JP2014511146A5 - - Google Patents
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- Publication number
- JP2014511146A5 JP2014511146A5 JP2014505353A JP2014505353A JP2014511146A5 JP 2014511146 A5 JP2014511146 A5 JP 2014511146A5 JP 2014505353 A JP2014505353 A JP 2014505353A JP 2014505353 A JP2014505353 A JP 2014505353A JP 2014511146 A5 JP2014511146 A5 JP 2014511146A5
- Authority
- JP
- Japan
- Prior art keywords
- dopant material
- silicon
- concentration
- zone
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161475351P | 2011-04-14 | 2011-04-14 | |
| US61/475,351 | 2011-04-14 | ||
| PCT/US2012/033593 WO2012142463A2 (en) | 2011-04-14 | 2012-04-13 | Silicon ingot having uniform multiple dopants and method and apparatus for producing same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016099240A Division JP2016179937A (ja) | 2011-04-14 | 2016-05-18 | 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014511146A JP2014511146A (ja) | 2014-05-12 |
| JP2014511146A5 true JP2014511146A5 (enExample) | 2015-05-07 |
Family
ID=47010006
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014505353A Pending JP2014511146A (ja) | 2011-04-14 | 2012-04-13 | 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置 |
| JP2016099240A Pending JP2016179937A (ja) | 2011-04-14 | 2016-05-18 | 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016099240A Pending JP2016179937A (ja) | 2011-04-14 | 2016-05-18 | 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10202705B2 (enExample) |
| EP (1) | EP2697412B1 (enExample) |
| JP (2) | JP2014511146A (enExample) |
| KR (1) | KR20140097971A (enExample) |
| CN (1) | CN103608496B (enExample) |
| MY (1) | MY173316A (enExample) |
| PH (1) | PH12013502137A1 (enExample) |
| TW (1) | TWI618678B (enExample) |
| WO (1) | WO2012142463A2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2994982B1 (fr) * | 2012-09-04 | 2016-01-08 | Commissariat Energie Atomique | Procede de fabrication d'une plaquette en silicium monolithique a multi-jonctions verticales. |
| WO2014185572A1 (ko) * | 2013-05-16 | 2014-11-20 | (주)에스테크 | 잉곳 원료 공급시스템 |
| US9822466B2 (en) | 2013-11-22 | 2017-11-21 | Corner Star Limited | Crystal growing systems and crucibles for enhancing heat transfer to a melt |
| US10724148B2 (en) * | 2014-01-21 | 2020-07-28 | Infineon Technologies Ag | Silicon ingot and method of manufacturing a silicon ingot |
| DE102014107590B3 (de) * | 2014-05-28 | 2015-10-01 | Infineon Technologies Ag | Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers |
| JP6299543B2 (ja) * | 2014-09-18 | 2018-03-28 | 信越半導体株式会社 | 抵抗率制御方法及び追加ドーパント投入装置 |
| US10337117B2 (en) | 2014-11-07 | 2019-07-02 | Infineon Technologies Ag | Method of manufacturing a silicon ingot and silicon ingot |
| CN104499048A (zh) * | 2014-12-07 | 2015-04-08 | 海安县石油科研仪器有限公司 | 一种连续加料的单晶硅生长工艺 |
| WO2018012654A1 (ko) * | 2016-07-14 | 2018-01-18 | 포토멕 주식회사 | 실리콘 반도체 잉곳 제조용 투입장치 및 도핑방법 |
| US10920337B2 (en) | 2016-12-28 | 2021-02-16 | Globalwafers Co., Ltd. | Methods for forming single crystal silicon ingots with improved resistivity control |
| US20190078231A1 (en) * | 2017-09-08 | 2019-03-14 | Corner Star Limited | Hybrid crucible assembly for czochralski crystal growth |
| EP3864197B1 (en) * | 2018-10-12 | 2022-08-03 | GlobalWafers Co., Ltd. | Dopant concentration control in silicon melt to enhance the ingot quality |
| WO2020210129A1 (en) | 2019-04-11 | 2020-10-15 | Globalwafers Co., Ltd. | Process for preparing ingot having reduced distortion at late body length |
| JP2022529451A (ja) | 2019-04-18 | 2022-06-22 | グローバルウェーハズ カンパニー リミテッド | 連続チョクラルスキー法を用いる単結晶シリコンインゴットの成長方法 |
| US11111597B2 (en) | 2019-09-13 | 2021-09-07 | Globalwafers Co., Ltd. | Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method |
