CN101026215B - Light emitting device having vertical structure and method for manufacturing the same - Google Patents
Light emitting device having vertical structure and method for manufacturing the same Download PDFInfo
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- CN101026215B CN101026215B CN 200710084111 CN200710084111A CN101026215B CN 101026215 B CN101026215 B CN 101026215B CN 200710084111 CN200710084111 CN 200710084111 CN 200710084111 A CN200710084111 A CN 200710084111A CN 101026215 B CN101026215 B CN 101026215B
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Abstract
The present invention provides a light emitting device having vertical structure and method for manufacturing the same. The light emitting device can enhance leakage light efficiency, includes: a semiconductor layer having a first surface and a second surface, a first electrode arranged on the first surface of the semiconductor layer, a transparent conductive oxide layer arranged on the second surface of the semiconductor layer and a second electrode arranged on the transparent conductive oxide layer.
Description
The application requires the rights and interests of the korean patent application No.10-2006-0015038 of the korean patent application No.10-2006-0015037 of application on February 16th, 2006, application on February 16th, 2006, and it incorporates this paper as a reference into, as is same as this comprehensive elaboration.
Background of invention
Background technology
Light-emitting diode (LED) be well-known with current conversion Cheng Guang with luminous light emitting semiconductor device.Owing to utilize the red LED of GaAsP compound semiconductor just can on market, buy in 1962, it has been used as the light source of electronic equipment with GaP:N base green LED, is used for image and shows.
Depend on the semi-conducting material that is used to prepare this LED by this LED wavelength of light emitted.This is because luminous wavelength depends on the band gap of the semi-conducting material of energy difference between expression valence band electronics and the conduction band electron.
Gallium nitride (GaN) compound semiconductor has enjoyed attention.The GaN compound semiconductor enjoys a reason of attention to be: GaN and other element for example indium (In), aluminium (Al) etc. are used in combination, and can prepare can greening, the semiconductor layer of indigo plant or white light.
Thus, GaN is used in combination with other suitable element, can regulate and want wavelength of light emitted.Thereby, use GaN, according to the characteristic of the equipment of application of LEDs, can suitably confirm hope the material of LED.For example, can prepare the blue led that is used for optical recording or be used to replace the White LED of glow lamp.
On the other hand, the green LED of utilizing the GaP preparation to begin to develop.Because GaP is the indirect transition material that can cause that efficient reduces, so utilize the green LED of this material preparation in fact can not make the light of pure green.Yet, rely on the recent success of InGaN film growth, can prepare the green LED of high brightness.
Rely on the above-mentioned advantage and other advantage of GaN base LED, GaN base LED market is fast-developing.And LED just can buy on market in 1994 owing to the GaN base, so be able to fast development with the relevant technology of GaN base electro-optical device.
GaN base LED develops, and shows that the bright dipping emission effciency has surpassed glow lamp.Current, the efficient of GaN base LED equals the efficient of fluorescent lamp basically.Thus, can expect that GaN base LED market is with phenomenal growth.
Although the technology advances fast of GaN based semiconductor device, the preparation of GaN base device receive the very big unfavorable conditions of high production cost.This unfavorable conditions mainly relates to about the difficulty of GaN film (epitaxial loayer) growth and the follow-up cutting of finished product GaN base device.
This GaN base device is generally at sapphire (Al
2O
3) prepare on the substrate.This is that its support is carried out the GaN epitaxial growth with relative high-quality, and in wide temperature range, shows high processing characteristics because it is commercially available being fit to produce in batches the sapphire wafer of the size of GaN base device.
In addition, sapphire is a chemistry and heat-staple, and has the high-melting-point that can carry out the high temperature manufacturing process.And sapphire has high bonding energy (122.4 kcal/mol) and high-k.Aspect chemical constitution, sapphire is crystalline aluminum oxide (Al
2O
3).
Simultaneously, because sapphire is an insulating material, so the effective LED device that utilizes Sapphire Substrate (or other dielectric substrate) to make is practically limited to laterally or vertical stratification.
