CN108878616A - A kind of flip LED chips and preparation method thereof for backlight - Google Patents
A kind of flip LED chips and preparation method thereof for backlight Download PDFInfo
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- CN108878616A CN108878616A CN201810782951.7A CN201810782951A CN108878616A CN 108878616 A CN108878616 A CN 108878616A CN 201810782951 A CN201810782951 A CN 201810782951A CN 108878616 A CN108878616 A CN 108878616A
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- 238000002360 preparation method Methods 0.000 title abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000002310 reflectometry Methods 0.000 claims abstract description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 23
- 229910052681 coesite Inorganic materials 0.000 claims description 17
- 229910052906 cristobalite Inorganic materials 0.000 claims description 17
- 229910052682 stishovite Inorganic materials 0.000 claims description 17
- 229910052905 tridymite Inorganic materials 0.000 claims description 17
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- 229910004481 Ta2O3 Inorganic materials 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- 229910052593 corundum Inorganic materials 0.000 claims description 13
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 3
- 239000010410 layer Substances 0.000 description 226
- 238000005530 etching Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 238000001579 optical reflectometry Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 244000144992 flock Species 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The flip LED chips and preparation method thereof that the invention discloses a kind of for backlight.It include wherein substrate for the flip LED chips of backlight, set on the light emitting structure of substrate surface, the light emitting structure includes the first semiconductor layer, the first electrode on the first semiconductor layer and the active layer being set on substrate, the second semiconductor layer being sequentially arranged on active layer and transparency conducting layer and insulating layer and second electrode on transparency conducting layer；The reflectivity in the first reflecting layer on insulating layer, the first reflecting layer is less than or equal to 80%；Set on the second reflecting layer of substrate back, the reflectivity in the second reflecting layer is more than or equal to 99%；The first pad in first electrode, the second pad in second electrode.Flip LED chips of the present invention are applied in LED backlight, and can reduce chip back goes out light light intensity, and enhance chip sides goes out light light intensity, so that LED backlight is shone more uniform.
Description
Technical field
The present invention relates to LED technology field more particularly to a kind of flip LED chips and its system for backlight
Make method.
Background technique
Liquid crystal display is to show different colors, liquid crystal molecule itself by the light of liquid crystal molecule refraction backlight
It can not shine, mainly be realized by the irradiation of backlight.The backlight of most liquid crystal displays be all CCFL (
It is exactly the cold cathode ray tube that we often say), its principle is similar to our fluorescent tube.And LED backlight is then for replacing
For a Novel backlight of CCFL.
LED has the following advantages that as backlight：
Firstly, shining more evenly.Since the fluorescent tube of CCFL backlight is usually bar shaped or U-shaped, it is easy to occur shining not
Uniform problem, and LED backlight is due to the difference of principle, illuminator is evenly distributed, and worries non-uniform light no at all
Problem.
Secondly, longer life expectancy.The service life of common CCFL backlight is 50000 hours, and the service life of LED is then big
In 100000 hours.Therefore after a long time in use using the liquid crystal display of LED backlight or LCD TV, backlight
Brightness decay situation is better than CCFL backlight.
Third, the feature of environmental protection are more preferable.Using CCFL backlight, " mercury " this noxious material can not be solved forever, this is by its hair
Light principle is determined.One or two can be known by having a look at our daily white light fluorescent tubes.The fluorescent tube that we use on ordinary days contains
There are " mercury " element and the similar CCFL backlight of fluorescent tube principle that can not naturally also solve this problem.But LED does not just have
This problem.There are also a bit, the display of the display ratio CCFL backlight of LED backlight is more energy efficient, with 21.6 cun of display
For, LED backlight liquid crystal display power consumption is about the sixty percent of CCFL backlight display.
