CN115863326B - Micro light-emitting diode display device and preparation method thereof - Google Patents
Micro light-emitting diode display device and preparation method thereof Download PDFInfo
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- CN115863326B CN115863326B CN202310077266.5A CN202310077266A CN115863326B CN 115863326 B CN115863326 B CN 115863326B CN 202310077266 A CN202310077266 A CN 202310077266A CN 115863326 B CN115863326 B CN 115863326B
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Abstract
The invention discloses a micro light emitting diode display device and a preparation method thereof, wherein the micro light emitting diode display device comprises: a substrate having contacts; the reflecting grating layer is provided with a plurality of groups of grooves which are arrayed; a conductive bonding layer located between the substrate and the reflective grating layer; the insulating layer covers the surface of the reflecting grating layer and the side wall of the groove; the LED units are positioned in the grooves; the contact is provided with a through hole, and the contact is electrically connected with the LED unit through the through hole so that the LED unit is driven independently. According to the method, the LED unit is prepared through selective epitaxy, so that the damage to the side wall of the LED unit caused by dry etching or ion implantation can be effectively avoided, and meanwhile, a small-size table top is easier to realize, and the luminous efficiency of the device is improved; meanwhile, the reflecting grating layer is positioned between the LED units, so that light crosstalk between adjacent LED units is avoided, and the light emitting efficiency of the display device is improved.
Description
Technical Field
The invention belongs to the technical field of Micro-LED manufacturing, and particularly relates to a Micro light-emitting diode display device and a preparation method thereof.
Background
Micro light emitting diode display devices, also called Micro-LEDs, are widely used in near-eye head-mounted displays and large area self-luminous displays because each LED unit can self-emit light. Compared with the traditional display device, the Micro-LED has the advantages of high resolution, high contrast, high luminous efficiency, long service life and the like, but as the size of the Micro-LED is reduced, the peak external quantum efficiency is reduced. The main reason for the decrease of external quantum efficiency is that the side wall damage is caused by dry etching or ion implantation adopted in the manufacturing process of the LED unit, the surface volume ratio of the LED unit increases with the decrease of the size of the LED unit, the influence of the side wall damage on the luminous efficiency of the device also increases gradually, meanwhile, the light crosstalk phenomenon exists between the adjacent LED units, and the problem becomes more serious with the further reduction of the LED units.
Disclosure of Invention
The invention aims to: the invention aims to provide a miniature light-emitting diode display device, which improves the luminous efficiency of the device by epitaxially growing LED units between reflecting grating layers; another object of the present invention is to provide a method for manufacturing the micro light emitting diode display device.
The technical scheme is as follows: in order to achieve the above object, the present invention provides a micro light emitting diode display device comprising:
The circuit comprises a substrate, a first circuit and a second circuit, wherein the substrate comprises a driving circuit and a plurality of contacts electrically connected with the driving circuit;
a reflective grating layer on the substrate; the reflecting grating layer is provided with a plurality of grooves which are arranged in an array manner, and the contacts are positioned between the adjacent grooves;
a conductive bonding layer between the substrate and the reflective grating layer;
an insulating layer covering on one surface of the reflective grating layer and on the side wall of the groove to insulate the reflective grating layer from the conductive bonding layer;
the LED units are positioned in the grooves and are electrically connected with the conductive bonding layer; the contact is provided with a through hole penetrating through the reflecting grating layer, the insulating layer and the conductive bonding layer, and the contact is electrically connected with the corresponding LED unit through the through hole so that the LED unit is driven independently.
In some embodiments, further comprising:
a passivation layer and an electrode layer, wherein the passivation layer covers the other surface of the reflecting grating layer and the inner wall of the through hole to electrically isolate the electrode layer from the reflecting grating layer, the insulating layer and the conductive bonding layer, and a first opening and a second opening are arranged on the passivation layer at positions corresponding to the LED unit and the contact; the electrode layer is electrically connected with the corresponding LED unit and the corresponding contact through the first opening and the second opening respectively.
In some embodiments, further comprising:
and the blocking layer is positioned between the reflecting grating layer and the insulating layer to block the migration and diffusion of the material of the reflecting grating layer into the LED unit.
In some embodiments, the via extends through the barrier layer, and the passivation layer covers a side of the barrier layer adjacent to the via.
In some embodiments, the LED unit is formed within the recess by selective epitaxial growth, the LED unit including a first doped semiconductor layer, a second doped semiconductor layer, and an active layer therebetween.
In some embodiments, the spacing between the LED units is 1-10 μm; the LED unit is 1-10 mu m in size.
In some embodiments, the ratio of the thickness of the reflective grille layer to the thickness of the LED unit is (0.9-1.1): 1.
In some embodiments, the thickness of the reflective grating layer (12) is 720-1650 nm; the thickness of the LED unit is 800-1500 nm.
In some embodiments, the thickness of the insulating layer is 20-40 nm; the thickness of the barrier layer is 2-5 nm; the thickness of the first doping type semiconductor layer is 100-200 nm; the thickness of the second doping type semiconductor layer is 600-1000 nm; the thickness of the active layer is 100-300 nm.
In some embodiments, the material of the reflective grating layer is selected from at least one of Ag, al, au.
In some embodiments, the material of the barrier layer is selected from at least one of Ni, tiW, pt, cu.
In some embodiments, the material of the insulating layer is selected from SiN x 、SiO 2 At least one of (a) and (b); the first doped semiconductor layer is an n-type semiconductor layer, and the second doped semiconductor layer is a p-type semiconductor layer.
In some embodiments, the substrate is a silicon-based CMOS drive board or a thin film field effect transistor drive board.
