TWI588303B - 藉由僅摻雜初始裝料而生長均勻摻雜矽錠 - Google Patents
藉由僅摻雜初始裝料而生長均勻摻雜矽錠 Download PDFInfo
- Publication number
- TWI588303B TWI588303B TW101116159A TW101116159A TWI588303B TW I588303 B TWI588303 B TW I588303B TW 101116159 A TW101116159 A TW 101116159A TW 101116159 A TW101116159 A TW 101116159A TW I588303 B TWI588303 B TW I588303B
- Authority
- TW
- Taiwan
- Prior art keywords
- crucible
- zone
- dopant material
- growth
- ingot
- Prior art date
Links
- 229910052797 bismuth Inorganic materials 0.000 title claims description 17
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims description 17
- 239000002019 doping agent Substances 0.000 claims description 132
- 239000000463 material Substances 0.000 claims description 85
- 238000000034 method Methods 0.000 claims description 77
- 239000013078 crystal Substances 0.000 claims description 56
- 238000005204 segregation Methods 0.000 claims description 25
- 230000008018 melting Effects 0.000 claims description 22
- 238000002844 melting Methods 0.000 claims description 22
- 239000000155 melt Substances 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 21
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 20
- 239000012530 fluid Substances 0.000 claims description 20
- 229910052707 ruthenium Inorganic materials 0.000 claims description 20
- 238000004891 communication Methods 0.000 claims description 17
- 229910052715 tantalum Inorganic materials 0.000 claims description 16
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 11
- 229910052796 boron Inorganic materials 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 230000008569 process Effects 0.000 description 19
- 239000007787 solid Substances 0.000 description 11
- 238000002955 isolation Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 239000002178 crystalline material Substances 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000007937 lozenge Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161483140P | 2011-05-06 | 2011-05-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201303092A TW201303092A (zh) | 2013-01-16 |
| TWI588303B true TWI588303B (zh) | 2017-06-21 |
Family
ID=47089362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101116159A TWI588303B (zh) | 2011-05-06 | 2012-05-07 | 藉由僅摻雜初始裝料而生長均勻摻雜矽錠 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10544517B2 (enExample) |
| EP (1) | EP2705178B1 (enExample) |
| JP (1) | JP5909276B2 (enExample) |
| KR (1) | KR101939594B1 (enExample) |
| CN (1) | CN103635613B (enExample) |
| MY (1) | MY169752A (enExample) |
| PH (1) | PH12013502255A1 (enExample) |
| TW (1) | TWI588303B (enExample) |
| WO (1) | WO2012154551A2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013203740B4 (de) * | 2013-03-05 | 2020-06-18 | Solarworld Industries Gmbh | Vorrichtung und Vefahren zur Herstellung von Silizium-Blöcken |
| FR3010721B1 (fr) * | 2013-09-17 | 2017-02-24 | Commissariat Energie Atomique | Procede de fabrication d'un lingot de silicium presentant une concentration homogene en phosphore |
| JP6056772B2 (ja) | 2014-01-07 | 2017-01-11 | 株式会社Sumco | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
| KR20150106204A (ko) | 2014-03-11 | 2015-09-21 | (주)기술과가치 | 잉곳 제조 장치 |
| KR20150107540A (ko) | 2014-03-14 | 2015-09-23 | (주)기술과가치 | 잉곳 제조 장치 |
| JP6471492B2 (ja) * | 2014-12-24 | 2019-02-20 | 株式会社Sumco | 単結晶の製造方法 |
| US20180291524A1 (en) * | 2015-05-01 | 2018-10-11 | Corner Star Limited | Methods for producing single crystal ingots doped with volatile dopants |
| CN108138354B (zh) * | 2015-05-01 | 2021-05-28 | 各星有限公司 | 生产被挥发性掺杂剂掺杂的单晶锭的方法 |
| CN105755532A (zh) * | 2016-04-13 | 2016-07-13 | 江西赛维Ldk太阳能高科技有限公司 | 一种晶体硅的制备方法及晶体硅 |
