JP2010239043A - Led light source and method of manufacturing led light source - Google Patents

Led light source and method of manufacturing led light source Download PDF

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JP2010239043A
JP2010239043A JP2009087463A JP2009087463A JP2010239043A JP 2010239043 A JP2010239043 A JP 2010239043A JP 2009087463 A JP2009087463 A JP 2009087463A JP 2009087463 A JP2009087463 A JP 2009087463A JP 2010239043 A JP2010239043 A JP 2010239043A
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light source
led light
barrier layer
electrode
led
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Mizue Fukushima
福島　　瑞惠
Tomohiro Matsumoto
智浩 松本
Masahiro Sato
雅浩 佐藤
Toshiyuki Tsuda
俊幸 津田
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Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
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Citizen Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

<P>PROBLEM TO BE SOLVED: To provide an LED light source that is hardly damaged during chroma adjustment and can adjust chroma easily without hardly changing the outside shape thereof. <P>SOLUTION: The LED light source (20) includes: Ag electrodes (24, 25) disposed on a substrate (30); a barrier layer (50) constituted of a metal oxide film that is formed to coat the entire Ag electrodes; an LED element (21) mounted to the barrier layer; and wires (26, 28) for electrically connecting the Ag electrodes and the LED element where part of the barrier layer for connecting the Ag electrodes and the LED element is removed. A method of manufacturing such an LED light source is also provided. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明はＬＥＤ光源及びＬＥＤ光源の製造方法に関し、特にＬＥＤからの発光の一部が蛍光体によって波長変換されるＬＥＤ光源及びＬＥＤ光源の製造方法に関する。   The present invention relates to an LED light source and an LED light source manufacturing method, and more particularly to an LED light source in which a part of light emitted from an LED is wavelength-converted by a phosphor and an LED light source manufacturing method.

ＬＥＤ発光装置では、ＬＥＤチップが基板上にダイボンディングされ、ワイヤーでＬＥＤチップと電極が電気的に接続され、樹脂で周囲を封止されている。また、ＬＥＤ発光装置の内部リードやリフレクタには、銀メッキが施されている。しかし、樹脂を介してガス等が進入し、銀メッキが硫化して黒色化し、ＬＥＤ発光装置の光出力が低下するという問題があった。そこで、銀メッキの硫化を防止するための薄膜コートを用いるＬＥＤ発光装置が知られている（例えば、特許文献１参照）。   In an LED light-emitting device, an LED chip is die-bonded on a substrate, the LED chip and an electrode are electrically connected with a wire, and the periphery is sealed with a resin. Moreover, silver plating is given to the internal lead and reflector of the LED light-emitting device. However, there is a problem that gas or the like enters through the resin, the silver plating is sulfided and blackened, and the light output of the LED light emitting device is lowered. Therefore, an LED light-emitting device using a thin film coat for preventing silver plating from being sulfided is known (for example, see Patent Document 1).

図１は、上述した従来のＬＥＤ発光装置１の概略断面図である。   FIG. 1 is a schematic cross-sectional view of the conventional LED light emitting device 1 described above.

ＬＥＤ発光装置１では、支持体１１に配置された内部リード１３ａの上には銀メッキ１４が施され、その上にＬＥＤチップ１５が実装されている。ＬＥＤチップ１５上の電極１５ａは導電性ワイヤー１８により内部リード１３ａと電気的に接続されている。支持体１１の凹部には内部リード１３ａの露出部及びＬＥＤチップ１５を覆うように、薄膜コート１６が形成されている。薄膜コート１６の上には、透明性樹脂１７が注入され、支持体１１の凹部を封止している。支持体１１の外部には、内部リード１３ａと繋がる外部リード１３ｂ及び表面実装用の外部端子１３ｃが配置されている。   In the LED light emitting device 1, silver plating 14 is applied on the internal leads 13 a arranged on the support 11, and the LED chip 15 is mounted thereon. The electrode 15 a on the LED chip 15 is electrically connected to the internal lead 13 a by a conductive wire 18. A thin film coat 16 is formed in the concave portion of the support 11 so as to cover the exposed portion of the internal lead 13 a and the LED chip 15. A transparent resin 17 is injected onto the thin film coat 16 to seal the concave portion of the support 11. Outside the support 11, an external lead 13b connected to the internal lead 13a and an external terminal 13c for surface mounting are arranged.