In some embodiments, the present application further provides a method for manufacturing a micro light emitting diode display device, including:
providing a substrate, wherein the substrate comprises a driving circuit and a plurality of contacts electrically connected with the driving circuit;
providing a substrate, and forming a seed layer on the substrate;
forming a reflecting grating layer on the seed layer, and patterning the reflecting grating layer to enable the reflecting grating layer to be provided with a plurality of grooves which are arranged in an array and expose the seed layer, wherein the contacts are positioned between the adjacent grooves;
forming an insulating layer, wherein the insulating layer covers one surface of the reflecting grating layer and the side wall of the groove;
Forming a plurality of LED units, wherein the LED units are formed in the corresponding grooves;
bonding the substrate and the substrate through a conductive bonding layer, and removing the substrate and the seed layer;
and forming a plurality of through holes, wherein the through holes penetrate through the reflecting grating layer, the insulating layer and the conductive bonding layer and expose the corresponding contacts, and the contacts are electrically connected with the LED units through the through holes so that the LED units are driven independently.
In some embodiments, the step of electrically connecting the contact with the LED unit through the through hole so that the LED unit is driven alone further comprises:
forming a passivation layer and an electrode layer, the passivation layer covering the other surface of the reflective grating layer and the inner wall of the via to electrically isolate the electrode layer from the reflective grating layer, the insulating layer and the conductive bonding layer;
providing a first opening and a second opening on the passivation layer at positions corresponding to the LED unit and the contact; the electrode layer is electrically connected with the LED unit and the contact through the first opening and the second opening respectively.
In some embodiments, prior to the step of providing the insulating layer, further comprising:
A barrier layer is provided, the barrier layer being located between the reflective grating layer and the insulating layer.
In some embodiments, the LED unit is formed within the recess by selective epitaxial growth, the LED unit including a first doped semiconductor layer, a second doped semiconductor layer, and an active layer therebetween.
In some embodiments, the material of the reflective grating layer is selected from at least one of Ag, al, au; and/or the number of the groups of groups,
the material of the barrier layer is at least one selected from Ni, tiW, pt, cu; and/or the number of the groups of groups,
the material of the insulating layer is selected from SiN x 、SiO 2 At least one of (a) and (b); and/or the number of the groups of groups,
the material of the seed layer is selected from at least one of GaN, alGaN, alN, inN, inGaN, gaP, alInGaP, alGaAs; and/or the number of the groups of groups,
the first doped semiconductor layer is an n-type semiconductor layer, and the second doped semiconductor layer is a p-type semiconductor layer.
In some embodiments, the step of forming the via includes:
etching the reflecting grating layer, the insulating layer and the conductive bonding layer in sequence to form the through hole; wherein, the reflecting grating layer and the conductive bonding layer are etched by plasma or ion beam; and the insulating layer is etched by adopting reactive ions.
The beneficial effects are that: compared with the prior art, the miniature light emitting diode display device of this application includes: the substrate comprises a driving circuit and a plurality of contacts electrically connected with the driving circuit; a reflective grating layer on the substrate; the reflecting grating layer is provided with a plurality of grooves which are arrayed, and the contacts are positioned between the adjacent grooves; a conductive bonding layer between the substrate and the reflective grating layer; the insulating layer covers one surface of the reflecting grating layer and the side wall of the groove to insulate the reflecting grating layer from the conductive bonding layer; the LED units are positioned in the grooves and are electrically connected with the conductive bonding layer; the contact is provided with a through hole penetrating through the reflecting grating layer, the insulating layer and the conductive bonding layer, and the contact is electrically connected with the corresponding LED unit through the through hole so that the LED unit is driven independently. The LED units are completely isolated by the reflecting grating layer, and when the LED units are transferred to the substrate or after the LED units are transferred, the completely isolated LED units are filled into a two-dimensional plane by the reflecting grating layer, so that the LED units are not easy to fall off from the substrate; meanwhile, the reflecting grating layer is positioned between the LED units, so that light crosstalk between adjacent LED units is avoided, and the light emitting efficiency of the display device is improved.
The preparation method of the miniature light-emitting diode display device comprises the following steps: providing a substrate, wherein the substrate comprises a driving circuit and a plurality of contacts electrically connected with the driving circuit; providing a substrate, and forming a seed layer on the substrate; forming a reflecting grating layer on the seed layer, and patterning the reflecting grating layer to enable the reflecting grating layer to be provided with a plurality of grooves which are arranged in an array and expose the seed layer, wherein contacts are positioned between the adjacent grooves; forming an insulating layer, wherein the insulating layer covers one surface of the reflecting grating layer and the side wall of the groove; forming a plurality of LED units, wherein the LED units are formed in the corresponding grooves; bonding the substrate and the substrate through the conductive bonding layer, and removing the substrate and the seed layer; and forming a plurality of through holes, wherein the through holes penetrate through the reflecting grating layer, the insulating layer and the conductive bonding layer and expose corresponding contacts, and the contacts are electrically connected with the LED units through the through holes so that the LED units are driven independently. According to the method, the LED units are formed on the seed layer in a selective epitaxial mode, so that damage to the LED units caused by preparing the LED units through etching or ion implantation is avoided, a small-size table top is easier to realize, and the luminous efficiency of the device is improved; meanwhile, the LED units can be completely isolated by preparing the reflecting grating layer, so that the realization of an epitaxial growth process can be ensured, the optical crosstalk between adjacent LED units can be avoided, and the luminous performance of the device is improved.
Drawings
The technical solution and other advantageous effects of the present invention will be made apparent by the following detailed description of the specific embodiments of the present invention with reference to the accompanying drawings.
