JP5897862B2 - Semiconductor light emitting device - Google Patents

Description

  The present invention relates to a semiconductor light emitting device including a semiconductor light emitting element such as an LED element and a method for manufacturing the same, and more particularly, to a semiconductor light emitting device including a reflective member on a light emitting surface of a semiconductor light emitting element via a translucent member, and It relates to the manufacturing method.

  In recent years, an LED element (hereinafter abbreviated as “LED” unless otherwise specified) is a semiconductor light-emitting element, and therefore has a long life and excellent driving characteristics, and is small, has high luminous efficiency, and has a bright emission color. It has come to be widely used for backlights and lighting of color display devices. In the present invention, an LED light emitting device will be described as an example of a semiconductor light emitting device in which a semiconductor light emitting element is packaged with a resin or the like.

  In particular, in recent years, in order to relieve the strong directivity known as the light emission characteristics of the LED, the periphery of the LED is coated with a translucent resin as a translucent member, and a reflective layer is formed on the coated translucent resin. The LED light-emitting device (for example, Patent Document 1) provided with LED, and the periphery of the LED is coated with a translucent resin that is a translucent member, and further, the upper surface side of the coated translucent resin is lower than the translucent resin An LED light emitting device (for example, Patent Document 2) provided with a low refractive index resin layer having a refractive index has been proposed.

  Hereinafter, a conventional LED light emitting device in which a reflective member (reflective layer) is disposed on the upper surface of the translucent member will be described. For ease of understanding, the drawings are partially simplified within the scope not departing from the spirit of the invention, and component names are also included in the present application. FIG. 8 is a cross-sectional view of the LED light emitting device 100 disclosed in Patent Document 1. The LED light emitting device 100 includes an LED 101 flip-chip mounted on a wiring electrode (not shown) disposed on the upper surface of a circuit board 102, and a translucent resin 104 (translucent member) that seals the LED 101 so as to cover it. The reflective member 106 formed on the upper surface of the translucent resin 104 is provided. The reflection member 106 is made of a transflective metal foil film and is formed by vapor deposition or plating. By arbitrarily setting the reflectance (or transmittance) and area of the reflecting member 106, the thickness of the translucent resin 104, and the like, it is possible to control the amount of light emitted in the front direction and the spread angle of the emitted light. For example, the directivity can be improved by adjusting the amount of transmitted light Ps transmitted through the reflecting member 106 and the optical path length of the side light Po emitted in the side surface direction. The LED light emitting device 100 mitigates unevenness in light emission that varies with the azimuth even though it is composed of few components.

  Next, the light emitting operation of the LED light emitting device 100 will be described. When a drive current is supplied to the LED 101 from a drive electrode (not shown) of the circuit board 102 connected to a mother board (not shown) by soldering or the like, the LED 101 emits light. If there is no reflecting member 106, the LED 101 emits light in the side surface direction, but the upward emitted light becomes extremely strong. For this reason, the LED 101 is in a light emitting state in which the portion directly above the LED 101 is extremely strong and the periphery is weak. When this LED light emitting device 100 is incorporated in a lighting device, due to strong luminance unevenness of the LED 101, only the center of the LED 101 is bright and the surroundings are dark.

  In order to solve the above problem, in the LED light emitting device 100, the reflecting member 106 is disposed on the upper surface of the translucent resin 104 that seals the LED 101. That is, extremely strong radiated light that is going to be emitted from directly above the LED 101 is blocked or suppressed by the reflecting member 106, and further reflected by the reflecting member 106 and emitted from the surroundings. This improves luminance unevenness in which the front surface of the LED 101 is locally brightened.

The light emitting operation of the LED 101 will be described with the light beams P1 to P3. Among the light beams emitted from the LED 101, a part of the light beam P1 having a small emission angle passes through the reflecting member 106 and is emitted upward as the passing light Ps1, and the other part of the light beam P1 is reflected by the reflecting member 106 as indicated by a dotted line. After being repeatedly reflected between the circuit board 102 and the circuit board 102, the light is emitted from the side surface of the translucent resin 104 as side light Po <b> 1. The light ray P2 is repeatedly reflected between the reflecting member 106 and the circuit board 102 and emitted as side light P02. The light beam P3 is reflected by the reflecting member 106 and emitted from the side surface of the translucent resin 104 as side surface light Po3. Some of the light rays may be reflected at various interfaces and return to the inside of the translucent resin 104. As the reflecting member 106, a material that reflects light emitted from the LED 101, such as a white resin or a metal layer, is used.

  Next, the prior art described in Patent Document 2 will be described. In Patent Document 2, a semiconductor light-emitting element mounted on a circuit board is covered with a first resin having a high light-transmitting refractive index, and the outside of the first resin is covered with a second resin having a low light-transmitting refractive index. A two-layer semiconductor light emitting device is described. In this semiconductor light emitting device, the relationship among the refractive index N1 of the semiconductor light emitting element, the refractive index N2 of the first resin, and the refractive index N3 of the second resin is N1> N2> N3> 1. In this way, the light emitted from the semiconductor light emitting element is sequentially refracted outward, so that the emitted light is directed from the center to the outside as much as possible to alleviate light emission and luminance unevenness. The original purpose of Patent Document 2 is to improve the external light extraction efficiency by reducing the reflectance at the interface between the compound semiconductor light emitting element and the sealing resin and widening the critical angle of total reflection.

Japanese Patent Laying-Open No. 2001-257381 (FIG. 1) Japanese Patent Laid-Open No. 10-65220 (FIG. 5)

  In Patent Documents 1 and 2 described above, luminance unevenness has been improved by disposing reflective members and laminating translucent members. In the flat type lighting device, in addition to the improvement of the unevenness, a reduction in thickness is required. As one of the means for solving the problem, one that uses light emitted from the side surface of the LED body light emitting device is known. In this method, light emitted from the side surface of the LED light-emitting device is first spread in the horizontal direction and then directed in the vertical direction (irradiation direction) by a reflector or the like, and an optical element such as a lens becomes unnecessary. However, in the LED light-emitting devices disclosed in Patent Documents 1 and 2, even if the luminance unevenness is improved, the light emission efficiency in the side surface direction is not sufficient for aiming at thinning the flat illumination device.

  When attention is paid to the light beams P1, P2, and P3 of the LED light emitting device 100 described in Patent Document 1, a light beam P1 having a small emission angle and a light beam P2 having an intermediate size between the output angles are shown by dotted lines as shown in FIG. As shown in the figure, after reflection is repeated between the reflecting member 106 and the circuit board 102, the light is emitted as side light Po 1 and Po 2 from the side surface of the translucent resin 104. On the other hand, only the light beam P3 having a large emission angle is emitted as side light Po3 from the side surface of the translucent resin 104 only by the reflection of the reflection member 106. That is, the strong light beams P1 and P2 emitted from the LED 101 are repeatedly reflected between the reflecting member 106 and the circuit board 102 before being emitted from the side surface of the translucent resin 104. As a result, many light-emitting components are emitted from the side surface of the LED device with a loss due to reflection, so that the amount of light is reduced and the emission efficiency is deteriorated.

  Further, in the semiconductor light emitting device described in Patent Document 2, a strong light beam emitted from the central portion of the semiconductor light emitting element can be directed outward from the central portion by the two-layer sealing resin having different refractive indexes. However, in the structure of Patent Document 2, the light emitted in the upward direction is slightly inclined in the lateral direction and is also directed in the upward direction, so that the light distribution component in the lateral direction does not increase so much.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-described problems. A semiconductor light emitting device, a translucent resin that covers the side surface and the upper surface of the semiconductor light emitting device, and an upper surface of the translucent resin are provided. In the semiconductor light emitting device having the reflection member thus formed, the extraction efficiency of the light emitted in the lateral direction is improved.

In order to achieve the above object, the structure of the semiconductor light emitting device in the present invention is as follows.
In the semiconductor light-emitting device having a light-transmitting resin for covering the semiconductor light-emitting element side and top surfaces of the semiconductor light emitting element, and a first reflecting member provided on the upper portion of the light transmitting resin, the first reflection The member has a flat plate shape, a flat low refractive index layer having a lower refractive index than that of the light transmitting resin is provided between the upper surface of the light transmitting resin and the first reflecting member, and the semiconductor light emitting element projects. It has an electrode, The 2nd reflective member is provided in the lower surface of the said translucent resin, The said protruding electrode is exposed from this 2nd reflective member, It is characterized by the above-mentioned.

According to the above configuration, the low refractive index layer having a refractive index lower than that of the transparent resin is provided between the upper surface of the translucent resin and the reflecting member. By this low refractive index layer, light emitted from the semiconductor light emitting element is refracted in the lateral direction when entering the low refractive index layer from the translucent resin. For this reason, the number of reflections between the reflecting member and the circuit board is reduced, and the side light emitted in the lateral direction is increased to improve the light extraction efficiency in the lateral direction. In addition, the semiconductor light emitting device can be thinned by omitting the circuit board.

  The translucent resin is mixed with fluorescent particles for converting the wavelength of light emitted from the semiconductor light emitting element, and the low refractive index layer is preferably transparent.

  According to the said structure, a part of light emission of a semiconductor light-emitting device is wavelength-converted with the fluorescent substance contained in translucent resin. Since the wavelength-converted light emitted from the phosphor has no azimuth angle dependency, a component having a small incident angle with respect to the reflecting member is also included. This light having a small incident angle is difficult to emit in the lateral direction. On the other hand, since the low refractive index layer is transparent, there is no new light emission, and a component having a small incident angle with respect to the reflecting member is not increased. Thus, when the low refractive index layer is transparent, loss due to an increase in components having a small incident angle can be prevented.

  The first reflecting member may be a transflective layer or a reflecting plate having fine through holes.

  In the reflecting member, a metallic reflecting layer may be formed on the upper surface of the low refractive index layer by vapor deposition or sputtering.

  According to the manufacturing method, first, a film-like refractive index reflective layer in which a low refractive index layer and a reflective layer are integrated is prepared. This refractive index reflective layer is a large format film. Next, the large refractive index reflective layer is bonded to the upper surfaces of a large number of semiconductor light emitting elements mounted on a collective substrate connected with circuit boards and sealed with a light-transmitting resin. Finally, if the aggregate substrate is cut and separated into individual semiconductor light emitting devices, efficient mass production of the semiconductor light emitting devices can be achieved.

  As described above, according to the present invention, by providing a low refractive index layer having a refractive index lower than that of the translucent resin between the upper surface of the translucent resin and the reflecting member, the translucent resin is changed to the low refractive index layer. Incident light is refracted in the side surface direction of the semiconductor light emitting device, and the incident angle to the reflecting member is increased. As a result, the number of reflections between the reflecting member and the circuit board is reduced, the side light emitted in the lateral direction is increased, and the light extraction efficiency in the lateral direction is improved.

The LED light-emitting device in 1st Embodiment of this invention is shown, (a) is sectional drawing, (b) is a top view, (c) is a side view, (d) is a bottom view. It is sectional drawing which shows the emission characteristic of the LED light-emitting device shown to Fig.1 (a). It is sectional drawing which shows the state which attached the LED light-emitting device shown in FIG. 2 to the mother board | substrate with a side reflector. It is process drawing in the 1st manufacturing method of the LED light-emitting device of this invention. It is process drawing in the 2nd manufacturing method of the LED light-emitting device of this invention. It is process drawing in the 3rd manufacturing method of the LED light-emitting device of this invention. It is sectional drawing of the LED light-emitting device in 2nd Embodiment of this invention. It is sectional drawing which shows the emission characteristic in the LED light-emitting device of a prior art.

(First embodiment)
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an LED light emitting device 10 (semiconductor light emitting device) according to a first embodiment of the present invention, where (a) is a cross-sectional view of the LED light emitting device 10, and (b) is an upper surface of the LED light emitting device 10 shown in (a). (C) is a side view, (d) is a bottom view.

  In the cross-sectional view of the LED light emitting device 10 shown in FIG. 1A, the two wiring electrodes 3a provided on the upper surface of the circuit board 2 are connected to the drive electrode 3c through the through-hole electrode 3b. The LED 1 is flip-chip mounted (hereinafter abbreviated as FC mounting) on the wiring electrode 3a. The upper surface and the side surface of the LED 1 are covered with a translucent resin 4 mixed with fluorescent particles (hereinafter referred to as a fluorescent resin 4), and the upper surface of the fluorescent resin 4 has a low refractive index having a refractive index lower than that of the fluorescent resin 4. The refractive index layer 5 is adhered, and the reflective member 6 as the first reflective member is adhered to the upper surface of the low refractive index layer 5.

Next, the entire configuration of the LED light emitting device 10 will be described with reference to FIGS.
FIG. 1B is a top view of the LED light emitting device 10, and FIG. 1A corresponds to the AA cross-sectional view of FIG. In (b), the reflecting member 6 is required to have an appropriate light transmittance and an appropriate light reflectivity. For example, a white resin plate in which a reflective material such as titanium oxide is mixed in an acrylic resin or an epoxy resin, A thin metal layer, a metal plate having minute through holes, or the like can be used.

  Further, as shown in the side view of (c), two layers of a high refractive index fluorescent resin 4 and a low refractive index layer 5 are formed on the upper surface of the circuit board 2, and further on the upper surface of the low refractive index layer 5. A reflection member 6 is provided. As the translucent member of the fluorescent resin 4 having a high refractive index, a polycarbonate resin, an epoxy resin, or the like having good light resistance and a relatively high refractive index, for example, a refractive index of about 1.6 can be used. As the low refractive index layer 5, for example, a silicone resin having a refractive index of about 1.4 can be used, and it is more preferable to select a transparent resin having a refractive index of about 1.2 to 1.3. (D) is a bottom view of the LED light emitting device 10, and two drive electrodes 3 c are provided on the bottom surface of the circuit board 2.

  Next, the light emitting operation of the LED light emitting device 10 will be described with reference to FIG. FIG. 2 is a cross-sectional view showing the light emission state of the LED light emitting device 10 shown in FIG. 1, and the configuration is the same as that of the LED light emitting device 10 of FIG. In this embodiment, a blue LED as the LED 1, a YAG fluorescent resin that converts blue light emitted from the LED 1 into yellow light as the fluorescent resin 4, and a light emitting device that emits white light as the LED light emitting device 10 will be described. .

  In the LED light emitting device 10, the LED 1 emits blue light rays P1, P2, P3 and the like by supplying a drive current to the drive electrode 3c. A part of the blue light beam is transmitted through the semi-transmissive reflective member 6 and emitted as transmitted light Ps0, Ps1, and Ps2 as in the semiconductor light emitting device 100 shown in FIG.

Next, the locus of the blue light beams P1, P2, P3 emitted from the LED 1 will be described. Note that the blue light beams P1, P2, and P3 are described as being emitted at the same angle as the light beams P1, P2, and P3 shown in FIG.
Of the light rays emitted from the LED 1, the blue light ray P 1 having a small emission angle proceeds while being refracted so as to be directed outward (side direction) due to the difference in refractive index at the boundary between the fluorescent resin 4 and the low refractive index layer 5. Subsequently, the light beam P <b> 1 is reflected by the reflecting member 6, and then refracted again toward the inner side (the direction opposite to the side surface) at the boundary between the low refractive index layer 5 and the fluorescent resin 4. Finally, the light beam P1 is reflected by the circuit board 2 and is emitted from the side surface of the fluorescent resin 4 in the lateral direction of the LED light emitting device 10 as side surface light Po1.

  Further, the blue light beam P2 having a medium emission angle and the blue light beam P3 having a large emission angle are also refracted so as to be directed outward due to the refractive index difference at the boundary between the fluorescent resin 4 and the low refractive index layer 5. . The light beams P2 and P3 are reflected by the reflecting member 6, but are emitted as side light beams Po2 and Po3 directly from the side surface of the low refractive index layer 5 because the incident angle to the reflecting member 6 is large.

  As described above, by providing the low refractive index layer 5 in the LED light emitting device 10, the incident angle of the blue light beams P1, P2, P3 to the reflecting member 6 is increased. That is, even the blue light beam P1 having a small emission angle is emitted as the side light Po1 by performing the reflection between the reflection member 6 and the circuit board 2 only once, and the blue light beams P2 and P3 having a large emission angle are reflected by the reflection member. 6 is emitted as side light Po2 and Po3 only by reflection. Thus, it can be seen that the LED light emitting device 10 has improved light extraction efficiency in the lateral direction due to a decrease in the number of reflections.

  Regarding the above results, the locus of the light beam of the LED light emitting device 100 shown in FIG. 8 is compared with the locus of the light beam of the LED light emitting device 10. In the locus of the light beam of the LED light emitting device 100, the light ray P1 is reflected four times before being emitted as side light, and the light ray P2 is also reflected twice. In the locus of the light ray of the LED light emitting device 10, the blue light ray P1 is reflected. Is emitted as side light by two reflections, and the blue light beams P2 and P3 are emitted as side light by only one reflection on the reflecting member 6. In this way, the LED light emitting device 10 is less attenuated in light emission due to the reflection than the LED light emitting device 100, and the light emission efficiency in the lateral direction is improved. Similarly to the light emission from the LED 1, the light emission by the YAG phosphor is efficiently emitted from the side surface by the low refractive index layer 5.