また、薄膜コートを形成する物質は、エポキシ樹脂、オキセタン樹脂、変成シリコーン樹脂等の樹脂が用いられている。   In addition, as a material for forming the thin film coat, a resin such as an epoxy resin, an oxetane resin, or a modified silicone resin is used.

しかしながら、ＬＥＤ発光装置１では、ＬＥＤチップ１５が直接内部リード１３ａ上に実装されており、ＬＥＤチップ１５と内部リード１３ａ上の銀メッキ１４との間には、薄膜コート１６は形成されていない。ＬＥＤチップ１５の点灯によってＬＥＤチップ１５が発熱すると、銀メッキ１４中の不純物が移動（マイグレーション）を起こしたり、光と熱による組成変化を起こしたりして、その表面を黒色化させてしまう。ＬＥＤチップ１５の下部の銀メッキ１４が黒色化すると、ＬＥＤチップ１５自体がほぼ透明に近いことから、反射効率の低下等によって、ＬＥＤ発光装置１全体の発光効率を低下させ、長期信頼性を確保できないという不具合があった。さらに、樹脂によって形成された薄膜コートでは、硫化ガス等の透過を完全には遮断することができず、銀メッキの黒色化を十分に防止することができないという問題もあった。   However, in the LED light emitting device 1, the LED chip 15 is directly mounted on the internal lead 13a, and the thin film coat 16 is not formed between the LED chip 15 and the silver plating 14 on the internal lead 13a. When the LED chip 15 generates heat due to the lighting of the LED chip 15, impurities in the silver plating 14 cause migration (migration) or change in composition due to light and heat, thereby blackening the surface. When the silver plating 14 under the LED chip 15 is blackened, the LED chip 15 itself is almost transparent. Therefore, the LED light emitting device 1 as a whole is lowered in luminous efficiency due to a reduction in reflection efficiency, and long-term reliability is ensured. There was a bug that it was not possible. Furthermore, the thin film coat formed of resin cannot completely block the transmission of sulfurized gas or the like, and there is a problem that the blackening of the silver plating cannot be sufficiently prevented.

特開２００８−１０５９１号公報（図１）Japanese Patent Laying-Open No. 2008-10591 (FIG. 1)

そこで、本発明は、上述した問題点を解消することを可能としたＬＥＤ光源およびＬＥＤ光源の製造方法を提供することを目的とする。   Then, an object of this invention is to provide the manufacturing method of the LED light source which made it possible to eliminate the trouble mentioned above, and an LED light source.

また、本発明は、銀メッキ等の変色を抑えることによりＬＥＤ光源の長期信頼性を確保することを可能としたＬＥＤ光源、及びそのようなＬＥＤ光源の製造方法を提供することを目的とする。   Another object of the present invention is to provide an LED light source capable of ensuring long-term reliability of the LED light source by suppressing discoloration such as silver plating, and a method for manufacturing such an LED light source.

本発明に係るＬＥＤ光源の製造方法では、基板上に配置されたＡｇ電極全体を被服するように金属酸化膜により構成されるバリア層を成膜し、バリア層上にＬＥＤ素子を実装し、Ａｇ電極とＬＥＤ素子と接続するためにバリア層の一部を除去し、バリア層が除去された部分を利用してＡｇ電極とＬＥＤ素子とを電気的に接続するステップを有することを特徴とする。   In the method for manufacturing an LED light source according to the present invention, a barrier layer composed of a metal oxide film is formed so as to cover the entire Ag electrode disposed on the substrate, and the LED element is mounted on the barrier layer. A part of the barrier layer is removed to connect the electrode and the LED element, and the Ag electrode and the LED element are electrically connected using the part from which the barrier layer is removed.

本発明に係るＬＥＤ光源では、基板上に配置されたＡｇ電極と、Ａｇ電極全体を被服するように成膜された金属酸化膜により構成されるバリア層と、バリア層の上に実装されたＬＥＤ素子と、Ａｇ電極と前記ＬＥＤ素子とを電気的に接続するワイヤーを有し、Ａｇ電極とＬＥＤ素子と接続するためにバリア層の一部が除去されていることを特徴とする。   In the LED light source according to the present invention, an Ag electrode disposed on a substrate, a barrier layer composed of a metal oxide film formed so as to cover the entire Ag electrode, and an LED mounted on the barrier layer The device has a wire for electrically connecting the Ag electrode and the LED element, and a part of the barrier layer is removed to connect the Ag electrode and the LED element.

