JP2012094587A - Method for manufacturing optical semiconductor device and optical semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing an optical semiconductor device capable of keeping high reflectivity by preventing the discoloration of a silver-plated layer, and being excellent in productivity, and the optical semiconductor device manufactured by the manufacturing method.SOLUTION: In the method for manufacturing an optical semiconductor device 100, in a thin film 50 formed on a wiring member 10 by a transfer formation, parts of the thin film 50 corresponding to a region where the optical semiconductor element 20 is mounted and a region where a bonding wire 18 is connected, are removed. Thereby since only the parts of thin film 50 corresponding to the region where the optical semiconductor element 20 is mounted and the region where the bonding wire 18 is connected, are removed, the discoloration of the silver-plated layer of another part can be prevented by the thin film 50 and the high reflectivity in the silver-plated layer can be kept. Since a gold-plating is not employed, the manufacturing cost can be reduced and the optical semiconductor device 100 can be excellent in productivity.

Description

  The present invention relates to an optical semiconductor manufacturing method and an optical semiconductor device manufactured by the manufacturing method.

  An optical semiconductor device such as an LED (Light Emitting Diode) light emitting device, as shown in FIG. 8, for example, is a light emitting element such as an LED in a mounting recess 220a of a light reflecting layer 220 formed on a wiring member 210 of a package 200. 230 is mounted, and the mounting recess 220 is sealed with a transparent sealing material 240. In the package 200, one end of the lead frame 250 is disposed at the bottom in the mounting recess 220, and the other end is provided so as to protrude outward from the package 200. The light emitting element 230 is mounted by mounting the light emitting element 230 on the lead frame 250 and performing wire bonding 260.

  In such a semiconductor light emitting device, part of the light emitted from the light emitting element 230 is reflected by the surface of the lead frame 250 located in the mounting recess 220 and emitted from the opening of the mounting recess 220. Become. Therefore, a silver plating layer having the highest light reflectance is provided on the surface of the lead frame 250, and the surface of the lead frame 250 is formed to have a high reflectance so as to increase the light emission efficiency of the semiconductor light emitting device.

Here, the transparent sealing material 240 is generally made of a soft silicone resin that hardly deteriorates with respect to the heat and ultraviolet light of the LED element. Soft silicone is discoloration of the resin itself is not moisture permeable ^{(106,000CC (STP) cm 2 mm} sec cm · Hg × 10 10) and gas permeability (oxygen permeability 1000~6000CC (STP) ^cm 2 mm sec cm · Hg × 10 ¹⁰ ) is high. Therefore, there is a problem that the surface of the silver plating layer is discolored by sulfuration. With regard to this problem, for example, Patent Document 1 discloses a method of performing gold and silver alloy plating on the plating surface via palladium.

JP 2009-272345 A

  However, as described in Patent Document 1, the method of performing gold and silver alloy plating through palladium improves the resistance to sulfidation, but has the most important reflectance for the LED characteristics as compared with silver plating. There was a problem that the cost was reduced by using gold plating.

  The present invention has been made to solve the above-described problems, and can prevent discoloration of a silver plating layer and maintain a high reflectance, and a method for manufacturing an optical semiconductor device excellent in productivity and its An object of the present invention is to provide an optical semiconductor device manufactured by the manufacturing method.

  In order to solve the above problems, a method for manufacturing an optical semiconductor device according to the present invention includes a light reflecting layer having a plurality of through holes formed by transfer molding using a thermosetting resin composition on a surface of a silver plating layer. Forming a resin thin film on the wiring member formed on the formed wiring member, and obtaining a molded body having a plurality of recesses formed by closing one opening of the through hole with the wiring member; and an optical semiconductor A step of removing the resin thin film in a portion corresponding to a region where the element is mounted and a region where the bonding wire is connected, a step of arranging a plurality of optical semiconductor elements in the recesses, and a surface of the light reflecting layer are covered A step of supplying a sealing resin to the concave portion in which the semiconductor element is disposed, a step of curing the sealing resin, and a step of dividing the molded body into the concave portions to obtain a plurality of optical semiconductor devices. Characterize

  In this method of manufacturing an optical semiconductor device, in a resin thin film formed on a wiring member on which a silver plating layer is formed by transfer molding, it corresponds to a region where an optical semiconductor element is mounted and a region where a bonding wire is connected The resin thin film at the part to be removed is removed. Thus, only the resin thin film formed in the region where the optical semiconductor element is mounted and the region where the bonding wire is connected, that is, the portion corresponding to the conductor member, is removed. Therefore, other portions are covered with a resin thin film having low gas permeability, so that discoloration of the silver plating layer due to sulfuration can be prevented. Therefore, a high reflectance can be maintained in the silver plating layer. Further, since gold plating is not used, the cost can be reduced and the productivity of the optical semiconductor device can be improved.

  In the step of removing the resin thin film, it is preferable to remove the resin thin film by dry processing or wet processing. Thus, the resin thin film can be removed favorably by using the wet and dry treatment or the wet chamber treatment.

  In the step of removing the resin thin film, the resin thin film can be removed using any one of a carbon dioxide laser, a YAG laser, and a semiconductor laser. In the step of removing the resin thin film, the resin thin film can be removed using media blasting.

  An optical semiconductor device according to the present invention is manufactured using the above-described method for manufacturing an optical semiconductor device. By manufacturing an optical semiconductor device by the above-described method, discoloration of the silver plating layer can be prevented and high reflectance can be maintained, and productivity can be improved.

  ADVANTAGE OF THE INVENTION According to this invention, discoloration of a silver plating layer can be prevented and a high reflectance can be hold | maintained, and the optical semiconductor device excellent in productivity can be obtained.

1 is a plan view showing an optical semiconductor device according to an embodiment of the present invention. It is the II-II sectional view taken on the line of the optical semiconductor device shown in FIG. It is sectional drawing which shows the manufacturing method of the optical semiconductor device which concerns on one Embodiment of this invention. It is a top view which shows the procedure of the subsequent process of FIG. It is a top view which shows the molded object after the process of FIG. It is a top view which shows the molded object after the process of FIG. FIG. 5 is a cross-sectional view showing the procedure of the subsequent step of FIG. 4. It is sectional drawing which shows the conventional optical semiconductor device.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the description, the same reference numerals are used for the same elements or elements having the same function, and redundant description is omitted.

