CN109103306A - A kind of LED chip for display backlight module and preparation method thereof, backlight module - Google Patents
A kind of LED chip for display backlight module and preparation method thereof, backlight module Download PDFInfo
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- CN109103306A CN109103306A CN201810833584.9A CN201810833584A CN109103306A CN 109103306 A CN109103306 A CN 109103306A CN 201810833584 A CN201810833584 A CN 201810833584A CN 109103306 A CN109103306 A CN 109103306A
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- 239000000758 substrate Substances 0.000 claims abstract description 107
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- 239000011248 coating agent Substances 0.000 claims abstract description 56
- 238000000576 coating method Methods 0.000 claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
The invention discloses a kind of LED chips for display backlight module, including substrate, set on the light emitting structure of substrate surface, the light emitting structure includes the first semiconductor layer set on substrate surface, active layer and first electrode on the first semiconductor layer, the second semiconductor layer on active layer, the first reflecting layer on the second semiconductor layer, and the second electrode on the first reflecting layer；Set on the second reflecting layer of substrate back；Set on the coating of side of substrate；Wherein, the refractive index of the coating is greater than the refractive index of substrate.LED chip of the invention reduces the total reflection effect of chip by the mutual cooperation in the first reflecting layer and the second reflecting layer, increases light-emitting angle.Correspondingly, the present invention also provides a kind of production method of LED chip for display backlight module and a kind of light emitting modules.
Description
Technical field
The present invention relates to LED technology field more particularly to a kind of LED chips for display backlight module
And preparation method thereof, backlight module.
Background technique
Light emitting diode (Light Emitting Diode, LED) is to be applied to liquid crystal display (Liquid at present
Crystal Display, LCD) on one of the principal light source of backlight module, be the spontaneous light source of low-power.
Traditional backlight module generally comprises circuit board 1, multiple LED chips 2 and diffusion sheet 3, as shown in Figure 1.In Fig. 1
LED chip 2 be top light emitting, diffusion sheet 3 is located at the top of LED chip 2, and the light that LED chip 2 issues passes through diffusion sheet 3
Uniform area source, directive liquid crystal display panel are mixed into after diffusion.Wherein, existing LED chip 2 is used as backlight module
Light source, due to needing to be mixed into uniform area source, needed for light mixing distance it is big, i.e., between LED chip 2 and light source board 3
Distance it is big, to increase the volume of backlight module, be not able to satisfy the more and more frivolous requirement of display.
In order to reduce the thickness of backlight module, existing method is the photism for removing diffusion sheet, but leading to LED chip
Can meet display lighting uniformly, the requirement without stain.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of LED chip for display backlight module, pass through
The total reflection effect of chip is reduced, beam angle is increased.
Technical problem to be solved by the present invention lies in provide a kind of system of LED chip for display backlight module
Make method, reduce the total reflection effect of chip, increases beam angle.
Technical problem to be solved by the present invention lies in, a kind of backlight module is provided, backlight module brightness homogeneity is improved,
To improve the picture brightness uniformity of display.
In order to solve the above-mentioned technical problems, the present invention provides a kind of LED chip for display backlight module, packets
It includes:
Substrate；
Set on the light emitting structure of substrate surface, the light emitting structure includes the first semiconductor layer set on substrate surface, if
In active layer and first electrode on the first semiconductor layer, the second semiconductor layer on active layer is set to the second semiconductor
The first reflecting layer on layer, and the second electrode on the first reflecting layer；
Set on the second reflecting layer of substrate back；
Set on the coating of side of substrate；
Wherein, the refractive index of the coating is greater than the refractive index of substrate.
As an improvement of the above scheme, the lateral wall of the lateral wall of the coating and the first semiconductor layer and the second reflecting layer
Concordantly.
As an improvement of the above scheme, the coating with a thickness of 10-200 microns.
As an improvement of the above scheme, the coating is made of aluminium oxide or silica glass bonding material.
As an improvement of the above scheme, the side wall of the coating is uneven.
As an improvement of the above scheme, the reflectivity in second reflecting layer is greater than the reflectivity in the first reflecting layer.
