PL2208810T3 - Sposób zestalania półprzewodnika z dodawaniem wsadów półprzewodnika domieszkowego podczas krystalizacji - Google Patents

Sposób zestalania półprzewodnika z dodawaniem wsadów półprzewodnika domieszkowego podczas krystalizacji

Info

Publication number
PL2208810T3
PL2208810T3 PL09180793T PL09180793T PL2208810T3 PL 2208810 T3 PL2208810 T3 PL 2208810T3 PL 09180793 T PL09180793 T PL 09180793T PL 09180793 T PL09180793 T PL 09180793T PL 2208810 T3 PL2208810 T3 PL 2208810T3
Authority
PL
Poland
Prior art keywords
semiconductor
molten
dopants
bath
charge
Prior art date
Application number
PL09180793T
Other languages
English (en)
Inventor
Florence Servant
Denis Camel
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of PL2208810T3 publication Critical patent/PL2208810T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
PL09180793T 2009-01-05 2009-12-28 Sposób zestalania półprzewodnika z dodawaniem wsadów półprzewodnika domieszkowego podczas krystalizacji PL2208810T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0950016A FR2940806B1 (fr) 2009-01-05 2009-01-05 Procede de solidification de semi-conducteur avec ajout de charges de semi-conducteur dope au cours de la cristallisation
EP09180793A EP2208810B1 (fr) 2009-01-05 2009-12-28 Procédé de solidification de semi-conducteur avec ajout de charges de semi-conducteur dopé au cours de la cristallisation

Publications (1)

Publication Number Publication Date
PL2208810T3 true PL2208810T3 (pl) 2012-05-31

Family

ID=40848225

Family Applications (1)

Application Number Title Priority Date Filing Date
PL09180793T PL2208810T3 (pl) 2009-01-05 2009-12-28 Sposób zestalania półprzewodnika z dodawaniem wsadów półprzewodnika domieszkowego podczas krystalizacji

Country Status (9)

Country Link
US (1) US20100171232A1 (pl)
EP (1) EP2208810B1 (pl)
JP (1) JP5566699B2 (pl)
CN (1) CN103088407A (pl)
AT (1) ATE537280T1 (pl)
ES (1) ES2377859T3 (pl)
FR (1) FR2940806B1 (pl)
PL (1) PL2208810T3 (pl)
RU (1) RU2515561C2 (pl)

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* Cited by examiner, † Cited by third party
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NO335110B1 (no) * 2011-10-06 2014-09-15 Elkem Solar As Fremgangsmåte for fremstilling av silisiummonokrystall og multikrystalline silisiumingoter
FR3008224B1 (fr) 2013-07-08 2015-08-07 Commissariat Energie Atomique Aimant fritte annulaire a aimantation radiale, presentant une tenue mecanique renforcee
FR3010721B1 (fr) * 2013-09-17 2017-02-24 Commissariat Energie Atomique Procede de fabrication d'un lingot de silicium presentant une concentration homogene en phosphore
US10724148B2 (en) 2014-01-21 2020-07-28 Infineon Technologies Ag Silicon ingot and method of manufacturing a silicon ingot
DE102014107590B3 (de) * 2014-05-28 2015-10-01 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
US10337117B2 (en) 2014-11-07 2019-07-02 Infineon Technologies Ag Method of manufacturing a silicon ingot and silicon ingot
CN106400106B (zh) * 2016-08-31 2019-07-12 内蒙古中环光伏材料有限公司 一种提高直拉单晶硅轴向电阻率均匀性的方法及装置
CN106400108A (zh) * 2016-09-26 2017-02-15 江苏美科硅能源有限公司 一种多次形核铸造高效多晶硅锭及硅片技术
CN106319622A (zh) * 2016-09-26 2017-01-11 江苏美科硅能源有限公司 一种多阶段电阻率控制高效多晶硅片技术
CN107818930A (zh) * 2017-09-26 2018-03-20 合肥新汇成微电子有限公司 一种半导体晶圆uv固化方法
CN110528066A (zh) * 2019-09-03 2019-12-03 宁夏隆基硅材料有限公司 一种掺杂方法、单晶装置及单晶炉
CN111005064A (zh) * 2019-12-20 2020-04-14 银川隆基硅材料有限公司 单晶硅生长用掺杂剂的控制方法、装置、设备及存储介质
CN113008622B (zh) * 2021-03-09 2022-07-26 亚洲硅业(青海)股份有限公司 一种颗粒硅区熔检测采样装置

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JPS6126591A (ja) * 1984-07-18 1986-02-05 Fujitsu Ltd 結晶成長方法
JPH085740B2 (ja) * 1988-02-25 1996-01-24 株式会社東芝 半導体の結晶引上げ方法
EP0388503B1 (en) * 1989-02-03 1993-09-01 Mitsubishi Materials Corporation Method for pulling single crystals
DE4106589C2 (de) * 1991-03-01 1997-04-24 Wacker Siltronic Halbleitermat Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski
US6312517B1 (en) * 2000-05-11 2001-11-06 Memc Electronic Materials, Inc. Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method
RU2180742C1 (ru) * 2000-08-24 2002-03-20 Решетов Вячеслав Александрович Способ оптимизации эксплуатационных свойств твердого материала
DE10250822B4 (de) * 2002-10-31 2006-09-28 Siltronic Ag Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium
WO2005070691A1 (ja) * 2004-01-27 2005-08-04 Asahi Kasei Chemicals Corporation レーザー彫刻可能な印刷基材用感光性樹脂組成物
NO322246B1 (no) 2004-12-27 2006-09-04 Elkem Solar As Fremgangsmate for fremstilling av rettet storknede silisiumingots
EP1739210B1 (de) * 2005-07-01 2012-03-07 Freiberger Compound Materials GmbH Verfahren zur Herstellung von dotierten Halbleiter-Einkristallen, und III-V-Halbleiter-Einkristall
US20070056504A1 (en) * 2005-09-12 2007-03-15 Rexor Corporation Method and apparatus to produce single crystal ingot of uniform axial resistivity
JP2008088045A (ja) * 2006-09-05 2008-04-17 Sumco Corp シリコン単結晶の製造方法およびシリコンウェーハの製造方法
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Also Published As

Publication number Publication date
RU2515561C2 (ru) 2014-05-10
ES2377859T3 (es) 2012-04-02
JP2010189253A (ja) 2010-09-02
RU2009147685A (ru) 2011-06-27
US20100171232A1 (en) 2010-07-08
EP2208810A1 (fr) 2010-07-21
ATE537280T1 (de) 2011-12-15
CN103088407A (zh) 2013-05-08
JP5566699B2 (ja) 2014-08-06
EP2208810B1 (fr) 2011-12-14
FR2940806A1 (fr) 2010-07-09
FR2940806B1 (fr) 2011-04-08

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