JP2011253846A - Light emitting device and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device suppressing deterioration of silver used for a conductive member or the like to achieve high output and high reliability, and a method for manufacturing the light emitting device.SOLUTION: The method for manufacturing a light emitting device includes: a first step of providing a silver-containing film on a package; a second step of bonding a bottom face of a light emitting element onto the silver-containing film; a third step of providing a first insulating member onto the silver-containing film; a fourth step of providing a second insulating member different from the first insulating member onto the first insulating member; and a fifth step of forming a sealing member covering the light emitting element.

Description

  The present invention relates to a light emitting device that can be used for a display device, a lighting fixture, a display, a backlight light source of a liquid crystal display, and the like, and a manufacturing method thereof. And a manufacturing method thereof.

  In recent years, various electronic components have been proposed and put into practical use, and the performance required for them has been increased. In particular, it is required to exhibit stable performance for a long time even under severe use environment. The same applies to light-emitting devices such as light-emitting diodes, and the performance required in the general lighting field, in-vehicle lighting field, and the like is increasing day by day, and in particular, high output and high reliability are required. Furthermore, a low-cost light emitting device is required while satisfying these characteristics.

  In general, a light-emitting device includes a base on which electronic components such as a semiconductor light-emitting element (hereinafter also referred to as a light-emitting element) and a protective element are mounted, and a conductive member for supplying power to the electronic components. Furthermore, the light emitting device includes a sealing member for protecting the electronic component from the external environment.

  In order to increase the output of the light emitting device, in addition to improving the output of the mounted light emitting element itself, the light extraction efficiency should be improved by the material and shape of the substrate, conductive member, sealing member, etc. Is effective.

  For example, a metal member having good conductivity is used as the material of the conductive member. By plating silver on the surface of the metal member, the light from the light emitting element can be efficiently reflected. As a material for the sealing member, a resin that easily transmits light from the light emitting element is suitable. In particular, the lifetime of the light-emitting device can be extended by using a silicone resin excellent in weather resistance and heat resistance for the sealing member.

  However, silver used as a reflector tends to be easily deteriorated by sulfur components in the atmosphere. For this reason, various devices have been conventionally used to prevent silver deterioration. For example, precious metal plating is performed on a silver plating layer that is a light reflecting surface in a cavity in which a light emitting element is mounted (Patent Document 1), or a silver-plated lead frame is covered with sol-gel glass (Patent Document 2) is disclosed.

  Further, as the output of the light emitting element itself mounted on the light emitting device increases, the amount of heat generated by the light emitting element increases. For this reason, in a light emitting device, in order to efficiently dissipate heat from the light emitting element to the package side, a technique of joining the light emitting element by metal eutectic is known. Accordingly, a method for improving light extraction efficiency by forming a silver metal film as a reflective film between the bottom surface of the light emitting element and the metal eutectic and reducing light absorption by the metal eutectic is also disclosed. (Patent Document 3). Here, if the silver film is formed even on the outer periphery of the light emitting element, peeling of the silver occurs in the process of separating the light emitting element from a wafer having a large number of light emitting elements and separating it into individual light emitting elements such as bars or chips. Sometimes. For this reason, silver may not be formed up to the outer periphery of the light emitting element. In this case, silver is deposited on the back surface (lower surface) of the light emitting element so that the area is smaller than the back surface of the light emitting element. As a result, when metal eutectic bonding is performed, the metal eutectic material is formed in the area where the silver on the back surface of the light emitting element is formed due to the wettability relationship. A gap corresponding to the thickness of the metal eutectic material is generated between the plated portion.

JP 2006-303069 A JP 2007-324256 A JP 2007-266338 A

  When plating with another metal on silver like patent document 1, there exists a problem that it is difficult to form the plating film of the thickness which does not reduce the reflectance of silver. Moreover, in the method as described in Patent Document 2, since it is difficult to control the film thickness of the sol-gel glass, there is a problem that cracks occur in the thickened part and silver deterioration cannot be sufficiently prevented. is there. If the glass is thinly provided to prevent this crack, a portion where the film becomes too thin or a portion where the film is not formed is formed due to the variation in film thickness, and the deterioration of silver cannot be sufficiently prevented.

If a protective film is formed by a vacuum process such as sputtering in order to protect silver or the like plated on the conductive member of the light emitting device from sulfur components in the atmosphere, the reliability and productivity of the light emitting device are improved. It is expected. However, for example, in a light-emitting device in which silver is formed on the back surface of the light-emitting element so that the width is narrower than the width of the light-emitting element, when a protective film is formed by a vacuum process, a conductive member is formed for the straightness of sputtering. Of the silver-plated portion, it is difficult to completely cover the gap portion that becomes the shade of the light emitting element with the protective film. In addition, when film formation is performed by sputtering, for example, a portion called a pinhole that cannot be partially formed may occur. Further, if there are minute irregularities on the substrate side on which the protective film is formed, there may be a portion where the film cannot be formed. Such a problem is particularly likely to occur when the protective film is formed thin.
Therefore, further improvements in reliability and lifespan are demanded.

  Accordingly, an object of the present invention is to provide a method for manufacturing a light-emitting device that suppresses deterioration of silver used for a conductive member or the like and has high output and high reliability.

  In order to achieve the above object, a method for manufacturing a light-emitting device according to the present invention includes a first step of providing a silver-containing film on a package and a second step of bonding the bottom surface of the light-emitting element on the silver-containing film. And a third step of providing the first insulating member on the silver-containing film, and a fourth step of providing the second insulating member on the first insulating member by a manufacturing method different from that of the first insulating member. And a fifth step of forming a sealing member that covers the light emitting element. According to such a procedure, deterioration of the silver-containing film can be prevented by providing the first insulating member on the silver-containing film. Even when there is a portion that cannot be covered by the first insulating member, the second insulating member is provided by a manufacturing method different from that of the first insulating member, and therefore the silver without the first insulating member formed. Degradation of the contained film can be prevented. In addition, since the silver-containing film is prevented from being deteriorated by the first insulating member, it is not necessary to provide the second insulating member thickly on the first insulating member. Therefore, cracks in the second insulating member can be suppressed. Thereby, deterioration of silver provided in the light emitting device, in particular, sulfidation can be suppressed, and a light emitting device with high output and high reliability can be obtained.

  In the light emitting device manufacturing method according to the present invention, it is preferable that the first insulating member is provided by a dry method in the third step.

  In the light emitting device manufacturing method according to the present invention, it is preferable that the second insulating member is provided by a wet method in the fourth step.

  In the method for manufacturing a light emitting device according to the present invention, the dry method is preferably sputtering or vapor deposition.

  In the method for manufacturing a light emitting device according to the present invention, the wet method is preferably a sol-gel method or a water glass method.

  In the method for manufacturing a light emitting device according to the present invention, it is preferable that the first insulating member is a metal oxide.

  In the method for manufacturing a light emitting device according to the present invention, it is preferable that the second insulating member is a silicate material.

  Further, in the method for manufacturing a light emitting device according to the present invention, in the second step, at least the peripheral portion of the bottom surface of the light emitting element and the silver-containing film are separated from each other. In the fourth step, the second insulating member Can be provided to directly cover the silver-containing film below the light emitting element.

  Further, in the method for manufacturing a light-emitting device according to the present invention, in the second step, the metal film partially provided on the bottom surface of the light-emitting element is bonded with a die-bonding material made by heating and melting, and the fourth step In the step, it is preferable that the metal film contains silver, and the second insulating member is provided so as to cover the silver-containing film and the metal film below the light emitting element.

