JP5665285B2 - Optical semiconductor element mounting member and optical semiconductor device - Google Patents

Optical semiconductor element mounting member and optical semiconductor device Download PDF

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JP5665285B2
JP5665285B2 JP2009142273A JP2009142273A JP5665285B2 JP 5665285 B2 JP5665285 B2 JP 5665285B2 JP 2009142273 A JP2009142273 A JP 2009142273A JP 2009142273 A JP2009142273 A JP 2009142273A JP 5665285 B2 JP5665285 B2 JP 5665285B2
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optical semiconductor
semiconductor element
light
resin composition
thermosetting resin
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JP2010287837A (en
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勇人 小谷
勇人 小谷
直之 浦崎
直之 浦崎
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日立化成株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Description

  The present invention relates to an optical semiconductor element mounting member and an optical semiconductor device.

  An optical semiconductor device combining an optical semiconductor element such as an LED (Light Emitting Diode) and a phosphor is high in energy efficiency and has a long life, so it is used for outdoor displays, portable liquid crystal backlights, and in-vehicle applications. The demand is expanding. As a result, the brightness of LED devices is increasing, and it is required to prevent an increase in junction temperature due to an increase in the amount of heat generated by the element and deterioration of the optical semiconductor device due to a direct increase in light energy.

  Patent Document 1 discloses a member for mounting an optical semiconductor element using a light-reflective thermosetting resin composition having a high reflectance in the visible light to near ultraviolet light region. Patent Document 2 discloses a molding resin composition that can be filled with titanium oxide and can maintain whiteness for a long time.

JP 2006-140207 A JP 2008-255338 A

  When a conventional optical semiconductor element mounting member using a thermosetting resin composition for light reflection is downsized, the thermosetting resin composition for light reflection is provided so as to surround the outer periphery of the optical semiconductor element. The wall surface made of the cured product or the bottom of the substrate filled with the cured product of the resin composition is made thinner. However, it is possible to mount a high-power element by a small optical semiconductor device, and as a result, leakage light that partially transmits light emitted from the optical semiconductor element is easily generated as the wall surface and the bottom are made thinner. When light leakage occurs, light to be emitted to the upper surface of the optical semiconductor device is lost, and the light extraction efficiency as the optical semiconductor device is reduced.

  The present invention has been made in view of the above circumstances, and an object thereof is to provide a member for mounting an optical semiconductor element in which light leakage is sufficiently reduced and an optical semiconductor device using the same.

  In order to solve the above-mentioned problems, the present invention provides an optical semiconductor element mounting member that has a recess for mounting a component, and at least a part of the recess is made of a molded body of a light-reflective thermosetting resin composition. An optical semiconductor element mounting member having a light reflectance of 90% or more at a wavelength of 460 nm of a test piece having a thickness of 0.1 mm obtained by pressure-molding and post-curing a thermosetting resin composition for light reflection. provide.

  The present invention also includes a substrate and a first connection terminal and a second connection terminal provided on the substrate, and the light reflecting heat is provided between the first connection terminal and the second connection terminal. It has a layer made of a cured product of a curable resin composition, and the cured product has a light reflectance of 90% or more at a wavelength of 460 nm of a test piece having a thickness of 0.1 mm obtained by pressure molding and post-curing. Provided is a member for mounting an optical semiconductor element, which is formed using a thermosetting resin composition for light reflection.

  According to such a member for mounting an optical semiconductor element, light leakage can be sufficiently reduced, so that an optical semiconductor device having excellent light shielding properties can be manufactured.

  The present invention provides an optical semiconductor device having the optical semiconductor element mounting member and an optical semiconductor element mounted on the optical semiconductor element mounting member.

  ADVANTAGE OF THE INVENTION According to this invention, the optical semiconductor element mounting member which reduced light leakage sufficiently, and an optical semiconductor device using the same can be provided.

It is a perspective view which shows one Embodiment of the member for optical semiconductor element mounting of this invention. It is the schematic which shows one Embodiment of the process of manufacturing the member for optical semiconductor element mounting of this invention. It is a perspective view which shows one Embodiment of the state which mounted the optical semiconductor element in the member for optical semiconductor element mounting of this invention. 1 is a schematic cross-sectional view showing an embodiment of an optical semiconductor device of the present invention. 1 is a schematic cross-sectional view showing an embodiment of an optical semiconductor device of the present invention. 1 is a schematic cross-sectional view showing an embodiment of an optical semiconductor device of the present invention. 1 is a schematic cross-sectional view showing an embodiment of an optical semiconductor device of the present invention. 1 is a schematic cross-sectional view showing an embodiment of an optical semiconductor device of the present invention. 1 is a schematic cross-sectional view showing a preferred embodiment of a copper-clad laminate according to the present invention. It is a schematic cross section which shows an example of the optical semiconductor device produced using the copper clad laminated board which concerns on this invention. It is a schematic cross section which shows other embodiment of the optical semiconductor device which concerns on this invention.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as necessary. In the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios. In addition, “(meth) acrylate” in the present specification means “acrylate” and “methacrylate” corresponding thereto.

[Optical semiconductor element mounting member]
The member for mounting an optical semiconductor element of the present invention has a recess for mounting a component, and at least a part of the recess is made of a molded body of a thermosetting resin composition for light reflection, and is thermosetting for light reflection. The light reflectance at a wavelength of 460 nm of a test piece having a thickness of 0.1 mm obtained by pressure-molding and post-curing the resin composition is 90% or more. Here, the light reflectance can be adjusted by selecting the components in the thermosetting resin composition for light reflection and optimizing the blending amount. Examples of the component mounted in the recess include an optical semiconductor element such as an LED. In the optical semiconductor element mounting member, the concave portion is constituted by a bottom surface and a wall surface, and the bottom surface of the concave portion is an optical semiconductor element mounting portion (optical semiconductor element mounting region), and at least one of the wall surface of the concave portion, that is, the inner peripheral side surface of the concave portion. It is preferable that the part is made of a molded body of a thermosetting resin composition for light reflection. FIG. 1 is a perspective view showing an embodiment of a member for mounting an optical semiconductor element of the present invention. The optical semiconductor element mounting member 110 includes a metal wiring 105 (first connection terminal and second connection terminal) on which Ni / Ag plating 104 is formed, and a metal wiring 105 (first connection terminal and second connection terminal). Insulating resin molded body 103 ′ provided between the terminals) and the reflector 103, the metal wiring 105 on which the Ni / Ag plating 104 is formed, and the recess 200 formed from the resin molded body 103 ′ and the reflector 103. have. The bottom surface of the recess 200 is composed of the metal wiring 105 on which the Ni / Ag plating 104 is formed and the insulating resin molded body 103 ′, and the wall surface of the recess 200 is composed of the reflector 103. And reflector 103 and insulating resin molding 103 'use the said thermosetting resin composition for light reflections.

