CN111969087A - LED chip based on transparent substrate and preparation method thereof - Google Patents
LED chip based on transparent substrate and preparation method thereof Download PDFInfo
- Publication number
- CN111969087A CN111969087A CN202010881721.3A CN202010881721A CN111969087A CN 111969087 A CN111969087 A CN 111969087A CN 202010881721 A CN202010881721 A CN 202010881721A CN 111969087 A CN111969087 A CN 111969087A
- Authority
- CN
- China
- Prior art keywords
- layer
- electrode
- transparent substrate
- type semiconductor
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 111
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 88
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 55
- 238000003475 lamination Methods 0.000 claims abstract description 52
- 230000000149 penetrating effect Effects 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 351
- 238000000034 method Methods 0.000 claims description 36
- 238000005530 etching Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000003989 dielectric material Substances 0.000 claims description 10
- 238000002310 reflectometry Methods 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000001883 metal evaporation Methods 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 6
- 238000003892 spreading Methods 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 229910002601 GaN Inorganic materials 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides an LED chip based on a transparent substrate and a preparation method thereof, wherein an epitaxial lamination layer is bonded on the surface of the transparent substrate through a bonding layer, and a first extension electrode layer is arranged on the surface of one side of the epitaxial lamination layer, which faces to the bonding layer; the first electrode is deposited in an electrode through hole penetrating through the epitaxial lamination layer and forms electric contact with the first extension electrode layer; the second electrode makes electrical contact with the metal electrode layer. That is, the current can be uniformly spread on both opposite surfaces of the epitaxial lamination, and the current injected into the active region through the first type semiconductor layer and the second type semiconductor layer is vertically injected, which is similar to a vertical structure LED chip, and can effectively improve the current blocking effect of the LED chip; in addition, the structure of the LED chip provided by the application has good compatibility, and the application of the transparent substrate in LED chips with different color systems can be realized.
Description
Technical Field
The invention relates to the field of light emitting diodes, in particular to an LED chip based on a transparent substrate and a preparation method thereof.
Background
Because the growth substrate in the LED epitaxial wafer structure has a strong absorption characteristic on emitted light and the problem that the current spreading capability is poor due to the fact that the top semiconductor layer of the epitaxial layer is thin, the LED chip with the transparent substrate is more and more widely applied; such as GaN-based blue (B), green (G) and Ultraviolet (UV) LED chips with sapphire growth substrates, and GaAs-based red (R), yellow (Y) or Infrared (IR) LED chips with substrates such as gallium phosphide (GaP) or sapphire, because the transparent substrate is a window layer of the LED chip, the transparent substrate has a thick size relative to the LED light emitting layer, a certain proportion of light is emitted from the side of the flip chip transparent substrate, realizing multi-facet light emission, and because the refractive index of the transparent substrate material is generally between that of the LED light emitting material and air, the small refractive index difference between the transparent substrate and air allows the light to have a larger escape cone of the emission angle, and the transparent substrate LED chip is a flip chip or a similar flip chip structure, and the bottom has a mirror structure, which can reflect the light emitted from the light emitting layer to the bottom and can reflect the LED surface, the LED chip having the transparent substrate has a greater light emitting efficiency than the upright-mounted LED chip.
Patent (application No. CN201710743511.6) discloses an AlGaInP-based light emitting diode and a method for manufacturing the same, as shown in the application documents: adopting a transparent substrate, drilling a P electrode through hole penetrating through the epitaxial wafer in the epitaxial layer along the direction vertical to the plane of the epitaxial layer by adopting a through hole technology for the P electrode, so that the main body part of the P electrode is positioned on the surface of the N-type epitaxial layer, and manufacturing the P electrode and the N electrode on the surface of the epitaxial layer, thereby enabling the P electrode and the N electrode to have the same height; the LED chip solves the problems that when the chip is packaged and bonded, the LED chip is easy to incline and the packaging difficulty is increased due to the fact that a larger height difference exists between a P electrode and an N electrode in the existing LED. However, since the current injection in this patent is realized by metal formed after reverse opening, the current is injected through the point-like electrode at the opening, and then the current is expanded through the corresponding semiconductor window layer or the transparent conductive layer; the current spreading effect based on the design is poor, and holes or grooves are required to be drilled as many as possible in the technical scheme in order to further ensure the current injection and spreading of the P-type layer, which is detailed in the top view of the embodiment. However, the LED chip particle surface needs to be formed with many holes, which occupies a large light emitting area, and the insulation between each hole and each through hole needs to be ensured, which inevitably brings complexity and challenges in the manufacturing process, and directly affects the chip reliability.
Meanwhile, for the GaN-based LED chip, the thickness of the P-type (Al) GaN layer on the uppermost layer of the epitaxial structure of the GaN-based LED chip is very thin, usually only dozens of nm to 200nm, the depth from the bottom layer to the P-type (Al) GaN layer is difficult to etch, even if the etching depth can be accurately controlled, the very thin P-type (Al) GaN layer cannot realize good current expansion, even if a transparent conducting layer is prepared on the surface, the conducting layer is generally an ITO material, the thickness of ITO for ensuring the light extraction rate is also controlled, and the current expansion energy is still limited. Therefore, the epitaxial wafer structure of the GaN-based LED chip cannot be applied to its transparent substrate according to the AlGaInP-based red (R), yellow (Y) or Infrared (IR) LED structure described in the above patent.
The present inventors have specifically designed a transparent substrate-based LED chip and a method for fabricating the same, which results therefrom.