In transversary, be useful on all is arranged in to the Metal Contact of LED injection current on the upper surface of device architecture (or on same substrate surface).On the other hand, in vertical stratification, a Metal Contact is arranged on the upper surface, and after removing sapphire (insulation) substrate, another contact is arranged on the basal surface of device architecture.
In addition, also extensively adopted the flip-chip bonding method.According to the flip-chip bonding method, with the led chip for preparing respectively, under the condition of this led chip of upset, attached to the lower bottom base of silicon wafer that for example has good heat conductivity or ceramic substrate.
Yet there are the problem that joins with hot release efficiency difference correlation in transversary or flip-chip, because Sapphire Substrate has the thermal conductivity of about 27W/mK, cause very high thermal resistance thus.In addition, flip-chip also has the unfavorable conditions that needs a large amount of lithographic process steps, causes manufacturing process complicated thus.
For this reason, the LED device with vertical stratification seems more outstanding, removes Sapphire Substrate because said vertical stratification relates to.
In the preparation of this vertical LED structure, laser lift-off (LLO) method is used to remove Sapphire Substrate, solves the problem that is caused by Sapphire Substrate thus.
Just, as shown in Figure 1, above Sapphire Substrate 1, form the GaN film that comprises n type GaN layer 2, active layer 3 and p type GaN layer 4.Above the GaN film, form p type electrode 5.
The LLO method is applied to like the chip with the aforesaid way preparation, to remove Sapphire Substrate 1 fully.
In the LLO method, in case laser beam incident, stress just is applied on the GaN film.For Sapphire Substrate 1 and GaN film are separated from each other, must use laser beam with high-energy-density.This laser beam resolves into metallic element with GaN, that is, and and Ga, and nitrogen (N
2).
Remove after the substrate 1 as above-mentioned, as shown in Figure 2, on the n type GaN layer 2 that exposes, form n type electrode 7, with the preparation chip structure.
In this vertical LED structure, as shown in the figure, n type GaN layer 2 is arranged in the topmost portion of chip structure.For this reason, the area of the contact area of n type GaN layer 2 has influenced total luminous efficiency considerably.
Though the area reducing contact area aspect the light leakage is favourable, can there be the for example problem of operating voltage increase, because the contact area that reduces causes the all-in resistance of device to increase or electric current scatters not enough.
Because the GaN material has 2.35 refraction coefficient, thus be under 1 the air situation about directly contact at GaN material and refraction coefficient, make from the light of LED outside launch and do not have be limited to from 25 ° of vertical lines in the angle of LED inner full-reflection.
Technical field
The present invention relates to a kind of luminescent device, more specifically, relate to a kind of can the realization and strengthen the luminescent device that light leaks efficient with vertical stratification with vertical stratification, and manufacturing approach.
Summary of the invention
Thereby, the present invention relates to a kind of luminescent device and manufacturing approach thereof with vertical stratification, it has avoided one or more basically because the restriction of correlation technique and the problem that unfavorable conditions causes.
The purpose of this invention is to provide a kind of luminescent device and manufacturing approach thereof with vertical stratification; Be utilized in the transparent conductive oxide of GaN semiconductor layer top lamination; And between GaN semiconductor layer and transparent conductive oxide, forming the air-breathing metal of ohmic contact, this luminescent device can be realized the enhancing of luminous efficiency and light leakage efficient.
Other advantage of the present invention, purpose and characteristic will be in explanation subsequently part illustrate, and according to subsequently examination, part will become clearly for the those skilled in the art with ordinary skill, maybe can from practice of the present invention, obtain instruction.Structure through also specifically noting in the drawings attached in written explanation and its claim can realize and reach the object of the invention and other advantage.
In order to realize these purposes and other advantage, according to the intent of the present invention, as embodying here with broadly described, a kind of luminescent device with vertical stratification comprises: the semiconductor structure with first surface and second surface; Be arranged in first electrode on the said first surface of said semiconductor structure; Be arranged in the including transparent conducting oxide layer on the said second surface of said semiconductor structure; Be arranged in the air-breathing metal level between said semiconductor structure and the said including transparent conducting oxide layer; With second electrode that is arranged on the said including transparent conducting oxide layer.
