CN107123713B - Device structure suitable for monochromatic light LED wafer level packaging - Google Patents
Device structure suitable for monochromatic light LED wafer level packaging Download PDFInfo
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- CN107123713B CN107123713B CN201610105024.2A CN201610105024A CN107123713B CN 107123713 B CN107123713 B CN 107123713B CN 201610105024 A CN201610105024 A CN 201610105024A CN 107123713 B CN107123713 B CN 107123713B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 11
- 238000002834 transmittance Methods 0.000 claims description 11
- 230000009286 beneficial effect Effects 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000007788 roughening Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 8
- 229910002601 GaN Inorganic materials 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 77
- 238000000605 extraction Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 239000000741 silica gel Substances 0.000 description 5
- 229910002027 silica gel Inorganic materials 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 235000009537 plain noodles Nutrition 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 241000826860 Trapezium Species 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a device structure suitable for monochromatic light LED wafer level packaging, which at least comprises: the LED chip comprises a transparent substrate, a thin-film flip-chip structure light-emitting diode chip bonded on the upper surface of the transparent substrate, and a first reflecting mirror and a passivation layer which sequentially cover the transparent substrate and the side surface of the flip-chip structure light-emitting diode chip. The transparent substrate is processed into a trapezoidal structure easy to emit light, and the lower surface of the transparent substrate is provided with a microscopic lens array or a V-shaped groove and other structures easy to emit light. The surface of the N-type semiconductor layer of the thin film flip light-emitting diode chip is provided with a microcosmic conical coarsening structure which is bonded on the upper surface of the transparent substrate, so that light emitted by the LED chip can easily enter the transparent substrate. The first reflector and the reflector on the surface of the thin film flip chip P-type layer form a trapezoidal reflecting cup, so that monochromatic light emitted by the chip completely enters the transparent substrate from the surface of the N-type semiconductor layer and then is emitted to the air from the lower surface of the transparent substrate with a structure easy for light emitting. The transparent substrate material with moderate refractive index can greatly reduce the total reflection of light from gallium nitride to air, and increase the light-emitting efficiency of the device.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a device structure suitable for monochromatic LED wafer level packaging.
Background
The light emitting diode has the advantages of small volume, high efficiency, long service life and the like, and is widely applied to the fields of traffic indication, outdoor full color display and the like. In particular, the semiconductor solid-state lighting can be realized by using high-power light-emitting diodes, which has led to the revolution of the human lighting history, and thus has gradually become a research hotspot in the field of electronics at present. The light extraction efficiency of an LED refers to the ratio of photons that exit the device for utilization to photons generated by electron-hole recombination in the active region of the epitaxial wafer. In a conventional LED device, due to the existence of factors such as substrate absorption, electrode blocking, and total reflection of the light-emitting surface, the light extraction efficiency is usually less than 10%, and most of photons are confined inside the device and cannot be emitted to be converted into heat, which becomes a bad factor affecting the reliability of the device. In order to improve the light extraction efficiency, reflect more photons generated in the device body to the outside of the device body, and improve the internal thermal characteristics of the device, through years of research and practice, various methods for improving the light extraction efficiency have been proposed, such as a current distribution and current expansion structure, a chip shape geometric structure, a surface microscopic light extraction structure, and the like.
The chip structure of the LED is usually silicon carbide, silicon, sapphire (the main component is Al)2O3) The substrate is provided with an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially extended. Further, a P electrode is disposed on the P-type semiconductor layer, and an N electrode is disposed on the N-type semiconductor layer. The final chip may be a face-up structure, a flip-chip structure, a vertical structure, etc. At present, the LED device with the inverted structure is commonly used, the light emitting surface is a sapphire growth substrate, but the light transmittance (300 nm-700 nm) of the sapphire growth substrate is less than 80%, a large part of light is absorbed by the sapphire growth substrate, the heat conductivity of the sapphire substrate is poor, and the heat dissipation is not good, so that the LED substrate material needs to be improved. In addition, the light side leakage of the existing LED structure is also serious, so that the light emitting efficiency is reduced.