Disclosure of Invention
The invention aims to provide an LED chip based on a transparent substrate and a preparation method thereof, and aims to solve the technical problems of poor current expansion effect, complex process and low reliability.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a transparent substrate based LED chip comprising:
a transparent substrate;
the epitaxial lamination is formed on the surface of the transparent substrate through bonding of a bonding layer and at least comprises a first type semiconductor layer, an active region and a second type semiconductor layer which are sequentially stacked along a first direction; an electrode through hole penetrating through the epitaxial lamination layer is formed in the epitaxial lamination layer; the first direction is perpendicular to the transparent substrate and is directed to the epitaxial stacked layer by the transparent substrate;
the metal electrode layer is laminated on one side surface of the second type semiconductor layer, which is far away from the active region;
the first extension electrode layer is arranged on the surface of one side, facing the bonding layer, of the epitaxial lamination layer, and the electrode through hole exposes a local area of the first extension electrode layer;
the insulating layer is arranged on the side wall of the electrode through hole and the surface of one side, away from the second type semiconductor layer, of the metal electrode layer; the insulating layer is provided with a notch exposing part of the surface of the metal electrode layer, and the notch is far away from the electrode through hole;
a first electrode deposited in the electrode through-hole and in electrical contact with the first extended electrode layer;
and the second electrode is electrically contacted with the metal electrode layer through the notch, and the second electrode is far away from the first electrode.
Preferably, a transparent conductive layer is arranged on one side surface of the epitaxial lamination layer facing the bonding layer, the first extension electrode layer is laminated on one side surface of the transparent conductive layer facing away from the epitaxial lamination layer, and the electrode through hole extends to the transparent conductive layer and exposes a local area of the first extension electrode layer; or the transparent conductive layer is laminated on one side surface of the first extension electrode layer, which is away from the epitaxial lamination layer, and the electrode through hole exposes a local area of the first extension electrode layer.
Preferably, the first extension electrode layer at least comprises a central bonding pad and a plurality of extension strips horizontally arranged along the surface of the epitaxial lamination layer; and the electrode through hole exposes a local area of the central bonding pad, and the first electrode is deposited in the electrode through hole and forms electric contact with the central bonding pad.
Preferably, each expansion strip is arranged in a grid shape, an interdigital shape, a rectangular clip shape, an ellipse-like clip shape or an ellipse clip shape.
Preferably, at least one of the first extension electrode layer and the transparent conductive layer forms an ohmic contact with the first type semiconductor layer in contact therewith.
Preferably, the bonding layer comprises a transparent dielectric material.
Preferably, the bonding layer comprises an organic polymer or silicon dioxide.
Preferably, the transparent substrate comprises a patterned transparent substrate or a transparent substrate with slanted sidewalls.
Preferably, the metal electrode layer includes a metal single layer having a high reflectivity, or a multi-layered metal structure having a high reflectivity.
Preferably, the metal electrode layer forms an ohmic contact with the contacted second-type semiconductor layer.
Preferably, the metal electrode layer comprises one or more metal stacks of Ag, Au, Pt, Al, Rh, Ni, Pd, V.
Preferably, the insulating layer comprises a layer of insulating material or a DBR stack made of insulating material.
Preferably, the first type semiconductor layer is a P-type semiconductor layer, and the second type semiconductor layer is an N-type semiconductor layer; or the first type semiconductor layer is an N type semiconductor layer, and the second type semiconductor layer is a P type semiconductor layer.
The invention also provides a preparation method of the LED chip based on the transparent substrate, which comprises the following steps:
step S01, providing a growth substrate;
step S02, laminating an epitaxial lamination on the surface of the growth substrate, wherein the epitaxial lamination comprises a second type semiconductor layer, an active region and a first type semiconductor layer which are sequentially laminated along the growth direction;
step S03, growing a transparent conductive layer on the surface of the first type semiconductor layer;
step S04, depositing a first extension electrode layer on the surface of the transparent conductive layer;
step S05, laminating a transparent dielectric material layer on the surface of the first extension electrode layer;
step S06, providing a transparent substrate, and laminating a transparent medium material layer on the surface of the transparent substrate;
step S07, after the transparent dielectric material layer of the step S05 and the step S06 is respectively polished and surface activated, the transparent substrate and the epitaxial lamination are bonded through a bonding process;
step S08, stripping the growth substrate and exposing the second type semiconductor layer;
step S09, etching the epitaxial lamination and the transparent conducting layer to form an electrode through hole penetrating through the epitaxial lamination and the transparent conducting layer, wherein the electrode through hole exposes a local area of the first extension electrode layer;
step S10, growing a metal electrode layer on the surface of the second type semiconductor layer;
step S11, depositing an insulating layer, wherein the insulating layer is arranged on the side wall of the electrode through hole and the surface of one side of the metal electrode layer, which is far away from the second type semiconductor layer; the insulating layer is provided with a notch which exposes part of the surface of the metal electrode layer, and the notch is far away from the electrode through hole;
step S12, manufacturing a first electrode and a second electrode, wherein the first electrode is deposited in the through electrode hole and forms an electric contact with the first extension electrode layer; the second electrode is in electrical contact with the metal electrode layer through the notch, and the second electrode is arranged far away from the first electrode.
Preferably, the step S04 includes sequentially performing photolithography, metal evaporation and lift-off processes or sequentially performing metal evaporation, photolithography and etching processes, so that the first extension electrode layer has a central pad and a plurality of extension bars horizontally laid along the surface of the epitaxial stacked layer; and the electrode through hole exposes a local area of the central welding disc, and the first electrode is deposited in the electrode through hole and forms electric contact with the central welding disc.
Further, in the above manufacturing method, the sequence of steps S03 and S04 may be changed to allow the transparent conductive layer to be laminated on the surface of the first extended electrode layer, and then step S09 includes: and etching the epitaxial lamination layer to form an electrode through hole penetrating through the epitaxial lamination layer, wherein the electrode through hole exposes a local area of the first extension electrode layer.
