JP5748611B2 - Light emitting device - Google Patents

Description

  The present invention relates to a light emitting device including a light emitting element.

  In recent years, development of a light-emitting device having a light-emitting element has been advanced. The light-emitting device has attracted attention with respect to low power consumption or long product life. As a light-emitting device, there is a light-emitting device that converts light emitted from a light-emitting element into visible light having a specific wavelength band by a wavelength conversion unit and extracts the light to the outside (see Patent Document 1 below).

Japanese Patent Laid-Open No. 2002-232002

  In the development of light-emitting devices, there is a risk that the life and reliability of the light-emitting device will decrease due to heat from the light-emitting elements and the wavelength conversion unit, or that the light from the light-emitting elements will be seen directly, causing adverse effects on the human body Therefore, there is a demand for a structure that hardly emits light from the light emitting element directly to the outside.

A light emitting device according to an embodiment of the present invention is provided in a first substrate and a central portion located in a central region on the first substrate , and a part of an outer peripheral portion located in an outer peripheral region on the first substrate. A second substrate that is exposed to light, a light emitting element that emits light including ultraviolet light, provided on the second substrate, and surrounds the light emitting element that is provided on the second substrate, and a lower surface of the second substrate A frame extending to the exposed outer peripheral portion of one substrate; a wavelength conversion member containing a phosphor provided on the frame and spaced apart from the light emitting element; A lead terminal connected to a wiring conductor electrically connected to the light emitting element and formed on the upper surface of at least one of the wiring conductor and the lead terminal formed on the exposed outer peripheral portion of the first substrate. A gold-plated layer mainly composed of gold And said that there were pictures.

  A light emitting device according to an embodiment of the present invention is provided on a first substrate and a central portion located in a central region on the first substrate, and a part of an outer peripheral portion located in an outer peripheral region of the first substrate. The exposed second substrate, the light emitting element provided on the second substrate, and the light emitting element provided on the second substrate surrounding the light emitting element and extending to the exposed outer peripheral portion of the first substrate. An extended frame, a wavelength conversion member containing a phosphor, which is supported on the frame and spaced from the light emitting element, and formed on the exposed outer periphery of the first substrate A lead terminal connected to the wiring conductor, and a gold plating layer mainly composed of gold formed on at least one of the wiring conductor and the lead terminal.

  According to the present invention, it is possible to provide a light-emitting device having a structure that can suppress a decrease in the lifetime and reliability of the light-emitting device due to heat from the light-emitting element and the wavelength conversion member and hardly emit light from the light-emitting element directly to the outside. be able to.

1 is a perspective view showing an overview of a light emitting device according to an embodiment of the present invention. It is a perspective view which shows the external appearance of the light-emitting device which concerns on one Embodiment of this invention, Comprising: The light-emitting element and the state which removed the frame are shown. It is sectional drawing of the light-emitting device which concerns on one Embodiment of this invention. It is the expanded sectional view which expanded a part of light-emitting device shown in FIG. It is the expanded sectional view which expanded a part of light-emitting device shown in FIG. It is a permeation | transmission top view of the light-emitting device concerning one embodiment of this invention.

  Embodiments of a light emitting device according to the present invention will be described below with reference to the accompanying drawings. In addition, this invention is not limited to the following embodiment.

<Schematic configuration of light emitting device>
FIG. 1 is a schematic perspective view of a light emitting device according to an embodiment of the present invention, which is seen obliquely from above and obliquely below. FIG. 2 is an overview perspective view of the light emitting device, and shows an overview of the second substrate with the light emitting element and the frame removed. FIG. 3 is a cross-sectional view taken along the line XX ′ of the light emitting device shown in FIG. FIG. 4 is an enlarged cross-sectional view in which a part A of the light emitting device shown in FIG. 3 is enlarged. FIG. 5 is an enlarged cross-sectional view in which a part B of the light emitting device shown in FIG. 3 is enlarged. FIG. 6 is a transmission plan view of the light emitting device and shows the arrangement of the light emitting elements and the lead terminals with respect to the gold plating layer formed on the first substrate.