FIG. 1 shows a schematic cross-sectional view of a micro light emitting diode display device of the present application;
FIG. 2 shows a schematic cross-sectional view of another micro light emitting diode display device of the present application;
FIG. 3 shows a schematic view of the substrate structure of the present application;
FIG. 4 shows a schematic view of the substrate structure of the present application;
FIG. 5 is a schematic cross-sectional view of a micro light emitting diode display device of the present application after forming a reflective grating layer;
FIG. 6 is a schematic cross-sectional view of a micro light emitting diode display device of the present application after patterning a reflective grid layer;
fig. 7 is a schematic cross-sectional view showing the formation of an insulating layer in a micro light emitting diode display device of the present application;
FIG. 8 shows a schematic cross-sectional view of a miniature light emitting diode display device of the present application with LED units formed therein;
FIG. 9 is a schematic cross-sectional view of a micro light emitting diode display device of the present application for forming a conductive bonding layer;
FIG. 10 is a schematic cross-sectional view of a micro light emitting diode display device of the present application after bonding of a substrate and a base plate;
FIG. 11 is a schematic view of a micro light emitting diode display device of the present application with a substrate and seed layer removed;
fig. 12 is a schematic cross-sectional view showing the formation of a through hole in a micro light emitting diode display device of the present application;
FIG. 13 is a schematic cross-sectional view of a micro light emitting diode display device of the present application with passivation layers formed and openings;
fig. 14 is a schematic cross-sectional view showing formation of an electrode layer in a micro light emitting diode display device of the present application;
FIG. 15 is a schematic cross-sectional view of a barrier layer formed in another micro light emitting diode display device of the present application;
FIG. 16 shows a schematic cross-sectional view of an LED unit formed in another micro light emitting diode display device of the present application;
FIG. 17 is a schematic cross-sectional view of a substrate and substrate bonded in another micro light emitting diode display device of the present application;
FIG. 18 shows a schematic view of a substrate and seed layer removed in another micro light emitting diode display device of the present application;
FIG. 19 is a schematic cross-sectional view of a via hole formed in another micro light emitting diode display device of the present application;
FIG. 20 is a schematic cross-sectional view of a passivation layer formed and open in another micro light emitting diode display device of the present application;
FIG. 21 shows a cross-sectional schematic of another micro light emitting diode display device of the present application forming an electrode layer;
reference numeral, 10-substrate, 11-conductive bonding layer, 12-reflective grid layer, 13-insulating layer, 14-LED unit, 15-via, 16-electrode layer, 17-passivation layer, 18-barrier layer, 20-substrate, 21-seed layer, 101-contact, 121-recess, 141-first doped semiconductor layer, 142-second doped semiconductor layer, 143-active layer, 100-first micro light emitting diode display device, 171-first opening, 172-second opening, 200-second micro light emitting diode display device.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
The disclosure of the present invention provides many different embodiments or examples for implementing different structures of the invention. In order to simplify the present disclosure, components and arrangements of specific examples are described herein. They are, of course, merely examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the application of other processes and/or the use of other materials.
Generally, the terminology may be understood, at least in part, in light of the above usage of the invention. For example, the term "one or more" as used herein depends at least in part on the invention and may be used to describe any component, structure or feature in the singular or may be used to describe any combination of components, structures or features in the plural. Similarly, terms such as "a," "an," or "the" may also be construed to convey a singular usage or a plural usage depending, at least in part, on the invention above. In addition, the term "based on …" may be understood as not necessarily intended to convey an exclusive set of factors, but rather as may be dependent, at least in part, upon the above that the invention may instead allow for the presence of additional factors that are not necessarily explicitly described.
It should be readily understood that the meanings of "on …", "on …" and "on …" in the present invention should be interpreted in the broadest sense such that "on …" means not only "directly on something" but also "on something" including intermediate members or layers present therebetween, and "on something" or "on something" means not only "on something" or "on something" but also "on something" without intermediate members or layers therebetween.
Furthermore, spatially relative terms, such as "under …," "under …," "lower," "above …," "upper," and the like, may be used herein to describe one element or component's relationship to another element or component as illustrated in the figures for ease of description. In addition to the orientations depicted in the drawings, the spatially relative terms are intended to encompass different orientations of the device in use or operation. The device may be rotated 90 deg. in other orientations or in other orientations and the spatially relative descriptors used in the present invention may be interpreted accordingly as such.
The term "layer" as used in the present invention refers to a portion of material comprising regions having a certain thickness. The layers may extend over the entire underlying or overlying structure, or may have a degree less than the extent of the underlying or overlying structure. Furthermore, the layer may be a region of homogeneous or heterogeneous continuous structure having a thickness less than the thickness of the continuous structure. For example, the layer may be located between the top and bottom surfaces of the continuous structure or between any pair of horizontal planes therebetween. The layers may extend horizontally, vertically and/or along a tapered surface. The substrate may be a layer, may include one or more layers therein, and/or may have one or more layers thereon, and/or thereon. One layer may comprise multiple layers. For example, the semiconductor layer may include one or more doped or undoped semiconductor layers, and may have the same or different materials.
The display device of the invention uses a Micro light emitting diode (Micro-LED) structure in which a Micro-LED array is highly integrated, and the distance of the pixel points of the Micro-LED in the array is further reduced to 5 μm. The display mode of the Micro-LEDs is that Micro-LED chips with the size of 5 microns or even smaller are connected to a driving panel, so that the precise control of the light emitting brightness of each Micro-LED chip is realized. The manufacturing method is suitable for Micro-LED structures and can be used for manufacturing Micro-size display devices.
In some embodiments, the term substrate as used in the present invention refers to a material to which a subsequent layer of material is added. The substrate itself may be patterned. The material added to the top of the substrate may be patterned or may remain unpatterned. The substrate may be, for example, but not limited to, a display substrate including a CMOS (Complementary Metal Oxide Semiconductor ) backplate or a TFT glass substrate.
In some embodiments, the structure of the LED units in the present invention may be co-cathodic or co-anodic or independent of each other.
Referring to fig. 1, there is provided a micro light emitting diode display device, specifically a first micro light emitting diode display device 100, which includes, from bottom to top, a substrate 10, a conductive bonding layer 11, an insulating layer 13, a reflective grid layer 12, a plurality of LED units 14; the substrate 10 includes a plurality of contacts 101; the conductive bonding layer 11 is positioned on the substrate 10, and the conductive bonding layer 11 is connected with the substrate 10; the reflective grating layer 12 is located at one side of the conductive bonding layer 11 away from the substrate 10, the reflective grating layer 12 has a plurality of grooves 121 arranged in an array, and the contacts 101 are located between adjacent grooves 121; an insulating layer 13 covers one surface of the reflective grating layer 12 and the side walls of the grooves 121 to insulate the reflective grating layer 12 from the conductive bonding layer 11; the LED unit 14 is positioned in the groove 121, and the LED unit 14 is electrically connected with the conductive bonding layer 11; the contact 101 is provided with a through hole 15 penetrating the reflective grating layer 12, the insulating layer 13 and the conductive bonding layer 11, and the contact 101 is electrically connected with the LED unit 14 through the through hole 15, so that the LED unit 14 is driven independently.