[Optical semiconductor device]
FIG. 1 is a plan view showing an optical semiconductor device according to an embodiment of the present invention. 2 is a cross-sectional view of the optical semiconductor device shown in FIG. 1 taken along line II-II. In addition, in FIG. 1, illustration of the sealing body mentioned later is abbreviate | omitted.

  As shown in each drawing, the optical semiconductor device 100 includes a wiring member 10, an optical semiconductor element 20, a light reflecting layer 30, and a sealing body 40. The optical semiconductor device 100 is generally classified into a surface mount type (SMD: Surface Mount Device type).

  As the wiring member 10, it is preferable to use a lead frame formed by a known method. For example, a lead frame such as a 42 alloy lead frame or a copper lead frame is used. The wiring member 10 has a rectangular shape, for example, and includes conductor members 14a and 14b.

  The conductor members 14a and 14b are made of metal. The conductor member 14 a is disposed from one end to the other end in the longitudinal direction of the wiring member 10 at the approximate center in the short direction of the wiring member 10. Three conductor members 14 b are arranged at each of both ends in the short direction of the wiring member 10, and each conductor member 14 b is elongated in the longitudinal direction of the wiring member 10. The respective conductor members 14b are arranged apart from each other and are arranged so as to be symmetric with respect to the conductor member 14a, apart from the conductor member 14a. Although not shown in FIG. 2, the surface of the wiring member 10 (conductor members 14a and 14b) is silver-plated to form a silver-plated layer.

  A white resin layer 16 is disposed between the conductor member 14a and the conductor member 14b. The white resin layer 16 is formed of the same resin as the light reflection layer 30 described later.

  Three optical semiconductor elements 20 are mounted on the conductor member 14a via, for example, a die bond material (not shown), and are arranged in the longitudinal direction of the wiring member 10 apart from each other. The surface of each optical semiconductor element 20 is electrically connected by a bonding wire 18 to each of the conductor members 14b located symmetrically with the conductor member 14a interposed therebetween. The optical semiconductor element 20 emits light when electric power is supplied through the bonding wire 18, and the light is emitted from a lens (not shown) through the sealing body 40. The optical semiconductor element 20 is not particularly limited, and elements such as a GaN-based blue element or a green element, a GaP-based green element, an orange element, or a GaAs-based red element can be used.

  The light reflecting layer 30 is a substantially rectangular parallelepiped member having a through-hole 30 a formed therein by four side walls disposed on the wiring member 10 along the outer edge portion of the wiring member 10. The through hole 30a is formed so that the opening becomes smaller from the front surface 30b to the back surface (surface on the wiring member 10 side) of the light reflecting layer 30 when the four side walls of the light reflecting layer 30 are inclined. The light reflecting layer 30 constitutes an optical semiconductor element mounting substrate together with the wiring member 10, and a recess (cavity portion) 32 is formed by closing the opening on the back side of the through hole 30 a by the wiring member 10. Has been. When the inside of the recess 32 is viewed from the surface 30 b side of the light reflecting layer 30, the three optical semiconductor elements 20 are exposed at the bottom of the recess 32. That is, the bottom of the recess 32 corresponds to the optical semiconductor element mounting region.

  The sealing body 40 is formed by supplying a light-transmitting sealing resin (translucent sealing resin) to the inside of the recess 32 and the surface 30 b of the light reflecting layer 30. Examples of the sealing resin include an epoxy resin, an acrylic resin, a urethane resin, a silicone resin, and modified resins thereof. Among them, the coloring and deterioration are suppressed, and the bonding wire 18 is disconnected due to thermal stress due to the stress relaxation effect. Since the reliability can be further improved since it is suppressed, a gel-like or rubber-like silicone resin is preferred, and a gel-like or rubber-like dimethyl silicone resin is more preferred. Examples of the dimethyl silicone resin include KJR-9022X-5, KER-2600 (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.), OE-6351, JCR6115, JCR6110 (trade name, manufactured by Toray Dow Corning Co., Ltd.), XE-14. -C2042, IVS4012, IVS5022 (a product name made by Momentive Performance Materials, Inc.), etc. can be used. A phosphor may be added to the sealing resin as necessary. The elastic modulus at room temperature (25 ° C.) of the sealing resin is preferably 0.001 to 10 MPa from the viewpoint of improving heat resistance, light resistance, and stress relaxation effect. In addition, the elasticity modulus of sealing resin can be measured using the penetration (JIS K 2220 1/4 cone) and rubber hardness (JIS type A).

The thin film (resin thin film) 50 is formed so as to cover a portion other than the region where the optical semiconductor element 20 is mounted and the region where the bonding wire 18 is connected. The thin film 50 has a thickness of about 0.01 to 5 μm, and its gas permeability is about 0.49 to 16 CC (STP) cm ² mm sec cm · Hg × 10 ^{10 for} oxygen. The thin film 50 is formed across a part (end part) of the conductor member 14 a and a part of the conductor member 14 b so as to cover the white resin layer 16. That is, the thin film 50 is formed over a region where the optical semiconductor element 20 is mounted and a region where the bonding wire 18 is connected. Such a thin film 50 is formed over the entire surface with the same resin as the white resin layer 16 on the wiring member 10 when the light reflecting layer 30 is formed by transfer molding. Therefore, the thin film 50 is formed by selectively removing the region where the optical semiconductor element 20 is mounted and the region where the bonding wire 18 is connected.

As a dry method (dry process) for removing the thin film 50, a laser can be used. Examples of the laser that can be used include a carbon dioxide laser, a YAG laser, and an excimer laser (semiconductor laser). A carbon dioxide laser is preferable from the viewpoint of productivity. The laser light irradiation conditions are preferably those that oscillate in a pulse shape with a short time and a large output. For example, the width of one pulse is 1 μsec to 40 μsec, the pulse repetition frequency is 150 Hz to 10,000 Hz, and the number of repetition pulses is An output laser oscillator capable of removing the film under conditions of 1 Hz to 10 pulses and an output magnitude in the range of 2 to 5 pulses is preferable because oscillation and control are easy. This output, in the energy density in ^the range of ^{1J / cm 2 ~40J / cm 2} . If the output per hour is less than the above range, the resin layer cannot evaporate and diverge, and if it exceeds the above range, the terminal surface will be removed more than necessary and control is difficult, and once evaporated resin Or metal may smear and adhere, and the attached smear must be removed. A smear may be generated by the carbon dioxide laser, but in that case, it can be removed by plasma treatment. As a method of removing by plasma treatment, a batch type or a normal pressure plasma line type can be used.

