JP5485642B2 - Light emitting diode and manufacturing method thereof - Google Patents

Light emitting diode and manufacturing method thereof Download PDF

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JP5485642B2
JP5485642B2 JP2009232132A JP2009232132A JP5485642B2 JP 5485642 B2 JP5485642 B2 JP 5485642B2 JP 2009232132 A JP2009232132 A JP 2009232132A JP 2009232132 A JP2009232132 A JP 2009232132A JP 5485642 B2 JP5485642 B2 JP 5485642B2
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light emitting
substrate
main body
body substrate
emitting diode
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JP2011082285A (en
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典和 門谷
孝一 深沢
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Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
Citizen Watch Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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Description

本発明は、金属部材をベースとして構成される表面実装型の発光ダイオード及びその製造方法に関するものである。   The present invention relates to a surface-mount type light emitting diode configured with a metal member as a base and a method for manufacturing the same.

図10(a)に示すように、従来の一般的な表面実装型の発光ダイオード1は、一対の端子電極部4が形成された本体基板2と、この本体基板2上に実装され、ボンディングワイヤ5を介して前記一対の端子電極部4に接続される発光素子3と、この発光素子3を封止する透光性を有した樹脂体6とを備えて構成される。前記端子電極部4は、図10(b)に示すように、前記本体基板2の上面及び下面の一部に形成される上面電極4a及び下面電極4bと、凹設した本体基板2の側面に形成される側面電極4cとが連通したスルーホール電極となっている。このようなスルーホール電極を形成することによって、前記下面電極4bをマザーボード等の実装基板上に直接載置した状態で導通接続することができる。   As shown in FIG. 10 (a), a conventional general surface mount type light emitting diode 1 is mounted on a main body substrate 2 on which a pair of terminal electrode portions 4 are formed, and on the main body substrate 2, and is bonded to a bonding wire. The light emitting element 3 is connected to the pair of terminal electrode portions 4 via 5, and the light transmitting resin body 6 that seals the light emitting element 3 is provided. As shown in FIG. 10B, the terminal electrode portion 4 is formed on the upper surface electrode 4a and the lower surface electrode 4b formed on a part of the upper surface and the lower surface of the main body substrate 2, and on the side surface of the recessed main body substrate 2. This is a through-hole electrode in communication with the formed side electrode 4c. By forming such a through-hole electrode, the lower surface electrode 4b can be conductively connected in a state where it is directly placed on a mounting board such as a mother board.

上記発光ダイオード1は、本体基板2が絶縁性を有する樹脂材で形成されているため、スルーホール電極を形成することができるが、耐熱性や放熱性が悪いといった問題があった。近年においては、発光ダイオードが有する安定した発光特性や低消費電力性によって、蛍光灯や白熱灯に代わる照明用の光源として発光ダイオードが用いられるようになってきている。   The light-emitting diode 1 has a problem that heat resistance and heat dissipation are poor, although the through hole electrode can be formed because the main body substrate 2 is formed of an insulating resin material. In recent years, light-emitting diodes have come to be used as light sources for illumination instead of fluorescent lamps and incandescent lamps due to the stable light-emitting characteristics and low power consumption of light-emitting diodes.

このような照明用として利用する場合は、高出力タイプの発光素子が用いられるため、発光する際には、電流が多く流れ、これによって熱が発生することとなり、従来の樹脂基板では、耐熱性に問題があった。   When used for such illumination, since a high-power type light emitting element is used, a large amount of current flows when it emits light, thereby generating heat. With conventional resin substrates, heat resistance There was a problem.

そこで、高出力タイプの発光素子を用いて構成される発光ダイオードでは、軽量で耐熱性に優れたアルミニウム等の金属部材で形成された基板が多く用いられるようになってきた(特許文献1〜3)。図11は、金属部材をベースとして構成された発光ダイオード11の一例を示したものである。この発光ダイオード11は、金属部材によって形成された本体基板12と、この本体基板12の上面の端部に絶縁性の上基板12aを介して形成された一対の端子電極部14と、前記本体基板12の略中央部に実装され、ボンディングワイヤ15を介して前記端子電極部14に導通する発光素子13と、この発光素子13を封止する透光性を有した樹脂体16とを備えて構成されている。   Therefore, in light-emitting diodes configured using high-power-type light-emitting elements, a substrate formed of a metal member such as aluminum that is lightweight and has excellent heat resistance has been widely used (Patent Documents 1 to 3). ). FIG. 11 shows an example of the light-emitting diode 11 configured with a metal member as a base. The light emitting diode 11 includes a main body substrate 12 formed of a metal member, a pair of terminal electrode portions 14 formed on an end portion of the upper surface of the main body substrate 12 via an insulating upper substrate 12a, and the main body substrate. The light-emitting element 13 is mounted at a substantially central portion 12 and is electrically connected to the terminal electrode portion 14 via a bonding wire 15, and a translucent resin body 16 that seals the light-emitting element 13. Has been.

また、図12(a)に示す発光ダイオード11aは、前記本体基板12の上面及び下面に絶縁性の上基板12a及び下基板12bを設け、この上基板12aと下基板12bとが本体基板12の側面に沿って連通する一対の端子電極部14を設けて構成されている。   12A is provided with an insulating upper substrate 12a and a lower substrate 12b on the upper surface and the lower surface of the main substrate 12, and the upper substrate 12a and the lower substrate 12b are connected to the main substrate 12. A pair of terminal electrode portions 14 communicating along the side surface are provided.