In another aspect of this invention, a kind of have vertical stratification and get luminescent device, comprising: first electrode; Be arranged in the semiconductor structure on said first electrode; Metal level, itself and be included between at least a element in the said semiconductor structure and have reactivity; Be arranged in the including transparent conducting oxide layer on the said metal level; With second electrode that is arranged on the said including transparent conducting oxide layer.
In another aspect of this invention, a kind of method that is used to make the luminescent device with vertical stratification comprises: above substrate, form the semiconductor structure with sandwich construction; On this semiconductor structure, form first electrode; Above said first electrode, form and comprise metal or semi-conductive supporting layer; Said substrate is separated from said semiconductor structure; Above said semiconductor structure, form metal level, said metal level and be included between at least a element in the said semiconductor structure and have reactivity; Above said metal level, form including transparent conducting oxide layer; With formation second electrode on said including transparent conducting oxide layer.
It being understood that the present invention is exemplary and illustrative at preceding summary description and detailed description subsequently, and be intended to provide like desired of the present invention further specifying.
Description of drawings
Comprise accompanying drawing so that further understanding of the present invention to be provided, and incorporate accompanying drawing into and constitute the application's a part that these accompanying drawings show embodiments of the invention, and are used to explain principle of the present invention together with describing.In these figure:
Fig. 1 is the sectional view that the example of the common process that is used to make the luminescent device with vertical stratification is shown;
Fig. 2 is the sectional view that the example of the conventional luminescent device with vertical stratification is shown;
Fig. 3 to 11 is sectional views that the first embodiment of the present invention is shown, wherein:
Fig. 3 is the sectional view that illustrates according to the example of manufacturing process of the present invention;
Fig. 4 is the sectional view that illustrates according to another example of manufacturing process of the present invention;
Fig. 5 is the sectional view that the example of the luminescent device with vertical stratification constructed in accordance is shown;
Fig. 6 is the sketch map that the band structure of ITO and n type GaN is shown;
Fig. 7 is the sketch map that is illustrated in the morphogenetic band structure of bonding of ITO and n type GaN;
Fig. 8 is the sketch map that is illustrated in the band structure that forms when electric field is applied to the bonding structure of ITO and n type GaN;
Fig. 9 is the sketch map that the band structure of ZnO and n type GaN is shown;
Figure 10 is the sketch map that is illustrated in ZnO and the morphogenetic band structure of n type GaN bonding;
Figure 11 is the sketch map that is illustrated in the band structure that forms when electric field is applied to the bonding structure of ZnO and n type GaN; With
Figure 12 to 15 is sectional views that the second embodiment of the present invention is shown, wherein:
Figure 12 is the sectional view that illustrates according to the example of manufacturing process of the present invention;
Figure 13 is the sectional view that the example of the luminescent device with vertical stratification constructed in accordance is shown;
Figure 14 is the sketch map that Technology for Heating Processing is shown; With
Figure 15 is the sketch map that the band structure of ITO and GaN is shown.
Embodiment
Now will be at length with reference to the preferred embodiments of the present invention, its example is shown in the drawings.
Yet the present invention can be embodied as many different forms, and should not be interpreted as and be limited to here the embodiment that sets forth.Thereby though can carry out various modifications and form optionally to the present invention, specific embodiment of the present invention shows with the mode of example in the drawings, and will here describe in detail.Yet, should be appreciated that there is no need to be limited to concrete disclosed form of the present invention, on the contrary, the present invention should cover and fall into by all modifications in the spirit and scope of the present invention of claim definition, equivalence and replacement.
About the description of said accompanying drawing, identical Reference numeral is represented identical key element.In the drawings, for clear, exaggerated the thickness in layer and zone.
