JP5298468B2 - The thermosetting light-reflecting resin composition, an optical semiconductor element mounting board and its manufacturing method and an optical semiconductor device using the same - Google Patents

The thermosetting light-reflecting resin composition, an optical semiconductor element mounting board and its manufacturing method and an optical semiconductor device using the same Download PDF

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JP5298468B2
JP5298468B2 JP2007176206A JP2007176206A JP5298468B2 JP 5298468 B2 JP5298468 B2 JP 5298468B2 JP 2007176206 A JP2007176206 A JP 2007176206A JP 2007176206 A JP2007176206 A JP 2007176206A JP 5298468 B2 JP5298468 B2 JP 5298468B2
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resin composition
semiconductor element
element mounting
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JP2008106226A (en
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光祥 濱田
永井  晃
直之 浦崎
加奈子 湯浅
勇人 小谷
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日立化成株式会社
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thermosetting resin composition for light reflection which is excellent in moldability and can form a cured product having light reflection properties which is less prone to deterioration, and to provide an optical semiconductor element loading substrate and its manufacturing method, as well as an optical semiconductor device. <P>SOLUTION: This thermosetting resin composition for light reflection comprises an epoxy resin (A), a curing agent (B), an inorganic filler (C), a white pigment (D) and a coupling agent (E), wherein the curing agent (B) comprises cyclohexane tricarboxylic anhydride, the cured resin has a photoreflectance of &ge;90% at a wavelength of 800-350 nm, and the resin before curing can be pressure molded at a room temperature (0-35&deg;C). The optical semiconductor element loading substrate using it and its manufacturing method are disclosed. The optical semiconductor device using it is also disclosed. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

本発明は、光半導体素子と蛍光体などの波長変換手段とを組み合わせた光半導体装置に用いる熱硬化性光反射用樹脂組成物、および該熱硬化性光反射用樹脂組成物を用いた光半導体素子搭載用基板とその製造方法、ならびに該光半導体素子搭載用基板を用いた光半導体装置に関する。 The present invention relates to an optical semiconductor device and a thermosetting light-reflecting resin composition for use in an optical semiconductor device that combines a wavelength conversion means such as a phosphor, and an optical semiconductor using thermosetting light-reflecting resin composition substrate and manufacturing method thereof for device mounting, and to an optical semiconductor device using the optical element mounting substrate.

光半導体素子を利用した光半導体装置として、図4に示すような構成のSMD(Surfacemounted device)タイプのLED(Light Emitting Diode)が知られている。 An optical semiconductor device using the optical semiconductor element, the configuration of the SMD, as shown in FIG. 4 (Surfacemounted device) type of LED (Light Emitting Diode) is known. このLEDは、通常、マウント基板リフレクター(光半導体素子搭載用基板)403に形成されたカップ状部(凹部)の、リード404が露出している底面にLED素子(発光素子)400が配置され、さらに当該素子が配置されたカップ状部に蛍光体405を含有する透明封止樹脂402が充填されている。 This LED is normally mounted substrate reflector (optical semiconductor element mounting board) cup-shaped portion formed in 403 (recess), LED elements (light emitting element) 400 is disposed on the bottom surface of the lead 404 is exposed, transparent sealing resin 402 containing a fluorescent material 405 is filled in the further cup-shaped portion in which the elements are arranged. リフレクターは、発光素子から側方に放射された光をその表面で拡散反射して軸方向に分配し、これによって軸上強度を高めることを目的として使用されている。 Reflector distributes axially diffuse reflecting light from the light emitting element emitted laterally on its surface, thereby being used for the purpose of enhancing the on-axis intensity. 特許文献1〜4にはリフレクターが熱可塑性樹脂組成物からなるSMDタイプのLED用形成材料が開示されている。 LED for forming material SMD type reflector is formed of a thermoplastic resin composition in Patent Documents 1 to 4 are disclosed.

このような構造を有するLEDは、高エネルギー効率、長寿命などの利点から、屋外用ディスプレイ、携帯液晶バックライト、車載用途などその需要を拡大しつつあるが、これに伴い、LEDデバイスの高輝度化が進み、素子の発熱量増大によるジャンクション温度の上昇、あるいは直接的な光エネルギーの増大による材料の耐熱劣化・耐光劣化が課題となっている。 LED having such a structure, high energy efficiency, because of advantages such as long life, outdoor displays, portable liquid crystal backlights, there is growing its demand and automotive applications, with this, the high brightness of the LED devices has progressed, rise of junction temperature due to heat generation amount increase of elements, or materials heat aging and light degradation due to increase in direct light energy has become an issue.

また、例えば、特許文献5には、65重量%以上の熱可塑性樹脂と35重量%以下の充填材からなるリフレクター材料が開示されているが、近紫外光の反射率などの特性が十分であるとはいえない。 Further, for example, Patent Document 5, although a reflector material comprising 65 wt% or more of the thermoplastic resin and 35% by weight of the filling material is disclosed, is sufficient characteristics such as the reflectance of the near-ultraviolet light it can not be said.

近紫外光の反射率などの特性に関する課題に対しては、例えば、特許文献6に耐熱試験後の光反射特性に優れる光半導体素子搭載用基板が開示されている。 For issues characteristics such as the reflectance of the near-ultraviolet light, for example, an optical semiconductor element mounting substrate having excellent light reflection characteristics after heat resistance test in Patent Document 6 is disclosed. しかしながら、特許文献6においては、室温におけるタブレット成型性、加熱成形時のバリ発生や硬化性などの成型性に課題があった。 However, in Patent Document 6 it has a problem in moldability such as a tablet moldability, burr and curable upon heating the molding at room temperature.
特開2005−194513号公報 JP 2005-194513 JP 特開2004−277539号公報 JP 2004-277539 JP 特開2004−75994号公報 JP 2004-75994 JP 特開2004−128393号公報 JP 2004-128393 JP 特開2002−314142号公報 JP 2002-314142 JP 特開2006−140207号公報 JP 2006-140207 JP

本発明は、上記に鑑みてなされたものであり、成型性に優れ、硬化物の光反射率特性が劣化し難い熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板とその製造方法および光半導体装置を提供することを目的とするものである。 The present invention has been made in view of the above, excellent in moldability, optical reflectance characteristics are deteriorated hardly thermosetting light-reflecting resin composition of the cured product, an optical semiconductor element mounting substrate using the same it is an object to provide a a method of manufacturing the same and an optical semiconductor device.