  That is, the optical semiconductor element mounting member 110 has a concave portion 200 composed of a bottom surface and a wall surface, the bottom surface of the concave portion 200 is an optical semiconductor element mounting portion, and at least a part of the wall surface of the concave portion 200 is light reflective. An optical semiconductor element mounting member comprising a molded body 103 of a thermosetting resin composition for use, wherein at least a part of the molded body 103 has a thickness of 0.1 mm or less, and a molded body thickness of 0.1 mm. The light reflectance at a wavelength of 460 nm is preferably 90% or more.

  Although the manufacturing method of the optical semiconductor element mounting member of this invention is not specifically limited, For example, it can manufacture by transfer molding using the thermosetting resin composition for light reflections concerning this invention. FIG. 2 is a schematic view showing an embodiment of a process for producing a member for mounting an optical semiconductor element of the present invention. The optical semiconductor element mounting member is formed by, for example, forming a metal wiring 105 from a metal foil by a known method such as punching or etching, and performing Ni / Ag plating 104 by electroplating (FIG. 2A), A step of placing the metal wiring 105 in a mold 151 having a predetermined shape, injecting the thermosetting resin composition for light reflection according to the present invention from the resin injection port 150 of the mold 151, and performing transfer molding under a predetermined condition ( 2 (b)) and a step of removing the mold 151 (FIG. 2 (c)) can be produced. Thus, an optical semiconductor element mounting region (concave portion) 200 is formed on the optical semiconductor element mounting member. The optical semiconductor element mounting region (concave portion) 200 is surrounded by the reflector 103 made of a cured product of the light-reflective thermosetting resin composition. . The bottom surface of the recess is made of a metal wiring 105 serving as a first connection terminal and a metal wiring 105 serving as a second connection terminal, and a cured product of a light-reflective thermosetting resin composition provided therebetween. Insulating resin molded body 103 ′. The transfer molding is preferably performed at a mold temperature of 170 to 200 ° C., a molding pressure of 0.5 to 20 MPa for 60 to 120 seconds, and an after cure temperature of 120 to 180 ° C. for 1 to 3 hours.

(Wiring board)
Although it does not specifically limit as a wiring board which has the metal wiring 105, At least 1 sort (s) chosen from a lead frame, a printed wiring board, a flexible wiring board, and a metal base wiring board can be used.

  As the lead frame, a substrate made of copper, 42 alloy, or the like and a wiring circuit formed according to a known method can be used. The surface of the substrate should be plated with a material such as Ni / Au, Ni / Ag, Ni / Pb / flash Au and Ni / Pd so that light from the optical semiconductor element can be efficiently reflected. Is preferred.

  As a printed wiring board, a glass reinforced resin substrate provided with a copper foil for forming a wiring circuit is used, a wiring circuit is formed according to a known technique, and then an insulating resin is provided on the wiring circuit. be able to. The resin used for the glass-reinforced resin substrate and the insulating resin preferably have a reflective layer formed of a white insulating resin so that light from the optical semiconductor element can be efficiently reflected.

  As a flexible wiring board, a polyimide substrate provided with a copper foil for forming a wiring circuit is used, and after a wiring circuit is formed according to a known technique, an insulating resin is provided on the wiring circuit. . The insulating resin preferably has a reflective layer formed of a white insulating resin so that light from the LED element can be efficiently reflected.

  As the metal base wiring board, an insulating layer is formed on a metal substrate made of copper or aluminum, a circuit is formed according to a known method, and an insulating resin is further provided on the circuit. The insulating layer and the insulating resin are preferably formed with a reflective layer of a white insulating resin so that light from the optical semiconductor element can be efficiently reflected.

(Thermosetting resin composition for light reflection)
The thermosetting resin composition for light reflection according to the present invention contains a thermosetting resin containing an epoxy resin and an inorganic oxide having a refractive index of 1.6 to 3.0, and the compounding amount of the inorganic oxide is It is preferable that it is 70-400 mass parts with respect to 100 mass parts of thermosetting resins. Such a composition is easy to adjust the balance between the light reflectance of the molded product and other characteristics such as moldability and heat resistance.

<Inorganic oxide having a refractive index of 1.6 to 3.0>
The refractive index of the inorganic oxide is 1.6 to 3.0, preferably 1.8 to 3.0, and more preferably 2.0 to 3.0. Examples of the inorganic oxide having a refractive index in the range of 1.6 to 3.0 include titanium oxide having a refractive index of 2.5 to 2.7, zinc oxide having a refractive index of 1.9 to 2.0, and a refractive index of 1. Examples thereof include aluminum oxide having 6 to 1.8, magnesium oxide having a refractive index of 1.7, zirconium oxide having a refractive index of 2.4, aluminum hydroxide having a refractive index of 1.6, and magnesium hydroxide having a refractive index of 1.6. Among these, it is preferable to include titanium oxide having a higher refractive index as an inorganic oxide. By using an inorganic oxide having a refractive index larger than the refractive index of the thermosetting resin contained in the thermosetting resin composition for light reflection, the light reflectance of the cured product of the resin composition can be increased. It can be made high and can be appropriately selected in combination with a component constituting the thermosetting resin used. Here, the refractive index in this specification is a value measured with light having a wavelength of 540 nm.

The titanium oxide is surface-treated with a specific surface treatment agent based on fine particle titanium oxide whose content as titanium oxide (TiO 2 ) is adjusted to 80 to 97% by weight. Examples of the surface treatment agent for titanium oxide include metal oxides such as silica, alumina, and zirconia; and organic substances such as silane coupling agents, titanium coupling agents, organic acids, polyols, and silicones. Titanium oxide surface-treated with at least one selected from silica, alumina and zirconia, or at least one selected from silica, alumina, zirconia and organic substances is preferred. From the viewpoint of improving the adhesion with the thermosetting resin, the surface may be further organically treated using a silane coupling agent such as epoxysilane. As a crystal type of titanium oxide, there are a rutile type having a refractive index of 2.7, an anatase type having a refractive index of 2.5, and a brookite type having a refractive index of 2.6. The crystal type of titanium oxide is not particularly limited, but the rutile type is preferable from the viewpoint of refractive index and light absorption characteristics.