  Moreover, as a wet method (wet process) for removing the thin film 50, a media blast method in which alumina particles or silica particles are removed by spraying in a slurry state can be used. At this time, the blasting conditions can be # 200 to # 2000, 0.5 m / min to 3.0 m / min, 0.1 MPa to 4.0 MPa.

[Method for Manufacturing Optical Semiconductor Device]
Next, a method for manufacturing the optical semiconductor device 100 according to the present embodiment will be described with reference to FIGS. FIG. 3 is a cross-sectional view illustrating a method for manufacturing an optical semiconductor device according to an embodiment of the present invention. FIG. 4 is a plan view showing the procedure of the subsequent process of FIG. FIG. 5 is a plan view showing the molded body after the step of FIG. FIG. 6 is a plan view showing the molded body after the step of FIG. FIG. 7 is a cross-sectional view showing the procedure of the subsequent step of FIG.

  First, after forming a circuit using a known method such as a method of photo-etching a copper foil, Ni / Ag plating is applied to the surface of the circuit to form conductor members 14a and 14b, and FIG. As shown in FIG.

  Next, a mold 60 having a concave portion in which a plurality of light reflecting layers 30 having concave portions 32 are arranged in a matrix (for example, 10 vertical × 16 horizontal) is prepared, as shown in FIG. Then, the mold 60 is disposed on the wiring member 10. Next, a thermosetting resin composition is injected from a resin injection port (not shown) of the mold 60 to form the light reflecting layer 30 on the wiring member 10. The light reflecting layer 30 is formed by transfer molding, and a MAP (Mold Array Package) method can be used. After injecting the thermosetting resin composition, the thermosetting resin composition is cured by maintaining the mold temperature at 180 ° C. for 90 seconds, for example. Note that it is preferable to reduce the pressure in the mold 60 during transfer molding because the resin filling property is improved. After the light reflecting layer 30 is formed, the thermosetting resin composition may be after-cured by heating at a temperature of 120 to 180 ° C. for 1 to 3 hours, for example. As a result, as shown in FIG. 4A, a molded body 70 in which a plurality of light reflecting layers 30 each having a recess 32 is formed is formed, and a white resin layer 16 is formed between the conductor members 14a and 14b. Further, as shown in FIG. 5, a thin film 50 is formed so as to cover the conductor members 14a and 14b and the white resin layer 16 (on the wiring member 10).

  Subsequently, the thin film 50 formed on the wiring member 10 (conductor members 14a and 14b) by transfer molding is selectively removed. For example, a carbon dioxide laser is used to remove the thin film 50. With this carbon dioxide laser, as shown in FIG. 4B, the thin film 50 corresponding to the region where the optical semiconductor element 20 is mounted and the region where the bonding wire 18 is connected is removed.

  Subsequently, for example, a die bond material is applied onto the conductor member 14a in the recess 32, and the three optical semiconductor elements 20 are arranged side by side on the die bond material. Then, as shown in FIG. 4B, the surface of each optical semiconductor element 20 is electrically connected to the conductor member 14 b using a bonding wire 18. As a mounting method, not only a wire bond method but also a flip chip method may be used. As described above, as shown in FIGS. 6A and 6B, the three optical semiconductor elements 20 are mounted on the bottom of each recess 32 in the molded body 70.

  Next, the sealing body 40 is formed by potting as follows. As shown in FIG. 7A, a sealing resin is supplied into each recess 32 to form a sealing body 40 that seals the optical semiconductor element 20.

  Then, as shown in FIG. 7B, the molded body in which a plurality of optical semiconductor devices 100 are integrally connected is divided (divided into pieces) for each of the recesses 32 to obtain a plurality of optical semiconductor devices 100 shown in FIG. . For the division, an optical semiconductor device (SMD type optical semiconductor device) having one or a plurality of optical semiconductor devices can be obtained by dividing by a known method such as dicing, laser processing, water jet processing, or die processing. it can.

  Next, the thermosetting resin composition (mold material) that forms the light reflecting layer 30 of the optical semiconductor device 100 will be described in detail. The thermosetting resin composition contains (A) an epoxy resin, (B) a curing agent, (C) a curing accelerator, (D) a white pigment, (E) an inorganic filler, and (F) a coupling agent. Is preferred.

[Thermosetting resin composition]
(A): Epoxy resin (hereinafter sometimes referred to as “component (A)”)
As an epoxy resin, what is generally used as an epoxy resin molding material for electronic component sealing can be used, for example. Specifically as an epoxy resin,
A novolak type epoxy resin obtained by epoxidizing a novolak resin obtained by a reaction between a phenol and an aldehyde (phenol novolak type epoxy resin, orthocresol novolak type epoxy resin, etc.);
Bisphenol type epoxy resins (bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, alkyls) obtained by the reaction of bisphenols such as bisphenol A, bisphenol F, bisphenol S, and alkyl-substituted bisphenols with diglycidyl ether Substituted bisphenol type epoxy resin, etc.);
Glycidylamine type epoxy resin obtained by reaction of polyamine such as diaminodiphenylmethane and isocyanuric acid with epichlorohydrin;
A linear aliphatic epoxy resin obtained by oxidizing an olefin bond of an unsaturated hydrocarbon resin such as polybutadiene with a peroxide such as peracetic acid;
1,2-cyclohexanedicarboxylic acid, 1,3-cyclohexanedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid, phthalic acid, tetrahydrophthalic acid, methyltetrahydrophthalic acid, nadic acid, methylnadic acid, nuclear hydrogenated trimellitic acid, Glycidyl ester type epoxy resin obtained by reaction of polycarboxylic acid such as nuclear hydrogenated pyromellitic acid with epichlorohydrin;
A polyorganosiloxane having an epoxy group;
An alicyclic epoxy resin having an alicyclic ring (saturated hydrocarbon ring) such as a cyclohexane skeleton or an epoxycyclohexane skeleton (for example, 1,2-epoxy-4 of 2,2-bis (hydroxymethyl) -1-butanol) -(2-oxiranyl) cyclohexane adduct);
Etc. These can be used alone or in combination of two or more.