  In order to achieve the above object, a light-emitting device according to the present invention includes a base, a silver-containing film provided on the base, a light-emitting element placed on the silver-containing film, and the light-emitting element. And a first insulating member that covers a part of the surface of the silver-containing film, and a portion that is not formed with the first insulating member, and is different from the first insulating member. A second insulating member made of a material; and a sealing member that further covers the light emitting element. According to this configuration, since the first insulating member covers the silver-containing film and the like, the silver-containing film can be protected from corrosive gases such as sulfide gas in the atmosphere. Therefore, it is possible to prevent the silver-containing film from being discolored by the corrosive gas and improve the reliability and life. Further, a portion where the first insulating member is not formed on the surface of the silver-containing film is covered with the second insulating member. Thereby, the site | part in which the 1st insulating member is not formed can be protected from the sulfide gas etc. in air | atmosphere.

  In the light emitting device according to the present invention, at least a peripheral portion of the bottom surface of the light emitting element and the silver containing film are separated from each other, and the second insulating member covers the silver containing film below the light emitting element. It is preferable.

  In the light emitting device according to the present invention, the first insulating member is preferably a metal oxide.

  In the light emitting device according to the present invention, it is preferable that the second insulating member is a silicate material.

According to the method for manufacturing a light emitting device of the present invention, the silver-containing film is protected by the first insulating member, and the second insulating member is formed on the first insulating member by a manufacturing method different from that of the first insulating member. Thus, deterioration of the silver-containing film can be prevented. Since the first insulating member prevents the silver-containing film from being deteriorated, it is not necessary to provide the second insulating member thickly on the first insulating member. Therefore, cracks in the second insulating member can be suppressed. Thereby, deterioration of silver provided in the light emitting device, in particular, sulfidation can be suppressed, and a light emitting device with high output and high reliability can be obtained.
According to the light emitting device of the present invention, since the first insulating member covers the silver-containing film and the like, the silver-containing film can be protected from corrosive gases such as sulfide gas in the atmosphere. Therefore, it is possible to prevent the silver-containing film from being discolored by the corrosive gas and improve the reliability and life. Further, a portion where the first insulating member is not formed on the surface of the silver-containing film is covered with the second insulating member. Thereby, the site | part in which the 1st insulating member is not formed can be protected from the sulfide gas etc. in air | atmosphere.

It is a perspective view which shows the light-emitting device which concerns on Embodiment 1 of this invention. It is a top view of the light-emitting device shown in FIG. It is sectional drawing in the I-I 'line | wire of the light-emitting device shown in FIG. It is sectional drawing which shows the manufacturing method of the light-emitting device which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing method of the light-emitting device which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing method of the light-emitting device which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing method of the light-emitting device which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing method of the light-emitting device which concerns on Embodiment 1 of this invention. It is a top view which shows the light-emitting device concerning Embodiment 2 of this invention. It is sectional drawing in the II-II 'line | wire of the light-emitting device shown in FIG. It is a perspective view which shows the light-emitting device which concerns on Embodiment 3 of this invention. It is sectional drawing in the III-III 'line of the light-emitting device shown in FIG. It is a perspective view which shows the light-emitting device which concerns on Embodiment 4 of this invention. It is sectional drawing in the IV-IV 'line | wire of the light-emitting device shown in FIG.

  The best mode for carrying out the present invention will be described below with reference to the drawings. However, the form shown below illustrates the light-emitting device for embodying the technical idea of the present invention, and the present invention does not limit the light-emitting device to the following.

  Further, the present specification by no means specifies the member shown in the claims as the member of the embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention only to the extent that there is no specific description. It is just an example. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate.

<Embodiment 1>
An example of the light emitting device according to Embodiment 1 of the present invention is shown in FIGS.
1 is a perspective view of a light emitting device 100 according to Embodiment 1 of the present invention, FIG. 2 is a plan view of the light emitting device 100 shown in FIG. 1, and FIG. 3 is a cross-sectional view taken along the line II ′ of FIG. is there.

  In this embodiment, the light-emitting device 100 includes a base 101, conductive members 102A and 102B provided on the base 101, a silver-containing film 103 provided on at least part of the conductive members 102A and 102B, and a silver-containing film 103. A light emitting element 104 whose bottom surface is bonded to the first insulating member 110, a first insulating member 110 provided on the silver-containing film 103, a second insulating member 112 provided on the first insulating member 110, and a light emitting element And a sealing member 108 that further covers 104. Hereinafter, the base 101 and the conductive members 102A and 102B may be collectively referred to as a package 107.

  In the package 107, the base 101 has a recess 109. The recess 109 has a side surface and a bottom surface, and the top surface is an opening. Conductive members 102A and 102B are disposed on the bottom surface of the recess so as to be exposed. The conductive members 102A and 102B are provided so as to be exposed also on the back surface of the base 101. The conductive member 102A disposed on the back surface of the base 101 is provided so as to be electrically continuous with the conductive member 102A disposed on the bottom surface of the recess 109 inside the base. Similarly, the conductive member 102B disposed on the back surface of the base 101 is provided so as to be electrically continuous inside the base with the conductive member 102B disposed on the bottom surface of the recess. A silver-containing film 103 is provided on the surfaces of the conductive members 102 </ b> A and 102 </ b> B exposed at the bottom surface of the recess 109.

  For example, as illustrated in FIG. 4, the light emitting element 104 includes a substrate 104a, a semiconductor structure 104b such as a light emitting layer sequentially stacked on the substrate 104a, and positive and negative electrodes 104c formed on the semiconductor structure 104b. Have. Note that the positive and negative electrodes 104c of the light-emitting element are provided on a surface where a different semiconductor layer is exposed.

In the light-emitting element 104, a patterned metal film or the like can be formed on the lower surface (back surface) of the substrate 104a bonded to the silver-containing film 103. In the example shown in FIG. 3, between the light emitting element 104 and the substrate 101, in order from the lower surface side of the light emitting element 104, for example, a reflective layer 121 made of Ag as a metal film, a barrier layer 122 made of Pt, and a die bond member An adhesive layer 123 made of AuSn, which is a metal eutectic, is disposed. The areas of the reflective layer 121, the barrier layer 122, and the adhesive layer 123 arranged on the lower surface side of the light emitting element 104 are smaller than the area of the back surface of the light emitting element 104 (see FIG. 4).
Further, the Zener diode protective element 105 is fixed on the conductive member 102A by a joining member such as silver paste.

  The positive and negative electrodes 104c of the light emitting element 104 are connected to the silver-containing films 103 on the surfaces of the conductive members 102A and 102B disposed on the bottom surface of the recess 109 by conductive wires 106, respectively.

  In the light emitting device, the first insulating member 110 formed by a dry method is provided on the silver containing film 103 on the conductive members 102A and 102B formed on the bottom surface of the recess except the lower portion of the light emitting element 104. A second insulating member 112 formed by a wet method is provided thereon. The second insulating member 112 is provided so as to cover the first insulating member 110 and to cover a portion of the surface of the silver-containing film 103 where the first insulating member 110 is not formed. For example, the second insulating member 112 includes the silver-containing film 103 positioned below the light emitting element 104, the side surfaces of the reflective layer 121, the barrier layer 122, and the adhesive layer 123 disposed below the light emitting element 104, and the wire 106. The lower surface (rear surface) of is covered. Further, the silver-containing film 103 may have a region where the first insulating member 110 and the second insulating member 112 are partially mixed.

  Further, a sealing member 108 made of a translucent resin or the like is provided inside the recess 109 so as to cover them.

  Since the light-emitting device 100 of the present embodiment can cover the silver-containing film 103 with an insulating member having a good film quality by providing the first insulating member 110 on the silver-containing film 103 by a dry method, Degradation of the silver-containing film 103 can be prevented. The second insulating member 112 provided by a wet method can be formed so as to enter a portion that cannot be covered by the first insulating member 110 provided by a dry method. In addition, since the first insulating member 110 prevents the silver-containing film 103 from being deteriorated, the second insulating member 112 can be thinly provided, and cracks in the second insulating member 112 can be suppressed. As a result, deterioration of silver provided in the light emitting device 100, in particular, sulfidation can be suppressed, and a light emitting device with high output and high reliability can be obtained.