  Titanium oxide can be used by obtaining a commercial product. Examples of the rutile titanium oxide include trade names manufactured by Sakai Chemical Industry Co., Ltd .: D-918, FTR-700, trade names manufactured by Ishihara Sangyo Co., Ltd .: Taipei CR-50, CR-50-2, CR-60, CR- 60-2, CR-63, CR-80, CR-90, CR-90-2, CR-93, CR-95, CR-97, trade names manufactured by Teica: JR-403, JR-805, JR -806, JR-701, JR-800, trade names manufactured by Fuji Titanium Industry Co., Ltd .: TR-600, TR-700, TR-750, TR-840, TR-900. Here, titanium oxide is obtained by producing a natural product as a raw material by a known sulfuric acid method or hydrochloric acid method. Titanium oxide obtained from each of the sulfuric acid method and hydrochloric acid method has different refractive index, but the color of titanium oxide, that is, the reflection spectrum characteristics, is different due to the difference in the elements mixed from the treatment liquid during production. can get. Usually, titanium oxide obtained from the hydrochloric acid method has a high light reflectance at a wavelength of 460 to 800 nm, and titanium oxide obtained from a sulfuric acid method has a light reflectance at a wavelength of 460 to 800 nm inferior to the former. In particular, when the light-reflective thermosetting resin composition is used in the optical semiconductor device of the present invention, titanium oxide contained in the light-reflective thermosetting resin composition is a hydrochloric acid method having a high light reflectance at a wavelength of 460 to 800 nm. It is preferable to use what is manufactured.

  The central particle diameter of the inorganic oxide is preferably 0.1 to 20 μm, more preferably 0.1 to 10 μm, from the viewpoint of dispersibility in the light-reflective thermosetting resin composition. More preferably, it is 1-5 micrometers. By setting the center particle diameter of the inorganic oxide within the above range, it is possible to obtain a light-reflective thermosetting resin composition that gives a molded product having a high surface reflectance.

  The compounding amount of the inorganic oxide is preferably 70 to 400 parts by mass with respect to 100 parts by mass of the thermosetting resin, more preferably 90 parts by mass or more, and further preferably 130 parts by mass or more. 130 to 380 parts by mass is particularly preferable. Moreover, when using the thermosetting resin composition for light reflections for transfer molding, it is preferable that it is 70-400 mass parts with respect to 100 mass parts of thermosetting resins, and it uses it for board | substrate coating. In the case, it is preferably 130 to 400 parts by mass. The light reflectivity of the cured product of the resin composition can be adjusted by adjusting the blending amount of the inorganic oxide. If the blending amount of the inorganic oxide is less than 70 parts by mass, the light leakage property of the cured product formed from the thermosetting resin composition for light reflection tends to be insufficient, and if it exceeds 400 parts by mass, the light reflection is There exists a tendency for the moldability of the thermosetting resin composition for water to fall.

<Thermosetting resin>
(Epoxy resin)
As an epoxy resin, what is generally used with the epoxy resin molding material for electronic component sealing can be used. Epoxy resins include, for example, epoxidized phenol and aldehyde novolak resins such as phenol novolac type epoxy resin and orthocresol novolak type epoxy resin, diglycidyl such as bisphenol A, bisphenol F, bisphenol S and alkyl substituted bisphenol Glycidylamine type epoxy resin obtained by reaction of polyamine such as ether, diaminodiphenylmethane and isocyanuric acid with epichlorohydrin, linear aliphatic epoxy resin obtained by oxidizing olefin bond with peracid such as peracetic acid, and alicyclic An epoxy resin is mentioned. These can be used alone or in combination of two or more.

  Among these, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, diglycidyl isocyanurate, triglycidyl isocyanurate, and 1,2-cyclohexanedicarboxylic acid, 1,3-cyclohexanedicarboxylic acid or A dicarboxylic acid diglycidyl ester derived from 1,4-cyclohexanedicarboxylic acid is preferable because of relatively little coloring. For the same reason, diglycidyl esters of dicarboxylic acids such as phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, methyltetrahydrophthalic acid, nadic acid and methylnadic acid are also suitable. Examples thereof include glycidyl esters such as nuclear hydrogenated trimellitic acid and nuclear hydrogenated pyromellitic acid having an alicyclic structure in which an aromatic ring is hydrogenated. Polyorganosiloxane having an epoxy group produced by heating and hydrolyzing and condensing a silane compound in the presence of an organic solvent, an organic base and water is also included.

  A commercially available epoxy resin can also be used. For example, as 3,4-epoxycyclohexylmethyl-3 ′, 4′-epoxycyclohexanecarboxylate, Celoxide 2021, Celoxide 2021A, Celoxide 2021P (above, Daicel Chemical Industries, trade name), ERL 4221, ERL 4221D, ERL 4221E (above Available from Dow Chemical Japan Co., Ltd.). Further, as bis (3,4-epoxycyclohexylmethyl) adipate, ERL4299 (manufactured by Dow Chemical Japan, trade name) and EXA7015 (manufactured by Dainippon Ink & Chemicals, trade name) can be obtained. Further, as 1-epoxyethyl-3,4-epoxycyclohexane or limonene diepoxide, Epicoat YX8000, Epicoat YX8034, Epicoat YL7170 (above, trade name, manufactured by Japan Epoxy Resin Co., Ltd.), Celoxide 2081, Celoxide 3000, Epolide GT301, Epolide GTPIC, EHPE3150 (manufactured by Daicel Chemical Industries, Ltd.), and TEPIC (trade name, manufactured by Nissan Chemical Co., Ltd.) which is trisglycidyl isocyanurate are available.

(Curing agent)
The light reflecting thermosetting resin composition preferably contains a curing agent. As a hardening | curing agent, the hardening | curing agent generally used with the epoxy resin molding material for electronic component sealing can be used. Such a curing agent is not particularly limited as long as it reacts with an epoxy resin, but is preferably less colored, and more preferably colorless or light yellow.