As shown in the attached figure 1, the traditional LED packaging device adopts silica gel to completely wrap a chip so as to prevent the chip from losing efficacy due to the influence of natural environment, and has the following defects that 1, the gold ball bonding process is adopted, the current expansion is uneven, and the device can lose efficacy due to uneven heating of the chip; 2: the light-emitting surface of the chip is a sapphire substrate (flip chip) or a P-type semiconductor growth layer, and a micro light-emitting structure which is easy to emit light is not easy to process on the light-emitting surface of the chip; the light-emitting surface of the device is silica gel, so that the device is not easy to be processed into a microcosmic light-emitting structure which is beneficial to light-emitting, and the light efficiency of the whole chip is not high; 4: the light emergent path passes through the active layer, the N-type semiconductor growth layer, the sapphire substrate and the silica gel, the refractive indexes of the light emergent medium are respectively 2.5, 1.7 and 1.5, and the light transmittance of the silica gel is lower (the visible light range: 80%), so that the light efficiency of the device is reduced after the device is packaged;
therefore, how to break through the prior art to further improve the yield of the chip, the heat dissipation capability of the chip, and the light extraction rate is still a technical issue to be solved urgently by those skilled in the art.
The LED device disclosed by the invention completely wraps the chip by adopting the transparent substrate with better sealing property, further reduces the failure of the device caused by the influence of natural factors, and has the following characteristics: 1: the chip adopts a thin film flip chip structure, and can be packaged by adopting a reflow soldering process when a device is packaged, so that packaging bonding wires are reduced, and meanwhile, the contact area of the electrode of the device is increased, and the uniform expansion of current is facilitated; 2: the light emitting surface of the chip is an N-type semiconductor growth layer of a microcosmic light emitting structure array which is easily obtained by adopting a wet process, so that the light efficiency of the chip is further improved; 3: the light emitting surface of the device is a transparent substrate which is easy to process into a micro-lens array structure or a V-shaped groove structure which is arranged in a criss-cross mode, and the light efficiency of the device is further improved; 4: the light emergent path passes through the active layer, the coarsened N-type semiconductor growth layer and the transparent substrate with a microcosmic light emergent structure and high light transmittance (more than 90%), the refractive indexes of the light emergent medium are respectively 2.5, 2.5 and 1.5, the absorption of silica gel to light is reduced, and the performance of the whole device is further improved.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a device structure suitable for monochromatic light LED die level package, which is used to solve the problems of light side leakage, poor heat dissipation, low light extraction efficiency, etc. of monochromatic light LED devices in the prior art.
To achieve the above and other related objects, the present invention provides a device structure suitable for monochromatic light LED die-level packaging, the packaged device structure at least comprising:
a transparent substrate having an upper surface, a lower surface, and a side surface;
the thin film flip structure light emitting diode is bonded on the upper surface of the transparent substrate, and a coarsening structure is arranged on the bonding surface of the thin film flip structure light emitting diode and the transparent substrate;
the first reflector covers the transparent substrate and the side face of the thin film flip structure light emitting diode;
and the passivation layer covers the surface of the first reflecting mirror.
As an optimized scheme of the device structure suitable for monochromatic light LED wafer level packaging, the thickness range of the transparent substrate is 50-1000 mu m, the light transmittance is more than 82%, and the refractive index range is 1-2.5.
As an optimized scheme of the device structure suitable for monochromatic light LED wafer level packaging, the lower surface of the transparent substrate can be processed into a micro light-emitting structure, and the micro light-emitting structure is a micro lens array structure or a V-shaped groove structure which is arranged in a criss-cross mode.
As an optimized scheme of the device structure suitable for monochromatic light LED wafer level packaging of the present invention, the thin film flip structure light emitting diode includes:
the surface of the N-type semiconductor growth layer is roughened into the coarsening structure;
the quantum well layer, the P-type semiconductor growth layer and the second reflector are sequentially grown on the other surface, opposite to the coarsening structure, of the N-type semiconductor growth layer from bottom to top;
a P electrode coupled to the second mirror;
an N electrode formed on the second mirror and electrically connected to the N-type semiconductor growth layer through the insulating layer, the second mirror, the P-type semiconductor growth layer, and the quantum well layer;
and the insulating layer is isolated between the N electrode and the second reflecting mirror, the P-type semiconductor growth layer and the quantum well layer.
As an optimized scheme of the device structure suitable for monochromatic light LED wafer level packaging, the coarsening structure on the surface of the N-type semiconductor growth layer is coarsened into a micro-conical coarsening structure, and the surface of the micro-conical coarsening structure is adhered to the upper surface of the transparent substrate.