前記端子電極部14は、図12(b)に示すように、前記上基板12a及び下基板12bの表面に形成される上面電極14a及び下面電極14bと、凹設した本体基板12の側面に塗布された絶縁層17を介して形成される側面電極14cとが連通したスルーホール電極となっている。このようなスルーホール電極を形成することによって、前記下面電極14bをマザーボード等の実装基板上に直接載置した状態で導通接続をすることができる(特許文献3)。   As shown in FIG. 12B, the terminal electrode portion 14 is applied to the upper surface electrode 14a and the lower surface electrode 14b formed on the surfaces of the upper substrate 12a and the lower substrate 12b, and the side surface of the recessed main substrate 12. This is a through-hole electrode in communication with the side electrode 14c formed through the insulating layer 17 formed. By forming such a through-hole electrode, it is possible to conduct conduction in a state where the lower surface electrode 14b is directly placed on a mounting substrate such as a mother board (Patent Document 3).

特開2000−309292号公報JP 2000-309292 A 特開2006−295085号公報JP 2006-295085 A 特開平10−012982号公報Japanese Patent Laid-Open No. 10-012982

上記図11に示した発光ダイオード11にあっては、本体基板12が金属部材によって形成されているため、強固であり、放熱効果に優れている。しかしながら、端子電極部14が本体基板12の上面に設けられているため、マザーボード等の実装基板上に表面実装できない。   In the light emitting diode 11 shown in FIG. 11, the main body substrate 12 is formed of a metal member, so that it is strong and has an excellent heat dissipation effect. However, since the terminal electrode portion 14 is provided on the upper surface of the main body substrate 12, it cannot be surface-mounted on a mounting substrate such as a mother board.

一方、図12に示したような構造の発光ダイオード11aにあっては、金属部材からなる本体基板12にスルーホール電極としての端子電極14を形成するために、前記本体基板12の上面及び下面全体が絶縁性の上基板12a及び下基板12bによって被覆された状態となっている。したがって、前記発光素子13が実装されている部分や本体基板12の下面における金属の露出面がなくなり、本体基板12からの放熱作用が十分に得られなくなるといった問題があった。また、前記本体基板12に対して上基板12a及び下基板12bを配設させるための製造工数やコストが多くかかるといった問題もあった。   On the other hand, in the light emitting diode 11a having the structure as shown in FIG. 12, in order to form the terminal electrode 14 as a through-hole electrode on the main body substrate 12 made of a metal member, the entire upper and lower surfaces of the main body substrate 12 are formed. Is covered with an insulating upper substrate 12a and lower substrate 12b. Therefore, there is a problem that the portion where the light emitting element 13 is mounted and the exposed surface of the metal on the lower surface of the main body substrate 12 are lost, and the heat dissipation action from the main body substrate 12 cannot be obtained sufficiently. In addition, there is a problem that it takes a lot of manufacturing steps and costs to dispose the upper substrate 12a and the lower substrate 12b with respect to the main body substrate 12.

そこで、本発明の目的は、高輝度タイプの発光素子を実装して構成した場合であっても、放熱効果が十分確保され、マザーボード等の実装基板に直接表面実装することが可能な発光ダイオード及びその製造方法を提供することである。   Accordingly, an object of the present invention is to provide a light-emitting diode that can sufficiently mount a heat dissipation effect and can be directly surface-mounted on a mounting board such as a mother board, even when a high-luminance type light-emitting element is mounted. The manufacturing method is provided.

上記課題を解決するために、本発明の発光ダイオードは、金属部材からなる本体基板と、この本体基板上に形成される発光部と、前記本体基板の一端に形成される端子電極部とを備えた発光ダイオードにおいて、前記端子電極部は、前記本体基板の上面及び下面の一端に設けられ、表面に導電膜を有する一対の絶縁基板と、この一対の絶縁基板の導電膜を含めた側面及び本体基板の側面を覆う絶縁層と、この絶縁層の表面に被覆され、前記一対の導電膜と導通するメッキ層とを備えて構成されていることを特徴とする。 In order to solve the above problems, a light emitting diode of the present invention includes a main body substrate made of a metal member, a light emitting portion formed on the main body substrate, and a terminal electrode portion formed on one end of the main body substrate. In the light emitting diode, the terminal electrode portion is provided at one end of the upper surface and the lower surface of the main body substrate, and has a pair of insulating substrates having a conductive film on the surface, and a side surface and a main body including the conductive film of the pair of insulating substrates. An insulating layer that covers the side surface of the substrate, and a plating layer that covers the surface of the insulating layer and is electrically connected to the pair of conductive films .