In some embodiments, due to the arrangement of the grooves 121, such that the reflective grating layer 12 has a grating structure that can be used to grow the LED units 14 and such that individual LED units 14 are independently formed in each groove 121, the LED units 14 are completely isolated under the grating structure, and the completely isolated LED units 14 are filled with the reflective grating layer 12 into a two-dimensional plane during or after the transfer of the LED units 14, such that the LED units are not easily detached from the substrate 10; meanwhile, since the reflective grating layer 12 is positioned between the LED units 14, optical crosstalk between adjacent image LED units 14 is also avoided, and the light emitting efficiency of the display device is improved.
In some embodiments, the substrate 10 may be formed of a semiconductor material such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, indium phosphide, or the like, or the substrate 10 may be formed of a non-conductive material such as glass, plastic, or sapphire wafer. Further, the substrate 10 contains a driving circuit for supplying an electric signal to the LED unit 104 to control brightness, and the substrate 10 may be a silicon-based CMOS driving board, a thin film transistor driving board, or the like.
In some embodiments, the conductive bonding layer 11 may be an adhesive layer formed on the substrate 10 or the LED unit 14 to bond the substrate and the LED unit 14, and the material of the conductive bonding layer 11 may be a conductive material such as a metal or a metal alloy, etc., and preferably, the material of the conductive bonding layer 11 may be Au, sn, in, cu or Ti, etc.
In some embodiments, the reflective grating layer 12 is a multi-functional layer structure for epitaxially growing the LED units 14 while preventing optical crosstalk between the LED units 14, and the material of the reflective grating layer 12 is selected from at least one of Ag, al, au; the reflective grating layer 12 needs to have the effect of simultaneously satisfying high temperature resistance and high reflectivity, since the process of forming the LED unit 14, whether bonding or epitaxy, is performed at a relatively high temperature, it is necessary to ensure that the material of the reflective grating layer 12 can satisfy the requirements of these manufacturing processes.
In some embodiments, the thickness of the reflective grating layer 12 is 720-1650 nm; for example, the thickness of the reflective grating layer 12 may be any one or a range between any two of 720nm, 800nm, 900nm, 1000nm, 1100nm, 1200nm, 1300nm, 1400nm, 1500nm, 1650 nm.
In some embodiments, in order to prevent shorting of the reflective grating layer 12 to the conductive bonding layer 11 and shorting of the reflective grating layer to the LED unit 14, an insulating layer 13 is provided, the material of the insulating layer 13 being selected from SiN x 、SiO 2 At least one of (a) and (b); the insulating layer 13 isolates the reflective grid layer 12 from the conductive bonding layer 11 on the one hand, and isolates the reflective grid layer 12 from the LED unit 14 on the other hand, thereby achieving an insulating effect.
In some embodiments, the thickness of the insulating layer 13 is 20-40 nm; for example, the thickness of the insulating layer 13 is any one value or a range between any two values of 20nm, 25nm, 30nm, 35nm, and 40 nm.
In some embodiments, further referring to fig. 2, the light emitting device further includes an electrode layer 16 and a passivation layer 17, the electrode layer 16 being located at a side of the LED unit 14 remote from the conductive bonding layer 11, the electrode layer 16 being connected to the contacts 101 through the via holes 15 so that the LED unit 14 is driven alone; the passivation layer 17 covers the other surface of the reflective grating layer 12 and the inner wall of the through hole 15 to electrically isolate the electrode layer 16 from the reflective grating layer 12, the insulating layer 13 and the conductive bonding layer 11, and a first opening 171 and a second opening 172 are arranged on the passivation layer 17 at positions corresponding to the LED unit 14 and the contact 101; the electrode layer 16 is electrically connected to the corresponding LED unit 14 and the contact 101 through the first opening 171 and the second opening 172, respectively.
In some embodiments, referring to fig. 7, the insulating layer 13 covers a surface of the reflective grating layer 12, where a surface is an upper surface of the reflective grating layer 12 in fig. 7; referring to fig. 13, the passivation layer 17 covers the other surface of the reflective grating layer 12, where the other surface is the inverted upper surface of the reflective grating layer 12 in fig. 13, and thus, the surface of the reflective grating layer 12 covered by the insulating layer 13 is two different surfaces disposed opposite to the surface of the reflective grating layer 12 covered by the passivation layer 17.
In some embodiments, the electrode layer 16 mainly serves as an electrical connection, and it is understood that the electrical connection between the LED unit 14 and the contact 101 is completed by the electrode layer 16. The material of the electrode layer 16 may be a transparent conductive material such as Indium Tin Oxide (ITO) or zinc oxide (ZnO), or the material of the electrode layer 16 may be Cr, ti, pt, au, al, cu, ge or Ni, or the like.
In some embodiments, the passivation layer 17 mainly serves to protect the LED unit 14 and the insulation, and the passivation layer 17 covers the inner wall of the through hole 15 specifically means: the passivation layer 17 needs to completely cover the reflective grating layer 12, the conductive bonding layer 11 and the insulating layer 13 within the via hole 15 to prevent a short circuit between the electrode layer 16 and the reflective grating layer 12, the conductive bonding layer 11. The material of the passivation layer 17 may be SiO 2 、Al 2 O 3 SiN or other suitable material, the material of the passivation layer 17 may also be polyimide, SU-8 photoresist or other photopatternable polymer, etc.