Should be appreciated that when a key element, for example layer, zone or substrate be called another key element " on " time, can perhaps can also there be intermediate elements in it directly on another key element.Also will understand, if the part of key element, for example the surface is called " inside ", and then it compares the outside of other part of this key element further from this device.
In addition, relational terms, for example " ... under " and " ... top ", here can be used for describing a layer or regional relation, shown in figure to another layer or zone.
Should be appreciated that these terms mean the different azimuth that comprises device except the orientation of describing in the drawings.Finally, term " directly " meaning is not have intermediate elements.As used herein, term " and/or " comprise one or more be associated list part arbitrarily with all combinations.
Can be used for describing different key elements, parts, zone, layer and/or part here though should be appreciated that first, second grade of term, these key elements, parts, zone, layer and/or part should not limited by these terms.
These terms only are used for distinguishing a zone, layer or part with another zone, layer or part.Thus, the first area of discussing below, layer or part can be called second area, layer or part, and be same, and under the situation that does not depart from instruction of the present invention, second area, layer or part also can be called first area, layer or part.
< first embodiment >
Hereinafter, the first embodiment of the present invention will be described with reference to the drawings.
As shown in Figure 3, in order to make luminescent device, above Sapphire Substrate 10, form the GaN semiconductor layer 20 and first electrode 30 with sandwich construction according to this embodiment.
If desired, can above p type semiconductor layer 23, form current-diffusion layer 24, as shown in Figure 4.For current-diffusion layer 24, can use In
xGa1
-xN layer or In
xGa
1-xThe N/GaN superlattice layer.
Current-diffusion layer 24 can be used for strengthening carrier mobility, and causes electric current to flow reposefully thus.In this, this current-diffusion layer is also referred to as current delivery enhancement layer (CTEL).
As stated, when transparency electrode is used as first electrode 30, utilize transparent conductive oxide, it is more favourable above current-diffusion layer 24, forming this transparency electrode.
In this structure, the work function of current-diffusion layer 24 can liken to the work function of the p type GaN semiconductor layer of p type semiconductor layer 23 is little, but can be greater than the work function of this transparency electrode.
The workfunction range of current-diffusion layer 24 and p type semiconductor layer 23 is the part crossover each other.And the workfunction range of p type semiconductor layer 23 and transparency electrode is the part crossover each other.
For the transparent conductive oxide of transparency electrode, can use tin indium oxide (ITO).Also can use other material, for example indium zinc oxide (IZO), aluminum zinc oxide (AZO), magnesia zinc (MZO) or gallium oxide zinc (GZO).
In order to realize that reflection efficiency strengthens, and can form reflecting electrode 40 above first electrode 30.Preferred reflecting electrode 40 is processed by silver (Ag) or aluminium (Al).
Simultaneously, as will be described later, in the technology of separate substrate 10 and semiconductor layer 20, also can provide support layer with support semiconductor layer 20.This supporting layer is processed by metal or the semiconductor that comprises Si.
When semiconductor layer 20 had the structure by above-mentioned order lamination, first electrode 30 was as p type electrode.
After formation comprises the luminescent device chip like semiconductor layer 20, first electrode 30 and the reflecting electrode 40 of above-mentioned formation, utilize laser lift-off (LLO) method, fully remove Sapphire Substrate 10 from the luminescent device chip.
In this LLO method, in case laser beam incident, stress just is applied to the GaN base film.In order to separate Sapphire Substrate 10 and GaN film, just semiconductor layer 20, must use the laser beam with high-energy-density.This laser beam resolves into metallic element with GaN, that is, and and Ga, and nitrogen (N
2).
Can utilize the method except that the LLO method, for example etching realizes the separation of substrate 10.
Thereafter, as shown in Figure 5, at the rollover states of structure, form including transparent conducting oxide layer 50 above the structure that after removing substrate 10, obtains.Form with metal pad forms second electrode 60 on including transparent conducting oxide layer 50.
Including transparent conducting oxide layer 50 is used for to semiconductor layer 20 supply of current effectively.Thus, can realize that luminous efficiency strengthens, light-emitting area increases and operating voltage reduces.