また、本発明の発光ダイオードの製造方法は、複数の発光ダイオードが形成可能な平面サイズを有する金属製の集合本体基板を形成し、この集合本体基板の所定箇所の上面及び下面の一部に円形状の孔部とこの孔部の周囲に導電膜が形成された絶縁基板を接合し、前記孔部に沿って前記集合本体基板を厚み方向に貫通する貫通孔を形成し、この貫通孔内に前記導電膜を含めた絶縁基板の側面までを満たすように絶縁性のレジスト材を充填して硬化させた後、このレジスト材の中心部を除去することによって、前記貫通孔の内周面にレジスト材を付着させ、このレジスト材の表面から前記集合本体基板の上面及び下面に接合されている絶縁基板の側面及び導電膜をメッキ処理することによって、集合本体基板の上面から下面に導通するスルーホールとしての端子電極を形成することを特徴とする。
Further, the method for manufacturing a light emitting diode according to the present invention includes forming a metal collective main body substrate having a planar size capable of forming a plurality of light emitting diodes, and forming a circle on a part of an upper surface and a lower surface of a predetermined portion of the collective main substrate. A hole having a shape and an insulating substrate having a conductive film formed around the hole are joined to form a through-hole penetrating the aggregate body substrate in the thickness direction along the hole, and the through-hole is formed in the through-hole. After filling and hardening an insulating resist material so as to fill up to the side surface of the insulating substrate including the conductive film, by removing the central portion of the resist material, a resist is formed on the inner peripheral surface of the through hole. depositing the timber, to conduct the sides and the conductive film of the insulating substrate are joined from the surface of the resist material on the upper and lower surfaces of the collective body substrate by plating, from the top to the bottom of the set main body substrate Suruho And forming a terminal electrode as Le.

本発明に係る発光ダイオードによれば、金属製の本体基板で形成された発光ダイオードであっても、絶縁層を介して形成されたスルーホール電極としての端子電極部を容易に形成することができる。このため、マザーボード等の実装基板にもそのまま表面実装することが可能となる。また、発光部にあっては、本体基板の金属面が露出した部分に発光素子を直接配置することができるとともに、端子電極部を除く本体基板の下面の金属面が広く露出しているので、発光時における放熱効果を高めることができる。   According to the light emitting diode according to the present invention, the terminal electrode portion as the through-hole electrode formed through the insulating layer can be easily formed even if the light emitting diode is formed of a metal main body substrate. . For this reason, it becomes possible to surface-mount as it is also on mounting boards, such as a motherboard. In addition, in the light emitting part, the light emitting element can be directly arranged on the part where the metal surface of the main body substrate is exposed, and the metal surface on the lower surface of the main body substrate excluding the terminal electrode part is widely exposed. The heat dissipation effect during light emission can be enhanced.

また、本発明に係る発光ダイオードの製造方法によれば、金属製の一枚の集合本体基板の上面及び下面に絶縁性の基板を配置するとともに、この基板が配置された部分に貫通孔を形成し、この貫通孔の内周面にレジスト材による絶縁層を形成することで、集合本体基板の上面から下面にかけて連通するスルーホール電極としての端子電極部を一括して形成することができる。   Further, according to the method for manufacturing a light emitting diode according to the present invention, an insulating substrate is disposed on the upper surface and the lower surface of a single collective body substrate made of metal, and a through hole is formed in a portion where the substrate is disposed. By forming an insulating layer made of a resist material on the inner peripheral surface of the through hole, terminal electrode portions as through-hole electrodes communicating from the upper surface to the lower surface of the collective main body substrate can be collectively formed.

本発明に係る第1実施形態の発光ダイオードの上面方向から見た斜視図である。It is the perspective view seen from the upper surface direction of the light emitting diode of 1st Embodiment which concerns on this invention. 上記発光ダイオードの下面側から見た斜視図である。It is the perspective view seen from the lower surface side of the said light emitting diode. 上記発光ダイオードの断面図である。It is sectional drawing of the said light emitting diode. 上記発光ダイオードの端子電極部の斜視図である。It is a perspective view of the terminal electrode part of the said light emitting diode. 本発明に係る第2実施形態の発光ダイオードの断面図である。It is sectional drawing of the light emitting diode of 2nd Embodiment which concerns on this invention. 上記発光ダイオードの端子電極部の斜視図である。It is a perspective view of the terminal electrode part of the said light emitting diode. 第1実施形態の発光ダイオードの第1製造方法を示す工程図である。It is process drawing which shows the 1st manufacturing method of the light emitting diode of 1st Embodiment. 第1実施形態の発光ダイオードの第2製造方法を示す工程図である。It is process drawing which shows the 2nd manufacturing method of the light emitting diode of 1st Embodiment. 第2実施形態の発光ダイオードの製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the light emitting diode of 2nd Embodiment. 樹脂基板によって構成された従来の発光ダイオードの断面図(a)及び部分斜視図(b)である。It is sectional drawing (a) and the partial perspective view (b) of the conventional light emitting diode comprised by the resin substrate. 従来の金属基板によって構成された発光ダイオードの断面図である。It is sectional drawing of the light emitting diode comprised by the conventional metal substrate. 従来の金属基板によって構成された他の発光ダイオードの断面図(a)及び部分斜視図(b)である。It is sectional drawing (a) and the partial perspective view (b) of the other light emitting diode comprised with the conventional metal substrate.

以下、添付図面に基づいて本発明に係る発光ダイオードの実施形態を詳細に説明する。図1及び図2に示すように、本発明の第1実施形態の発光ダイオード21は、金属部材からなる平板状の本体基板22と、この本体基板22の略中央部に設けられる発光部23と、前記本体基板22の端部に設けられる複数の端子電極部24とを備えて構成されている。   Hereinafter, embodiments of a light emitting diode according to the present invention will be described in detail with reference to the accompanying drawings. As shown in FIGS. 1 and 2, the light emitting diode 21 according to the first embodiment of the present invention includes a flat plate-like main body substrate 22 made of a metal member, and a light emitting portion 23 provided at a substantially central portion of the main body substrate 22. And a plurality of terminal electrode portions 24 provided at the end of the main body substrate 22.