In some embodiments, referring further to fig. 1, the LED unit 14 is formed by selective epitaxial growth, and the LED unit 14 includes a first doping type semiconductor layer 141, a second doping type semiconductor layer 142, and an active layer 143 therebetween. Wherein the LED unit 14 is completely filled in the groove 121 during the formation process to ensure complete contact between the LED unit 14 and the insulating layer 13 without a gap, so that a short circuit to the LED unit 14 during the formation of the conductive bonding layer 11 can be prevented.
In some embodiments, the plurality of the above plurality of LED units 14 represents two and more than two numbers.
In some embodiments, the active layer 143 is disposed between the first and second doping type semiconductor layers 141 and 142 and provides light. The active layer 114 is a layer that recombines electrons and holes supplied from the first doped semiconductor layer 141 and the second doped semiconductor layer 142, respectively, and outputs light of a specific wavelength, and may have a single quantum well structure or a Multiple Quantum Well (MQW) structure and well layers and barrier layers alternately stacked.
In some embodiments, the material of the LED unit 14 is one or more layers based on IIVI materials (such as ZnSe or ZnO) or IIIV nitride materials (such as GaN, alN, inN, inGaN, gaP, alInGaP, alGaAs and alloys thereof).
In some embodiments, the first doped semiconductor layer 141 is an n-type semiconductor layer and the second doped semiconductor layer 142 is a p-type semiconductor layer; for example, the first doping type semiconductor layer 141 may be n-type GaN, n-type InGaN, n-type AlInGaP, or the like; the second doped semiconductor layer 142 may be p-type GaN, p-type InGaN, or p-type AlInGaP, etc.
In some embodiments, the spacing between adjacent LED units 14 is 1-10 μm; for example, the pitch between the LED units 14 is any one value or a range between any two values of 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm.
In some embodiments, the ratio of the thickness of the reflective grille layer 12 to the thickness of the LED unit 14 is (0.9-1.1): 1. For example, the thickness ratio of the reflective grille layer 12 to the thickness of the LED unit 14 is 0.9:1, 1.0:1, or 1.1:1. When the above-mentioned proportional relation is satisfied, the stability of the preparation formation of the LED unit 14 can be ensured, and the reflection effect of the reflective grille layer 12 on the light emitted from the LED unit 14 can also be ensured.
In some embodiments, the size of the LED unit 14 is 1-10 μm; for example, the size of the LED unit 14 is any one value or a range between any two values of 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm.
In some embodiments, the thickness of the LED unit 14 is 800-1500 nm, for example, the thickness of the ED unit 14 may be any one or a range between any two of 800nm, 900nm, 1000nm, 1100nm, 1200nm, 1300nm, 1400nm, 1500 nm.
Further, in the LED unit 14, the thickness of the first doped semiconductor layer 141 is 100 to 200nm; for example, the thickness of the first doping type semiconductor layer 141 is any one value or a range between any two values of 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, and 200 nm.
Further, in the LED unit 14, the thickness of the second doped semiconductor layer 142 is 600-1000 nm; for example, the thickness of the second doping type semiconductor layer 142 is any one value or a range between any two values of 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, 1000 nm.
Further, in the LED unit 14, the thickness of the active layer 143 is 100 to 300nm; for example, the thickness of the active layer 143 may be any one value or a range between any two values of 100nm, 150nm, 200nm, 250nm, and 300 nm.
In some embodiments, referring to fig. 2, another structure of a micro light emitting device is provided, which is a second micro light emitting device 200, and the specific structure is similar to the first micro light emitting device 100 of fig. 1, except that the second micro light emitting device 200 further includes a barrier layer 18, and the barrier layer 18 is located between the reflective grid layer 12 and the insulating layer 13; the via 15 penetrates the barrier layer 18, and the passivation layer 17 covers a side of the barrier layer 18 adjacent to the via 15, so that the electrode layer 16 and the barrier layer 18 are isolated from each other.
In some embodiments, the purpose of the barrier layer 18 is to prevent migration of material of the reflective grille layer 12 into the LED unit 14 to cause failure of the LED unit 14. The material of the barrier layer 18 is selected from at least one of Ni, tiW, pt, cu; the thickness of the barrier layer 18 is 2 to 5nm, preferably 3 to 4nm.
In some embodiments, the present application further provides a method for manufacturing a micro light emitting device, including:
providing a substrate 10, wherein the substrate 10 comprises a driving circuit and a plurality of contacts 101 electrically connected with the driving circuit;
providing a substrate 20, forming a seed layer 21 on the substrate 20;
forming a reflective grating layer 12 on the seed layer 21, patterning the reflective grating layer 12 such that the reflective grating layer 12 has a plurality of grooves 121 arranged in an array and exposing the seed layer 21, the contacts 101 being located between adjacent grooves 121;
forming an insulating layer 13, wherein the insulating layer 13 covers one surface of the reflective grating layer 12 and the side walls of the grooves 121;
forming a plurality of LED units 14, the LED units 14 being formed in the corresponding grooves 121;
bonding the substrate 10 and the substrate 20 through the conductive bonding layer 11, and removing the substrate 20 and the seed layer 21;
a plurality of through holes 15 are formed, the through holes 15 penetrating the reflective grid layer 12, the insulating layer 13, and the conductive bonding layer 11 and exposing the corresponding contacts 101, the contacts 101 being electrically connected with the LED units 14 through the through holes 15, so that the LED units 14 are individually driven.
In some embodiments, the contact 101 is electrically connected to the LED unit 14 through the through hole 15, so that the LED unit 14 is driven separately, further including:
Forming a passivation layer 17 and an electrode layer 16, wherein the passivation layer 17 covers the other surface of the reflective grating layer 12 and the inner wall of the through hole 15 to electrically isolate the electrode layer 16 from the reflective grating layer 12, the insulating layer 13 and the conductive bonding layer 11;
a first opening 171 and a second opening 172 are provided on the passivation layer 17 at positions corresponding to the LED unit 14 and the contact 101; the electrode layer 16 is electrically connected to the second doping type semiconductor layer 142 and the contact 101 through the first opening 171 and the second opening 172, respectively.