(Method for manufacturing light emitting device)
The light emitting device as described above can be obtained through the steps shown in FIGS. 4-8 is sectional drawing which shows the manufacturing method of the light-emitting device for obtaining the light-emitting device 100 shown in FIG. 1 in order of a process. Note that although one light emitting device is described here, the base body is an aggregate until it is divided in the final process, and the outer surface of the base body 101 is exposed by the division.

  Hereinafter, a method for manufacturing the light emitting device of this embodiment will be described. Details of members to be used will be described later.

(First step)
The first step is a step of providing a silver-containing film 103 on the package 107. The silver-containing film may be provided directly on the substrate 101 or may be provided via another member. The silver-containing film 103 may be provided so as to provide the conductive members 102A and 102B and cover the conductive members 102A and 102B. Thereby, the silver containing film | membrane 103 can be arrange | positioned easily.

Here, a method for providing the light-emitting device with the conductive members 102A and 102B and providing the silver-containing film 103 over the conductive members 102A and 102B will be described.
(Conductive member forming process)
As shown in FIG. 4, the base 101 of the light emitting device 100 in this embodiment has a recess 109. Conductive members 102A and 102B are formed on the bottom surface of the recess 109 so as to be exposed. In addition to using this conductive member as an electrode for energizing, for example, it can be provided on the inner side wall of the recess to give a function as a reflecting member. In addition, the conductive members 102A and 102B can be exposed from the back surface of the base 101 to provide a function as a heat radiating member. These can also have a function as an electrode. Alternatively, it can be electrically cut off from a conductive member used as an electrode.

  The method of forming such conductive members 102A and 102B can be changed as appropriate according to the material of the substrate. For example, in the case of using a ceramic substrate, a conductive paste containing fine particles of a refractory metal such as tungsten or molybdenum applied in a predetermined pattern is fired at the stage of an unfired ceramic green sheet. A member can be obtained. Alternatively, the conductive member can be formed on a pre-fired ceramic plate.

  Further, when a glass epoxy resin substrate is used as the substrate, a copper plate is attached to a prepreg obtained by semi-curing an epoxy resin containing glass cloth or an epoxy resin and thermally cured. Thereafter, a conductive member can be formed in the substrate by patterning a metal member such as copper into a predetermined shape using a photolithography method.

(Silver-containing film formation process)
A silver-containing film 103 is provided on the conductive members 102A and 102B formed as described above. Note that the silver-containing film is preferably provided at least on a portion exposed to the outside of the substrate and irradiated with light from the light-emitting element, but may be provided on a conductive member embedded in the substrate.
As a method for providing the silver-containing film, for example, a plating method, a sputtering method, a vapor deposition method, or the like can be used. When the plating method is used, either electrolytic plating or electroless plating can be used. In the case of providing only on the conductive member, it is most convenient to use the electrolytic plating method after electrically connecting the corresponding parts. In addition, when an electroless plating method, a sputtering method, or a vapor deposition method is used, it can be provided only on the conductive member by a photolithography method.

  The silver-containing film may be provided directly on the conductive member, or may be indirectly provided on the conductive member via a metal not containing silver. Further, after providing a silver-containing film on a conductive member that is not particularly patterned, the conductive member and the silver-containing film may be patterned into a predetermined shape. The silver-containing film only needs to cover at least a part of the surface of the conductive member, but the surface of the conductive member located in the region where the light emitting element is placed is silver-containing in the die bonding process, which is a subsequent process. It is preferable that the film covers the entire surface. Thereby, the light emitted downward from the light emitting element can be reflected upward as the light extraction surface.

(Second step)
In the second step, a light emitting element is placed on the package 107. The light emitting element is bonded onto the package 107 via a die bond member. The light emitting element is preferably provided on the silver-containing film with high reflectivity on the package 107 in order to improve light extraction efficiency.
The die bond member may be formed so as to be interposed between the conductive member and the light emitting element. Therefore, the die-bonding member may be provided on the conductive member in the region where the light-emitting element is placed, the back surface of the light-emitting element, or both.
Below, the case where a resin composition is used as a die-bonding member is demonstrated. Here, a resin composition forming step and a heating step are performed.
(Resin composition forming step)
The resin composition contains rosin (pine resin) or a thermosetting resin. Moreover, you may contain activators, such as a solvent for viscosity adjustment, various additives, and an organic acid, as needed. Moreover, you may contain a powdery metal. The resin composition can be liquid, paste, or solid (sheet, block, or powder), and can be selected as appropriate according to the composition of the resin composition, the shape of the substrate, and the like. Can do.
Hereinafter, a method for forming the resin composition and a method for joining via the resin composition will be described in the case where the portion where the resin composition is formed is a region on the above-described conductive member where the light emitting element is placed.

  As shown in FIG. 4, a liquid or paste-like resin composition 111 is formed on a silver-containing film provided on the conductive member 102. A method of forming a liquid or paste-like resin composition can be appropriately selected from methods such as a potting method, a printing method, and a transfer method according to the viscosity of the resin composition.

  And a light emitting element is mounted on a resin composition. In the case of providing a solid resin composition, it is possible to use a method such as installation on an insulating member in the same manner as mounting a light emitting element. The liquid, paste, or solid resin composition described above may be melted once by heating or the like to fix the light emitting element. Moreover, the said resin composition may be used independently or may be used in combination.

  The amount of the resin composition is preferably adjusted so that after the light emitting element 104 is mounted, the area is equal to or larger than the bonding area of the mounted light emitting element. When mounting a plurality of light-emitting elements using a liquid or paste-like resin composition, the light-emitting elements may move and deviate from a predetermined position due to the surface tension of the liquid or paste-like resin composition. . In order to prevent this, it is desirable to place each light emitting element on an independent resin composition. FIG. 4 shows a state in which the resin composition is formed by adjusting the area so as to be larger than the bonding area of the light emitting element to be mounted. The thickness of the resin composition is preferably adjusted as appropriate depending on the type of resin composition. Moreover, it is preferable to adjust the thickness of the resin composition in consideration of a case where the light-emitting element is crushed and spread laterally, or a case where the resin composition follows along the unevenness of the base material.

  Moreover, it is preferable to contain a conductive member in the resin composition depending on the material of the light emitting element and the bonding method. For example, using a light-emitting element manufactured by stacking a gallium nitride-based semiconductor layer on a conductive silicon (Si) substrate to form a semiconductor structure, the layer on the positive electrode side or the negative electrode side of the light-emitting element is bonded to the bonding surface. When using a light-emitting element manufactured by laminating a gallium nitride based semiconductor layer on a sapphire substrate to form a semiconductor structure, the positive electrode and the negative electrode provided on this semiconductor layer are used as a bonding surface. The conductive member provided on the base and the light emitting element need to be conducted at the joint portion. Therefore, in such a case, it is preferable to mix a conductive member such as a metal having a relatively low melting point in the resin composition.

(Heating process)
The heating step is to heat at a temperature higher than the temperature at which at least a part of the resin composition formed as described above volatilizes. The heating temperature varies depending on the substance contained in the resin composition. For example, when the resin composition contains a thermosetting resin, it is preferable to heat the resin composition to a temperature higher than the temperature at which the resin is cured. Moreover, when the resin composition contains rosin and a low melting point metal is placed on the light emitting element or the silver containing film, it is preferable to heat to a temperature at which the metal melts or higher. Similarly, when the resin composition contains both rosin and a low melting point metal, it is preferably heated to a temperature at which the low melting point metal melts.

