JP5837775B2 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

Info

Publication number
JP5837775B2
JP5837775B2 JP2011179919A JP2011179919A JP5837775B2 JP 5837775 B2 JP5837775 B2 JP 5837775B2 JP 2011179919 A JP2011179919 A JP 2011179919A JP 2011179919 A JP2011179919 A JP 2011179919A JP 5837775 B2 JP5837775 B2 JP 5837775B2
Authority
JP
Japan
Prior art keywords
emitting device
light emitting
led
led light
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011179919A
Other languages
Japanese (ja)
Other versions
JP2013042095A (en
Inventor
田中 克幸
克幸 田中
周作 望月
周作 望月
田村 量
量 田村
篤 白石
篤 白石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Holdings Co Ltd, Citizen Electronics Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Holdings Co Ltd
Priority to JP2011179919A priority Critical patent/JP5837775B2/en
Publication of JP2013042095A publication Critical patent/JP2013042095A/en
Application granted granted Critical
Publication of JP5837775B2 publication Critical patent/JP5837775B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Description

本発明はLED素子等の半導体発光素子を備えた半導体発光装置に関するものであり、詳しくは実装した半導体発光素子の発光面上に透光部材を介して反射部材を設けた半導体発光装置に関する。   The present invention relates to a semiconductor light emitting device including a semiconductor light emitting element such as an LED element, and more particularly to a semiconductor light emitting device in which a reflective member is provided on a light emitting surface of a mounted semiconductor light emitting element via a light transmitting member.

近年、LED素子(以下LEDと略記する)は半導体発光素子であるため、長寿命で優れた駆動特性を有し、さらに小型で発光効率が良く、鮮やかな発光色を有することから、カラー表示装置のバックライトや照明等に広く利用されるようになってきた。本発明においても半導体発光装置として、LED発光装置を事例として説明する。   In recent years, an LED element (hereinafter abbreviated as LED) is a semiconductor light emitting element, and therefore has a long life and excellent driving characteristics, is small in size, has high luminous efficiency, and has a bright emission color. It has come to be widely used for backlights and lighting. In the present invention, an LED light emitting device will be described as an example of the semiconductor light emitting device.

特に近年、LEDの周囲を透光部材である透光性樹脂で被覆し、さらに被覆した透光性樹脂の上面側に反射部材の層を設けたLED発光装置が提案されている。(例えば特許文献1、特許文献2)   Particularly in recent years, an LED light emitting device has been proposed in which the periphery of an LED is coated with a translucent resin as a translucent member, and a reflective member layer is provided on the top surface side of the coated translucent resin. (For example, Patent Document 1 and Patent Document 2)

以下、反射部材を透光部材の上面に配設した従来のLED発光装置に付いて説明する。なお、理解し易いように発明の趣旨を外さない範囲において図面を一部簡略化し、また部品名称も本願にそろえている。図7は特許文献1に示されたLED発光装置100の断面図であり、回路基板102の上面には配線電極103a、103bが設けられており、配線電極103aに実装固着されたLED101の電極がワイヤー104によって、配線電極103bにワイヤーボンディングされている。さらに配線電極103a、103bは回路基板102の側面を通じて回路基板102の裏面側に導かれ、駆動電極103cを形成している。   Hereinafter, a conventional LED light emitting device in which a reflecting member is disposed on the upper surface of the light transmitting member will be described. For ease of understanding, the drawings are partially simplified within the scope not departing from the spirit of the invention, and component names are also included in the present application. FIG. 7 is a cross-sectional view of the LED light emitting device 100 disclosed in Patent Document 1. Wiring electrodes 103a and 103b are provided on the upper surface of the circuit board 102, and the electrodes of the LED 101 mounted and fixed to the wiring electrode 103a are provided. The wire 104 is wire-bonded to the wiring electrode 103b. Further, the wiring electrodes 103a and 103b are guided to the back side of the circuit board 102 through the side surface of the circuit board 102 to form the drive electrode 103c.

またLED101の上面及び側面は透光性樹脂105(透光部材)により封止されており、さらに透光性樹脂105の上面には反射部材106(光遮蔽層)が設けられている。すなわちLED101の真上に放射される強い放射光を遮る位置に反射部材106を配置している。   Further, the upper surface and side surfaces of the LED 101 are sealed with a translucent resin 105 (translucent member), and a reflective member 106 (light shielding layer) is provided on the upper surface of the translucent resin 105. That is, the reflecting member 106 is arranged at a position that blocks strong radiated light emitted directly above the LED 101.

次に上記LED発光装置100の発光動作を説明する。図示しない実装基板に半田付け等により接続した回路基板102の駆動電極103cより、LED101へ駆動電流を供給するとLED101が発光する。このとき反射部材106がない場合を考える。LED101は上面及び側面方向に光を出射するとしても、上方への出射光は極めて強くなる。このため、LED101の真上が極端に強く周辺が弱い発光状態となり、照明装置にLED発光装置100を組み込むと輝度むらが生じる。つまりLDE101の中心のみ明るくて周囲は暗い照明装置となる。   Next, the light emitting operation of the LED light emitting device 100 will be described. When a drive current is supplied to the LED 101 from the drive electrode 103c of the circuit board 102 connected to a mounting board (not shown) by soldering or the like, the LED 101 emits light. Consider a case where the reflecting member 106 is not present at this time. Even if the LED 101 emits light in the upper surface and side surface directions, the upward emitted light is extremely strong. For this reason, the LED 101 is in an extremely strong light emitting state where the area directly above the LED 101 is extremely strong and the periphery is weak, and when the LED light emitting device 100 is incorporated into the lighting device, uneven brightness occurs. That is, only the center of the LDE 101 is bright and the surroundings are dark.

