JP5909276B2 - 最初のチャージだけをドーピングすることによる、均一にドーピングされたシリコンインゴットの成長 - Google Patents

最初のチャージだけをドーピングすることによる、均一にドーピングされたシリコンインゴットの成長 Download PDF

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JP5909276B2
JP5909276B2 JP2014509471A JP2014509471A JP5909276B2 JP 5909276 B2 JP5909276 B2 JP 5909276B2 JP 2014509471 A JP2014509471 A JP 2014509471A JP 2014509471 A JP2014509471 A JP 2014509471A JP 5909276 B2 JP5909276 B2 JP 5909276B2
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silicon
zone
crucible
ingot
melt
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JP2014513034A (ja
JP2014513034A5 (enExample
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バヤード ケイ． ジョンソン，
バヤード ケイ． ジョンソン，
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Gtat Ip Holding LLC
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Gtat Ip Holding LLC
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP2014509471A 2011-05-06 2012-05-04 最初のチャージだけをドーピングすることによる、均一にドーピングされたシリコンインゴットの成長 Active JP5909276B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161483140P 2011-05-06 2011-05-06
US61/483,140 2011-05-06
PCT/US2012/036497 WO2012154551A2 (en) 2011-05-06 2012-05-04 Growth of a uniformly doped silicon ingot by doping only the initial charge

Publications (3)

Publication Number Publication Date
JP2014513034A JP2014513034A (ja) 2014-05-29
JP2014513034A5 JP2014513034A5 (enExample) 2015-05-21
JP5909276B2 true JP5909276B2 (ja) 2016-04-26

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ID=47089362

Family Applications (1)

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JP2014509471A Active JP5909276B2 (ja) 2011-05-06 2012-05-04 最初のチャージだけをドーピングすることによる、均一にドーピングされたシリコンインゴットの成長

Country Status (9)

Country Link
US (1) US10544517B2 (enExample)
EP (1) EP2705178B1 (enExample)
JP (1) JP5909276B2 (enExample)
KR (1) KR101939594B1 (enExample)
CN (1) CN103635613B (enExample)
MY (1) MY169752A (enExample)
PH (1) PH12013502255A1 (enExample)
TW (1) TWI588303B (enExample)
WO (1) WO2012154551A2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013203740B4 (de) * 2013-03-05 2020-06-18 Solarworld Industries Gmbh Vorrichtung und Vefahren zur Herstellung von Silizium-Blöcken
FR3010721B1 (fr) * 2013-09-17 2017-02-24 Commissariat Energie Atomique Procede de fabrication d'un lingot de silicium presentant une concentration homogene en phosphore
JP6056772B2 (ja) 2014-01-07 2017-01-11 株式会社Sumco エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
KR20150106204A (ko) 2014-03-11 2015-09-21 (주)기술과가치 잉곳 제조 장치
KR20150107540A (ko) 2014-03-14 2015-09-23 (주)기술과가치 잉곳 제조 장치
JP6471492B2 (ja) * 2014-12-24 2019-02-20 株式会社Sumco 単結晶の製造方法
US20180291524A1 (en) * 2015-05-01 2018-10-11 Corner Star Limited Methods for producing single crystal ingots doped with volatile dopants
CN108138354B (zh) * 2015-05-01 2021-05-28 各星有限公司 生产被挥发性掺杂剂掺杂的单晶锭的方法
CN105755532A (zh) * 2016-04-13 2016-07-13 江西赛维Ldk太阳能高科技有限公司 一种晶体硅的制备方法及晶体硅
CN105951173A (zh) * 2016-05-30 2016-09-21 上海超硅半导体有限公司 N型单晶硅晶锭及其制造方法
US20180087179A1 (en) * 2016-09-28 2018-03-29 Corner Star Limited Single crystal silicon ingots having doped axial regions with different resistivity and methods for producing such ingots
WO2018198606A1 (ja) * 2017-04-25 2018-11-01 株式会社Sumco ｎ型シリコン単結晶の製造方法、ｎ型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ
JP7080017B2 (ja) * 2017-04-25 2022-06-03 株式会社Sumco ｎ型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ
CN110158148A (zh) * 2019-04-29 2019-08-23 江苏协鑫软控设备科技发展有限公司 晶硅及其晶体生长工艺
US11585010B2 (en) 2019-06-28 2023-02-21 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant
CN116615580A (zh) * 2020-11-11 2023-08-18 环球晶圆股份有限公司 具有减量坩埚腐蚀的单晶硅锭的形成方法
US11742451B2 (en) * 2020-11-24 2023-08-29 Cisco Technology, Inc. Integrate stressor with Ge photodiode using a substrate removal process
CN113862778A (zh) * 2021-09-30 2021-12-31 西安奕斯伟材料科技有限公司 坩埚组件、拉晶炉及拉制单晶硅棒的方法
KR102516630B1 (ko) * 2021-10-18 2023-03-30 한화솔루션 주식회사 잉곳 성장 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6379790A (ja) 1986-09-22 1988-04-09 Toshiba Corp 結晶引上げ装置
JPS6395195A (ja) * 1986-10-08 1988-04-26 Toshiba Corp 結晶引上げ方法及び装置
JP2755588B2 (ja) * 1988-02-22 1998-05-20 株式会社東芝 結晶引上げ方法
JPH085740B2 (ja) * 1988-02-25 1996-01-24 株式会社東芝 半導体の結晶引上げ方法
JPH0392774U (enExample) * 1989-12-28 1991-09-20
US5427056A (en) 1990-10-17 1995-06-27 Komatsu Electronic Metals Co., Ltd. Apparatus and method for producing single crystal
JP3484870B2 (ja) 1996-03-27 2004-01-06 信越半導体株式会社 連続チャージ法によるシリコン単結晶の製造方法およびドーパント供給装置
JP2006315869A (ja) * 2005-05-10 2006-11-24 Sumco Corp 窒素ドープシリコン単結晶の製造方法

Also Published As

Publication number Publication date
MY169752A (en) 2019-05-15
KR101939594B1 (ko) 2019-01-17
EP2705178B1 (en) 2016-07-06
CN103635613B (zh) 2017-02-15
US20120279437A1 (en) 2012-11-08
EP2705178A2 (en) 2014-03-12
TWI588303B (zh) 2017-06-21
US10544517B2 (en) 2020-01-28
PH12013502255A1 (en) 2014-01-13
WO2012154551A3 (en) 2013-03-21
EP2705178A4 (en) 2015-04-15
JP2014513034A (ja) 2014-05-29
KR20140096993A (ko) 2014-08-06
WO2012154551A2 (en) 2012-11-15
CN103635613A (zh) 2014-03-12
TW201303092A (zh) 2013-01-16

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