  Here, in the case where the resin composition described above contains rosin and a low melting point metal is provided on the light emitting element side, for example, a nitride-based semiconductor light emitting element using a silicon substrate on the silicon substrate side When a metal film is formed on the surface, or when a metal film is formed on the sapphire side surface of a gallium nitride semiconductor light emitting device using a sapphire substrate, the rosin component in the resin composition is heated by heating. The metal bond between the metal film and the silver-containing member can be formed by the function and the phenomenon that the metals tend to diffuse each other. Thereby, a light emitting element can be fixed more firmly. Further, in the case of using a light-emitting element in which a semiconductor structure is formed over a conductive substrate, the conductive member and the light-emitting element can be made conductive.

  In the second step, a washing step can be further performed after the heating step. In particular, when it is desired to remove most or all of the resin residue of the resin composition containing rosin, it is preferable to perform a washing step.

(Wire bonding process)
After the above-described process, a process of electrically connecting the conductive member covered with the silver-containing film and the electrode on the light emitting element with a conductive wire is performed. FIG. 5 shows a state in which a conductive wire is provided.

(Third step)
In the third step, the first insulating member is provided so as to cover the conductive member covered with the silver-containing film in the second step, the light emitting element upper portion, and the conductive wire from above. FIG. 6 shows a state where the third step is completed.

  As shown in FIG. 6, alteration such as sulfidation can be suppressed by covering the silver-containing film with the first insulating member. Therefore, it is preferable to form the insulating member so as to cover a portion of the exposed silver-containing film where a component (such as a sulfur component-containing gas) that alters silver easily reaches from the outside. Specifically, after the light emitting element is placed, it is preferable to cover the portion covered with the light-transmitting sealing member. Moreover, it is preferable to form the first insulating member so as to cover a region having an area of at least 40% or more of the total area of the total exposed region of the silver-containing film. Furthermore, it is more preferable to provide so as to cover almost the entire surface of the exposed silver-containing film. Here, “exposure” refers to a region exposed to the outside of the substrate in a stage after the second step is completed and before the third step is performed. The total exposed region of the silver-containing film is the silver-containing film exposed to the outside such as the top surface, side surface, and back surface of the substrate, and the inner surface (bottom surface, side surface) of the recess in the stage of performing the third step. It indicates the exposed region including the silver-containing film exposed to. Further, in the stage of performing the third step, the surface of the silver-containing film exposed on the inner surface (bottom surface, side surface) of the recess is covered with an area of 90% or more, and almost 100%. Thus, it is preferable to provide the first insulating member.

  In FIG. 6, it forms so that the whole region of the silver containing film 103 exposed from the base | substrate may be covered on the bottom face of a recessed part. Thus, by providing the first insulating member so as to cover almost the entire exposed region of the silver-containing film provided on the bottom surface of the concave portion, the deterioration of the silver-containing film and the accompanying light absorption loss can be suppressed. Can do.

The first insulating member may be provided other than on the silver-containing film. For example, as shown in FIG. 6, the first insulating member 110 is formed on the base 101A exposed between the positive and negative conductive members 102A and 102B on the bottom surface of the concave portion of the base, the side wall 101B of the concave, and the top surface of the base. It can also be provided in 101C or the like.
The first insulating member is preferably made of an inorganic material as will be described later. As a method of forming the first insulating member, a dry film forming method such as a PVD (Physical Vapor Deposition) method such as a sputtering method, a vapor deposition method, or an ion plating method, a CVD (Chemical Vapor Deposition) method, a thermal spraying, a coating treatment or the like. Can be used.

(Fourth process)
In the fourth step, a second insulating member is further provided on the first insulating member formed in the third step by a wet method. FIG. 7 shows a state where the fourth step is completed.
In the third step, by covering the silver-containing film with the first insulating member, alteration such as sulfidation can be suppressed, but in order to further improve the reliability, it is further covered with the second insulating member. It is preferable to do. Moreover, it is preferable to provide a 2nd insulating member in the site | part in which the 1st insulating member is not formed on the base | substrate or the recessed part of a base | substrate, and the site | part which the silver containing film exposed. As shown in FIG. 6, when a part of the outer peripheral portion of the back surface of the light emitting element 104 is separated from the silver-containing film 103 (there is a portion where a reflective layer or the like is not formed on the back surface of the light emitting element, For example, when there is a gap between the silver-containing film 103 and the silver-containing film, the first insulating member applied in the fourth step may not be able to cover the entire exposed region of the silver-containing film 103. In addition, a pinhole or the like may occur in the first insulating member 110 due to various factors. In such a case, the corrosive gas enters from a portion not covered by the first insulating member and causes the silver-containing film to corrode. In the method for manufacturing the light emitting device according to this embodiment, the second insulating member is provided by a wet method so as to cover the silver-containing film exposed in the gaps on the back side of the light emitting element, pinholes, and the like. Thereby, the above-mentioned corrosion etc. can be prevented.
In the third step, after the first insulating member 110 is provided on the silver-containing film 103, the fourth step is performed, so that the second insulating member is easily wetted and spread. The second insulating member can be easily provided on the exposed region of the containing film.

As a material of the second insulating member, a metal oxide sol-gel solution, a liquid in which a water-soluble insulating member is dispersed, or the like can be used. A liquid second insulating member or a solution containing the second insulating member is dropped into the recess. When a part of the outer peripheral portion of the back surface of the light emitting element 104 is separated from the silver-containing film 103, the bottom surface of the light emitting element can be obtained by using the surface tension and wetting spread by dropping the above solution onto the light emitting element. The second insulating member can be filled between the silver-containing film and the silver-containing film. Thereafter, the second insulating member can be formed by a method such as conversion with sol-gel or heat drying.
In addition, when an organic substance is included in the solution, the solution may be dropped and then heated to ash the organic component. Accordingly, the organic substance can be prevented from being deteriorated or colored during use of the light emitting device, and a highly reliable light emitting device can be obtained.

Note that the second insulating member may be provided other than on the first insulating member and the silver-containing film. For example, the second insulating member 110 can be provided on the base 101A exposed between the positive and negative conductive members 102A and 102B, the side wall 101B of the recess, the light emitting element, and the like.
When providing a light reflecting resin, which will be described later, on the side wall of the recess, the wettability of the light reflecting resin is increased by providing the second insulating member on the side wall of the recess and can be easily formed.

(Fifth step)
In the fifth step, a sealing member that covers the light emitting element is formed. FIG. 8 is a view showing that the sealing member 108 is filled in the recess 109 and the light emitting element 104 is covered. Thus, when the recessed part is formed in the base | substrate, it can be set as a sealing member easily by inject | pouring liquid resin in a recessed part. The formed sealing member can be cured by heating, light irradiation, or the like. Conditions for curing the sealing member can be appropriately selected depending on the material of the sealing member to be used. Note that the sealing member can be formed of a single member or can be formed as a plurality of layers of two or more layers.

  In the case where the sealing member is cured by heating, the temperature, temperature, time, atmosphere, and the like of temperature increase or decrease can be appropriately selected. Moreover, when hardening a sealing member by light irradiation, it can select suitably according to the material of the sealing member to be used about light irradiation time, the wavelength of irradiated light, etc. Further, the sealing member may be cured using both heating and light irradiation.

  The structure of each member of the light emitting device of the present invention is described above.

(Substrate)
The base body includes a conductive member for protecting electronic components such as a light emitting element and a protective element and supplying an electric current from the outside to the electronic components.

As a material for the substrate, an insulating member is preferable, and a member that hardly transmits light from the light emitting element or external light is preferable. Moreover, what has a certain amount of intensity | strength is preferable.
Specific examples of the material include ceramics such as Al ₂ O ₃ and AlN, phenol resin, epoxy resin, polyimide resin, BT resin (bismaleimide triazine resin), and resin such as PPA (polyphthalamide). If the substrate material is a resin, mixed with glass fibers or an inorganic filler _{(SiO 2, TiO 2, Al} 2 O 3 , etc.), reduction of improving and coefficient of thermal expansion of the mechanical strength, improvement of the light reflectance Etc. can also be achieved.