上記問題を解決するために、LED発光装置100では、LED101を封止している透光性樹脂105の透光樹脂上面105aに反射部材106(光遮蔽層)を設けている。すなわちLED101の真上の極端に強い放射光を反射部材106によって阻止または抑制し、さらに反射部材106によって反射させ周囲から放射させることによって、LED101の正面が局部的に明るくなるという配光むらを改善している。なお、反射部材106としては白色樹脂や金属層のようにLED101の発光を反射させる材料が使われている。   In order to solve the above problem, in the LED light emitting device 100, a reflective member 106 (light shielding layer) is provided on the translucent resin upper surface 105a of the translucent resin 105 sealing the LED 101. That is, the extremely strong radiated light directly above the LED 101 is blocked or suppressed by the reflecting member 106, and further reflected by the reflecting member 106 and radiated from the surroundings, thereby improving the uneven light distribution in which the front surface of the LED 101 becomes locally bright. doing. The reflective member 106 is made of a material that reflects light emitted from the LED 101, such as a white resin or a metal layer.

図8は特許文献2の図1に示されたLED発光装置200の断面図である。LED発光装置200は、回路基板202の上面に設けた配線電極(図示せず)にフリップチップ実装したLED201と、LED201を覆うようにして封止する透光性樹脂205と、透光性樹脂205の上面に形成した反射部材206を備えている。反射部材206は、半透過反射性の金属箔膜よりなり、蒸着またはメッキ法で形成する。反射部材206の反射率(又は透過率)及び面積、透光性樹脂205の厚み等を任意に設定することにより、正面方向の光出射量や広がり角の制御が可能となる。例えば、反射部材206を透過する透過光P1の量や側面方向へ出射する反射光P2の光路長を調節して指向特性を改善することができる。このLED発光装置200は少ない構成部品で発光ムラの緩和を行っている。   FIG. 8 is a cross-sectional view of the LED light emitting device 200 shown in FIG. The LED light emitting device 200 includes an LED 201 flip-chip mounted on a wiring electrode (not shown) provided on an upper surface of a circuit board 202, a translucent resin 205 that seals the LED 201 so as to cover the LED 201, and a translucent resin 205. A reflection member 206 formed on the upper surface of the substrate is provided. The reflection member 206 is made of a transflective metal foil film and is formed by vapor deposition or plating. By arbitrarily setting the reflectance (or transmittance) and area of the reflecting member 206, the thickness of the translucent resin 205, and the like, it is possible to control the light emission amount and the spread angle in the front direction. For example, the directivity can be improved by adjusting the amount of transmitted light P1 transmitted through the reflecting member 206 and the optical path length of the reflected light P2 emitted in the side surface direction. This LED light emitting device 200 reduces light emission unevenness with a small number of components.

特開2001−257381号公報(図1)Japanese Patent Laying-Open No. 2001-257381 (FIG. 1) 特開2004−304041号公報(図1)Japanese Patent Laying-Open No. 2004-304041 (FIG. 1)

上記引用文献1,2に記載されたLED発光装置100,200において、透光性樹脂105,205は、回路基板102,202や反射部材106,206との間で強く接着している。しかしながら、よく知られているように発光色を白色化するため透光性樹脂105,205に蛍光粒子を混入すると接着性能が低下することがある。   In the LED light emitting devices 100 and 200 described in the cited documents 1 and 2, the translucent resins 105 and 205 are strongly bonded to the circuit boards 102 and 202 and the reflecting members 106 and 206. However, as is well known, if fluorescent particles are mixed in the translucent resins 105 and 205 in order to whiten the emission color, the adhesion performance may be lowered.

そこで本発明の目的は、上記問題点を解決しようとするものであり、蛍光体を含有する透光部材(以下蛍光部材と呼ぶ)により少なくとも側面及び上面を被覆した半導体発光素子と、この半導体発光素子を搭載する回路基板と、この蛍光部材の上面に配置された反射部材とを備える半導体発光装置において、蛍光部材と回路基板及び反射部材との固着力を高めたLED発光装置を提供することである。   Accordingly, an object of the present invention is to solve the above-described problems. A semiconductor light-emitting element having at least a side surface and an upper surface covered with a light-transmitting member (hereinafter referred to as a fluorescent member) containing a phosphor, and the semiconductor light-emitting device. In a semiconductor light emitting device including a circuit board on which an element is mounted and a reflecting member disposed on the upper surface of the fluorescent member, an LED light emitting device in which the adhesion between the fluorescent member, the circuit board, and the reflecting member is increased is provided. is there.

上記目的を達成するため本発明におけるLED発光装置の構成は、下記の通りである。
蛍光部材で少なくとも側面及び上面を被覆した半導体発光素子と、該半導体発光素子を搭載する回路基板と、前記蛍光部材の上面に反射部材とを備える半導体発光装置において、前記蛍光部材の周囲であって前記回路基板と前記反射部材によって挟まれる領域に透明部材を備えると共に、前記反射部材が前記蛍光部材に比べて硬質の材料からなり、前記反射部材が前記蛍光部材に貼りついており、かつ、前記反射部材の上面に溝を有することを特徴とする。
In order to achieve the above object, the configuration of the LED light emitting device in the present invention is as follows.
In a semiconductor light emitting device comprising a semiconductor light emitting device having at least a side surface and an upper surface covered with a fluorescent member, a circuit board on which the semiconductor light emitting device is mounted, and a reflective member on the upper surface of the fluorescent member, A transparent member is provided in a region sandwiched between the circuit board and the reflective member , the reflective member is made of a harder material than the fluorescent member, the reflective member is attached to the fluorescent member, and the reflective member It has a groove on the upper surface of the member .