  Examples of such a curing agent include an acid anhydride curing agent, an isocyanuric acid derivative curing agent, and a phenol curing agent. Examples of the acid anhydride curing agent include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methyl nadic anhydride, nadic anhydride, glutaric anhydride. Examples include acid, dimethyl glutaric anhydride, diethyl glutaric anhydride, succinic anhydride, methyl hexahydrophthalic anhydride, and methyl tetrahydrophthalic anhydride. Isocyanuric acid derivatives include 1,3,5-tris (1-carboxymethyl) isocyanurate, 1,3,5-tris (2-carboxyethyl) isocyanurate, 1,3,5-tris (3-carboxypropyl) ) Isocyanurate, 1,3-bis (2-carboxyethyl) isocyanurate. Among these curing agents, phthalic anhydride, trimellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, glutaric anhydride, dimethylglutaric anhydride, anhydrous It is preferable to use diethyl glutaric acid or 1,3,5-tris (3-carboxypropyl) isocyanurate. The above curing agents may be used alone or in combination of two or more.

  The above-mentioned curing agent preferably has a molecular weight of 100 to 400. In addition, acid anhydrides in which all unsaturated bonds of the aromatic ring are hydrogenated are preferable to acid anhydrides having an aromatic ring such as trimellitic anhydride and pyromellitic anhydride. As the acid anhydride curing agent, an acid anhydride generally known as a raw material for polyimide resin may be used.

  In the thermosetting resin composition for light reflection according to the present invention, the blending amount of the curing agent is preferably 1 to 150 parts by mass, and 50 to 120 parts by mass with respect to 100 parts by mass of the epoxy resin. Is more preferable.

  The curing agent has 0.5 to 0.9 equivalent of an active group (an acid anhydride group or a hydroxyl group) in the curing agent capable of reacting with the epoxy group with respect to 1 equivalent of the epoxy group in the epoxy resin. It is preferable to mix | blend so that it may become 0.7-0.8 equivalent. If the said active group is less than 0.5 equivalent, while the cure rate of a thermosetting resin composition will become slow, the glass transition temperature of the hardened | cured material obtained will become low, and there exists a tendency for sufficient elasticity modulus to become difficult to be obtained. On the other hand, when the active group exceeds 0.9 equivalent, the strength after curing tends to decrease.

(Curing accelerator)
The thermosetting resin composition for light reflection preferably contains a curing accelerator in order to accelerate the curing reaction. Examples of the curing accelerator include amine compounds, imidazole compounds, organic phosphorus compounds, alkali metal compounds, alkaline earth metal compounds, and quaternary ammonium salts. Among these curing accelerators, it is preferable to use an amine compound, an imidazole compound, or an organic phosphorus compound. Examples of the amine compound include 1,8-diaza-bicyclo (5,4,0) undecene-7, triethylenediamine, and tri-2,4,6-dimethylaminomethylphenol. Examples of the imidazole compound include 2-ethyl-4-methylimidazole. Furthermore, examples of the organic phosphorus compound include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetra-n-butylphosphonium-o, o-diethylphosphorodithioate, tetra-n-butylphosphonium-tetrafluoroborate, tetra -N-butylphosphonium-tetraphenylborate. These curing accelerators may be used alone or in combination of two or more.

  The blending amount of the curing accelerator is preferably 0.01 to 8 parts by mass and more preferably 0.1 to 3 parts by mass with respect to 100 parts by mass of the epoxy resin. When the blending amount of the curing accelerator is less than 0.01 parts by mass, a sufficient curing acceleration effect may not be obtained, and when it exceeds 8 parts by mass, discoloration may be seen in the obtained cured product.

  The refractive index of the thermosetting resin containing an epoxy resin and a curing agent and a curing accelerator blended as necessary is usually 1.3 to 1.6, and a refractive index of 1.4 to 1.5 is used. It is preferable.

<Hollow particles having a refractive index of voids of 1.0 to 1.1>
In the present embodiment, the thermosetting resin composition for light reflection contains hollow particles having a refractive index of 1.0 to 1.1 in the void together with an inorganic oxide having a refractive index of 1.6 to 3.0. can do. By containing the hollow particles, the light reflectance can be easily adjusted, and thereby a light-reflective thermosetting resin composition that can more effectively suppress light leakage can be obtained.

  The voids of the hollow particles may be in a vacuum or may be filled with a medium having a refractive index of 1.0 to 1.1. In the hollow particles, since the light transmitted through the outer shell of the hollow particles is reflected inside the hollow particles, the refractive index of the void is more preferably filled with a medium having a lower refractive index than that of the thermosetting resin. preferable. As such a medium, air is usually preferable, but it may be an inert gas such as nitrogen or argon, or a mixed gas thereof.

  The hollow particles are preferably formed of a material having high heat resistance and pressure strength because the hollow particles are destroyed in the heat treatment and the resin composition preparation step, and the light leakage characteristics deteriorate when the voids disappear. . As such a material, as an inorganic compound, a metal oxide such as inorganic glass, silica, and alumina, and a metal salt such as calcium carbonate, barium carbonate, calcium silicate, and nickel carbonate can be suitably used. , Sodium silicate glass, aluminum silicate glass, and sodium borosilicate glass. As the organic compound, a polystyrene resin, a poly (meth) acrylate resin, and a crosslinked product thereof can be suitably used. The outer shell of the hollow particles is preferably composed of at least one material selected from the group consisting of sodium silicate glass, aluminum silicate glass, sodium borosilicate glass, crosslinked styrene resin, and crosslinked acrylic resin.

  The center particle diameter of the hollow particles is preferably 0.1 to 50 μm, and more preferably 0.1 to 30 μm. If the center particle diameter of the hollow particles is less than 0.1 μm, the dispersion of the hollow particles may be non-uniform when preparing the thermosetting resin composition for light reflection, and if it exceeds 50 μm, the thickness of the cured product formed Tends to be thick and the reflectivity of the cured product tends to decrease.

  It is preferable that the compounding quantity of a hollow particle is 20-85 mass parts with respect to 100 mass parts of thermosetting resins. When the light-reflective thermosetting resin composition is used for transfer molding, it is more preferably 20 to 85 parts by mass with respect to 100 parts by mass of the thermosetting resin, and the substrate is used for substrate coating. Is more preferably 20 to 50 parts by mass.