Correspondingly, the present invention also provides a kind of production methods of LED chip for display backlight module, comprising:
Substrate is provided；
Light emitting structure is formed in substrate surface, the light emitting structure includes the first semiconductor layer set on substrate surface, if
In active layer and first electrode on the first semiconductor layer, the second semiconductor layer on active layer is set to the second semiconductor
The first reflecting layer on layer, and the second electrode on the first reflecting layer；
It is cut at the back side of the substrate along the edge of light emitting structure, forms the Cutting Road for running through the substrate；
Packing material forms coating in the Cutting Road, wherein the refractive index of coating is greater than the refractive index of substrate；
At the back side of the substrate with the second reflecting layer is formed on coating.
As an improvement of the above scheme, the width of the Cutting Road is 10-200 microns.
As an improvement of the above scheme, the coating is made of aluminium oxide or silica glass bonding material.
Correspondingly, the present invention also provides a kind of backlight module, including substrate, it is multiple on substrate such as claim
LED chip described in 1-6 and the diffuser plate above the LED chip.
The invention has the following beneficial effects:
1, a kind of LED chip for display backlight module provided by the invention, comprising: substrate；Set on substrate surface
Light emitting structure, the light emitting structure includes the first semiconductor layer set on substrate surface, having on the first semiconductor layer
Active layer and first electrode, the second semiconductor layer on active layer, the first reflecting layer on the second semiconductor layer, and
Second electrode on the first reflecting layer；Set on the second reflecting layer of substrate back；Set on the coating of side of substrate；Wherein,
The refractive index of the coating is greater than the refractive index of substrate.LED chip of the invention passes through the first reflecting layer and the second reflecting layer
It cooperates, all light that active layer is issued are issued from the side of chip, and light is avoided to issue from the vertical plane of chip；And pass through
Coating is set in the side of substrate, since the refractive index of coating is greater than the refractive index of substrate, is projected from substrate to reduce light
Total reflection, while increasing light-emitting angle, make the beam spread projected from substrate, improve the brightness between backlight module LED chip
Homogeneity, and then improve the picture brightness uniformity of display.
2, a kind of backlight module provided by the invention, including substrate, multiple LED chips of the present invention on the substrate and
Diffuser plate above the LED chip.Since the light of LED chip of the present invention is all projected from side, rather than from front
Outgoing, so that the light projected on diffuser plate is more uniform, because projecting light by way of dislocation from chip sides, Ke Yigeng
Add and equably project on diffuser plate, to reduce the distance between LED chip and diffuser plate, reduces the thickness of light emitting module.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing light emitting module；
Fig. 2 is the structural schematic diagram of LED chip embodiment one of the present invention；
Fig. 3 is the structural schematic diagram of LED chip embodiment two of the present invention；
Fig. 4 is the production method flow chart of LED chip of the present invention；
Fig. 5 is the structural schematic diagram of light emitting module of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with attached drawing
Step ground detailed description.
Referring to fig. 2, Fig. 2 is the structural schematic diagram of LED chip embodiment one of the present invention, provided by the invention a kind of for showing
Show that the LED chip of device backlight module, including substrate 10, the light emitting structure set on 10 surface of substrate, the light emitting structure include setting
The first semiconductor layer 21 in 10 surface of substrate, active layer 22 and first electrode 31 on the first semiconductor layer 21, is set to
The second semiconductor layer 23 on active layer 22, the first reflecting layer 24 on the second semiconductor layer 23, and it is set to first instead
The second electrode 32 on layer 24 is penetrated, set on second reflecting layer 40 at 10 back side of substrate, coating 50 set on 10 side of substrate,
In, the refractive index of the coating 50 is greater than the refractive index of substrate 10.
LED chip of the invention, by the mutual cooperation in the first reflecting layer and the second reflecting layer, the institute that active layer is issued
There is light to issue from the side of chip, light is avoided to issue from the vertical plane of chip；And by the way that coating is arranged in the side of substrate, due to
The refractive index of coating is greater than the refractive index of substrate, to reduce the total reflection that light is projected from substrate, while increasing light-emitting angle,
Make the beam spread projected from substrate, improves the brightness homogeneity between backlight module LED chip, and then improve the picture of display
Brightness uniformity.