本発明によれば、Ａｇ電極全体を被服した金属酸化膜から構成されるバリア層を有しているので、外部からの硫化ガス等の進入を防止することができるだけでなく、ＬＥＤ素子の発熱等によるＬＥＤ素子の下部のＡｇ電極の変成等をも防止することが可能となった。したがって、Ａｇ電極の黒色化を長期に渡って防止できることとなり、ＬＥＤ光源の高い発光効率を長期間維持することが可能となった。   According to the present invention, since it has a barrier layer composed of a metal oxide film coated on the entire Ag electrode, it can not only prevent the entry of sulfide gas or the like from the outside, but also heat generation of the LED element, etc. Thus, it is possible to prevent the Ag electrode under the LED element from being transformed. Therefore, the blackening of the Ag electrode can be prevented over a long period of time, and the high luminous efficiency of the LED light source can be maintained for a long period of time.

従来のＬＥＤ発行装置１の概略断面図である。It is a schematic sectional drawing of the conventional LED issuing apparatus 1. FIG. 本発明に係るＬＥＤ光源２０を示す概略断面図である。It is a schematic sectional drawing which shows the LED light source 20 which concerns on this invention. ＬＥＤ光源２０の製造過程を説明する図である。It is a figure explaining the manufacturing process of the LED light source. 比較実験用のＬＥＤ光源６０の概略断面図である。It is a schematic sectional drawing of the LED light source 60 for comparative experiments. 他の比較実験用のＬＥＤ光源７０の概略断面図である。It is a schematic sectional drawing of the LED light source 70 for another comparative experiment. 更に他の比較実験用のＬＥＤ光源８０の概略断面図である。It is a schematic sectional drawing of the LED light source 80 for another comparative experiment. ＬＥＤ光源の硫化試験結果の一例を示す図である。It is a figure which shows an example of the sulfide test result of a LED light source.

以下図面を参照して、本発明に係るＬＥＤ光源及びＬＥＤ光源の製造方法について説明する。但し、本発明の技術的範囲はそれらの実施の形態に限定されず、特許請求の範囲に記載された発明とその均等物に及ぶ点に留意されたい。   The LED light source and the LED light source manufacturing method according to the present invention will be described below with reference to the drawings. However, it should be noted that the technical scope of the present invention is not limited to these embodiments, but extends to the invention described in the claims and equivalents thereof.

図２は、本発明に係るＬＥＤ光源２０を示す概略断面図である。   FIG. 2 is a schematic sectional view showing the LED light source 20 according to the present invention.

ＬＥＤ光源２０において、基板３０の上には、Ａｇ電極２４及び２５が配置され、Ａｇ電極２４及び２５は不図示の外部電極と接続されている。Ａｇ電極２４及び２５の上には、バリア層５０が配置されている。バリア層５０の上には、ＬＥＤ素子２１が実装され、ＬＥＤ素子２１のアノード２２とＡｇ電極２４はワイヤー２６によって電気的に接続され、ＬＥＤ素子２１のカソード２３とＡｇ電極２５はワイヤー２８によって電気的に接続されている。なお、ワイヤー２６とＡｇ電極２４、及びワイヤー２８とＡｇ電極２５とは、それぞれ接点２７及び２９においてワイヤーボンドされている。なお、Ａｇ電極２４及び２５は、金属電極をＡｇメッキしたものでも良い。   In the LED light source 20, Ag electrodes 24 and 25 are disposed on the substrate 30, and the Ag electrodes 24 and 25 are connected to an external electrode (not shown). A barrier layer 50 is disposed on the Ag electrodes 24 and 25. The LED element 21 is mounted on the barrier layer 50, the anode 22 and the Ag electrode 24 of the LED element 21 are electrically connected by a wire 26, and the cathode 23 and the Ag electrode 25 of the LED element 21 are electrically connected by a wire 28. Connected. The wire 26 and the Ag electrode 24 and the wire 28 and the Ag electrode 25 are wire-bonded at the contacts 27 and 29, respectively. The Ag electrodes 24 and 25 may be metal electrodes that are Ag-plated.

