JP5935274B2 - 固体撮像装置、固体撮像装置の制御方法および固体撮像装置の制御プログラム - Google Patents

固体撮像装置、固体撮像装置の制御方法および固体撮像装置の制御プログラム Download PDF

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JP5935274B2
JP5935274B2 JP2011207368A JP2011207368A JP5935274B2 JP 5935274 B2 JP5935274 B2 JP 5935274B2 JP 2011207368 A JP2011207368 A JP 2011207368A JP 2011207368 A JP2011207368 A JP 2011207368A JP 5935274 B2 JP5935274 B2 JP 5935274B2
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JP2013070240A5 (enExample
JP2013070240A (ja
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川口　隆
隆 川口
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Sony Corp
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Sony Corp
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Priority to JP2011207368A priority Critical patent/JP5935274B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Priority to US13/598,986 priority patent/US9094623B2/en
Priority to CN201210352684.2A priority patent/CN103024297B/zh
Priority to CN201710127423.3A priority patent/CN107135357B/zh
Publication of JP2013070240A publication Critical patent/JP2013070240A/ja
Publication of JP2013070240A5 publication Critical patent/JP2013070240A5/ja
Priority to US14/622,681 priority patent/US9692994B2/en
Application granted granted Critical
Publication of JP5935274B2 publication Critical patent/JP5935274B2/ja
Priority to US15/298,574 priority patent/US9609240B2/en
Priority to US15/397,631 priority patent/US9854183B2/en
Priority to US15/490,590 priority patent/US9813653B2/en
Priority to US15/689,921 priority patent/US10523887B2/en
Priority to US15/701,632 priority patent/US10674105B2/en
Priority to US16/856,438 priority patent/US11076119B2/en
Priority to US16/856,419 priority patent/US11082655B2/en
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2011207368A 2011-09-22 2011-09-22 固体撮像装置、固体撮像装置の制御方法および固体撮像装置の制御プログラム Active JP5935274B2 (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP2011207368A JP5935274B2 (ja) 2011-09-22 2011-09-22 固体撮像装置、固体撮像装置の制御方法および固体撮像装置の制御プログラム
US13/598,986 US9094623B2 (en) 2011-09-22 2012-08-30 Solid state imaging device, method of controlling solid state imaging device, and program for controlling solid state imaging device
CN201210352684.2A CN103024297B (zh) 2011-09-22 2012-09-20 固态成像设备以及控制固态成像设备的方法
CN201710127423.3A CN107135357B (zh) 2011-09-22 2012-09-20 固态成像设备，控制固态成像设备的方法
US14/622,681 US9692994B2 (en) 2011-09-22 2015-02-13 Solid state imaging device, method of controlling solid state imaging device, and program for controlling solid state imaging device
US15/298,574 US9609240B2 (en) 2011-09-22 2016-10-20 Solid state imaging device, method of controlling solid state imaging device, and program for controlling solid state imaging device
US15/397,631 US9854183B2 (en) 2011-09-22 2017-01-03 Solid state imaging device, method of controlling solid state imaging device, and program for controlling solid state imaging device
US15/490,590 US9813653B2 (en) 2011-09-22 2017-04-18 Solid state imaging device, method of controlling solid state imaging device, and program for controlling solid state imaging device
US15/689,921 US10523887B2 (en) 2011-09-22 2017-08-29 Solid state imaging device, method of controlling solid state imaging device, and program for controlling solid state imaging device
US15/701,632 US10674105B2 (en) 2011-09-22 2017-09-12 Solid state imaging device, method of controlling solid state imaging device, and program for controlling solid state imaging device
US16/856,438 US11076119B2 (en) 2011-09-22 2020-04-23 Solid state imaging device, method of controlling solid state imaging device, and program for controlling solid state imaging device
US16/856,419 US11082655B2 (en) 2011-09-22 2020-04-23 Solid state imaging device, method of controlling solid state imaging device, and program for controlling solid state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011207368A JP5935274B2 (ja) 2011-09-22 2011-09-22 固体撮像装置、固体撮像装置の制御方法および固体撮像装置の制御プログラム

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JP2016093574A Division JP6135797B2 (ja) 2016-05-09 2016-05-09 固体撮像装置

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JP2013070240A JP2013070240A (ja) 2013-04-18
JP2013070240A5 JP2013070240A5 (enExample) 2014-10-23
JP5935274B2 true JP5935274B2 (ja) 2016-06-15

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US (9) US9094623B2 (enExample)
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TWI634791B (zh) 2013-02-27 2018-09-01 新力股份有限公司 Solid-state imaging device, driving method, and electronic device
JP6333523B2 (ja) * 2013-06-12 2018-05-30 ソニーセミコンダクタソリューションズ株式会社 表示装置
JP6561315B2 (ja) 2014-01-21 2019-08-21 パナソニックＩｐマネジメント株式会社 固体撮像装置

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