すなわち、本発明は下記(1)〜(9)に記載の事項をその特徴とするものである。 That is, the present invention is to its features the matters described in the following (1) to (9).

(1)(A)エポキシ樹脂、(B)硬化剤、(C)無機充填材、(D)白色顔料及び(E)カップリング剤を含む樹脂組成物において、上記(B)硬化剤としてシクロヘキサントリカルボン酸無水物を含み、かつ硬化後の、波長800nm〜350nmにおける光反射率が90%以上であり、硬化前には室温(0〜35℃)において加圧成型が可能であることを特徴とする熱硬化性光反射用樹脂組成物。 (1) (A) epoxy resin, (B) a curing agent, (C) an inorganic filler, (D) in the white pigment and (E) a resin composition containing a coupling agent, the (B) cyclohexanetricarboxylic as a curing agent include acid anhydrides, and after curing, and the light reflectance of 90% or more at a wavelength 800Nm~350nm, characterized in that prior to curing is possible compression molding at room temperature (0 to 35 ° C.) The thermosetting light-reflecting resin composition.

(2)上記シクロヘキサントリカルボン酸無水物が下記構造式(I) (2) The cyclohexane tricarboxylic acid anhydride following structural formula (I)
で表されることを特徴とする上記(1)記載の熱硬化性光反射用樹脂組成物。 (1) The thermosetting light-reflecting resin composition, wherein in represented it.

(3)上記(C)無機充填材が、シリカ、アルミナ、酸化マグネシウム、酸化アンチモン、酸化チタン、酸化ジルコニウム、水酸化アルミニウム、水酸化マグネシウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウムからなる群の中から選ばれる少なくとも1種以上であることを特徴とする上記(1)または(2)記載の熱硬化性光反射用樹脂組成物。 (3) The inorganic filler (C) is silica, alumina, magnesium oxide, antimony oxide, titanium oxide, zirconium oxide, aluminum hydroxide, magnesium hydroxide, barium sulfate, magnesium carbonate, from the group consisting of barium carbonate at least one more than the is characterized in that (1) or (2) the thermosetting light-reflecting resin composition according chosen.

(4)上記(D)白色顔料が、アルミナ、酸化マグネシウム、酸化アンチモン、酸化チタン、酸化ジルコニウム、無機中空粒子からなる群の中から選ばれる少なくとも1種以上であることを特徴とする上記(1)〜(3)のいずれか記載の熱硬化性光反射用樹脂組成物。 (4) above (D) white pigment, alumina, magnesium oxide, antimony oxide, titanium oxide, zirconium oxide, the (1, characterized in that at least one selected from the group consisting of inorganic hollow particles ) ~ the thermosetting light-reflecting resin composition of any one of (3).

(5)上記(D)白色顔料の平均粒径が、1〜50μmの範囲にあることを特徴とする上記(1)〜(4)のいずれか記載の熱硬化性光反射用樹脂組成物。 (5) Average particle diameter of the (D) white pigment, above, characterized in that in the range of 1 to 50 [mu] m (1) ~ thermosetting light-reflecting resin composition of any one of (4).

(6)上記(C)無機充填材と上記(D)白色顔料の合計配合量が、樹脂組成物全体に対して、10体積%〜85体積%の範囲であることを特徴とする上記(1)〜(5)のいずれか記載の熱硬化性光反射用樹脂組成物。 (6) The inorganic filler (C) and (D) above the total amount of the white pigment, relative to the entire resin composition, above, wherein the range of 10 vol% to 85 vol% (1 ) ~ the thermosetting light-reflecting resin composition according to any one of (5).

(7)光半導体素子搭載領域となる凹部が1つ以上形成されている光半導体素子搭載用基板であって、少なくとも上記凹部の内周側面が上記(1)〜(6)のいずれかに記載の光反射用熱硬化性樹脂組成物からなることを特徴とする光半導体素子搭載用基板。 (7) The optical semiconductor element mounting substrate recess to serve as the optical semiconductor element mounting region is formed of one or more inner peripheral side surface of at least the recess according to any one of the above (1) to (6) the optical semiconductor element mounting board, characterized by comprising a light reflecting thermosetting resin composition.

(8)光半導体素子搭載領域となる凹部が1つ以上形成されている光半導体素子搭載用基板の製造方法であって、少なくとも上記凹部を、上記(1)〜(6)のいずれかに記載の光反射用熱硬化性樹脂組成物を用いたトランスファー成型により形成することを特徴とする光半導体素子搭載用基板の製造方法。 (8) A method for manufacturing an optical semiconductor element mounting substrate recess to serve as the optical semiconductor element mounting region is formed at least one, at least the recess, according to any one of (1) to (6) method for manufacturing an optical semiconductor element mounting substrate, which comprises forming by transfer molding using a light reflecting thermosetting resin composition.

(9)上記(7)に記載の光半導体素子搭載用基板または上記(8)に記載の製造方法により製造された光半導体素子搭載用基板と、 (9) and the optical element mounting substrate manufactured by the method according to the above (7) an optical semiconductor element mounting substrate or the (8) according to,
上記光半導体素子搭載用基板の凹部底面に搭載される光半導体素子と、 An optical semiconductor element mounted in the recess bottom surface of the optical element mounting substrate,
上記光半導体素子を覆うように上記凹部内に形成される蛍光体含有透明封止樹脂層と、 A phosphor-containing transparent encapsulant resin layer formed on the inner concave portion so as to cover the optical semiconductor element,
を備える光半導体装置。 Optical semiconductor device comprising a.

本発明によれば、成型性に優れ、硬化物の光反射率特性が劣化し難い熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板とその製造方法および光半導体装置を提供することができる。 According to the present invention, excellent moldability, cured product of the light reflectance properties deteriorate hard thermosetting light-reflecting resin composition, an optical semiconductor element mounting board and its manufacturing method and an optical semiconductor device using the same it is possible to provide a.

以下、本発明の実施の形態を説明する。 Hereinafter, an embodiment of the present invention.