  The light emitting device 1 is provided in a first substrate 2 and a central portion R1 located in a central region on the first substrate 2, and a second portion in which a part of the outer peripheral portion R2 located in the outer peripheral region of the first substrate 2 is exposed. The substrate 3, the light emitting element 4 provided on the second substrate 3, and the light emitting element 4 provided on the second substrate 3 surround the light emitting element 4 and extend to the exposed outer peripheral portion R <b> 2 of the first substrate 2. The frame 5, the wavelength conversion member 7 containing the phosphor 6 that is supported on the frame 5 and spaced from the light emitting element 4, and the exposed outer peripheral portion R 2 of the first substrate 2. A lead terminal 9 connected to the formed wiring conductor and a gold plating layer 8 mainly composed of gold formed on the upper surface of the wiring conductor are provided. The light-emitting element 4 according to the present embodiment is, for example, a light-emitting diode, and emits light including ultraviolet light toward the outside by recombination of electrons and holes in a pn junction using a semiconductor. To do.

  The first substrate 2 is an insulating substrate and is made of, for example, a ceramic material such as alumina or mullite, or a glass ceramic material. Or it consists of a composite material which mixed several materials among these materials.

  The first substrate 2 is formed with a wiring conductor that is electrically connected to the inside and outside of the first substrate 2. The wiring conductor is made of a conductive material such as tungsten, molybdenum, manganese, or copper. For the wiring conductor, for example, a metal paste obtained by adding an organic solvent to a powder of tungsten or the like is printed in a predetermined pattern on a ceramic green sheet to be the first substrate 2, and a plurality of ceramic green sheets are laminated and fired. Can be obtained. A gold plating layer 8 is formed on the surface of the wiring conductor. The gold plating layer 8 is a layer containing gold as a main component and having a gold ratio of 56% or more in the material.

  The 1st board | substrate 2 is rectangular shape, Comprising: The length of one side when planarly viewed is set to 3 mm or more and 30 mm or less, for example. The thickness of the first substrate 2 in the vertical direction is set to, for example, 0.3 mm or more and 3 mm or less.

By covering the wiring conductor, the gold plating layer 8 can suppress the wiring conductor from being oxidized and increasing the electrical resistance. Further, the gold plating layer 8 emits light from the light emitting element 4 because it has a low reflectance to light having a wavelength shorter than blue, particularly ultraviolet light, as compared with a reflectance to light having a longer wavelength than blue, and light absorption increases. When the light is blue to short-wavelength light, the frame 5 or the second substrate 3 and the frame 5 from the exposed outer peripheral portion R2 of the first substrate 2 where the joint between the second substrate 3 and the frame 5 becomes small. The light emitted from the light emitting element 4 radiated to the outside of the light emitting device 1 through the junction can be absorbed, and the light from the light emitting element 4 can be prevented from being directly emitted to the outside. When the surface of the wiring conductor is plated with silver or the like having the same reflectivity with respect to light having a shorter wavelength than blue as compared with the reflectivity with respect to light having a longer wavelength than blue, the light from the light emitting element 4 is framed with the second substrate 3. Radiated from the exposed outer periphery of the second substrate 3 of the first substrate 2 where the joint portion with the body 5 is reduced to the outside of the light emitting device 1 through the frame body 5 or the joint portion between the second substrate 3 and the frame body 5. End up. In addition, here,
Blue to short wavelength light refers to light having a wavelength of 350 nm or more and 530 nm or less, and blue to long wavelength light refers to light having a wavelength greater than 530 nm.

  The gold plating layer 8 is formed on most of the upper surface of the first substrate 2. The first substrate 2 is continuously formed from the outer peripheral portion R2 to the central portion R1 of the first substrate 2. The gold plating layer 8 is formed as a pair of layers on the upper surface of the first substrate 2. The reason why the gold plating layer 8 is paired is to prevent conduction between the cathode and the anode of the light emitting element 4. Since the gold plating layer 8 is formed large on the upper surface of the first substrate 2, when the light emitted from the light emitting element 4 is light with a short wavelength from blue, the light emitted from the light emitting element 4 leaks to the outside. Can be effectively suppressed.

  The second substrate 3 is provided on the first substrate 2. The second substrate 3 is provided in the central portion R1 located in the central region on the first substrate 2 and exposes a part of the outer peripheral portion R2 located in the outer peripheral region of the central portion R1. Similar to the first substrate 2, the second substrate 3 is an insulating substrate and is made of, for example, a ceramic material such as alumina or mullite, or a glass ceramic material. Or it consists of a composite material which mixed several materials among these materials.