ＬＥＤ光源２０のパッケージ枠３１内には、ＬＥＤ素子２１の周囲を囲むように、蛍光体が均一に練り込まれた封止材４０が埋め込まれている。ＬＥＤ素子２１として青色光を発光する窒化物系化合物半導体を用い、封止材４０に含まれる蛍光体としては、セリウムで付活されたイットリウム・アルミニウム・ガーネット（ＹＡＧ）系蛍光体を用いた。封止材４０におけるＹＡＧ蛍光体の濃度は、約４．５ｗｔ％に設定した。封止材４０に含まれる蛍光体は、ＬＥＤ素子２１からの発光の一部を吸収し、波長変換して黄色光を発光する。これによって、ＬＥＤ光源２０では、ＬＥＤ素子２１からの青色光と、ＬＥＤ素子２１からの青色光によって蛍光体から発光する黄色光が混ざり合って擬似白色光を出射する。なお、ＬＥＤ素子２１の発光光と封止材４０に含まれる蛍光体の組み合わせは上記の例に限定されるものではない。   A sealing material 40 in which a phosphor is kneaded uniformly is embedded in the package frame 31 of the LED light source 20 so as to surround the LED element 21. A nitride compound semiconductor that emits blue light is used as the LED element 21, and an yttrium-aluminum-garnet (YAG) -based phosphor activated with cerium is used as the phosphor contained in the sealing material 40. The concentration of the YAG phosphor in the sealing material 40 was set to about 4.5 wt%. The phosphor contained in the sealing material 40 absorbs part of the light emitted from the LED element 21 and converts the wavelength to emit yellow light. Thus, in the LED light source 20, the blue light from the LED element 21 and the yellow light emitted from the phosphor by the blue light from the LED element 21 are mixed to emit pseudo white light. In addition, the combination of the emitted light of the LED element 21 and the phosphor included in the sealing material 40 is not limited to the above example.

封止材４０として、透明性のシリコーン樹脂を用いた。なお、封止材４０は、この樹脂に限定されるものではなく、例えば透明性のあるエポキシ樹脂等を利用することも可能である。   As the sealing material 40, a transparent silicone resin was used. In addition, the sealing material 40 is not limited to this resin, For example, a transparent epoxy resin etc. can also be utilized.

バリア層５０としては、酸化ケイ素膜をスパッタ法によって２０ｎｍに成膜したものを利用した。しかしながら、バリア層５０としては、これに限定されるものではなく、酸化アルミニウム膜、酸化チタン膜または、これら化合物の酸素の一部を他の元素に置き換えた化合物等のＬＥＤ素子２１からの特定の発光波長を有する出射光を十分に透過することが可能な金属酸化膜を利用することができる。特に、Ａｇ電極との密着性については酸化アルミニウム膜が優れており、硫化ガスの耐透過性については酸化ケイ素膜が優れている。したがって、バリア層５０を２層構造とし、Ａｇ電極に直接酸化アルミニウム膜を成膜して中間層とし、その上に酸化ケイ素膜を成膜すると、Ａｇ電極への密着性に優れ、且つＡｇ電極を黒色化させる硫化ガスの耐透過性に優れたより効果的なバリア層５０を設けることが可能となる。   As the barrier layer 50, a silicon oxide film formed to a thickness of 20 nm by a sputtering method was used. However, the barrier layer 50 is not limited to this, and a specific layer from the LED element 21 such as an aluminum oxide film, a titanium oxide film, or a compound in which part of oxygen in these compounds is replaced with another element is used. A metal oxide film that can sufficiently transmit outgoing light having an emission wavelength can be used. In particular, the aluminum oxide film is excellent in adhesion to the Ag electrode, and the silicon oxide film is excellent in permeation resistance of the sulfide gas. Therefore, when the barrier layer 50 has a two-layer structure, an aluminum oxide film is directly formed on the Ag electrode to form an intermediate layer, and a silicon oxide film is formed thereon, the adhesiveness to the Ag electrode is excellent, and the Ag electrode It is possible to provide a more effective barrier layer 50 that is excellent in resistance to permeation of sulfide gas for blackening.

図３は、ＬＥＤ光源２０の製造過程を説明する図である。   FIG. 3 is a diagram for explaining the manufacturing process of the LED light source 20.

図３（ａ）は、基板３０上に、Ａｇ電極２４及び２５を固定した状況を示しており、図３（ｂ）は、次に、Ａｇ電極２４及び２５の上部に、酸化ケイ素から構成されるバリア層５０をスパッタ法により２０ｎｍに成膜した状態を示している。   FIG. 3A shows a state in which the Ag electrodes 24 and 25 are fixed on the substrate 30. FIG. 3B shows a state in which silicon oxide is formed on the Ag electrodes 24 and 25 next. The barrier layer 50 is formed to a thickness of 20 nm by sputtering.