It should be noted that light, which is incident on the interface of different medium, to be sent out according to Snell's law (Snell's Law)
Raw reflection and refraction.Wherein incident light and refraction light are located in approximately the same plane, and as follows with the angle of interface normal satisfaction
Relationship: n1sinθ1-n2sinθ2, when light injects optically thinner medium (refractive index n2 by optically denser medium (refractive index n1 bigger medium)
Smaller medium) when (by substrate incident into air), if incidence angle θ 1 be greater than critical angle θ c, it may occur that total reflection.
The present invention adds the refractive index coating 50 higher than 10 refractive index of substrate on substrate 10, then light can be by optically thinner medium (refractive index
N1 smaller medium) optically denser medium (refractive index n2 bigger medium) is injected, it will not be totally reflected, therefore can increased core
The light-emitting angle of piece, and improve the light extraction efficiency of chip.
In order to reduce the volume of chip, while the total reflection that light is projected from substrate is further reduced, increases beam angle
Degree makes the beam spread projected from substrate, improves the brightness homogeneity between backlight module LED chip, and then improve display
The lateral wall of picture brightness uniformity, the coating 50 is concordant with the lateral wall of the first semiconductor layer and the second reflecting layer.
Preferably, the coating 50 with a thickness of 10-200 microns.Preferably, the coating 50 is micro- with a thickness of 50-150
Rice.More preferably, the coating 50 with a thickness of 80-120 microns.When the thickness of coating 50 is less than 10 microns, influence substrate with
Refraction effect between coating is unfavorable for light and reflects from substrate, reduces the brightness homogeneity between chip；When coating 50
Thickness when being greater than 200 microns, the area of substrate 10 is too small, and chip, which is easy to happen, to burst apart, and reduces the chip-count of single wafer
Amount.
Further, the coating 50 is made of aluminium oxide or silica glass bonding material.Due to aluminium oxide and silica glass key
The refractive index of condensation material and the refractive index close of substrate, and less times greater than the refractive index of substrate, it is more conducive to reduce light in this way from lining
The total reflection projected in bottom, increase light-emitting angle, make from substrate project beam spread, improve backlight module LED chip between
Brightness homogeneity, and then improve the picture brightness uniformity of display.
In order to improve the side lighting area of coating 50, so that chip sides go out, light is more uniform, the side of the coating 50
Wall is uneven.The coating 50 can be corroded using the method for wet etching, make it have rough surface.
Specifically, the material of substrate 10 can be sapphire, silicon carbide or silicon, or other semiconductor materials, this
Substrate in embodiment is preferably Sapphire Substrate.
First semiconductor layer 21 and the second semiconductor layer 23 of the invention is gallium nitride-based semiconductor, and active layer 22 is
Gallium nitride base active layer；In addition, the first semiconductor layer 21 provided by the embodiments of the present application, the second semiconductor layer 23 and active layer 22
Material can also be other materials, this application is not particularly limited.
Wherein, the first semiconductor layer 21 can be n type semiconductor layer, then the second semiconductor layer 23 is p type semiconductor layer；Or
Person, the first semiconductor layer 21 is p type semiconductor layer, and the second semiconductor layer 23 is n type semiconductor layer, for the first semiconductor layer
21 and second semiconductor layer 23 conduction type, need to be designed according to practical application, this application be not particularly limited.
It should be noted that in the other embodiments of the application, the substrate 10 and first semiconductor layer 21 it
Between be equipped with buffer layer (not shown).
First electrode 31 and second electrode 32 are made of one or more of Cr, Al, Ni, Ti, Pt and Au metal.
In order to guarantee that all light that active layer issues are issued from the side of chip, the reflectivity in second reflecting layer 40 is big
Reflectivity in the first reflecting layer 24.Preferably, the reflectivity in the first reflecting layer 24 is less than or equal to 80%, the second reflecting layer 40
Reflectivity is greater than 99%.More preferably, the reflectivity in the first reflecting layer 24 is less than or equal to 70%, and the reflectivity in the second reflecting layer 40 is big
In 99%.