  The second substrate 3 is formed with wiring conductors and via conductors 10 that electrically connect the inside and outside of the second substrate 3. The wiring conductor or via conductor 10 is made of a conductive material such as tungsten, molybdenum, manganese, or copper. For the wiring conductor or via conductor 10, for example, a metal paste obtained by adding an organic solvent to a powder of tungsten or the like is printed in a predetermined pattern on a ceramic green sheet to be the second substrate 3, and a plurality of ceramic green sheets are laminated. And obtained by firing.

  The second substrate 3 is a plate having a pair of notches 3a. The notches 3a are formed at both ends of the plate. When it is assumed that the second substrate 3 has a notch removed, the length of one side when viewed in plan is set to 3 mm to 30 mm, for example. The thickness of the second substrate 3 in the vertical direction is set to, for example, not less than 0.3 and not more than 3 mm. The notch 3a has a rectangular shape, and the length of one side when viewed in plan is set to, for example, 1 mm or more and 10 mm or less. The gold plating layer 8 formed on the upper surface of the first substrate 2 is exposed from the notch 3a.

  The via conductor 10 penetrates the second substrate 3 in the vertical direction and is formed in the central portion R1 of the second substrate 3. The via conductor 10 is electrically connected to the gold plating layer 8 formed on the upper surface of the first substrate 2. At least one via conductor 10 is formed on each of the pair of gold plating layers 8 so as to be electrically connected to each of the pair of gold plating layers 8. The via conductor 10 can electrically connect the light emitting element 4 and the gold plating layer 8. The via conductor 10 has a columnar shape, and is set to have a diameter of 0.1 mm to 1 mm, for example. The via conductor 10 is obtained by forming a via hole in the second substrate 3 using, for example, punching or laser processing, and printing a conductive material in the via hole.

  The light emitting element 4 is mounted on the second substrate 3. The light emitting element 4 is electrically connected to the via conductor 10 formed on the second substrate 3 via, for example, a brazing material or solder.

The light emitting element 4 has a translucent base and an optical semiconductor layer formed on the translucent base. The translucent substrate may be any substrate that can grow an optical semiconductor layer using a chemical vapor deposition method such as a metal organic chemical vapor deposition method or a molecular beam epitaxial growth method. As a material used for the light-transmitting substrate, for example, sapphire, gallium nitride, aluminum nitride, zinc oxide, zinc selenide, silicon carbide, silicon, or zirconium diboride can be used. In addition, the thickness of a translucent base | substrate is 50 micrometers or more and 1000 micrometers or less, for example.

The optical semiconductor layer includes a first semiconductor layer formed on the translucent substrate, a light emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light emitting layer. . The first semiconductor layer, the light emitting layer, and the second semiconductor layer are, for example, a group III nitride semiconductor, a group III-V semiconductor such as gallium phosphide or gallium arsenide, or a group III nitride such as gallium nitride, aluminum nitride, or indium nitride. A physical semiconductor or the like can be used. The thickness of the first semiconductor layer is, for example, 1 μm to 5 μm, the thickness of the light emitting layer is, for example, 25 nm to 150 nm, and the thickness of the second semiconductor layer is, for example, 50 nm to 600 nm. Moreover, in the light emitting element 4 configured as described above, an element that emits excitation light in a wavelength range of, for example, 370 nm to 420 nm can be used.

  The frame 5 is made of a ceramic material like the first substrate 2 or the second substrate 3, is laminated on the upper surface of the second substrate 3, and is connected via an adhesive such as a resin. The frame 5 is provided so as to surround the light emitting element 4 on the second substrate 3. Note that when the shape of the inner wall surface of the frame 5 is circular in plan view, the light emitted from the light emitting element 4 can be reflected in all directions and emitted to the outside.

  The frame 5 may be made of a porous material formed by sintering a ceramic material such as aluminum oxide, titanium oxide, zirconium oxide or yttrium oxide in a desired shape. In the case where the frame body 5 is made of a porous material, the frame body 5 can be suppressed from lowering the reflectivity due to light energy emitted from the light emitting element 4 and mechanical strength deterioration. Furthermore, the light from the light emitting element 4 is diffused and reflected on the surface of the frame 5 made of a porous material. Therefore, the light emitted from the light emitting element 4 enters the wavelength conversion member 7 without being concentrated on a part of the wavelength conversion member 7. As a result, the wavelength conversion member 7 has a decrease in wavelength conversion efficiency due to a temperature increase in a part of the wavelength conversion member 7, and a decrease in transmittance and mechanical strength due to a temperature increase in a part of the wavelength conversion member 7. Is suppressed.