図３（ｃ）は、次に、バリア層５０の上に、ＬＥＤ素子２１を実装した状態を示している。このように、ＬＥＤ素子２１は、バリア層５０によって完全に被服されたＡｇ電極上に実装されているので、ＬＥＤ素子２１の長期点灯動作等によって、ＬＥＤ素子２１の下部のＡｇ電極２４が変成等して、黒色化するのを効果的に防止することが可能となった。   Next, FIG. 3C shows a state in which the LED element 21 is mounted on the barrier layer 50. Thus, since the LED element 21 is mounted on the Ag electrode completely covered by the barrier layer 50, the Ag electrode 24 under the LED element 21 is transformed by the long-time lighting operation of the LED element 21 or the like. Thus, it is possible to effectively prevent blackening.

図３（ｄ）は、次に、ＬＥＤ素子２１とＡｇ電極をワイヤーで接続するために、Ａｇ電極２４及び２５上の所定箇所５１及び５２のバリア層５０を除去した状況を示している。バリア層５０の所定箇所５１及び５２の除去には、３５５ｎｍ−６０μＪのレーザ光を用いたレーザ加工法を用いた。なお、バリア層５０の所定箇所５１及び５２の除去には、物理的にスクレーパ等によってバリア層５０を除去する機械加工法、マスクを蒸着させてマスクが蒸着された部分以外を除去するフォトリソグラフィー法等を利用することも可能である。   FIG. 3D shows a situation where the barrier layer 50 is removed from the predetermined portions 51 and 52 on the Ag electrodes 24 and 25 in order to connect the LED element 21 and the Ag electrode with a wire. For removing the predetermined portions 51 and 52 of the barrier layer 50, a laser processing method using a laser beam of 355 nm-60 μJ was used. The predetermined portions 51 and 52 of the barrier layer 50 can be removed by a mechanical processing method in which the barrier layer 50 is physically removed by a scraper or the like, or a photolithography method in which a portion other than the portion on which the mask is deposited is removed by vapor deposition of the mask. Etc. can also be used.

図３（ｅ）は、次に、ＬＥＤ素子２１のアノード及びカソードとＡｇ電極２４及び２５とを、図３（ｄ）においてバリア層５０を除去した箇所５１及び５２でワイヤーボンドした状況を示している。   FIG. 3 (e) shows a state in which the anode and cathode of the LED element 21 and the Ag electrodes 24 and 25 are then wire-bonded at the locations 51 and 52 where the barrier layer 50 is removed in FIG. 3 (d). Yes.

図３（ｅ）の状況の後、パッケージ枠３１を設け、パッケージ枠３１の内側に、ＬＥＤ素子２１の周囲を囲むように、蛍光体が均一に練り込まれた封止材４０を充填して硬化させて、図２に示したＬＥＤ光源２０が完成する。   After the situation of FIG. 3E, a package frame 31 is provided, and a sealing material 40 in which phosphors are uniformly kneaded so as to surround the LED element 21 is filled inside the package frame 31. By curing, the LED light source 20 shown in FIG. 2 is completed.

図４は、比較実験用のＬＥＤ光源６０の概略断面図である。   FIG. 4 is a schematic cross-sectional view of an LED light source 60 for a comparative experiment.

ＬＥＤ光源６０では、Ａｇ電極２４及び２５全体を被服するようにバリア層５０を設けるのではなく、Ａｇ電極２４及び２５とＬＥＤ素子２１とをワイヤーボンドした後に、ＬＥＤ素子２１、Ａｇ電極２４及び２５の上からバリア層６１を成膜した。バリア層６１は、バリア層５０と同様に、酸化ケイ素膜をスパッタ法により２０ｎｍの膜厚に成膜したものである。ＬＥＤ光源６０の他の構成は、ＬＥＤ光源２０と同様であるので、説明を省略する。   In the LED light source 60, the barrier layer 50 is not provided so as to cover the entire Ag electrodes 24 and 25, but the LED elements 21, Ag electrodes 24 and 25 are bonded after the Ag electrodes 24 and 25 and the LED element 21 are wire-bonded. A barrier layer 61 was formed from above. As with the barrier layer 50, the barrier layer 61 is a silicon oxide film formed to a thickness of 20 nm by sputtering. Since the other structure of the LED light source 60 is the same as that of the LED light source 20, description is abbreviate | omitted.

図５は、他の比較実験用のＬＥＤ光源７０の概略断面図である。   FIG. 5 is a schematic cross-sectional view of an LED light source 70 for another comparative experiment.