(Measurement method of refractive index)
The refractive index according to the present embodiment indicates a value for light of d-line (587.562 nm, He) at a temperature of 25 ° C. The refractive index can be measured using various refractometers according to principles such as a critical angle method, a prism coupling method, a Becke method, and a v-block method. Examples of the measuring apparatus include a spectrometer, an Abbe refractometer, a Pullrich refractometer, and an ellipsometer. The method of measuring the refractive index can be selected according to the properties (solid, liquid, etc.) of the measurement object. When the measurement object is a solid, the refractive index measurement method can be selected depending on the shape of the thin film, bulk, or powder. For example, when the measurement object is a solid, the measurement object can be thinned by a known method and measured using an Abbe refractometer or an ellipsometer. As the refractive index of a white pigment such as an inorganic oxide, a measured value in the shape (bulk or thin film) of a component constituting the white pigment may be applied. When the white pigment is powder, the Becke method is used. In the present specification, the refractive index of the thermosetting resin is measured by the V block method (measurement apparatus: KPR, manufactured by Kalnew Optical), and the refractive index of the white pigment is measured by the Becke method (method compared with the standard solution). It is. In addition, about the hollow particle, since the void portion is filled with air or inert gas, the refractive index of the void portion is “1.0 to 1.1” corresponding to the refractive index of air or inert gas. Numerical values can be applied.

<Other ingredients>
From the viewpoint of improving moldability, the light-reflective thermosetting resin composition according to the present invention may further include an inorganic filler. Moreover, when adding these, a coupling agent can be added from a viewpoint of improving adhesiveness with a thermosetting resin component.

(Inorganic filler)
Examples of the inorganic filler include silica, barium sulfate, magnesium carbonate, and barium carbonate. From the viewpoint of moldability, the inorganic filler is preferably silica. Moreover, it is preferable that the center particle diameter of an inorganic filler is 1-100 micrometers from a viewpoint of improving packing property with a white pigment.

(Coupling agent)
Although it does not specifically limit as a coupling agent, For example, a silane coupling agent and a titanate coupling agent are mentioned. Examples of the silane coupling agent generally include epoxy silane, amino silane, cationic silane, vinyl silane, acryl silane, mercapto silane, and composites thereof, and can be used in any amount. In addition, it is preferable that the compounding quantity of a coupling agent is 5 mass% or less with respect to the whole thermosetting resin composition.

  Moreover, you may add additives, such as antioxidant, a mold release agent, and an ion capture agent, to the thermosetting resin composition for light reflections concerning this invention as needed.

[Method for producing thermosetting resin composition for light reflection]
The light-reflective thermosetting resin composition of the present embodiment can be obtained by uniformly dispersing and mixing the various components described above, and means and conditions thereof are not particularly limited. As a general method for producing a thermosetting resin composition for light reflection, a method of kneading each component with a kneader, a roll, an extruder, a raking machine, a planetary mixer that combines rotation and revolution, etc. Can do. When kneading each component, it is preferable to carry out in a molten state from the viewpoint of improving dispersibility.

  The kneading conditions may be appropriately determined depending on the type and blending amount of each component. For example, kneading is preferably performed at 15 to 100 ° C. for 5 to 40 minutes, and kneading at 20 to 100 ° C. for 10 to 30 minutes is more preferable. preferable. When the kneading temperature is less than 15 ° C., it becomes difficult to knead each component and the dispersibility tends to decrease. When the kneading temperature exceeds 100 ° C., the high molecular weight of the thermosetting resin proceeds, and thermosetting during kneading. The resin may be cured. Further, if the kneading time is less than 5 minutes, a sufficient dispersion effect may not be obtained. If the kneading time exceeds 40 minutes, the thermosetting resin may increase in molecular weight, and the thermosetting resin may be cured.

  The light reflecting thermosetting resin composition of the present embodiment preferably has a light reflectance of 90% or more at a wavelength of 460 to 800 nm after thermosetting. If the light reflectance is less than 90%, there is a tendency that it cannot sufficiently contribute to the improvement of the luminance of the optical semiconductor device.

  The light-reflective thermosetting resin composition of this embodiment includes a substrate material for mounting an optical semiconductor element that requires high light reflectivity and heat resistance, an electrical insulating material, an optical semiconductor sealing material, an adhesive material, a paint material, and It is useful in various applications such as an epoxy resin molding material for transfer molding. An example when used as an epoxy resin molding material for transfer molding will be described below.

  The thermosetting resin composition for light reflection according to the present embodiment has a Shore D hardness of 30 seconds or less immediately after molding, that is, when it is molded at a molding temperature of 180 ° C. and 90 seconds at the time of transfer molding. The hardness is preferably 80 to 95. When the hot hardness is less than 80, curing of the molded product is hindered, and when the molded product is released from the mold, the molded product may be broken or broken. When such a molded body breaks down, the yield of manufacturing the optical semiconductor element mounting member decreases, and the optical semiconductor device cannot be manufactured.

  The light-reflective thermosetting resin composition of the present embodiment has a burr length of 5 mm or less when transfer molded under conditions of a molding temperature of 180 ° C., a molding pressure of 6.9 MPa, and a molding time of 60 to 120 seconds. Is preferred. If the length of the burr exceeds 5 mm, when manufacturing the optical semiconductor element mounting member, resin contamination occurs in the opening (concave portion) that becomes the optical semiconductor element mounting region, In addition, there is a possibility that it becomes an obstacle when electrically connecting the optical semiconductor element and the metal wiring. From the viewpoint of workability at the time of manufacturing a semiconductor device, the burr length is more preferably 3 mm or less, and further preferably 1 mm or less.

[Optical semiconductor device]
An optical semiconductor device of the present invention includes the above-described optical semiconductor element mounting member, an optical semiconductor element provided in a recess of the optical semiconductor element mounting member, and a sealing resin that fills the recess and seals the optical semiconductor element Part.

