CN103635613B - 通过仅掺杂初始装料而生长均匀掺杂硅锭 - Google Patents

通过仅掺杂初始装料而生长均匀掺杂硅锭 Download PDF

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Publication number
CN103635613B
CN103635613B CN201280030859.6A CN201280030859A CN103635613B CN 103635613 B CN103635613 B CN 103635613B CN 201280030859 A CN201280030859 A CN 201280030859A CN 103635613 B CN103635613 B CN 103635613B
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China
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silicon
growth
zone
crucible
ingot
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CN201280030859.6A
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Chinese (zh)
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CN103635613A (zh
Inventor
B·K·约翰逊
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Gtat Ip Holdings Co Ltd
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GT Advanced CZ LLC
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CN201280030859.6A 2011-05-06 2012-05-04 通过仅掺杂初始装料而生长均匀掺杂硅锭 Active CN103635613B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161483140P 2011-05-06 2011-05-06
US61/483,140 2011-05-06
PCT/US2012/036497 WO2012154551A2 (en) 2011-05-06 2012-05-04 Growth of a uniformly doped silicon ingot by doping only the initial charge

Publications (2)

Publication Number Publication Date
CN103635613A CN103635613A (zh) 2014-03-12
CN103635613B true CN103635613B (zh) 2017-02-15

Family

ID=47089362

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CN201280030859.6A Active CN103635613B (zh) 2011-05-06 2012-05-04 通过仅掺杂初始装料而生长均匀掺杂硅锭

Country Status (9)

Country Link
US (1) US10544517B2 (enExample)
EP (1) EP2705178B1 (enExample)
JP (1) JP5909276B2 (enExample)
KR (1) KR101939594B1 (enExample)
CN (1) CN103635613B (enExample)
MY (1) MY169752A (enExample)
PH (1) PH12013502255A1 (enExample)
TW (1) TWI588303B (enExample)
WO (1) WO2012154551A2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013203740B4 (de) * 2013-03-05 2020-06-18 Solarworld Industries Gmbh Vorrichtung und Vefahren zur Herstellung von Silizium-Blöcken
FR3010721B1 (fr) * 2013-09-17 2017-02-24 Commissariat Energie Atomique Procede de fabrication d'un lingot de silicium presentant une concentration homogene en phosphore
JP6056772B2 (ja) 2014-01-07 2017-01-11 株式会社Sumco エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
KR20150106204A (ko) 2014-03-11 2015-09-21 (주)기술과가치 잉곳 제조 장치
KR20150107540A (ko) 2014-03-14 2015-09-23 (주)기술과가치 잉곳 제조 장치
JP6471492B2 (ja) * 2014-12-24 2019-02-20 株式会社Sumco 単結晶の製造方法
US20180291524A1 (en) * 2015-05-01 2018-10-11 Corner Star Limited Methods for producing single crystal ingots doped with volatile dopants
CN108138354B (zh) * 2015-05-01 2021-05-28 各星有限公司 生产被挥发性掺杂剂掺杂的单晶锭的方法
CN105755532A (zh) * 2016-04-13 2016-07-13 江西赛维Ldk太阳能高科技有限公司 一种晶体硅的制备方法及晶体硅
CN105951173A (zh) * 2016-05-30 2016-09-21 上海超硅半导体有限公司 N型单晶硅晶锭及其制造方法
US20180087179A1 (en) * 2016-09-28 2018-03-29 Corner Star Limited Single crystal silicon ingots having doped axial regions with different resistivity and methods for producing such ingots
WO2018198606A1 (ja) * 2017-04-25 2018-11-01 株式会社Sumco ｎ型シリコン単結晶の製造方法、ｎ型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ
JP7080017B2 (ja) * 2017-04-25 2022-06-03 株式会社Sumco ｎ型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ
CN110158148A (zh) * 2019-04-29 2019-08-23 江苏协鑫软控设备科技发展有限公司 晶硅及其晶体生长工艺
US11585010B2 (en) 2019-06-28 2023-02-21 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant
CN116615580A (zh) * 2020-11-11 2023-08-18 环球晶圆股份有限公司 具有减量坩埚腐蚀的单晶硅锭的形成方法
US11742451B2 (en) * 2020-11-24 2023-08-29 Cisco Technology, Inc. Integrate stressor with Ge photodiode using a substrate removal process
CN113862778A (zh) * 2021-09-30 2021-12-31 西安奕斯伟材料科技有限公司 坩埚组件、拉晶炉及拉制单晶硅棒的方法
KR102516630B1 (ko) * 2021-10-18 2023-03-30 한화솔루션 주식회사 잉곳 성장 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021225A (en) * 1988-02-22 1991-06-04 Kabushiki Kaisha Toshiba Crystal pulling apparatus and crystal pulling method using the same
US5073229A (en) * 1988-02-25 1991-12-17 Kabushiki Kaisha Toshiba Semiconductor crystal pulling method
EP1722014A1 (en) * 2005-05-10 2006-11-15 Sumco Corporation Method for manufacturing nitrogen-doped silicon single crystal

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6379790A (ja) 1986-09-22 1988-04-09 Toshiba Corp 結晶引上げ装置
JPS6395195A (ja) * 1986-10-08 1988-04-26 Toshiba Corp 結晶引上げ方法及び装置
JPH0392774U (enExample) * 1989-12-28 1991-09-20
US5427056A (en) 1990-10-17 1995-06-27 Komatsu Electronic Metals Co., Ltd. Apparatus and method for producing single crystal
JP3484870B2 (ja) 1996-03-27 2004-01-06 信越半導体株式会社 連続チャージ法によるシリコン単結晶の製造方法およびドーパント供給装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021225A (en) * 1988-02-22 1991-06-04 Kabushiki Kaisha Toshiba Crystal pulling apparatus and crystal pulling method using the same
US5073229A (en) * 1988-02-25 1991-12-17 Kabushiki Kaisha Toshiba Semiconductor crystal pulling method
EP1722014A1 (en) * 2005-05-10 2006-11-15 Sumco Corporation Method for manufacturing nitrogen-doped silicon single crystal

Also Published As

Publication number Publication date
MY169752A (en) 2019-05-15
KR101939594B1 (ko) 2019-01-17
EP2705178B1 (en) 2016-07-06
US20120279437A1 (en) 2012-11-08
EP2705178A2 (en) 2014-03-12
TWI588303B (zh) 2017-06-21
US10544517B2 (en) 2020-01-28
PH12013502255A1 (en) 2014-01-13
JP5909276B2 (ja) 2016-04-26
WO2012154551A3 (en) 2013-03-21
EP2705178A4 (en) 2015-04-15
JP2014513034A (ja) 2014-05-29
KR20140096993A (ko) 2014-08-06
WO2012154551A2 (en) 2012-11-15
CN103635613A (zh) 2014-03-12
TW201303092A (zh) 2013-01-16

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