  Further, the region surrounded by the frame body 5 includes a wall surface perpendicular to the upper surface of the second substrate 3, an inclined surface that inclines broadly from the lower part to the upper part, and a step 5 a inside the upper end of the frame body 5. Is provided. For example, a metal layer made of tungsten, molybdenum, copper, silver, or the like may be formed on the wall surface of the frame 5. This metal layer has a function of reflecting light emitted from the light emitting element 4.

  In addition, the inclination angle of the inclined surface of the frame 5 is set to an angle of, for example, 55 degrees or more and 70 degrees or less with respect to the upper surface of the substrate 2. The surface roughness of the wall surface of the frame 5 is set such that the arithmetic average roughness Ra is, for example, 1 μm or more and 3 μm or less.

  The step 5 a of the frame body 5 has a function of supporting the wavelength conversion member 7. The step 5 a is formed by notching a part of the upper part of the frame body 5 toward the inside, and is provided continuously so as to go around the inner peripheral surface of the frame body 5. The part can be supported.

The frame body 5 is provided over the portion where the notch 3 a is provided, and extends to the exposed outer peripheral portion R 2 of the first substrate 2. A part of the outer periphery of the lower surface of the frame 5 is provided with a gap from the gold plating layer 8 formed on the upper surface of the first substrate 2. And the lead terminal 9 is connected on the gold plating layer 8 formed in the outer peripheral part R2 which the 1st board | substrate 2 exposed. Note that the gap between the upper surface of the gold plating layer 8 and the lower surface of the frame 5 corresponds to the thickness of the second substrate 3. The frame body 5 protrudes outward from the side surface of the second substrate 3 in a size of, for example, 1 mm or more and 10 mm or less.

  A region surrounded by the frame 5 is filled with a light-transmitting sealing member 11. The sealing member 11 has a function of sealing the light emitting element 4 and transmitting light emitted from the light emitting element 4. The sealing member 11 is a region surrounded by the frame body 5 in a state where the light emitting element 4 is accommodated inside the frame body 5, and the wavelength conversion member 7 is inclined and joined to the frame body 5 by the sealing member 11. In order not to be carried out, it is filled up to a position lower than the height position of the step 5a. Note that the sealing member 11 is made of a translucent insulating resin such as a silicone resin, an acrylic resin, or an epoxy resin. The thermal conductivity of the sealing member 11 is set to, for example, 0.14 W / (m · K) or more and 0.21 W / (m · K) or less.

  The wavelength conversion member 7 has a function of converting the wavelength of light emitted from the light emitting element 4. The wavelength conversion member 7 emits light when light emitted from the light emitting element 4 enters the inside and the phosphor 6 contained therein is excited.

  The wavelength conversion member 7 is made of, for example, a translucent insulating resin such as a fluororesin, a silicone resin, an acrylic resin, or an epoxy resin, or a translucent glass. In the insulating resin or glass, for example, a wavelength of 430 nm or more and 490 nm or less. Contains a blue phosphor that emits fluorescence, for example, a green phosphor that emits fluorescence of 500 nm to 560 nm, for example, a yellow phosphor that emits fluorescence of 540 nm to 600 nm, for example, a red phosphor that emits fluorescence of 590 nm to 700 nm . When translucent glass is used as the wavelength conversion member 7, the airtightness of the light emitting device 1 can be improved.

The phosphor 6 is uniformly dispersed in the wavelength conversion member 7. The thermal conductivity of the wavelength conversion member 7 is set to, for example, 0.1 W / (m · K) or more and 0.8 W / (m · K) or less. The coefficient of thermal expansion of the wavelength conversion member 7 is set to, for example, 0.8 × 10 ⁻⁵ / K or more and 8 × 10 ⁻⁵ / K or less. The refractive index of the wavelength conversion member 7 is set to, for example, 1.3 or more and 1.6 or less. For example, the refractive index of the wavelength conversion member 7 can be adjusted by adjusting the composition ratio of the material of the wavelength conversion member 7.