  FIG. 3 is a perspective view showing an embodiment in which the optical semiconductor element 100 is mounted on the optical semiconductor element mounting member 110 of the present invention. As shown in FIG. 3, the optical semiconductor element 100 is mounted at a predetermined position in the optical semiconductor element mounting region (recessed portion) 200 of the optical semiconductor element mounting member 110 and is electrically connected by the metal wiring 105 and the bonding wire 102. The 4 and 5 are schematic cross-sectional views showing an embodiment of the optical semiconductor device of the present invention. As shown in FIGS. 4 and 5, the optical semiconductor device includes an optical semiconductor element mounting member 110, an optical semiconductor element 100 provided at a predetermined position in the concave portion 200 of the optical semiconductor element mounting member 110, and the concave portion 200. A sealing resin portion made of a transparent sealing resin 101 including a phosphor 106 that fills and seals the optical semiconductor element, and the optical semiconductor element 100 and the metal wiring 105 on which the Ni / Ag plating 104 is formed; Are electrically connected by bonding wires 102 or solder bumps 107.

  FIG. 6 is also a schematic cross-sectional view showing an embodiment of the optical semiconductor device of the present invention. In the optical semiconductor device shown in FIG. 6, the LED element 300 is disposed via a die bonding material 306 at a predetermined position on the lead 304 on which the reflector 303 is formed, and the LED element 300 and the lead 304 are electrically connected by the bonding wire 301. The LED element 300 is sealed with a transparent sealing resin 302 that is connected and includes a phosphor 305. The thinnest part of the reflector 303 is 0.1 mm or less.

  Moreover, in the optical semiconductor element mounting member according to another aspect of the present invention, without including the reflector 103, the substrate, and the first connection terminal and the second connection terminal provided on the substrate are provided. It has the layer which consists of hardened | cured material 103 'of the thermosetting resin composition for light reflections formed between the 1st connection terminal and the 2nd connection terminal.

  FIG. 7 is a schematic cross-sectional view showing an embodiment of the optical semiconductor device of the present invention. The optical semiconductor device shown in FIG. 7B is manufactured using the optical semiconductor element mounting member 120 shown in FIG. The optical semiconductor element mounting member 120 includes a metal wiring 105 plated with Ni / Ag 104 and a cured product 103 ′ made of a thermosetting resin composition for light reflection in an opening formed therefrom. Here, the thickness of the cured product 103 ′ is preferably 0.1 mm or less. As shown in FIG. 7B, the optical semiconductor element 100 is mounted at a predetermined position on the metal wiring 105 in the optical semiconductor element mounting member 120 and is electrically connected to the metal wiring 105 by the bonding wire 102.

  FIG. 8 is also a schematic cross-sectional view showing an embodiment of the optical semiconductor device of the present invention. The optical semiconductor device shown in FIG. 8B is manufactured using the optical semiconductor element mounting member 130 shown in FIG. The optical semiconductor element mounting member 130 is light-reflective thermosetting on a substrate 109 on which a first connection terminal (metal wiring 105) and a second connection terminal (metal wiring 105) are arranged at a predetermined distance. A cured product 103 ′ made of a conductive resin composition is laminated, and a cured product 103 ′ is provided between the first connection terminal (metal wiring 105) and the second connection terminal (metal wiring 105). Here, the thickness of the cured product 103 ′ is preferably 0.1 mm or less. As shown in FIG. 8B, the optical semiconductor element 100 is mounted at a predetermined position on the first connection terminal (metal wiring 105) of the optical semiconductor element mounting member 120, and the second connection is made by the bonding wire 102. It is electrically connected to the terminal (metal wiring 105).

  In the case of the semiconductor device shown in FIGS. 7B and 8B, after the optical semiconductor element 100 is mounted on the optical semiconductor element mounting member and electrically connected by the bonding wire 102, transfer molding or compression molding is performed. A step of hardening and molding the sealing resin portion made of the transparent sealing resin 101 including the phosphor 106 and sealing the optical semiconductor element 100, and then separating into pieces by dicing can be used.

  Also in the optical semiconductor device shown in FIGS. 7 and 8, the cured product 103 ′ of the light reflecting thermosetting resin composition has a light diffuse reflectance of 90% or more at a wavelength of 800 to 460 nm. By applying an object, light leakage can be suppressed even when the device is downsized.

  As mentioned above, although preferred embodiment of this invention was described, this invention is not restrict | limited to this. For example, the thermosetting resin composition for light reflection according to the present embodiment can be used as a light reflection coating agent. As this embodiment, a copper clad laminate, an optical semiconductor element mounting member, and an optical semiconductor element will be described.

  A copper clad laminate according to the present invention comprises a light reflecting resin layer formed using the above-described thermosetting resin composition for light reflection, and a copper foil laminated on the light reflecting resin layer. It is.

  FIG. 9 is a schematic cross-sectional view showing a preferred embodiment of a copper-clad laminate according to the present invention. As shown in FIG. 9, a copper clad laminate 400 includes a base material 401, a light reflecting resin layer 402 laminated on the base material 401, and a copper foil 403 laminated on the light reflecting resin layer 402. It is equipped with. Here, the light reflecting resin layer 402 is formed using the above-described thermosetting resin composition for light reflection.

  As the base material 401, a base material used for a copper-clad laminate can be used without particular limitation, and examples thereof include a resin laminate such as an epoxy resin laminate and an optical semiconductor mounting substrate.

  For example, the copper-clad laminate 400 is obtained by applying a light-reflective thermosetting resin composition to the surface of the base material 401, stacking a copper foil 403, and curing by heating and pressing to form a light-reflecting layer 402 made of the resin composition. It can be manufactured by forming.

  As a method for applying the resin composition to the substrate 401, for example, a coating method such as a printing method, a die coating method, a curtain coating method, a spray coating method, or a roll coating method can be used. At this time, the light-reflective thermosetting resin composition can contain a solvent so as to facilitate application. In addition, when using a solvent, about the thing based on the resin composition whole quantity by the mixture ratio of each component mentioned above, it is preferable to set what remove | excluded the solvent as a whole quantity.

  The heating and pressing conditions are not particularly limited. For example, it is preferable to perform heating and pressing under conditions of 130 to 180 ° C., 0.5 to 4 MPa, and 30 to 600 minutes.

  Using the copper-clad laminate according to the present invention, a printed wiring board for an optical member such as for LED mounting can be produced. Note that the copper clad laminate 400 shown in FIG. 9 is obtained by laminating the light reflecting resin layer 402 and the copper foil 403 on one surface of the base 401. However, the copper clad laminate according to the present invention is the base 401 The light reflection layer 402 and the copper foil 403 may be laminated on both sides. In addition, the copper clad laminate 400 shown in FIG. 9 is obtained by laminating the light reflecting layer 402 and the copper foil 403 on the base 401. The copper clad laminate according to the present invention uses the base 401. Instead, it may be configured only by the light reflecting resin layer 402 and the copper foil 403. In this case, the light reflecting resin layer 402 plays a role as a base material. In this case, for example, a light-reflecting resin layer 402 can be obtained by impregnating a glass cloth or the like with the thermosetting resin composition for light reflection according to the present embodiment and curing it.