As an optimized scheme of the device structure suitable for monochromatic light LED wafer level packaging, the second reflecting mirror and the P-type semiconductor growth layer form ohmic contact, and the second reflecting mirror is ITO/Ag, Ni/Ag or ITO/DBR.
The invention is a device structure suitable for monochromatic light LED wafer level packagingAccording to the optimized scheme, the first reflector is a metal reflector, ohmic contact is formed between the first reflector and the N-type semiconductor growth layer, and the first reflector is a Cr/Al reflector; the passivation layer is SiO2SiN, or SiONxOne or more combinations of the P electrode and the N electrode are used for isolating the P electrode and the N electrode from the first reflector, and the thickness of the passivation layer is～3μm。
As an optimized scheme of the device structure suitable for monochromatic light LED wafer level packaging, the side wall of the transparent substrate is easily processed into a trapezoidal structure beneficial to light emitting, and the lower surface of the transparent substrate is easily processed into various microscopic light emitting structures beneficial to light emitting.
As an optimized scheme of the device structure suitable for monochromatic light LED wafer level packaging, the first reflector and the second reflector on the surface of the P-type semiconductor growth layer form a trapezoidal reflecting cup structure.
As described above, the device structure suitable for monochromatic light LED die level packaging of the present invention has the following beneficial effects:
1: the chip adopts a thin film flip chip structure, and can be packaged by adopting a reflow soldering process when a device is packaged, so that packaging bonding wires are reduced, and meanwhile, the contact area of the electrode of the device is increased, and the uniform expansion of current is facilitated;
2: the light emitting surface of the chip is an N-type semiconductor growth layer which is easy to carry out a microcosmic light emitting structure process, so that the light effect of the chip is further improved;
3: the light exit path passes through the active layer, the coarsened N-type semiconductor growth layer and the transparent substrate with the V-shaped light exit structure and high light transmittance (more than 90%), and the refractive indexes of the light exit medium are respectively 2.5, 2.5 and 1.5, so that the performance of the whole device is further improved. The transparent substrate (such as glass) with the refractive index closer to air is adopted, total reflection of the air to light is reduced, the light outgoing probability is increased, meanwhile, the transparent substrate which is easier to machine is adopted as the light outgoing surface, the transparent substrate is processed into a trapezoidal structure or other V-shaped groove structures or micro lens array structures which are beneficial to light outgoing, and the light power of the monochromatic light LED is further improved.
4: the conventional chip has no mirror on the side wall of the chip, so that light is necessarily leaked from the side wall of the chip, and the side light also comprises the side light part of the sapphire substrate due to the existence of the sapphire growth substrate. The side wall of the chip is provided with the reflector, so that the light side leakage of the light-emitting diode after packaging can be obviously reduced.
5: because adopt the higher transparent substrate of luminousness as going out the plain noodles, and adopt the flip-chip structure to avoid the electrode to the sheltering from of light, reduced the sidelight of chip simultaneously, and the chip is except that the light-emitting off-plate, and other positions all have the speculum structure, consequently, light is more concentrated, and the wholeness such as homogeneity and the reliability of device light-emitting efficiency, light-emitting obtains improving.
6: according to the invention, the growth substrate with poor thermal conductivity is stripped, and the heat conduction medium material is reduced, so that the heat dissipation effect of the LED device is better.
7: compared with the LED device which directly encapsulates the LED chip by the colloid, the LED device structure of the invention overcomes the defects of fragile supporting substrate and chip of the latter and greatly enhances the mechanical strength.
Drawings
Fig. 1 is a schematic structural diagram of an LED package device in the prior art.
Fig. 2 is a schematic view of a device structure suitable for monochromatic light LED die level packaging according to the present invention.
Fig. 3 is another schematic diagram of the device structure suitable for monochromatic light LED die-level packaging according to the present invention.
Fig. 4 is a schematic structural diagram of a thin film flip-chip light emitting diode according to an embodiment of the invention.
Fig. 5 is a schematic structural diagram of a device suitable for monochromatic light LED die-level packaging in an embodiment of the present invention.
Fig. 6 is another schematic diagram of a device structure suitable for single-color LED die-level packaging in an embodiment of the present invention.
FIG. 7 is a top view of the structure of the transparent substrate of the present invention.
Fig. 8 is a schematic view of a microscopic light-emitting structure of a V-shaped groove on a light-emitting surface at the bottom of a transparent substrate according to the present invention.