Just, although contact area dwindles, because the not increase of the all-in resistance of device, so realized the effective current diffusion.Thereby, can reduce operating voltage.
Thus, can form second electrode 60 with the form of for example metal pad, to have the area that reduces.Thereby second electrode 60 does not reduce light-emitting area.
Simultaneously, as shown in the figure, along with semiconductor layer 20 extends to including transparent conducting oxide layer 50 from first electrode 30, it has the structure that area increases gradually.According to this structure, can increase light and leak the angle.
Including transparent conducting oxide layer 50 is processed by ZnO.And, can use through in ZnO, adding Al or prepared AlZnO of In or InZnO as dopant.
Though ITO can be used for including transparent conducting oxide layer 50, the weak effect of including transparent conducting oxide layer 50 in this case is because possibly form the ohmic contact between the n type semiconductor layer 21 of including transparent conducting oxide layer 50 and semiconductor layer 20 deficiently.
Fig. 6 shows before bonding ITO and the n type GaN semiconductor their band structure.With reference to figure 6, ITO has the work function that is approximately 4.7eV and the about band gap Bg of 3.7eV, and GaN has the band gap of about 3.44eV.
As shown in Figure 7, when bonding has ITO and the n type GaN semiconductor of characteristic as stated, utilize conduction band, just, the Fermi level of the Fermi level of n type GaN compensation ITO is the same as conducting metal.In this case, formed the potential barrier Δ E that block electrons flows and has the 1.7eV energy level
c
Just, at bonding surface bending energy band structure, so that form the potential barrier be in conduction band at bonding surface.
When voltage (biasing) was applied to the band structure in this state, this potential barrier remained on 1.7eV, but band structure is further crooked.Thereby, as shown in Figure 8, produced the tunnel effect phenomenon in potential barrier.As a result, electric current flows.In this case, when the voltage that applies is higher, because flexibility increases, so current amount flowing increases.
When bonding ZnO and n type GaN, produced similar phenomenon.Here, ZnO has the work function of 4.2eV and the band gap Bg of 3.37eV.
Shown in figure 10, when bonding has ZnO and the n type GaN semiconductor of characteristic as stated, utilize conduction band, just, the Fermi level of the Fermi level of n type GaN compensation ZnO is the same as conducting metal.In this case, formed the potential barrier Δ E that block electrons flows and has the 1.2eV level
c
Because according to tunnel effect phenomenon electric current mobile amount and Exp [(Δ E
c)
3/2] proportional, so under the situation of ZnO and n type GaN bonding, can produce enough electric currents at lower voltage and flow.
Just, like what see from top description, the situation of utilizing ZnO with utilize the AlZnO that adds dopant or the situation of InZnO, more favourable aspect flowing at electric current.
The including transparent conducting oxide layer of being processed by aforesaid ZnO-sill 50 can improve light leakage angle widely, leaks out from the GaN material internal through this angle light.
According to simple computation, light can be that light that 2.35 GaN directly leaks into GaN outside (air) leaks the angle and is approximately 25 ° from refraction coefficient.Yet, when the ZnO-sill is used for including transparent conducting oxide layer 50, because " Sin
-1(2.07/2.35) " be 61.74 °, increased greatly so this light leaks the angle.
< second embodiment >
Hereinafter, will the second embodiment of the present invention be described referring to figs. 12 to 15.In the following description, the technology identical with first embodiment no longer is described.
Shown in figure 12, in order to make luminescent device, above Sapphire Substrate 100, form the GaN based semiconductor 200 and first electrode 300 according to present embodiment.
Shown in figure 12, semiconductor layer 200 comprises n type semiconductor layer 210, active layer 220 and p type semiconductor layer 230.In order to realize that reflection efficiency strengthens, first electrode 300 can comprise reflecting electrode 400.Can also above first electrode 300, form by metal or comprise the supporting layer that the semiconductor of Si is processed.
