体モジュール
JP2014072344A (ja) 平滑コンデンサ
CN1917203B (zh) 具有线路元件的功率半导体模块
JP2005191233A (ja) パワーモジュール
CN112910287B (zh) 功率用半导体装置
CN110506384A (zh) 低电感半桥功率模块
JP2024015805A (ja) スイッチングデバイスおよびスイッチングモジュール
US12388375B2 (en) Switching module including heat radiation member and inverter including the same
CN115483174A (zh) 半导体模块
KR20220129076A (ko) 알루미늄 스너버 커패시터가 통합된 전력 모듈
HK1142179B (en) Power conversion device
HK1142179A1 (en) Power conversion device

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140313

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140313

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150818

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151006

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160412

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160425

R150 Certificate of patent or registration of utility model

Ref document number: 5935672

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees