CN114300603A - Light emitting device and preparation method thereof, lamp panel, backlight module and display device - Google Patents
Light emitting device and preparation method thereof, lamp panel, backlight module and display device Download PDFInfo
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- CN114300603A CN114300603A CN202111642621.6A CN202111642621A CN114300603A CN 114300603 A CN114300603 A CN 114300603A CN 202111642621 A CN202111642621 A CN 202111642621A CN 114300603 A CN114300603 A CN 114300603A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
The application provides a light-emitting device and a preparation method thereof, a lamp panel, a backlight module and a display device, wherein the light-emitting device comprises a transparent substrate, and the transparent substrate is provided with a light incident side and a light emergent side which are opposite; the light-emitting combination layer is positioned on the light-in side of the transparent substrate, and the reflection layer is positioned on the light-out side of the transparent substrate; the transparent substrate is provided with a light blocking surface and a refraction inclined surface on the light emergent side, the light blocking surface is opposite to the reflection layer, and the refraction inclined surface inclines towards the light incident side along the direction far away from the light blocking surface. The light-emitting device and the light-emitting method can improve the light-emitting angle of the light-emitting device and ensure the uniformity of light emission of the light-emitting device.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a light-emitting device, a manufacturing method thereof, a lamp panel, a backlight module and a display device.
Background
At present, when the LED chip is used as a backlight source of a display device, the phenomenon that the brightness of the LED chip is too bright right above the LED chip and the brightness of the periphery of the LED chip is weak often occurs, so that the LED chip emits light unevenly, and finally, the display effect of the display device is affected due to the fact that the light between adjacent LED chips is insufficient and the dark seams appear.
Disclosure of Invention
The application provides a light-emitting device, a preparation method thereof, a lamp panel, a backlight module and a display device, and aims to solve the technical problem that the light emitted by an existing LED chip is not uniform.
In a first aspect, the present application provides a light emitting device comprising:
the transparent substrate is provided with a light incidence side and a light emergence side which are opposite;
the light-emitting combination layer is positioned on the light-in side of the transparent substrate, and the reflection layer is positioned on the light-out side of the transparent substrate;
the transparent substrate is provided with a light blocking surface and a refraction inclined surface on the light emergent side, the light blocking surface is opposite to the reflection layer, and the refraction inclined surface inclines towards the light incident side along the direction far away from the light blocking surface.
In some embodiments, the refraction bevel is annularly arranged around the light blocking surface, and the reflecting layer is attached to the light blocking surface;
the reflecting layer is superposed with the light blocking surface; or
The reflecting layer is positioned in the center of the light blocking surface, and the reflecting layer is superposed with one part of the light blocking surface, and the other part of the light blocking surface forms a light transmitting area surrounding the reflecting layer.
In some embodiments, the refractive slope is a plurality;
the refraction inclined planes are arranged in a step shape along the direction far away from the light blocking surface; or
The refraction inclined planes are connected in sequence, and the included angle between each refraction inclined plane and the light blocking surface is gradually reduced along the direction away from the light blocking surface.
In some embodiments, the reflective layer is a plurality of reflective layers, and the plurality of reflective layers are uniformly spaced on the light blocking surface.
In some embodiments, the refractive bevel is a roughened surface.
In some embodiments, the transparent bonding layer is positioned at the light incidence side and attached to the transparent substrate;
the light-emitting combination layer is positioned on one side of the transparent bonding layer, which is far away from the transparent substrate.
In some embodiments, the light emitting device further comprises a transparent conductive layer, wherein the light emitting combination layer comprises a P-type semiconductor layer, a light emitting layer and an N-type semiconductor layer which are sequentially stacked;
the transparent conducting layer is attached to the P-type semiconductor layer; or
The transparent conducting layer is attached to the N-type semiconductor layer.
In some embodiments, the display device further comprises a current spreading strip, wherein one side of the current spreading strip is attached to the transparent conductive layer, and the other side of the current spreading strip is attached to the transparent bonding layer.
In some embodiments, further comprising a first electrode and a second electrode;
the current expansion strip is connected with the first electrode, and one of the P-type semiconductor layer and the N-type semiconductor layer which is not attached to the transparent conductive layer is connected with the second electrode.
In a second aspect, the present application provides a method for manufacturing a light emitting device, including:
providing an original substrate;
forming a light emitting composite layer on an original substrate;
forming a transparent substrate on the light-emitting combined layer, wherein one side of the transparent substrate, which is deviated from the light-emitting combined layer, is a light-emitting side, and the side, which is the same as the light-emitting combined layer, is a light-in side;
forming a reflecting layer on the light emergent side of the transparent substrate;
and processing the light-emitting side surface of the transparent substrate to form a refraction inclined surface, wherein the surface of the transparent substrate opposite to the reflecting layer is a light blocking surface, and the refraction inclined surface inclines towards the light-in side along the direction far away from the light blocking surface.
In some embodiments, further comprising:
and stripping the original substrate to form a conductive structure on the side of the light-emitting combination layer, which is far away from the transparent substrate.
The third aspect, this application provides a lamp plate, includes:
a circuit board;
the light-emitting device according to the first aspect, the light-emitting device is provided on a circuit board.
In a fourth aspect, the present application provides a backlight module, including the lamp panel as described in the third aspect.
In a fifth aspect, the present application provides a display device comprising the backlight module as described in the fourth aspect.
This application is through setting up the income light side at transparent substrate with luminous combination layer, after luminous combination layer produced light, light jets out through transparent substrate, because transparent substrate's light-emitting side has the face of hindering light relative with the reflector layer, light through hindering the face of light and jetting out will be reflected by the reflector layer, thereby can avoid hindering the phenomenon that light face department concentrated the light-emitting, and light after being reflected by the reflector layer jets out through the refraction inclined plane after luminescent device internal reflection is many times, again because the direction that the refraction inclined plane was followed and is kept away from and hinders the face of light to the income light side slope, light is changeed skew through the refraction inclined plane and is hindered the face of light, thereby can improve luminescent device light-emitting angle and guarantee the even of luminescent device light-emitting.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural view of a light-emitting device provided in an embodiment of the present application;
fig. 2 is a schematic view of light propagation inside a light emitting device provided in an embodiment of the present application;
FIG. 3 is a schematic structural diagram of a reflective layer and a transparent substrate provided in an embodiment of the present application;
FIG. 4 is a schematic view of another structure of the reflective layer and the transparent substrate provided in the embodiments of the present application;
FIG. 5 is a schematic view of another structure of a reflective layer and a transparent substrate provided in the embodiments of the present application;
FIG. 6 is a schematic view of another structure of the reflective layer and the transparent substrate provided in the embodiments of the present application;
FIG. 7 is a schematic view of another structure of a reflective layer and a transparent substrate provided in an embodiment of the present application;
fig. 8 is a schematic view of a manufacturing process of a light emitting device provided in an embodiment of the present application.
The light emitting diode comprises a transparent substrate 10, a light blocking surface 11, a refraction inclined surface 12, a light transmitting area 13, a vertical light emitting surface 14, a horizontal light emitting surface 15, a gap area 16, a light emitting combination layer 20, a 21P type semiconductor layer, a 22 light emitting layer, a 23N type semiconductor layer, a transparent conducting layer 24, a 25 current spreading strip, a 30 reflecting layer, a 40 transparent bonding layer, a 50 first electrode, a 60 second electrode, a 70 insulating layer and an 80 original substrate.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In this application, the word "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the invention. In the following description, details are set forth for the purpose of explanation. It will be apparent to one of ordinary skill in the art that the present invention may be practiced without these specific details. In other instances, well-known structures and processes are not shown in detail to avoid obscuring the description of the invention with unnecessary detail. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
The embodiment of the application provides a light-emitting device, a preparation method thereof, a lamp panel, a backlight module and a display device, which are respectively described in detail below.
First, referring to fig. 1, fig. 1 shows a schematic structural diagram of a light emitting device in an embodiment of the present application, where the light emitting device includes:
a transparent substrate 10, the transparent substrate 10 having opposite light-in and light-out sides;
the light-emitting device comprises a light-emitting combination layer 20 and a reflecting layer 30, wherein the light-emitting combination layer 20 is positioned on the light-in side of a transparent substrate 10, and the reflecting layer 30 is positioned on the light-out side of the transparent substrate 10;
the transparent substrate 10 has a light blocking surface 11 and a refraction slope 12 on the light exit side, the light blocking surface 11 is opposite to the reflective layer 30, and the refraction slope 12 is inclined toward the light entrance side along a direction away from the light blocking surface 11.
Specifically, the transparent substrate 10 has good light transmittance, and two opposite sides thereof are a light incident side and a light emergent side, respectively, taking fig. 1 as an example, the lower side of the transparent substrate 10 is the light incident side, and the upper side thereof is the light emergent side, so that after the light emitting combination layer 20 located at the light incident side emits light, the light is emitted through the light emergent side of the transparent substrate 10. Illustratively, the transparent substrate 10 may be a transparent material such as silicon dioxide, resin, or the like.
The light-emitting composite layer 20 has a multi-layer structure, and after the light-emitting composite layer 20 is powered on, the light-emitting composite layer 20 can generate light to emit light. As an exemplary example, the light emitting combination layer 20 has an inorganic light emitting laminated structure including a P-type semiconductor layer 21, a light emitting layer 22 and an N-type semiconductor layer 23 which are sequentially stacked, when the P-type semiconductor layer 21 is connected to a positive electrode of a power supply, and the N-type semiconductor layer 23 is connected to a negative electrode of the power supply, holes moving to the N-type semiconductor layer 23 are generated from the P-type semiconductor layer 21, electrons moving to the P-type semiconductor layer 21 are generated from the N-type semiconductor layer 23, and the holes with positive points and the electrons with negative points at the light emitting layer 22 are combined to radiate light, thereby finally realizing a process of emitting light by the light emitting combination layer 20.
It is understood that the light emitting combination layer 20 may also be other light emitting laminated structures, for example, an organic light emitting laminated structure in which the light emitting combination layer 20 includes an anode layer, a hole transport layer, an organic material light emitting layer, an electron transport layer, and a cathode layer; for another example, the light emitting combination layer 20 may also be a quantum dot light emitting stacked layer structure including an anode layer, a hole transport layer, a quantum dot layer, an electron transport layer, and a cathode layer.
The reflective layer 30 is used for reflecting light from an area where light is concentrated on the light-emitting side of the transparent substrate 10, so as to avoid the phenomenon that light is concentrated too much in a partial area of the light-emitting device. In general, the reflective layer 30 can be directly attached to the surface of the light-emitting side of the transparent substrate 10, so as to directly reflect light at the interface between the reflective layer 30 and the transparent substrate 10.
It is understood that other material layers, such as a scattering layer containing scattering particles, may be disposed between the reflective layer 30 and the transparent substrate 10, and both sides of the scattering layer are respectively attached to the reflective layer 30 and the transparent substrate 10, so that the light can be scattered after passing through the scattering layer, a part of the scattered light is reflected by the reflective layer 30, and another part of the light is emitted from the area not covered by the reflective layer 30, thereby adjusting the amount of light reflected by the reflective layer 30.
In the embodiment of the present application, the transparent substrate 10 has a light blocking surface 11 and a refraction slope 12 on the light exit side. Specifically, the light blocking surface 11 may be one or more, and the refraction slope 12 may also be one or more. Generally, referring to fig. 1, the light blocking surface 11 and the refraction slope 12 are planes, the light blocking surface 11 is perpendicular to the thickness direction of the light emitting device, and the refraction slope 12 forms a predetermined included angle with the thickness direction of the light emitting device, where the predetermined included angle is greater than 0 ° and less than 90 °. It is understood that the light blocking surface 11 and the refraction slope 12 can also be curved surfaces or a composite surface of a combination of curved surfaces and flat surfaces.
Meanwhile, the light blocking surface 11 is opposite to the reflective layer 30, and the refraction slope 12 is inclined to the light incident side in a direction away from the light blocking surface 11. Specifically, the light blocking surface 11 is opposite to the reflective layer 30, which means that at least part of the reflective layer 30 is overlapped with the light blocking surface 11, so that the reflective layer 30 can reflect the light emitted from the light blocking surface 11, and the light intensity above the light blocking surface 11 is reduced; refraction inclined plane 12 inclines to entering light side along the direction of keeping away from hindering plain noodles 11, and under this state, whole refraction inclined plane 12 is the slope form and arranges and both ends extend to the income light side and the light-emitting side of transparent substrate 10 respectively, and wherein, close to hindering plain noodles 11 to the one end that the light-emitting side extends, keeps away from hindering plain noodles 11 to the one end that enters light side extends, when light jets out through refraction inclined plane 12, can make the light of outgoing deviate more and hinder plain noodles 11, finally reaches the purpose that increases emergent ray angle.
Referring to fig. 2, fig. 2 shows a schematic diagram of light propagation of a light emitting device in the embodiment of the present application, when light generated by a light emitting combination layer 20 enters a transparent substrate 10, part of the light is emitted to a light blocking surface 11, and part of the light is emitted to a refraction inclined surface 12, because the light blocking surface 11 is opposite to a reflection layer 30, the reflection layer 30 can reflect light corresponding to the light blocking surface 11, so that a phenomenon of light concentration at the light blocking surface 11 can be avoided, and light reflected by the reflection layer 30 can be emitted through the refraction inclined surface 12 after being reflected multiple times inside the light emitting device, because the refraction inclined surface 12 is inclined toward a light incident side along a direction away from the light blocking surface 11, the light is more easily emitted to a side surface of the light emitting device through refraction, so that a light emitting angle of the light emitting device can be improved, and uniformity of light emission of the light emitting device can be ensured.
In order to ensure the uniformity of light around the light emitting device, in some embodiments of the present application, referring to fig. 3, fig. 3 illustrates a schematic structural diagram of the reflective layer 30 and the transparent substrate 10 in the embodiments of the present application, wherein the refraction slope 12 is annularly disposed around the light blocking surface 11, that is, the light blocking surface 11 is disposed at the center, and the refraction slope 12 is disposed around the light blocking surface 11, so that the reflective layer 30 can reflect light in the center of the light emitting device, and light refracted by the refraction slope 12 can be emitted to the periphery of the light emitting device, thereby ensuring the uniformity of light emitted from the light emitting device.
It is understood that the refraction slope 12 may be a plane or a curved surface in the above embodiments, for example, when the light emitting device has a cylindrical shape, the refraction slope 12 is a conical surface; when the light emitting device is a prism (e.g., a rectangular parallelepiped), the refraction slope 12 includes a plurality of planes corresponding to the edges.
In some embodiments of the present application, for example, for the embodiment where the refraction slope 12 is annularly disposed around the light-blocking surface 11, the size of the reflective layer 30 may be equal to the size of the light-blocking surface 11, for example, see fig. 3, wherein the reflective layer 30 is attached to the light-blocking surface 11, and the reflective layer 30 is overlapped with the light-blocking surface 11, so that the reflective layer 30 reflects all light rays of the light-blocking surface 11.
In other embodiments of the present application, the coverage area of the reflective layer 30 may be smaller than the area of the light-blocking surface 11, for example, referring to fig. 4, fig. 4 shows another structural diagram of the reflective layer 30 and the transparent substrate 10 in the embodiment of the present application, wherein the reflective layer 30 is located in the center of the light-blocking surface 11, and the reflective layer 30 is overlapped with a portion of the light-blocking surface 11, and another portion of the light-blocking surface 11 forms the light-transmitting region 13 surrounding the reflective layer 30. After the light-emitting combination layer 20 emits light, for the light passing through the transparent substrate 10, a part of the light is reflected by the reflection layer 30, and a part of the light is emitted through the light-transmitting area 13 surrounding the reflection layer 30, so that the annular light passing through the light-transmitting area 13 is emitted from the center of the transparent substrate 10, and the phenomenon of insufficient brightness of the light emitted from the center of the light-emitting device is avoided.
In some embodiments of the present application, the number of the refraction slopes 12 may also be multiple, as an exemplary one, referring to fig. 5, fig. 5 shows another structural schematic diagram of the reflection layer 30 and the transparent substrate 10 in the embodiments of the present application, wherein the multiple refraction slopes 12 are arranged in a step shape along a direction away from the light blocking surface 11, and a vertical light emitting surface 14 and a horizontal light emitting surface 15 are provided under adjacent refraction surfaces. When light passes through the refraction inclined plane 12, the vertical light-emitting plane 14 and the horizontal light-emitting plane 15, the light emitted from the vertical light-emitting plane 14 is more deviated to the side surface of the light-emitting device, the horizontal light-emitting plane 15 can ensure the intensity of the light above the edge of the light-emitting device, and the refraction inclined plane 12 can further supplement the light above the side surface and the edge of the light-emitting device, which is beneficial to further improving the light-emitting uniformity of the light-emitting device.
As another example, referring to fig. 6, fig. 6 shows another structural schematic diagram of the reflective layer 30 and the transparent substrate 10 in the embodiment of the present application, wherein a plurality of refraction slopes 12 are connected in sequence, and an included angle α between each refraction slope 12 and the light blocking surface 11 gradually decreases in a direction away from the light blocking surface 11. After the light rays are emitted out through the plurality of connected refraction inclined planes 12, because the number of the incident light rays of the refraction inclined plane 12 close to the light blocking plane 11 is large, the included angle alpha between the refraction inclined plane 12 close to the light blocking plane 11 and the light blocking plane 11 is large, and the excessive light rays are favorably refracted to the side surface of the light emitting device; and the incident light of the refraction inclined plane 12 far away from the light blocking surface 11 is less, so that the included angle alpha between the refraction inclined plane 12 far away from the light blocking surface 11 and the light blocking surface 11 is smaller, which is beneficial to ensuring the light intensity above the refraction inclined plane 12 far away from the light blocking surface 11, and is further beneficial to improving the light emitting uniformity of the light emitting device.
Similarly, in some embodiments of the present application, a plurality of reflective layers 30 may be disposed, for example, referring to fig. 7, fig. 7 shows another structural schematic diagram of the reflective layer 30 and the transparent substrate 10 in the embodiments of the present application, wherein the reflective layers 30 are a plurality of reflective layers 30, the plurality of reflective layers 30 are uniformly spaced on the light blocking surface 11, so that a gap region 16 is formed between adjacent reflective layers 30, when the light propagates onto the light blocking surface 11, a part of the light is reflected by the reflective layers 30, and another part of the light is directly emitted through the gap region 16, which can ensure that a proper light intensity is provided above the center of the light emitting device.
It can be understood that, since the light intensity at the center of the light blocking surface 11 is high, the reflective layer 30 at the center of the light blocking surface 11 can be densely arranged, and the size of the transmission area at the center of the light blocking surface 11 is reduced, so that the light intensity above the center of the light emitting device is appropriate.
In some embodiments of the present application, in order to further improve the light-emitting uniformity of the light-emitting device, refer to fig. 1, where the refraction slope 12 is a rough surface, that is, the refraction slope 12 has a concave-convex structure, in the concave-convex structure, the cross-sectional shape of the protruding portion at the light-emitting side may be a semicircle, a square, a triangle, or a trapezoid, and the specific shape may be set according to the process conditions, and is not described herein again. Because the refraction face is the rough face that has concave-convex structure, after light passed through refraction inclined plane 12, can further strengthen the scattering progress of light, and then be favorable to improving luminescent device's light-emitting homogeneity.
It will be appreciated that for other embodiments of the present application, the flat surface may be provided as a rough surface as well; for example, the vertical light exiting surface 14 and the horizontal light exiting surface 15 may be provided as rough surfaces; for example, the light blocking surface 11 of the gap region 16 between the adjacent reflective layers 30 may be provided as a rough surface.
At present, substrates such as a silicon substrate and a silicon carbide substrate are mainly adopted in the field of LED light-emitting chips, then a light-emitting combined layer 20 is prepared on the light-absorbing substrate, and the sapphire substrate has a light-absorbing phenomenon, so that the light-emitting rate of the LED light-emitting chips is reduced. However, the characteristics of the existing transparent material are not suitable for being directly used as a substrate for preparing the light emitting assembly layer 20 thereon, and for this reason, the inventors further improved on the problem, please refer to the following.
Continuing to refer to fig. 1, the light emitting device further includes a transparent bonding layer 40, the transparent bonding layer 40 is located on the light incident side and attached to the transparent substrate 10, the light emitting combination layer 20 is located on a side of the transparent bonding layer 40 away from the transparent substrate 10, and the light emitting combination layer 20 includes a P-type semiconductor layer 21, a light emitting layer 22 and an N-type semiconductor layer 23 which are sequentially stacked. After the light emitting assembly layer 20 is prepared on the original substrate 80 (e.g., a sapphire substrate), the transparent bonding layer 40 is prepared on the light emitting assembly layer 20, then the transparent substrate 10 is bonded on the transparent bonding layer 40, and finally the original substrate 80 is peeled off, so that the light emitting device including the transparent substrate 10 is formed. Illustratively, the transparent bonding layer 40 may be one or more of a silicon oxide layer, a silicon nitride layer, or an aluminum oxide layer.
Further, referring to fig. 1, the light emitting assembly layer 20 further includes a transparent conductive layer 24, the transparent conductive layer 24 is attached to the P-type semiconductor layer 21, and the transparent conductive layer 24 can ensure that the light transmission of the light emitting layer 22 is not affected while the P-type semiconductor layer 21 is energized.
It is understood that the above embodiments are based on the fact that light needs to continue to propagate through the P-type semiconductor layer 21, so as to attach the transparent conductive layer 24 to the P-type semiconductor layer 21, and in fact, when light needs to continue to propagate through the N-type semiconductor layer 23 to the transparent substrate 10, the transparent conductive layer 24 may actually be attached to the N-type semiconductor layer 23.
Further, with reference to fig. 1, the light emitting assembly layer 20 further includes a current spreading bar 25, one side of the current spreading bar 25 is attached to the transparent conductive layer 24, and the other side is attached to the transparent bonding layer 40, so that the current spreading bar 25 can enhance the current spreading effect and ensure the current uniformity of the transparent conductive layer 24.
Further, the light emitting device further includes a first electrode 50 and a second electrode 60, the current spreading bar 25 is connected to the first electrode 50, and one of the P-type semiconductor layer 21 and the N-type semiconductor layer 23, which is not attached to the transparent conductive layer 24, is connected to the second electrode 60, for example, referring to fig. 1, the N-type semiconductor layer 23 is connected to the second electrode 60, so that the light emitting device can be powered on through the first electrode 50 and the second electrode 60, and then emits light.
It is understood that, in order to avoid the leakage phenomenon, the light emitting device further includes an insulating layer 70, referring to fig. 1, the insulating layer 70 is located on the lower surface of the N-type semiconductor layer 23, and only the second electrode 60 is connected to the N-type semiconductor layer 23, so as to avoid the leakage disconnection phenomenon at the lower portion of the light emitting device.
It should be noted that the above contents of the light emitting device are mainly for clearly explaining the verification process of the present application, and those skilled in the art can make equivalent modified designs under the guidance of the present application, for example, each of the refraction slopes 12 of the step arrangement is a conical surface; for another example, the refraction slope 12 may be only located on one side of the light blocking surface 11, so that the phenomenon of light concentrated from one side of the light emitting device will be avoided.
Further, in order to better implement the light emitting device in the present application, on the basis of the light emitting device, the present application further provides a method for manufacturing the light emitting device, and referring to fig. 8, fig. 8 shows a schematic diagram of a manufacturing process of the light emitting device in the embodiment of the present application, wherein the method for manufacturing the light emitting device includes:
step S801, providing an original substrate 80;
the original substrate 80 may be a sapphire substrate, a silicon carbide substrate, or the like.
Step S802, forming a light emitting composite layer 20 on an original substrate 80;
specifically, the light emitting composite layer 20 includes an N-type semiconductor layer 23, a light emitting layer 22, a P-type semiconductor layer 21, a transparent conductive layer 24, and a current spreading bar 25, which are sequentially stacked. The sequentially stacked light-emitting combination layers 20 may be prepared on the original substrate 80 by evaporation, electrochemical deposition, and the like, and the corresponding processes may be selected according to actual situations, which is not described herein again.
Step S803, forming a transparent substrate 10 on the light-emitting combination layer 20, where a side of the transparent substrate 10 away from the light-emitting combination layer 20 is a light-emitting side, and a side identical to the light-emitting combination layer 20 is a light-entering side;
specifically, the transparent substrate 10 may be formed on the light emitting assembly layer 20 by using a bonding technique, for example, continuing to evaporate the transparent bonding layer 40 on the current spreading bar 25, and bonding the transparent substrate 10 to the light emitting assembly layer 20 by using a bonding process, such as gold-silicon eutectic bonding, silicon/glass electrostatic bonding, silicon/silicon direct bonding, and the like.
Step S804, forming a reflective layer 30 on the light exit side of the transparent substrate 10;
after the transparent substrate 10 is formed, the reflective layer 30 may be continuously formed on the transparent substrate 10. Specifically, the reflective layer 30 may be evaporated on the surface of the light exit side of the transparent substrate 10 by an evaporation process, so that the reflective layer 30 may reflect the light of the light exit side.
Step S805, processing the light exit side surface of the transparent substrate 10 to form a refraction slope 12, where the surface of the transparent substrate 10 opposite to the reflective layer 30 is a light blocking surface 11, and the refraction slope 12 inclines toward the light entrance side along a direction away from the light blocking surface 11;
specifically, a part of the transparent substrate 10 may be etched away by a photolithography process and an Inductively Coupled Plasma (ICP) etching process, so that the refraction slope 12 is formed on the light exit side surface of the transparent substrate 10, and since the ICP process may roughen the surface, the refraction slope 12 may be processed into a rough surface. It will be appreciated that other processes, such as wet etching, may be used to roughen the refractive bevels 12.
Step S806, the original substrate 80 is peeled off, and a conductive structure is formed on the side of the light emitting assembly layer 20 away from the transparent substrate 10.
After the processing of the transparent substrate 10 side of the light emitting device is completed, the original substrate 80 is peeled off, and a conductive structure is formed on the side of the light emitting assembly layer 20 away from the transparent substrate 10. Specifically, the original substrate 80 may be peeled off using a laser lift-off technique.
For forming the conductive structure, the insulating layer 70 may be evaporated on the N-type semiconductor layer 23, and a portion of the current spreading bar 25 and a portion of the N-type semiconductor layer 23 are exposed by using a photolithography process, a dry etching process or a wet etching process, and then the first electrode 50 and the second electrode 60 are evaporated on the exposed current spreading bar 25 and the exposed N-type semiconductor layer 23, so that the first electrode 50 is electrically connected to the current spreading bar 25, and the second electrode 60 is electrically connected to the N-type semiconductor layer 23, thereby finally completing the manufacturing process of the light emitting device.
It should be noted that the sequence of the above steps S804 and S805 may be interchanged, for example, after the refractive slope 12 is formed on the transparent substrate 10, the reflective layer 30 is prepared on the remaining light-blocking surface 11; preferably, step S805 in this embodiment of the present application is performed after step S804, and a photolithography process and an Inductively Coupled Plasma (ICP) etching process may simultaneously remove a portion of the reflective layer 30 corresponding to the refractive slope 12 when forming the refractive slope 12, and correspondingly, if step S804 is performed first and step S805 is performed next, the refractive slope 12 needs to be protected when evaporating the reflective layer 30, so that step S805 performed after step S804 may be beneficial to reducing difficulty in manufacturing the light emitting device.
Further, for better implementing the light emitting device in this application, on light emitting device's basis, this application still provides a lamp plate, including circuit board and the light emitting device as above-mentioned any one embodiment, light emitting device sets up on the circuit board, because light emitting device has great light-emitting angle and the even characteristics of light-emitting, can be so that the whole luminance of lamp plate is even, the reducible light emitting device's of great light-emitting angle use amount reduces lamp plate manufacturing cost simultaneously.
Further, for better implement the lamp plate in this application, on the basis of lamp plate, this application still provides a backlight unit, and backlight unit includes the lamp plate of above-mentioned embodiment. The backlight module in this application embodiment is because of being provided with the lamp plate of above-mentioned embodiment to have the whole beneficial effect of above-mentioned lamp plate, no longer describe here.
Further, for a better embodiment of the backlight module in the present application, on the basis of the backlight module, the present application further provides a display device, and the display device includes the backlight module of the above embodiment. Because the backlight module has uniform light-emitting brightness, the phenomenon of blind seams between pixel points of the display device for displaying images can be avoided, and the improvement of the picture quality of the display device is further facilitated.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and parts that are not described in detail in a certain embodiment may refer to the above detailed descriptions of other embodiments, and are not described herein again.
Having thus described the basic concept, it will be apparent to those skilled in the art that the foregoing detailed disclosure is to be considered merely illustrative and not restrictive of the broad application. Various modifications, improvements and adaptations to the present application may occur to those skilled in the art, although not explicitly described herein. Such modifications, improvements and adaptations are proposed in the present application and thus fall within the spirit and scope of the exemplary embodiments of the present application.
Also, this application uses specific language to describe embodiments of the application. Reference throughout this specification to "one embodiment," "an embodiment," and/or "some embodiments" means that a particular feature, structure, or characteristic described in connection with at least one embodiment of the present application is included in at least one embodiment of the present application. Therefore, it is emphasized and should be appreciated that two or more references to "an embodiment" or "one embodiment" or "an alternative embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, some features, structures, or characteristics of one or more embodiments of the present application may be combined as appropriate.
Similarly, it should be noted that in the preceding description of embodiments of the application, various features are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure aiding in the understanding of one or more of the embodiments. This method of disclosure, however, is not intended to require more features than are expressly recited in the claims. Indeed, the embodiments may be characterized as having less than all of the features of a single embodiment disclosed above.
Numerals describing the number of components, attributes, etc. are used in some embodiments, it being understood that such numerals used in the description of the embodiments are modified in some instances by the use of the modifier "about", "approximately" or "substantially". Unless otherwise indicated, "about", "approximately" or "substantially" indicates that the number allows a variation of ± 20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximations that may vary depending upon the desired properties of the individual embodiments. In some embodiments, the numerical parameter should take into account the specified significant digits and employ a general digit preserving approach. Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the range are approximations, in the specific examples, such numerical values are set forth as precisely as possible within the scope of the application.
For each patent, patent application publication, and other material cited in this application, such as articles, books, specifications, publications, documents, and the like, the entire contents of which are hereby incorporated by reference into this application, except for application history documents that are inconsistent with or conflict with the contents of this application, and except for documents that are currently or later become incorporated into this application as though fully set forth in the claims below. It is noted that the descriptions, definitions and/or use of terms in this application shall control if they are inconsistent or contrary to the statements and/or uses of the present application in the material attached to this application.
