PH12013502255A1 - Growth of a uniformly doped silicon ingot by doping only the initial charge - Google Patents
Growth of a uniformly doped silicon ingot by doping only the initial chargeInfo
- Publication number
- PH12013502255A1 PH12013502255A1 PH1/2013/502255A PH12013502255A PH12013502255A1 PH 12013502255 A1 PH12013502255 A1 PH 12013502255A1 PH 12013502255 A PH12013502255 A PH 12013502255A PH 12013502255 A1 PH12013502255 A1 PH 12013502255A1
- Authority
- PH
- Philippines
- Prior art keywords
- silicon ingot
- growth
- doped silicon
- uniformly doped
- doping
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 239000002019 doping agent Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000012530 fluid Substances 0.000 abstract 1
- 238000005204 segregation Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161483140P | 2011-05-06 | 2011-05-06 | |
| PCT/US2012/036497 WO2012154551A2 (en) | 2011-05-06 | 2012-05-04 | Growth of a uniformly doped silicon ingot by doping only the initial charge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PH12013502255A1 true PH12013502255A1 (en) | 2014-01-13 |
Family
ID=47089362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PH1/2013/502255A PH12013502255A1 (en) | 2011-05-06 | 2012-05-04 | Growth of a uniformly doped silicon ingot by doping only the initial charge |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10544517B2 (enExample) |
| EP (1) | EP2705178B1 (enExample) |
| JP (1) | JP5909276B2 (enExample) |
| KR (1) | KR101939594B1 (enExample) |
| CN (1) | CN103635613B (enExample) |
| MY (1) | MY169752A (enExample) |
| PH (1) | PH12013502255A1 (enExample) |
| TW (1) | TWI588303B (enExample) |
| WO (1) | WO2012154551A2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013203740B4 (de) * | 2013-03-05 | 2020-06-18 | Solarworld Industries Gmbh | Vorrichtung und Vefahren zur Herstellung von Silizium-Blöcken |
| FR3010721B1 (fr) | 2013-09-17 | 2017-02-24 | Commissariat Energie Atomique | Procede de fabrication d'un lingot de silicium presentant une concentration homogene en phosphore |
| JP6056772B2 (ja) | 2014-01-07 | 2017-01-11 | 株式会社Sumco | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
| KR20150106204A (ko) | 2014-03-11 | 2015-09-21 | (주)기술과가치 | 잉곳 제조 장치 |
| KR20150107540A (ko) | 2014-03-14 | 2015-09-23 | (주)기술과가치 | 잉곳 제조 장치 |
| JP6471492B2 (ja) | 2014-12-24 | 2019-02-20 | 株式会社Sumco | 単結晶の製造方法 |
| CN108138354B (zh) * | 2015-05-01 | 2021-05-28 | 各星有限公司 | 生产被挥发性掺杂剂掺杂的单晶锭的方法 |
| US20180291524A1 (en) * | 2015-05-01 | 2018-10-11 | Corner Star Limited | Methods for producing single crystal ingots doped with volatile dopants |
| CN105755532A (zh) * | 2016-04-13 | 2016-07-13 | 江西赛维Ldk太阳能高科技有限公司 | 一种晶体硅的制备方法及晶体硅 |
| CN105951173A (zh) * | 2016-05-30 | 2016-09-21 | 上海超硅半导体有限公司 | N型单晶硅晶锭及其制造方法 |
| US20180087179A1 (en) * | 2016-09-28 | 2018-03-29 | Corner Star Limited | Single crystal silicon ingots having doped axial regions with different resistivity and methods for producing such ingots |