ＬＥＤ光源７０では、バリア層５０を設けていない以外は、ＬＥＤ光源２０と同様である。   The LED light source 70 is the same as the LED light source 20 except that the barrier layer 50 is not provided.

図６は、更に他の比較実験用のＬＥＤ光源８０の概略断面図である。   FIG. 6 is a schematic cross-sectional view of an LED light source 80 for still another comparative experiment.

ＬＥＤ光源８０では、金属酸化膜によるバリア層に代わり、変成シリコーン樹脂による薄膜８１を設けている。薄膜８１は、スプレー法によって変成シリコーンが５μｍ厚になるように成膜したものである。ＬＥＤ光源８０の他の構成は、ＬＥＤ光源２０と同様であるので、説明を省略する。   In the LED light source 80, a thin film 81 made of a modified silicone resin is provided instead of the barrier layer made of a metal oxide film. The thin film 81 is formed by spraying so that the modified silicone has a thickness of 5 μm. Since the other structure of the LED light source 80 is the same as that of the LED light source 20, description is abbreviate | omitted.

図７は、ＬＥＤ光源の硫化試験結果の一例を示す図である。   FIG. 7 is a diagram illustrating an example of the result of the sulfidation test of the LED light source.

硫化試験では、Ｈ2Ｓが２５０ｐｐｍ、湿度１００％、温度２５℃の環境に、ＬＥＤ光源を配置し、連続点灯させた場合の、輝度を測定した。図７は、硫化試験結果を示したもので、横軸は保存時間（時間）を示し、縦軸はＬＥＤ光源の初期の輝度を１００％とした場合の輝度（％）を示している。 In the sulfurization test, the luminance was measured when an LED light source was placed in an environment where H 2 S was 250 ppm, humidity was 100%, and temperature was 25 ° C., and the LED was continuously lit. FIG. 7 shows the result of the sulfidation test. The horizontal axis represents the storage time (hour), and the vertical axis represents the luminance (%) when the initial luminance of the LED light source is 100%.

図７において、直線９０は図２に示した本発明に係るＬＥＤ光源２０のデータを示し、点線９１は図６に示した比較実験用のＬＥＤ光源８０のデータを示し、点線９２は図４に示した比較実験用のＬＥＤ光源６０のデータを示し、２点鎖線９３は図５に示した比較実験用のＬＥＤ光源７０のデータを示している。   In FIG. 7, a straight line 90 shows data of the LED light source 20 according to the present invention shown in FIG. 2, a dotted line 91 shows data of the LED light source 80 for comparison experiment shown in FIG. 6, and a dotted line 92 shows FIG. Data of the LED light source 60 for comparison experiment shown is shown, and a two-dot chain line 93 shows data of the LED light source 70 for comparison experiment shown in FIG.

バリア層５０を有しないＬＥＤ光源７０（二点鎖線９３参照）では、約５０時間経過時に、輝度が当初の３０％まで低下してしまう。これは、硫化ガスがＬＥＤ光源７０内に浸透し、Ａｇ電極２４及び２５を黒色化させてしまうことが大きな原因であると考えられる。これに対して、本発明に係るＬＥＤ光源２０（直線９０参照）では、約５０時間経過時でも、輝度は当初の約８５％と、ＬＥＤ光源７０とは大きな輝度の差を有している。   In the LED light source 70 that does not have the barrier layer 50 (see the two-dot chain line 93), the luminance decreases to 30% of the initial value after about 50 hours have elapsed. This is considered to be caused mainly by the sulfurized gas permeating into the LED light source 70 and blackening the Ag electrodes 24 and 25. On the other hand, in the LED light source 20 (refer to the straight line 90) according to the present invention, even when about 50 hours have elapsed, the luminance is about 85% of the original, and the LED light source 70 has a large luminance difference.