  As an epoxy resin, 1,2-epoxy-4- (2-oxiranyl) cyclohexane adduct of 2,2-bis (hydroxymethyl) -1-butanol; bisphenol A type epoxy resin; bisphenol F type epoxy resin; bisphenol S Diglycidyl isocyanurate; triglycidyl isocyanurate; 1,2-cyclohexanedicarboxylic acid, 1,3-cyclohexanedicarboxylic acid or dicarboxylic acid diglycidyl ester derived from 1,4-cyclohexanedicarboxylic acid; It is preferable because of relatively little coloring.

  For the same reason, diglycidyl esters of dicarboxylic acids such as phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, methyltetrahydrophthalic acid, nadic acid and methylnadic acid are also suitable.

  The nuclear hydrogenation means having an aromatic hydrogenated alicyclic ring. In addition, the polyorganosiloxane having an epoxy group epoxidizes a polyorganosilane produced by heating and hydrolyzing and condensing a silane compound in the presence of an organic solvent, an organic base and water. Can be obtained.

Moreover, as an epoxy resin, the epoxy resin shown by following formula (1) which is a copolymer of a glycidyl (meth) acrylate monomer and this and a polymerizable monomer can also be used.

In formula (1), R ¹ represents a glycidyl group, R ² represents a hydrogen atom or a methyl group, R ³ represents a hydrogen atom or a saturated or unsaturated monovalent hydrocarbon group having 1 to 6 carbon atoms. , R ⁴ represents a monovalent saturated hydrocarbon group. a and b represent a positive integer.

  From the viewpoint of suppressing resin contamination, the 2,2-bis (hydroxymethyl) -1-butanol adduct of 1,2-epoxy-4- (2-oxiranyl) cyclosoxane is desirable as the epoxy resin. As the resin, a product name EHPE3150 manufactured by Daicel Chemical Industries, Ltd. is available as a commercial product.

  In order to suppress coloration of the cured product, the epoxy resin is a cycloaliphatic selected from cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, norbornene, dicyclopentadiene, adamantane, hydrogenated hydronaphthalene and hydrogenated biphenyl. An alicyclic epoxy resin having an alicyclic ring derived by removing a hydrogen atom from an aromatic hydrocarbon is also preferred. The alicyclic ring may be substituted with a halogen atom or a linear or branched hydrocarbon group.

(B): Curing agent (hereinafter referred to as “component (B)” in some cases)
The thermosetting resin composition preferably contains a polyvalent carboxylic acid condensate as a curing agent. In the present specification, the “polycarboxylic acid condensate” means a polymer formed by condensation of one or more polycarboxylic acids having two or more carboxyl groups between molecules. More specifically, the polyvalent carboxylic acid condensate has an acid anhydride group (an acid anhydride bond) formed by dehydration condensation between carboxy groups of two or more monomers having two or more carboxy groups. ) And each monomer unit is linked in a chain or cyclic manner by the generated acid anhydride group. On the other hand, “an acid anhydride compound that can be obtained by dehydrating and condensing a carboxyl group of a polyvalent carboxylic acid in a molecule” means that a carboxyl group of a polyvalent carboxylic acid having two or more carboxyl groups is dehydrated and condensed in the molecule. It means an acid anhydride compound in which an acid anhydride group is generated and a cyclic structure including the generated acid anhydride group is formed.

The polyvalent carboxylic acid condensate is usually composed of a plurality of components having different degrees of polymerization, and may include a plurality of components having different constitutions of repeating units and terminal groups. Polyvalent carboxylic acid condensate, the compound is preferably (in the formula comprising as a main component represented by the following formula (2), R ⁵ represents a divalent organic _group, the R ⁶ is a monovalent organic group N ¹ represents an integer of 1 or more, and n ¹ is preferably an integer of 1 to 200. Preferably, the proportion of the component of formula (2) is 60% by mass or more based on the total amount of the polyvalent carboxylic acid condensate.

In Formula (2), R ⁵ is preferably a divalent group having an alicyclic ring, and more preferably a divalent saturated hydrocarbon group having an alicyclic ring. When R ⁵ is a divalent saturated hydrocarbon group having an alicyclic ring, the polyvalent carboxylic acid condensate can form a transparent cured product of an epoxy resin. When n ¹ is an integer of 2 or more, a plurality of R ⁵ in the same molecule may be the same as or different from each other. The alicyclic ring of R ⁵ may be substituted with a halogen atom or a linear or branched hydrocarbon group. The hydrocarbon group which is a substituent of the alicyclic ring is preferably a saturated hydrocarbon group. The alicyclic ring may be a single ring or a condensed ring, a polycyclo ring, a spiro ring or a ring assembly composed of two or more rings. R ⁵ preferably has 3 to 15 carbon atoms.

R ⁵ is a group derived by removing a carboxyl group from a polyvalent carboxylic acid as a monomer used to obtain a compound (polymer) represented by the formula (2). The polyvalent carboxylic acid as a monomer preferably has a boiling point higher than the reaction temperature of polycondensation.

More specifically, R ⁵ is a cyclic saturated hydrocarbon selected from the group consisting of cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, norbornene, dicyclopentadiene, adamantane, hydrogenated hydronaphthalene and hydrogenated biphenyl. From the above, a divalent group derived by removing a hydrogen atom is preferable. When R ⁵ is these groups, the effect of obtaining a cured product that is transparent and less colored by heat is more remarkably exhibited. These cyclic saturated hydrocarbons may be substituted with a halogen atom or a linear or branched hydrocarbon group (preferably a saturated hydrocarbon group).

In particular, R ⁵ is preferably a group derived from 1,2-cyclohexanedicarboxylic acid, 1,3-cyclohexanedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid or a derivative thereof except for a carboxyl group. That is, R ⁵ is preferably a divalent group represented by the following formula (3). In formula (3), m shows the integer of 0-4. R ⁷ represents a halogen atom or a linear or branched hydrocarbon group having 1 to 4 carbon atoms. When m is 2 to 4, a plurality of R ⁷ may be the same or different and may be connected to each other to form a ring.