(Conductive member)
The conductive member is for electrically connecting the outside and the light emitting element, and a preferable material can be appropriately selected depending on the material of the substrate, the manufacturing method, and the like.

For example, when ceramic is used as the base material, the material of the conductive member is preferably a member having a high melting point that can withstand the firing temperature of the ceramic sheet. Specifically, the conductive member has a high melting point such as tungsten or molybdenum. It is preferable to use metal.
When glass epoxy resin or the like is used as the base material, the material of the conductive member is preferably a material that can be easily processed. Specifically, a metal such as copper, aluminum, gold, silver, tungsten, iron, or nickel. Or iron-nickel alloy, phosphor bronze, iron-containing copper, molybdenum, etc. are mentioned.
When the base is made of an injection-molded epoxy resin, it is preferable that the material of the conductive member has a relatively large mechanical strength. In addition, the material of the conductive member is preferably a member that can be easily processed by punching, etching, bending, and the like and has a relatively large mechanical strength. Specific examples include metals such as copper, aluminum, gold, silver, tungsten, iron, and nickel, or iron-nickel alloys, phosphor bronze, iron-containing copper, molybdenum, and the like. The base and the conductive member may be the same member.

(Silver-containing film)
The silver-containing film is provided on the surface of the conductive member exposed from the substrate. The material of the silver-containing film may be only silver, or an alloy or multilayer film of silver and a metal having high light reflectance such as copper, gold, aluminum, rhodium, etc. It is preferable to comprise. The thickness of the silver-containing film is preferably set to such a thickness that light from the light emitting element can be efficiently reflected, and specifically, about 1 nm to 50 μm is preferable. When the silver-containing film is a multilayer film, the thickness of the entire multilayer film is preferably within this range. As a method for forming the silver-containing film, a plating method, a sputtering method, a vapor deposition method, or the like can be used. The surface of the silver-containing film preferably has a high glossiness in order to increase the reflectance.

  The silver-containing film may be provided on a portion where electricity is not passed, such as a sidewall of the recess. Further, the silver-containing film does not need to cover the entire surface of the conductive member, and a part of the conductive member may be exposed on the base. At this time, it is preferable that the exposed conductive member is covered with a light reflecting resin to be described later.

(First insulating member)
The first insulating member is provided on the silver-containing film by a dry method.
In this specification, the dry method refers to a method of forming a film under reduced pressure without using a liquid such as a solvent, and specifically includes a sputtering method, a vapor deposition method, and the like. Among them, it is possible to form a film so that it also turns to some extent in the shadow part of the light emitting element, etc., due to the high adhesion between the formed film and the object to be coated, the denseness of the film, the ease of controlling the film thickness, etc. The sputtering method is preferable.
In order to prevent a decrease in light extraction efficiency, the first insulating member is preferably provided so as to cover almost the entire region of the silver-containing film exposed to the portion exposed to the light from the light emitting element.

As the material for the first insulating member, in order to effectively use the high reflectance of the silver-containing film, a material having high translucency is preferable, and it is preferable to mainly use an inorganic material. _{Specifically, SiO 2, Al 2 O 3} , TiO 2, ZrO 2, ZnO 2, Nb 2 O 5, MgO, SrO, In 2 O 3, TaO 2, HfO, SeO, oxidation, such as Y 2 _{O 3} And nitrides such as SiN, AlN, and AlON, and fluorides such as MgF ₂ . These may be used alone or in combination. Or you may make it laminate | stack.

  As for the film thickness of the insulating member, it is preferable to make it thin so as not to cause light loss due to multiple reflections at the interface of each member such as sealing resin / insulating member / silver-containing film, while gas such as sulfur passes. A thickness that does not occur is also necessary. The preferred film thickness varies somewhat depending on the material used, but is preferably about 1 nm to 100 nm. In the case of multiple layers, it is preferable that the film thickness of the entire layer be within this range. In addition, it is preferable to form a dense film so that a gas such as sulfur hardly passes.

(Second insulating member)
The second insulating member is formed by a manufacturing method different from that of the first insulating member, specifically, a wet method. In this specification, the wet method refers to a method of forming a film using a solution in which a specific compound is dissolved in a solvent, and specific examples include a sol-gel method and a water glass method.
The second insulating member is provided on the first insulating member provided on the silver-containing film. In order to further prevent the silver from deteriorating, it is preferable to provide it over almost the entire area of the silver-containing film exposed in the concave portion of the base body before the second insulating member is formed. When a part of the outer periphery of the back surface of the light emitting element is not in contact with the silver-containing film (there is a portion where a reflective layer or the like is not formed on the back surface of the light emitting element, and there is a gap between the portion and the silver containing film) Etc.) is preferably covered with a silver-containing film exposed below the light-emitting element. Thereby, deterioration of the silver provided in the vicinity of the light emitting element can be prevented.

The second insulating member may cover the entire light emitting element or the entire inside of the recess. Thereby, the side surface of the light emitting element from which the semiconductor layer is normally exposed can be protected, and the reliability of the light emitting device can be improved.
In addition, the second insulating member is preferably provided so as to fill a space between the lower portion of the light emitting element and the silver-containing film. As a result, when the sealing member is provided, multiple reflections can be prevented, and a sealing member or a bubble having a different coefficient of thermal expansion is prevented from being disposed below the light emitting element. It can suppress that a light emitting element peels.

The second insulating member is preferably an inorganic material that does not deteriorate due to light emission from the light emitting element. As a material for the second insulating member, a metal oxide sol-gel solution, a liquid in which a water-soluble insulating member is dispersed, or the like can be used in consideration of the influence on handling and the environment. Specific examples include polysilazane and an aqueous solution of a silicate material. From the viewpoint of influence on the environment, an aqueous solution of a silicate-based material is preferable because it does not contain volatile organic compounds (VOC). Examples of the silicate material include lithium silicate.
In particular, when a silicate material is used as the material of the second insulating member, the wettability with silver is poor, so that it is difficult to spread on the silver-containing film 103. However, in the present embodiment, the second insulating member 112 is wetted by performing the fourth step after the first insulating member 110 is provided on the silver-containing film 103 in the third step. It becomes easy to spread. Thereby, the second insulating member 112 can be easily formed.

(Light emitting element)
In the present invention, it is preferable to use a light emitting diode as the light emitting element. A light emitting element having an arbitrary wavelength can be selected. For example, as a light emitting element of blue (light of 430 nm to 490 nm) and green (light of 490 nm to 590 nm), ZnSe or a nitride-based semiconductor (In _X Al _Y Ga _1-XY N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1), and those using GaP can be used. As a red light emitting element (light having a wavelength of 620 nm to 750 nm), GaAlAs, AlInGaP, or the like can be used. Furthermore, a light-emitting element made of a material other than this can also be used. The composition, emission color, size, number, and the like of the light-emitting element to be used can be appropriately selected depending on the purpose. Further, a light-emitting element that outputs not only light in the visible light region but also ultraviolet rays and infrared rays can be obtained. Furthermore, a protective element such as a Zener diode or a light receiving element can be mounted together with the light emitting element.

  The light-emitting device according to this embodiment includes a surface-mounted (face-up) light-emitting element. For example, a flip-chip (face-down) light-emitting device like the light-emitting device shown in FIGS. A light emitting element may be provided. In this case, the electrode of the light emitting element is fixed and electrically connected to the silver-containing film on the conductive members 102A and 102B in the recess through a metal bump such as Au or an adhesive layer such as AuSn. In the case of such a face-down type, the light emitting device can be made wireless, light absorption by the wire can be prevented, and light can be efficiently extracted from the light emitting surface side.