According to the technical scheme, the epitaxial lamination is bonded and formed on the surface of the transparent substrate through the bonding layer, and the surface of one side, facing the bonding layer, of the epitaxial lamination is provided with the first extension electrode layer; the first electrode is deposited in an electrode through hole penetrating through the epitaxial lamination layer and forms electric contact with the first extension electrode layer; the second electrode makes electrical contact with the metal electrode layer. That is, the current can be uniformly spread on the two opposite surfaces of the epitaxial lamination layer, and the current injected into the active region through the first type semiconductor layer and the second type semiconductor layer is vertical injection, similar to a vertical structure LED chip, so that the current blocking effect of the LED chip can be effectively improved; meanwhile, based on the structure of the LED chip provided by the application, the first type semiconductor layer (namely the P type semiconductor layer) can be thinned, so that the thickness of the whole LED light-emitting layer is very thin, the magnitude order of light-emitting wavelength is reached, and the light-emitting efficiency of the LED chip is further improved; in addition, the structure of the LED chip provided by the application has good compatibility, can realize the application of the transparent substrate to LED chips with different color systems, ensures the uniform expansion of the current, is not only suitable for AlGaInP-based red light (R), yellow light (Y) or Infrared (IR) LED chips, but also suitable for GaN-based LED chips with thin P-type semiconductor layers; moreover, based on the structure of the LED chip provided by the application, the first electrode and the second electrode are equal in height, and the problems that the LED chip is easy to incline and the packaging difficulty is increased when the chip is packaged and bonded due to the large height difference between the first electrode and the second electrode in the conventional LED chip are solved; secondly, the first electrode and the first extension electrode layer are connected through the least through holes, the first extension electrode layer is utilized to better realize current extension of the first type semiconductor layer, and the reliability of the chip is improved; finally, the LED chip provided by the application is simple in structure and convenient to realize.
Secondly, arranging the first extension electrode layer to comprise a central bonding pad and a plurality of extension strips horizontally laid along the surface of the epitaxial laminated layer; and the electrode through hole exposes a local area of the central bonding pad, and the first electrode is deposited in the electrode through hole and forms electric contact with the central bonding pad. The contact of the first electrode with the first extension electrode layer can be maximally secured.
Then, the arrangement that the transparent substrate comprises a transparent substrate with a plurality of conical bulges or a transparent substrate with an inclined side wall can further improve the light extraction efficiency of the LED chip.
Finally, the metal electrode layer is arranged to be a metal single layer with high reflectivity or a multi-layer metal structure with high reflectivity, so that light reflection can be carried out while current expansion is formed, and the light emitting efficiency is further improved.
According to the technical scheme, the method for preparing the LED chip based on the transparent substrate, provided by the invention, has the beneficial effects that only one reverse hole is needed to be formed after the growth substrate is stripped while the beneficial effects of the LED chip is inverted, and the epitaxial lamination and the transparent conducting layer are directly penetrated by the hole forming process, so that the risks of electrical failure and thermal failure caused by multiple hole forming processes can be reduced; in addition, ohmic contact can be well realized through the process of firstly forming the first extension electrode layer on the surface of the epitaxial lamination layer and then stripping the growth substrate and the electrode through hole; then, before the epitaxial stack and the transparent conductive layer are etched in step S09 to form an electrode through hole penetrating through the epitaxial stack and the transparent conductive layer, the first extension electrode layer is formed on the side of the epitaxial stack close to the growth substrate in step S04, that is, in the process of etching the through hole in step S09, since the metal rate of the first extension electrode layer is very slow in the process of etching the semiconductor layer, a better etching control effect is achieved, etching all the epitaxial stacks to expose the first extension electrode layer can be better achieved, and the process limitation that the etching depth window is too narrow due to the fact that the first type semiconductor layer is too thin is avoided; meanwhile, the preparation method provided by the application is simple and convenient in process and manufacture and convenient for production.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an LED chip based on a transparent substrate according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of another transparent substrate-based LED chip structure provided by the embodiment of the invention;
FIG. 3 is a schematic diagram of a structure of another LED chip based on a transparent substrate according to an embodiment of the present invention;
FIG. 4 is a bottom view of a transparent substrate based LED chip according to an embodiment of the present invention;
fig. 5.1 to 5.11 are schematic structural diagrams corresponding to steps of a method for manufacturing an LED chip based on a transparent substrate according to an embodiment of the present invention;
fig. 6 is a top view of a structure corresponding to step S04 of the method for manufacturing an LED chip based on a transparent substrate according to an embodiment of the present invention;
the symbols in the drawings illustrate that: 1. transparent substrate, 1.1 growth substrate, 2 bonding layer, 2.1 transparent dielectric material layer, 3 first extension electrode layer, 4 transparent conducting layer, 5 epitaxial lamination, 5.1 first type semiconductor layer, 5.2 active region, 5.3 second type semiconductor layer, 5.4 metal electrode layer, 5.5 electrode through hole, 6 insulating layer, 7 first electrode, 8 second electrode.
Detailed Description
In order to make the content of the present invention clearer, the content of the present invention is further explained below with reference to the attached drawings. The invention is not limited to this specific embodiment. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, an LED chip based on a transparent substrate 1 comprises:
a transparent substrate 1;
the epitaxial lamination layer 5 is formed on the surface of the transparent substrate 1 through bonding of the bonding layer 2, and the epitaxial lamination layer 5 at least comprises a first type semiconductor layer 5.1, an active region 5.2 and a second type semiconductor layer 5.3 which are sequentially stacked along a first direction; furthermore, an electrode through hole 5.5 penetrating through the epitaxial lamination 5 is arranged in the epitaxial lamination 5; the first direction is perpendicular to the transparent substrate 1 and directed from the transparent substrate 1 to the epitaxial stack 5;
the metal electrode layer 5.4, the metal electrode layer 5.4 is laminated on the surface of one side, away from the active region 5.2, of the second type semiconductor layer 5.3;
the first extension electrode layer 3 is arranged on the surface of one side, facing the bonding layer 2, of the epitaxial lamination layer 5, and the electrode through hole 5.5 exposes a local area of the first extension electrode layer 3;
the insulating layer 6 is arranged on the side wall of the electrode through hole 5.5 and the surface of one side, away from the second type semiconductor layer 5.3, of the metal electrode layer 5.4; the insulating layer 6 is provided with a gap exposing part of the surface of the metal electrode layer 5.4, and the gap is far away from the electrode through hole 5.5;
a first electrode 7, wherein the first electrode 7 is deposited in the electrode through hole 5.5 and forms an electric contact with the first extension electrode layer 3;
a second electrode 8, the second electrode 8 being in electrical contact with the metal electrode layer 5.4 through the indentation, and the second electrode 8 being arranged remote from the first electrode 7.