Existing LED backlight is generally made of the LED chip of inverted structure.Existing flip LED chips are generally saturating
One layer of reflecting layer is formed on bright conductive layer, the light that active layer issues is reflected into one side of substrate outgoing, to improve the bright of chip
Degree.LED backlight is made of multiple flip LED chips, has certain gap between adjacent chips, due to existing upside-down mounting
LED chip, which is concentrated, overleaf goes out light, and LED backlight is caused light and shade region occur, that is, the light-emitting surface region of chip is clear zone, phase
Region between adjacent chip is dark space, so as to cause backlight non-uniform light.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of flip LED chips for backlight, apply in LED
On backlight, it is possible to reduce the amount of light of chip back increases the amount of light of chip sides, so that LED backlight be made to shine more
Add uniformly.
Technical problem to be solved by the present invention lies in, a kind of production method of flip LED chips for backlight is provided,
Production is simple, effectively controls chip in the amount of light of each angle, keeps backlight more uniform.
In order to solve the above-mentioned technical problems, the present invention provides a kind of flip LED chips for backlight, including：
Substrate；
Set on the light emitting structure of substrate surface, the light emitting structure includes the first semiconductor layer being set on substrate, is set to
First electrode and active layer on first semiconductor layer, the second semiconductor layer being sequentially arranged on active layer and transparency conducting layer,
And insulating layer and second electrode on transparency conducting layer；
The reflectivity in the first reflecting layer on insulating layer, the first reflecting layer is less than or equal to 80%；
Set on the second reflecting layer of substrate back, the reflectivity in the second reflecting layer is more than or equal to 99%；
The first pad in first electrode, the second pad in second electrode.
As an improvement of the above scheme, first reflecting layer is Bragg reflecting layer, by SiO2、Si3N4、Al2O3、
TiO2、Ta2O3One or more of material be made.
As an improvement of the above scheme, second reflecting layer is Bragg reflecting layer or metallic reflector, by SiO2、
Si3N4、Al2O3、TiO2、Ta2O3, one or more of Al, Ag material is made.
As an improvement of the above scheme, first reflecting layer and the second reflecting layer are multilayered structure.
As an improvement of the above scheme, first reflecting layer is less than or equal to 80% to the reflectivity of the light of 400-500nm.
As an improvement of the above scheme, second reflecting layer is more than or equal to 99% to the reflectivity of the light of 400-500nm.
Correspondingly, the present invention also provides a kind of production methods of flip LED chips for backlight, including：
Substrate is provided；
It is formed on the substrate light emitting structure, the light emitting structure includes the first semiconductor layer on substrate, is set to the
First electrode and active layer in semi-conductor layer, the second semiconductor layer being sequentially arranged on active layer and transparency conducting layer, with
And insulating layer and second electrode on transparency conducting layer；
The first reflecting layer is formed on the insulating layer, the reflectivity in the first reflecting layer is less than or equal to 80%；
The second reflecting layer is formed at the back side of substrate, the reflectivity in the second reflecting layer is more than or equal to 99%；
The first pad is formed on the first electrode, forms the second pad on the second electrode.
As an improvement of the above scheme, first reflecting layer is Bragg reflecting layer, by SiO2、Si3N4、Al2O3、
TiO2、Ta2O3One or more of material be made.
As an improvement of the above scheme, second reflecting layer is Bragg reflecting layer or metallic reflector, by SiO2、
Si3N4、Al2O3、TiO2、Ta2O3, one or more of Al, Ag material is made.
As an improvement of the above scheme, first reflecting layer and the second reflecting layer are multilayered structure.
The invention has the following beneficial effects：
1, a kind of flip LED chips for backlight provided by the invention form the first reflection in the two sides of substrate respectively
Layer and the second reflecting layer, and by adjusting the reflectivity in the first reflecting layer and the second reflecting layer, so that flip LED core of the invention
Piece is applied when in LED backlight, and the back side that can reduce chip goes out light light intensity, and the side for enhancing chip goes out light light intensity, thus
LED backlight is set to shine more uniform.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the present invention for the flip LED chips of backlight；
Fig. 2 is out light schematic diagram of the present invention for the flip LED chips of backlight；
Fig. 3 is production method flow chart of the present invention for the flip LED chips of backlight；
Fig. 4 is the production method flow chart of light emitting structure of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with attached drawing
Step ground detailed description.
