JP4387160B2 - Manufacturing method of light emitting element storage package - Google Patents

Manufacturing method of light emitting element storage package Download PDF

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JP4387160B2
JP4387160B2 JP2003368351A JP2003368351A JP4387160B2 JP 4387160 B2 JP4387160 B2 JP 4387160B2 JP 2003368351 A JP2003368351 A JP 2003368351A JP 2003368351 A JP2003368351 A JP 2003368351A JP 4387160 B2 JP4387160 B2 JP 4387160B2
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emitting element
plating
light emitting
wiring pattern
plating film
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JP2005136019A (en
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芳和 三原
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Sumitomo Metal SMI Electronics Device Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate

Description

本発明は、ＬＥＤ等の発光素子をセラミック多層基板の一方の主面側に備えられた枠体からなる凹部に搭載して収納するための発光素子収納用パッケージの製造方法に関する。 The present invention relates to a light emitting device manufacturing method of accommodating package for housing mounted in a recess made a light emitting device such as an LED from one main surface side in a provided frame of the ceramic multilayer substrate.

従来からＬＥＤ等の発光素子を収納するための発光素子収納用パッケージとしては、プラスチック製や、セラミック製のものが用いられてきた。発光素子は、光出力の増加の要求に対応するのに電流を増加させることで対応できるが、発光素子自体の温度も上昇する。従って、従来のプラスチック製の発光素子収納用パッケージは、プラスチックの耐熱性が十分でなくなり問題が発生している。   Conventionally, as a light emitting element storage package for storing a light emitting element such as an LED, a plastic or ceramic package has been used. The light emitting element can respond to the demand for an increase in light output by increasing the current, but the temperature of the light emitting element itself also rises. Therefore, the conventional plastic light emitting element storage package has a problem because the heat resistance of the plastic is not sufficient.

図４（Ａ）に示すように、従来のセラミック製の発光素子収納用パッケージ５０は、通常、発光素子５１を収納させるための凹部５２を、凹部５２の外形の大きさの孔を穿孔した枠体５３となるセラミックグリーンシートと、孔を設けない平板５４となるセラミックグリーンシートを重ね合わせ積層して形成している。また、積層する前のセラミックグリーンシートには、金属導体ペーストを用いて必要とする、例えば、ボンディングパッド５５や、外部接続端子パッド５６や、それぞれのパターン間を接続させるため等の配線パターン等の導体パターンをスクリーン印刷で形成している。複数枚のセラミックグリーンシートを積層した後は、セラミックグリーンシートと導体パターンを同時焼成している。また、図４（Ｂ）に示すように、従来の発光素子収納用パッケージ５０ａは、凹部５２を、セラミックグリーンシートに導体パターンをスクリーン印刷で形成し、焼成して形成した平板５４の一方の主面の外周部に発光素子５１を囲繞できるような金属製のリング状からなる枠体５３ａを接合させて設けている。なお、この発光素子収納用パッケージ５０、５０ａには、凹部５２にＬＥＤ等の発光素子５１が搭載され、発光素子５１と電気的に導通状態とするために、凹部５２の中に設けられているボンディングパッド５５とボンディングワイヤ５７で接続させている。また、この発光素子収納用パッケージ５０、５０ａの平板５４の他方の主面に設けられる外部接続端子パッド５６は、ボンディングパッド５５と電気的に導通状態となっている。   As shown in FIG. 4A, a conventional ceramic light-emitting element housing package 50 usually has a recess 52 for housing the light-emitting element 51, and a frame in which a hole having an outer size of the recess 52 is perforated. The ceramic green sheet to be the body 53 and the ceramic green sheet to be the flat plate 54 having no holes are laminated and laminated. In addition, the ceramic green sheets before lamination are required using a metal conductor paste, for example, a bonding pad 55, an external connection terminal pad 56, a wiring pattern for connecting each pattern, etc. The conductor pattern is formed by screen printing. After laminating a plurality of ceramic green sheets, the ceramic green sheets and the conductor pattern are fired simultaneously. Further, as shown in FIG. 4B, a conventional light emitting element storage package 50a has a concave portion 52 formed on one side of a flat plate 54 formed by forming a conductive pattern on a ceramic green sheet by screen printing and firing. A frame 53a made of a metal ring that can surround the light emitting element 51 is joined to the outer periphery of the surface. The light emitting element storage packages 50, 50 a are provided with a light emitting element 51 such as an LED in the concave portion 52, and are provided in the concave portion 52 so as to be electrically connected to the light emitting element 51. The bonding pads 55 and the bonding wires 57 are connected. In addition, the external connection terminal pads 56 provided on the other main surface of the flat plate 54 of the light emitting element storage packages 50 and 50 a are electrically connected to the bonding pads 55.

発光素子収納用パッケージ５０には、通常、凹部５２に搭載される発光素子５１の発光効率を向上させるために、凹部５２の内側壁となる枠体５３の内周側面を１又は複数枚のセラミックグリーンシートを用いて上面側の開口を広くする階段状や、テーパ状等にして発光素子５１からの光を上面側に反射させることで、上面側への集光を増加させる工夫がなされている。そして、更に、この枠体５３の少なくとも内周側面には、ボンディングパッド５５や、外部接続端子パッド５６等を形成する場合と同様な金属導体ペーストを用いた導体パターンにＮｉめっき、及びＡｕめっきを施して光の反射効率の向上を計っている。また、発光素子収納用パッケージ５０ａには、通常、凹部５２に搭載される発光素子５１の発光効率を向上させるために、凹部５２の内側壁となる枠体５３ａの内周側面を金属製のリングを加工して上面側の開口を広くするテーパ状として発光素子５１からの光を上面側に反射させることで上面側への集光を増加させる工夫がなされている。そして、更に、この枠体５３ａの少なくともリング状の内周側面には、Ｎｉめっき、及びＡｕめっきを施したりして光の反射効率の向上を計っている。   In the light emitting element storage package 50, in order to improve the light emission efficiency of the light emitting element 51 mounted in the recess 52, one or more ceramics are generally provided on the inner peripheral side surface of the frame 53 serving as the inner wall of the recess 52. A device has been devised to increase the concentration of light on the upper surface side by reflecting the light from the light emitting element 51 to the upper surface side by using a green sheet to make the opening on the upper surface side wide or tapered. . Further, Ni plating and Au plating are applied to a conductor pattern using the same metal conductor paste as that for forming the bonding pad 55, the external connection terminal pad 56, etc. on at least the inner peripheral side surface of the frame 53. To improve the light reflection efficiency. Further, in order to improve the light emission efficiency of the light emitting element 51 mounted in the recess 52, the inner peripheral side surface of the frame 53a that is the inner side wall of the recess 52 is usually provided in the light emitting element storage package 50a. In order to increase the concentration of light on the upper surface side, the light from the light emitting element 51 is reflected to the upper surface side in a tapered shape that widens the opening on the upper surface side. Further, Ni plating or Au plating is applied to at least the ring-shaped inner peripheral side surface of the frame 53a to improve the light reflection efficiency.