Fig. 4 shows a bottom view of the structure of the LED chip based on the transparent substrate according to this embodiment.
It should be noted that the types of the first type semiconductor layer 5.1, the active region 5.2 and the second type semiconductor layer 5.3 of the epitaxial stack 5 may also be unlimited in this embodiment, and may be used to form LED chips of different color systems; for example, the first type semiconductor layer 5.1 may be, but is not limited to, a gallium nitride layer, and correspondingly, the second type semiconductor layer 5.3 may be, but is not limited to, a gallium nitride layer.
In this embodiment, a transparent conductive layer 4 is disposed on a side surface of the epitaxial lamination layer 5 facing the bonding layer 2, the first extension electrode layer 3 is laminated on a side surface of the transparent conductive layer 4 facing away from the epitaxial lamination layer 5, and the electrode through hole 5.5 extends to the transparent conductive layer 4 and exposes a local area of the first extension electrode layer 3; or the transparent conducting layer 4 is laminated on the surface of one side of the first extension electrode layer 3, which is far away from the epitaxial lamination layer 5, and the electrode through hole 5.5 exposes a local area of the first extension electrode layer 3.
In this embodiment, the first extension electrode layer 3 at least includes a central bonding pad and a plurality of extension bars horizontally laid along the surface of the epitaxial stacked layer 5; and the electrode through hole 5.5 exposes a local area of the center pad, the first electrode 7 is deposited in the electrode through hole 5.5 and forms an electrical contact with the center pad.
In this embodiment, at least one of the first extension electrode layer 3 and the transparent conductive layer 4 forms an ohmic contact with the first-type semiconductor layer 5.1 in contact therewith.
It should be noted that the arrangement of the expansion bars of the first expansion electrode layer 3 in the present embodiment may not be limited, and may be, for example, a grid shape, an interdigital shape, a rectangular needle shape, a quasi-elliptical needle shape, or an elliptical needle shape, as long as the basic requirements are satisfied.
In this embodiment, the bonding layer 2 includes a transparent dielectric material.
In the present embodiment, the bonding layer 2 includes, but is not limited to, an organic polymer or silicon dioxide.
In the present embodiment, the transparent substrate 1 includes, but is not limited to, a patterned transparent substrate or a transparent substrate having oblique sidewalls.
Wherein, fig. 2 illustrates that a transparent substrate having a plurality of pyramidal protrusions is applied to the LED chip according to the present invention;
FIG. 3 illustrates the application of a transparent substrate with beveled sidewalls to an LED chip in accordance with the present invention;
in this embodiment, the metal electrode layer 5.4 comprises a single metal layer with high reflectivity, or a multi-layer metal structure with high reflectivity.
In this embodiment, the metal electrode layer 5.4 forms an ohmic contact with the second-type semiconductor layer 5.3
In the present embodiment, the metal electrode layer 5.4 includes one or more metal stacks of Ag, Au, Pt, Al, Rh, Ni, Pd, V.
In this embodiment, the insulating layer 6 comprises a layer of insulating material or a DBR stack made of insulating material.
In this embodiment, the first type semiconductor layer 5.1 is a P-type semiconductor layer, and the second type semiconductor layer 5.3 is an N-type semiconductor layer; or the first type semiconductor layer 5.1 is an N-type semiconductor layer and the second type semiconductor layer is a P-type semiconductor layer.
The embodiment also provides a preparation method of the LED chip based on the transparent substrate 1, which comprises the following steps:
step S01, as shown in fig. 5.1, providing a growth substrate 1.1;
it is worth mentioning that the type of the growth substrate 1.1 is not limited in the present embodiment, and may include growth substrates 1.1 of different color system LED chips, for example, the growth substrate 1.1 may be, but is not limited to, a sapphire substrate, a silicon substrate, gallium phosphide (GaP), and the like.
Step S02, as shown in fig. 5.2, stacking an epitaxial stack 5 on the surface of the growth substrate 1.1, where the epitaxial stack 5 includes a second type semiconductor layer 5.3, an active region 5.2 and a first type semiconductor layer 5.1 stacked in sequence along the growth direction;
it is worth mentioning that the types of the first type semiconductor layer 5.1, the active region 5.2 and the second type semiconductor layer 5.3 of the epitaxial stack 5 may also be unlimited in the present embodiment, for example, the first type semiconductor layer 5.1 may be but is not limited to a gallium nitride layer, and correspondingly, the second type semiconductor layer 5.3 may be but is not limited to a gallium nitride layer;
step S03, as shown in fig. 5.3, a transparent conductive layer 4 is grown on the surface of the first type semiconductor layer 5.1;
step S04, as shown in fig. 5.4, depositing a first extension electrode layer 3 on the surface of the transparent conductive layer 4;
it is to be noted that the specific shape pattern of the first extension electrode layer 3 may be not limited in the present embodiment, and may be, for example, a grid shape, an interdigital shape, a rectangular loop-like needle shape, an ellipse-like loop-like needle shape, an ellipse loop-like needle shape, or an ellipse loop-like needle shape, as long as the above-described basic requirements are satisfied.