前記本体基板22は、一例として厚みが約0.7mm程度で、耐熱性に優れた矩形状のアルミニウム材が用いられる。この本体基板22の上面の略中央部には絶縁性のリング状の壁部25が設けられ、この壁部25内に発光部23が形成される。また、前記本体基板22の対向する側面の厚み方向には、半円形状の凹設部が複数形成される。この凹設部は本体基板の上面から下面に連通するためのスルーホール電極としての端子電極部24となる。   For example, the main body substrate 22 is made of a rectangular aluminum material having a thickness of about 0.7 mm and excellent heat resistance. An insulating ring-shaped wall portion 25 is provided at a substantially central portion of the upper surface of the main body substrate 22, and a light emitting portion 23 is formed in the wall portion 25. A plurality of semicircular concave portions are formed in the thickness direction of the opposite side surfaces of the main body substrate 22. The recessed portion serves as a terminal electrode portion 24 as a through-hole electrode for communicating from the upper surface to the lower surface of the main body substrate.

前記発光部23は、図3に示すように、発光素子26と、この発光素子26を前記壁部25内に封止する透光性を有する透明又は半透明の樹脂体27とで構成されている。この樹脂体27は、発光素子26が完全に埋まるように壁部25の高さと略平行となるように充填成形される。前記本体基板22の上面には、電極パターンが形成された上基板28が前記発光素子26を実装する部分を除いて設けられる。前記発光素子26は、本体基板22の中央部の上面に直接配置され、ボンディングワイヤ29を介して上基板28にハンダ接続される。なお、本実施形態では、発光部23が単一の発光素子26で構成されているが、光量を高める場合は、2以上の複数の発光素子を用い、金属面が露出している本体基板22の上面22aに直接配置することができる。   As shown in FIG. 3, the light emitting portion 23 includes a light emitting element 26 and a transparent or translucent resin body 27 having translucency for sealing the light emitting element 26 in the wall portion 25. Yes. The resin body 27 is filled and molded so as to be substantially parallel to the height of the wall portion 25 so that the light emitting element 26 is completely buried. An upper substrate 28 on which an electrode pattern is formed is provided on the upper surface of the main body substrate 22 except for a portion where the light emitting element 26 is mounted. The light emitting element 26 is directly disposed on the upper surface of the central portion of the main body substrate 22 and is soldered to the upper substrate 28 via bonding wires 29. In the present embodiment, the light emitting unit 23 is composed of a single light emitting element 26. However, when increasing the amount of light, two or more light emitting elements are used, and the main substrate 22 with the metal surface exposed. It can arrange | position directly on the upper surface 22a.

前記端子電極部24は、図4に示すように、本体基板22の上面から下面に通じるスルーホール電極となっている。この端子電極部24は、半円柱状に凹設された凹設部の上面にかかる上基板28の一部と、前記凹設部の下面に設けられる下基板30と、前記上基板28及び下基板30の表面に形成される導電膜28a、30aと、前記凹設部の内周面に絶縁性のレジスト材を塗布して形成される絶縁層31と、前記導電膜28a、30a及び絶縁層31を被覆するメッキ層32とによって構成されている。   As shown in FIG. 4, the terminal electrode portion 24 is a through-hole electrode that leads from the upper surface to the lower surface of the main body substrate 22. The terminal electrode portion 24 includes a part of the upper substrate 28 that covers the upper surface of the recessed portion that is recessed in a semi-cylindrical shape, the lower substrate 30 that is provided on the lower surface of the recessed portion, the upper substrate 28, and the lower substrate 28. Conductive films 28a, 30a formed on the surface of the substrate 30, an insulating layer 31 formed by applying an insulating resist material to the inner peripheral surface of the recessed portion, the conductive films 28a, 30a, and the insulating layer And a plating layer 32 covering 31.

前記上基板28及び下基板30は、エポキシ樹脂やBTレジン等の絶縁材料によって形成され、例えば約0.1mm程度の厚みを有して前記本体基板22の上面22a及び下面22bに接着剤等によって貼付される。前記上基板28は、前述したように、発光素子26が配置されている部分を除いた本体基板22の上面22aに配置され、前記発光素子26から延びるボンディングワイヤ29の接続電極やこの接続電極から各端子電極部24に繋がる配線パターンが形成される。なお、前記本体基板22の下面22bは、マザーボード等の実装基板上に形成されている電極部に載置されるだけの平面サイズに形成される。   The upper substrate 28 and the lower substrate 30 are formed of an insulating material such as an epoxy resin or a BT resin, and have a thickness of about 0.1 mm, for example, and are attached to the upper surface 22a and the lower surface 22b of the main body substrate 22 by an adhesive or the like. Affixed. As described above, the upper substrate 28 is disposed on the upper surface 22a of the main body substrate 22 excluding the portion where the light emitting element 26 is disposed, and is connected to the connection electrode of the bonding wire 29 extending from the light emitting element 26 or the connection electrode. A wiring pattern connected to each terminal electrode portion 24 is formed. In addition, the lower surface 22b of the main body substrate 22 is formed in a planar size that can be placed on an electrode portion formed on a mounting substrate such as a mother board.