上記構成によれば、回路基板及び反射部材に対する蛍光部材の接着性の悪さを、蛍光部材の周囲に設けた透明部材の接着性の良さによって補償できる。   According to the above configuration, the poor adhesion of the fluorescent member to the circuit board and the reflecting member can be compensated by the good adhesion of the transparent member provided around the fluorescent member.

前記回路基板の周囲に段差部を設け、該段差部と前記透明部材が係合していると良い。   A step portion may be provided around the circuit board, and the step portion and the transparent member may be engaged with each other.

上記構成によれば、回路基板周囲の段差部に透明部材が係合することによって、さらに回路基板と透明部材の結合をより強固にすることができる。   According to the above configuration, the coupling between the circuit board and the transparent member can be further strengthened by engaging the transparent member with the step portion around the circuit board.

上記構成によれば、反射部材として取り扱い性の良い金属板や硬質の樹脂板を用いることによって製造が簡単になる。さらに板状の反射部材の上面に溝を設けることによって、反射部材と他の部材との間の熱膨張率差で生じる反りを防止することができる。   According to the said structure, manufacture becomes easy by using a metal plate with good handleability or a hard resin board as a reflecting member. Furthermore, by providing a groove on the upper surface of the plate-like reflecting member, it is possible to prevent warpage caused by a difference in thermal expansion coefficient between the reflecting member and another member.

前記反射部材が透過性を有すると良く、さらに前記反射部材が透過性の微細開口を有すると良い。   The reflective member may be transmissive, and the reflective member may have transmissive fine openings.

上記構成によれば、反射部材の透過性によって反射部材の上面側にも出射光が存在するため、この反射部材の透過率と反射率を調整することにより配光をバランスよくできる。この半導体発光装置を照明装置に組み込めば、配光が良いため照明装置としての特性が改善される。
また、反射部材に透過性の微細開口を設ける構成の場合は、反射部材として高反射性の金属板を使用することができるため、反射部材の透過率と反射率の調整をより高い精度で行うことができる。
According to the said structure, since emitted light exists also in the upper surface side of a reflection member by the transmittance | permeability of a reflection member, light distribution can be balanced by adjusting the transmittance | permeability and reflectance of this reflection member. If this semiconductor light-emitting device is incorporated in a lighting device, the light distribution is good and the characteristics of the lighting device are improved.
Further, in the case of a configuration in which a transmissive fine opening is provided in the reflective member, a highly reflective metal plate can be used as the reflective member, so that the transmittance and reflectance of the reflective member are adjusted with higher accuracy. be able to.

上記の如く本発明によれば、回路基板及び反射部材に対する蛍光樹脂の接着性の悪さを、蛍光部材の周囲に設けた透明部材の接着性の良さによって補償できる。このため、接着部分の剥がれや、接着部分からの水分侵入等によるトラブルの発生を防止することができる。   As described above, according to the present invention, the poor adhesion of the fluorescent resin to the circuit board and the reflecting member can be compensated by the good adhesion of the transparent member provided around the fluorescent member. For this reason, it is possible to prevent the occurrence of troubles due to peeling of the bonded portion or moisture intrusion from the bonded portion.

本発明の第1実施形態におけるLED発光装置を示し、(a)は断面図、(b)は上面図、(c)は側面図、(d)は下面図である。The LED light-emitting device in 1st Embodiment of this invention is shown, (a) is sectional drawing, (b) is a top view, (c) is a side view, (d) is a bottom view. 図1(a)に示すLED発光装置の出射特性を示す断面図である。It is sectional drawing which shows the emission characteristic of the LED light-emitting device shown to Fig.1 (a). 本発明の第2実施形態におけるLED発光装置を示し、(a)は断面図、(b)は上面図、(c)は側面図、(d)は下面図である。The LED light-emitting device in 2nd Embodiment of this invention is shown, (a) is sectional drawing, (b) is a top view, (c) is a side view, (d) is a bottom view. 本発明の第3実施形態におけるLED発光装置を示し、(a)は断面図、(b)は上面図、(c)は側面図、(d)は下面図である。The LED light-emitting device in 3rd Embodiment of this invention is shown, (a) is sectional drawing, (b) is a top view, (c) is a side view, (d) is a bottom view. 図4(a)に示すLED発光装置の出射特性を示す断面図である。It is sectional drawing which shows the emission characteristic of the LED light-emitting device shown to Fig.4 (a). 参考例におけるLED発光装置を示し、(a)は断面図、(b)は上面図、(c)は側面図、(d)は下面図である。The LED light-emitting device in a reference example is shown, (a) is sectional drawing, (b) is a top view, (c) is a side view, (d) is a bottom view. 従来のLED発光装置の断面図である。It is sectional drawing of the conventional LED light-emitting device. 従来のLED発光装置の断面図である。It is sectional drawing of the conventional LED light-emitting device.

(第1実施形態)
以下図面により本発明の実施形態を説明する。図1は本発明の第1実施形態におけるLED発光装置10を示し、(a)はLED発光装置10の断面図、(b)は(a)に示すLED発光装置10の上面図、(c)は側面図、(d)は下面図を示している。
(First embodiment)
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an LED light emitting device 10 according to a first embodiment of the present invention, wherein (a) is a cross-sectional view of the LED light emitting device 10, (b) is a top view of the LED light emitting device 10 shown in (a), and (c). Is a side view, and (d) is a bottom view.