従来の発光素子収納用パッケージには、発光素子が収納される上面側の全ての導体パターンの最表面の導電体膜に、発光素子からの光の反射効率を上げることができる銀白色系の貴金属めっき被膜を用い、下面側の全ての導体パターンの最表面の導電体膜に、例えば、外部接続端子パッドでボード等に接合するときの半田の濡れ性をよくすることができるＡｕめっき被膜を用いるものが提案されている（例えば、特許文献１参照）。
特開平９−２９３９０４号公報 The conventional light emitting element storage package has a silver-white noble metal capable of increasing the reflection efficiency of light from the light emitting element on the outermost conductive film of all the conductor patterns on the upper surface side where the light emitting element is stored. For example, an Au plating film that can improve solder wettability when bonding to a board or the like with an external connection terminal pad is used for the conductor film on the outermost surface of all the conductor patterns on the lower surface side. The thing is proposed (for example, refer patent document 1).
Japanese Patent Laid-Open No. 9-293904

しかしながら、前述したような従来の発光素子収納用パッケージの製造方法は、次のような問題がある。
（１）発光素子収納用パッケージに収納される発光素子は、発光素子から出る光を反射させる反射効率の向上によって発光効率を向上させることが行われているが、反射効率を向上させるためには、発光素子が搭載されるダイボンドパッドの最表面や、枠体に形成された反射面の最表面に設けられるめっき被膜が有効に作用している。従来、このめっき被膜には、Ａｕめっき被膜が用いられてきたが、Ａｕが他の金属に比べて可視領域において長波長側では反射率を高くすることができるが、低波長側では低いので、特に、青色ＬＥＤのような低波長の発光素子においては反射効率を向上させることができなく、発光効率の低下をきたしていた。これを補うためには、発光素子に供給する電流を多くしていたが、電流供給のための電源装置が大型化したり、多電流で高熱が発生して冷却装置が大型化したりしてコスト高となっていた。 However, the conventional method of manufacturing a light emitting element storage package as described above has the following problems.
(1) A light emitting device housed in a light emitting device housing package has been improved in light emission efficiency by improving reflection efficiency for reflecting light emitted from the light emitting device. The plating film provided on the outermost surface of the die bond pad on which the light emitting element is mounted and the outermost surface of the reflecting surface formed on the frame body are effectively acting. Conventionally, an Au plating film has been used for this plating film, but Au can increase the reflectance on the long wavelength side in the visible region compared to other metals, but is low on the low wavelength side, In particular, in a light emitting element having a low wavelength such as a blue LED, the reflection efficiency cannot be improved, and the light emission efficiency is lowered. In order to compensate for this, the current supplied to the light-emitting elements has been increased, but the power supply for supplying the current has increased in size, or the heat generation has increased due to multiple currents, resulting in an increase in the size of the cooling device. It was.

（２）発光素子から出る光の反射効率の向上には、Ａｇが全波長域において高い反射率を有しているので、めっき被膜をＡｇめっき被膜とすることが有効である。しかしながら、発光素子収納用パッケージの全ての導体パターンの最表面の導電体膜をＡｇめっき被膜で形成すると、外部接続端子パッドのＡｇめっき被膜面は、半田でボード等に接続する時に、Ａｇによる半田喰われが発生し、接続強度に問題が発生する。また、発光素子が搭載される一方の主面の導体パターンの最表面の導電体膜のみをＡｇめっき被膜とするのは、反射効率の向上は期待できるが、電気的導通のあるボンディングパッドには、電圧がかかるので、微細配線ギャップのボンディングパッド間に電界が発生し、Ａｇが湿度による水滴中にイオン化して溶け出し樹枝状結晶として成長（マイグレーション）してショートが発生するという致命的な問題をかかえることになる。
本発明は、かかる事情に鑑みてなされたものであって、発光素子の光の反射効率を向上させることができると同時に、マイグレーションの発生のない、安価な発光素子収納用パッケージの製造方法を提供することを目的とする。 (2) In order to improve the reflection efficiency of light emitted from the light emitting element, it is effective that the plating film is an Ag plating film because Ag has a high reflectance in the entire wavelength region. However, when the outermost conductor film of the conductor pattern of the light emitting element storage package is formed with an Ag plating film, the Ag plating film surface of the external connection terminal pad is soldered with Ag when connected to a board or the like with solder. A bite occurs and a problem occurs in connection strength. In addition, it is expected that only the outermost conductive film of the conductor pattern on one main surface on which the light emitting element is mounted is made of an Ag plating film. This is a fatal problem that an electric field is generated between the bonding pads in the fine wiring gap due to the voltage applied, and the Ag is ionized and dissolved in water droplets due to humidity and grows (migrate) as dendritic crystals. You will have
The present invention was made in view of such circumstances, and at the same time it is possible to improve the reflection efficiency of the light emitting element, without occurrence of migration, an inexpensive light emitting element storage package manufacturing method of The purpose is to provide.