  Moreover, the total thickness of the wavelength conversion member 7 is set to, for example, 0.3 mm or more and 3 mm or less, and the thickness is set to be constant. Here, the constant thickness includes a thickness error of 0.5 μm or less. By making the thickness of the wavelength conversion member 7 constant, the amount of light excited in the wavelength conversion member 7 can be adjusted to be uniform, and luminance unevenness in the wavelength conversion member 7 can be suppressed. it can.

On the step 5a of the frame body 5, the end of the wavelength conversion member 7 is fixed via an adhesive member. The adhesive member fixes the wavelength conversion member 7 to the frame body 5. The adhesive member is provided from the end of the wavelength conversion member 7 to the step 5a of the frame 5. For the adhesive member, for example, a light-transmitting insulating resin such as silicone resin, acrylic resin, or epoxy resin, or light-transmitting glass is used. The thermal conductivity of the adhesive member is set to, for example, 0.1 W / (m · K) or more and 0.8 W / (m · K) or less. The thermal expansion coefficient of the adhesive member is set to, for example, 0.8 × 10 ⁻⁵ / K or more and 8 × 10 ⁻⁵ / K or less.

The lead terminal 9 is a member for electrically connecting an external electronic device, an external substrate, and the like. The lead terminal 9 is connected to the gold plating layer 8 formed on the exposed outer peripheral portion R1 of the first substrate 2 via a brazing material. The gold plating layer 8 and the lead terminal 9 are electrically connected. The lead terminal 9 is made of a conductive material such as copper, an iron-nickel alloy, or an iron-nickel-cobalt alloy, for example. The lead terminal 9 has a rectangular shape, and the length of one side when viewed in plan is set to, for example, 2 mm or more and 20 mm or less. The vertical thickness of the lead terminal 9 is, for example, not less than 0.1 mm and not more than 2.5 mm, and is set to be smaller than the gap between the upper surface of the gold plating 9 and the lower surface of the frame body 5. As a result, the heat from the wavelength conversion member 7 due to the heat generation of the phosphor is not directly transmitted to the lead terminal 9 through the frame body 5, and the generation of thermal stress and the change in material properties at the joint portion of the lead terminal 9 are prevented. Can be suppressed. Furthermore, the heat from the light emitting element 4 is not transmitted from the first substrate 2 to the frame body 5 via the lead terminals 9, but can suppress changes in material properties of the frame body 5, the sealing member 11, and the wavelength conversion member 7. At the same time, heat is dissipated into the atmosphere from the surface of the lead terminal 9 exposed to face the lower surface of the frame 5. Note that the shape of the lead terminal 9 is not limited to a rectangular shape, and may be various shapes that combine a rectangular shape, a circular shape, an elliptical shape, or a polygonal shape.

  The lead terminal 9 is provided on each of the pair of exposed outer peripheral portions R2. The pair of lead terminals 9 are fixed in a state of being spaced from the side surface of the second substrate 3. As a result, the heat from the light emitting element 4 becomes difficult to be transmitted to the lead terminal 9 through the second substrate 3, and the deterioration of the bonding strength between the wiring conductor and the lead terminal 9 due to heat and the occurrence of cracks and cracks due to thermal stress. Can be suppressed. Further, when the width of one lead terminal 91 is made smaller than the other lead terminal 92 in order to determine the directionality of the lead terminal 9 when the lead terminal 9 is joined to the wiring conductor, one lead terminal 91 and the second substrate 3 is fixed in a state in which the distance from the side surface of the third lead terminal 92 is larger than the distance from the side surface of the second substrate 3 of the other lead terminal 92. As a result, the heat from the light emitting element 4 can be hardly transmitted to the lead terminal 91 via the second substrate 3 or the first substrate 2. The lead terminal 9 is provided to be spaced from the side surface of the second substrate 3 by, for example, 0.5 mm or more and 5 mm or less.

  There are a pair of lead terminals 9 that are close to the side surface of the second substrate 3 and a state in which the pair of lead terminals 9 are spaced apart from the side surface of the second substrate 3, so that the connection location of the lead terminal 9 is It becomes asymmetrical. Due to the difference in the connection state of the lead terminals 9, it is possible to effectively reduce the possibility of an error in the directionality when the light emitting device 1 is assembled.