  FIG. 10 is a schematic cross-sectional view showing an example of an optical semiconductor device manufactured using the copper-clad laminate according to the present invention. As shown in FIG. 10, the optical semiconductor device 500 is a surface-mount type light emitting diode including an optical semiconductor element 410 and a transparent sealing resin 404 provided so as to seal the optical semiconductor element 410. is there. In the optical semiconductor device 500, the semiconductor element 410 is bonded to the copper foil 403 through the adhesive layer 408, and is electrically connected to the copper foil 403 by a wire 409.

  Furthermore, as another embodiment of the member for mounting an optical semiconductor element according to the present invention, it is formed between a plurality of conductor members (connection terminals) on a substrate using the above-described thermosetting resin composition for light reflection. An optical semiconductor element mounting member having a light reflecting layer is also included. In another embodiment of the optical semiconductor device according to the present invention, the optical semiconductor element is mounted on the optical semiconductor element mounting member.

  FIG. 11 is a schematic cross-sectional view showing a preferred embodiment of an optical semiconductor device according to the present invention. As shown in FIG. 11, the optical semiconductor device 600 is formed between a base material 601, a plurality of conductor members 602 formed on the surface of the base material 601, and a plurality of conductor members (connection terminals) 602. The optical semiconductor element 610 is mounted on the optical semiconductor element mounting member including the light reflecting layer 603 made of the thermosetting resin composition for light reflection according to the present embodiment, and the optical semiconductor element 610 is sealed. Thus, a surface-mount type light emitting diode provided with a transparent sealing resin 604 is provided. In the optical semiconductor device 600, the optical semiconductor element 610 is bonded to the conductor member 602 through the adhesive layer 608, and is electrically connected to the conductor member 602 through a wire 609.

  As the substrate 601, a substrate used for an optical semiconductor element mounting member can be used without particular limitation, and examples thereof include a resin laminate such as an epoxy resin laminate.

  The conductor member 602 functions as a connection terminal, and can be formed by a known method such as a method of photoetching a copper foil.

  The optical semiconductor element mounting member is a light composed of the light reflecting thermosetting resin composition by applying the light reflecting thermosetting resin composition between the plurality of conductor members 602 on the substrate 601 and heat curing. It can be manufactured by forming the reflective layer 603.

  As a method for applying the light-reflective thermosetting resin composition according to the present embodiment to the substrate 601, for example, a printing method, a die coating method, a curtain coating method, a spray coating method, a roll coating method, or the like is used. Can do. At this time, the light-reflective thermosetting resin composition can contain a solvent so as to facilitate application. In addition, when using a solvent, about the thing based on the resin composition whole quantity by the mixture ratio of each component mentioned above, it is preferable to set what remove | excluded the solvent as a whole quantity.

  Although it does not specifically limit as heating conditions at the time of heat-hardening the coating film of the thermosetting resin composition for light reflections, For example, it is preferable to heat on 130-180 degreeC and the conditions for 30 to 600 minutes.

  Thereafter, the resin component adhering excessively to the surface of the conductor member 602 is removed by buffing or the like to expose the circuit formed of the conductor member 602, thereby forming an optical semiconductor element mounting member.

  In order to ensure the adhesion between the white resin layer 603 and the conductor member 602, it is also preferable to subject the conductor member 602 to a roughening treatment such as oxidation-reduction treatment or CZ treatment (manufactured by MEC Co., Ltd.).

  As mentioned above, although preferred embodiment of this invention was described, this invention is not restrict | limited to this.

  Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited thereto.

<Preparation of thermosetting resin composition for light reflection>
(Examples 1-3, Reference Examples 4-11 , Comparative Examples 1-6)
Table 1 and compounding ratio shown in 2 in accordance (parts by weight), the components were blended, was thoroughly kneaded by a mixer, and 15 minutes melt-kneaded at 40 ° C. by a mixing roll, performs cooling, pulverized, examples, reference The light-reflective thermosetting resin compositions of Examples and Comparative Examples were prepared.

<Evaluation of thermosetting resin composition for light reflection>
The thermosetting resin composition for light reflection obtained was pressure-molded on a hot plate at 180 ° C., post-cured at 150 ° C. for 2 hours, and a test piece having a thickness of 0.1 mm ± 0.05 mm was produced. The following evaluation was performed. The evaluation results are shown in Tables 1 and 2.

(Measurement of light reflectance)
The initial optical reflectivity (light reflectivity) of the test piece at a wavelength of 460 nm was measured using an integrating sphere spectrophotometer V-750 type (trade name, manufactured by JASCO Corporation).

(Leakage light measurement)
A light-emitting element having a wavelength peak at a wavelength of 460 nm is mounted, and a surface mount type optical semiconductor device provided with a reflection frame so as to surround it is used as a light source, and a CCD camera is installed so as to face the surface mount type optical semiconductor device Then, the distribution of light distribution from the light emitting elements was photographed and the region with the highest luminance was digitized. In this state, the luminance when a current of 100 mA was passed through the surface-mounted optical semiconductor device was 250,000 cd / m 2 , which was used as the luminance of the light source.

  The test piece is placed at a position where the surface mount type optical semiconductor device and the CCD camera are blocked so that the distance from the light emitting element is 1 mm, and light from the light source when a current of 100 mA is passed through the test piece. The distribution of the incoming light was photographed, and the area with the highest luminance was digitized to obtain the leakage light value, and the ratio of the leakage light reduction ratio to the light source was evaluated.