In some embodiments, prior to the step of providing the insulating layer 13, further comprising: a barrier layer 18 is provided, the barrier layer 18 being located between the reflective grating layer 12 and the insulating layer 13.
In some embodiments, the LED unit 14 is formed by selective epitaxial growth, which refers specifically to a technique of growing a single crystal layer according to a crystal orientation, and in order to achieve the epitaxy of the LED unit 14, a seed layer 21 is first prepared on the substrate 20, where the seed layer 21 is used for the epitaxy of the LED unit 14.
In some embodiments, the seed layer 21 may be a single layer structure or a multi-layer structure. The material of the seed layer 21 is selected from at least one of GaN, alGaN, alN, inN, inGaN, gaP, alInGaP, alGaAs. Further, the selective epitaxial growth of the present application is homoepitaxy, i.e. the material of the seed layer 21 corresponds to the material of the LED unit 14 formed.
In some embodiments, the seed layer 21 is formed on the substrate 20 by epitaxy, and in order to ensure uniformity of epitaxial growth of the seed layer 21, the epitaxy includes metal organic vapor deposition (MOCVD), molecular Beam Epitaxy (MBE), hydride Vapor Phase Epitaxy (HVPE), and the like, wherein the metal organic vapor deposition (MOCVD) is a novel vapor phase epitaxy technique based on vapor phase epitaxy. In the process of preparing single crystal by MOCVD method, trimethyl gallium is generally used as gallium source, ammonia gas is used as nitrogen source, and mixed gas of hydrogen and nitrogen is used as carrier gas, and the reactants are loaded into the reaction cavity and heated to a certain temperature to react, so that GaN molecular groups can be generated on the substrate, and the GaN single crystal layer is finally formed by adsorption, nucleation and growth on the surface of the substrate.
In some embodiments, to achieve the fabrication of the LED unit 14, it is necessary to fabricate the reflective grating layer 12 on the seed layer 21 to ensure epitaxial growth and isolation of the LED unit 14; in the manufacturing method of the present application, the LED unit 14 is manufactured by depositing the reflective grating layer 12 on the seed layer 21 and patterning the reflective grating layer 12 to obtain a grating structure while having a plurality of grooves 121 arranged in an array in the reflective grating layer 12, and then selectively epitaxially growing the seed layer 21 having the grating structure formed on the surface, for example, putting the seed layer 21 having the grating structure formed on the surface into a metal organic vapor deposition apparatus. At this point, the resulting LED unit 14 has been completely isolated by the reflective grille layer 12; in addition, another purpose of selecting the reflective grille layer 12 as a mask is that the reflective grille layer 12 can also prevent optical crosstalk between the isolated LED units 14. The isolation of the LED unit does not introduce processes such as etching or ion implantation, the LED unit is directly obtained through selective epitaxy, damage to the LED unit in the etching or ion implantation process is avoided, the isolation method is particularly suitable for preparation of Micro-LED structures with smaller sizes, small-size table tops are easier to realize, and the luminous efficiency of the device is improved.
In some embodiments, using MOCVD as an example, the process of selective epitaxial growth specifically includes: the reaction temperature is 700-1100 ℃, the pressure is 400 mbar, the reaction time is 10-20 min, and the V/III ratio is 900; the first doped semiconductor layer 141 such as n-GaN, the active layer 143 such as MQW, and the second doped semiconductor layer 142 such as p-GaN are respectively epitaxially grown under the above process conditions to obtain the LED unit 14. Meanwhile, in the selective epitaxy process, the grid structure and the epitaxy condition are adjusted, so that the semi-polar surface LED unit can be obtained, which is determined by the GaN crystal structure, a stronger polarized electric field exists on the polar surface, and the semi-polar surface polarized electric field is small. When the polarized electric field is smaller, the overlapping degree of the electron hole wave functions is increased, and higher internal quantum efficiency can be obtained, so that the luminous efficiency of the device is increased.
In some embodiments, the step of forming the through holes 15 at positions of the reflective grating layer 12, the insulating layer 13, and the conductive bonding layer 11 corresponding to the contacts 101 includes:
etching the reflecting grating layer 12, the insulating layer 13 and the conductive bonding layer 11 in sequence to form a through hole 15; wherein, the reflecting grating layer 12 and the conductive bonding layer 11 are etched by plasma etching or ion beam etching; the insulating layer 13 is etched using reactive ions.
Fig. 3 to 14 show cross-sectional views of the first micro light emitting device 100 at various stages in the manufacturing process.
Referring to fig. 3 and 4, a base plate 10 and a substrate 20 are provided, respectively, a driving circuit is formed in the base plate 10, and the driving circuit is connected to the contacts 101; a seed layer 21 is formed by epitaxy on the substrate 20, the seed layer 21 being GaN.
Referring to fig. 5 and 6, the reflective grating layer 12 is formed on the seed layer 21 by deposition, electron beam evaporation or sputtering, the reflective grating layer 12 is Ag, and then the reflective grating layer 12 is patterned by photolithography so that the reflective grating layer 12 has grooves 121 exposing the seed layer 21, the grooves 121 being used to form the LED units 14; the patterned reflective grating layer 12 includes a top surface and side surfaces connected to the top surface.
Referring to fig. 7, an insulating layer 13 is formed on the reflective grating layer 12 by evaporation or deposition, the insulating layer 13 completely covers the top and side surfaces of the reflective grating layer 12 and exposes the seed layer 21 in the grooves 121; the insulating layer 13 is SiN x 。
Referring to fig. 8, the structure of fig. 7 is placed in a MOCVD tool for epitaxy such that the recess 121 is formed with the LED unit 14 therein, and the recess 121 is completely filled with the LED unit 14; the LED unit 14 includes, in order from bottom to top, a first doped semiconductor layer 141, an active layer 143, and a second doped semiconductor layer 142. The first doped semiconductor layer 141 is n-GaN, and the second doped semiconductor layer 142 is p-GaN.