バリア層６１を有しているＬＥＤ光源６０（点線９２参照）では、約５０時間経過時に、輝度が当初の約５５％まで低下してしまう。これは、バリア層６１が、Ａｇ電極２４の全体を被服していないことから、ＬＥＤ素子２１の連続点灯による発熱等によって、ＬＥＤ素子２１の下部のＡｇ電極２４が変成し、黒色化等してしまうことが大きな原因であると考えられる。これに対して、本発明に係るＬＥＤ光源２０（直線９０参照）では、約５０時間経過時でも、輝度は当初の約８５％と、ＬＥＤ光源６０とは大きな輝度の差を有している。さらに、約２００時間経過時でも、本発明に係るＬＥＤ光源２０では、以前当初の輝度の７０％以上を維持しているのに対し、ＬＥＤ光源６０では、約２００時間経過時には輝度は、当初の３０％程度まで低下しており、本発明に係るＬＥＤ光源２０とＬＥＤ光源６０との間には、大きな長期信頼性に関する差異が存在することが理解できる。   In the LED light source 60 having the barrier layer 61 (see the dotted line 92), the luminance is reduced to about 55% of the original after about 50 hours. This is because the barrier layer 61 does not cover the entire Ag electrode 24, and the Ag electrode 24 below the LED element 21 is transformed and blackened due to heat generated by the continuous lighting of the LED element 21. It is thought that this is a major cause. On the other hand, in the LED light source 20 (refer to the straight line 90) according to the present invention, even when about 50 hours have elapsed, the luminance is about 85% of the original, and the LED light source 60 has a large difference in luminance. Further, even when about 200 hours have elapsed, the LED light source 20 according to the present invention maintains 70% or more of the original luminance, whereas the LED light source 60 has the luminance of about 200 hours after the initial luminance. It can be understood that there is a large difference in long-term reliability between the LED light source 20 and the LED light source 60 according to the present invention.

変成シリコーンによる薄膜８１を有するＬＥＤ光源８０（点線９１参照）では、約５０時間経過時に、輝度が当初の約７０％まで低下してしまう。これは、薄膜８１が、金属酸化膜でないことから、硫化ガスを十分に遮断することができず、Ａｇ電極２４が黒色化等してしまうことが大きな原因であると考えられる。これに対して、本発明に係るＬＥＤ光源２０（直線９０参照）では、約５０時間経過時でも、輝度は当初の約８５％と、ＬＥＤ光源８０とは輝度の差を有している。さらに、約２００時間経過時でも、本発明に係るＬＥＤ光源２０では、以前当初の輝度の７０％以上を維持しているのに対し、ＬＥＤ光源８０では、約２００時間経過時には輝度は、当初の約４０％程度まで低下しており、本発明に係るＬＥＤ光源２０とＬＥＤ光源８０との間には、大きな長期信頼性に関する差異が存在することが理解できる。   In the LED light source 80 having the thin film 81 made of modified silicone (see the dotted line 91), the luminance is reduced to about 70% of the original after about 50 hours. This is probably because the thin film 81 is not a metal oxide film, so that the sulfide gas cannot be sufficiently blocked and the Ag electrode 24 is blackened. On the other hand, in the LED light source 20 according to the present invention (see the straight line 90), even when about 50 hours have elapsed, the luminance is about 85% of the original, and the LED light source 80 has a difference in luminance. Further, even when about 200 hours have elapsed, the LED light source 20 according to the present invention maintains 70% or more of the original luminance, whereas the LED light source 80 has the luminance of about 200 hours after the initial luminance. It can be understood that there is a large long-term reliability difference between the LED light source 20 and the LED light source 80 according to the present invention.

図７に示したように、Ａｇ電極全体を金属酸化膜から構成されるバリア層５０で被服するようにしたので、外部からの硫化ガスの進入を防止することができるだけでなく、ＬＥＤ素子２１の発熱等によるＬＥＤ素子２１の下部の変成等をも防止することができるので、ＬＥＤ光源のＡｇ電極の黒色化を防止して、長期に渡って良好な輝度を維持することが可能となった。   As shown in FIG. 7, since the entire Ag electrode is covered with the barrier layer 50 made of a metal oxide film, not only the entry of sulfur gas from the outside can be prevented, but also the LED element 21 Since it is possible to prevent the lower part of the LED element 21 from being deformed due to heat generation or the like, it is possible to prevent the Ag electrode of the LED light source from being blackened and to maintain good luminance over a long period of time.

上述したＬＥＤ光源２０（図２参照）で、基板３０上にＡｇ電極２４，２５、バリア層５０、ＬＥＤ素子２１、蛍光体が練り込まれた封止材４０とを備えた構成を示したが、本発明の構成は、上記構成に限定されるものではない。例えば、同一基板上に、Ａｇ電極、Ａｇ電極を被服するバリア層、異なる発光色を発するＬＥＤ素子（例えばＲ発光素子、Ｇ発光素子、Ｂ発光素子）とを有し、これら部材を蛍光体を含まない封止材で覆った構成に、本発明を適用することも可能である。   In the LED light source 20 (see FIG. 2) described above, the structure including the Ag electrodes 24 and 25, the barrier layer 50, the LED element 21, and the sealing material 40 in which the phosphor is kneaded is shown on the substrate 30. The configuration of the present invention is not limited to the above configuration. For example, an Ag electrode, a barrier layer that covers the Ag electrode, and LED elements that emit different emission colors (for example, an R light emitting element, a G light emitting element, and a B light emitting element) are provided on the same substrate. The present invention can also be applied to a configuration covered with a sealing material not included.