本発明で用いる(A)エポキシ樹脂としては、電子部品用途として使用されている公知のエポキシ樹脂を用いることができ、特に限定されないが、例えば、フェノールノボラック型エポキシ樹脂、オルソクレゾールノボラック型エポキシ樹脂をはじめとするフェノール類とアルデヒド類のノボラック樹脂をエポキシ化したもの、ビスフェノールA、ビスフェノールF、ビスフェノールS、アルキル置換ビスフェノール等のジグリシジルエーテル、ジアミノジフェニルメタン、イソシアヌル酸等のポリアミンとエピクロルヒドリンの反応により得られるグリシジルアミン型エポキシ樹脂、オレフィン結合を過酢酸等の過酸で酸化して得られる線状脂肪族エポキシ樹脂、及び脂環族エポキシ樹脂等があり、これらを適宜何種類でも併用することが The (A) used in the present invention an epoxy resin, it can be used known epoxy resin that is used as an electronic component applications, but are not limited to, for example, phenol novolak type epoxy resin, ortho-cresol novolak type epoxy resin Introduction to that epoxidized novolak resins of phenols and aldehydes which are obtained bisphenol a, bisphenol F, bisphenol S, diglycidyl ethers such as an alkyl-substituted bisphenol, diaminodiphenylmethane, by reaction of a polyamine with epichlorohydrin, such as isocyanuric acid glycidyl amine type epoxy resin, oxidized to the resulting linear aliphatic epoxy resins with a peracid such as peracetic acid olefinic bonds, and there are alicyclic epoxy resins and the like, it may be used in combination even these at an appropriate number of different きる。 Kill. また、これらのうち比較的着色のないものが好ましく、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、ジグリシジルイソシアヌレート、トリグリシジルイソシアヌレートを挙げることができる。 Further, preferably has no relatively coloration of these, for example, can be exemplified bisphenol A-type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resins, diglycidyl isocyanurate, triglycidyl isocyanurate.

本発明で用いる(B)硬化剤は、シクロヘキサントリカルボン酸無水物を少なくとも含むものであればよく、特に制限はない。 (B) used in the present invention the curing agent is not limited as long as at least a cyclohexane tricarboxylic acid anhydride is not particularly limited.

上記シクロヘキサントリカルボン酸としては下記構造式(I) Following structural formula The above-cyclohexane tricarboxylic acid (I)
で表されるものが好ましい。 In those represented by it is preferred.

また、(B)硬化剤中に含まれうる、シクロヘキサントリカルボン酸無水物以外の硬化剤としては、エポキシ樹脂と反応するものであれば特に制限は無いが、無色または着色の少ないものが好ましく、例えば、酸無水物硬化剤、イソシアヌル酸誘導体、フェノール系硬化剤等が挙げられる。 Also, (B) may be included in the curing agent, the curing agent other than cyclohexane tricarboxylic acid anhydride is not particularly limited as long as it reacts with the epoxy resin, with less colorless or colored are preferred, e.g. , acid anhydride curing agents, isocyanuric acid derivative, phenolic curing agents and the like.

上記酸無水物系硬化剤としては、例えば、無水フタル酸、無水マレイン酸、無水トリメリット酸、無水ピロメリット酸、ヘキサヒドロ無水フタル酸、テトラヒドロ無水フタル酸、無水メチルナジック酸、無水ナジック酸、無水グルタル酸、無水ジメチルグルタル酸、無水ジエチルグルタル酸、無水コハク酸、メチルヘキサヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸等が挙げられ、上記イソシアヌル酸誘導体としては、1,3,5−トリス(1−カルボキシメチル)イソシアヌレート、1,3,5−トリス(2−カルボキシエチル)イソシアヌレート、1,3,5−トリス(3−カルボキシプロピル)イソシアヌレート、1,3−ビス(2−カルボキシエチル)イソシアヌレートなどが挙げられ、これらは単独で用いても、二種以 The acid anhydride curing agent include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methyl nadic anhydride, nadic anhydride, glutaric anhydride, dimethyl glutaric acid, diethyl glutaric acid anhydride, succinic anhydride, methylhexahydrophthalic anhydride, include such as methyl tetrahydrophthalic anhydride, examples of the isocyanuric acid derivatives, 1,3,5-tris (1 - carboxymethyl) isocyanurate, 1,3,5-tris (2-carboxyethyl) isocyanurate, 1,3,5-tris (3-carboxypropyl) isocyanurate, 1,3-bis (2-carboxyethyl) isocyanurate and the like, these may be used alone, or two or more than 併用しても良い。 It may be used in combination. これら併用しうる硬化剤の中では、成形時の流動性及び成形物の着色の観点から、無水フタル酸、無水トリメリット酸、ヘキサヒドロ無水フタル酸、テトラヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸、無水グルタル酸、無水ジメチルグルタル酸、無水ジエチルグルタル酸、1,3,5−トリス(3−カルボキシプロピル)イソシアヌレートを用いることが好ましい。 These combination in the curing agent may, from the viewpoint of coloring fluidity and molding at the time of molding, phthalic anhydride, trimellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methyl tetrahydrophthalic anhydride, glutaric anhydride, dimethyl glutaric acid, diethyl glutaric acid anhydride, the use of 1,3,5-tris (3-carboxypropyl) isocyanurate preferred.

また、(B)硬化剤中におけるシクロヘキサントリカルボン酸無水物の含有率は、本発明の目的が達成される範囲であれば特に制限はないが、5質量%以上100質量%以下の範囲が好ましく、コストと性能のバランスの観点からは25質量%以上75質量%以下の範囲であることがより好ましい。 Also, (B) content of cyclohexane tricarboxylic acid anhydride in the curing agent is not particularly limited as long as the object can be achieved according to the invention is preferably in the range of 5 mass% or more and 100 mass% or less, it is more preferable from the viewpoint of the balance between cost and performance in a range of more than 75 wt% to 25 wt%.

(A)エポキシ樹脂と(B)硬化剤の配合比は、エポキシ樹脂中のエポキシ基1当量に対して、硬化剤におけるエポキシ基との反応可能な活性基(酸無水物基、カルボキシル基又は水酸基)が0.5〜1.5当量、さらには、0.7〜1.2当量となるような割合であることが好ましい。 The mixing ratio of (A) and the epoxy resin (B) curing agent, the epoxy group 1 equivalent of the epoxy resin, capable of reacting active groups (acid anhydride groups with the epoxy groups in the curing agent, a carboxyl group or a hydroxyl group ) is 0.5 to 1.5 equivalents, and more preferably a proportion of about 0.7 to 1.2 equivalents. 活性基が0.5当量未満の場合には、エポキシ樹脂組成物の硬化速度が遅くなるとともに、得られる硬化体のガラス転移温度が低くなる場合があり、一方、1.5当量を超えると、耐湿性が低下する場合がある。 If the active group is less than 0.5 equivalent, with cure rate of the epoxy resin composition becomes slow, there is a case where the glass transition temperature of the cured product obtained becomes low, while when it exceeds 1.5 equivalents, in some cases the moisture resistance is lowered.