Specifically, first reflecting layer 24 is made of Ag.Preferably, first reflecting layer 24 further include Ti, W, N and
One or more of Ni metal.Added in the first reflecting layer 24 above-mentioned element can not only improve the first reflecting layer 24 light it is anti-
Ability is penetrated, and the transfer ability of Ag can also be lowered, prevents the voltage of chip from increasing, leak electricity short-circuit.
For the ease of adjusting the reflectivity in the second reflecting layer 40, second reflecting layer 40 is Bragg reflecting layer, by
SiO2、Si3N4、Al2O3、TiO2、Ta2O3One or more of material be made.For the ease of further adjusting the second reflecting layer 40
Reflectivity, second reflecting layer 40 is multilayered structure, anti-to adjust second by adjusting the layer structure in the second reflecting layer 40
Penetrate the reflectivity of layer 40.
It is the structural schematic diagram of LED chip embodiment two of the present invention referring to Fig. 3, Fig. 3, the current-carrying of LED chip in order to prevent
Son flocks together, the light extraction efficiency of high chip, and the light emitting structure is between the second semiconductor layer 23 and the first reflecting layer 24
Provided with layer of transparent conductive layer 25, wherein the material of the transparency conducting layer 25 is indium tin oxide.
In order to protect LED chip, prevent chip short-circuit, the surface of the light emitting structure is additionally provided with a layer insulating 26, institute
It states insulating layer 26 and is covered on the surface in the first reflecting layer 24, the surface of exposed first semiconductor layer 21 and light emitting structure
Side, wherein first electrode 31 and second electrode 32 expose, be further ensured that first electrode 31 and second electrode 32 it
Between mutually insulated.Preferably, the insulating layer 26 is by SiO2、Si3N4、Al2O3、TiO2And Ta2O3One or more of be made.
Referring to fig. 4, Fig. 4 is production method flow chart of the present invention for the LED chip of display backlight module, the present invention
A kind of production method of LED chip for display backlight module of offer, includes the following steps；
S101, substrate is provided.
The material of the substrate can be sapphire, silicon carbide or silicon, or other semiconductor materials, the present embodiment
In substrate be preferably Sapphire Substrate.
S102, light emitting structure is formed in substrate surface, the light emitting structure includes the first semiconductor set on substrate surface
Layer, active layer and first electrode on the first semiconductor layer, the second semiconductor layer on active layer are set to the second half
The first reflecting layer in conductor layer, and the second electrode on the first reflecting layer.
Formed light emitting structure the following steps are included:
S201, substrate surface formed epitaxial layer, the epitaxial layer include the first semiconductor layer being sequentially arranged on substrate,
Active layer and the second semiconductor layer.
Specifically, the first semiconductor layer provided by the embodiments of the present application and the second semiconductor layer are gallium nitride-based semiconductor
Layer, active layer are gallium nitride base active layer；In addition, the first semiconductor layer provided by the embodiments of the present application, the second semiconductor layer and
The material of active layer can also be other materials, be not particularly limited to this application.
Wherein, the first semiconductor layer can be n type semiconductor layer, then the second semiconductor layer is p type semiconductor layer；Alternatively,
First semiconductor layer is p type semiconductor layer, and the second semiconductor layer is n type semiconductor layer, for the first semiconductor layer and second
The conduction type of semiconductor layer needs to be designed according to practical application, is not particularly limited to this application.
It should be noted that being set between the substrate and first semiconductor layer in the other embodiments of the application
There is caching to rush layer (not shown).
S202, the epitaxial layer is performed etching, forms the exposed region for being etched to the first semiconductor layer.