R ⁶ which is a terminal group in the formula (2) is preferably a monovalent hydrocarbon group which may be substituted with an acid anhydride group or a carboxylic ester group. Two R ⁶ may be the same or different. R ⁶ may be a monovalent group derived by removing a carboxyl group from a linear, branched or cyclic C 2-15 aliphatic or aromatic monocarboxylic acid (benzoic acid or the like). Good.

R ⁵ is preferably a monovalent group represented by the following formula (4), or cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, norbornene, dicyclopentadiene, adamantane, hydrogenated naphthalene and hydrogen It is more preferably a monovalent group derived by removing a hydrogen atom from a cycloaliphatic hydrocarbon selected from conjugated biphenyl. By R ⁶ being these groups, the effect of obtaining a cured product with less coloring due to heat is more remarkably exhibited. Further, when R ⁶ is these groups, the concentration of carboxylic acid residues in the polyvalent carboxylic acid condensate can be reduced, and dispersion of molecular weight can be suppressed.

R ⁵ may be a divalent group represented by the above formula (3), and at the same time, R ⁶ may be a monovalent group represented by the above formula (4). That is, the polyvalent carboxylic acid condensate may contain a compound represented by the following formula (2a) as a component represented by the formula (2). In the formula, n ¹ , m and R ⁷ are as defined above. When n ¹ is an integer of 2 or more, a plurality of m may be the same as or different from each other.

Moreover, as a hardening | curing agent, the component represented by following formula (2b) can also be used as a component represented by Formula (2).

In the formula, n ² represents an integer of 1 or more, and R ⁸ represents a divalent group having an alicyclic ring. The alicyclic ring may be substituted with a halogen atom or a linear or branched hydrocarbon group. When n ² is an integer of 2 or more, a plurality of R ⁸ may be the same as or different from each other.

Moreover, as a hardening | curing agent, from a viewpoint which the tolerance with respect to alkaline degreasing liquid improves, at least 1 sort (s) chosen from the group which consists of a compound represented by Formula (2b) and a compound represented by following formula (5). A compound is preferably used, and two or more kinds of compounds are preferably used.

In the compound represented by the formula (2b), R ⁸ is preferably a divalent group represented by the following formula (6).

In the formula, m represents an integer of 0 to 4, and R ⁹ represents a halogen atom or a linear or branched hydrocarbon group having 1 to 4 carbon atoms. When m is 2 to 4, a plurality of R ⁹ may be the same or different and may be connected to each other to form a ring.

Moreover, the hardening | curing agent may contain the polyhydric carboxylic acid condensate represented by following formula (7).

  The number average molecular weight Mn of the polyvalent carboxylic acid condensate is preferably 200 to 20000. If Mn is less than 200, the viscosity tends to be too low to make it difficult to suppress the occurrence of resin stains during transfer molding of the thermosetting resin composition, and if it exceeds 20000, the compatibility with the epoxy resin decreases. There exists a tendency for the fluidity | liquidity at the time of the transfer molding of a thermosetting resin composition to decline.

The number average molecular weight Mn used in the present invention can be obtained by measuring under the following conditions using a standard polystyrene calibration curve by gel permeation chromatography (GPC).
(GPC conditions)
Pump: L-6200 type (manufactured by Hitachi, Ltd., trade name)
Column: TSKgel-G5000HXL and TSKgel-G2000HXL (trade name, manufactured by Tosoh Corporation)
Detector: L-3300RI type (manufactured by Hitachi, Ltd., trade name)
Eluent: Tetrahydrofuran Measurement temperature: 30 ° C
Flow rate: 1.0 mL / min

  The curing agent only needs to contain the polyvalent carboxylic acid condensate as described above, and the viscosity of the curing agent measured by an ICI cone plate viscometer is 1.0 mPa · s to 1000 mPa · s at 150 ° C. It is preferable that it is 10 mPa-200 mPa. When the viscosity of the curing agent is within the specific range, for example, when a thermosetting resin composition containing a polyvalent carboxylic acid condensate is used for transfer molding, good moldability can be obtained. As a method of adjusting the viscosity of the curing agent, a method of adjusting the viscosity of the polyvalent carboxylic acid condensate by controlling the average molecular weight of the polyvalent carboxylic acid condensate, or a combination with the polyvalent carboxylic acid condensate can be used. The method of adjusting the compounding ratio with a hardener is mentioned.

  The viscosity of the polyvalent carboxylic acid condensate desirable for adjusting the viscosity of the curing agent is preferably 10 mPa · s to 30000 mPa · s at 150 ° C., more preferably 10 mPa · s to 10000 mPa · s at 150 ° C. . When the viscosity of the polyvalent carboxylic acid condensate at the above temperature is less than 10 mPa · s, the effect of suppressing the occurrence of resin stains at the time of transfer molding tends to be low, and when it exceeds 30000 mPa · s, the inside of the mold at the time of transfer molding The fluidity of the thermosetting resin composition tends to decrease. The viscosity of the polyvalent carboxylic acid condensate is, for example, that of Research Equipment (LonCon) LTC. It can be measured using a manufactured ICI cone plate viscometer.

  In the thermosetting resin composition, the content of the polyvalent carboxylic acid condensate having a molecular weight of 500 to 5000 in terms of number average molecular weight is 5 to 50% by mass based on the total amount of the component (A) and the component (B). It is preferable that it is 10-30 mass%.

The polycarboxylic acid condensate can be obtained by dehydration condensation in a reaction solution containing a polycarboxylic acid and a monocarboxylic acid used as necessary. For example, in a reaction solution containing a polycarboxylic acid represented by the following formula (8) and a monocarboxylic acid represented by the following formula (9), a step of dehydrating and condensing each carboxyl group between molecules is provided. It can be obtained by the method.

  The dehydrating condensation reaction liquid is, for example, a polyhydric carboxylic acid and a monocarboxylic acid, and a dehydrating agent selected from acetic anhydride or propionic anhydride, acetyl chloride, an aliphatic acid chloride, and an organic base (such as trimethylamine) that dissolve them. Containing. For example, after the reaction solution is refluxed in a nitrogen atmosphere for 5 to 60 minutes, the temperature of the reaction solution is increased to 180 ° C., and acetic acid is generated in an open system under a nitrogen stream (when acetic anhydride is used as a dehydrating agent). ) And water are distilled off to allow polycondensation to proceed. When generation of volatile components is no longer observed, polycondensation proceeds in a molten state at a temperature of 180 ° C. for 3 hours, more preferably for 8 hours while reducing the pressure in the reaction vessel. The produced polyvalent carboxylic acid condensate may be purified by recrystallization or reprecipitation using an aprotic solvent such as acetic anhydride.