本発明で用いる(C)無機充填材としては、特に限定されないが、例えば、シリカ、アルミナ、酸化マグネシウム、酸化アンチモン、酸化チタン、酸化ジルコニウム、水酸化アルミニウム、水酸化マグネシウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウムからなる群の中から選ばれる少なくとも1種以上を用いることができるが、熱伝導性、光反射特性、成形性、難燃性の点からシリカ、アルミナ、酸化マグネシウム、酸化アンチモン、酸化チタン、酸化ジルコニウム、水酸化アルミニウム、水酸化マグネシウムのうちの2種以上の混合物が好ましい。 The inorganic filler (C) used in the present invention is not particularly limited, for example, silica, alumina, magnesium oxide, antimony oxide, titanium oxide, zirconium oxide, aluminum hydroxide, magnesium hydroxide, barium sulfate, magnesium carbonate, Although it is possible to use at least one or more selected from the group consisting of barium carbonate, thermal conductivity, light reflection properties, moldability, silica from the viewpoint of flame retardancy, alumina, magnesium oxide, antimony oxide, titanium oxide , zirconium oxide, aluminum hydroxide, a mixture of two or more of magnesium hydroxide are preferred. また、(C)無機充填材の平均粒径は、特に制限はないが、(D)白色顔料とのパッキングが効率よくなるように1〜100μmの範囲のものを用いることが好ましい。 The average particle size of the inorganic filler (C) is not particularly limited, it is preferable to use the range of 1~100μm as better efficiency packing of the (D) white pigment.

本発明で用いる(D)白色顔料としては、特に限定されないが、例えば、アルミナ、酸化マグネシウム、酸化アンチモン、酸化チタン、酸化ジルコニウム、無機中空粒子等を用いることができる。 The (D) white pigment used in the present invention is not particularly limited, for example, can be used alumina, magnesium oxide, antimony oxide, titanium oxide, zirconium oxide, inorganic hollow particles, and the like. 無機中空粒子としては、例えば、珪酸ソーダガラス、アルミ珪酸ガラス、硼珪酸ソーダガラス、シラス等が挙げられる。 The inorganic hollow particles, for example, sodium silicate glass, aluminum silicate glass, borosilicate soda glass, shirasu, and the like. また、(D)白色顔料の平均粒径は、1〜50μmの範囲にあることが好ましい。 The average particle diameter of the (D) white pigment is preferably in the range of 1 to 50 [mu] m. (D)白色顔料の平均粒径が1μm未満であると粒子が凝集しやすく分散性が悪くなる傾向にあり、50μmを超えると反射特性が十分に得られなくなる傾向にある。 Located average particle diameter of poor particles agglomerate easily dispersible is less than 1μm trend (D) white pigment, there is a tendency that the reflection characteristic exceeds 50μm can not be sufficiently obtained. なお、上記(D)白色顔料として、アルミナ等の上記(C)無機充填材として使用可能な成分と同一成分を同時に選択することも可能である。 As the (D) white pigment, it is possible to simultaneously select the (C) can be used as the inorganic filler component and the same component such as alumina.

上記(C)無機充填材と上記(D)白色顔料の合計配合量は、樹脂組成物全体に対して、10体積%〜85体積%の範囲であることが好ましい。 The inorganic filler (C) and (D) above the total amount of the white pigment, relative to the whole resin composition is preferably in the range of 10 vol% to 85 vol%. この配合量が、10体積%未満であると硬化物の光反射特性が不十分になる恐れがあり、85体積%を超えると樹脂組成物の成型性が悪くなり、光半導体素子搭載用基板の作製が困難となる。 This amount is, there is a possibility that the light reflectance properties of the cured product is less than 10% by volume is insufficient, the excess of 85% by volume resin composition moldability is deteriorated, the optical element mounting substrate Preparation is difficult.

本発明で用いる(E)カップリング剤としては、特に限定されないが、例えば、シラン系カップリング剤やチタネート系カップリング剤等を用いることができ、シランカップリング剤としては、例えば、エポキシシラン系、アミノシラン系、カチオニックシラン系、ビニルシラン系、アクリルシラン系、メルカプトシラン系、およびこれらの複合系等を用いることができる。 The (E) a coupling agent used in the present invention is not particularly limited, for example, it can be used a silane coupling agent or a titanate coupling agent, the silane coupling agent, for example, epoxysilane , aminosilane, cationic silane, vinylsilane, acrylic silane, mercapto silane, and these can be used a composite system, and the like. カップリング剤の種類や処理条件は特に限定しないが、カップリング剤の配合量は、保存安定性の観点から、樹脂組成物全体に対して、5重量%以下であることが好ましい。 The type and processing conditions of the coupling agent is not particularly limited, the amount of coupling agent, from the viewpoint of storage stability, it is preferable for the entire resin composition is 5 wt% or less.