(Metal film)
A metal film may be partially formed on the lower surface (back surface of the substrate) of the light emitting element of the present invention.

  The metal film preferably has a reflectance of 50% or more, 70% or more, and further 80% or more with respect to light emitted from the light emitting element. When the electrode is formed on the back surface of the substrate, the metal film is preferably formed on the electrode. However, the electrode and / or the metal film may have both functions.

The metal film can be formed of, for example, a single layer film or a laminated film such as Al, Ag, Au, and Pd. Various methods, such as a vapor deposition method, a sputtering method, and a plating method, can be used as the method for forming the metal film.
In addition, it is preferable that the barrier layer which prevents the spreading | diffusion of a die-bonding member is formed in the lower surface (surface by the side of a die-bonding member) of a metal film. The barrier layer can be formed of, for example, a material having a high melting point such as Mo, W, or Rh, or a single layer film or a laminated film such as Pt, Ni, Rh, or Au. As a method for forming the barrier layer, various known methods such as a vapor deposition method, a sputtering method, and a plating method can be used.
When this metal film is silver, it is preferable to cover the silver at the end of the metal film with the first insulating member or the second insulating member. Thereby, it is possible to prevent deterioration of silver at the end of the metal film, and to achieve a highly reliable light emitting device. Since the second insulating member is provided by a wet method, the metal film can be easily covered.

(Die bond member)
The die bond member is a member for joining a light emitting element, a protective element, or the like via a silver-containing film member on the conductive member in the recess of the base.

  As the die bond member, either a conductive die bond member or an insulating die bond member can be selected depending on the material of the substrate of the light emitting element. For example, in the case of a light-emitting element in which a nitride semiconductor layer is stacked on a sapphire substrate, which is an insulating substrate, to form a semiconductor structure, the die bond member can be either insulating or conductive. Moreover, when using the SiC substrate etc. which are conductive substrates, a silver containing film and a light emitting element can be electrically connected by using a conductive die-bonding member.

  As the insulating die-bonding member, for example, a thermosetting resin such as an epoxy resin or a silicone resin can be used. When these resins are used, it is preferable to provide a metal film with high light reflectance such as Al or Ag on the back surface of the light emitting element in consideration of deterioration due to light or heat from the semiconductor light emitting element. In this case, as a method for forming the metal film, an evaporation method, a sputtering method, a method for bonding a thin film, or the like can be used.

  As the conductive die-bonding member, a conductive paste obtained by mixing silver, gold, palladium, or the like with a resin, solder such as Au—Sn eutectic, or a brazing material such as a metal having a low melting point can be used. Further, among these insulating and conductive die bond members, in particular, when a translucent die bond member is used, a fluorescent member that absorbs light from the light emitting element and emits light of a different wavelength is included therein. You can also.

  By using a metal for the die bond material, heat radiation from the light emitting element can be increased. In addition, conduction to the light-emitting element can be achieved. When a metal film is provided on the back surface (surface to be bonded) of the light-emitting element, the light-emitting element can be bonded by metal bonding with the metal film. Strength can be improved.

  When the die bond member contains rosin, the light emitting element can be bonded after the first insulating member is formed on the silver-containing film. That is, by the action of rosin contained in the die bond member, the first insulating member is removed only at the portion where the die bond member is disposed, and the light emitting element and the silver-containing film are directly joined without going through the first insulating member. be able to. Thereby, the metal film provided on the back surface of the light emitting element and the silver-containing film can be firmly fixed by metal bonding.

  The die bond member contains rosin, and is made of a second metal having a lower melting point than the metal film, either on the back surface of the light emitting element to be bonded to the die bond member, on the first insulating member, or on the silver-containing film. When a metal bonding member is provided, or when the die bond member contains rosin and a second metal and a metal film is formed on the back surface of the light emitting element to be bonded to the die bond member, the light emitting element is formed on the die bond member. It is desirable to heat the second metal to a temperature higher than that at which the second metal melts. By doing in this way, a light emitting element and a silver containing film can be firmly fixed and made conductive by metal bonding using a metal having a low melting point.

  Further, for example, a metal film of Au—Sn is formed on the surface of the metal film provided on the back surface of the light emitting element by a sputtering method or the like, and this metal film is mounted on a die bond member including rosin provided on a silver-containing film. The light emitting element and the silver-containing film can be joined by melting Au—Sn by placing and reflow heating.

The light emitting element may be bonded without using a die bonding member. For example, a metal film made of silver or the like is formed on the back surface of the light-emitting element, and the metal film is placed on the silver-containing film through rosin and heated at a predetermined temperature for bonding.
As described above, when rosin is used for bonding of the light-emitting elements, it is preferable to remove the rosin component remaining in the light-emitting device by cleaning or the like after the light-emitting elements are bonded. As this cleaning liquid, for example, a glycol ether organic solvent is preferable.
The light emitting device of the present invention may be provided with other members.

(Conductive wire)
The conductive wire connects the electrode of the light emitting element and the conductive member disposed in the recess of the base via a silver-containing film. As materials, various metals such as gold, copper, platinum, and aluminum, and alloys thereof can be used. Among them, it is preferable to use gold having excellent heat resistance.

(Sealing member)
The sealing member is a member that protects the light emitting element, the conductive wire, and the like placed on the upper surface of the base and the concave portion of the base from dust, moisture, external force, and the like, and is a transparent member that can transmit light from the light emitting element. What has optical property is preferable. Specifically, a silicone resin, an epoxy resin, a urea resin, etc. are mentioned. In addition to such materials, for example, a colorant, a light diffusing agent, a filler, a wavelength conversion member (fluorescent member), and the like can be contained.

  The filling amount of the sealing member may be an amount that covers an electronic component such as a light emitting element or a protective element, a conductive wire, or the like. In order to minimize the filling amount of the sealing member, the surface of the sealing member has a substantially flat shape. When the sealing member is provided with a lens function, the surface of the sealing member may be raised to form a bullet shape or a convex lens shape.

(Wavelength conversion member)
The sealing member can also contain a fluorescent member that emits light having a different wavelength by absorbing at least part of the light from the light emitting element as the wavelength converting member. The fluorescent member may be formed of a single type of fluorescent material or the like, or may be formed of a single layer in which two or more types of fluorescent material are mixed, or contains one type of fluorescent material, etc. Two or more single layers may be stacked, or two or more single layers each of which is mixed with two or more kinds of fluorescent substances may be stacked.

As the fluorescent member, for example, any member that absorbs light from a light emitting element having a nitride semiconductor as a light emitting layer and converts the light into light having a different wavelength may be used. As the fluorescent material, for example, a nitride-based phosphor or an oxynitride-based phosphor that is mainly activated by a lanthanoid element such as Eu or Ce can be used. More specifically, (a) alkaline earth halogen apatite, alkaline earth metal borate halogen, alkaline earth metal aluminate mainly activated by lanthanoid-based elements such as Eu and transition metal-based elements such as Mn Phosphors such as salts, alkaline earth metal silicates, alkaline earth metal sulfides, alkaline earth metal thiogallate, alkaline earth metal silicon nitride, germanate, and (b) lanthanoid elements such as Ce Phosphors such as rare earth aluminates, rare earth silicates, alkaline earth metal rare earth silicates activated, phosphors such as organic or organic complexes mainly activated by lanthanoid elements such as (c) Eu It is preferable that it is at least any one selected from these. Of these, YAG (Yttrium Aluminum Garnet) phosphors, which are rare earth aluminate phosphors mainly activated by lanthanoid elements such as Ce, are preferred. YAG-based phosphors include Y ₃ Al ₅ O ₁₂ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, Y ₃ (Al _0.8 Ga _0.2 ) ₅ O ₁₂ : Ce , (Y, Gd) ₃ (Al, Ga) ₅ O _{12 and the} like. Alternatively, Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce, or the like in which part or all of Y is substituted with Tb, Lu, or the like may be used. Furthermore, phosphors other than the above phosphors and having the same performance, function, and effect can be used.