  In the dehydration condensation reaction, the reaction conditions can be appropriately changed so as to obtain the desired ICI corn plate viscosity, number average molecular weight, and softening point, and the reaction conditions are not limited to those shown here.

  The polycarboxylic acid condensate obtained by such a method is a condensate of two molecules of a monocarboxylic acid of formula (9), a condensate of a polycarboxylic acid of formula (8) and a monocarboxylic acid of formula (9) , Unreacted products of polycarboxylic acids and monocarboxylic acids, and acid anhydrides such as acid anhydrides formed by the condensation reaction of polycarboxylic acids or monocarboxylic acids with reaction reagents such as acetic anhydride and propionic anhydride. Product. These by-products may be removed by purification, or may be used as a curing agent in a mixture.

  The polyvalent carboxylic acid condensate used in the present invention is a charged composition ratio of the polyvalent carboxylic acid and the monocarboxylic acid before the condensation reaction, and the ICI corn plate viscosity, number average molecular weight and softening point of the product depending on the purpose. Can be adjusted. As the ratio of polyvalent carboxylic acid increases, the ICI cone plate viscosity, number average molecular weight, and softening point tend to increase. However, depending on the reaction conditions, the condensation does not necessarily exhibit the above-mentioned tendency, and it is necessary to take into account the reaction temperature, the degree of reduced pressure, and the reaction time, which are the conditions for the dehydration condensation reaction.

  The softening point of the polyvalent carboxylic acid condensate is preferably 20 ° C to 200 ° C. Thereby, when disperse | distributing an inorganic filler using a 2 roll mill etc. in the resin composition containing a polyhydric carboxylic acid condensate, favorable dispersibility and workability | operativity are obtained. The excellent dispersibility of the inorganic filler is particularly important in a thermosetting resin composition for transfer molding and the like. Moreover, from the viewpoint of kneadability when producing a thermosetting resin composition using a roll mill, the softening point of the polyvalent carboxylic acid condensate is preferably 30 ° C to 80 ° C, and preferably 30 ° C to 50 ° C. More preferably. When the softening point is less than 20 ° C., the handling property, kneading property and dispersibility are lowered during the production of the thermosetting resin composition, and it is difficult to effectively suppress the occurrence of resin stains during transfer molding. When the softening point exceeds 200 ° C., the curing agent may remain undissolved in the resin composition when heated to 100 to 200 ° C. by transfer molding, and it tends to be difficult to obtain a uniform molded body.

  The softening point of the polyvalent carboxylic acid condensate can be set to a desired range by selecting the structure of the main chain and adjusting the number average molecular weight. Generally, when a long-chain divalent carboxylic acid is used as a monomer, the softening point can be lowered, and when a highly polar structure is introduced, the softening point can be raised. In general, the softening point can be lowered by increasing the number average molecular weight.

  As the curing agent, it may further contain an acid anhydride formed by ring-closing condensation of polyvalent carboxylic acid in the molecule, and is generally used in epoxy resin molding materials for electronic component sealing together with the polyvalent carboxylic acid condensate. The hardening agent currently used can be used together. Moreover, such an acid anhydride can be used alone as a curing agent. Such a curing agent is not particularly limited as long as it reacts with the epoxy resin, but is preferably colorless or light yellow. Examples of such a curing agent include an acid anhydride curing agent, an isocyanuric acid derivative curing agent, and a phenol curing agent.

  Examples of the acid anhydride curing agent include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methyl nadic anhydride, nadic anhydride, glutaric anhydride. Examples include acid, dimethyl glutaric anhydride, diethyl glutaric anhydride, succinic anhydride, methyl hexahydrophthalic anhydride, and methyl tetrahydrophthalic anhydride.

  Isocyanuric acid derivatives include 1,3,5-tris (1-carboxymethyl) isocyanurate, 1,3,5-tris (2-carboxyethyl) isocyanurate, 1,3,5-tris (3-carboxypropyl) ) Isocyanurate, 1,3-bis (2-carboxyethyl) isocyanurate.

  Examples of the phenolic curing agent include bisphenol A, bisphenol F, polyvinylphenol, phenol novolac resin, bisphenol A novolac resin, halides and hydrides of these phenol resins. Of these, bisphenol A novolac resins are preferred because of their excellent heat resistance.

  Among these curing agents, phthalic anhydride, trimellitic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, glutaric anhydride, dimethyl glutaric anhydride, diethyl glutaric anhydride or 1 , 3,5-tris (3-carboxypropyl) isocyanurate is preferably used. Moreover, the said hardening | curing agent may be used individually by 1 type or in combination of 2 or more types. When these curing agents that can be used in combination are included, the viscosity of the curing agent as a whole can be adjusted by changing the blending ratio with the polyvalent carboxylic acid condensate, which is preferable.

  The above-described curing agent that can be used in combination preferably has a molecular weight of 100 to 400. In addition, acid anhydrides having no aromatic ring (for example, anhydrides obtained by hydrogenating all unsaturated bonds of an aromatic ring) rather than acid anhydrides having an aromatic ring such as trimellitic anhydride and pyromellitic anhydride. preferable. As the acid anhydride curing agent, an acid anhydride generally used as a raw material for the polyimide resin may be used.

  In the thermosetting resin composition, the compounding amount of the curing agent is preferably 1 to 150 parts by mass with respect to 100 parts by mass of the component (A), and 10 to 150 masses from the viewpoint of suppressing resin contamination. Part is more preferable, and 50 to 120 parts by mass is even more preferable.

  The curing agent has an active group (acid anhydride group or hydroxyl group) in the curing agent capable of reacting with the epoxy group in an amount of 0.3 to 1.2 with respect to 1 equivalent of the epoxy group in the component (A). Is more preferably 0.5 to 0.9 equivalent, and most preferably 0.7 to 0.8 equivalent. If the said active group is less than 0.3 equivalent, while the cure rate of a thermosetting resin composition will become slow, the glass transition temperature of the hardened | cured material obtained will become low, and there exists a tendency for sufficient elasticity modulus to become difficult to be obtained. On the other hand, when the active group exceeds 1.2 equivalents, the strength after curing tends to decrease.