図1(a)に示すLED発光装置10の断面図おいて、回路基板2の上面に設けられた2個の配線電極3aは、スルーホール電極3bを通して駆動電極3cに接続している。配線電極3aにはLED1がフリップチップ実装(以後FC実装と略記する)されており、回路基板2の周囲には段差部2dが設けられている。LED1の上面及び側面は蛍光樹脂7(蛍光部材)で被覆されており、この蛍光樹脂7の蛍光樹脂上面7aには反射部材6が接着している。この反射部材6の上面には後述する溝6aが設けられている。さらに蛍光樹脂7の周囲であって反射部材6と回路基板2の間隙となる空間には透明樹脂5が充填されている。透明樹脂5は回路基板2の段差部2dで接着することにより周辺部が強固になる。   In the cross-sectional view of the LED light emitting device 10 shown in FIG. 1A, the two wiring electrodes 3a provided on the upper surface of the circuit board 2 are connected to the drive electrode 3c through the through-hole electrode 3b. The LED 1 is flip-chip mounted (hereinafter abbreviated as FC mounting) on the wiring electrode 3 a, and a step portion 2 d is provided around the circuit board 2. The upper surface and side surfaces of the LED 1 are covered with a fluorescent resin 7 (fluorescent member), and a reflective member 6 is bonded to the fluorescent resin upper surface 7 a of the fluorescent resin 7. A groove 6 a described later is provided on the upper surface of the reflecting member 6. Further, a transparent resin 5 is filled in a space around the fluorescent resin 7 and serving as a gap between the reflecting member 6 and the circuit board 2. The transparent resin 5 is bonded at the stepped portion 2d of the circuit board 2 to strengthen the peripheral portion.

次にLED発光装置10の全体構成を図1(b)〜(d)により説明する。
図1(b)はLED発光装置10の上面図であり、(a)は(b)のA−A断面図に該当する。(b)において反射部材6としては、適度の光透過性と適度の光反射性を有することが要求されており、例えばアクリル樹脂やエポキシ樹脂に酸化チタン等の反射材を混入した白色樹脂板や金属板等である。
Next, the whole structure of the LED light-emitting device 10 is demonstrated with reference to FIG.1 (b)-(d).
FIG. 1B is a top view of the LED light emitting device 10, and FIG. 1A corresponds to the AA cross-sectional view of FIG. In (b), the reflecting member 6 is required to have an appropriate light transmittance and an appropriate light reflectivity. For example, a white resin plate in which a reflective material such as titanium oxide is mixed in an acrylic resin or an epoxy resin, It is a metal plate or the like.

また、(c)に示す側面図の如く、板状の反射部材6は蛍光樹脂7に比べて硬質の材料であり、反射部材6が蛍光樹脂7に貼りついて固定されているため、反射部材6の熱膨張係数と他の部材の熱膨張係数の差により反りが発生する恐れがある。そこで反ろうとする内部応力を分散させるため反射部材6の上面に溝6aが升目状に形成されている。さらに反射部材6の周囲及び断差部2dを含む回路基板2の周囲を透明樹脂5によって接着することにより、接着力の低下した蛍光樹脂7を補強している。(d)はLED発光装置10の下面図であり、回路基板2の下面には2個の駆動電極3cが設けられている。   Further, as shown in the side view of (c), the plate-like reflecting member 6 is made of a harder material than the fluorescent resin 7, and the reflecting member 6 is fixed to the fluorescent resin 7 so that the reflecting member 6 is fixed. There is a risk that warping may occur due to the difference between the coefficient of thermal expansion and the coefficient of thermal expansion of other members. Therefore, grooves 6a are formed in a grid shape on the upper surface of the reflecting member 6 in order to disperse the internal stress to be warped. Further, the periphery of the reflection member 6 and the periphery of the circuit board 2 including the cut-off portion 2d are adhered by the transparent resin 5, thereby reinforcing the fluorescent resin 7 having a reduced adhesive force. (D) is a bottom view of the LED light emitting device 10, and two drive electrodes 3 c are provided on the bottom surface of the circuit board 2.

次に図2によりLED発光装置10の発光動作を説明する。図2は図1に示すLED発光装置10の発光状態を示す断面図であり、構成については図1のLED発光装置10と同じであり、重複する説明は省略する。また、本実施形態においてはLED1として青色LED、蛍光樹脂7としてシリコーン樹脂にYAGを混練しLED1の青色発光を黄色光に変換するYAG蛍光樹脂を用い、LED発光装置10として白色光を出射する発光装置の事例について説明する。   Next, the light emitting operation of the LED light emitting device 10 will be described with reference to FIG. FIG. 2 is a cross-sectional view showing a light emission state of the LED light emitting device 10 shown in FIG. 1, and the configuration is the same as that of the LED light emitting device 10 of FIG. In this embodiment, the LED 1 is a blue LED, the fluorescent resin 7 is a YAG fluorescent resin that kneads YAG in a silicone resin and converts the blue light emission of the LED 1 to yellow light, and the LED light emitting device 10 emits white light. An example of the apparatus will be described.