Step S05, as shown in fig. 5.5, a transparent dielectric material layer 2.1 is laminated on the surface of the first extension electrode layer 3;
step S06, as shown in fig. 5.6, providing a transparent substrate 1, and laminating a transparent medium material layer 2.1 on the surface of the transparent substrate 1;
step S07, as shown in fig. 5.6, after the transparent dielectric material layer 2.1 of step S05 and step S06 is respectively polished and surface activated, the transparent substrate 1 and the epitaxial stack 5 are bonded by a bonding process;
specifically, the epitaxial stacked layer 5 and the transparent substrate 1 may be bonded by a BCB bonding process, an SOG bonding process, a silicone rubber adhesive bonding process, or an oxide bonding process;
step S08, as shown in fig. 5.7, the growth substrate 1.1 is stripped off and the second type semiconductor layer 5.3 is exposed;
step S09, as shown in fig. 5.8, the epitaxial stacked layer 5 and the transparent conductive layer 4 are etched to form an electrode through hole 5.5 penetrating through the epitaxial stacked layer 5 and the transparent conductive layer 4, and the electrode through hole 5.5 exposes a local region of the first extended electrode layer 3;
step S10, as shown in fig. 5.9, a metal electrode layer 5.4 is grown on the surface of the second type semiconductor layer 5.3;
step S11, as shown in fig. 5.10, depositing an insulating layer 6, where the insulating layer 6 is disposed on the sidewall of the electrode through hole 5.5 and a side surface of the metal electrode layer 5.4 facing away from the second type semiconductor layer 5.3; the insulating layer 6 is provided with a gap exposing the partial surface of the metal electrode layer 5.4, and the gap is far away from the electrode through hole 5.5;
step S12, as shown in fig. 5.11, fabricating a first electrode 7 and a second electrode 8, wherein the first electrode 7 is deposited in the electrode through hole 5.5 and forms an electrical contact with the first extension electrode layer 3; the second electrode 8 is in electrical contact with the metal electrode layer 5.4 through the indentation, and the second electrode 8 is arranged remote from the first electrode 7.
In this embodiment, step S04 includes sequentially performing photolithography, metal evaporation and stripping processes or sequentially performing metal evaporation, photolithography and etching processes to make the first extension electrode layer 3 have a central pad and a plurality of extension bars horizontally laid along the surface of the epitaxial stack 5; and the electrode through hole 5.5 exposes a local area of the central pad, the first electrode 7 is deposited in the electrode through hole 5.5 and forms an electrical contact with the central pad, and the top view of the corresponding structure is shown in fig. 6.
Further, in the preparation method of this embodiment, the sequence of the step S03 and the step S04 may be changed, so that the transparent conductive layer is laminated on the surface of the first extended electrode layer, and then the step S09 includes: and etching the epitaxial lamination layer to form an electrode through hole penetrating through the epitaxial lamination layer, wherein the electrode through hole exposes a local area of the first extension electrode layer.
As can be seen from the above technical solutions, in the LED chip based on the transparent substrate 1 provided in this embodiment, the epitaxial stack 5 is bonded to the surface of the transparent substrate 1 through the bonding layer 2, and the first extension electrode layer 3 is disposed on the surface of the epitaxial stack 5 facing the bonding layer 2; the first electrode 7 is deposited in the electrode through hole 5.5 penetrating the epitaxial stack 5 and forms an electrical contact with the first extension electrode layer 3; the second electrode 8 is in electrical contact with the metal electrode layer 5.4. That is, the current can be uniformly spread on both the two opposite surfaces of the epitaxial lamination layer 5, and the current injected into the active region 5.2 through the first type semiconductor layer 5.1 and the second type semiconductor layer 5.3 is vertical injection, which is similar to a vertical structure LED chip, and can effectively improve the current blocking effect of the LED chip; meanwhile, based on the structure of the LED chip provided in this embodiment, the first type semiconductor layer 5.1 (i.e., the P type semiconductor layer) can be thinned, so that the thickness of the whole LED light-emitting layer is very thin, the magnitude of the light-emitting wavelength is reached, and the light-emitting efficiency of the LED chip is further improved; in addition, the structure of the LED chip provided in this embodiment has good compatibility, can realize the application of the transparent substrate 1 to LED chips of different color systems, and ensures the uniform expansion of the current thereof, and is suitable for not only AlGaInP-based red (R), yellow (Y) or Infrared (IR) LED chips, but also GaN-based LED chips with a thin P-type semiconductor layer; moreover, based on the structure of the LED chip provided in this embodiment, the first electrode 7 and the second electrode 8 have the same height, which solves the problem that the LED chip is prone to roll and increases the packaging difficulty when the chip is packaged and bonded due to the large height difference between the first electrode 7 and the second electrode 8 in the conventional LED chip; secondly, the first electrode and the first extension electrode layer are connected through the least through holes, the current extension of the first type semiconductor layer is well realized by the first extension electrode layer, and the reliability of the chip is improved; finally, the LED chip provided by the embodiment is simple in structure and convenient to realize.
Secondly, arranging a first extension electrode layer 3 comprising a central bonding pad and a plurality of extension strips horizontally laid along the surface of the epitaxial lamination layer 5; and the electrode through hole 5.5 exposes a local area of the center pad, the first electrode 7 is deposited in the electrode through hole 5.5 and forms an electrical contact with the center pad. The contact of the first electrode 7 with the first extension electrode layer 3 can be maximally secured.
Then, by the arrangement that the transparent substrate 1 includes the transparent substrate 1 having a plurality of pyramidal protrusions or the transparent substrate 1 having an inclined sidewall, the light extraction efficiency of the LED chip can be further improved.
Finally, by arranging the metal electrode layer 5.4 as a single metal layer with high reflectivity or a multi-layer metal structure with high reflectivity, light reflection can be performed while current spreading is formed, and the light emitting efficiency is further improved.