Specifically, using photoresist or SiO2As exposure mask, and use inductively coupled plasma etching technique or reaction
Ion etching etching technics performs etching the epitaxial layer, through second semiconductor layer and active layer and extends to described
First semiconductor layer exposes first semiconductor layer, to form exposed region.Due to photoresist and SiO2Have
High etching ratio, convenient for etching, so that the etching pattern needed for being formed, improves the precision of etching.In the other embodiments of the application
In, it can also be using the substance of other high etching selection ratios as exposure mask.
In order to improve the light extraction efficiency of chip, the side light extraction efficiency of epitaxial layer is improved, the shape of the exposed region is
Inverted trapezoidal.In the other embodiments of the application, the shape of the exposed region can also be polygon.
S203, the first reflecting layer is formed on second semiconductor layer.
Using photoresist or SiO2As exposure mask, by electron beam evaporation plating or magnetron sputtering depositing operation, described second
The first reflecting layer is formed on semiconductor layer.
Specifically, first reflecting layer is made of Ag.Preferably, first reflecting layer further includes in Ti, W, N and Ni
One or more of metals.Above-mentioned element is added in the first reflecting layer can not only improve the luminous reflectanc in the first reflecting layer,
And the transfer ability of Ag can also be lowered, prevent the voltage of chip from increasing, leak electricity short-circuit.
S204, the deposited metal on the first semiconductor layer of exposed region form first electrode, sink on the first reflecting layer
Product metal, forms second electrode.
Gold is deposited on the first semiconductor layer of exposed region using electron beam evaporation plating, hot evaporation or magnetron sputtering technique
Belong to, form first electrode, the deposited metal on the first reflecting layer forms second electrode.Wherein, first electrode and second electrode are equal
It is made of two or more metal in Cr, Al, Ni, Ti, Pt and Au.
It should be noted that in other embodiments of the invention, the LED chip further includes being equipped with the second semiconductor layer
And the first transparency conducting layer between reflecting layer, and the insulating layer set on light emitting structure surface.
Specifically, being formed before the first reflecting layer, after forming the second semiconductor layer using photoresist or SiO2As
Layer of transparent conductive layer is deposited in second semiconductor layer surface using electron beam evaporation process in exposure mask.Wherein, temperature is deposited
It is 0-300 DEG C, oxygen flow 5-30sccm, vapor deposition chamber vacuum degree is 3.0-10.0E-5, evaporation time 100-
300min.When temperature is deposited lower than 0 DEG C, transparency conducting layer can not obtain enough energy and be migrated, and the transparent of formation is led
Electric layer is second-rate, and defect is more；When temperature is deposited higher than 300 DEG C, temperature is excessively high, and film energy is excessive to be not easy in epitaxial layer
Upper deposition, deposition rate is slack-off, and efficiency reduces.When oxygen flow is less than 5sccm, oxygen flow is too low, transparency conducting layer oxidation
Insufficient, film quality is bad, and when oxygen flow is greater than 30sccm, oxygen flow is too big, transparency conducting layer excessive oxidation, film layer
Defect concentration increases.When evaporation time is less than 100min, film needs higher deposition rate to can be only achieved required thickness, deposits
Rate is too fast, and atom has little time to migrate, therefore film growth quality is poor, and defect is more.Preferably, vapor deposition temperature is 290 DEG C, oxygen
Throughput is 10sccm, and vapor deposition chamber vacuum degree is 3.0*10-5-10.0*10-5。
Wherein, the material of the transparency conducting layer is indium tin oxide, but not limited to this.Indium and tin in indium tin oxide
Ratio is 70-99:1-30.Preferably, the ratio of indium and tin is 95:5 in indium tin oxide.Transparency conducting layer is favorably improved in this way
Conductive capability, prevent carrier from flocking together, also improve chip light extraction efficiency.
Specifically, after formation of the electrodes, being formed before the second reflecting layer, using chemical vapor deposition process or physics gas
Phase depositing operation forms insulating layer on the surface of the light emitting structure.Wherein, the insulating layer is covered on the table in the first reflecting layer
The side in face, the surface of exposed first semiconductor layer and light emitting structure.Finally the insulating layer is performed etching, it will
First electrode and second electrode expose.Insulating layer of the invention is for protecting light emitting structure, so that first electrode and second
Electrode mutually insulated avoids chip that short circuit occurs.Preferably, the insulating layer is by SiO2、Si3N4、Al2O3、TiO2And Ta2O3In
One or more be made.