前記絶縁層31は、前記上基板28及び下基板30の一端に重なり、前記凹設部の内側面に沿うように一定の厚みを有して塗布される。この絶縁層31を設けることによって、上基板28と下基板30との間に露出する本体基板22の金属面を絶縁面とすることができる。   The insulating layer 31 is applied with a certain thickness so as to overlap one end of the upper substrate 28 and the lower substrate 30 and along the inner surface of the recessed portion. By providing the insulating layer 31, the metal surface of the main substrate 22 exposed between the upper substrate 28 and the lower substrate 30 can be used as an insulating surface.

前記メッキ層32は、導電率の高い銅箔膜によって形成され、前記導電膜28a、30a及び絶縁層31とが連通するようにして覆われる。このメッキ層32は、蒸着あるいはスパッタリング等の手段によって形成することができる。   The plating layer 32 is formed of a copper foil film having high conductivity, and is covered so that the conductive films 28a and 30a and the insulating layer 31 are in communication. The plating layer 32 can be formed by means such as vapor deposition or sputtering.

図5及び図6は第2実施形態の発光ダイオード41を示したものである。この発光ダイオード41の端子電極部44は、本体基板22の下面に絶縁用の下基板を設けず、本体基板22の側面に塗布されるレジスト材を下面22bの端部に回り込ませるようにして絶縁層31を形成し、この絶縁層31の表面に銅箔膜によるメッキ層32を形成したものである。なお、本体基板22の上面に形成される発光部23の構成は、上記第1実施形態の発光ダイオード21と同様であるため、同一の構成には同一の符号を以って示して詳細な説明を省略する。   5 and 6 show the light emitting diode 41 of the second embodiment. The terminal electrode portion 44 of the light emitting diode 41 is insulated so that the lower substrate for insulation is not provided on the lower surface of the main body substrate 22 and the resist material applied to the side surface of the main body substrate 22 wraps around the end portion of the lower surface 22b. A layer 31 is formed, and a plated layer 32 made of a copper foil film is formed on the surface of the insulating layer 31. Since the configuration of the light emitting unit 23 formed on the upper surface of the main body substrate 22 is the same as that of the light emitting diode 21 of the first embodiment, the same configuration is denoted by the same reference numeral and is described in detail. Is omitted.

上記実施形態の発光ダイオード21、41によれば、金属部材からなる本体基板22をベースとして形成されているが、本体基板22の外周部に絶縁層31を形成することによって、樹脂材で形成された本体基板に設けられるようなスルーホール電極としての端子電極部を容易に形成することができる。このため、マザーボード等の実装基板にもそのまま表面実装することが可能となる。また、発光部23にあっては、本体基板22の金属面が露出した部分に発光素子26を直接配置することができるとともに、端子電極部24、44を除く本体基板22の下面の金属面が広く露出しているので、放熱効果を向上させることができる。   According to the light emitting diodes 21 and 41 of the above embodiment, the main body substrate 22 made of a metal member is used as a base, but the insulating layer 31 is formed on the outer peripheral portion of the main body substrate 22 to be formed of a resin material. A terminal electrode portion as a through-hole electrode as provided on the main body substrate can be easily formed. For this reason, it becomes possible to surface-mount as it is also on mounting boards, such as a motherboard. Further, in the light emitting portion 23, the light emitting element 26 can be directly disposed on the exposed portion of the metal surface of the main body substrate 22, and the metal surface on the lower surface of the main body substrate 22 excluding the terminal electrode portions 24 and 44 is provided. Since it is widely exposed, the heat dissipation effect can be improved.

次に、図7に基づいて、端子電極部を中心とした上記第1実施形態に係る発光ダイオード21の第1の製造方法について説明する。最初に発光ダイオード21を複数同時に形成可能な平面サイズを有するアルミニウム板からなる集合本体基板52を形成し、この集合本体基板52の端子電極部24となる部分の上面及び下面に導電膜28a、30aが形成された上基板28及び下基板30を装着する(工程a)。前記上基板28及び下基板30には予め中央部に円形状の孔部53が形成され、この孔部53を除いた表面に銅箔膜を蒸着させた導電層28a、30aを形成する。   Next, based on FIG. 7, the 1st manufacturing method of the light emitting diode 21 which concerns on the said 1st Embodiment centering on a terminal electrode part is demonstrated. First, a collective body substrate 52 made of an aluminum plate having a planar size capable of simultaneously forming a plurality of light emitting diodes 21 is formed, and conductive films 28a, 30a are formed on the upper and lower surfaces of portions of the collective main body substrate 52 to be terminal electrode portions 24. The upper substrate 28 and the lower substrate 30 on which are formed are mounted (step a). In the upper substrate 28 and the lower substrate 30, a circular hole 53 is formed in the center in advance, and conductive layers 28 a and 30 a are formed by depositing a copper foil film on the surface excluding the hole 53.