According to the technical scheme, the method for manufacturing the LED chip based on the transparent substrate 1, provided by the embodiment, has the beneficial effects that while the beneficial effects of the flip LED chip are realized, only one reverse hole needs to be formed after the growth substrate 1.1 is stripped, and the epitaxial lamination 5 and the transparent conductive layer 4 are directly punched through by the hole forming process, so that the risks of electrical failure and thermal failure caused by multiple hole forming processes can be reduced; in addition, ohmic contact can be well realized through the process of forming the first extension electrode layer 3 on the surface of the epitaxial lamination layer 5 and then stripping the growth substrate 1.1 and the electrode through hole 5.5; then, before the epitaxial stacked layer and the transparent conductive layer are etched in step S09 to form an electrode through hole penetrating through the epitaxial stacked layer and the transparent conductive layer, the formation of the first extension electrode layer on the side of the epitaxial stacked layer close to the growth substrate is already completed in step S04, that is, in the etching process of the through hole in step S09, since the metal rate of the first extension electrode layer is very slow in the process of etching the semiconductor layer, a good etching control effect is achieved, etching of all the epitaxial stacked layers to expose the first extension electrode layer can be well achieved, and the process limitation that the etching depth window is too narrow due to the fact that the first type semiconductor layer is too thin is avoided; meanwhile, the preparation method provided by the embodiment is simple and convenient in process and manufacture and convenient for production.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (12)
1. A transparent substrate based LED chip, comprising:
a transparent substrate;
the epitaxial lamination is formed on the surface of the transparent substrate through bonding of a bonding layer and at least comprises a first type semiconductor layer, an active region and a second type semiconductor layer which are sequentially stacked along a first direction; an electrode through hole penetrating through the epitaxial lamination layer is formed in the epitaxial lamination layer; the first direction is perpendicular to the transparent substrate and is directed to the epitaxial stacked layer by the transparent substrate;
the metal electrode layer is laminated on one side surface, away from the active region, of the second type semiconductor layer;
the first extension electrode layer is arranged on the surface of one side, facing the bonding layer, of the epitaxial lamination, and the electrode through hole exposes a local area of the first extension electrode layer;
the insulating layer is arranged on the side wall of the electrode through hole and the surface of one side, away from the second type semiconductor layer, of the metal electrode layer; the insulating layer is provided with a notch exposing part of the surface of the metal electrode layer, and the notch is far away from the electrode through hole;
a first electrode deposited in the electrode through hole and making electrical contact with the first extended electrode layer;
and the second electrode is electrically contacted with the metal electrode layer through the notch, and the second electrode is far away from the first electrode.
2. The transparent substrate-based LED chip according to claim 1, wherein a transparent conductive layer is disposed on a surface of the epitaxial stack facing the bonding layer, the first extended electrode layer is stacked on a surface of the transparent conductive layer facing away from the epitaxial stack, and the electrode through hole extends to the transparent conductive layer and exposes a local region of the first extended electrode layer; or the transparent conductive layer is laminated on the surface of one side, away from the epitaxial lamination layer, of the first extension electrode layer, and the electrode through hole exposes a local area of the first extension electrode layer.
3. The transparent substrate-based LED chip of claim 1, wherein said first spreading electrode layer comprises at least a central bonding pad and a plurality of spreading bars horizontally disposed along the surface of said epitaxial stack; and the electrode through hole exposes a local area of the central bonding pad, and the first electrode is deposited in the electrode through hole and forms electric contact with the central bonding pad.
4. The transparent substrate-based LED chip of claim 1, wherein said bonding layer comprises a transparent dielectric material.
5. The transparent substrate-based LED chip of claim 4, wherein said transparent substrate comprises a patterned transparent substrate or a transparent substrate with beveled sidewalls.
6. The transparent substrate-based LED chip of claim 1, wherein said metal electrode layer comprises a high reflectivity metal single layer or a multi-layer metal structure with high reflectivity.
7. The transparent substrate-based LED chip of claim 6, wherein said metal electrode layer comprises one or more metal stacks of Ag, Au, Pt, Al, Rh, Ni, Pd, V.
8. The transparent substrate-based LED chip of claim 1, wherein the insulating layer comprises a layer of insulating material or a DBR stack made of insulating material.
9. The transparent substrate-based LED chip of claim 1, wherein the first type semiconductor layer is a P-type semiconductor layer and the second type semiconductor layer is an N-type semiconductor layer; or the first type semiconductor layer is an N type semiconductor layer, and the second type semiconductor layer is a P type semiconductor layer.
10. A preparation method of an LED chip based on a transparent substrate is characterized by comprising the following steps:
step S01, providing a growth substrate;
step S02, laminating an epitaxial lamination on the surface of the growth substrate, wherein the epitaxial lamination comprises a second type semiconductor layer, an active region and a first type semiconductor layer which are sequentially stacked along the growth direction;
step S03, growing a transparent conductive layer on the surface of the first type semiconductor layer;
step S04, depositing a first extension electrode layer on the surface of the transparent conductive layer;
step S05, laminating a transparent dielectric material layer on the surface of the first extension electrode layer;
step S06, providing a transparent substrate, and laminating a transparent medium material layer on the surface of the transparent substrate;
step S07, after the transparent dielectric material layer of the step S05 and the step S06 is respectively polished and surface activated, the transparent substrate and the epitaxial lamination are bonded through a bonding process;
step S08, stripping the growth substrate and exposing the second type semiconductor layer;
step S09, etching the epitaxial lamination and the transparent conducting layer to form an electrode through hole penetrating through the epitaxial lamination and the transparent conducting layer, wherein the electrode through hole exposes a local area of the first extension electrode layer;
step S10, growing a metal electrode layer on the surface of the second type semiconductor layer;
step S11, depositing an insulating layer, wherein the insulating layer is arranged on the side wall of the electrode through hole and the surface of one side of the metal electrode layer, which is far away from the second type semiconductor layer; the insulating layer is provided with a notch exposing part of the surface of the metal electrode layer, and the notch is far away from the electrode through hole;
step S12, manufacturing a first electrode and a second electrode, wherein the first electrode is deposited in the electrode through hole and forms electric contact with the first extension electrode layer; the second electrode forms an electrical contact with the metal electrode layer through the notch, and the second electrode is arranged away from the first electrode.
11. The method according to claim 10, wherein the step S04 includes sequentially performing photolithography, metal evaporation and lift-off processes or sequentially performing metal evaporation, photolithography, etching or lift-off processes, so that the first extension electrode layer has a corresponding central pad and a plurality of extension bars horizontally laid along the surface of the epitaxial stacked layer; and the electrode through hole exposes a local area of the central bonding pad, and the first electrode is deposited in the electrode through hole and forms electric contact with the central bonding pad.