<Embodiment 2>
FIG. 9 is a plan view showing a light emitting device 200 according to Embodiment 2 of the present invention. 10 is a cross-sectional view taken along the line II-II ′ of FIG.
In this embodiment mode, the light-emitting device 200 is provided over at least a part of a base body 201 provided with a recess having a side surface and a bottom surface, conductive members 202A and 202B provided on the base body 201, and conductive members 202A and 202B. Provided on the silver-containing film 203, the light-emitting element 204 whose bottom surface is bonded to the silver-containing film 203, the first insulating member 210 provided on the silver-containing film 203, and the first insulating member 210. The second insulating member 212 and the sealing member 208 that further covers the light emitting element 204 are mainly provided.
The light emitting device 200 may be provided with a light blocking member 230 having a function of reflecting light from the light emitting element 204. In the present embodiment, as shown in FIG. 10, the light shielding member 230 covers the side wall of the concave portion of the base body 201 that surrounds the periphery of the light emitting element 204. By providing the light blocking member 230 having a light reflecting function on the side wall of the recess, light loss due to light leakage from the base body 201 or light absorption by the base body 201 can be suppressed. The light emitting device of the present invention may further have a second recess 229. In this embodiment mode, the concave portion is further provided in the first concave portion 219 on which the light emitting element is placed, and has a bottom surface at a position lower than the bottom surface of the first concave portion 219. A second recess 229. A light shielding member is provided so as to cover the conductive member provided on the bottom surface of the second recess 229.
Hereinafter, a configuration mainly different from the first embodiment will be described.

(Light-shielding member)
As shown in FIG. 10, the light shielding member 230 is provided so as to cover a part of the silver-containing film 203. The light shielding member 230 is preferably provided on the silver-containing film 203 via the first insulating member 210. Such a configuration can be provided by providing the first insulating member 210 after the light emitting element 204 is placed on the silver-containing film 203 and then forming the light reflecting resin 230. By doing in this way, since an insulating member can be provided also on the silver containing film | membrane 203 buried in the light-shielding member 230, discoloration of silver can be suppressed more effectively. Moreover, the 1st insulating member 210 becomes a protective film and can suppress silver migration. Moreover, the adhesive force with the light-shielding member 230 can be raised by selecting the material of the base | substrate 201 and electroconductive member 202A, 202B suitably.

  As a specific material constituting the light blocking member 230, an insulating member is preferable, and a member that hardly transmits or absorbs light from the light emitting element, light from the outside, or the like is preferable. In addition, a thermosetting resin, a thermoplastic resin, or the like can be used as one having relatively high strength. Specifically, a resin such as a phenol resin, an epoxy resin, a BT resin, PPA, or a silicone resin is used as a base, hardly absorbs light from the light emitting element, and has a large refractive index difference with respect to the base resin. By dispersing a powder such as a reflecting member (for example, titanium oxide, alumina, zinc oxide, magnesium oxide), light can be efficiently reflected.

When a member other than the light emitting element 204 and the silver-containing film 203, such as the conductive members 202 </ b> A and 202 </ b> B, a protective element, and the like are exposed on the base 201, it is preferable to cover with a light shielding member 230. Thereby, the light extraction efficiency can be improved.
Such a light shielding member can be formed using a potting method, a printing method, a drawing method, or the like.
In the light emitting device of the present invention, the light blocking member 230 is preferably provided after the second insulating member 212 is provided. Thereby, it is possible to prevent light from being blocked by the light blocking member 230 by the second insulating member 212 and to extract light satisfactorily.

(Second recess)
The second recess 229 is a recess further provided in the first recess 219 and has a bottom surface at a position lower than the bottom surface of the first recess 219. In this embodiment, the conductive members 202A and 202B are provided on the bottom surface of the second recess 229, and the light shielding member 230 is provided in the second recess 229 so as to cover the conductive members 202A and 202B. Filled. In the second recess 229, the first insulating member 210 and the second insulating member 212 may be provided between the conductive members 202A and 202B and the light blocking member 230.

The conductive member provided on the bottom surface of the second recess 229 is preferably used as an electrode for supplying power to the light-emitting element 204. In this case, a conductive member may be provided as a pair of positive and negative electrodes in one second concave portion 229 or a plurality of second concave portions 229, or a conductive member as either positive or negative electrode may be provided. May be. When a conductive member is provided in the second recess 229 as either positive or negative electrode, the other electrode may be a conductive member provided on the bottom surface of the first recess 219 or another second recess. The conductive member provided on the bottom surface of 229 can be used. For example, one of the conductive wires from the light emitting element is connected to the conductive member (positive electrode) provided on the bottom surface of the first recess, and the other is connected to the conductive member (negative electrode) provided in the second recess. Thus, conduction may be achieved.
One or more of the second recesses 229 can be provided on the bottom surface of the first recess 219, and the size of the opening is such that the placement of the light emitting element 204 is not hindered (opened). Caliber). The position to be provided is not particularly limited. For example, as shown in FIG. 9 and the like, the first shape of the opening portion having a substantially track shape (rounded rectangular shape) is formed on two opposite sides of the bottom surface of the substantially rectangular first recess 219. Two second recesses 229 can be provided, one for each of the two recesses 229. Here, the two second recesses 229 have the same size and shape, and are provided at symmetrical positions as shown in FIG. 9. However, the present invention is not limited to this, and second areas having different openings, different sizes, etc. The recess 229 may be used. In any second recess 229, the conductive member is provided in the same manner, but it is not necessary to use all of them for conduction.

  In the light emitting device 300 according to the present embodiment described above, the silver-containing film is protected by the first insulating member, and the second insulating member is provided on the first insulating member by a wet method. Degradation of the contained film can be prevented. In addition, since the first insulating member 310 prevents the silver-containing film 303 from being deteriorated, the second insulating member 312 can be thinly provided, and cracks in the second insulating member 312 can be suppressed. Thereby, deterioration of the silver-containing film 303, in particular, sulfidation can be suppressed, and a light-emitting device with high output and high reliability can be obtained.

<Embodiment 3>
FIG. 11 is a perspective view showing a light emitting device 300 according to Embodiment 3 of the present invention. 12 is a cross-sectional view taken along line III-III ′ of FIG.
The light emitting device 300 of this embodiment includes a package 307 having a base 301 and conductive members 302A and 302B, a silver-containing film 303 provided on at least a part of the conductive members 302A and 302B, and a silver-containing film 303. The light emitting element 304 to which the bottom surface is bonded, the first insulating member 310 provided on the silver-containing film 303, the second insulating member 312 provided on the first insulating member 310, and the light emitting element 304 are further provided. And a sealing member 308 to be covered.
The package 307 has a recess 309 for accommodating the light emitting element on the conductive members 302A and 302B. The base 301 forms a side wall of the recess 309 and a part of the bottom surface of the recess 309. The conductive members 302 </ b> A and 302 </ b> B are covered with a base body 301 and form the bottom surface of the recess together with the base body 301. A silver-containing film 303 is provided on the conductive members 302A and 302B. In the recess 309, the light emitting element 304 is placed on the silver-containing film 303 provided on the conductive member 302A. The light emitting element 304 is electrically connected to the silver-containing film 303 via the conductive wire 306.
A first insulating member 310 is provided on the silver-containing film 303 exposed on the bottom surface of the recess 309 by a vapor deposition method that is a dry method. A second insulating member 312 is provided on the first insulating member 310 so as to cover the base 301, the silver-containing film 303, and the light emitting element 304 in the recess 309.
A sealing member 308 made of a translucent resin or the like is formed so as to cover the base body 301, a part of the conductive members 302A and 302B, the light emitting element 304, and the conductive wire 306.
Hereinafter, a configuration mainly different from the first embodiment will be described.