Referring to fig. 9 and 10, a conductive bonding layer 11 is formed by deposition on the structures obtained in fig. 8 and the substrate 10, respectively, with preferred bonding being Cu-Sn, au-Cu or Cu-Cu metal bonding. The substrate 10 and the conductive bonding layer 11 corresponding to the substrate 20 may be bonded to form a whole layer structure, wherein the conductive bonding layer 11 is integrated to form a whole layer. In some other embodiments, bonding may be performed after forming the conductive bonding layer 11 only on the substrate 10 or only on the resulting structure of fig. 8.
Referring to fig. 11, the seed layer 21 and the substrate 20 are removed by a removal method including, but not limited to, laser lift-off, dry etching, wet etching, mechanical polishing, and the like.
Referring to fig. 12, the reflective grating layer 12, the insulating layer 13, and the conductive bonding layer 11 are etched, respectively, to form the via holes 15 and expose the contacts 101, wherein the reflective grating layer 12 and the conductive bonding layer 11 are etched using plasma or ion beam (ICP/IBE), and the insulating layer 13 is etched using Reactive Ion (RIE).
Referring to fig. 13, after forming the through hole 15, a passivation layer 17 is further formed, covering the LED unit 14, the partial reflection grid layer 12, the contact 101, and the reflection grid layer 12, the insulating layer 13, and the conductive bonding layer 11, respectively, on the side near the through hole 15; the first opening 171 and the second opening 172 are then provided in the passivation layer 17 at positions corresponding to the LED unit 14 and the contacts 101.
Referring to fig. 14, an electrode layer 16 is formed on the basis of the structure obtained in fig. 13, and the electrode layer 16 is electrically connected to the second doped semiconductor layer 142 and the contact 101 through the first opening 171 and the second opening 172, respectively, to obtain the first micro light emitting diode display device 100 shown in fig. 1.
Fig. 15 to 21 show cross-sectional views of a second micro light emitting diode display device 200 at various stages in the manufacturing process.
In which the steps from providing the substrate 20, the base plate 10 to patterning the reflective grating layer 12 in the second micro light emitting device 200 are identical to those of the first micro light emitting device 100, see fig. 3-6 for a specific procedure.
Referring to fig. 15, after forming the patterned reflective grating layer 12, a barrier layer 18 is formed on the surface of the reflective grating layer 12, and then an insulating layer is formed on the surface of the barrier layer 18; wherein, the barrier layer 18 is formed on the reflecting grating layer 12 by evaporation or deposition, and the barrier layer 18 completely covers the top surface and the side surfaces of the reflecting grating layer 12; the insulating layer 13 is formed on the barrier layer 18 by evaporation or deposition, the insulating layer 13 completely covers the top and side surfaces of the barrier layer 18, and finally, a part of the barrier layer 18 and a part of the insulating layer 13 are removed to expose the seed layer 21 in the recess 121, respectively. The barrier layer 18 is Ni.
Referring to fig. 16, the structure obtained in fig. 15 is epitaxially placed in the MOCVD equipment so that the LED units 14 are formed in the grooves 121; the LED unit 14 includes, in order from bottom to top, a first doped semiconductor layer 141, an active layer 143, and a second doped semiconductor layer 142.
Referring to fig. 17, the base plate 10 and the substrate 20 are bonded, wherein the conductive bonding layer 11 is integrated as one layer after being fused. In some other embodiments, bonding may be performed after forming the conductive bonding layer 11 only on the substrate 10 or only on the resulting structure of fig. 8.
Referring to fig. 18, the seed layer 21 and the substrate 20 are removed by a removal method including, but not limited to, laser lift-off, dry etching, wet etching, mechanical polishing, and the like.
Referring to fig. 19, the reflective grating layer 12, the barrier layer 18, the insulating layer 13, and the conductive bonding layer 11 are etched, respectively, to form the via holes 15 and expose the contacts 101, wherein the reflective grating layer 12 and the conductive bonding layer 11 are etched using plasma or ion beam (ICP/IBE), and the barrier layer 18 and the insulating layer 13 are etched using Reactive Ions (RIE).
Referring to fig. 20, after forming the through hole 15, a passivation layer 17 is further formed, covering the LED unit 14, the partial reflection grid layer 12, the contact 101, and the reflection grid layer 12, the insulating layer 13, and the conductive bonding layer 11, respectively, on the side near the through hole 15; the first opening 171 and the second opening 172 are then provided in the passivation layer 17 at positions corresponding to the LED unit 14 and the contacts 101.
Referring to fig. 21, an electrode layer 16 is formed on the basis of the structure obtained in fig. 20, and the electrode layer 16 is electrically connected to the second doping type semiconductor layer 142 and the contact 101 through the first opening 171 and the second opening 172, respectively, to obtain the micro light emitting device shown in fig. 2.