12. The method for preparing an LED chip based on a transparent substrate according to claim 10 or 11, wherein the sequence of the steps S03 and S04 is changed to allow the transparent conductive layer to be laminated on the surface of the first extended electrode layer, and then the step S09 includes: and etching the epitaxial lamination layer to form an electrode through hole penetrating through the epitaxial lamination layer, wherein the electrode through hole exposes a local area of the first extension electrode layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010881721.3A CN111969087A (en) | 2020-08-28 | 2020-08-28 | LED chip based on transparent substrate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010881721.3A CN111969087A (en) | 2020-08-28 | 2020-08-28 | LED chip based on transparent substrate and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111969087A true CN111969087A (en) | 2020-11-20 |
Family
ID=73401212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010881721.3A Pending CN111969087A (en) | 2020-08-28 | 2020-08-28 | LED chip based on transparent substrate and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111969087A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112864291A (en) * | 2021-01-13 | 2021-05-28 | 广州市艾佛光通科技有限公司 | Embedded LED chip and preparation method thereof |
| CN113363365A (en) * | 2021-08-09 | 2021-09-07 | 南昌凯捷半导体科技有限公司 | Multi-current-channel flip AlGaInPmini-LED chip and preparation method thereof |
| CN113594326A (en) * | 2021-07-29 | 2021-11-02 | 厦门三安光电有限公司 | Light emitting diode, light emitting module and display device |
| CN113594322A (en) * | 2021-09-30 | 2021-11-02 | 华灿光电(苏州）有限公司 | Red light diode chip for improving electrode adhesion quality and preparation method thereof |
| CN114388675A (en) * | 2021-12-21 | 2022-04-22 | 南昌大学 | GaN-based micro LED chip and preparation method thereof |
| CN115207182A (en) * | 2022-09-15 | 2022-10-18 | 南昌凯捷半导体科技有限公司 | Red light mini LED with P-surface thin film conducting layer and preparation method thereof |
| WO2023124392A1 (en) * | 2021-12-29 | 2023-07-06 | 惠州视维新技术有限公司 | Light-emitting device and manufacturing method therefor, lamp board, backlight module, and display device |
Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040090179A1 (en) * | 2002-11-08 | 2004-05-13 | United Epitaxy Co. Ltd. | Light emitting diode and method of making the same |
| US20070090377A1 (en) * | 2005-10-20 | 2007-04-26 | Epistar Corporation | Light emitting device and method of forming the same |
| US20080230791A1 (en) * | 2007-03-19 | 2008-09-25 | Epistar Corporation | Optoelectronic device |
| US20090152583A1 (en) * | 2007-12-14 | 2009-06-18 | Chao-Min Chen | Light-emitting diode device and manufacturing method thereof |
| CN102148322A (en) * | 2010-02-08 | 2011-08-10 | Lg伊诺特有限公司 | Light emitting device and light emitting device package having the same |
| US9059339B1 (en) * | 2014-02-11 | 2015-06-16 | International Business Machines Corporation | Light emitting diodes with via contact scheme |
| CN105742469A (en) * | 2016-04-15 | 2016-07-06 | 深圳大道半导体有限公司 | Semiconductor light emitting chip |
| CN105762252A (en) * | 2014-12-16 | 2016-07-13 | 晶宇光电（厦门）有限公司 | LED chip structure and manufacturing method thereof |
| CN106328798A (en) * | 2015-06-15 | 2017-01-11 | 晶宇光电（厦门）有限公司 | Light emitting diode chip |
| US20170194541A1 (en) * | 2014-11-18 | 2017-07-06 | PlayNitride Inc. | Light emitting device |
| CN107546303A (en) * | 2017-08-25 | 2018-01-05 | 扬州乾照光电有限公司 | A kind of AlGaInP based light-emitting diodes and its manufacture method |
| TW201832356A (en) * | 2012-08-06 | 2018-09-01 | 晶元光電股份有限公司 | Light-emitting diode |
| CN108511569A (en) * | 2018-03-28 | 2018-09-07 | 厦门乾照光电股份有限公司 | A kind of LED chip and production method |
| DE102017111277A1 (en) * | 2017-05-23 | 2018-11-29 | Osram Opto Semiconductors Gmbh | Semiconductor device and method for manufacturing a semiconductor device |
| CN109659414A (en) * | 2018-11-22 | 2019-04-19 | 华灿光电（浙江）有限公司 | A kind of flip LED chips and preparation method thereof |
| CN110993756A (en) * | 2019-12-18 | 2020-04-10 | 东莞市中晶半导体科技有限公司 | LED chip and manufacturing method thereof |
| CN111211202A (en) * | 2020-03-04 | 2020-05-29 | 厦门乾照半导体科技有限公司 | Modified gold-tin electrode, LED chip and preparation method thereof |
| CN111244242A (en) * | 2020-03-06 | 2020-06-05 | 厦门乾照半导体科技有限公司 | High-reflection LED flip chip, manufacturing method thereof and packaging structure |
| CN111508939A (en) * | 2017-12-05 | 2020-08-07 | 首尔伟傲世有限公司 | Light emitting device and display apparatus |
-
2020
- 2020-08-28 CN CN202010881721.3A patent/CN111969087A/en active Pending
Patent Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040090179A1 (en) * | 2002-11-08 | 2004-05-13 | United Epitaxy Co. Ltd. | Light emitting diode and method of making the same |
| US20070090377A1 (en) * | 2005-10-20 | 2007-04-26 | Epistar Corporation | Light emitting device and method of forming the same |
| US20080230791A1 (en) * | 2007-03-19 | 2008-09-25 | Epistar Corporation | Optoelectronic device |
| US20090152583A1 (en) * | 2007-12-14 | 2009-06-18 | Chao-Min Chen | Light-emitting diode device and manufacturing method thereof |
| CN102148322A (en) * | 2010-02-08 | 2011-08-10 | Lg伊诺特有限公司 | Light emitting device and light emitting device package having the same |
| TW201832356A (en) * | 2012-08-06 | 2018-09-01 | 晶元光電股份有限公司 | Light-emitting diode |