Referring to Fig. 1, a kind of flip LED chips for backlight provided by the invention, including substrate 10, light emitting structure 20,
First reflecting layer 30, the second reflecting layer 40, the first pad 51 and the second pad 52.Flip LED chips of the invention are applied to LED
Backlight.
The material of substrate 10 can be sapphire, silicon carbide or silicon, or other semiconductor materials, in the present embodiment
Substrate be preferably Sapphire Substrate.
Light emitting structure 20 is set to the surface of substrate 10.Light emitting structure 20 includes the first semiconductor layer set on 1 surface of substrate
21, the active layer 22 on the first semiconductor layer 21 and first electrode 24, the second semiconductor being sequentially arranged on active layer 22
Layer 23 and transparency conducting layer 26, insulating layer 27 and second electrode 25 on transparency conducting layer 26.
Specifically, the first semiconductor layer 21 provided by the embodiments of the present application and the second semiconductor layer 23 are gallium nitride base half
Conductor layer, active layer 22 are gallium nitride base active layer；In addition, the first semiconductor layer 21 provided by the embodiments of the present application, the second half
Conductor layer 23 and the material of active layer 22 can also be other materials, be not particularly limited to this application.
Wherein, the first semiconductor layer 21 can be n type semiconductor layer, then the second semiconductor layer 23 is p type semiconductor layer；Or
Person, the first semiconductor layer 21 is p type semiconductor layer, and the second semiconductor layer 23 is n type semiconductor layer, for the first semiconductor layer
21 and second semiconductor layer 23 conduction type, need to be designed according to practical application, this application be not particularly limited.
It should be noted that being equipped in the other embodiments of the application, between the substrate 1 and the epitaxial layer 2 slow
It deposits and rushes layer (not shown).
First electrode 24 and second electrode 25 are made of one or more of Cr, Al, Ni, Ti, Pt and Au metal.
The carrier of LED chip flocks together in order to prevent, the light extraction efficiency of high chip, and the light emitting structure 20 is
Layer of transparent conductive layer 26 is provided between two semiconductor layers 23 and second electrode 25, wherein the material of the transparency conducting layer 26
Matter is indium tin oxide.
In order to protect LED chip, prevent chip short-circuit, surface and the hair of transparency conducting layer 26 is arranged in the insulating layer 27
On the side wall of photo structure 20, wherein first electrode 24 and second electrode 25 expose, and first electrode 24 and second electrode 25
Mutually insulated.
The surface of insulating layer 27 is arranged in first reflecting layer 30, and the reflectivity in the first reflecting layer 30 is less than or equal to 80%.For
It is conveniently adjusted the reflectivity in the first reflecting layer 30, first reflecting layer 30 is Bragg reflecting layer, by SiO2、Si3N4、
Al2O3、TiO2、Ta2O3One or more of material be made.For the ease of further adjusting the reflectivity in the first reflecting layer 30,
First reflecting layer 30 is multilayered structure, adjusts the anti-of the first reflecting layer 30 by adjusting the layer structure in the first reflecting layer 30
Penetrate rate.Wherein, the reflectivity in the first reflecting layer 30 is adjusted with specific reference to the spacing between the size and adjacent chips of chip
It is whole.Preferably, the reflectivity in the first reflecting layer 30 is less than or equal to 70%.More preferably, the reflectivity in the first reflecting layer 30 is 30-
70%.