次に、前記上基板28及び下基板30に設けた孔部53から露出する集合本体基板52に円柱状の貫通孔54を形成し(工程b)、この貫通孔54内にレジスト材55を充填する(工程c)。このレジスト材55は、前記貫通孔54内と、この貫通孔54から突出する上基板28及び下基板30の孔部53の内周面から導電層32が設けられている高さまで充填される。   Next, a cylindrical through hole 54 is formed in the collective main body substrate 52 exposed from the hole 53 provided in the upper substrate 28 and the lower substrate 30 (step b), and the resist material 55 is filled in the through hole 54. (Step c). The resist material 55 is filled in the through hole 54 and from the inner peripheral surface of the hole 53 of the upper substrate 28 and the lower substrate 30 protruding from the through hole 54 to a height at which the conductive layer 32 is provided.

前記レジスト材55が硬化した後、このレジスト材55の中心部を貫通するような開口56を設ける(工程d)。この開口56は、前記貫通孔54の内径よりも小さく設定されるため、集合本体基板52の内側面から上基板28及び下基板30の孔部53の内側面にかけて一定厚みのレジスト材55が付着された状態となる。   After the resist material 55 is cured, an opening 56 is provided so as to penetrate the central portion of the resist material 55 (step d). Since the opening 56 is set to be smaller than the inner diameter of the through hole 54, a resist material 55 having a certain thickness adheres from the inner surface of the collective main body substrate 52 to the inner surfaces of the holes 53 of the upper substrate 28 and the lower substrate 30. It will be in the state.

次に、上基板28及び下基板30の表面に形成されている導電膜28a、30aから貫通孔54内に形成されているレジスト材55の表面を覆うようにして、蒸着法あるいはスパッタリング法等によるメッキ処理を施すことによって銅箔膜による導電層を形成する(工程e)。   Next, the surface of the resist material 55 formed in the through hole 54 is covered with the conductive films 28a, 30a formed on the surfaces of the upper substrate 28 and the lower substrate 30 by vapor deposition or sputtering. A conductive layer made of a copper foil film is formed by performing a plating process (step e).

上記工程によって端子電極部24が形成された後、集合本体基板52の上面にリング状の壁部で囲われた発光部23(図示せず)を形成する。この発光部23は、図3に示したように、集合本体基板52の上面に発光素子を配置し、ボンディングワイヤで上基板に結線した後、前記壁部内に透光性を有する透明又は半透明の樹脂体を充填することによって形成される。最後に貫通孔54を設けた箇所を中心として集合本体基板52を矩形状にダイシングすることで、個々の発光ダイオード21が完成する。   After the terminal electrode portion 24 is formed by the above process, a light emitting portion 23 (not shown) surrounded by a ring-shaped wall portion is formed on the upper surface of the collective main body substrate 52. As shown in FIG. 3, the light-emitting portion 23 has a light-emitting element disposed on the upper surface of the collective main body substrate 52 and is connected to the upper substrate with a bonding wire. It is formed by filling the resin body. Finally, the collective main body substrate 52 is diced into a rectangular shape centering on the location where the through hole 54 is provided, whereby each light emitting diode 21 is completed.

図8は端子電極部24を中心とした上記発光ダイオード21の第2の製造方法を示したものである。この製造方法では、最初に発光ダイオード21を複数同時に形成可能な平面サイズを有するアルミニウム板からなる集合本体基板52を形成し、この集合本体基板52の端子電極部24となる箇所に予め貫通孔54を開設しておく(工程a)。   FIG. 8 shows a second manufacturing method of the light emitting diode 21 with the terminal electrode portion 24 as the center. In this manufacturing method, first, an aggregate main body substrate 52 made of an aluminum plate having a planar size capable of simultaneously forming a plurality of light emitting diodes 21 is formed, and a through hole 54 is previously formed at a location to be the terminal electrode portion 24 of the aggregate main body substrate 52. Is established (step a).

次に、前記各貫通孔54を上面及び下面から挟むようにして、表面に銅箔膜60aを付着させた基板材(プリプレグ)60を装着する(工程b)。このプリプレグ60は、ガラス布に熱硬化性樹脂を含浸させた基板材であり、このプリプレグ60が装着された部分を所定の温度で加熱するとともに、所定の圧力で加圧することで、前記基板材に含浸されている半硬化状態の樹脂が溶け出し、貫通孔54内を満たす(工程c)。   Next, a substrate material (prepreg) 60 having a copper foil film 60a attached to the surface is mounted so as to sandwich each through hole 54 from the upper surface and the lower surface (step b). The prepreg 60 is a substrate material in which a glass cloth is impregnated with a thermosetting resin, and the substrate material is heated by heating a portion where the prepreg 60 is mounted at a predetermined temperature and pressurizing at a predetermined pressure. The semi-cured resin impregnated in the resin melts and fills the through hole 54 (step c).

前記貫通孔54内に溶け出した樹脂材61が硬化した後、この樹脂材61が貫通孔54内の内周面に所定の厚みで付着された状態となるように、上面から下面のプリプレグ60にかけて前記樹脂材61の中心部を円柱状に貫通する開口62を形成する(工程d)。   After the resin material 61 that has melted into the through hole 54 is cured, the prepreg 60 from the upper surface to the lower surface is placed so that the resin material 61 is attached to the inner peripheral surface of the through hole 54 with a predetermined thickness. Then, an opening 62 penetrating the central portion of the resin material 61 in a cylindrical shape is formed (step d).