| US9059339B1 (en) * | 2014-02-11 | 2015-06-16 | International Business Machines Corporation | Light emitting diodes with via contact scheme |
| US20170194541A1 (en) * | 2014-11-18 | 2017-07-06 | PlayNitride Inc. | Light emitting device |
| CN105762252A (en) * | 2014-12-16 | 2016-07-13 | 晶宇光电（厦门）有限公司 | LED chip structure and manufacturing method thereof |
| CN106328798A (en) * | 2015-06-15 | 2017-01-11 | 晶宇光电（厦门）有限公司 | Light emitting diode chip |
| CN105742469A (en) * | 2016-04-15 | 2016-07-06 | 深圳大道半导体有限公司 | Semiconductor light emitting chip |
| DE102017111277A1 (en) * | 2017-05-23 | 2018-11-29 | Osram Opto Semiconductors Gmbh | Semiconductor device and method for manufacturing a semiconductor device |
| CN107546303A (en) * | 2017-08-25 | 2018-01-05 | 扬州乾照光电有限公司 | A kind of AlGaInP based light-emitting diodes and its manufacture method |
| CN111508939A (en) * | 2017-12-05 | 2020-08-07 | 首尔伟傲世有限公司 | Light emitting device and display apparatus |
| CN108511569A (en) * | 2018-03-28 | 2018-09-07 | 厦门乾照光电股份有限公司 | A kind of LED chip and production method |
| CN109659414A (en) * | 2018-11-22 | 2019-04-19 | 华灿光电（浙江）有限公司 | A kind of flip LED chips and preparation method thereof |
| CN110993756A (en) * | 2019-12-18 | 2020-04-10 | 东莞市中晶半导体科技有限公司 | LED chip and manufacturing method thereof |
| CN111211202A (en) * | 2020-03-04 | 2020-05-29 | 厦门乾照半导体科技有限公司 | Modified gold-tin electrode, LED chip and preparation method thereof |
| CN111244242A (en) * | 2020-03-06 | 2020-06-05 | 厦门乾照半导体科技有限公司 | High-reflection LED flip chip, manufacturing method thereof and packaging structure |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112864291A (en) * | 2021-01-13 | 2021-05-28 | 广州市艾佛光通科技有限公司 | Embedded LED chip and preparation method thereof |
| CN113594326A (en) * | 2021-07-29 | 2021-11-02 | 厦门三安光电有限公司 | Light emitting diode, light emitting module and display device |
| CN113363365A (en) * | 2021-08-09 | 2021-09-07 | 南昌凯捷半导体科技有限公司 | Multi-current-channel flip AlGaInPmini-LED chip and preparation method thereof |
| CN113594322A (en) * | 2021-09-30 | 2021-11-02 | 华灿光电(苏州）有限公司 | Red light diode chip for improving electrode adhesion quality and preparation method thereof |
| CN114388675A (en) * | 2021-12-21 | 2022-04-22 | 南昌大学 | GaN-based micro LED chip and preparation method thereof |
| CN114388675B (en) * | 2021-12-21 | 2024-04-16 | 南昌大学 | GaN-based miniature LED chip and preparation method thereof |
| WO2023124392A1 (en) * | 2021-12-29 | 2023-07-06 | 惠州视维新技术有限公司 | Light-emitting device and manufacturing method therefor, lamp board, backlight module, and display device |
| CN115207182A (en) * | 2022-09-15 | 2022-10-18 | 南昌凯捷半导体科技有限公司 | Red light mini LED with P-surface thin film conducting layer and preparation method thereof |
| CN115207182B (en) * | 2022-09-15 | 2022-12-13 | 南昌凯捷半导体科技有限公司 | Red light mini LED with P-side thin film conducting layer and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111969087A (en) | LED chip based on transparent substrate and preparation method thereof | |
| KR101252032B1 (en) | Semiconductor light emitting device and method of manufacturing the same | |
| CN102804417B (en) | Contact for light emitting semiconductor device | |
| US9059015B2 (en) | Light emitting device and method of fabricating the same | |
| KR100992776B1 (en) | Semiconductor light emitting device and fabrication method thereof | |
| KR101025980B1 (en) | Method of manufacturing nitride-based semiconductor light emitting device | |
| CN105591002A (en) | LED flip chip with reflection layer and preparation method thereof | |
| EP2423987A2 (en) | Light emitting device, light emitting device package, and light unit | |
| CN111710767A (en) | LED chip based on graphical reflector and manufacturing method thereof | |
| CN105810790A (en) | Semiconductor light emitting element and method of manufacturing the same | |
| CN111462651A (en) | Light-emitting display substrate for assembling surface-mounted micro L ED fluid and preparation method | |
| JP2015177087A (en) | Semiconductor light emitting device and manufacturing method for the same | |
| US9698305B2 (en) | High voltage LED flip chip | |
| CN114824026A (en) | Light emitting diode chip and light emitting device | |
| CN105810781A (en) | Semiconductor light-emitting element, light emitting device, and method of manufacturing semiconductor light-emitting element | |
| KR20140083357A (en) | Method for separating substrate and methos for fabricating semiconductor device using the same | |
| CN115863326B (en) | Micro light-emitting diode display device and preparation method thereof | |
| CN114530534A (en) | LED chip and preparation method thereof | |
| US8507938B2 (en) | Light-emitting diode structure and method for manufacturing the same | |
| CN112750931B (en) | Micro light-emitting diode, micro light-emitting diode array substrate and manufacturing method thereof | |
| KR20130015770A (en) | A light emitting diode chip and method for fabricating the same | |
| CN111477726A (en) | Planar surface mount micro L ED for fluid assembly and preparation method thereof | |
| CN211578783U (en) | LED chip structure | |
| US8878218B2 (en) | Semiconductor light-emitting device and method for manufacturing the same | |
| CN218351493U (en) | LED chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201120 |
|
| RJ01 | Rejection of invention patent application after publication |