In Tables 1 and 2, * 1 to 11 are as follows.
* 1: Trisglycidyl isocyanurate (epoxy equivalent 100, manufactured by Nissan Chemical Co., Ltd., trade name: TEPIC-S)
* 2: Methylhexahydrophthalic anhydride (manufactured by Hitachi Chemical Co., Ltd.)
* 3: Hexahydrophthalic anhydride (manufactured by Wako Pure Chemical Industries, Ltd.)
* 4: Tetra-n-butylphosphonium-o, o-diethyl phosphorodithioate (made by Nippon Chemical Industry Co., Ltd., trade name: PX-4ET)
* 5: Trimethoxyepoxysilane (manufactured by Toray Dow Corning, trade name: A-187)
* 6: Fused silica (manufactured by Denki Kagaku Kogyo, trade name: FB-950)
* 7: Fused silica (trade name: FB-301, manufactured by Denki Kagaku Kogyo Co., Ltd.)
* 8: Fused silica (manufactured by Admatechs, trade name: SO-25R)
* 9: Titanium oxide (manufactured by Sakai Chemical Industry Co., Ltd., trade name: FTR-700)
* 10: Zinc oxide (manufactured by Sakai Chemical Industry Co., Ltd., trade name: STR-100C-LP)
* 11: Hollow particles (manufactured by Sumitomo 3M, trade name: S60-HS)

As shown in Tables 1 and 2, the light-reflective thermosetting resin compositions obtained in Examples 1 to 3 and Reference Examples 4 to 11 are all thin cases of 0.1 mm. However, the light reflectance is high and light leakage is small. In contrast, the light-reflective thermosetting resin compositions obtained in Comparative Examples 1 to 5 have significant light leakage. In particular, in Comparative Example 6 using only hollow particles, it was confirmed that a sufficient light leakage suppression effect could not be obtained. Moreover, in Example 3 which combined the titanium oxide and the hollow particle, it was confirmed that the light leakage suppression effect is higher than Reference Example 5.

  ADVANTAGE OF THE INVENTION According to this invention, the optical semiconductor element mounting member and optical semiconductor device which improved the light extraction efficiency by using the light-reflective thermosetting resin composition which can form the hardened | cured material which can fully reduce light leakage Can be provided.

<Fabrication of optical semiconductor device>
An optical semiconductor mounting substrate 110 shown in FIG. 1 was produced using the light-reflecting thermosetting resin composition obtained in Example 3. First, a 0.25 mm-thick copper lead frame whose surface was Ag-plated was used as the metal wiring 105 to be the optical semiconductor element mounting region 200, and the cathode and anode were designed as a pair of patterns. Next, “ATOM-FX” manufactured by MTEX Matsumura Co., Ltd. was used as a transfer molding machine, and batch molding was performed on a lead frame substrate by a known mold array package method at the time of transfer molding. The optical semiconductor element 100 is mounted on the optical semiconductor mounting substrate 110 obtained by batch molding, and the optical semiconductor element 100 and the metal wiring 105 are electrically connected by the bonding wire 102 and sealed with the transparent sealing resin 101. After passing through the process, the optical semiconductor device shown in FIG. 5 was obtained by dicing into individual pieces. In addition, regarding the size of the cavity of the mold at the time of transfer molding, the thinnest concave portion side wall portion of the optical semiconductor mounting substrate 110 after being separated into pieces in the dicing process is 0.1 mm, and the outer shape of the optical semiconductor device is 1.5 mm. It was designed to be × 1.5 mm and thickness 0.6 mm.

  The obtained optical semiconductor device is well lit by supplying current. It was confirmed that the light leakage of the side wall portion was not visually confirmed and the light leakage was sufficiently suppressed.

DESCRIPTION OF SYMBOLS 100 ... Optical semiconductor element, 101 ... Transparent sealing resin, 102 ... Bonding wire, 103 ... Hardened | cured material (reflector) of the thermosetting resin composition for light reflection, 103 '... Curing of the thermosetting resin composition for light reflection Material (insulating resin molding), 104 ... Ni / Ag plating, 105 ... metal wiring, 106 ... phosphor, 107 ... solder bump, 109 ... substrate, 110, 120, 130 ... optical semiconductor element mounting member, 150 ... Resin injection port, 151 ... mold, 200 ... optical semiconductor element mounting area, 300 ... LED element, 301 ... wire bond, 302 ... transparent sealing resin, 303 ... reflector, 304 ... lead, 305 ... phosphor, 306 ... die bond Material: 400 ... Copper-clad laminate, 401 ... Base material, 402 ... Light reflecting resin layer, 403 ... Copper foil, 404 ... Sealing resin, 408 ... Adhesive layer, 409 ... Wire, DESCRIPTION OF SYMBOLS 410 ... Optical semiconductor element, 500,600 ... Optical semiconductor device, 601 ... Base material, 602 ... Conductive member, 603 ... Light reflection resin layer, 604 ... Sealing resin, 608 ... Adhesion layer, 609 ... Wire, 610 ... Optical semiconductor element.

Claims (3)

  1. Mounting an optical semiconductor element having a recess for mounting a component, and at least a part of the recess being a molded body having a thickness of 0.1 mm or less of a thermosetting resin composition for light reflection A member for
    The thermosetting resin composition for light reflection contains inorganic oxide particles having a refractive index of 1.8 to 3.0, and hollow particles having a refractive index of voids of 1.0 to 1.1,
    A member for mounting an optical semiconductor element, wherein a light reflectance at a wavelength of 460 nm of a test piece having a thickness of 0.1 mm obtained by pressure molding and post-curing the thermosetting resin composition for light reflection is 90% or more.
  2. A board, and a first connection terminal and a second connection terminal provided on the board,
    Between the first connection terminal and the second connection terminal, having a layer made of a cured product having a thickness of 0.1 mm or less of the thermosetting resin composition for light reflection,
    The thermosetting resin composition for light reflection contains inorganic oxide particles having a refractive index of 1.8 to 3.0, and hollow particles having a refractive index of voids of 1.0 to 1.1,
    The cured product is formed by using a thermosetting resin composition for light reflection in which a 0.1 mm thick test piece obtained by pressure molding and post-curing has a light reflectance of 90% or more at a wavelength of 460 nm. An optical semiconductor element mounting member.
  3.   An optical semiconductor device comprising: the optical semiconductor element mounting member according to claim 1; and an optical semiconductor element mounted on the optical semiconductor element mounting member.
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KR101845800B1 (en) * 2011-09-08 2018-04-05 해성디에스 주식회사 Method for manufacturing led reflector
CN104081547A (en) 2012-02-15 2014-10-01 松下电器产业株式会社 Light emitting apparatus and method for manufacturing same
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JP2008143981A (en) * 2006-12-07 2008-06-26 Three M Innovative Properties Co Optically reflective resin composition, light-emitting device and optical display

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