S104, it is cut at the back side of the substrate along the edge of light emitting structure, forms cutting through the substrate
It cuts.
It is cut in the substrate back along the edge of light emitting structure using laser cutting parameter or cutter, formation is passed through
Wear the Cutting Road of the substrate, that is, the depth of the Cutting Road is equal to the thickness of the substrate.Preferably, the Cutting Road
Width is 10-200 microns.Preferably, the width of the Cutting Road is 50-150 microns.More preferably, the width of the Cutting Road
It is 80-120 microns.It is subsequent to be difficult to enter the material filling of coating when the width of Cutting Road is less than 10 microns, after being unfavorable for
It is continuous to form coating；When the width of Cutting Road is greater than 200 microns, the thickness of coating is too thick, and the area of substrate is reduced, substrate and hair
Photo structure, which is easy to happen, to burst apart, and the number of chips that the single wafer of reduction is cut is few, reduces yield.
S105, packing material forms coating in the Cutting Road, wherein the refractive index of coating is greater than the refraction of substrate
Rate.
Using electron beam evaporation by alumina filled in Cutting Road, form the coating.Alternatively, by liquid
Silica glass bonding material is coated in Cutting Road, forms the coating.
Due to the refractive index close of the refractive index and substrate of aluminium oxide and silica glass bonding material, and less times greater than substrate
Refractive index is more conducive to reduce the total reflection that light is projected from substrate in this way, increases light-emitting angle, expands the light beam projected from substrate
It dissipates, improves the brightness homogeneity between backlight module LED chip, and then improve the picture brightness uniformity of display.
According to Snell's law (Snell's Law), light, which is incident on the interface of different medium, can occur to reflect and reflect.
Wherein incident light and refraction light are located in approximately the same plane, and meet following relationship: n with the angle of interface normal1sinθ1-
n2sinθ2, when light injects optically thinner medium (refractive index n2 smaller medium) by optically denser medium (refractive index n1 bigger medium)
When (by substrate incident into air), if incidence angle θ 1 be greater than critical angle θ c, it may occur that total reflection.The present invention is on substrate
In addition the coating that refractive index is higher than refractive index of substrate, then light can be by optically thinner medium (refractive index n1 smaller medium) incident light
Close medium (refractive index n2 bigger medium), will not be totally reflected, therefore can increase the light-emitting angle of chip, and improve core
The light extraction efficiency of piece.
In order to reduce the volume of chip, while the total reflection that light is projected from substrate is further reduced, increases beam angle
Degree makes the beam spread projected from substrate, improves the brightness homogeneity between backlight module LED chip, and then improve display
Picture brightness uniformity, the lateral wall of the coating are concordant with the lateral wall of the first semiconductor layer and the second reflecting layer.
In order to improve the side lighting area of coating, so that chip sides go out, light is more uniform, and the side wall of the coating is recessed
Convex injustice.The coating can be corroded using the method for wet etching, make it have rough surface.
S106, the second reflecting layer is formed at the back side of substrate.
Using electron beam evaporation plating or magnetron sputtering depositing operation, deposition forms the second reflecting layer at the back side of the substrate.
Wherein, the reflectivity in the second reflecting layer is more than or equal to 99%.Second reflecting layer be Bragg reflecting layer or metallic reflector,
By SiO2、Si3N4、Al2O3、TiO2、Ta2O3, one or more of Al, Ag material is made.Preferably, second reflecting layer
For Bragg reflecting layer.For the ease of further adjusting the second reflecting layer reflectivity, second reflecting layer is multilayered structure.
LED chip of the invention, by the mutual cooperation in the first reflecting layer and the second reflecting layer, the institute that active layer is issued
There is light to issue from the side of chip, light is avoided to issue from the vertical plane of chip；And by the way that coating is arranged in the side of substrate, due to
The refractive index of coating is greater than the refractive index of substrate, to reduce the total reflection that light is projected from substrate, while increasing light-emitting angle,
Make the beam spread projected from substrate, improves the brightness homogeneity between backlight module LED chip, and then improve the picture of display
Brightness uniformity.