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前記目的に沿う本発明に係る発光素子収納用パッケージの製造方法は、多数個が配列して個々の間にダミー部を設けるシート状のセラミック多層基板の集合体から分割して作製する個々のセラミック多層基板の両主面に導電体膜からなるそれぞれ複数の導体パターンを設け、両主面のうちの一方の主面側に発光素子を収納させるためにセラミック製枠体を積層、又は金属製枠体を接合して凹部を設け、それぞれの導体パターン、及びセラミック製枠体の内周側面又は金属製枠体に電解めっき被膜を備える発光素子収納用パッケージの製造方法において、集合体の個々のセラミック多層基板の両主面のうちの一方の主面側に設けられる導体パターンであって、ワイヤボンド方式又はフリップチップ方式で接続して発光素子と電気的に導通状態とするためのボンディングパッドと、両主面のうちの他方の主面側に設けられ、ボンディングパッドと電気的に導通状態にある外部接続端子パッドとのそれぞれが独立して連通し、ダミー部で１つに結合する電解めっき被膜を形成するための第１のめっき引廻し配線パターンを設ける工程と、セラミック製枠体の内周側面又は金属製枠体とにそれぞれが独立して連通し、ダミー部で第１のめっき引廻し配線パターンと短絡しないようにして１つに結合する電解めっき被膜を形成するための第２のめっき引廻し配線パターンを設ける工程と、集合体の第１のめっき引廻し配線パターン及び／又は第２のめっき引廻し配線パターンを介してめっき浴中で通電し、電解めっき被膜を施す工程を有する。   A method for manufacturing a light-emitting element storage package according to the present invention that meets the above-described object is achieved by dividing individual ceramics from a set of sheet-like ceramic multilayer substrates in which a large number are arranged and dummy portions are provided between the individual ceramics. A plurality of conductor patterns made of conductive films are provided on both main surfaces of the multilayer substrate, and a ceramic frame is laminated or a metal frame to house a light emitting element on one of the main surfaces In the method for manufacturing a package for housing a light-emitting element, in which a body is joined to provide a concave portion, and each conductor pattern and an inner peripheral side surface of a ceramic frame body or a metal frame body is provided with an electrolytic plating film, A conductive pattern provided on one main surface side of both main surfaces of the multilayer substrate, which is electrically connected to the light emitting element by being connected by a wire bond method or a flip chip method. Each of the bonding pads for connection to the other main surface of the two main surfaces and electrically connected to the bonding pads and the external connection terminal pads are independently connected. A dummy part that communicates independently with the step of providing a first plating routing wiring pattern for forming an electrolytic plating film to be bonded to one, and the inner peripheral side of the ceramic frame or the metal frame And a step of providing a second plating routing wiring pattern for forming an electrolytic plating film to be bonded together so as not to be short-circuited with the first plating routing wiring pattern, and a first plating routing of the assembly. There is a step of applying an electrolytic plating film by energizing in the plating bath through the wiring pattern and / or the second plating routing wiring pattern.

ここで、発光素子収納用パッケージの製造方法は、ワイヤボンド方式が用いられる場合には、両主面のうちの一方の主面側の中央部に発光素子を搭載するためのダイボンドパッドが設けられ、ダイボンドパッドに連通し、ダミー部で第１のめっき引廻し配線パターンと短絡しないようにして１つに結合する電解めっき被膜を形成するための第２のめっき引廻し配線パターンを設ける工程を有するのがよい。
また、発光素子収納用パッケージの製造方法は、第１のめっき引廻し配線パターン、及び第２のめっき引廻し配線パターンを介してＡｕめっき浴からなる第１のめっき浴中で通電し、電解Ａｕめっき被膜からなる第１の電解めっき被膜を施した後、第２のめっき引廻し配線パターンを介してＡｇや、Ｐｔ系や、これらの合金からなる貴金属めっき浴からなる第２のめっき浴中で通電し、銀白色系の電解貴金属めっき被膜からなる第２の電解めっき被膜を施すのがよい。 Here, when the wire bonding method is used as the manufacturing method of the light emitting element storage package, a die bond pad for mounting the light emitting element is provided at the center of one main surface side of both main surfaces. And a step of providing a second plating lead wiring pattern for forming an electrolytic plating film that is connected to the die bond pad and is bonded to the first plating lead wiring pattern so as not to be short-circuited at the dummy portion. It is good.
In addition, the method for manufacturing the light-emitting element storage package energizes in the first plating bath composed of the Au plating bath through the first plating routing wiring pattern and the second plating routing wiring pattern, and performs electrolytic Au After the first electrolytic plating film made of the plating film is applied, in the second plating bath made of a noble metal plating bath made of Ag, Pt, or an alloy thereof via the second plating routing wiring pattern. It is preferable to energize and apply a second electrolytic plating film made of a silver white electrolytic noble metal plating film .

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請求項１及びこれに従属する請求項２又は３記載の発光素子収納用パッケージの製造方法は、ボンディングパッドと、これと電気的に導通状態にある外部接続端子パッドとのそれぞれが独立して連通し、多数個のセラミック多層基板が配列する集合体の個々のセラミック多層基板の間に設けるダミー部で１つに結合する第１のめっき引廻し配線パターンを設ける工程と、セラミック製枠体の内周側面又は金属製枠体とにそれぞれが独立して連通し、ダミー部で１つに結合する第２のめっき引廻し配線パターンを設ける工程と、集合体の第１のめっき引廻し配線パターン及び／又は第２のめっき引廻し配線パターンを介してめっき浴中で通電し、電解めっき被膜を施す工程を有するので、第２のめっき引廻し配線パターンで発光素子の光の反射効率を向上させることができる電解めっき被膜が形成でき、第１のめっき引廻し配線パターンでマイグレーションや、半田喰われの発生のない電解めっき被膜が形成できる安価な発光素子収納用パッケージの製造方法を提供することができる。 The process according to claim 1 and a light-emitting element storing package according to claim 2 or 3, wherein dependent on this, communication bonding pads, each of the external connection terminal pads on the electrically conductive state and which is independently A step of providing a first plating routing wiring pattern that is bonded to one by a dummy portion provided between individual ceramic multilayer substrates of an assembly in which a large number of ceramic multilayer substrates are arranged, A step of providing a second plating routing wiring pattern that communicates independently with the peripheral side surface or the metal frame, and is joined to one by a dummy portion; a first plating routing wiring pattern of the assembly; Since there is a step of energizing in the plating bath through the second plating routing wiring pattern and applying an electrolytic plating film, the second plating routing wiring pattern reflects the light of the light emitting element. An inexpensive method for manufacturing a light-emitting element storage package that can form an electrolytic plating film that can improve the rate, and that can form an electrolytic plating film that does not cause migration or solder erosion with the first plating wiring pattern Can be provided.

特に、請求項２記載の発光素子収納用パッケージの製造方法は、ワイヤボンド方式が用いられる場合には、両主面のうちの一方の主面側の中央部に発光素子を搭載するためのダイボンドパッドが設けられ、これに連通し、ダミー部で第１のめっき引廻し配線パターンと短絡しないようにして１つに結合する第２のめっき引廻し配線パターンを設ける工程を有するので、発光素子の反射効率を向上させることができる発光素子収納用パッケージの製造方法を提供することができる。
また、特に、請求項３記載の発光素子収納用パッケージの製造方法は、第１のめっき引廻し配線パターン、及び第２のめっき引廻し配線パターンを介してＡｕめっき浴からなる第１のめっき浴中で通電し、電解Ａｕめっき被膜からなる第１の電解めっき被膜を施した後、第２のめっき引廻し配線パターンを介してＡｇや、Ｐｔ系や、これらの合金からなる貴金属めっき浴からなる第２のめっき浴中で通電し、銀白色系の電解貴金属めっき被膜からなる第２の電解めっき被膜を施すので、容易に第１の電解めっき被膜と第２の電解めっき被膜を形成でき、安価な発光素子収納用パッケージの製造方法を提供することができる。 In particular, in the method for manufacturing a light emitting element storage package according to claim 2 , when a wire bond method is used, a die bond for mounting the light emitting element in the central portion on one main surface side of both main surfaces is used. Since there is a step of providing a second plating routing wiring pattern which is provided with a pad and communicates with the first plating routing wiring pattern so as not to be short-circuited with the first plating routing wiring pattern at the dummy portion. It is possible to provide a method for manufacturing a light emitting element storage package capable of improving the reflection efficiency.
Further, in particular, the method for manufacturing a light emitting element storage package according to claim 3 includes a first plating bath comprising an Au plating bath through a first plating routing wiring pattern and a second plating routing wiring pattern. After applying a first electrolytic plating film consisting of an electrolytic Au plating film, a precious metal plating bath made of Ag, Pt, or an alloy thereof is provided through a second wiring routed wiring pattern. Since electricity is supplied in the second plating bath and the second electrolytic plating film made of the silver-white electrolytic noble metal plating film is applied, the first electrolytic plating film and the second electrolytic plating film can be easily formed at low cost. It is possible to provide a method for manufacturing a light emitting element storage package.