また、本発明の樹脂組成物には、硬化時間の制御及び硬化性の向上の観点から硬化促進剤を配合してもよい。 Further, the resin composition of the present invention may contain a curing accelerator from the viewpoint of control and improvement of curability curing time. 硬化促進剤としては、特に限定されるものではないが、例えば、1,8−ジアザ−ビシクロ(5,4,0)ウンデセン−7、トリエチレンジアミン、トリ−2,4,6−ジメチルアミノメチルフェノール等の3級アミン類、2−エチル−4メチルイミダゾール、2−メチルイミダゾール等のイミダゾール類、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレート、テトラ−n−ブチルホスホニウム−o,o−ジエチルホスホロジチオエート、テトラ−n−ブチルホスホニウム−テトラフルオロボレート、テトラ−n−ブチルホスホニウム−テトラフェニルボレート等のリン化合物、4級アンモニウム塩、有機金属塩類及びこれらの誘導体などが挙げられる。 The curing accelerator is not particularly limited, for example, 1,8-diaza - bicyclo (5,4,0) undecene-7, triethylenediamine, tri-2,4,6-dimethylaminomethyl phenol tertiary amines like, 2-ethyl-4-methylimidazole, imidazoles such as 2-methyl imidazole, triphenyl phosphine, tetraphenylphosphonium tetraphenylborate, tetra -n- butyl phosphonium -o, o-diethyl phosphorodithioate benzoate, tetra -n- butyl phosphonium - tetrafluoroborate, tetra -n- butyl phosphonium - phosphorus compounds such as tetraphenyl borate, quaternary ammonium salts, and organic metal salts and derivatives thereof. これらは単独で使用してもよく又は、併用してもよい。 These may be used alone or may be used in combination. これらの硬化促進剤の中では、硬化性、着色性及び保存安定性のバランスの観点から、3級アミン類、イミダゾール類、リン化合物を用いることが好ましい。 Among these curing accelerators, curing, from the viewpoint of the balance between the coloring property and storage stability, tertiary amines, imidazoles, it is preferable to use a phosphorus compound. また、硬化促進剤の含有率は、本発明が達成される範囲であれば特に制限は無いが、(A)エポキシ樹脂に対して、0.01〜8.0重量%であることが好ましく、0.1〜3.0重量%であることがより好ましい。 The content of the curing accelerator is not particularly limited as long as the present invention is achieved, with respect to (A) an epoxy resin, is preferably 0.01 to 8.0 wt%, and more preferably 0.1 to 3.0 percent by weight. 硬化促進剤の含有率が、0.01重量%未満では、十分な硬化促進効果を得られない場合があり、また8.0重量%を超えると、得られる着色体に変色が見られる場合がある。 The content of the curing accelerator is less than 0.01% by weight, may not provide sufficient curing acceleration effect, and when it exceeds 8.0 wt%, may discolor the colored material obtained is observed is there.

本発明においては上記の他に、必要に応じて、添加剤として、酸化防止剤、離型剤、イオン捕捉剤等を添加してもよい。 In addition to the above in the present invention, if necessary, as additives, antioxidants, mold release agents, it may be added to the ion scavenger or the like.

本発明の熱硬化性光反射用樹脂組成物は、上記した各種成分を均一に分散混合することで得ることができ、その手段や条件等は特に限定されないが、一般的な手法として、所定配合量の成分をミキサー等によって十分均一に撹拌、混合した後、ミキシングロール、押出機、ニーダー、ロール、エクストルーダー等によって混練し、さらに、冷却、粉砕する方法を挙げることができる。 The thermosetting light-reflecting resin composition of the present invention can be obtained by uniformly dispersing and mixing the various components described above, the means and conditions are not particularly limited, as a general approach, given formulation stirred sufficiently uniform amounts of the components by a mixer or the like, after mixing, mixing roll, extruder, kneading kneader, a roll, by an extruder or the like, can be cited cooling, a method of pulverizing.

また、本発明の熱硬化性光反射用樹脂組成物は、熱硬化前、室温(0〜35℃)において加圧成型可能であり、熱硬化後の、波長350nm〜800nmにおける光反射率が90%以上であることが望ましい。 The thermosetting light-reflecting resin composition of the present invention, prior to heat curing is possible compression molding at room temperature (0 to 35 ° C.), after thermal curing, light reflectance at a wavelength 350nm~800nm ​​90 % desirably or more. 上記加圧成型は、例えば、室温において、0.5〜2MPa、1〜5秒程度の条件下で行うことができればよい。 The compression molding, for example, at room temperature, 0.5 to 2 MPa, it is sufficient be performed under conditions of about 1 to 5 seconds. また、上記光反射率が90%未満であると、光半導体装置の輝度向上に十分寄与できない傾向がある。 Further, when the reflectance is less than 90%, it tends not to be sufficiently contribute to brightness improvement of the optical semiconductor device.

本発明の光半導体素子搭載用基板は、光半導体素子搭載領域となる凹部(開口部)が1つ以上形成されており、少なくとも上記凹部の内周側面が本発明の熱硬化性光反射用樹脂組成物からなることを特徴とするものである。 The optical semiconductor element mounting substrate of the present invention, an optical semiconductor device comprising a mounting area recess (opening) is formed of one or more inner peripheral side surface of at least the recess thermosetting light-reflecting resin of the present invention and it is characterized in that comprising the composition. 図1には、光半導体素子搭載領域(凹部)200の側壁が本発明の熱硬化性光反射用樹脂組成物からなり、当該凹部底面を形成するように上記樹脂組成物を挟んで対向配置された一対の正負の金属配線105の露出表面がNi/Agめっき104により覆われてなる本発明の光半導体素子搭載用基板110の一実施形態を示す。 1 shows a side wall of the optical semiconductor element mounting region (recess) 200 is composed of a thermosetting light-reflecting resin composition of the present invention, it is opposed by sandwiching the resin composition so as to form the bottom surface of the recess exposed surfaces of the pair of positive and negative metal wiring 105 illustrates an embodiment of a photosemiconductor element mounting board 110 of the present invention covered composed by Ni / Ag plating 104.

本発明の光半導体素子搭載用基板の製造方法は、特に限定されないが、例えば、本発明の熱硬化性光反射用樹脂組成物をトランスファー成型により成型し、製造することが好ましい。 Method for manufacturing an optical semiconductor element mounting substrate of the present invention is not particularly limited, for example, a thermosetting light-reflecting resin composition of the present invention is molded by transfer molding, it is preferable to produce. より具体的には、例えば、図2(a)に示すように、金属箔から打ち抜きやエッチング等の公知の方法により金属配線105を形成し、ついで、該金属配線105を所定形状の金型301に配置し(図2(b))、金型301の樹脂注入口300から本発明の熱硬化性光反射用樹脂組成物を注入し、これを好ましくは金型温度170〜190℃で60〜120秒、アフターキュア温度120℃〜180℃で1〜3時間の条件にて熱硬化させた後、金型301を外し、硬化した熱硬化性光反射用樹脂組成物からなるリフレクター103に周囲を囲まれてなる光半導体素子搭載領域(凹部)200の所定位置に、電気めっきによりNi/銀めっき104を施すことで製造することができる(図2(c))。 More specifically, for example, as shown in FIG. 2 (a), by a known method such as punching or etching a metal foil to form a metal wiring 105, then, the mold having a predetermined shape said metal wires 105 301 disposed (FIG. 2 (b)), a thermosetting light-reflecting resin composition of the present invention from the resin injection port 300 of the mold 301 is injected, 60 which preferably mold temperature 170 to 190 ° C. 120 seconds, after thermal curing under conditions of 1 to 3 hours at after-cure temperature of 120 ° C. to 180 ° C., the mold 301 was removed and the surrounding reflector 103 made of cured thermoset light reflecting resin composition a predetermined position of the optical semiconductor element mounting region (recess) 200 surrounded by comprising, can be produced by subjecting a Ni / silver plating 104 by electroplating (Fig. 2 (c)).