  The lead terminal 9 may be provided with a buffer member 12 between the side surface of the lead terminal 9 and the side surface of the second substrate 3. The buffer member 12 is formed by being filled between the side surface of the lead terminal 9 and the side surface of the second substrate 3. As a result, it is possible to improve the bonding strength between the first substrate 2, the second substrate and the frame 5, and also due to the difference in thermal expansion between the first substrate 2, the second substrate, the frame 5 and the lead terminal 9. Thermal stress can be relaxed. The buffer member 12 is made of, for example, a resin material such as silicone resin, epoxy resin, or acrylic resin, or a glass material, and may be a translucent material that transmits light emitted from the light emitting element 4. Changes in material properties due to light can be suppressed. Further, the light from the light emitting element 4 that passes through the buffer member 12 can be suppressed from being absorbed by the gold plating layer 8 and radiated to the outside of the light emitting device 1. In addition, when the buffer member 12 consists of a translucent material, a refractive index is set to 1.3 or more and 1.6 or less, for example.

  A buffer member 12 made of a translucent material is filled between the side surface of the lead terminal 9 and the side surface of the second substrate 3 to provide a difference in refractive index between the buffer member 12 and its periphery. The light emitted from the light emitting element 4 is reflected by the buffer member 12, or the traveling direction is changed and absorbed by the gold plating layer 8, thereby reducing the amount of light from the light emitting element 4 traveling to the outside. be able to. The buffer member 12 may be provided so as to be attached to a part of the upper surface of the lead terminal 9.

  Further, by providing the buffer member 12 only between the side surface of the lead terminal 9 and the side surface of the second substrate 3, the heat from the wavelength conversion member 7 due to the heat generation of the phosphor is buffered through the frame body 5. The effect of suppressing the change in material properties due to the heat of the buffer member 12 is achieved.

In the light emitting device 1 according to the present embodiment, the second substrate 3 is stacked on the first substrate 2, and the height position of the upper surface of the first substrate 2 is made different from the height position of the upper surface of the second substrate 3. The height position of the upper surface of the second substrate 3 is set high, and the light emitting element 4 is mounted on the upper surface. Of the light emitted from the light emitting element 4, the light traveling upward from the light emitting element 4 is converted into visible light by the wavelength conversion member 7 and extracted outside. Of the light emitted from the light emitting element 4, the light traveling in the plane direction from the side surface of the light emitting element 4 is reflected by the frame body 4 and travels upward or downward. In addition, when the light emitted from the light emitting element 4 is blue to short wavelength light, the light traveling downward from the light emitting element 4 out of the light emitted from the light emitting element 4 passes through the second substrate 3. In addition, it is possible to prevent the ultraviolet light from being directly taken out by being reflected or absorbed by the gold plating layer 8.

  In the light emitting device 1 according to the present embodiment, since the frame 5 is connected to the second substrate 3 via an adhesive, ultraviolet light is emitted from the layer where the adhesive is formed to the outside. Try to be released directly. However, when the traveling direction of ultraviolet light changes due to the difference in refractive index between the adhesive and its surroundings, and the light emitted from the light emitting element is light of blue to short wavelength, the gold plating layer 8 causes the light from the light emitting element to Light from the light-emitting element that is reflected or absorbed and extracted to the outside can be reduced.

  In addition, this invention is not limited to the above-mentioned form, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention. For example, instead of the gold plating layer 8, a conductive material that absorbs or reflects light may be used. Further, the gold plating layer 8 may not be formed on most of the upper surface of the first substrate 2. In the above-described embodiment, the gold plating layer 8 is formed on the wiring conductor. However, the gold plating layer 8 may be formed on the upper surface of the lead terminal 9.

<Method for manufacturing light emitting device>
Here, a method of manufacturing the light emitting device 1 shown in FIG. 1 will be described. First, the first substrate 2 and the second substrate 3 are prepared. If the first substrate 2 and the second substrate 3 are made of, for example, an aluminum oxide sintered body, an organic binder, a plasticizer, a solvent, or the like is added to the raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. Are added and mixed to obtain a mixture. And a some green sheet is produced from a mixture.