続いて、添付した図面を参照しつつ、本発明を具体化した実施するための最良の形態について説明し、本発明の理解に供する。
ここに、図１（Ａ）、（Ｂ）はそれぞれ本発明の一実施の形態に係る発光素子収納用パッケージの平面図、Ａ−Ａ’線縦断面図、図２（Ａ）、（Ｂ）はそれぞれ同発光素子収納用パッケージの変形例の説明図、図３は同発光素子収納用パッケージの製造方法の説明図である。 Subsequently, the best mode for carrying out the present invention will be described with reference to the accompanying drawings to provide an understanding of the present invention.
1A and 1B are a plan view, a longitudinal sectional view taken along line AA ′, and FIGS. 2A and 2B, respectively, of the light emitting element storage package according to the embodiment of the present invention. FIG. 3 is an explanatory view of a modification of the light emitting element storage package, and FIG. 3 is an explanatory view of a method for manufacturing the light emitting element storage package.

図１（Ａ）、（Ｂ）に示すように、本発明の一実施の形態に係る発光素子収納用パッケージ１０は、平面視して、矩形状や、多角形や、円形等からなるセラミック多層基板１１の両主面のうちの一方の主面側と、リング状の枠体１２とで中心部に発光素子（図示せず）を収納させるための凹部１３を設けて形成されている。セラミック多層基板１１には、アルミナ（Ａｌ２Ｏ３）や、窒化アルミニウム（ＡｌＮ）や、低温焼成セラミック等からなるセラミック基材が用いられている。そして、このセラミック多層基板１１には、両主面のそれぞれに複数層の導電体膜で形成される複数の導体パターンを有している。セラミック多層基板１１の両主面のうちの一方の主面側には、発光素子とボンディングワイヤで接続するワイヤボンド方式、又は、発光素子に設ける接続用バンプで直接接続するフリップチップ方式を用いて電気的に導通状態とするためのボンディングパッド１４となる導体パターンを有している。このボンディングパッド１４、及びセラミック多層基板１１の両主面のうちの他方の主面側の、例えば、外部接続端子パッド１５となる導体パターンには、最表面の導電体膜を第１の電解めっき被膜１６、例えば、電解Ａｕめっき被膜としている。そして、枠体１２は、例えば、ＫＶ（Ｆｅ−Ｎｉ−Ｃｏ系合金、商品名「Ｋｏｖａｒ（コバール）」）や、４２アロイ（Ｆｅ−Ｎｉ系合金）等のセラミックと熱膨張係数の近似する金属からなり、筒状の貫通孔の上面側の開口孔径を大きくするテーパ状にし、内周側面を反射面としている。この枠体１２の少なくとも内周側面には、第１の電解めっき被膜１６と材質を異にする第２の電解めっき被膜１７、例えば、銀白色系の電解貴金属めっき被膜が施されている。 As shown in FIGS. 1A and 1B, a light-emitting element storage package 10 according to an embodiment of the present invention is a ceramic multilayer having a rectangular shape, a polygonal shape, a circular shape, or the like in plan view. A concave portion 13 for accommodating a light emitting element (not shown) is provided in the central portion between one main surface side of both main surfaces of the substrate 11 and the ring-shaped frame body 12. For the ceramic multilayer substrate 11, a ceramic substrate made of alumina (Al 2 O 3 ), aluminum nitride (AlN), low-temperature fired ceramic, or the like is used. The ceramic multilayer substrate 11 has a plurality of conductor patterns formed of a plurality of layers of conductor films on both main surfaces. On one main surface side of the two main surfaces of the ceramic multilayer substrate 11, a wire bonding method in which the light emitting element is connected with a bonding wire or a flip chip method in which a connection bump provided on the light emitting element is directly connected is used. It has a conductor pattern to be a bonding pad 14 for making it electrically conductive. For the conductor pattern to be the external connection terminal pad 15, for example, on the other main surface side of both the main surfaces of the bonding pad 14 and the ceramic multilayer substrate 11, the outermost conductive film is applied to the first electrolytic plating. The coating 16 is, for example, an electrolytic Au plating coating. The frame 12 is, for example, KV (Fe—Ni—Co based alloy, trade name “Kovar”), 42 alloy (Fe—Ni based alloy), or other ceramics whose thermal expansion coefficient approximates. It is made into a taper shape which enlarges the opening hole diameter on the upper surface side of the cylindrical through hole, and the inner peripheral side surface is used as a reflection surface. At least an inner peripheral surface of the frame body 12 is provided with a second electrolytic plating film 17 made of a material different from that of the first electrolytic plating film 16, for example, a silver-white electrolytic noble metal plating film.