Fig. 9 is another schematic view of the V-groove micro light-emitting structure of the light-emitting surface at the bottom of the transparent substrate according to the present invention.
Description of the element reference numerals
1 transparent substrate
2 first reflecting mirror
3 thin film flip structure light emitting diode
30 epitaxial layer
31N type semiconductor growth layer
301 coarsening structure
32 quantum well layer
33P type semiconductor growth layer
34 second reflector
35P electrode
36N electrode
37 insulating layer
4 adhesive layer
5 passivation layer
6 microcosmic light emitting structure
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to the attached drawings. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
The present embodiment provides a device structure suitable for monochromatic light LED die-level package, as shown in fig. 2, the device structure of die-level package at least includes the following structures: the light emitting diode comprises a transparent substrate 1, a thin film flip-chip structure light emitting diode 3, a first reflecting mirror 2 and a passivation layer 5.
The transparent substrate 1 is an inorganic material or an organic material with high light transmittance, and may be, for example, a quartz glass substrate or a soda glass substrate, or may be another polyester material with high light transmittance or another inorganic material or an organic material. In this embodiment, the transparent substrate 1 is preferably a quartz glass substrate, and since the refractive indexes of glass and air are close, total reflection of light by air can be reduced, and the light emergence probability is increased.
The light transmittance of the transparent substrate 1 is more than 82%, and the refractive index is 1-2.5 (namely, between the refractive indexes of air and a GaN epitaxial layer). Further, the light transmittance of the transparent substrate 1 is preferably more than 90%, and the refractive index is 1.45-1.8.
The thickness of the transparent substrate 1 is in the range of 50 to 1000. mu.m, and may be, for example, 100. mu.m, 300. mu.m, 500. mu.m, 800. mu.m, 1000. mu.m, or the like. In the present embodiment, the thickness of the transparent substrate 1 is preferably 50 to 500 μm.
The thin film flip structure light emitting diode 3 is formed on the upper surface of the transparent substrate 1, and a coarsening structure is arranged on the bonding surface of the thin film flip structure light emitting diode 3 and the transparent substrate 1.
Further, the thin film flip structure light emitting diode 3 may be adhered to the upper surface of the transparent substrate 1 by an adhesive layer 4. The adhesive layer 4 may be silicone, resin, polybenzocyclobutene, or other suitable polyester-based material. In the present embodiment, the adhesive layer 4 is preferably polybenzocyclobutene.
First speculum 2 cover in transparent substrate 1 and 3 sides of film flip-chip structure emitting diode are the n type ohmic contact layer of film flip-chip structure emitting diode 3, through first speculum 2 can prevent that the light that the chip sent from the lateral wall of chip from revealing, combines the speculum at 3 tops of film flip-chip structure emitting diode to the monochromatic emergent light that makes the chip is totally from bottom surface outgoing, improves the light efficiency of device.
The passivation layer 5 covers the surface of the first mirror 2. The passivation layer 5 can increase the adhesion with the first reflector 2, reduce the leakage channel on the side wall of the device and improve the reliability of the device.
The first mirror 2 may be an Ag mirror or a Cr/Al mirror or the like. Of course, other suitable mirror materials are also possible, without limitation. In this embodiment, the first mirror 2 is a very thin Cr/Al mirror.
In this embodiment, as shown in fig. 4, the thin film flip-chip light emitting diode includes: an N-type semiconductor growth layer 31, a quantum well layer 32, a P-type semiconductor growth layer 33, a second mirror 34, a P-electrode 35, an N-electrode 36, and an insulating layer 37.
One surface of the N-type semiconductor growth layer 31 is formed with the coarsening structure 301, and the other surface of the N-type semiconductor growth layer 31 is sequentially grown to form the quantum well layer 32 and the P-type semiconductor growth layer 33. The N-type semiconductor growth layer 31, the quantum well layer 32, and the P-type semiconductor growth layer 33 constitute an epitaxial layer 30 of the thin film flip-chip structure light emitting diode. Different epitaxial layers can emit monochromatic light with different colors, and the material of the epitaxial layer is not limited to GaN, AlGaN and the like in the invention.
The second mirror 34 is formed on the P-type semiconductor growth layer 33. The second mirror 34 may be an ITO/Ag, Ni/Ag, or ITO/DBR mirror, etc.