LED発光装置10では駆動電極3cに駆動電流を供給することによってLED1が青色光Pbを発する。その青色光Pbの一部は矢印付き実線で示すように半透過性の反射部材6を透過して出射する。青色光の別の一部は反射部材6や回路基板2等で反射し、透明樹脂5を通過してLED発光装置10の側面方向に出射する。また、LED1の出射光が蛍光樹脂7中に分散したYAG粒子によって波長変換した矢印付き点線で示す黄色光Pyの一部は、反射部材6を通過して出射する。また黄色光Pyの別の一部は反射部材6や回路基板2で反射しながら透明樹脂5を通過してLED発光装置10の側面方向に出射する。なお反射せずにLED発光装置10の側面から出射する青色光Pb、黄色光Pyは図示していない。この結果LED発光装置10の上面から側面方向を含む広い範囲に青色光Pbと黄色光Pyが配光され、その合成光によって広い範囲に白色光を出射する半導体発光装置が得られる。   In the LED light emitting device 10, the LED 1 emits blue light Pb by supplying a drive current to the drive electrode 3c. A part of the blue light Pb is transmitted through the semi-transmissive reflecting member 6 and is emitted as indicated by a solid line with an arrow. Another part of the blue light is reflected by the reflecting member 6, the circuit board 2, etc., passes through the transparent resin 5, and is emitted in the side surface direction of the LED light emitting device 10. Further, a part of the yellow light Py indicated by the dotted line with an arrow obtained by converting the wavelength of the emitted light of the LED 1 by the YAG particles dispersed in the fluorescent resin 7 passes through the reflecting member 6 and is emitted. Further, another part of the yellow light Py passes through the transparent resin 5 while being reflected by the reflecting member 6 and the circuit board 2 and is emitted in the side surface direction of the LED light emitting device 10. Note that blue light Pb and yellow light Py emitted from the side surface of the LED light emitting device 10 without being reflected are not shown. As a result, a blue light Pb and a yellow light Py are distributed over a wide range including the side surface direction from the upper surface of the LED light emitting device 10, and a semiconductor light emitting device that emits white light over a wide range by the combined light is obtained.

(第2実施形態)
次に図3により本発明の第2実施形態におけるLED発光装置20について説明する。図3はLED発光装置20を示し、(a)はLED発光装置20の断面図、(b)は(a)に示すLED発光装置20の上面図、(c)は側面図、(d)は下面図を示している。
(Second Embodiment)
Next, the LED light-emitting device 20 in 2nd Embodiment of this invention is demonstrated with FIG. FIG. 3 shows the LED light emitting device 20, (a) is a cross-sectional view of the LED light emitting device 20, (b) is a top view of the LED light emitting device 20 shown in (a), (c) is a side view, and (d) is a side view. A bottom view is shown.

図3(a)に示すLED発光装20の断面図おいて、図1(a)に示す第1実施形態のLED発光装置10と異なるところは、LED発光装置10の周囲を被覆している蛍光樹脂7が回路基板2と反射部材6の間に充填されていたのに対し、LED発光装置20において蛍光樹脂7がLED1の周囲を一定の厚さで被覆しており、透明樹脂5がその外側部分、すなわち蛍光樹脂7と反射層6の間隙を含む空間に充填されていることである。なおLED発光装置20の全体構成を示す図3(b)〜(d)は第1実施形態におけるLED発光装置10の全体構成を示す図1(b)〜(d)と基本的に同じであり、重複する説明は省略する。   In the cross-sectional view of the LED light emitting device 20 shown in FIG. 3A, the difference from the LED light emitting device 10 of the first embodiment shown in FIG. While the resin 7 is filled between the circuit board 2 and the reflecting member 6, the fluorescent resin 7 covers the periphery of the LED 1 with a certain thickness in the LED light emitting device 20, and the transparent resin 5 is on the outside thereof. That is, a space including the gap between the fluorescent resin 7 and the reflective layer 6 is filled. 3B to 3D showing the entire configuration of the LED light emitting device 20 are basically the same as FIGS. 1B to 1D showing the overall configuration of the LED light emitting device 10 in the first embodiment. The overlapping description is omitted.

LED発光装置10に比べて、LED発光装置20は回路基板2と反射部材6との接着をほとんど全て透明樹脂5で行っているため、回路基板2と反射部材6との接着力が極めて強い。本実施形態では回路基板2に段差部2dを設けて係合接着を行っているが、この係合接着を行わなくても十分な強度が得られるので、必要により省略しても良い。   Compared with the LED light-emitting device 10, the LED light-emitting device 20 has almost all the adhesion between the circuit board 2 and the reflecting member 6 made of the transparent resin 5, so that the adhesive force between the circuit board 2 and the reflecting member 6 is extremely strong. In the present embodiment, the stepped portion 2d is provided on the circuit board 2 and engaged and bonded. However, sufficient strength can be obtained without performing the engaged and bonded, and may be omitted if necessary.

(第3実施形態)
次に図4により本発明の第3実施形態におけるLED発光装置30について説明する。図4はLED発光装置30を示し、(a)はLED発光装置30の断面図、(b)は(a)に示すLED発光装置30の上面図、(c)は側面図、(d)は下面図を示している。
(Third embodiment)
Next, an LED light emitting device 30 according to a third embodiment of the present invention will be described with reference to FIG. FIG. 4 shows the LED light emitting device 30, (a) is a cross-sectional view of the LED light emitting device 30, (b) is a top view of the LED light emitting device 30 shown in (a), (c) is a side view, and (d) is a side view. A bottom view is shown.

図4(a)に示すLED発光装置30の断面図おいて、図1(a)に示す第1実施形態のLED発光装置10と異なるところは、LED発光装置10における反射部材6が半透過性の白色樹脂を用いていたのに対し、LED発光装置30の反射部材46は金属板を用いており、所定の透過性を持たせるため反射部材46に複数の微細開口46aを設けたことである。   4A is different from the LED light emitting device 10 of the first embodiment shown in FIG. 1A in that the reflecting member 6 in the LED light emitting device 10 is semi-transmissive. In contrast, the reflective member 46 of the LED light emitting device 30 uses a metal plate, and the reflective member 46 is provided with a plurality of fine openings 46a in order to give a predetermined transparency. .

次にLED発光装置30の全体構成を図4(b)〜(d)により説明する。
図4(b)はLED発光装置30の上面図であり、(a)は(b)のA−A断面図に該当する。(b)において反射部材46は金属板による完全反射性と複数の微細開口46aの透光性によって半透過反射部材を構成している。
なお、図4(c)(d)は図1(c)(d)と反射部材の構成を除いて同一の構成なので、重複する説明を省略する。
Next, the overall configuration of the LED light emitting device 30 will be described with reference to FIGS.
FIG. 4B is a top view of the LED light emitting device 30, and FIG. 4A corresponds to the AA cross-sectional view of FIG. In (b), the reflecting member 46 constitutes a semi-transmissive reflecting member by the complete reflection by the metal plate and the translucency of the plurality of fine openings 46a.
4 (c) and 4 (d) are the same as FIGS. 1 (c) and 1 (d) except for the configuration of the reflecting member, and thus a duplicate description is omitted.