図２（Ａ）に示すように、本発明の一実施の形態に係る発光素子収納用パッケージ１０の変形例の発光素子収納用パッケージ１０ａは、発光素子収納用パッケージ１０の場合と同様のセラミック多層基板１１の両主面のうちの一方の主面側に、このセラミック多層基板１１のセラミック基材と同じセラミック基材からなるリング状の枠体１２ａが設けられて形成されている。このセラミック基材からなるリング状の枠体１２ａは、セラミック多層基板作製時に同時に積層されて形成されている。また、この枠体１２ａは、内周側面が垂直や、階段状や、テーパ状等に形成され、少なくともこの内周側面に複数層の導電体膜で形成される導体パターンを有している。この発光素子収納用パッケージ１０ａのボンディングパッド１４、及びセラミック多層基板１１の両主面のうちの他方の主面側の、導体パターンには、発光素子収納用パッケージ１０の場合と同様に、最表面の導電体膜として、第１の電解めっき被膜１６が施されている。そして、枠体１２ａの少なくとも内周側面の導体パターンは、最表面の導電体膜として、第１の電解めっき被膜１６と材質を異にする第２の電解めっき被膜１７が施されている。   As shown in FIG. 2A, a light emitting element storage package 10a of a modification of the light emitting element storage package 10 according to the embodiment of the present invention is a ceramic multilayer similar to the case of the light emitting element storage package 10. On one main surface side of both main surfaces of the substrate 11, a ring-shaped frame body 12 a made of the same ceramic base material as the ceramic base material of the ceramic multilayer substrate 11 is provided and formed. The ring-shaped frame 12a made of the ceramic base material is formed by being laminated at the same time when the ceramic multilayer substrate is manufactured. Further, the frame body 12a is formed such that the inner peripheral side surface is vertical, stepped, tapered or the like, and has a conductor pattern formed of a plurality of layers of conductor films on at least the inner peripheral side surface. As in the case of the light emitting element storage package 10, the outermost surface of the conductor pattern on the other main surface side of both the main surfaces of the bonding pad 14 of the light emitting element storage package 10 a and the ceramic multilayer substrate 11 is used. As a conductive film, a first electrolytic plating film 16 is applied. The conductor pattern on at least the inner peripheral side surface of the frame 12a is provided with a second electrolytic plating film 17 made of a material different from that of the first electrolytic plating film 16 as the outermost conductive film.

図２（Ｂ）に示すように、本発明の一実施の形態に係る発光素子収納用パッケージ１０の他の変形例の発光素子収納用パッケージ１０ｂは、発光素子収納用パッケージ１０ａの形態からなるパッケージの凹部１３に装着される筒体１８を有している。筒体１８は、ＫＶや、４２アロイや、アルミニウム等の金属からなり、内周側面が上面側の開口径を大きくするテーパ状の円錐形状で、上面側周縁にフランジ部を有している。この筒体１８は、フランジ部でセラミック基材からなる枠体１２ａの上端周縁にろう材で接合されている。この発光素子収納用パッケージ１０ｂのボンディングパッド１４、及びセラミック多層基板１１の両主面のうちの他方の主面側の、導体パターンには、発光素子収納用パッケージ１０、１０ａの場合と同様に、最表面の導電体膜として、第１の電解めっき被膜１６が施されている。そして、この枠体１２ｂの少なくとも内周側面である筒体１８の内周側面には、第１の電解めっき被膜１６と材質を異にする第２の電解めっき被膜１７が施されている。   As shown in FIG. 2B, a light emitting element storage package 10b of another modification of the light emitting element storage package 10 according to an embodiment of the present invention is a package having the form of the light emitting element storage package 10a. It has the cylinder 18 with which the recessed part 13 is mounted | worn. The cylinder 18 is made of a metal such as KV, 42 alloy, or aluminum, and has a tapered conical shape whose inner peripheral side surface increases the opening diameter on the upper surface side, and has a flange portion on the upper surface side periphery. The cylindrical body 18 is joined to the upper edge of the frame body 12a made of a ceramic base material with a brazing material at a flange portion. As in the case of the light emitting element storage packages 10 and 10a, the conductive pattern on the other main surface side of both the main surfaces of the bonding pad 14 and the ceramic multilayer substrate 11 of the light emitting element storage package 10b is as follows. A first electrolytic plating film 16 is applied as the outermost conductive film. A second electrolytic plating film 17 made of a material different from that of the first electrolytic plating film 16 is applied to at least the inner peripheral side surface of the cylindrical body 18 which is the inner peripheral side surface of the frame body 12b.

発光素子がワイヤボンド方式で接続される場合の発光素子収納用パッケージ１０、１０ａ、１０ｂは、セラミック多層基板１１の両主面のうちの一方の主面側の中央部に設けられる発光素子を搭載するためのダイボンドパッド１９の最表面の導電体膜が第２の電解めっき被膜１７であるのがよい。例えば、第２の電解めっき被膜１７が銀白色系の電解貴金属めっき被膜のような光の反射効率を促進できるものであると、発光素子の発光効率を向上させることができる。   When the light emitting elements are connected by the wire bond method, the light emitting element storage packages 10, 10 a, and 10 b are mounted with the light emitting elements provided at the central portion on one main surface side of both main surfaces of the ceramic multilayer substrate 11. It is preferable that the conductive film on the outermost surface of the die bond pad 19 to be the second electrolytic plating film 17. For example, when the second electrolytic plating film 17 can promote the light reflection efficiency like the silver white electrolytic noble metal plating film, the light emission efficiency of the light emitting element can be improved.

発光素子収納用パッケージ１０、１０ａ、１０ｂの第１の電解めっき被膜１６は、パッケージをＡｕめっき浴に浸漬し、電気的通電を行って形成される電解Ａｕめっき被膜からなるのがよい。また、第２の電解めっき被膜１７は、パッケージをＡｇや、Ｐｔ系や、これらの合金からなる貴金属めっき浴に浸漬し、電気的通電を行って形成される銀白色系の電解貴金属めっき被膜からなるのがよい。Ａｕめっき被膜面は、ワイヤボンド方式又はフリップチップ方式で接続して発光素子と電気的に導通状態とするためのボンディングパッドにマイグレーションを発生させることなく、接続信頼性を高くすることができる。また、外部接続端子パッドに半田喰われを発生させることなく、外部接続端子との接続信頼性を高くすることができる。銀白色系の貴金属めっき被膜面は、発光素子からの光の反射効率を高めることができ、発光素子の発光効率を向上させることができる。   The first electrolytic plating film 16 of the light emitting element storage package 10, 10a, 10b is preferably made of an electrolytic Au plating film formed by immersing the package in an Au plating bath and conducting electrical conduction. The second electrolytic plating film 17 is made of a silver white electrolytic noble metal plating film formed by immersing the package in a noble metal plating bath made of Ag, Pt, or an alloy thereof and conducting electrical conduction. It should be. The Au plating film surface can be connected with a wire bond method or a flip chip method, and connection reliability can be increased without causing migration in a bonding pad for electrical connection with a light emitting element. Further, the reliability of connection with the external connection terminal can be increased without causing the external connection terminal pad to be eroded by solder. The silver-white noble metal plating film surface can improve the reflection efficiency of light from the light emitting element, and can improve the light emission efficiency of the light emitting element.