When semiconductor layer 200 had the structure by above-mentioned order lamination, first electrode 300 was as p type electrode.
Forming as after the above-mentioned luminescent device chip, utilize laser lift-off (LLO) method, fully remove Sapphire Substrate 100 from the luminescent device chip.
In this LLO method, in case laser beam incident, stress just is applied to the GaN base film.In order to separate Sapphire Substrate 100 and GaN film, must use laser beam with high-energy-density.This laser beam resolves into metallic element with GaN, that is, and and Ga, and nitrogen (N
2).
Shown in figure 13, utilize metal then with nitrogen getter characteristic, for example, Ti, Zr or Cr are at the air-breathing metal level 500 of the surface deposit of the n type semiconductor layer 210 that has removed substrate 100.Air-breathing metal level 500 can show the high response to nitrogen (N), and it is such as the III family of the GaN V family material in the semi-conducting material of V family.
Through this air-breathing metal that applies in a small amount or mix on the interface of n type semiconductor layer 210 or in the interface, accomplish the for example deposit of Ti, Zr or Cr of air-breathing metal.For deposition process, can optionally use diverse ways according to the convenience of technology, for example, for example sputter of PVD, the MOCVD that utilizes Organometallic precursor and ion inject.
In deposit after the air-breathing metal level 500, in order to obtain maximum light leakage effect, above air-breathing metal level 500, form including transparent conducting oxide layer 600 with suitable refraction coefficient.
Preferably clear conductive oxide layer 600 is processed by tin indium oxide (ITO).
Above semiconductor layer 200, form after air-breathing metal level 500 and the including transparent conducting oxide layer 600, shown in figure 14, heat-treat.
Know that as common shown in figure 15, transparent conductive oxide for example ITO can be not form effective ohmic contact with any one of n type GaN and p type GaN.
Yet, if aspect refraction coefficient efficiently including transparent conducting oxide layer 600 can be applied to the top layer of luminescent device with vertical stratification, the same as the structure of describing in the above, aspect the light leakage sizable advantage can be provided.
Can find out from nearest result of study, in heat treatment, on the ITO/GaN interface, observe Ga-N and decompose.Have report to say, the ohmic contact of n type GaN usually with the Ga-N surface in nitrogen react, cause this surface nitrogen shortage thus, and form ohmic contact thus.
Thereby through removing the nitrogen in the Ga-N structure, nitrogen getter metal level 500 can be realized the raising of ohm property and device stability.
As everyone knows because Ti forms the Ti-N compound easily, and Ti-N show with metal in the same conductivity, so metal for example Ti can prevent effectively to degenerate by forming the electrode characteristic that compound causes.
After forming aforesaid including transparent conducting oxide layer 600, above including transparent conducting oxide layer 600, form second electrode 700, as n type electrode.Thus, processed chip structure fully.
Thereby, can utilize ITO as including transparent conducting oxide layer 600.As a result, can improve light widely and leak the angle, leak out from the GaN material internal through this angle light.
According to simple computation, light can be that light that 2.35 GaN directly leaks into GaN outside (air) leaks the angle and is approximately 25 ° from refraction coefficient.Yet when using ITO, this light leaks the angle and is increased to 54.78 ° greatly.
Obviously, under the prerequisite that does not depart from the spirit or scope of the present invention, the present invention can do various modifications and variation for those skilled in the art.Thus, the invention is intended to cover modification of the present invention and the change within whole scopes that falls into additional claim and its equivalent.
Claims (18)
1. luminescent device with vertical stratification comprises:
Semiconductor structure with first surface and second surface;
Be arranged in first electrode on the said first surface of said semiconductor structure;
Be arranged in the including transparent conducting oxide layer on the said second surface of said semiconductor structure;
Be arranged in the air-breathing metal level between said semiconductor structure and the said including transparent conducting oxide layer; With
Be arranged in second electrode on the said including transparent conducting oxide layer.