次に図5によりLED発光装置30の発光動作を説明する。図5は図4に示すLED発光装置30の発光状態を示す断面図であり、構成については反射部材46の構成以外は図1のLED発光装置10と同じであり、重複する説明は省略する。また、本実施形態においてもLED1として青色LED、蛍光樹脂7としてLED1の青色発光を黄色光に変換するYAG蛍光樹脂を用い、LED発光装置30として白色光を出射する事例について説明する。   Next, the light emitting operation of the LED light emitting device 30 will be described with reference to FIG. FIG. 5 is a cross-sectional view showing a light emission state of the LED light emitting device 30 shown in FIG. 4, and the configuration is the same as that of the LED light emitting device 10 of FIG. Also, in this embodiment, a case where a blue LED is used as the LED 1, a YAG fluorescent resin that converts blue light emitted from the LED 1 into yellow light is used as the fluorescent resin 7, and white light is emitted as the LED light emitting device 30 will be described.

LED発光装置30では駆動電極3cに駆動電流が供給されることによってLED1が青色光Pbを発する。その青色光Pbの一部は矢印付き実線で示すように反射部材46の微細開口46aを透過して出射し、別の一部は反射部材46や回路基板2で反射し透明樹脂5を通過してLED発光装置30の側面方向に出射する。また、LED1の青色出射光が蛍光樹脂7のYAG粒子によって波長変換された矢印付き点線で示す黄色光Pyの一部は、反射部材46の微細開口46aを通過して出射し、別の黄色光Pyの一部は反射部材6や回路基板2等で反射し、透明樹脂5を通過してLED発光装置30の側面方向に出射する。この結果LED発光装置40の上面から側面方向を含む広い範囲に青色光Pbと黄色光Pyが配光し、その合成光によって広い範囲に白色光を出射する。   In the LED light emitting device 30, the drive current is supplied to the drive electrode 3c, so that the LED 1 emits blue light Pb. A part of the blue light Pb is transmitted through the fine opening 46a of the reflecting member 46 as shown by a solid line with an arrow, and another part is reflected by the reflecting member 46 or the circuit board 2 and passes through the transparent resin 5. Then, the light is emitted in the side surface direction of the LED light emitting device 30. In addition, a part of the yellow light Py indicated by the dotted line with an arrow obtained by converting the wavelength of the blue emitted light of the LED 1 by the YAG particles of the fluorescent resin 7 passes through the fine opening 46a of the reflecting member 46 to be emitted, and another yellow light. A part of Py is reflected by the reflecting member 6, the circuit board 2, etc., passes through the transparent resin 5, and is emitted in the side surface direction of the LED light emitting device 30. As a result, the blue light Pb and the yellow light Py are distributed over a wide range including the side surface direction from the upper surface of the LED light emitting device 40, and white light is emitted over a wide range by the combined light.

上記LED発光装置30の構成として反射部材46に10個の微細開口46aを設けた事例を示したが、実際にはもっと多数の微細開口46aを設け、透過率と反射率の調整を行うものである。反射部材46として金属板に微細開口を形成しても良いし、また細かい網の目状の金属層を形成しても良い。   As an example of the configuration of the LED light emitting device 30, an example in which ten fine openings 46 a are provided in the reflecting member 46 is shown. In practice, however, a larger number of fine openings 46 a are provided to adjust transmittance and reflectance. is there. As the reflecting member 46, a fine opening may be formed in the metal plate, or a fine mesh metal layer may be formed.

第1〜3実施形態では青色LEDとYAG蛍光樹脂の事例を示したが、これに限定されるものではなく、各種の半導体発光素子及び各種の蛍光樹脂に対応できることは当然である。また第1〜3実施形態では反射部材6,46として板状のものを使用していたが、反射部材は板材に限られず、例えば反射性部粒子を混練した樹脂を蛍光樹脂及び透明樹脂に塗布したものや、メッキで形成した金属膜であっても良い。LEDの実装方法もFC実装に限定されず、電極面を上側にしてワイヤボンディングを使うフェイスアップ実装でも良い。   In the first to third embodiments, examples of the blue LED and the YAG fluorescent resin have been described. However, the present invention is not limited to this, and it is natural that the present invention can be applied to various semiconductor light emitting elements and various fluorescent resins. In the first to third embodiments, plate-like members are used as the reflecting members 6 and 46. However, the reflecting member is not limited to a plate material, and for example, a resin kneaded with reflective particles is applied to a fluorescent resin and a transparent resin. Or a metal film formed by plating. The LED mounting method is not limited to FC mounting, but may be face-up mounting using wire bonding with the electrode surface facing upward.

(参考例)
第1〜3実施形態は剛性のある回路基板2上にLED1をフリップチップ実装し、接着力の弱まった蛍光樹脂7を透明樹脂5で補強していた。次に図6により、回路基板2を持たない参考例について説明する。図6は参考例におけるLED発光装置40を示し、(a)はLED発光装置40の断面図、(b)は(a)に示すLED発光装置40の上面図、(c)は側面図、(d)は下面図を示している。
(Reference example)
In the first to third embodiments, the LED 1 is flip-chip mounted on the rigid circuit board 2, and the fluorescent resin 7 whose adhesion is weakened is reinforced with the transparent resin 5. Next, a reference example without the circuit board 2 will be described with reference to FIG. 6 shows an LED light emitting device 40 in a reference example, (a) is a cross-sectional view of the LED light emitting device 40, (b) is a top view of the LED light emitting device 40 shown in (a), (c) is a side view, d) shows a bottom view.