発光素子収納用パッケージ１０、１０ａ、１０ｂの電解貴金属めっき被膜の下層には、電解Ａｕめっき被膜を有するのがよい。Ａｕめっき被膜層は、電気的通電の速度が早いので、銀白色系の貴金属めっき被膜形成時のめっき浴中の浸漬時間を短くでき、電気的通電を行っていないのＡｕめっき被膜面への無電解めっき的な貴金属めっき被膜の形成を防止することができる。   It is preferable to have an electrolytic Au plating film below the electrolytic precious metal plating film of the light emitting element storage package 10, 10a, 10b. Since the Au plating film layer has a high electrical energization speed, the immersion time in the plating bath at the time of forming the silver-white noble metal plating film can be shortened. Formation of a noble metal plating film like an electrolytic plating can be prevented.

次いで、図３を参照しながら発光素子収納用パッケージ１０、１０ａ、１０ｂ（以下、代表して１０と記す）の製造方法を説明する。
図３に示すように、発光素子収納用パッケージ１０は、多数個が配列して個々の間にダミー部２０を設けるシート状のセラミック多層基板１１の集合体２１と、枠体１２、１２ａ、１２ｂ（以下、代表して１２と記す）とで個々に凹部１３を設け、電解めっき被膜を形成した後、分割線２２で個々に分割して作製している。このシート状のセラミック多層基板１１の集合体２１は、アルミナや、窒化アルミニウムや、低温焼成セラミック等のセラミック基材を用いたセラミックグリーンシートに導体パターンを形成して作製されている。セラミックグリーンシートは、例えば、アルミナからなる場合には、先ず、アルミナ粉末にマグネシア、シリカ、カルシア等の焼結助剤を適当量加えた粉末に、ジオクチルフタレート等の可塑剤と、アクリル樹脂等のバインダー、及びトルエン、キシレン、アルコール類等の溶剤を加え、十分に混練した後、脱泡して粘度２０００〜４００００ｃｐｓのスラリーを準備している。次いで、スラリーは、ドクターブレード法等によって、例えば、厚さ０．２ｍｍ程度のロール状のシートに形成し、適当なサイズにカットしてセラミックグリーンシートが作製されている。 Next, a method for manufacturing the light emitting element storage packages 10, 10 a, 10 b (hereinafter, representatively referred to as 10) will be described with reference to FIG. 3.
As shown in FIG. 3, the light-emitting element storage package 10 includes a group 21 of sheet-like ceramic multilayer substrates 11 in which a large number are arranged and a dummy portion 20 is provided between each, and frames 12, 12a, 12b. (Hereinafter, represented by 12 as a representative), the recesses 13 are individually provided, and an electrolytic plating film is formed. The assembly 21 of the sheet-like ceramic multilayer substrate 11 is produced by forming a conductor pattern on a ceramic green sheet using a ceramic base material such as alumina, aluminum nitride, or low-temperature fired ceramic. When the ceramic green sheet is made of alumina, for example, first, a powder obtained by adding an appropriate amount of a sintering aid such as magnesia, silica, calcia to alumina powder, a plasticizer such as dioctyl phthalate, an acrylic resin, etc. A binder and a solvent such as toluene, xylene, and alcohols are added and kneaded sufficiently, and then defoamed to prepare a slurry having a viscosity of 2000 to 40000 cps. Next, the slurry is formed into a roll sheet having a thickness of, for example, about 0.2 mm by a doctor blade method or the like, and cut into an appropriate size to produce a ceramic green sheet.

セラミックグリーンシートには、打ち抜き金型や、パンチィングマシーン等を用いて、それぞれの所定位置に上、下層の間の導通を形成するためのビア（図示せず）や、キャスタレーション２３用の貫通孔が穿設される。次に、セラミック多層基板１１となる複数のセラミックグリーンシートには、タングステンや、モリブデン等のセラミックと同時焼成できる高融点金属からなる金属導体ペースト用いて、スクリーン印刷でビア用の孔に充填したり、キャスタレーション２３用の孔壁に塗布したり、高融点金属の導電体膜からなる複数の導体パターン等を形成している。これらの印刷が完了したセラミックグリーンシートは、複数枚が重ね合わされ温度と圧力をかけて接着し積層体が形成される。そして、セラミックグリーンシートと高融点金属は、還元性雰囲気の焼成炉で同時焼成してセラミック多層基板１１の集合体２１を作製している。なお、セラミック多層基板１１の両主面のうちの一方の主面側に発光素子を収納するための凹部１３を設けるのにセラミック製の枠体１２ａで形成する場合には、セラミックグリーンシートに凹部１３部分となる垂直や、テーパ状の打ち抜き孔の壁面である内周側面に金属導体ペーストを塗布した後、セラミック多層基板１１となる部分のセラミックグリーンシートと、枠体１２ａの部分のセラミックグリーンシートも含めて積層され、焼成してセラミック多層基板１１の集合体２１を作製している。また、セラミック多層基板１１の両主面のうちの一方の主面側に発光素子を収納するための凹部１３を設けるのに金属製の枠体１２で形成する場合には、焼成済みのセラミック多層基板１１の集合体２１の個々のセラミック多層基板１１に金属製の枠体１２を接合用の導体パターンにＡｇＣｕろうでろう付け接合して形成している。   For the ceramic green sheet, a punching die, a punching machine, or the like is used, vias (not shown) for forming conduction between the upper and lower layers at respective predetermined positions, and penetrations for the castellation 23 A hole is drilled. Next, a plurality of ceramic green sheets to be the ceramic multilayer substrate 11 are filled in via holes by screen printing using a metal conductor paste made of a refractory metal that can be fired simultaneously with a ceramic such as tungsten or molybdenum. Then, it is applied to the hole wall for the castellation 23, or a plurality of conductor patterns made of a conductive film of a refractory metal are formed. A plurality of ceramic green sheets on which these printings have been completed are stacked and bonded together by applying temperature and pressure to form a laminate. The ceramic green sheet and the refractory metal are simultaneously fired in a firing furnace in a reducing atmosphere to produce an aggregate 21 of the ceramic multilayer substrate 11. In the case where the concave portion 13 for accommodating the light emitting element is provided on one main surface side of the two main surfaces of the ceramic multilayer substrate 11, when the ceramic frame 12a is used, the concave portion is formed on the ceramic green sheet. After a metal conductor paste is applied to the inner peripheral side surface that is the wall of the vertical or tapered punching hole that becomes 13 portions, the ceramic green sheet that becomes the ceramic multilayer substrate 11 and the ceramic green sheet that becomes the frame 12a In addition, the aggregate 21 of the ceramic multilayer substrate 11 is manufactured by firing. In the case of forming the recess 13 for housing the light emitting element on one of the main surfaces of the ceramic multilayer substrate 11 with the metal frame 12, the sintered ceramic multilayer is used. A metal frame 12 is formed on each ceramic multilayer substrate 11 of the aggregate 21 of the substrates 11 by brazing and bonding to a conductor pattern for bonding with AgCu solder.