(C): Curing accelerator (hereinafter referred to as “component (C)” in some cases)
A hardening accelerator can be mix | blended with a thermosetting resin composition as needed. As a hardening accelerator, if it has a catalyst function which accelerates | stimulates hardening reaction between (A) component and (B) component, it can use without being specifically limited.

  Examples of the curing accelerator include amine compounds, imidazole compounds, organic phosphorus compounds, alkali metal compounds, alkaline earth metal compounds, and quaternary ammonium salts. Among these curing accelerators, it is preferable to use an amine compound, an imidazole compound, or an organic phosphorus compound. Examples of the amine compound include 1,8-diaza-bicyclo (5,4,0) undecene-7, triethylenediamine, and tri-2,4,6-dimethylaminomethylphenol. Examples of the imidazole compound include 2-ethyl-4-methylimidazole. Furthermore, examples of the organic phosphorus compound include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetra-n-butylphosphonium-o, o-diethylphosphorodithioate, tetra-n-butylphosphonium-tetrafluoroborate, tetra -N-butylphosphonium-tetraphenylborate. These curing accelerators may be used alone or in combination of two or more.

  It is preferable that the compounding quantity of a hardening accelerator is 0.01-8 weight part with respect to 100 mass parts of (A) component, and it is more preferable that it is 0.1-3 mass part. When the blending amount of the curing accelerator is less than 0.01 parts by mass, a sufficient curing accelerating effect may not be obtained, and when it exceeds 8 parts by mass, discoloration may be seen in the obtained molded body.

(D): White pigment (hereinafter referred to as “component (D)” in some cases)
When used as a white molding resin that can be used in an optical semiconductor device or the like, the thermosetting resin composition preferably further contains a white pigment. As a white pigment, a well-known thing can be used and it does not specifically limit. Examples of the white pigment include alumina, magnesium oxide, antimony oxide, titanium oxide, zirconium oxide, and inorganic hollow particles. These can be used alone or in combination of two or more. Examples of the inorganic hollow particles include sodium silicate glass, aluminum silicate glass, borosilicate soda glass, and shirasu (white sand). The white pigment preferably has a central particle size of 0.1 μm to 50 μm. If the central particle size is less than 0.1 μm, the particles tend to aggregate and the dispersibility tends to decrease. When it exceeds, the reflective property of the hardened | cured material which consists of a thermosetting resin composition will become difficult to be acquired fully.

  Although the compounding quantity of a white pigment is not specifically limited, It is preferable that it is 10-85 volume% with respect to the whole thermosetting resin composition, and it is more preferable that it is 20-75 volume%. If the blending amount is less than 10% by volume, the light-reflecting properties of the cured thermosetting resin composition tend not to be sufficiently obtained. There is a tendency to decrease.

  Moreover, when the thermosetting resin composition contains the inorganic filler described later together with the white pigment, the total blending amount of the white pigment and the inorganic filler is 10 to 85 volumes with respect to the entire thermosetting resin composition. %, The moldability of the thermosetting resin composition can be further improved.

(E): Inorganic filler (hereinafter referred to as “component (E)” in some cases)
The thermosetting resin composition preferably contains an inorganic filler in order to adjust moldability. In addition, you may use the thing similar to the said white pigment as an inorganic filler. Examples of the inorganic filler include silica, antimony oxide, titanium oxide, aluminum hydroxide, magnesium hydroxide, barium sulfate, magnesium carbonate, barium carbonate, alumina, mica, beryllia, barium titanate, potassium titanate, and strontium titanate. , Calcium titanate, aluminum carbonate, aluminum silicate, calcium carbonate, calcium silicate, magnesium silicate, silicon nitride, boron nitride, calcined clay, etc., talc, aluminum borate, aluminum borate, silicon carbide . In view of thermal conductivity, light reflection characteristics, moldability and flame retardancy, the inorganic filler is selected from the group consisting of silica, alumina, magnesium oxide, antimony oxide, titanium oxide, zirconium oxide, aluminum hydroxide, and magnesium hydroxide. A mixture of two or more selected is preferable. The average particle diameter of the inorganic filler is preferably 1 to 100 μm, more preferably 1 to 40 μm, from the viewpoint of improving packing properties with the white pigment. It is preferable that the compounding quantity of the inorganic filler in a thermosetting resin composition is 1-1000 mass parts with respect to 100 mass parts of total amounts of (A) component and (B) component, and 1-800 mass parts. It is more preferable that

(F): Coupling agent (hereinafter referred to as “component (F)” in some cases)
In the thermosetting resin composition, (A) to (C) components, which are thermosetting resin components, and the viewpoint of improving the adhesion between the (D) component and the (E) component added as necessary. Therefore, it is preferable to add a coupling agent. Although it does not specifically limit as a coupling agent, For example, a silane coupling agent and a titanate coupling agent are mentioned. Examples of the silane coupling agent generally include epoxy silane, amino silane, cationic silane, vinyl silane, acryl silane, mercapto silane, and composites thereof, and can be used in any amount. In addition, it is preferable that the compounding quantity of a coupling agent is 5 mass% or less with respect to the whole thermosetting resin composition.

  Moreover, you may add additives, such as antioxidant, a mold release agent, and an ion-trapping agent, to a thermosetting fat composition as needed.

  As described above, in the method of manufacturing the optical semiconductor device 100, the thin film 50 formed on the wiring member 10 by transfer molding corresponds to the region where the optical semiconductor element 20 is mounted and the region where the bonding wire 18 is connected. The portion of the thin film 50 is removed. As a result, only the thin film 50 formed in the region where the optical semiconductor element 20 is mounted and the region where the bonding wire 18 is connected, that is, the portion corresponding to the conductor member 14a and the conductor member 14b that require electrical connection, is removed. It is. Therefore, since the other part is covered with the thin film 50 with low gas permeability, discoloration of the silver plating layer due to sulfuration can be prevented. Therefore, a high reflectance can be maintained in the silver plating layer. Further, since gold plating is not used, the cost can be reduced and the productivity of the optical semiconductor device 100 can be improved.