最後に、前記上面及び下面のプリプレグ60の表面に形成された銅箔膜60a及びこのプリプレグ60で挟まれた貫通孔54の内周面を覆うようにしてメッキ処理を施すことによって、導電層63を形成する(工程e)。   Finally, the conductive layer 63 is plated by covering the copper foil film 60a formed on the surface of the prepreg 60 on the upper surface and the lower surface and the inner peripheral surface of the through hole 54 sandwiched between the prepregs 60. Is formed (step e).

図9は端子電極部を中心とした上記第2実施形態の発光ダイオード41の製造方法を示したものである。この製造方法では、最初に発光ダイオード41を複数同時に形成可能な平面サイズを有するアルミニウム板からなる集合本体基板52を形成し、この集合本体基板52の端子電極部24となる箇所の上面に導電膜28aが形成された上基板28を配置する(工程a)。   FIG. 9 shows a method for manufacturing the light emitting diode 41 of the second embodiment with the terminal electrode portion as the center. In this manufacturing method, first, a collective main body 52 made of an aluminum plate having a planar size capable of simultaneously forming a plurality of light emitting diodes 41 is formed, and a conductive film is formed on the upper surface of the collective main substrate 52 where the terminal electrode portion 24 is to be formed. The upper substrate 28 on which 28a is formed is disposed (step a).

次に、前記上基板28の中心部分から集合本体基板52を貫通する貫通孔54を開設し(工程b)、この貫通孔54内にレジスト材55を充填する(工程c)。このレジスト材55は、前記貫通孔54から集合本体基板52の下面に回り込むようにして充填される。   Next, a through hole 54 penetrating the collective main body substrate 52 from the central portion of the upper substrate 28 is opened (step b), and the through hole 54 is filled with a resist material 55 (step c). The resist material 55 is filled so as to go from the through hole 54 to the lower surface of the collective main body substrate 52.

前記貫通孔54内に充填して硬化したレジスト材55の中心部を貫通させて円柱状の開口56を設ける(工程d)。この開口56によって、貫通孔54の内周面に所定厚みのレジスト材55による絶縁層が形成される。   A cylindrical opening 56 is provided through the center of the resist material 55 filled and cured in the through hole 54 (step d). By this opening 56, an insulating layer made of a resist material 55 having a predetermined thickness is formed on the inner peripheral surface of the through hole 54.

最後に、前記貫通孔54の上面の周囲に露出する導電膜28aと、貫通孔54の内周面から下面の周囲に回り込むように付着されたレジスト材55の表面にメッキ処理を施すことによって、導電層32を形成する(工程e)。   Finally, the conductive film 28a exposed around the upper surface of the through hole 54 and the surface of the resist material 55 attached so as to go from the inner peripheral surface of the through hole 54 to the lower surface are plated. Conductive layer 32 is formed (step e).

以上、説明したように、本発明に係る発光ダイオードにあっては、耐熱性を持たせるために発光素子が実装される本体基板が導電性を有する金属部材で構成されているが、この本体基板の外周面に絶縁層を介した導電層によるスルーホールとしての端子電極部となっている。このため、本体基板が樹脂で形成された発光ダイオードと同様にマザーボード等の実装基板に表面実装させることができる。   As described above, in the light emitting diode according to the present invention, the main body substrate on which the light emitting element is mounted is made of a conductive metal member in order to provide heat resistance. A terminal electrode portion as a through hole is formed on the outer peripheral surface of the conductive layer through an insulating layer. For this reason, the main body substrate can be surface-mounted on a mounting substrate such as a mother board in the same manner as a light emitting diode formed of resin.

1、11、11a 発光ダイオード
2、12 本体基板
3、13 発光素子
4、14 端子電極部
4a、14a 上面電極
4b、14b 下面電極
4c、14c 側面電極
5、15 ボンディングワイヤ
6、16 樹脂体
12a 上基板
12b 下基板
21 発光ダイオード
22 本体基板
22a 上面
22b 下面
23 発光部
24 端子電極部
25 壁部
26 発光素子
27 樹脂体
28 上基板
28a 導電膜
29 ボンディングワイヤ
30 下基板
30a 導電膜
31 絶縁層
32 導電層
41 発光ダイオード
44 端子電極部
52 集合本体基板
53 孔部
54 貫通孔
55 レジスト材
56 開口
60 プリプレグ
60a 銅箔膜
61 樹脂材
62 開口
63 導電層
DESCRIPTION OF SYMBOLS 1, 11, 11a Light emitting diode 2, 12 Main body board 3, 13 Light emitting element 4, 14 Terminal electrode part 4a, 14a Upper surface electrode 4b, 14b Lower surface electrode 4c, 14c Side electrode 5, 15 Bonding wire 6, 16 Resin body 12a On Substrate 12b Lower substrate 21 Light emitting diode 22 Main substrate 22a Upper surface 22b Lower surface 23 Light emitting portion 24 Terminal electrode portion 25 Wall portion 26 Light emitting element 27 Resin body 28 Upper substrate 28a Conductive film 29 Bonding wire 30 Lower substrate 30a Conductive film 31 Insulating layer 32 Conductive Layer 41 Light-emitting diode 44 Terminal electrode portion 52 Assembly body substrate 53 Hole portion 54 Through hole 55 Resist material 56 Opening 60 Prepreg 60a Copper foil film 61 Resin material 62 Opening 63 Conductive layer

Claims (7)