図6(a)に示すLED発光装置40の断面図おいて、図1(a)に示す第1実施形態のLED発光装置10と大きく異なるところは、LED発光装置10における回路基板2の代わりに、LED発光装置40において2個の電極23を反射性樹脂層22に埋設しながら底面のみ露出させている点である。最近ではLED21のダイサイズが大型化し、LED21の底面に形成した電極23のピッチでもマザー基板(実装基板)に直接実装できるようになってきた。電極23はLED21の突起電極であり、電極23を下にしてLED21は上面及び側面が蛍光樹脂7で被覆されている。蛍光樹脂7は蛍光樹脂上面7aで反射部材6と接着している。さらに蛍光樹脂7の周囲であって反射部材7と反射性樹脂層22が形成する間隙に透明樹脂5が充填されている。この場合、反射部材6は剛性を備えていることが好ましく、反射部材6と反射性樹脂層22を透明部材5に接着することにより、蛍光体を含有して接着力及び弾性が低下した蛍光樹脂7を補強している。   In the cross-sectional view of the LED light-emitting device 40 shown in FIG. 6A, a point that is greatly different from the LED light-emitting device 10 of the first embodiment shown in FIG. In the LED light emitting device 40, only the bottom surface is exposed while the two electrodes 23 are embedded in the reflective resin layer 22. Recently, the die size of the LED 21 has been increased, and the pitch of the electrodes 23 formed on the bottom surface of the LED 21 can be directly mounted on the mother board (mounting board). The electrode 23 is a protruding electrode of the LED 21, and the upper surface and the side surface of the LED 21 are covered with the fluorescent resin 7 with the electrode 23 facing down. The fluorescent resin 7 is bonded to the reflecting member 6 on the fluorescent resin upper surface 7a. Further, the transparent resin 5 is filled in the gap around the fluorescent resin 7 and formed by the reflective member 7 and the reflective resin layer 22. In this case, it is preferable that the reflecting member 6 has rigidity, and a fluorescent resin containing a phosphor and having reduced adhesive force and elasticity by bonding the reflecting member 6 and the reflective resin layer 22 to the transparent member 5. 7 is reinforced.

次にLED発光装置40の全体構成を図6(b)〜(d)により説明する。
図6(b)はLED発光装置40の上面図であり、(a)は(b)のA−A断面図に該当し、図6(b)(c)は基本的に第1実施形態における図1(b)(c)と同じであり重複する説明は省略する。
Next, the overall configuration of the LED light emitting device 40 will be described with reference to FIGS.
FIG. 6B is a top view of the LED light emitting device 40, FIG. 6A corresponds to the AA cross-sectional view of FIG. 6B, and FIGS. 6B and 6C are basically in the first embodiment. The same description as in FIGS. 1B and 1C is omitted.

図6(d)はLED発光装置40の下面図であり、反射性樹脂層22の内側の領域に電極23の露出部がある。反射性樹脂層22はLED21から出射する光や、蛍光粒子の発する光を反射する。LED発光装置40は第1〜3実施形態におけるLED発光装置10,20,30に比べて、回路基板2と反射性樹脂層22の厚さの差分だけ薄型化が可能になること、及び回路基板2がない分だけ構成部品が少ないことが利点となる。   FIG. 6D is a bottom view of the LED light emitting device 40, and the exposed portion of the electrode 23 is in the region inside the reflective resin layer 22. The reflective resin layer 22 reflects light emitted from the LED 21 and light emitted from the fluorescent particles. Compared with the LED light-emitting devices 10, 20, and 30 in the first to third embodiments, the LED light-emitting device 40 can be thinned by a difference in thickness between the circuit board 2 and the reflective resin layer 22, and the circuit board. It is an advantage that there are few components because there is no 2.

1,21,101,201 LED(半導体発光素子)
2,102,202 回路基板
2d 段差部
3a,103a,103b 配線電極
3b スルーホール電極
3c、103c 駆動電極
5 透明樹脂
6,46,106,206 反射部材
6a 溝
7 蛍光樹脂(蛍光部材)
7a 蛍光樹脂上面
10,20,30,40,100,200 LED発光装置(半導体発光装置)
22 反射性樹脂層
23 電極
46a 微細開口
105,205 透光性樹脂
105a 透光樹脂上面
Pb 青色光
Py 黄色光


1, 21, 101, 201 LED (semiconductor light emitting device)
2, 102, 202 Circuit board 2d Stepped portion 3a, 103a, 103b Wiring electrode 3b Through-hole electrode 3c, 103c Drive electrode 5 Transparent resin 6, 46, 106, 206 Reflective member 6a Groove 7 Fluorescent resin (fluorescent member)
7a Fluorescent resin upper surface 10, 20, 30, 40, 100, 200 LED light emitting device (semiconductor light emitting device)
22 Reflective resin layer 23 Electrode 46a Micro opening 105, 205 Translucent resin 105a Translucent resin upper surface Pb Blue light Py Yellow light


Claims (4)