| JP7080017B2 (ja) | 2017-04-25 | 2022-06-03 | 株式会社Sumco | ｎ型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ |
| JP6881571B2 (ja) | 2017-04-25 | 2021-06-02 | 株式会社Sumco | ｎ型シリコン単結晶の製造方法 |
| CN110158148A (zh) * | 2019-04-29 | 2019-08-23 | 江苏协鑫软控设备科技发展有限公司 | 晶硅及其晶体生长工艺 |
| US11585010B2 (en) | 2019-06-28 | 2023-02-21 | Globalwafers Co., Ltd. | Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant |
| JP2023549193A (ja) * | 2020-11-11 | 2023-11-22 | グローバルウェーハズ カンパニー リミテッド | 坩堝の腐食を低減させた単結晶シリコンインゴットを形成する方法 |
| US11742451B2 (en) * | 2020-11-24 | 2023-08-29 | Cisco Technology, Inc. | Integrate stressor with Ge photodiode using a substrate removal process |
| CN113862778A (zh) * | 2021-09-30 | 2021-12-31 | 西安奕斯伟材料科技有限公司 | 坩埚组件、拉晶炉及拉制单晶硅棒的方法 |
| KR102516630B1 (ko) * | 2021-10-18 | 2023-03-30 | 한화솔루션 주식회사 | 잉곳 성장 장치 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6379790A (ja) | 1986-09-22 | 1988-04-09 | Toshiba Corp | 結晶引上げ装置 |
| JPS6395195A (ja) | 1986-10-08 | 1988-04-26 | Toshiba Corp | 結晶引上げ方法及び装置 |
| JP2755588B2 (ja) * | 1988-02-22 | 1998-05-20 | 株式会社東芝 | 結晶引上げ方法 |
| JPH085740B2 (ja) * | 1988-02-25 | 1996-01-24 | 株式会社東芝 | 半導体の結晶引上げ方法 |
| JPH0392774U (enExample) | 1989-12-28 | 1991-09-20 | ||
| US5427056A (en) | 1990-10-17 | 1995-06-27 | Komatsu Electronic Metals Co., Ltd. | Apparatus and method for producing single crystal |
| JP3484870B2 (ja) | 1996-03-27 | 2004-01-06 | 信越半導体株式会社 | 連続チャージ法によるシリコン単結晶の製造方法およびドーパント供給装置 |
| JP2006315869A (ja) | 2005-05-10 | 2006-11-24 | Sumco Corp | 窒素ドープシリコン単結晶の製造方法 |
-
2012
- 2012-05-04 EP EP12781614.8A patent/EP2705178B1/en active Active
- 2012-05-04 US US13/464,203 patent/US10544517B2/en active Active
- 2012-05-04 KR KR1020137032404A patent/KR101939594B1/ko active Active
- 2012-05-04 CN CN201280030859.6A patent/CN103635613B/zh active Active
- 2012-05-04 WO PCT/US2012/036497 patent/WO2012154551A2/en not_active Ceased
- 2012-05-04 PH PH1/2013/502255A patent/PH12013502255A1/en unknown
- 2012-05-04 MY MYPI2013004019A patent/MY169752A/en unknown
- 2012-05-04 JP JP2014509471A patent/JP5909276B2/ja active Active
- 2012-05-07 TW TW101116159A patent/TWI588303B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014513034A (ja) | 2014-05-29 |
| CN103635613B (zh) | 2017-02-15 |
| WO2012154551A3 (en) | 2013-03-21 |
| CN103635613A (zh) | 2014-03-12 |
| US20120279437A1 (en) | 2012-11-08 |
| MY169752A (en) | 2019-05-15 |
| WO2012154551A2 (en) | 2012-11-15 |
| KR101939594B1 (ko) | 2019-01-17 |
| JP5909276B2 (ja) | 2016-04-26 |
| US10544517B2 (en) | 2020-01-28 |
| TW201303092A (zh) | 2013-01-16 |
| EP2705178A4 (en) | 2015-04-15 |
| EP2705178B1 (en) | 2016-07-06 |
| KR20140096993A (ko) | 2014-08-06 |
| TWI588303B (zh) | 2017-06-21 |
| EP2705178A2 (en) | 2014-03-12 |
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