２０ ＬＥＤ光源
２１ ＬＥＤ素子
２４、２５ Ａｇ電極
３０ 基板
４０ 封止材
５０ バリア層 20 LED light source 21 LED element 24, 25 Ag electrode 30 Substrate 40 Sealing material 50 Barrier layer

Claims (6)

基板上に配置されたＡｇ電極全体を被服するように金属酸化膜により構成されるバリア層を成膜し、
前記バリア層上にＬＥＤ素子を実装し、
前記Ａｇ電極と前記ＬＥＤ素子と接続するために、前記バリア層の一部を除去し、
前記バリア層が除去された部分を利用して、前記Ａｇ電極と前記ＬＥＤ素子とを電気的に接続する、
ステップを有することを特徴とするＬＥＤ光源の製造方法。 A barrier layer composed of a metal oxide film is formed so as to cover the entire Ag electrode disposed on the substrate,
An LED element is mounted on the barrier layer,
In order to connect the Ag electrode and the LED element, a part of the barrier layer is removed,
Using the portion from which the barrier layer has been removed, the Ag electrode and the LED element are electrically connected.
The manufacturing method of the LED light source characterized by having a step. 前記ＬＥＤ素子からの発光の一部を吸収し波長変換して発光する蛍光体を含む封止材を、前記Ａｇ電極と電気的に接続された前記ＬＥＤ素子の周囲に配置するステップを更に有する、請求項１に記載のＬＥＤ光源の製造方法。   A step of disposing a sealing material including a phosphor that absorbs a part of light emitted from the LED element and converts the wavelength to emit light around the LED element electrically connected to the Ag electrode; The manufacturing method of the LED light source of Claim 1. 前記バリア層は、Ａｇ電極と接触するように成膜された酸化アルミニウムから構成された第１層と、前記第１層の上に成膜される酸化ケイ素から構成された第２層を含む、請求項１又は２に記載のＬＥＤ光源の製造方法。   The barrier layer includes a first layer made of aluminum oxide formed to be in contact with the Ag electrode, and a second layer made of silicon oxide formed on the first layer. The manufacturing method of the LED light source of Claim 1 or 2. 基板上に配置されたＡｇ電極と、
前記Ａｇ電極全体を被服するように成膜された金属酸化膜により構成されるバリア層と、
前記バリア層の上に実装されたＬＥＤ素子と、
前記Ａｇ電極と前記ＬＥＤ素子とを電気的に接続するワイヤーと、を有し、
前記Ａｇ電極と前記ＬＥＤ素子と接続するために前記バリア層の一部が除去されている、
ことを特徴とするＬＥＤ光源。 An Ag electrode disposed on the substrate;
A barrier layer composed of a metal oxide film formed so as to coat the entire Ag electrode;
An LED element mounted on the barrier layer;
A wire for electrically connecting the Ag electrode and the LED element;
A part of the barrier layer is removed to connect the Ag electrode and the LED element.
An LED light source characterized by that. 前記Ａｇ電極と電気的に接続された前記ＬＥＤ素子の周囲に配置され、前記ＬＥＤ素子からの発光の一部を吸収し波長変換して発光する蛍光体を含む封止材を、更に有する請求項４に記載のＬＥＤ光源。   The sealing material further includes a phosphor that is disposed around the LED element electrically connected to the Ag electrode and includes a phosphor that absorbs a part of light emitted from the LED element and converts the wavelength to emit light. 4. The LED light source according to 4. 前記バリア層は、Ａｇ電極と接触するように成膜された酸化アルミニウムから構成された第１層と、前記第１層の上に成膜される酸化ケイ素から構成された第２層を含む、請求項４又は５に記載のＬＥＤ光源。   The barrier layer includes a first layer made of aluminum oxide formed to be in contact with the Ag electrode, and a second layer made of silicon oxide formed on the first layer. The LED light source according to claim 4 or 5.
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