  Moreover, a high melting point metal powder such as tungsten or molybdenum is prepared, and an organic binder, a plasticizer, a solvent, or the like is added to and mixed with the powder to obtain a metal paste. Then, a metallized pattern serving as a wiring conductor and, if necessary, a via conductor 10 are printed in a predetermined pattern on the ceramic green sheet to be the first substrate 2 or the second substrate 3, and fired in a state where a plurality of ceramic green sheets are laminated. As a result, the first substrate 2 and the second substrate 3 can be prepared.

  A frame 5 is prepared. For the frame 5, a ceramic material such as aluminum oxide, titanium oxide, zirconium oxide or yttrium oxide is prepared. And after filling and drying a ceramic material in the formwork of the frame 5, the frame 5 which has the level | step difference 5a can be prepared by baking.

  Next, a pair of lead terminals 9 is prepared. The lead terminal 9 can be manufactured by mold processing. Then, a pair of lead terminals 9 are electrically connected to the exposed gold plating layer 8 on the first substrate 2 via, for example, a brazing material or solder. Then, the light emitting element 4 is mounted on the upper surface of the second substrate 3 and in the central portion R2, and the light emitting element 4 and the via conductor 10 are electrically connected.

  Next, the frame body 5 is provided on the second substrate 3 by bonding with an adhesive made of a silicone resin made of a translucent material. At this time, the frame body 5 is bonded to the first substrate 2 so that the adhesive material made of silicone resin is filled between the lead terminal 9 and the side surface of the second substrate 3. The buffer member 12 can be provided simultaneously with the bonding to the substrate 2.

  And the area | region enclosed with the frame 5 on the board | substrate 2 is filled with the silicone resin as the sealing member 11, for example. Then, for example, the silicone resin is heated to a temperature of 150 ° C. or higher to cure the silicone resin, thereby forming the sealing member 11 and sealing the light emitting element 4.

  Next, the wavelength conversion member 7 is prepared. The wavelength conversion member 7 can be produced by mixing a phosphor with an uncured resin and using a sheet forming technique such as a doctor blade method, a die coater method, an extrusion method, a spin coating method, or a dip method. The wavelength conversion member 7 can also be obtained by filling the mold with the uncured wavelength conversion member 7 and curing it.

  And the prepared wavelength conversion member 7 is aligned on the level | step difference 5a of the frame 5, and it adhere | attaches through the silicone resin as an adhesion member. Thereafter, the silicone resin is heated to a temperature of, for example, 150 ° C. or higher and 360 ° C. or lower at which the sealing member 11 is not destroyed, thereby curing the silicone resin. In this way, the light emitting device 1 can be manufactured.

DESCRIPTION OF SYMBOLS 1 Light-emitting device 2 1st board | substrate 3 2nd board | substrate 3a Notch 4 Light-emitting element 5 Frame 5a Step 6 Phosphor 7 Wavelength conversion member 8 Gold plating layer 9 Lead terminal 10 Via conductor 11 Sealing member 12 Buffering member R1 Center part R2 Outer circumference Part

Claims (4)

A first substrate;
A second substrate provided in a central portion located in a central region on the first substrate and exposing a part of an outer peripheral portion located in an outer peripheral region on the first substrate ;
A light emitting device that emits light including ultraviolet light, provided on the second substrate;
A frame which is provided on the second substrate and surrounds the light emitting element, and whose lower surface extends to the outer peripheral portion where the first substrate is exposed;
A wavelength converting member containing a phosphor, which is supported on the frame body and spaced apart from the light emitting element;
A lead terminal connected to a wiring conductor formed on the exposed outer peripheral portion of the first substrate and electrically connected to the light emitting element ;
A light emitting device comprising: a gold plating layer mainly composed of gold formed on an upper surface of at least one of the wiring conductor and the lead terminal. The light-emitting device according to claim 1,
Wherein is provided with a gap between the side surface and the side surface of the second substrate of the lead terminals, the light emitting device characterized by cushioning member is provided in the gap. The light-emitting device according to claim 1 or 2,
The second substrate is provided with a via conductor electrically connected to the light emitting element,
The light-emitting device, wherein the gold plating layer is continuously formed from the outer peripheral portion of the first substrate to the central portion of the first substrate, and is electrically connected to the via conductor. The light-emitting device according to any one of claims 1 to 3,
The light emitting device according to claim 1, wherein an end surface of the lead terminal on the central portion side is disposed with a space from a side surface of the second substrate.

Images