JP5908045B2 - メトロロジ装置、リソグラフィ装置、リソグラフィセル及びメトロロジ方法 - Google Patents
メトロロジ装置、リソグラフィ装置、リソグラフィセル及びメトロロジ方法 Download PDFInfo
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
Description
[0059] 光学システムが収差、焦点はずれ、照明不均質性、またはそれらの組合せの影響を被る場合、(小さいターゲットオーバーレイ測定の)測定非対称性または(暗視野の)強度は、オーバーレイのみならず光ビーム内のターゲットの実際の位置によっても決まる。この位置を予測することはできないので、それが測定オーバーレイの重大なノイズおよび許容不可能な不正確につながる場合がある。正確な位置決めにかかる時間が装置のスループットを低下させることになる。より少ない収差で光エレメントを設けるだけで、装置はより高価になる。従って、位置依存エラーの補正技術を説明する。
●入力:(i)位置情報、(ii)焦点はずれ、(iii)収差を有するスカラーモデルを用いてオーバーレイの再構築を行うことができる。
●ライブラリ手法では、2次元変数およびパラメータとしての焦点はずれ−収差の組とともにスカラーまたはベクトルシミュレーションを用いることができる。鏡面反射に対する重なり依存の1次回折効率は、(線形)倍率として用いることができる。この目的のために、鏡面(0次)反射信号をセンサ19で測定することができ、一方、暗視野イメージをセンサ23によって捕捉する。
●較正手順の一部として焦点を測定し、この情報を補正手順において用いる、または事前に焦点を補正する。これは測定中に焦点が再生可能であることを必要とする。
●格子のイメージを分析することなどによって、各測定位置での焦点を測定する(および/または補正する)。
[0068] 発明の概要および要約の項目は、発明者が想定するような本発明の1つ以上の例示的実施形態について述べることができるが、全部の例示的実施形態を述べることはできず、従って本発明および請求の範囲をいかなる意味でも制限しないものとする。
Claims (10)
- 基板上の複数のターゲットの特性を測定するメトロロジ装置であって、
放射の照明ビームを放出する放射源と、
放射の測定ビームを前記基板上の前記複数のターゲット上に誘導し、かつ前記複数のターゲットによって回折した放射を集光する対物レンズと、
前記測定ビームを前記基板に対する法線を含まない円錐の角度内で前記基板に入射させるように配置された開口を有する開口プレートと、
前記複数のターゲットのイメージを検出するセンサと、を備え、
前記放射源、前記対物レンズ及び前記センサは、前記照明ビームが前記複数のターゲットを同時に照明するように、かつ、前記センサによって検出される前記複数のターゲットの前記イメージが1つの1次回折ビームと前記開口プレートの回転とによって2つ形成されるように、配置され、
前記メトロロジ装置は、
前記センサによって検出された前記複数のターゲットの2つの前記イメージを処理し、前記複数のターゲットを構成する個々のターゲットの別個のイメージを特定するイメージプロセッサと、
前記別個のイメージの各々から強度値を決定するコントローラであって、前記センサのイメージフィールド内の前記ターゲットのイメージの位置を決定し、かつ、決定された前記位置を参照して、決定された前記強度値またはオーバーレイ値の補正を行うコントローラと、をさらに備える、メトロロジ装置。 - 前記イメージプロセッサはパターンレコグナイザを備える、請求項1に記載のメトロロジ装置。
- 前記パターンレコグナイザは、4つ以上の別個のイメージのアレイを認識する、請求項2に記載のメトロロジ装置。
- 前記コントローラは、さらに、決定された前記強度値から、前記複数のターゲットの部分が形成される前記基板の層と層との間のオーバーレイエラーを決定する、請求項1〜3の何れか一項に記載のメトロロジ装置。
- パターンを照明する照明光学システムと、
前記パターンのイメージを基板上に投影する投影光学システムと、
請求項1〜4の何れか一項に記載のメトロロジ装置と、を備える、リソグラフィ装置。 - リソグラフィ装置と、
少なくとも1つのプロセスデバイスと、
基板ハンドラと、
請求項1〜4の何れか一項に記載のメトロロジ装置と、を備える、リソグラフィセル。 - 基板上の複数のターゲットの特性を測定する方法であって、
照明ビームを生成することと、
対物レンズを用いて測定ビームとしての前記照明ビームを前記複数のターゲット上に誘導することで前記測定ビームが前記複数のターゲットを同時に照明することと、
開口を有する開口プレートを用いて、前記測定ビームを前記基板に対する法線を含まない円錐の角度内で前記基板に入射させることと、
前記対物レンズを用いて、前記複数のターゲットによって回折した放射を集光することと、
前記複数のターゲットのイメージを検出し、当該イメージは1つの1次回折ビームと前記開口プレートの回転とによって2つ形成されることと、
前記検出された2つの前記イメージを処理し、前記複数のターゲットを構成する個々のターゲットの別個のイメージを特定することと、
前記別個のイメージの各々から強度値を決定することと、
前記複数のターゲットのイメージの位置に応じて、決定された前記強度値またはオーバーレイ値の補正を行うことと、を含む、方法。 - 前記特定することはパターンレコグナイザによって行われる、請求項7に記載の方法。
- 前記パターンレコグナイザは、4つ以上の別個のイメージのアレイを認識する、請求項8に記載の方法。
- 決定された前記強度値から、前記複数のターゲットの部分が形成される前記基板の層と層との間のオーバーレイエラーを決定することをさらに含む、請求項7〜9の何れか一項に記載の方法。
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US (1) | US8411287B2 (ja) |
EP (1) | EP2470960A1 (ja) |
JP (3) | JP2013502592A (ja) |
KR (2) | KR20120058572A (ja) |
CN (1) | CN102483582B (ja) |
IL (2) | IL218162A (ja) |
NL (1) | NL2005192A (ja) |
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JP2016145990A (ja) * | 2009-08-24 | 2016-08-12 | エーエスエムエル ネザーランズ ビー.ブイ. | メトロロジ装置、リソグラフィ装置、リソグラフィセル及びメトロロジ方法 |
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WO2011023517A1 (en) | 2011-03-03 |
EP2470960A1 (en) | 2012-07-04 |
NL2005192A (en) | 2011-02-28 |
CN102483582B (zh) | 2016-01-20 |
SG178368A1 (en) | 2012-04-27 |
IL218162A0 (en) | 2012-06-28 |
US20110043791A1 (en) | 2011-02-24 |
KR101642033B1 (ko) | 2016-07-22 |
KR20150058550A (ko) | 2015-05-28 |
JP2013502592A (ja) | 2013-01-24 |
IL218162A (en) | 2016-02-29 |
JP2015043450A (ja) | 2015-03-05 |
JP2016145990A (ja) | 2016-08-12 |
JP6663264B2 (ja) | 2020-03-11 |
IL243814A0 (en) | 2016-04-21 |
CN102483582A (zh) | 2012-05-30 |
IL243814A (en) | 2017-11-30 |
US8411287B2 (en) | 2013-04-02 |
KR20120058572A (ko) | 2012-06-07 |
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