また、本発明の光半導体素子搭載用基板を用いた光半導体装置は、例えば、本発明の光半導体素子搭載用基板と、光半導体素子搭載用基板の凹部底面に搭載される光半導体素子と、光半導体素子を覆うように凹部内に形成される蛍光体含有透明封止樹脂層と、を少なくとも備える。 Further, the optical semiconductor device using the optical semiconductor element mounting substrate of the present invention, for example, an optical semiconductor element mounting substrate of the present invention, an optical semiconductor element mounted in the recess bottom surface of the optical element mounting substrate, comprising a phosphor-containing transparent encapsulant resin layer that is formed in the recess so as to cover the optical semiconductor element, at least. 図3には、本発明の光半導体素子搭載用基板110の光半導体素子搭載領域(凹部)200の底部所定位置に光半導体素子100が搭載され、該光半導体素子100と金属配線105とがボンディングワイヤ102やはんだバンプ107などの公知の方法により電気的に接続され、該光半導体素子100が公知の蛍光体106を含む透明封止樹脂101により覆われている、本発明の光半導体装置の一実施形態を示す。 In FIG. 3, the optical semiconductor element 100 is mounted on the bottom position of the optical semiconductor element mounting region (recess) 200 of the photosemiconductor element mounting board 110 of the present invention, the optical semiconductor element 100 and the metal wire 105 is bonded wire 102 and by a known method such as solder bumps 107 are electrically connected, the optical semiconductor element 100 is covered by a transparent sealing resin 101 containing a known fluorescent substance 106, one optical semiconductor device of the present invention It shows an embodiment.

以下、本発明を実施例により詳述するが、本発明はこれらの実施例に制限するものではない。 Hereinafter will be described the invention based on examples, the present invention is not intended to be limited to these Examples.

(実施例1〜5及び比較例1〜3) (Examples 1 to 5 and Comparative Examples 1 to 3)
<熱硬化性光反射用樹脂組成物の作製> <Preparation of thermosetting light-reflecting resin composition>
下記表1に示す組成の材料を質量部で配合し、ミキサーによって十分混合した後、ミキシングロールにより溶融混練した後、室温まで冷却し、粉砕して、実施例1〜5および比較例1〜2の熱硬化性光反射用樹脂組成物を作製した。 The material of the composition shown in Table 1 were blended in parts by weight, were thoroughly mixed by a mixer, was melt-kneaded by a mixing roll, then cooled to room temperature, and pulverized, Examples 1-5 and Comparative Examples 1-2 the thermosetting light-reflecting resin composition was prepared.

なお、表1中の空欄は配合なしを示す。 Note that blank in Table 1 indicates no compounding. また、表1において、(A)エポキシ樹脂はトリグリシジルイソシアヌレート(日産化学工業株式会社製、商品名TEPIC−S、エポキシ当量100)であり、(B)硬化剤1はシクロヘキサントリカルボン酸無水物(三菱ガス化学株式会社製、商品名H−TMAn、エポキシ基と反応可能な活性基当量66)であり、(B)硬化剤2はヘキサヒドロ無水フタル酸(新日本理化株式会社製、リカシッドHH、エポキシ基と反応可能な活性基当量154)であり、(C)無機充填材は平均粒径20μmの溶融シリカ(電気化学工業株式会社製、商品名FB−950)であり、(D)白色顔料1は平均粒径27μmのほう珪酸ガラス(住友スリーエム株式会社製、商品名S60HS、)、白色顔料2は、平均粒径1μmのアルミナ(株式会社アド In Table 1, (A) epoxy resin is triglycidyl isocyanurate is (Nissan Chemical Industries, Ltd., trade name TEPIC-S, epoxy equivalent 100), (B) a curing agent 1 cyclohexane tricarboxylic acid anhydride ( manufactured by Mitsubishi Gas Chemical Company, Inc., trade name H-TMAn, a reactive active group and an epoxy group equivalent 66), (B) a curing agent 2 is hexahydrophthalic anhydride (New Japan Chemical Co., Ltd., RIKACID HH, epoxy a and group capable of reacting active group equivalent 154), a (C) inorganic filler has an average particle size 20μm of fused silica (Denki Kagaku Kogyo Co., Ltd., trade name FB-950), (D) a white pigment 1 silicate glass towards the average particle size of 27 [mu] m (manufactured by Sumitomo 3M Limited, trade name S60HS,), white pigment 2 has an average particle size 1μm alumina (manufactured ad ッテクス製、商品名AO−802)であり、(E)カップリング剤はγ−グリシドキシプロピルトリメトキシシラン(信越化学工業株式会社製、商品名KBM−403)であり、硬化促進剤はテトラ−n−ブチルホスホニウム−o,o−ジエチルホスホロジチオエート(日本化学工業株式会社製、商品名ヒシリコーンPX−4ET)であり、ユニトックス420(東洋ペトロライト株式会社製商品名、アルキルポリエーテル)は離型剤である。 Ttekusu made a trade name AO-802), (E) a coupling agent γ- glycidoxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., a trade name KBM-403), the curing accelerator tetra -n- butyl phosphonium -o, o-diethyl phosphorodithioate (manufactured by Nippon Chemical Industrial Co., Ltd., trade name arsenide silicone PX-4ET) is, Yunitokkusu 420 (Toyo Petrolite Co., Ltd. trade name, alkyl polyether) it is a mold release agent.