2. according to the said luminescent device of claim 1, wherein said semiconductor structure comprises:
The p type semiconductor layer;
Be arranged in the active layer on the said p type semiconductor layer; With
Be arranged in the n type semiconductor layer on the said active layer.
3. according to the said luminescent device of claim 1, further comprise:
Be arranged in the current-diffusion layer between said semiconductor structure and said first electrode.
4. according to the said luminescent device of claim 3, wherein this current-diffusion layer comprises In
xGa
1-xN layer or In
xGa
1-xThe N/GaN superlattice layer.
5. according to the said luminescent device of claim 1, wherein said first electrode comprises reflecting electrode.
6. according to the said luminescent device of claim 1, further comprise:
Be arranged in the supporting layer on said first electrode, said supporting layer comprises metal or contains the semiconductor of Si.
7. according to the said luminescent device of claim 1, wherein along with semiconductor structure extends to including transparent conducting oxide layer, this semiconductor structure has the area that increases gradually.
8. according to the said luminescent device of claim 1, wherein this including transparent conducting oxide layer comprises the electric conducting material that refraction coefficient is higher than the refraction coefficient of GaN.
9. according to the said luminescent device of claim 1, wherein this including transparent conducting oxide layer comprises one or more among tin indium oxide (ITO), ZnO, AlZnO and the InZnO.
10. according to the said luminescent device of claim 1, wherein said air-breathing metal level comprises at least a among Ti, Zr and the Cr.
11. according to the said luminescent device of claim 1, wherein said semiconductor structure has the side surface of inclination.
12. one kind has vertical stratification and gets luminescent device, comprising:
First electrode;
Be arranged in the semiconductor structure on said first electrode;
Metal level, itself and be included between at least a element in the said semiconductor structure and have reactivity;
Be arranged in the including transparent conducting oxide layer on the said metal level; With
Be arranged in second electrode on the said including transparent conducting oxide layer.
13. according to the said luminescent device of claim 12, wherein said first electrode comprises:
Reflecting electrode; With
Be arranged in the Ohmic electrode between said reflecting electrode and the said semiconductor structure.
14. according to the said luminescent device of claim 12, wherein this metal level comprises at least a among Ti, Zr and the Cr.
15. according to the said luminescent device of claim 12, wherein said first electrode is formed on and comprises metal or contain on the semi-conductive supporting layer of Si.
16. a method that is used to make the luminescent device with vertical stratification comprises:
Above substrate, form semiconductor structure with sandwich construction;
On this semiconductor structure, form first electrode;
Above said first electrode, form and comprise metal or semi-conductive supporting layer;
Said substrate is separated from said semiconductor structure;
Above said semiconductor structure, form metal level, said metal level and be included between at least a element in the said semiconductor structure and have reactivity;
Above said metal level, form including transparent conducting oxide layer; With
On said including transparent conducting oxide layer, form second electrode.
17. the said method according to claim 16 further comprises:
This metal level of heat treatment.
18. according to the said method of claim 16, wherein this metal level utilizes a kind of formation in sputtering method, MOCVD method and the ion injection method.
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| KR20060015037A KR101198764B1 (en) | 2006-02-16 | 2006-02-16 | LED having vertical structure and the method of manufacturing the same |
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| CN102479905A (en) * | 2010-11-23 | 2012-05-30 | 孙智江 | Multi-layer conductive transparent film and method for increasing light emitting efficiency of light emitting device |
| CN102208502B (en) * | 2011-06-09 | 2012-12-12 | 中国科学院半导体研究所 | Method for making light emitting diode invisible electrode with gallium-nitride-based vertical structure |
| CN102903799B (en) * | 2011-07-28 | 2015-04-01 | 上海博恩世通光电股份有限公司 | TCO (transparent conducting oxide) conducting DBR (distributed Bragg reflector) vertical blue-light LED (light-emitting diode) chip and manufacturing method thereof |
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| KR101198764B1 (en) | 2012-11-12 |
| KR20070082338A (en) | 2007-08-21 |
| CN101026215A (en) | 2007-08-29 |
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