Since chip of the invention is applied in LED backlight, reflection of first reflecting layer 30 to the light of 400-500nm
Rate is less than or equal to 80%.Preferably, first reflecting layer 30 is less than or equal to 70% to the reflectivity of the light of 400-500nm.More
Good, first reflecting layer 30 is 30-70% to the reflectivity of the light of 400-500nm.
Second reflecting layer 40 is set to the back side of substrate 10, and the reflectivity in the second reflecting layer is more than or equal to 99%.Described second
Reflecting layer 40 is Bragg reflecting layer or metallic reflector, by SiO2、Si3N4、Al2O3、TiO2、Ta2O3, one of Al, Ag or
Different materials are made.Preferably, second reflecting layer 40 is Bragg reflecting layer.For the ease of further adjusting the second reflection
The reflectivity of layer 40, second reflecting layer 40 are multilayered structure.
Since chip of the invention is applied in LED backlight, reflection of second reflecting layer 40 to the light of 400-500nm
Rate is more than or equal to 99%.
First pad 51 is arranged in first electrode 24, and is conductively connected with first electrode 24, and the setting of the second pad is the
On two electrodes 25, and it is conductively connected with second electrode 25.
Referring to fig. 2, the light issued from active layer 22, by the mutual cooperation in the second reflecting layer 40 and the first reflecting layer 30,
Wherein, when the light reflectivity in the second reflecting layer is greater than 99%, and the first reflecting layer light reflectivity is 70%, 30% light is from core
The back side direct projection of piece comes out, and 70% light is projected from the side of chip, and the light emitting region light intensity of such chip back is controllable, will not
Highlight regions are formed, while the side output optical zone domain of chip is controllable, can be increased by adjusting the reflectivity in the first reflecting layer 30
The light intensity for few chip sides that add deduct so that the region after chip package between chip be avoided dark space occur, and then improves LED back
The uniformity of luminance of light source.
Fig. 3 is production method flow chart of the present invention for the flip LED chips of backlight, and one kind provided by the invention is used for
The production method of the flip LED chips of backlight, includes the following steps：
S101, substrate is provided.
The material of the substrate can be sapphire, silicon carbide or silicon, or other semiconductor materials, the present embodiment
In substrate be preferably Sapphire Substrate.
S102, light emitting structure being formed on the substrate, the light emitting structure includes the first semiconductor layer on substrate, if
In first electrode and active layer on the first semiconductor layer, the second semiconductor layer and the electrically conducting transparent that are sequentially arranged on active layer
Layer, second electrode and insulating layer on transparency conducting layer.
Referring to fig. 4, light emitting structure is formed to include the following steps：
S201, substrate surface formed epitaxial layer, the epitaxial layer include the first semiconductor layer being sequentially arranged on substrate,
Active layer and the second semiconductor layer.
Specifically, the first semiconductor layer provided by the embodiments of the present application and the second semiconductor layer are gallium nitride-based semiconductor
Layer, active layer are gallium nitride base active layer；In addition, the first semiconductor layer provided by the embodiments of the present application, the second semiconductor layer and
The material of active layer can also be other materials, be not particularly limited to this application.
Wherein, the first semiconductor layer can be n type semiconductor layer, then the second semiconductor layer is p type semiconductor layer；Alternatively,
First semiconductor layer is p type semiconductor layer, and the second semiconductor layer is n type semiconductor layer, for the first semiconductor layer and second
The conduction type of semiconductor layer needs to be designed according to practical application, is not particularly limited to this application.
It should be noted that being equipped with caching between the substrate and the epitaxial layer in the other embodiments of the application
Rush layer (not shown).
S202, the epitaxial layer is performed etching, forms the exposed region for being etched to the first semiconductor layer.
Specifically, using photoresist or SiO2As exposure mask, and use inductively coupled plasma etching technique or reaction
Ion etching etching technics performs etching the epitaxial layer, through second semiconductor layer and active layer and extends to described
First semiconductor layer exposes first semiconductor layer, to form exposed region.Due to photoresist and SiO2Have
High etching ratio, convenient for etching, so that the etching pattern needed for being formed, improves the precision of etching.In the other embodiments of the application
In, it can also be using the substance of other high etching selection ratios as exposure mask.Exposed region is also used in addition to being used to form first electrode
As Cutting Road.