The light emitting device and the manufacturing method thereof, the lamp panel, the backlight module and the display device provided by the embodiments of the present application are described in detail above, and the principle and the implementation manner of the present invention are explained in this document by applying specific examples, and the description of the embodiments above is only used to help understanding the method and the core idea of the present invention; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (14)
1. A light emitting device, comprising:
the device comprises a transparent substrate, a light source and a light guide plate, wherein the transparent substrate is provided with a light inlet side and a light outlet side which are opposite;
the light-emitting combination layer is positioned on the light-in side of the transparent substrate, and the reflection layer is positioned on the light-out side of the transparent substrate;
the transparent substrate is provided with a light blocking surface and a refraction inclined surface on the light emergent side, the light blocking surface is opposite to the reflecting layer, and the refraction inclined surface inclines towards the light incident side along the direction far away from the light blocking surface.
2. The light-emitting device according to claim 1, wherein the refractive slope is annularly disposed around the light blocking surface, and the reflective layer is attached to the light blocking surface;
the reflecting layer is superposed with the light blocking surface; or
The reflection layer is located in the center of the light blocking surface, the reflection layer is overlapped with one part of the light blocking surface, and the other part of the light blocking surface forms a light transmitting area surrounding the reflection layer.
3. The light emitting device according to claim 1, wherein the refractive slope is plural;
the refraction inclined planes are arranged in a step shape along the direction far away from the light blocking surface; or
The refraction inclined planes are connected in sequence, and the included angle between each refraction inclined plane and the light blocking plane is gradually reduced along the direction away from the light blocking plane.
4. The light-emitting device according to claim 1, wherein the reflective layer is provided in plurality, and the plurality of reflective layers are provided at regular intervals on the light blocking surface.
5. The light emitting device of claim 1, wherein the refractive bevel is a roughened surface.
6. The light-emitting device according to any one of claims 1 to 5, further comprising a transparent bonding layer located at the light-incident side and attached to the transparent substrate;
the light-emitting combination layer is positioned on one side, away from the transparent substrate, of the transparent bonding layer and comprises a P-type semiconductor layer, a light-emitting layer and an N-type semiconductor layer which are sequentially stacked.
7. The light emitting device according to claim 6, wherein the light emitting composite layer further comprises a transparent conductive layer;
the transparent conducting layer is attached to the P-type semiconductor layer; or
And the transparent conducting layer is attached to the N-type semiconductor layer.
8. The light emitting device of claim 7, wherein the light emitting composite layer further comprises a current spreading strip attached to the transparent conductive layer on one side and attached to the transparent bonding layer on the other side.
9. The light-emitting device according to claim 8, further comprising a first electrode and a second electrode;
the current expansion strip is connected with the first electrode, and one of the P-type semiconductor layer and the N-type semiconductor layer which is not attached to the transparent conductive layer is connected with the second electrode.
10. A method of fabricating a light emitting device, comprising:
providing an original substrate;
forming a light emitting assembly layer on the original substrate;
forming a transparent substrate on the light-emitting combined layer, wherein one side of the transparent substrate, which is far away from the light-emitting combined layer, is a light-emitting side, and the side, which is the same as the light-emitting combined layer, is a light-in side;
forming a reflecting layer on the light emergent side of the transparent substrate;
and processing the light emergent side surface of the transparent substrate to form a refraction inclined surface, wherein the surface of the transparent substrate opposite to the reflecting layer is a light blocking surface, and the refraction inclined surface inclines towards the light incident side along the direction far away from the light blocking surface.
11. The method for manufacturing a light emitting device according to claim 10, further comprising:
and stripping the original substrate to form a conductive structure on the side of the light-emitting combination layer, which is far away from the transparent substrate.
12. The utility model provides a lamp plate, its characterized in that includes:
a circuit board;
the light-emitting device according to any one of claims 1 to 9, which is provided on the circuit board.
13. A backlight module comprising the lamp panel of claim 12.
14. A display device comprising the backlight module according to claim 13.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111642621.6A CN114300603A (en) | 2021-12-29 | 2021-12-29 | Light emitting device and preparation method thereof, lamp panel, backlight module and display device |
| PCT/CN2022/125104 WO2023124392A1 (en) | 2021-12-29 | 2022-10-13 | Light-emitting device and manufacturing method therefor, lamp board, backlight module, and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202111642621.6A CN114300603A (en) | 2021-12-29 | 2021-12-29 | Light emitting device and preparation method thereof, lamp panel, backlight module and display device |
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| CN114300603A true CN114300603A (en) | 2022-04-08 |
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| CN202111642621.6A Pending CN114300603A (en) | 2021-12-29 | 2021-12-29 | Light emitting device and preparation method thereof, lamp panel, backlight module and display device |
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| WO (1) | WO2023124392A1 (en) |
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| WO2023124392A1 (en) * | 2021-12-29 | 2023-07-06 | 惠州视维新技术有限公司 | Light-emitting device and manufacturing method therefor, lamp board, backlight module, and display device |
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