The P-electrode 35 is bonded to the second mirror 34. The N-electrode 36 is formed on the second mirror 34 and electrically connected to the N-type semiconductor growth layer 31 through the second mirror 34, the P-type semiconductor growth layer 33, and the quantum well layer 32. Thus, the P-type semiconductor growth layer 33 is led out from the P-electrode 35, and the N-type semiconductor growth layer 31 is led out from the N-electrode 36.
The insulating layer 37 is isolated between the N-electrode 36 and the second mirror 34, the P-type semiconductor growth layer 33, and the quantum well layer 32.
The roughened structure 301 (specifically, a micro tapered roughened structure) formed by chemical etching on the surface of the n-type semiconductor growth layer 31 of the thin film flip structure light emitting diode 3 bonded to the upper surface of the transparent substrate 1 can increase the light extraction efficiency from the thin film flip structure light emitting diode structure 3 to the transparent substrate 1, and the lower surface of the transparent substrate 1 further has a micro light extraction structure 6 for increasing the light extraction efficiency from the transparent substrate 1 to air, such as a micro lens array structure or a V-groove structure arranged in a crisscross manner, and the like. Such as the array of micro lens structures with semi-circular micro light-emitting structures at the bottom of the transparent substrate 1 in fig. 2, 3 and 6. The microscopic light extraction structure at the bottom of the transparent substrate 1 shown in fig. 8 and 9 is a V-groove structure.
Specifically, the first reflecting mirror 2 and the passivation layer 5 cover the epitaxial layers and part of the side wall surface on the transparent substrate 1, as shown in fig. 3, the upper surface of the LED die-level package device is covered by the second reflecting mirror 34, and the side wall is covered by the first reflecting mirror 2. First speculum 2 and second speculum 34 form the reflection cup of a trapezoidal form, the light that film flip chip emitting diode 3 launched passes through all follow transparent substrate 1 outgoing behind the reflection of first speculum 2 and second speculum 34 effectively prevents the emergent light edge leakage, improves the light efficiency. The transparent substrate 1 has low light absorption and high light transmittance, and can further improve the light emitting efficiency.
The passivation layer 5 is SiO2SiN, or SiONxFor isolating the P-electrode 35 and the N-electrode 36 from the first mirror 2, the thickness of the passivation layer 5 being～3μm。
The transparent substrate 1 is made of a material easy to process, and the transparent substrate 1 can be processed into various geometric structures beneficial to light extraction by adopting mechanical processing, chemical processing or laser processing. As an example, the transparent substrate 1 is processed into a trapezoidal structure which is easy to emit light as shown in fig. 5 to 7, and in fig. 5 to 7, the sidewalls of the light emitting diode and the sidewalls of the upper portion of the transparent substrate in the flip-chip structure are entirely trapezoidal. The passivation layer 5 and the first mirror 2 then cover the sidewall slopes. Of course, the first reflector 2 may cover the entire sidewall of the transparent substrate 1, i.e., the sidewall of the lower vertical structure of the transparent substrate 1. In addition, as shown in fig. 3 and 6, chamfers can be further processed on the periphery of the lower surface of the transparent substrate 1, so that light can be emitted more conveniently.
It should be noted that the structural details of the thin film flip chip structure light emitting diode 3 in fig. 5 and 6 are not shown, for example, the N electrode needs to be electrically connected to the N-type semiconductor growth layer, and the insulating layer is shown. The structure 3 of the thin film flip chip structure light emitting diode in fig. 5 and 6 is based on fig. 4. In this embodiment, the above LED package device is fabricated using a blue chip die having a chip size of 17mil × 35 mil. Adopting a Labsphere 50cm integrating sphere system, wherein the optical power of the device reaches more than 100mW under 60 mA; meanwhile, the conventional 17mil × 35mil flip chip is subjected to a packaging test, and the optical power of the device is 85 mW. Therefore, compared with the traditional chip, the light power of the LED device is obviously improved.