In order to improve the light extraction efficiency of chip, the side light extraction efficiency of epitaxial layer is improved, the shape of the exposed region is
Inverted trapezoidal.In the other embodiments of the application, the shape of the exposed region can also be polygon.
S203, transparency conducting layer and insulating layer are sequentially formed on second semiconductor layer.
Using photoresist or SiO2As exposure mask, it is deposited using electron beam evaporation process in second semiconductor layer surface
Layer of transparent conductive layer.Wherein, vapor deposition temperature is 0-300 DEG C, oxygen flow 5-30sccm, and vapor deposition chamber vacuum degree is 3.0-
10.0E-5, evaporation time 100-300min.When temperature is deposited lower than 0 DEG C, transparency conducting layer can not obtain enough energy
It is migrated, the transparency conducting layer of formation is second-rate, and defect is more；When temperature is deposited higher than 300 DEG C, temperature is excessively high, film
Energy is excessive to be not easy to deposit on epitaxial layer, and deposition rate is slack-off, and efficiency reduces.When oxygen flow is less than 5sccm, oxygen stream
Measure it is too low, transparency conducting layer oxidation it is insufficient, film quality is bad, oxygen flow be greater than 30sccm when, oxygen flow is too big, thoroughly
Bright conductive layer excessive oxidation, film layer defect concentration increase.When evaporation time is less than 100min, film needs higher deposition rate
It can be only achieved required thickness, deposition rate is too fast, and atom has little time to migrate, therefore film growth quality is poor, and defect is more.It is preferred that
, vapor deposition temperature is 290 DEG C, oxygen flow 10sccm, and vapor deposition chamber vacuum degree is 3.0*10-5-10.0*10-5。
Wherein, the material of the transparency conducting layer is indium tin oxide, but not limited to this.Indium and tin in indium tin oxide
Ratio is 70-99:1-30.Preferably, the ratio of indium and tin is 95 in indium tin oxide:5.Transparency conducting layer is favorably improved in this way
Conductive capability, prevent carrier from flocking together, also improve chip light extraction efficiency.
Using chemical vapor deposition process or physical gas-phase deposition, insulation is formed on the surface of the transparency conducting layer
Layer.Wherein, the insulating layer is covered on the surface of transparency conducting layer.Insulating layer is for protecting light emitting structure, so that first electrode
With second electrode mutually insulated, avoid chip that short circuit occurs.Alternatively, insulating layer is covered on the surface of transparency conducting layer and along extremely
Transparency conducting layer, the second semiconductor layer, active layer and the first semiconductor layer side wall, so that the side wall of chip be protected,
Prevent side wall from leaking electricity in packaging and routing.In addition, the reflecting layer can only be covered on the surface of transparency conducting layer, in order to
Light extraction efficiency is improved, prevents the side wall of chip from leaking blue, reflecting layer according to actual needs, can also be covered on the side wall of light emitting structure
On.
Preferably, the insulating layer is by SiO2、Si3N4、Al2O3、TiO2And Ta2O3One or more of be made.
S204, the insulating layer is performed etching, formed through insulating layer and is etched to the first of layer at transparent layer
Hole.
S205, the deposited metal on the first semiconductor layer of exposed region form first electrode, deposit in the first hole
Metal forms second electrode.
Gold is deposited on the first semiconductor layer of exposed region using electron beam evaporation plating, hot evaporation or magnetron sputtering technique
Belong to, form first electrode, the deposited metal in the first hole forms second electrode.Wherein, first electrode and second electrode by
Two or more metal in Cr, Al, Ni, Ti, Pt and Au is made.