  Next, the case where the LED light emitting device 10 is applied to a flat illumination device will be described with reference to FIG. FIG. 3 shows an example when the LED device 10 is applied to a flat illumination device, and shows a state in which the LED light emitting device 10 is mounted on a mother substrate 12 provided with a side reflector 16 in the flat illumination device. It is sectional drawing. The configuration of the LED light-emitting device 10 and the locus of light rays are the same as those of the LED light-emitting device 10 shown in FIG. The side reflector 16 is disposed around the LED light emitting device 10. At this time, since the flat illumination device has to distribute light uniformly over a wide range above the LED light emitting device 10, the side reflector 16 is sufficiently separated from the LED light emitting device 10, and the inclination of the reflecting portion is relaxed. It is necessary to keep. In FIG. 3, the side reflector 16 is brought close to the LED light emitting device 10 for the sake of explanation, and the inclination of the reflecting portion is also tight. The slope of the side reflector 16 is diffusely reflected.

  The side light Po1 emitted from the side surface of the LED device 10 is directly directed upward in the figure, and the side light Po2 and po3 are reflected by the side reflector 16 and directed upward. The side reflector 16 and the mother substrate 12 shown in FIG. 3 are part of the light source unit of the flat illumination device. Since the side light Po2 and Po3 spread upward along with the directly emitted side light Po1, the flat illumination device can be thinned.

(First manufacturing method)
Next, a first manufacturing method of the LED light emitting device 10 will be described with reference to FIG. FIG. 4 shows a manufacturing process of the LED light emitting device 10, (a) shows an LED mounting process, and is a cross-sectional view showing a state where the LED 1 is FC-mounted on the circuit board 2. (B) is a cross-sectional view showing a translucent resin sealing step, in which a side surface and an upper surface of the LED 1 FC-mounted on the circuit board 2 are covered with the fluorescent resin 4. (C) is a cross-sectional view showing a state where the low refractive index layer 5 is formed on the upper surface of the fluorescent resin 4, showing the low refractive index layer forming step. (D) is a cross-sectional view showing a reflective layer forming step in which the reflective member 6 is bonded to the upper surface of the low refractive index layer 5. And the structure of (d) is the completion figure of the semiconductor light-emitting device 10 shown to Fig.1 (a).

(Second manufacturing method)
Next, a second manufacturing method of the LED light emitting device 10 will be described with reference to FIG. FIG. 5 shows a second manufacturing process of the LED light emitting device 10. The manufacturing steps shown in FIGS. 5A and 5B are the same as (a) and (b) in the first manufacturing method shown in FIG. That is, the second manufacturing method shown in FIG. 5 differs from the first manufacturing method shown in FIG. 4 in that the low refractive index layer forming step shown in FIG. It is a process. In the refractive index reflective layer forming step, the low refractive index layer 5 and the reflective member 6 are integrated in advance to form the refractive index reflective layer 7. The refractive index reflective layer 7 is formed by bonding a metal reflective member 6 on the upper surface of a film (low refractive index layer 5) made of a low refractive index resin, vapor deposition, sputtering, or the like. (D) is an adhesion process, and shows a state in which the refractive index reflective layer 7 is adhered to the upper surface of the fluorescent resin 4 created in the translucent resin sealing process of (b). And the structure of (d) is the completion figure of the semiconductor light-emitting device 10 shown to Fig.1 (a).

(Third production method)
Next, a third manufacturing method of the LED light emitting device 10 will be described with reference to FIG. The manufacturing method shown in FIG. 6 is basically the same as the second manufacturing method shown in FIG. 5, and an assembly method is applied. In the third manufacturing method shown in FIG. 6, the most different point from the second manufacturing method shown in FIG. 5 is how to make the refractive index reflection layer 7a. As shown in FIG. 6A, the refractive index reflective layer 7a is formed by forming a metallic reflective layer 6a on the upper surface of a low refractive index resin large-sized low refractive index layer 5a by vapor deposition or sputtering. .