(Substrate)
The base 301 is a member capable of reflecting light from the light emitting element 304 and is provided so as to fill a space between a pair of positive and negative conductive members 302A and 302B.
As a material constituting the base 301, a resin such as a thermosetting resin or a thermoplastic resin can be used. Specifically, epoxy resin composition, silicone resin composition, modified epoxy resin composition such as silicone modified epoxy resin, modified silicone resin composition such as epoxy modified silicone resin, polyimide resin composition, modified polyimide resin composition, etc. I can give you.
These resins can contain an acid anhydride, an antioxidant, a release agent, a light reflecting material, an inorganic filler, a curing catalyst, a light stabilizer, and the like. For example, when titanium dioxide is used as the light reflecting material, the titanium dioxide is preferably filled at 10 to 60 wt%.

(Conductive member)
The conductive members 302A and 302B are preferably plated, and more preferably have a laminated structure of plated. Examples of the material of the conductive members 302A and 302B include metals or alloys such as copper, aluminum, gold, silver, tungsten, iron, nickel, cobalt, and molybdenum (for example, iron-nickel alloy, phosphor bronze, iron-containing copper, Au -Eutectic solder such as Sn, solder such as SnAgCu, SnAgCuIn, etc.), oxide conductor (for example, ITO, etc.) and the like. Note that in the case where the conductive members 302A and 302B have a stacked structure, a silver-containing film may be provided as the uppermost layer of the conductive members 302A and 302B.

  In the light emitting device 300 according to the present embodiment described above, the silver-containing film is protected by the first insulating member, and the second insulating member is provided on the first insulating member by a wet method. Degradation of the contained film can be prevented. In addition, since the first insulating member 310 prevents the silver-containing film 303 from being deteriorated, the second insulating member 312 can be thinly provided, and cracks in the second insulating member 312 can be suppressed. Thereby, deterioration of the silver-containing film 303, in particular, sulfidation can be suppressed, and a light-emitting device with high output and high reliability can be obtained.

<Embodiment 4>
FIG. 13 is a perspective view showing a light emitting device 400 according to Embodiment 4 of the present invention. 14 is a cross-sectional view taken along line IV-IV ′ of FIG.
The light emitting device 400 of this embodiment includes a base having a recess 409 by injection molding a resin such as PPA on a lead frame obtained by plating a silver-containing film 403 on the surface of conductive members 402A and 402B obtained by punching and molding iron-containing copper. The configuration is the same as that of the first embodiment except that 401 is provided.
The light-emitting device 400 of this embodiment includes a package 407 including a base 401 and conductive members 402A and 402B, a silver-containing film 403 provided on at least a part of the conductive members 402A and 402B, and a silver-containing film 403. The light emitting element 404 to which the bottom surface is bonded, the first insulating member 410 provided on the silver-containing film 403, the second insulating member 412 provided on the first insulating member 410, and the light emitting element 404 are further provided. And a sealing member 408 to be covered.
Conductive members 402A and 402B are provided on the side surface of the base body 401 so as to be exposed. The conductive member 402A disposed on the side surface of the base is provided so as to continue to the conductive member 402A disposed on the bottom surface of the recess 409 inside the base. The conductive member 402B disposed on the side surface of the base body 401 is provided so as to be electrically continuous with the conductive member 402B disposed on the bottom surface of the recess 409 inside the base body. Thus, the conductive members 402A and 402B can function as terminals that are electrically connected to the outside.
The silver-containing film 403 is continuously provided on the surfaces of the conductive members 402 </ b> A and 402 </ b> B exposed on the bottom surface of the recess 409 and the surfaces of the conductive members 402 </ b> A and 402 </ b> B included in the base body 401.
A first insulating member 410 is provided on the silver-containing film 403 exposed on the bottom surface of the recess 409 by a dry method. Then, a second insulating member 412 is provided on the first insulating member 410 by a wet method so as to cover the base body 401, the silver-containing film 403, and the light emitting element 404 in the recess 409.
A sealing member 408 made of a translucent resin or the like is formed so as to cover the base body 401, a part of the conductive members 402A and 402B, the light emitting element 404, and the conductive wire 406.
Also in the light-emitting device 400 according to this embodiment, deterioration of the silver-containing film, in particular, sulfidation can be suppressed, and a light-emitting device with high output and high reliability can be obtained.

  The light-emitting device according to the present invention can be used for various display devices, lighting fixtures, displays, backlight light sources for liquid crystal displays, as well as image reading devices and projector devices in facsimile machines, copiers, scanners, and the like.

100, 200, 300, 400 Light emitting device 101, 201, 301, 401 Substrate 101A Substrate exposed portion 101B Recessed sidewall 101C Upper surface 102A, 102B, 202A, 202B, 202C, 302A, 302B, 402A, 402B Conductive member 103, 203, 303, 403 Silver-containing film 104, 204, 304, 404 Light-emitting element 105, 305, 405 Protection element 106, 206, 306, 406 Conductive wire 107, 207, 307, 407 Package 108, 208, 308, 408 Seal Stop member 109, 209, 309, 409 Recess 219 First recess 229 Second recess 110, 210, 310, 410 First insulating member 111 Resin composition 112, 212, 312, 412 Second insulating member 121 Reflection Layer 122 barrier layer 123 contact Layer

Claims (13)

A first step of providing a silver-containing film on the package;
A second step of bonding the bottom surface of the light emitting element on the silver-containing film;
A third step of providing a first insulating member on the silver-containing film;
A fourth step of providing a second insulating member on the first insulating member by a manufacturing method different from that of the first insulating member;
A fifth step of forming a sealing member covering the light emitting element;
A method for manufacturing a light emitting device.   The method for manufacturing a light emitting device according to claim 1, wherein, in the third step, the first insulating member is provided by a dry method.   3. The method for manufacturing a light emitting device according to claim 1, wherein in the fourth step, the second insulating member is provided by a wet method.   The method for manufacturing a light emitting device according to claim 1, wherein the dry method is sputtering or vapor deposition.   The method for manufacturing a light-emitting device according to claim 1, wherein the wet method is a sol-gel method or a water glass method.   The method for manufacturing a light emitting device according to claim 1, wherein the first insulating member is a metal oxide.   The method for manufacturing a light emitting device according to claim 1, wherein the second insulating member is a silicate-based material. In the second step, at least the peripheral part of the bottom surface of the light emitting element and the silver-containing film are separated from each other,
The method for manufacturing a light emitting device according to claim 1, wherein in the fourth step, the second insulating member is provided so as to cover a silver-containing film below the light emitting element. . In the second step, bonding is performed using a metal film partially provided on the bottom surface of the light emitting element and a heat-meltable die bond material,
In the fourth step, the metal film contains silver, and the second insulating member is provided so as to cover the silver-containing film and the metal film below the light emitting element. The manufacturing method of the light-emitting device of Claim 8. A substrate;
A silver-containing film provided on the substrate;
A light-emitting element placed on the silver-containing film;
A first insulating member that covers a part of the surface of the light emitting element and the silver-containing film, and a portion where the first insulating member is not formed are provided to cover the first insulating member. A second insulating member made of a material different from
A sealing member further covering the light emitting element;
A light emitting device.   The at least peripheral part of the bottom face of the light emitting element and the silver containing film are separated, and the second insulating member is provided so as to cover the silver containing film below the light emitting element. The light emitting device according to 1.   The light emitting device according to claim 10, wherein the first insulating member is a metal oxide.   The light emitting device according to claim 10, wherein the second insulating member is a silicate material.

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