  EXAMPLES Hereinafter, although an Example explains this invention in full detail, this invention is not limited to these Examples.

Example 1
[Preparation of thermosetting resin composition for light reflecting layer]
The thermosetting resin composition was prepared by mixing each component by the following compounding ratio (mass part), and performing roll kneading on the conditions of kneading | mixing temperature 20-50 degreeC and kneading | mixing time 10 minutes.
(A) Epoxy resin: trisglycidyl isocyanurate, 43 parts by mass (B) curing agent: hexahydrophthalic anhydride, 53 parts by mass (C) curing accelerator: tetra-n-butylphosphonium-o, o-diethyl phosphorodithio 3 parts by weight (D) white pigment: titanium oxide (center particle size: 0.21 μm) (Ishihara Sangyo Co., Ltd., trade name: CR-63), 222 parts by weight (E) inorganic filler: fused spherical silica ( (Center particle size: 25 μm) (manufactured by Denki Kagaku Kogyo Co., Ltd., trade name: FB-950), 418 parts by mass (E) Inorganic filler: fused spherical silica (center particle size: 0.5 μm) (manufactured by Admatechs, product) Name: SO25R), 29 parts by mass (F) Coupling agent: Trimethoxyepoxysilane (manufactured by Toray Dow Corning Co., Ltd., trade name: A-187), 1.2 parts by mass (D) Filling amount of white pigment With respect to the total thermosetting resin composition, it was 37.7% by volume.

[Fabrication of optical semiconductor device]
First, a copper circuit was formed on the Cu—Fe alloy C194 by photoetching, followed by silver plating with a thickness of 3 μm to obtain a lead frame with a thickness of 0.15 mm.

  Next, using a transfer molding machine (manufactured by M-Tex Matsumura Co., Ltd., trade name: MF-FS01), the thermosetting resin composition prepared as described above was molded at a mold temperature of 180 ° C., a curing time of 90 seconds, and a molding pressure. Molding was performed by a MAP molding method under a condition of 6.9 MPa, and a light reflecting layer was formed on the lead frame to obtain a substrate for mounting an optical semiconductor device. As the mold, a collective mold having 160 concave portions (cavities) arranged in a matrix of 10 vertical × 16 horizontal is used. The cavity size was 3 mm × 3 mm per unit and the depth was 0.5 mm.

  In the resin thin film generated in the transfer molding, portions corresponding to the region where the optical semiconductor element is mounted and the region where the bonding wire is connected are selectively removed by a carbon dioxide gas laser.

  Subsequently, a die bonding agent (manufactured by Hitachi Chemical Co., Ltd., trade name: EN4620K) is formed on the connecting terminal (conductor member) at the center of the lead frame exposed in each recess of the optical semiconductor device mounting substrate by a stamping method. Printed. Next, an optical semiconductor element (blue element, manufactured by Cree, trade name: EZ700) was placed on the die bond agent. Then, the die bond agent was heat-cured (150 ° C., 1 hour), and the optical semiconductor element was fixed on the connection terminal. And the surface of the optical semiconductor element and the connection terminal (conductor member) arrange | positioned at the side surface side of a lead frame were electrically connected using the gold wire.

  Subsequently, a gel-like silicone transparent sealing resin (manufactured by Momentive Performance Materials, trade name: XE-14-C2042, elastic modulus (room temperature): 0 on the optical semiconductor device mounting substrate using a dispenser. 0.03 MPa) was supplied by the potting method. Thus, the sealing resin layer was formed by filling each recess with the sealing resin.

  After the sealing resin is cured, the optical semiconductor device continuous in a matrix is separated into pieces using a dicing device (trade name: DAD381 manufactured by DISCO Corporation), and a single optical semiconductor device is provided. A plurality of optical semiconductor devices (SMD type LEDs) were manufactured. Since the optical semiconductor device continuous in a matrix form is formed of a soft transparent resin in the molded body, the stress applied to the wire bond of the optical semiconductor element is relaxed and the reliability in the thermal stress applied in the manufacturing process is improved, Peeling between the optical semiconductor mounting substrate and the transparent resin was suppressed. For this reason, the optical semiconductor devices continuous in a matrix are diced well, and a plurality of optical semiconductor devices can be obtained with high productivity.

(Example 2)
The thin film removal process of Example 1 was removed by using PFE-300T (manufactured by Macau) with alumina particles # 2000, an air pressure of 0.25 MPa, a treatment speed of 20 mm / s, a projection angle of 90 °, and a number of treatments of twice. An optical semiconductor device was fabricated in the same manner as Example 1 except for the above.

  DESCRIPTION OF SYMBOLS 100 ... Optical semiconductor device, 10 ... Wiring member, 18 ... Bonding wire, 20 ... Optical semiconductor element, 30 ... Reflective layer, 30a ... Through-hole, 32 ... Recessed part, 40 ... Sealing material (sealing resin), 50 ... Thin film (Thin film resin).

Claims (5)

A transfer reflection using a thermosetting resin composition is used to form a light reflecting layer having a plurality of through holes on a wiring member having a silver plating layer formed on the surface and forming a resin thin film on the wiring member. Obtaining a molded body having a plurality of recesses formed by closing one opening of the through hole with the wiring member;
Removing the resin thin film in a portion corresponding to a region where an optical semiconductor element is mounted and a region where a bonding wire is connected;
Arranging each of the plurality of optical semiconductor elements in the recess,
Supplying a sealing resin to the recess in which the semiconductor element is disposed so as to cover the surface of the light reflecting layer;
Curing the sealing resin;
And a step of dividing the molded body into the recesses to obtain a plurality of optical semiconductor devices.   2. The method of manufacturing an optical semiconductor device according to claim 1, wherein in the step of removing the resin thin film, the resin thin film is removed by a dry process or a wet process.   3. The method of manufacturing an optical semiconductor device according to claim 1, wherein in the step of removing the resin thin film, the resin thin film is removed using any one of a carbon dioxide laser, a YAG laser, and a semiconductor laser.   3. The method of manufacturing an optical semiconductor device according to claim 1, wherein in the step of removing the resin thin film, the resin thin film is removed using media blasting. An optical semiconductor device manufactured using the method for manufacturing an optical semiconductor device according to claim 1.

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