S103, the first reflecting layer is formed on the insulating layer.
Using electron beam evaporation plating or magnetron sputtering depositing operation, deposit to form first instead on the surface of the transparency conducting layer
Penetrate layer.Wherein, the reflectivity in the first reflecting layer is less than or equal to 80%.It is conveniently adjusted the reflectivity in the first reflecting layer, described
One reflecting layer is Bragg reflecting layer, by SiO2、Si3N4、Al2O3、TiO2、Ta2O3One or more of material be made.In order to
Convenient for further adjusting the reflectivity in the first reflecting layer, first reflecting layer is multilayered structure, by adjusting the first reflecting layer
Layer structure adjust the reflectivity in the first reflecting layer.Wherein, the reflectivity in the first reflecting layer with specific reference to chip size and
Spacing between adjacent chips is adjusted.Preferably, the reflectivity in the first reflecting layer is less than or equal to 70%.More preferably,
The reflectivity in one reflecting layer is 30-70%.
Since chip of the invention is applied in LED backlight, reflectivity of first reflecting layer to the light of 400-500nm
Less than or equal to 80%.Preferably, first reflecting layer is less than or equal to 70% to the reflectivity of the light of 400-500nm.More preferably,
First reflecting layer is 30-70% to the reflectivity of the light of 400-500nm.
S104, the second reflecting layer is formed at the back side of substrate.
Using electron beam evaporation plating or magnetron sputtering depositing operation, deposition forms the second reflecting layer at the back side of the substrate.
Wherein, the reflectivity in the second reflecting layer is more than or equal to 99%.Second reflecting layer be Bragg reflecting layer or metallic reflector,
By SiO2、Si3N4、Al2O3、TiO2、Ta2O3, one or more of Al, Ag material is made.Preferably, second reflecting layer
For Bragg reflecting layer.For the ease of further adjusting the second reflecting layer reflectivity, second reflecting layer is multilayered structure.
Since chip of the invention is applied in LED backlight, reflectivity of second reflecting layer to the light of 400-500nm
More than or equal to 99%.
The light issued from active layer 22, passes through the mutual cooperation in the second reflecting layer 40 and the first reflecting layer 30, wherein when the
The light reflectivity in two reflecting layer is greater than 99%, and when the first reflecting layer light reflectivity is 70%, and 30% light is from the back side of chip
Direct projection comes out, and 70% light is projected from the side of chip, and the light emitting region light intensity of such chip back is controllable, not will form highlighted
Region, while the side output optical zone domain of chip is controllable, can be increased or decreased by adjusting the reflectivity in the first reflecting layer 30
The light intensity of chip sides so that the region after chip package between chip be avoided dark space occur, and then improves the hair of LED backlight
Optical uniformity.
S105, the first pad is formed on the first electrode, form the second pad on the second electrode.
In order to improve the intensity of the first pad and the second pad, convenient for welding, first pad and the second pad by Au,
Two or more in Sn, Ni, Al, Ti, Cr is made.
Above disclosed is only a preferred embodiment of the present invention, cannot limit the power of the present invention with this certainly
Sharp range, therefore equivalent changes made in accordance with the claims of the present invention, are still within the scope of the present invention.
Claims (10)
1. a kind of flip LED chips for backlight, which is characterized in that including：
Substrate；
Set on the light emitting structure of substrate surface, the light emitting structure includes the first semiconductor layer being set on substrate, is set to first
First electrode and active layer on semiconductor layer, the second semiconductor layer being sequentially arranged on active layer and transparency conducting layer and
Insulating layer and second electrode on transparency conducting layer；
The reflectivity in the first reflecting layer on insulating layer, the first reflecting layer is less than or equal to 80%；
Set on the second reflecting layer of substrate back, the reflectivity in the second reflecting layer is more than or equal to 99%；
The first pad in first electrode, the second pad in second electrode.