<タブレット作製> <Tablet produced>
実施例1〜5及び比較例1〜2の光反射樹脂組成物について、室温(25℃)でタブレット成型できるものを○、タブレット成型できないものを×として評価した。 The light reflecting resin compositions of Examples 1-5 and Comparative Examples 1-2 were evaluated ○ what can tabletting at room temperature (25 ° C.), those which can not tabletting as ×. なお、タブレットの成型は、MTV−I−37((株)丸七鉄工所製、商品名)を用い、0.7MPa、2秒の条件で行った。 In addition, the molding of the tablet, MTV-I-37 ((Ltd.) round seven Iron Works, Ltd., trade name) was used, 0.7MPa, was carried out in two seconds conditions.

<光反射性試験> <Light-reflective test>
実施例1〜5及び比較例1〜2の光反射樹脂組成物を、金型温度180℃、成形圧力6.9MPa、硬化時間90秒の条件でトランスファー成型した後、150℃で2時間熱処理して後硬化することにより、厚み1.0mmのテストピースを作製した。 A light reflecting resin compositions of Examples 1-5 and Comparative Examples 1-2, a mold temperature of 180 ° C., molding pressure 6.9 MPa, after transfer molding under the conditions of curing time 90 seconds, and heat-treated for 2 hours at 0.99 ° C. by post-cured Te, to prepare a test piece having a thickness of 1.0 mm. ついで、各テストピースの、波長350〜800nmにおける光反射率を積分球型分光光度計V−750型(日本分光株式会社製)にて測定した。 Then, each test piece was measured light reflectance at a wavelength of 350~800nm ​​at integrating sphere spectrophotometer V-750 type (manufactured by JASCO Corporation). また、150℃、72時間熱処理後の各テストピースの光反射率も測定した。 Further, 0.99 ° C., was also measured light reflectance of each test piece after 72 hours heat treatment. 測定値の評価基準は下記のとおりである。 Evaluation criteria for measurement are as follows. 結果を下記表1に示す。 The results are shown in Table 1 below.

(光反射率の評価基準) (Evaluation Criteria of light reflectance)
○:光反射率90%以上 △:光反射率70%以上、90%未満 ×:光反射率70%未満<バリ評価方法> ○: light reflectance of 90% or more △: light reflectance of 70% or more and less than 90% ×: light reflectance less than 70% <burrs Evaluation Method>
実施例1〜5及び比較例1、2の光反射樹脂組成物を、ポットより、幅がそれぞれ75,50,30,20,10,2μmのスリットを設けた金型に流し込み、上記光反射性試験のテストピースと同様にして成形した後、各スリット内に流れ込んで硬化した樹脂組成物の長さ(バリ長さ)をノギスで測定した。 A light reflecting resin compositions of Examples 1 to 5 and Comparative Examples 1 and 2, from the pot, poured into a mold width is respectively provided a slit 75,50,30,20,10,2Myuemu, the light reflecting after forming in the same manner as the test pieces of the test, the length of the resin composition cured flows into each slit (burr length) was measured with calipers. 各スリットにおけるバリ長さが全て2mm未満の場合を良好(○)とし、2mm以上のバリがある場合をNG(×)として評価した。 Where burr length is all less than 2mm at each slit a good (○), was evaluated when there is 2mm or more burrs as NG (×). 結果を下記表1に示す。 The results are shown in Table 1 below.

<熱時硬度> <Heat during the hardness>
実施例1〜5及び比較例1、2の光反射樹脂組成物を、上記光反射性試験のテストピースと同様にして直径50mm×厚さ3mmの円板状に成形し、その後直ちにショアD型硬度計((株)上島製作所製HD−1120(タイプD))を用いてその硬度を測定した。 A light reflecting resin compositions of Examples 1 to 5 and Comparative Examples 1 and 2, was molded into a disk form having a diameter of 50 mm × a thickness of 3mm in the same manner as the test piece of the light reflecting test, immediately thereafter Shore D type to measure the hardness using a hardness meter ((Ltd.) Ueshima Seisakusho HD-1120 (type D)). 結果を下記表1に示す。 The results are shown in Table 1 below.

表1に示されるように、各実施例の樹脂組成物は、成型性に優れ、なおかつその硬化物の光反射率特性が劣化し難いことが明らかである。 As shown in Table 1, the resin composition of each example is excellent in moldability, it is clear that yet hardly deteriorated light reflectivity characteristics of the cured product. したがって、本発明の熱硬化性光反射用樹脂組成物を用いると、可視光から近紫外光領域において高い反射率を保持することが可能な光半導体素子搭載用基板を効率的に製造することができる。 Therefore, the use of thermosetting light-reflecting resin composition of the present invention, is possible to manufacture the optical semiconductor element mounting board capable of holding a high reflectance in the near-ultraviolet light from visible light efficiently it can.

本発明の光半導体素子搭載用基板の一実施形態を示す断面図と斜視図である。 It is a cross-sectional view and a perspective view showing an embodiment of an optical semiconductor element mounting substrate of the present invention. 本発明の光半導体素子搭載用基板を製造する工程の一実施形態を示す概略図である。 It is a schematic diagram showing one embodiment of a process for manufacturing an optical semiconductor element mounting substrate of the present invention. 本発明の光半導体装置の一実施形態を示す断面図である。 It is a cross-sectional view showing an embodiment of an optical semiconductor device of the present invention. 一般的なSMDタイプのLED(光半導体装置)を示す断面図である。 It is a sectional view showing a general SMD type LED (optical semiconductor device).

符号の説明 DESCRIPTION OF SYMBOLS

100・・・・・光半導体素子(LED素子) 100 ----- optical semiconductor element (LED element)
101・・・・・透明封止樹脂102・・・・・ボンディングワイヤ103・・・・・リフレクター(熱硬化性光反射用樹脂組成物) 101 ----- transparent sealing resin 102 ----- bonding wires 103 ----- reflector (thermosetting light-reflecting resin composition)
104・・・・・Ni/Agめっき105・・・・・金属配線106・・・・・蛍光体107・・・・・はんだバンプ110・・・・・光半導体素子搭載用基板200・・・・・光半導体素子搭載領域(凹部) 104 ----- Ni / Ag plating 105 ----- metal wiring 106 ----- phosphor 107 ----- solder bumps 110 ----- optical semiconductor element mounting board 200 ... · optical semiconductor element mounting region (recess)
300・・・・・樹脂注入口301・・・・・金型400・・・・・LED素子401・・・・・ボンディングワイヤ402・・・・・透明封止樹脂403・・・・・リフレクター404・・・・・リード405・・・・・蛍光体406・・・・・ダイボンド材 300 ----- resin injection port 301 ----- mold 400 ----- LED element 401 ----- bonding wires 402 ----- transparent sealing resin 403 ..... reflector 404 ..... read 405 ----- phosphor 406 ----- die-bonding material