ここで、セラミックグリーンシートに設けられる導体パターンには、個々のセラミック多層基板１１の両主面のうちの一方の主面側に設けられる導体パターンであって、ワイヤボンド方式又はフリップチップ方式で接続して発光素子と電気的に導通状態とすためのボンディングパッド１４がある。また、セラミックグリーンシートに設けられる導体パターンには、個々のセラミック多層基板１１の両主面のうちの他方の主面側に設けられる導体パターンであって、ボンディングパッド１４と電気的に導通状態にある外部接続端子パッド１５がある。そして、集合体２１には、このボンディングパッド１４と、外部接続端子パッド１５とのそれぞれが独立して連通し、ダミー部２０で１つに結合する電解めっき被膜を形成するための第１のめっき引廻し配線パターン２４の導体パターンを設けている。   Here, the conductor pattern provided on the ceramic green sheet is a conductor pattern provided on one main surface side of both main surfaces of each ceramic multilayer substrate 11, and is connected by a wire bond method or a flip chip method. Thus, there is a bonding pad 14 for electrically connecting the light emitting element. Further, the conductor pattern provided on the ceramic green sheet is a conductor pattern provided on the other main surface side of both main surfaces of each ceramic multilayer substrate 11, and is electrically connected to the bonding pad 14. There is an external connection terminal pad 15. The assembly 21 is connected to the bonding pads 14 and the external connection terminal pads 15 independently, and a first plating for forming an electroplating film that is bonded to one at the dummy portion 20. A conductor pattern of the routing wiring pattern 24 is provided.

また、集合体２１には、金属製枠体１２や、セラミック製枠体１２ａの内周側面の導体パターンや、、又はセラミック製枠体１２ａと金属製筒体１８を接合して形成した枠体１２ｂの筒体１８とにそれぞれが独立して連通し、第１のめっき引廻し配線パターン２４と短絡しないようににして１つに結合する電解めっき被膜を形成するための第２のめっき引廻し配線パターン２５の導体パターンを設けている。   The aggregate 21 is formed by joining the metal frame 12, the conductor pattern on the inner peripheral side surface of the ceramic frame 12a, or the ceramic frame 12a and the metal cylinder 18 joined together. The second plating route for forming an electrolytic plating film which is in communication with the cylindrical body 18b of 12b independently and bonded together so as not to be short-circuited with the first plating route 24. A conductor pattern of the wiring pattern 25 is provided.

次いで、集合体２１のそれぞれの発光素子収納用パッケージ１０には、第１のめっき引廻し配線パターン２４及び／又は第２のめっき引廻し配線パターン２５を介してめっき浴中で通電し、それぞれの高融点金属の導電体膜上に電解めっき被膜からなる導電体膜を形成し、複数層の導電体膜からなる導体パターンを形成している。   Next, each light emitting element storage package 10 of the assembly 21 is energized in a plating bath via the first plating routing wiring pattern 24 and / or the second plating routing wiring pattern 25, and A conductor film made of an electrolytic plating film is formed on a refractory metal conductor film to form a conductor pattern made of a plurality of layers of conductor films.

ここで、発光素子がワイヤボンド方式で実装される場合には、ボンディングパッド１４の導体パターンが設けられる主面側の中央部に発光素子を搭載するためのダイボンドパッド１９の導体パターンを設け、このダイボンドパッド１９の導体パターンに連通し、ダミー部２０で第１のめっき引廻し配線パターン２４と短絡しないようにして１つに結合する電解めっき被膜を形成するための第２のめっき引廻し配線パターン２５をを設けるのがよい。   Here, when the light emitting element is mounted by the wire bond method, a conductor pattern of the die bond pad 19 for mounting the light emitting element is provided in the central portion on the main surface side where the conductor pattern of the bonding pad 14 is provided. A second plating lead wiring pattern for forming an electrolytic plating film that is connected to the conductor pattern of the die bond pad 19 and bonded to the first plating lead wiring pattern 24 at the dummy portion 20 so as not to be short-circuited. 25 may be provided.

また、電解めっき被膜を形成するには、先ず、第１のめっき引廻し配線パターン２４、及び第２のめっき引廻し配線パターン２５を介して第１のめっき浴、例えば、Ａｕめっき浴中で通電し、第１の電解めっき被膜１６、例えば、電解Ａｕめっき被膜を施すのがよい。そして、第１の電解めっき被膜１６を施した後、第２のめっき引廻し配線パターン２５を介して第２のめっき浴、例えば、Ａｇや、Ｐｔ系や、これらの合金からなる貴金属めっき浴中で通電し、第２の電解めっき被膜１７、例えば、銀白色系の電解貴金属めっき被膜を施すのがよい。   In order to form an electrolytic plating film, first, a current is passed in a first plating bath, for example, an Au plating bath, through the first plating routing wiring pattern 24 and the second plating routing wiring pattern 25. The first electrolytic plating film 16, for example, an electrolytic Au plating film is preferably applied. Then, after the first electrolytic plating film 16 is applied, the second plating bath, for example, a noble metal plating bath made of Ag, Pt, or an alloy thereof is provided via the second plating routing wiring pattern 25. The second electrolytic plating film 17, for example, a silver-white electrolytic noble metal plating film is preferably applied.

本発明の発光素子収納用パッケージは、ＬＥＤ等の発光素子を搭載させて照明や、ディスプレイ等に用いることができる。また、発光素子収納用パッケージの製造方法は、電子部品を搭載するためのパッケージにおいて、１つのパッケージの中で目的の異なる電解めっき被膜を必要とする場合の全てのパッケージの製造方法にも適用することができる。   The light emitting element storage package of the present invention can be used for illumination, a display, or the like by mounting a light emitting element such as an LED. Moreover, the manufacturing method of the light emitting element storage package is also applied to the manufacturing method of all packages in the case where an electrolytic plating film having a different purpose is required in one package in a package for mounting electronic components. be able to.

（Ａ）、（Ｂ）はそれぞれ本発明の一実施の形態に係る発光素子収納用パッケージの平面図、Ａ−Ａ’線縦断面図である。(A), (B) is a top view of the light emitting element storage package which concerns on one embodiment of this invention, respectively, and an A-A 'line longitudinal cross-sectional view. （Ａ）、（Ｂ）はそれぞれ同発光素子収納用パッケージの変形例の説明図である。(A), (B) is explanatory drawing of the modification of the package for the said light emitting element accommodation, respectively. 同発光素子収納用パッケージの製造方法の説明図である。It is explanatory drawing of the manufacturing method of the package for the said light emitting element accommodation. （Ａ）、（Ｂ）はそれぞれ従来の光素子収納用パッケージの説明図である。(A), (B) is explanatory drawing of the conventional package for optical element accommodation, respectively.