  Then, as shown in (b), first, a collective substrate 2a in which a large number of circuit boards 2 are connected is prepared, then LEDs are mounted on the collective substrate 2a, LED1 is sealed with a fluorescent resin 4, and finally The refractive index reflection layer 7a is adhered to the upper surface of the LED 1 at once. Thereafter, as shown in (c), the semiconductor light-emitting device 10 shown in (d) is simultaneously produced by cutting and separating along the cutting line C. As described above, the production of the semiconductor light emitting device 10 can be easily performed by preparing the large-sized sheet-like refractive index reflective layer 7a.

(Second Embodiment)
The LED light emitting device 10 was provided with a circuit board 2. The circuit board 2 has various functions, and as one of them, the electrode pitch of the LED 1 is adjusted to the electrode pitch of the mother board (referred to as an interposer). Recently, the size of the LED 1 has increased, and the electrode pitch of the LED 1 can be directly adapted to the electrode pitch of the mother substrate. In this case, the circuit board 2 may be omitted. Accordingly, referring to FIG. 7, as a second embodiment of the present invention, an LED light emitting device 20 of a type that has no circuit board and has different reflecting members disposed on the upper surface will be described. FIG. 7 is a cross-sectional view showing the LED light emitting device 20. The basic configuration and light emission characteristics of the LED light-emitting device 20 are the same as those of the LED light-emitting device 10 shown in FIG. 2, and the same members are denoted by the same reference numerals and redundant description is omitted.

  In the LED light emitting device 20 shown in FIG. 7, the side surface and the upper surface of the LED 21 are covered with the fluorescent resin 4 (translucent resin), and the low refractive index layer 5 and the first reflecting member 26 are laminated on the upper surface of the fluorescent resin 4. ing. In the LED light emitting device 20, the second reflecting member 23 is disposed on the electrode surface side of the LED 1, and the protruding electrode 21 a is exposed from the reflecting member 23 to the bottom surface side. The LED light emitting device 20 is thinned by omitting the circuit board by using the protruding electrode 21a as an electrode for connection with the mother board.

  The reflecting member 26 is made of a highly reflective metal plate and has a plurality of fine through holes 26a for light transmission. In the reflection member 26 having the above-described configuration, the reflection loss of the blue light beams P1, P2, and P3 is reduced by using a highly reflective metal plate such as Al, and the side light beams Po1, Po2, and Po3 emitted in the lateral direction are reduced. Can be further increased (the same applies to light emission by the phosphor). Further, since the passing lights Ps0, Ps1, etc. are directly emitted through the fine holes 26a, the amount of light attenuation is reduced. As a result, the LED light emitting device 20 can be brightened as a whole.

1,21,101 LED (semiconductor light emitting device)
2,102 Circuit board 2a Assembly board 3a Wiring electrode 3b Through-hole electrode 3c Drive electrode 4,104 Fluorescent resin (translucent resin)
5 Low refractive index layer 6, 26, 106 Reflective member 10, 20, 100 LED light emitting device (semiconductor light emitting device)
12 Mother board 16 Side reflector 21a Protruding electrode 23 Second reflecting member 26a Through hole P1, P2, P3 Ray Ps, Ps1, Ps2 Transmitted light Po, Po1-Po4 Side light

Claims (4)

In the semiconductor light-emitting device having a light-transmitting resin for covering the semiconductor light-emitting element side and top surfaces of the semiconductor light emitting element, and a first reflecting member provided on the upper portion of the light transmitting resin, the first reflection The member has a flat plate shape, a flat low refractive index layer having a lower refractive index than that of the light transmitting resin is provided between the upper surface of the light transmitting resin and the first reflecting member, and the semiconductor light emitting element projects. A semiconductor light emitting device comprising an electrode, comprising a second reflecting member on a lower surface of the translucent resin, wherein the protruding electrode is exposed from the second reflecting member.   The semiconductor light emitting device according to claim 1, wherein the translucent resin is mixed with fluorescent particles for converting the wavelength of light emitted from the semiconductor light emitting element, and the low refractive index layer is transparent.   3. The semiconductor light emitting device according to claim 1, wherein the first reflection member is a transflective layer or a reflection plate having a fine through hole. 4. The semiconductor light emitting device according to claim 1, wherein the first reflecting member has a metallic reflecting layer formed on the upper surface of the low refractive index layer by vapor deposition or sputtering. 5. apparatus.

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