金属部材からなる本体基板と、この本体基板上に形成される発光部と、前記本体基板の一端に形成される端子電極部とを備えた発光ダイオードにおいて、
前記端子電極部は、前記本体基板の上面及び下面の一端に設けられ、表面に導電膜を有する一対の絶縁基板と、
この一対の絶縁基板の導電膜を含めた側面及び本体基板の側面を覆う絶縁層と、この絶縁層の表面に被覆され、前記一対の導電膜と導通するメッキ層とを備えて構成されていることを特徴とする発光ダイオード。
In a light emitting diode comprising a main body substrate made of a metal member, a light emitting portion formed on the main body substrate, and a terminal electrode portion formed on one end of the main body substrate,
The terminal electrode portion is provided at one end of the upper surface and the lower surface of the main body substrate, and a pair of insulating substrates having a conductive film on the surface;
An insulating layer that covers the side surface of the pair of insulating substrates including the conductive film and the side surface of the main body substrate, and a plating layer that covers the surface of the insulating layer and is electrically connected to the pair of conductive films . A light emitting diode characterized by that.
金属部材からなる本体基板と、この本体基板上に形成される発光部と、前記本体基板の一端に形成される端子電極部とを備えた発光ダイオードにおいて、
前記端子電極部は、前記本体基板の上面の一端に設けられ、表面に導電膜を有する絶縁基板と、
この絶縁基板の導電膜を含めた側面から本体基板の側面及び下面にかけて形成される絶縁層と、前記絶縁層の表面に被覆され、前記導電膜と導通するメッキ層とを備えて構成されていることを特徴とする発光ダイオード。
In a light emitting diode comprising a main body substrate made of a metal member, a light emitting portion formed on the main body substrate, and a terminal electrode portion formed on one end of the main body substrate,
The terminal electrode portion is provided at one end of the upper surface of the main body substrate, and an insulating substrate having a conductive film on the surface;
The insulating substrate includes an insulating layer formed from a side surface including the conductive film to a side surface and a lower surface of the main substrate, and a plating layer that covers the surface of the insulating layer and is electrically connected to the conductive film . A light emitting diode characterized by that.
前記端子電極部は、前記本体基板の一端を凹設した箇所に設けられる請求項1又は2に記載の発光ダイオード。   The light emitting diode according to claim 1, wherein the terminal electrode portion is provided at a location where one end of the main body substrate is recessed. 前記絶縁層は、レジスト材によって形成され、前記本体基板の表面に被着される請求項1又は2に記載の発光ダイオード。   The light emitting diode according to claim 1, wherein the insulating layer is formed of a resist material and is attached to a surface of the main body substrate. 前記絶縁基板は、ガラス材に半硬化状態の熱硬化性樹脂を含浸させて形成される請求項1又は2に記載の発光ダイオード。   The light-emitting diode according to claim 1, wherein the insulating substrate is formed by impregnating a glass material with a semi-cured thermosetting resin. 前記発光部は、前記本体基板の上面の中央部に設けられるリング状の壁部と、この壁部内に配置される1又は2以上の発光素子と、この発光素子を前記壁部内に封止する透光性を有した樹脂体とを備えて構成される請求項1又は2に記載の発光ダイオード。   The light emitting unit includes a ring-shaped wall provided at the center of the upper surface of the main body substrate, one or more light emitting elements disposed in the wall, and seals the light emitting element in the wall. The light emitting diode according to claim 1 or 2, comprising a resin body having translucency. 複数の発光ダイオードが形成可能な平面サイズを有する金属製の集合本体基板を形成し、
この集合本体基板の所定箇所の上面及び下面の一部に円形状の孔部とこの孔部の周囲に導電膜が形成された絶縁基板を接合し、
前記孔部に沿って前記集合本体基板を厚み方向に貫通する貫通孔を形成し、
この貫通孔内に前記導電膜を含めた絶縁基板の側面までを満たすように絶縁性のレジスト材を充填して硬化させた後、このレジスト材の中心部を除去することによって、前記貫通孔の内周面にレジスト材を付着させ、
このレジスト材の表面から前記集合本体基板の上面及び下面に接合されている絶縁基板の側面及び導電膜をメッキ処理することによって、集合本体基板の上面から下面に導通するスルーホールとしての端子電極を形成することを特徴とする発光ダイオードの製造方法。
Forming a metal aggregate body substrate having a planar size capable of forming a plurality of light emitting diodes;
Bonding a circular hole and an insulating substrate in which a conductive film is formed around the hole to a part of the upper surface and the lower surface of a predetermined portion of the collective body substrate,
Forming a through-hole penetrating the aggregate body substrate in the thickness direction along the hole,
After filling and curing the insulating resist material so as to fill up the side surface of the insulating substrate including the conductive film in the through hole, the central portion of the resist material is removed to remove the through hole. A resist material is attached to the inner peripheral surface,
By plating the side surfaces of the insulating substrate bonded to the upper and lower surfaces of the collective main body substrate and the conductive film from the surface of the resist material, terminal electrodes as through holes that conduct from the upper surface to the lower surface of the collective main substrate are formed. A method for manufacturing a light emitting diode, comprising: forming a light emitting diode.
JP2009232132A 2009-10-06 2009-10-06 Light emitting diode and manufacturing method thereof Expired - Fee Related JP5485642B2 (en)

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