Claims (9)

  1. (A)エポキシ樹脂、(B)硬化剤、(C)無機充填材、(D)白色顔料及び(E)カップリング剤を含む樹脂組成物において、前記(B)硬化剤としてシクロヘキサントリカルボン酸無水物を含み、 前記(B)硬化剤中におけるシクロヘキサントリカルボン酸無水物の含有率が5質量%以上100質量%以下であり、前記(C)無機充填材と前記(D)白色顔料とは同一の成分であっても異なる成分であってもよく、かつ硬化後の、波長800nm〜350nmにおける光反射率が90%以上であり、硬化前には室温(0〜35℃)において加圧成型が可能であることを特徴とする熱硬化性光反射用樹脂組成物。 (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler, (D) in the white pigment and (E) a resin composition containing a coupling agent, wherein (B) cyclohexane tricarboxylic acid anhydride as a curing agent wherein the (B) the content of cyclohexane tricarboxylic acid anhydride in the curing agent is more than 5 mass% to 100 mass%, the (C) the inorganic filler (D) same component and a white pigment may be a also different components in, and after curing, and the light reflectance of 90% or more at a wavelength 800Nm~350nm, before curing can pressure molding at room temperature (0 to 35 ° C.) the thermosetting light-reflecting resin composition characterized in that there.
  2. 前記シクロヘキサントリカルボン酸無水物が下記構造式(I) The cyclohexane tricarboxylic acid anhydride following structural formula (I)

    で表されることを特徴とする請求項1記載の熱硬化性光反射用樹脂組成物。 Claim 1 The thermosetting light-reflecting resin composition, wherein in represented it.
  3. 前記(C)無機充填材が、シリカ、アルミナ、酸化マグネシウム、酸化アンチモン、酸化チタン、酸化ジルコニウム、水酸化アルミニウム、水酸化マグネシウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウムからなる群の中から選ばれる少なくとも1種以上であることを特徴とする請求項1または2記載の熱硬化性光反射用樹脂組成物。 Wherein the (C) inorganic filler, silica, alumina, magnesium oxide, antimony oxide, titanium oxide, zirconium oxide, aluminum hydroxide, magnesium hydroxide, at least selected from the group consisting of barium sulfate, magnesium carbonate, from barium carbonate claim 1 or 2 thermosetting light-reflecting resin composition, wherein the at least one.
  4. 前記(D)白色顔料が、アルミナ、酸化マグネシウム、酸化アンチモン、酸化チタン、酸化ジルコニウム、無機中空粒子からなる群の中から選ばれる少なくとも1種以上であることを特徴とする請求項1〜3のいずれか記載の熱硬化性光反射用樹脂組成物。 The (D) white pigment, alumina, magnesium oxide, antimony oxide, titanium oxide, zirconium oxide, according to claim 1, wherein the at least one selected from the group consisting of inorganic hollow particles the thermosetting light-reflecting resin composition according to any one of.
  5. 前記(D)白色顔料の平均粒径が、1〜50μmの範囲にあることを特徴とする請求項1〜4のいずれか記載の熱硬化性光反射用樹脂組成物。 Wherein (D) an average particle size of the white pigment, thermosetting light-reflecting resin composition according to any one of claims 1 to 4, characterized in that in the range of 1 to 50 [mu] m.
  6. 前記(C)無機充填材と前記(D)白色顔料の合計配合量が、樹脂組成物全体に対して、10体積%〜85体積%の範囲であることを特徴とする請求項1〜5のいずれか記載の熱硬化性光反射用樹脂組成物。 Wherein the (C) inorganic filler (D) the total amount of the white pigment with respect to the total resin composition, of claim 1, wherein in the range of 10 vol% to 85 vol% the thermosetting light-reflecting resin composition according to any one of.
  7. 光半導体素子搭載領域となる凹部が1つ以上形成されている光半導体素子搭載用基板であって、少なくとも前記凹部の内周側面が請求項1〜6のいずれかに記載の光反射用熱硬化性樹脂組成物からなることを特徴とする光半導体素子搭載用基板。 An optical semiconductor element mounting substrate recess to serve as the optical semiconductor element mounting region is formed of one or more light reflecting thermosetting according to the inner peripheral side surface of at least the recess claim 1 the optical semiconductor element mounting substrate, characterized by comprising a sexual resin composition.
  8. 光半導体素子搭載領域となる凹部が1つ以上形成されている光半導体素子搭載用基板の製造方法であって、少なくとも前記凹部を、請求項1〜6のいずれか1項記載の光反射用熱硬化性樹脂組成物を用いたトランスファー成型により形成することを特徴とする光半導体素子搭載用基板の製造方法。 A method for manufacturing an optical semiconductor element mounting substrate recess to serve as the optical semiconductor element mounting region is formed at least one, at least the concave portion, the heat for the reflection of light according to any one of claims 1 to 6 method for manufacturing an optical semiconductor element mounting substrate, which comprises forming by transfer molding using the curable resin composition.
  9. 請求項7に記載の光半導体素子搭載用基板または請求項8に記載の製造方法により製造された光半導体素子搭載用基板と、 An optical semiconductor element mounting substrate manufactured by the method according to the optical semiconductor element mounting substrate or claim 8 according to claim 7,
    前記光半導体素子搭載用基板の凹部底面に搭載される光半導体素子と、 An optical semiconductor element mounted on the recess bottom surface of the optical element mounting substrate,
    前記光半導体素子を覆うように前記凹部内に形成される蛍光体含有透明封止樹脂層と、 A phosphor-containing transparent encapsulant resin layer that the formed in the recess so as to cover the optical semiconductor element,
    を備える光半導体装置。 Optical semiconductor device comprising a.
JP2007176206A 2006-09-26 2007-07-04 The thermosetting light-reflecting resin composition, an optical semiconductor element mounting board and its manufacturing method and an optical semiconductor device using the same Active JP5298468B2 (en)

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