| WO2021050176A1 (en) * | 2019-09-13 | 2021-03-18 | Globalwafers Co., Ltd. | Methods for growing a nitrogen doped single crystal silicon ingot using continuous czochralski method and a single crystal silicon ingot grown by this method |
| US11111596B2 (en) | 2019-09-13 | 2021-09-07 | Globalwafers Co., Ltd. | Single crystal silicon ingot having axial uniformity |
| TWI784689B (zh) * | 2020-09-29 | 2022-11-21 | 日商Ｓｕｍｃｏ股份有限公司 | 矽單結晶的製造方法 |
| US11499245B2 (en) * | 2020-12-30 | 2022-11-15 | Globalwafers Co., Ltd. | Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62502793A (ja) * | 1985-05-17 | 1987-11-12 | ダイアモンド・キュ−ビック・コ−ポレ−ション | 連続して引き出される単結晶シリコンインゴット |
| JPS6379790A (ja) | 1986-09-22 | 1988-04-09 | Toshiba Corp | 結晶引上げ装置 |
| JPH01138192A (ja) * | 1987-11-25 | 1989-05-31 | Sumitomo Electric Ind Ltd | 単結晶の成長方法及びその装置 |
| JP2615968B2 (ja) * | 1988-02-04 | 1997-06-04 | 三菱マテリアル株式会社 | 単結晶の引き上げ方法 |
| JP2755588B2 (ja) * | 1988-02-22 | 1998-05-20 | 株式会社東芝 | 結晶引上げ方法 |
| JPH0218377A (ja) | 1988-07-07 | 1990-01-22 | Nkk Corp | ドープ剤供給装置 |
| FI893246A7 (fi) * | 1988-07-07 | 1990-01-08 | Nippon Kokan Kk | Foerfarande och anordning foer framstaellning av kiselkristaller. |
| JPH0283292A (ja) * | 1988-09-20 | 1990-03-23 | Nkk Corp | シリコン単結晶の製造方法及び製造装置 |
| JPH03183686A (ja) * | 1989-12-13 | 1991-08-09 | Nippon Steel Corp | 単結晶引上げにおけるドーピング方法 |
| JP2837903B2 (ja) * | 1989-12-27 | 1998-12-16 | 新日本製鐵株式会社 | シリコン単結晶の製造方法 |
| DE4106589C2 (de) * | 1991-03-01 | 1997-04-24 | Wacker Siltronic Halbleitermat | Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski |
| DE4213097A1 (de) * | 1992-04-19 | 1993-10-21 | Nippon Kokan Kk | Zuführvorrichtung für Dotierungsstoffe für eine Vorrichtung zur Herstellung von Siliziumeinkristallen |
| US5288366A (en) * | 1992-04-24 | 1994-02-22 | Memc Electronic Materials, Inc. | Method for growing multiple single crystals and apparatus for use therein |
| JPH0676273A (ja) | 1992-08-27 | 1994-03-18 | Hitachi Ltd | 磁気ディスク及び磁気ディスクの製造方法 |
| JPH06204150A (ja) * | 1992-12-28 | 1994-07-22 | Sumitomo Sitix Corp | 半導体用シリコン単結晶基板の製造方法 |
| JP3484870B2 (ja) | 1996-03-27 | 2004-01-06 | 信越半導体株式会社 | 連続チャージ法によるシリコン単結晶の製造方法およびドーパント供給装置 |
| JP4634553B2 (ja) * | 1999-06-08 | 2011-02-16 | シルトロニック・ジャパン株式会社 | シリコン単結晶ウエーハおよびその製造方法 |
| JP2001240495A (ja) | 2000-02-29 | 2001-09-04 | Toshiba Ceramics Co Ltd | シリコン単結晶の引上げ方法 |
| JP4723071B2 (ja) * | 2000-10-24 | 2011-07-13 | 信越半導体株式会社 | シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法 |
| US7635414B2 (en) * | 2003-11-03 | 2009-12-22 | Solaicx, Inc. | System for continuous growing of monocrystalline silicon |
| US20070056504A1 (en) | 2005-09-12 | 2007-03-15 | Rexor Corporation | Method and apparatus to produce single crystal ingot of uniform axial resistivity |
| WO2009025336A1 (ja) * | 2007-08-21 | 2009-02-26 | Sumco Corporation | Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法 |
| FR2929960B1 (fr) * | 2008-04-11 | 2011-05-13 | Apollon Solar | Procede de fabrication de silicium cristallin de qualite photovoltaique par ajout d'impuretes dopantes |
| US8434511B2 (en) | 2009-07-08 | 2013-05-07 | Gt Advanced Cz Llc | Retractable and expandable water cooled valve gate useful for sealing a hot processing chamber |
-
2012
- 2012-04-13 PH PH1/2013/502137A patent/PH12013502137A1/en unknown
- 2012-04-13 CN CN201280028191.1A patent/CN103608496B/zh active Active
- 2012-04-13 US US13/446,353 patent/US10202705B2/en active Active
- 2012-04-13 MY MYPI2013003768A patent/MY173316A/en unknown
- 2012-04-13 WO PCT/US2012/033593 patent/WO2012142463A2/en not_active Ceased
- 2012-04-13 JP JP2014505353A patent/JP2014511146A/ja active Pending
- 2012-04-13 KR KR1020137030047A patent/KR20140097971A/ko not_active Ceased
- 2012-04-13 EP EP12771909.4A patent/EP2697412B1/en active Active
- 2012-04-16 TW TW101113441A patent/TWI618678B/zh active
-
2016
- 2016-05-18 JP JP2016099240A patent/JP2016179937A/ja active Pending
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