In order to guarantee that all light that active layer issues are issued from the side of chip, the reflectivity in second reflecting layer is greater than
The reflectivity in the first reflecting layer.Preferably, the reflectivity in the first reflecting layer is less than or equal to 80%, and the reflectivity in the second reflecting layer is big
In 99%.More preferably, the reflectivity in the first reflecting layer is less than or equal to 70%, and the reflectivity in the second reflecting layer is greater than 99%.
Referring to Fig. 5, the present invention also provides a kind of backlight module, including substrate 1, it is multiple on substrate 1 as above-mentioned
The LED chip 2 and the diffuser plate 3 above the LED chip 2.Since the light of LED chip of the present invention is all from side
Face is projected, rather than is emitted from front, so that the light projected on diffuser plate 3 is more uniform, because projecting light from chip sides
It by way of dislocation, can more uniformly project on diffuser plate 3, to reduce between LED chip 2 and diffuser plate 3
Distance reduces the thickness of light emitting module.
Above disclosed is only a preferred embodiment of the present invention, cannot limit the power of the present invention with this certainly
Sharp range, therefore equivalent changes made in accordance with the claims of the present invention, are still within the scope of the present invention.
Claims (10)
1. a kind of LED chip for display backlight module characterized by comprising
Substrate；
Set on the light emitting structure of substrate surface, the light emitting structure includes the first semiconductor layer set on substrate surface, is set to the
Active layer and first electrode in semi-conductor layer, the second semiconductor layer on active layer are set on the second semiconductor layer
The first reflecting layer, and the second electrode on the first reflecting layer；
Set on the second reflecting layer of substrate back；
Set on the coating of side of substrate；
Wherein, the refractive index of the coating is greater than the refractive index of substrate.
2. being used for the LED chip of display backlight module as described in claim 1, which is characterized in that the outside of the coating
Wall is concordant with the lateral wall of the first semiconductor layer and the second reflecting layer.
3. being used for the LED chip of display backlight module as described in claim 1, which is characterized in that the thickness of the coating
It is 10-200 microns.
4. being used for the LED chip of display backlight module as described in claim 1, which is characterized in that the coating is by aoxidizing
Aluminium or silica glass bonding material are made.
5. being used for the LED chip of display backlight module as described in claim 1, which is characterized in that the side wall of the coating
It is uneven.
6. being used for the LED chip of display backlight module as described in claim 1, which is characterized in that second reflecting layer
Reflectivity be greater than the first reflecting layer reflectivity.
7. a kind of production method of the LED chip for display backlight module characterized by comprising
Substrate is provided；
Light emitting structure is formed in substrate surface, the light emitting structure includes the first semiconductor layer set on substrate surface, is set to the
Active layer and first electrode in semi-conductor layer, the second semiconductor layer on active layer are set on the second semiconductor layer
The first reflecting layer, and the second electrode on the first reflecting layer；
It is cut at the back side of the substrate along the edge of light emitting structure, forms the Cutting Road for running through the substrate；
Packing material forms coating in the Cutting Road, wherein the refractive index of coating is greater than the refractive index of substrate；
At the back side of the substrate with the second reflecting layer is formed on coating.
8. the production method for the LED chip of display backlight module as claimed in claim 7, which is characterized in that described
The width of Cutting Road is 10-200 microns.
9. the production method for the LED chip of display backlight module as claimed in claim 7, which is characterized in that described
Coating is made of aluminium oxide or silica glass bonding material.
10. a kind of backlight module, which is characterized in that including substrate, it is multiple on the substrate as described in claim 1-6
LED chip and the diffuser plate above the LED chip.
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| WO2023124392A1 (en) * | 2021-12-29 | 2023-07-06 | 惠州视维新技术有限公司 | Light-emitting device and manufacturing method therefor, lamp board, backlight module, and display device |
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