蛍光部材で少なくとも側面及び上面を被覆した半導体発光素子と、該半導体発光素子を搭載する回路基板と、前記蛍光部材の上面に反射部材とを備える半導体発光装置において、前記蛍光部材の周囲であって前記回路基板と前記反射部材によって挟まれる領域に透明部材を備えると共に、前記反射部材が前記蛍光部材に比べて硬質の材料からなり、前記反射部材が前記蛍光部材に貼りついており、かつ、前記反射部材の上面に溝を有することを特徴とする半導体発光装置。 In a semiconductor light emitting device comprising a semiconductor light emitting device having at least a side surface and an upper surface covered with a fluorescent member, a circuit board on which the semiconductor light emitting device is mounted, and a reflective member on the upper surface of the fluorescent member, A transparent member is provided in a region sandwiched between the circuit board and the reflective member , the reflective member is made of a harder material than the fluorescent member, the reflective member is attached to the fluorescent member, and the reflective member A semiconductor light emitting device comprising a groove on an upper surface of a member . 前記回路基板の周囲に段差部を設け、該段差部と前記透明部材が係合していることを特徴とする請求項1に記載の半導体発光装置。   The semiconductor light emitting device according to claim 1, wherein a step portion is provided around the circuit board, and the step portion and the transparent member are engaged with each other. 前記反射部材が透過性を有することを特徴とする請求項1または2に記載の半導体発光装置。 The semiconductor light-emitting device according to claim 1, wherein the reflective member is transmissive. 前記反射部材が透過性の微細開口を有することを特徴とする請求項3に記載の半導体発光装置。
The semiconductor light emitting device according to claim 3 , wherein the reflecting member has a transmissive minute opening.
JP2011179919A 2011-08-19 2011-08-19 Semiconductor light emitting device Active JP5837775B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011179919A JP5837775B2 (en) 2011-08-19 2011-08-19 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011179919A JP5837775B2 (en) 2011-08-19 2011-08-19 Semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JP2013042095A JP2013042095A (en) 2013-02-28
JP5837775B2 true JP5837775B2 (en) 2015-12-24

Family

ID=47890198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011179919A Active JP5837775B2 (en) 2011-08-19 2011-08-19 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JP5837775B2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI707484B (en) * 2013-11-14 2020-10-11 晶元光電股份有限公司 Light-emitting device
JP6742182B2 (en) * 2016-07-22 2020-08-19 スタンレー電気株式会社 Light emitting device
JP7164315B2 (en) * 2018-04-03 2022-11-01 シチズン電子株式会社 light emitting device
TWI767282B (en) * 2018-10-31 2022-06-11 億光電子工業股份有限公司 Lighting device and lighting module
JP7284373B2 (en) * 2018-12-28 2023-05-31 日亜化学工業株式会社 light emitting device
JP7116320B2 (en) * 2019-04-24 2022-08-10 日亜化学工業株式会社 light emitting device
TWI743540B (en) * 2019-08-22 2021-10-21 友達光電股份有限公司 Light-emitting unit and manufacturing method thereof
CN112909147A (en) * 2019-11-19 2021-06-04 深圳Tcl新技术有限公司 Quantum dot LED and preparation method thereof
JP7193740B2 (en) * 2020-04-17 2022-12-21 日亜化学工業株式会社 Method for manufacturing light-emitting device and method for manufacturing light-emitting module
JP7285439B2 (en) * 2020-11-30 2023-06-02 日亜化学工業株式会社 planar light source
DE102021129972A1 (en) * 2021-11-17 2023-05-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING OPTOELECTRONIC DEVICE

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257381A (en) * 2000-03-13 2001-09-21 Sharp Corp Light-emitting diode, manufacturing method therefor and illumination device
JP2003298115A (en) * 2002-04-05 2003-10-17 Citizen Electronics Co Ltd Light emitting diode
JP2004304041A (en) * 2003-03-31 2004-10-28 Citizen Electronics Co Ltd Light emitting diode
JP2006173196A (en) * 2004-12-13 2006-06-29 Citizen Electronics Co Ltd Light emitting device and light emitting diode using the same
JP2010045248A (en) * 2008-08-14 2010-02-25 Citizen Electronics Co Ltd Light-emitting diode
JP2010239043A (en) * 2009-03-31 2010-10-21 Citizen Holdings Co Ltd Led light source and method of manufacturing led light source
JP5485642B2 (en) * 2009-10-06 2014-05-07 シチズン電子株式会社 Light emitting diode and manufacturing method thereof

Also Published As

Publication number Publication date
JP2013042095A (en) 2013-02-28

Similar Documents

Publication Publication Date Title
JP5837775B2 (en) Semiconductor light emitting device
JP7125636B2 (en) light emitting device
JP6857496B2 (en) Light emitting device
JP5897862B2 (en) Semiconductor light emitting device
JP6493345B2 (en) Light emitting device
JP5158472B2 (en) Semiconductor light emitting device
TWI817708B (en) Light source
JP6680349B1 (en) Light emitting module
JP7174216B2 (en) Light-emitting modules and integrated light-emitting modules
JP6005953B2 (en) Light emitting device
JP2017183427A (en) Light-emitting device
TWI784376B (en) Light-emitting device and liquid crystal display device
JP7315852B2 (en) Light emitting device and surface emitting light source
JP2008244165A (en) Lighting system
TW201909452A (en) Light-emitting device, integrated light-emitting device and light-emitting module
JP7335537B2 (en) Light emitting device and surface emitting light source
JP2019145690A (en) Light-emitting device and manufacturing method of light-emitting device
TWI824121B (en) Light source device
JP2011176234A (en) Semiconductor light emitting device
JP2010225754A (en) Semiconductor light emitting device
JP5450680B2 (en) Semiconductor light emitting device
JP7189464B2 (en) light emitting device
JP7125635B2 (en) Light emitting device and surface emitting light source
KR102398384B1 (en) Light emitting diode package and method for manufacturing the same, backlight unit and liquid crystal display device using the same
KR102423437B1 (en) Light source module, backlight unit and display device using the same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140701

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20150202

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150520

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150616

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150722

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20151013

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20151106

R150 Certificate of patent or registration of utility model

Ref document number: 5837775

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250