| CN105951173A (zh) * | 2016-05-30 | 2016-09-21 | 上海超硅半导体有限公司 | N型单晶硅晶锭及其制造方法 |
| US20180087179A1 (en) * | 2016-09-28 | 2018-03-29 | Corner Star Limited | Single crystal silicon ingots having doped axial regions with different resistivity and methods for producing such ingots |
| WO2018198606A1 (ja) * | 2017-04-25 | 2018-11-01 | 株式会社Sumco | ｎ型シリコン単結晶の製造方法、ｎ型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ |
| JP7080017B2 (ja) * | 2017-04-25 | 2022-06-03 | 株式会社Sumco | ｎ型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ |
| CN110158148A (zh) * | 2019-04-29 | 2019-08-23 | 江苏协鑫软控设备科技发展有限公司 | 晶硅及其晶体生长工艺 |
| US11585010B2 (en) | 2019-06-28 | 2023-02-21 | Globalwafers Co., Ltd. | Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant |
| CN116615580A (zh) * | 2020-11-11 | 2023-08-18 | 环球晶圆股份有限公司 | 具有减量坩埚腐蚀的单晶硅锭的形成方法 |
| US11742451B2 (en) * | 2020-11-24 | 2023-08-29 | Cisco Technology, Inc. | Integrate stressor with Ge photodiode using a substrate removal process |
| CN113862778A (zh) * | 2021-09-30 | 2021-12-31 | 西安奕斯伟材料科技有限公司 | 坩埚组件、拉晶炉及拉制单晶硅棒的方法 |
| KR102516630B1 (ko) * | 2021-10-18 | 2023-03-30 | 한화솔루션 주식회사 | 잉곳 성장 장치 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5021225A (en) * | 1988-02-22 | 1991-06-04 | Kabushiki Kaisha Toshiba | Crystal pulling apparatus and crystal pulling method using the same |
| US20060254499A1 (en) * | 2005-05-10 | 2006-11-16 | Jun Furukawa | Method For Manufacturing Nitrogen-Doped Silicon Single Crystal |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6379790A (ja) | 1986-09-22 | 1988-04-09 | Toshiba Corp | 結晶引上げ装置 |
| JPS6395195A (ja) * | 1986-10-08 | 1988-04-26 | Toshiba Corp | 結晶引上げ方法及び装置 |
| JPH085740B2 (ja) * | 1988-02-25 | 1996-01-24 | 株式会社東芝 | 半導体の結晶引上げ方法 |
| JPH0392774U (enExample) * | 1989-12-28 | 1991-09-20 | ||
| US5427056A (en) | 1990-10-17 | 1995-06-27 | Komatsu Electronic Metals Co., Ltd. | Apparatus and method for producing single crystal |
| JP3484870B2 (ja) | 1996-03-27 | 2004-01-06 | 信越半導体株式会社 | 連続チャージ法によるシリコン単結晶の製造方法およびドーパント供給装置 |
-
2012
- 2012-05-04 JP JP2014509471A patent/JP5909276B2/ja active Active
- 2012-05-04 KR KR1020137032404A patent/KR101939594B1/ko active Active
- 2012-05-04 WO PCT/US2012/036497 patent/WO2012154551A2/en not_active Ceased
- 2012-05-04 EP EP12781614.8A patent/EP2705178B1/en active Active
- 2012-05-04 MY MYPI2013004019A patent/MY169752A/en unknown
- 2012-05-04 CN CN201280030859.6A patent/CN103635613B/zh active Active
- 2012-05-04 US US13/464,203 patent/US10544517B2/en active Active
- 2012-05-04 PH PH1/2013/502255A patent/PH12013502255A1/en unknown
- 2012-05-07 TW TW101116159A patent/TWI588303B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5021225A (en) * | 1988-02-22 | 1991-06-04 | Kabushiki Kaisha Toshiba | Crystal pulling apparatus and crystal pulling method using the same |
| US20060254499A1 (en) * | 2005-05-10 | 2006-11-16 | Jun Furukawa | Method For Manufacturing Nitrogen-Doped Silicon Single Crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| MY169752A (en) | 2019-05-15 |
| KR101939594B1 (ko) | 2019-01-17 |
| EP2705178B1 (en) | 2016-07-06 |
| CN103635613B (zh) | 2017-02-15 |
| US20120279437A1 (en) | 2012-11-08 |
| EP2705178A2 (en) | 2014-03-12 |
| US10544517B2 (en) | 2020-01-28 |
| PH12013502255A1 (en) | 2014-01-13 |
| JP5909276B2 (ja) | 2016-04-26 |
| WO2012154551A3 (en) | 2013-03-21 |
| EP2705178A4 (en) | 2015-04-15 |
| JP2014513034A (ja) | 2014-05-29 |
| KR20140096993A (ko) | 2014-08-06 |
| WO2012154551A2 (en) | 2012-11-15 |
| CN103635613A (zh) | 2014-03-12 |
| TW201303092A (zh) | 2013-01-16 |
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