１０、１０ａ、１０ｂ：発光素子収納用パッケージ、１１：セラミック多層基板、１２、１２ａ、１２ｂ：枠体、１３：凹部、１４：ボンディングパッド、１５：外部接続端子パッド、１６：第１の電解めっき被膜、１７：第２の電解めっき被膜、１８：筒体、１９：ダイボンドパッド、２０：ダミー部、２１：集合体、２２：分割線、２３：キャスタレーション、２４：第１のめっき引廻し配線パターン、２５：第２のめっき引廻し配線パターン   10, 10a, 10b: Light emitting element storage package, 11: Ceramic multilayer substrate, 12, 12a, 12b: Frame, 13: Recess, 14: Bonding pad, 15: External connection terminal pad, 16: First electrolytic plating Coating: 17: Second electrolytic plating coating, 18: Cylindrical body, 19: Die bond pad, 20: Dummy part, 21: Assembly, 22: Dividing line, 23: Castellation, 24: First plating routing wiring Pattern 25: Second plating routing wiring pattern

Claims (3)

多数個が配列して個々の間にダミー部を設けるシート状のセラミック多層基板の集合体から分割して作製する個々のセラミック多層基板の両主面に導電体膜からなるそれぞれ複数の導体パターンを設け、前記両主面のうちの一方の主面側に発光素子を収納させるためにセラミック製枠体を積層、又は金属製枠体を接合して凹部を設け、それぞれの前記導体パターン、及び前記セラミック製枠体の内周側面又は前記金属製枠体に電解めっき被膜を備える発光素子収納用パッケージの製造方法において、
前記集合体の個々の前記セラミック多層基板の前記両主面のうちの一方の主面側に設けられる前記導体パターンであって、ワイヤボンド方式又はフリップチップ方式で接続して前記発光素子と電気的に導通状態とするためのボンディングパッドと、前記両主面のうちの他方の主面側に設けられ、前記ボンディングパッドと電気的に導通状態にある外部接続端子パッドとのそれぞれが独立して連通し、前記ダミー部で１つに結合する前記電解めっき被膜を形成するための第１のめっき引廻し配線パターンを設ける工程と、
前記セラミック製枠体の内周側面又は前記金属製枠体とにそれぞれが独立して連通し、前記ダミー部で前記第１のめっき引廻し配線パターンと短絡しないようにして１つに結合する前記電解めっき被膜を形成するための第２のめっき引廻し配線パターンを設ける工程と、
前記集合体の前記第１のめっき引廻し配線パターン及び／又は前記第２のめっき引廻し配線パターンを介してめっき浴中で通電し、前記電解めっき被膜を施す工程を有することを特徴とする発光素子収納用パッケージの製造方法。 A plurality of conductor patterns each made of a conductive film are formed on both main surfaces of each ceramic multilayer substrate produced by dividing from an assembly of sheet-like ceramic multilayer substrates in which a large number are arranged and dummy portions are provided between them. Providing a concave portion by laminating a ceramic frame body or joining a metal frame body in order to accommodate a light emitting element on one main surface side of the two main surfaces, and each of the conductor patterns, and the In the manufacturing method of the light emitting element storage package provided with the electrolytic plating film on the inner peripheral side surface of the ceramic frame or the metal frame,
The conductor pattern provided on one main surface side of the two main surfaces of each ceramic multilayer substrate of the aggregate, and is electrically connected to the light emitting element by being connected by a wire bond method or a flip chip method. A bonding pad for establishing a conductive state and an external connection terminal pad provided on the other main surface side of the two main surfaces and electrically connected to the bonding pad independently. And providing a first plating routing wiring pattern for forming the electrolytic plating film bonded to one at the dummy portion;
The ceramic frame body is connected to the inner peripheral side surface of the ceramic frame body or the metal frame body independently of each other, and the dummy portion is connected to the first plating routing wiring pattern so as not to be short-circuited. Providing a second plating routing wiring pattern for forming an electrolytic plating film;
Light emission comprising a step of applying the electrolytic plating film by energizing a plating bath through the first plating routing wiring pattern and / or the second plating routing wiring pattern of the aggregate. A method for manufacturing an element storage package. 請求項１記載の発光素子収納用パッケージの製造方法において、前記ワイヤボンド方式が用いられる場合には、前記両主面のうちの一方の主面側の中央部に前記発光素子を搭載するためのダイボンドパッドが設けられ、該ダイボンドパッドに連通し、前記ダミー部で前記第１のめっき引廻し配線パターンと短絡しないようにして１つに結合する前記電解めっき被膜を形成するための第２のめっき引廻し配線パターンを設ける工程を有することを特徴とする発光素子収納用パッケージの製造方法。 The method for manufacturing a light emitting element storage package according to claim 1 , wherein when the wire bond method is used, the light emitting element is mounted on a central portion on one main surface side of the two main surfaces. A second plating for forming the electrolytic plating film which is provided with a die bond pad and is connected to the die bond pad so as not to be short-circuited with the first plating routing wiring pattern at the dummy portion. A method for manufacturing a package for housing a light-emitting element, comprising a step of providing a lead wiring pattern. 請求項１又は２記載の発光素子収納用パッケージの製造方法において、前記第１のめっき引廻し配線パターン、及び前記第２のめっき引廻し配線パターンを介してＡｕめっき浴からなる第１のめっき浴中で通電し、電解Ａｕめっき被膜からなる第１の電解めっき被膜を施した後、前記第２のめっき引廻し配線パターンを介してＡｇや、Ｐｔ系や、これらの合金からなる貴金属めっき浴からなる第２のめっき浴中で通電し、銀白色系の電解貴金属めっき被膜からなる第２の電解めっき被膜を施すことを特徴とする発光素子収納用パッケージの製造方法。 The method of manufacturing a package for housing a light-emitting element according to claim 1 or 2, wherein said first plating lead-wiring pattern, and a first plating bath consisting of Au plating bath through the second plating lead-wiring pattern After applying a first electrolytic plating film made of an electrolytic Au plating film, the Ag, Pt series, or a noble metal plating bath made of an alloy thereof is passed through the second plating routing wiring pattern. A method for producing a package for storing a light-emitting element, comprising energizing a second plating bath and applying a second electrolytic plating film made of a silver-white electrolytic noble metal plating film .
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JP4582786B2 (en) * 2005-06-16 2010-11-17 ニチコン株式会社 Light source device
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