In summary, the present invention provides a device structure suitable for monochromatic LED die level packaging, where the device structure at least includes: transparent substrate, be formed in flip-chip structure emitting diode on the transparent substrate and cover in proper order in transparent substrate and flip-chip structure emitting diode lateral wall surface's first speculum and passivation layer, the transparent substrate is for processing into the trapezium structure of easy light-emitting, and goes out the plain noodles in bottom and be formed with microlens structure or V type groove structure etc.. The side wall of the device is provided with a reflector structure, the reflector covers the side walls of the chip and the transparent substrate to prevent light emitted by the chip from leaking from the side wall of the chip, and the reflector is combined with the surface of the P-type semiconductor conducting layer in the light emitting diode with the flip structure to enable monochromatic light emitted by the chip to be completely emitted from the surface of the N-type semiconductor layer to enter the transparent substrate and then be emitted to the outside air from the transparent substrate.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (7)
1. A device structure suitable for die-level packaging of monochromatic light LEDs, said packaged device structure comprising at least:
a transparent substrate having an upper surface, a lower surface, and a side surface;
the thin film flip structure light emitting diode is bonded on the upper surface of the transparent substrate, and a coarsening structure is arranged on the bonding surface of the thin film flip structure light emitting diode and the transparent substrate;
the first reflector covers the transparent substrate and the side face of the thin film flip structure light emitting diode;
a passivation layer covering a surface of the first mirror,
wherein, the thin film flip-chip structure light emitting diode includes:
the surface of the N-type semiconductor growth layer is roughened into the roughening structure, wherein the first reflector and the N-type semiconductor growth layer form N-type ohmic contact;
the quantum well layer, the P-type semiconductor growth layer and the second reflector are sequentially grown on the other surface, opposite to the coarsening structure, of the N-type semiconductor growth layer from bottom to top, and the second reflector and the first reflector are interconnected to form a reflector cup;
a P electrode coupled to the second mirror;
an N electrode formed on the second mirror and electrically connected to the N-type semiconductor growth layer through an insulating layer, the second mirror, the P-type semiconductor growth layer, and the quantum well layer;
and the insulating layer is isolated between the N electrode and the second reflecting mirror, the P-type semiconductor growth layer and the quantum well layer.
2. A device structure suitable for a monochromatic light LED die-level package according to claim 1, characterized in that: the thickness range of the transparent substrate is 50-1000 mu m, the light transmittance is more than 82%, and the refractive index range is 1-2.5.
3. A device structure suitable for a monochromatic light LED die-level package according to claim 1, characterized in that: the lower surface of the transparent substrate can be processed into a microscopic light-emitting structure, and the microscopic light-emitting structure is a microscopic lens array structure or a V-shaped groove structure which is arranged in a criss-cross mode.
4. A device structure suitable for a monochromatic light LED die-level package according to claim 1, characterized in that: the coarsening structure on the surface of the N-type semiconductor growth layer is coarsened into a microscopic conical coarsening structure, and the surface of the microscopic conical coarsening structure is adhered to the upper surface of the transparent substrate.
5. A device structure suitable for a monochromatic light LED die-level package according to claim 1, characterized in that: the second reflecting mirror and the P-type semiconductor growth layer form ohmic contact, and the second reflecting mirror is ITO/Ag, Ni/Ag or ITO/DBR.
6. A device structure suitable for a monochromatic light LED die-level package according to claim 1, characterized in that: the side wall of the transparent substrate is easy to process into a trapezoidal structure beneficial to light emitting, and the lower surface of the transparent substrate is easy to process into various microscopic light emitting structures beneficial to light emitting.
7. A device structure suitable for a monochromatic light LED die-level package according to claim 1, characterized in that: the first reflector and the second reflector on the surface of the P-type semiconductor growth layer form a trapezoid-shaped reflector cup structure.
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| CN114300603A (en) * | 2021-12-29 | 2022-04-08 | 惠州视维新技术有限公司 | Light emitting device and preparation method thereof, lamp panel, backlight module and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4123830B2 (en) * | 2002-05-28 | 2008-07-23 | 松下電工株式会社 | LED chip |
| CN101569020A (en) * | 2006-12-21 | 2009-10-28 | 皇家飞利浦电子股份有限公司 | Light-emitting apparatus with shaped wavelength converter |
| CN104953006A (en) * | 2014-03-27 | 2015-09-30 | 株式会社东芝 | Semiconductor light emitting device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4123830B2 (en) * | 2002-05-28 | 2008-07-23 | 松下電工株式会社 | LED chip |
| CN101569020A (en) * | 2006-12-21 | 2009-10-28 | 皇家飞利浦电子股份有限公司 | Light-emitting apparatus with shaped wavelength converter |
| CN104953006A (en) * | 2014-03-27 | 2015-09-30 | 株式会社东芝 | Semiconductor light emitting device |
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