The reflecting grating layer 12 simultaneously serves as a grating structure and a reflecting structure, the LED units 14 can be epitaxially grown and completely isolated through the grating structure, and when the LED units 14 are transferred to the substrate 10 or after the transfer, the completely isolated LED units 14 are filled into a two-dimensional plane by the reflecting grating layer 12, so that the LED units are not easy to fall off from the substrate 10; meanwhile, since the reflective grating layer 12 is positioned between the LED units 14, optical crosstalk between adjacent image LED units 14 is further avoided due to the high reflectivity of the reflective grating layer 12, and the light emitting efficiency of the display device is improved. The LED unit 14 is formed on the seed layer 21 in a selective epitaxial mode, damage to the LED unit 14 caused by preparing the LED unit 14 through etching or ion implantation is avoided, meanwhile, a small-size table top is easier to realize, and the luminous efficiency of the device is improved.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The foregoing has described the invention in some detail, wherein specific examples are employed to illustrate the principles and embodiments of the invention, and the above examples are provided to facilitate understanding of the technical solution and core idea of the invention; those of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (12)
1. A micro light emitting diode display device, comprising:
a substrate (10), the substrate (10) comprising a driving circuit and a plurality of contacts (101) electrically connected to the driving circuit;
a reflective grating layer (12) located on the substrate (10); the reflecting grating layer (12) is provided with a plurality of grooves (121) which are arrayed, and the contacts (101) are positioned between the adjacent grooves (121);
a conductive bonding layer (11) located between the substrate (10) and the reflective grid layer (12);
an insulating layer (13), wherein the insulating layer (13) covers one surface of the reflecting grating layer (12) and the side wall of the groove (121) to insulate the reflecting grating layer (12) from the conductive bonding layer (11);
A plurality of LED units (14), wherein the LED units (14) are positioned in the grooves (121), and the LED units (14) are electrically connected with the conductive bonding layer (11); the contact (101) is provided with a through hole (15) penetrating through the reflecting grating layer (12), the insulating layer (13) and the conductive bonding layer (11), and the contact (101) is electrically connected with the corresponding LED unit (14) through the through hole (15) so that the LED unit (14) is driven independently;
-a barrier layer (18), said barrier layer (18) being located between said reflective grating layer (12) and said insulating layer (13);
the material of the reflecting grating layer (12) is at least one of Ag, al and Au;
the material of the barrier layer (18) is selected from at least one of Ni, tiW, pt, cu.
2. The micro light emitting diode display device of claim 1, further comprising:
a passivation layer (17) and an electrode layer (16), wherein the passivation layer (17) covers the other surface of the reflective grating layer (12) and the inner wall of the through hole (15) electrically isolates the electrode layer (16) from the reflective grating layer (12), the insulating layer (13) and the conductive bonding layer (11), and a first opening (171) and a second opening (172) are arranged on the passivation layer (17) corresponding to the positions of the LED unit (14) and the contact (101); the electrode layer (16) is electrically connected with the corresponding LED unit (14) and the contact (101) through the first opening (171) and the second opening (172).
3. A micro light emitting diode display device according to claim 1, characterized in that the LED unit (14) is formed in the recess (121) by means of selective epitaxial growth, the LED unit (14) comprising a first doped semiconductor layer (141), a second doped semiconductor layer (142) and an active layer (143) located therebetween.
4. The miniature light emitting diode display device according to claim 1, characterized in that the spacing between the LED units (14) is 1-10 μm; the LED unit (14) has a size of 1-10 [ mu ] m.
5. The micro light emitting diode display device according to claim 1, wherein the ratio of the thickness of the reflective grating layer (12) to the thickness of the LED unit (14) is (0.9-1.1): 1.
6. The micro light emitting diode display device according to claim 1, wherein the thickness of the reflective grating layer (12) is 720-1650 nm; the thickness of the LED unit (14) is 800-1500 nm.
7. A micro light emitting diode display device according to claim 1, characterized in that the substrate (10) is a silicon-based CMOS drive board or a thin film field effect transistor drive board.
8. The preparation method of the miniature light-emitting diode display device is characterized by comprising the following steps:
providing a substrate (10), wherein the substrate (10) comprises a driving circuit and a plurality of contacts (101) electrically connected with the driving circuit;
providing a substrate (20), forming a seed layer (21) on the substrate (20);
-forming a reflective grating layer (12) on the seed layer (21), patterning the reflective grating layer (12) such that the reflective grating layer (12) has a plurality of grooves (121) arranged in an array and exposing the seed layer (21), the contacts (101) being located between adjacent ones of the grooves (121);
forming an insulating layer (13), wherein the insulating layer (13) covers one surface of the reflecting grating layer (12) and the side wall of the groove (121);
-forming a plurality of LED units (14), the LED units (14) being formed within the corresponding grooves (121);
bonding the substrate (10) and the substrate (20) through a conductive bonding layer (11), and removing the substrate (20) and the seed layer (21);
forming a plurality of through holes (15), wherein the through holes (15) penetrate through the reflecting grating layer (12), the insulating layer (13) and the conductive bonding layer (11) and expose the corresponding contacts (101), and the contacts (101) are electrically connected with the LED units (14) through the through holes (15) so that the LED units (14) are driven independently;
Before the step of forming the insulating layer (13), it further comprises: -forming a barrier layer (18), said barrier layer (18) being located between said reflective grating layer (12) and said insulating layer (13);
the material of the reflecting grating layer (12) is at least one of Ag, al and Au;
the material of the barrier layer (18) is selected from at least one of Ni, tiW, pt, cu.
9. The method of manufacturing a micro light emitting diode display device according to claim 8, wherein the contact (101) is electrically connected to the LED unit (14) through the through hole (15), so that the LED unit (14) is individually driven, further comprising:
-forming a passivation layer (17) and an electrode layer (16), the passivation layer (17) covering the other surface of the reflective grating layer (12) and the inner walls of the through holes (15) electrically isolating the electrode layer (16) from the reflective grating layer (12), the insulating layer (13) and the electrically conductive bonding layer (11);
-providing a first opening (171) and a second opening (172) on the passivation layer (17) at positions corresponding to the LED unit (14) and the contact (101); the electrode layer (16) is electrically connected to the LED unit (14) and the contact (101) through the first opening (171) and the second opening (172), respectively.
10. The method of manufacturing a micro light emitting diode display device according to claim 8, wherein the LED unit (14) is formed in the recess (121) by selective epitaxial growth, the LED unit (14) comprising a first doped semiconductor layer (141), a second doped semiconductor layer (142) and an active layer (143) therebetween.
11. The method for manufacturing a micro light emitting diode display device according to claim 8, wherein a pitch between the LED units (14) is 1 to 10 μm; the LED unit (14) has a size of 1-10 [ mu ] m.
12. The method of manufacturing a micro light emitting diode display device according to claim 8, wherein the step of forming the through hole (15) comprises:
etching the reflecting grating layer (12), the insulating layer (13) and the conductive bonding layer (11) in sequence to form the through hole (15); wherein the reflecting grating layer (12) and the conductive bonding layer (11) are etched by plasma or ion beams; the insulating layer (13) is etched by reactive ions.
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