2. being used for the flip LED chips of backlight as described in claim 1, which is characterized in that first reflecting layer is Bradley
Lattice reflecting layer, by SiO2、Si3N4、Al2O3、TiO2、Ta2O3One or more of material be made.
3. being used for the flip LED chips of backlight as claimed in claim 2, which is characterized in that second reflecting layer is Bradley
Lattice reflecting layer or metallic reflector, by SiO2、Si3N4、Al2O3、TiO2、Ta2O3, one or more of Al, Ag material is made.
4. being used for the flip LED chips of backlight as claimed in claim 3, which is characterized in that first reflecting layer and second
Reflecting layer is multilayered structure.
5. being used for the flip LED chips of backlight as described in claim 1, which is characterized in that first reflecting layer is to 400-
The reflectivity of the light of 500nm is less than or equal to 80%.
6. being used for the flip LED chips of backlight as claimed in claim 5, which is characterized in that second reflecting layer is to 400-
The reflectivity of the light of 500nm is more than or equal to 99%.
7. a kind of production method of the flip LED chips for backlight, which is characterized in that including：
Substrate is provided；
It is formed on the substrate light emitting structure, the light emitting structure includes the first semiconductor layer on substrate, is set to the first half
First electrode and active layer in conductor layer, the second semiconductor layer and transparency conducting layer, Yi Jishe being sequentially arranged on active layer
In insulating layer and second electrode on transparency conducting layer；
The first reflecting layer is formed on the insulating layer, the reflectivity in the first reflecting layer is less than or equal to 80%；
The second reflecting layer is formed at the back side of substrate, the reflectivity in the second reflecting layer is more than or equal to 99%；
The first pad is formed on the first electrode, forms the second pad on the second electrode.
8. the production method for the flip LED chips of backlight as claimed in claim 7, which is characterized in that described first is anti-
Penetrating layer is Bragg reflecting layer, by SiO2、Si3N4、Al2O3、TiO2、Ta2O3One or more of material be made.
9. the production method for the flip LED chips of backlight as claimed in claim 8, which is characterized in that described second is anti-
Penetrating layer is Bragg reflecting layer or metallic reflector, by SiO2、Si3N4、Al2O3、TiO2、Ta2O3, one or more of Al, Ag
Material is made.
10. the production method for the flip LED chips of backlight as claimed in claim 9, which is characterized in that described first is anti-
Penetrating layer and the second reflecting layer is multilayered structure.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810782951.7A CN108878616A (en) | 2018-07-17 | 2018-07-17 | A kind of flip LED chips and preparation method thereof for backlight |
| PCT/CN2019/085328 WO2020015437A1 (en) | 2018-07-17 | 2019-04-30 | Flip chip led chip for use in backlight and fabrication method therefor |
| US16/766,702 US11282985B2 (en) | 2018-07-17 | 2019-04-30 | Flip-chip LED chip used in backlight and production method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810782951.7A CN108878616A (en) | 2018-07-17 | 2018-07-17 | A kind of flip LED chips and preparation method thereof for backlight |
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| CN108878616A true CN108878616A (en) | 2018-11-23 |
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| CN201810782951.7A Pending CN108878616A (en) | 2018-07-17 | 2018-07-17 | A kind of flip LED chips and preparation method thereof for backlight |
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| CN109935674A (en) * | 2019-03-29 | 2019-06-25 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
| WO2020015437A1 (en) * | 2018-07-17 | 2020-01-23 | 佛山市国星半导体技术有限公司 | Flip chip led chip for use in backlight and fabrication method therefor |
| CN112151651A (en) * | 2020-08-21 | 2020-12-29 | 华灿光电(苏州）有限公司 | Ultraviolet light-emitting diode epitaxial wafer and preparation method thereof |
| CN113871522A (en) * | 2021-12-02 | 2021-12-31 | 江西省兆驰光电有限公司 | Lamp bead module, backlight module and electronic equipment |
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