JP5613308B2 - White curable composition for optical semiconductor device, molded article for optical semiconductor device, and optical semiconductor device - Google Patents

Description

  The present invention relates to a white curable composition for an optical semiconductor device that is used to obtain a molded body having a frame portion that is disposed on the side of an optical semiconductor element in an optical semiconductor device. Moreover, this invention relates to the molded object for optical semiconductor devices and optical semiconductor device which used the said white curable composition for optical semiconductor devices.

  An optical semiconductor device such as a light emitting diode (LED) device has low power consumption and long life. Moreover, the optical semiconductor device can be used even in a harsh environment. Accordingly, optical semiconductor devices are used in a wide range of applications such as mobile phone backlights, liquid crystal television backlights, automobile lamps, lighting fixtures, and signboards.

  When an optical semiconductor element (for example, an LED), which is a light emitting element used in an optical semiconductor device, is in direct contact with the atmosphere, the light emission characteristics of the optical semiconductor element rapidly deteriorate due to moisture in the atmosphere or floating dust. For this reason, the said optical semiconductor element is normally sealed with the sealing compound for optical semiconductor devices. In order to fill the sealant, a molded body having a frame portion is disposed on a lead frame on which the optical semiconductor element is mounted. The sealing agent is filled inside the molded body having the frame portion. The molded body may be called a reflector, a case material, or a housing.

  When the molding material is molded to obtain the molded body, it is usually molded continuously under heat and pressure by a compression molding method, a transfer molding method or an injection molding method using a mold. When the molding material is continuously molded, the releasability of the obtained molded body from the mold significantly affects the productivity. Conventionally, a mold release agent is often used as a molding material in order to improve mold release properties from a mold.

  In the following Patent Document 1, (A) a specific reaction product of a triazine derivative epoxy resin and an acid anhydride, (B) a specific glycerin-type internal mold release agent, (C) a reflecting member, and (D ) A molding material containing an inorganic filler is disclosed.

  Patent Document 2 below includes (A) an epoxy resin, (B) a curing agent, (C) a curing catalyst, (D) an inorganic filler, (E) a white pigment, and (F) an additive. , (G) a molding material containing a release agent is disclosed. In this molding material, the number of shots that can be continuously molded by the transfer molding method is 100 times or more.

JP 2008-192888 A JP 2009-097005 A

  When the conventional molding materials as described in Patent Documents 1 and 2 are continuously molded, the mold release agent contained in the molding material increases the mold releasability from the mold, and the continuous moldability. Becomes higher. However, as a result of the mold release agent contained in the molding material being also contained in the molded body, the adhesion of the molded body to the contact object is deteriorated. In particular, when the molded body is disposed on the lead frame, there is a problem that the adhesion between the molded body and the lead frame is deteriorated, and the molded body and the lead frame are easily peeled off.

  An object of the present invention is to provide a white curable composition for an optical semiconductor device capable of enhancing the adhesion of a molded body to an adhesion target such as a lead frame, and an optical semiconductor using the white curable composition for an optical semiconductor device. It is providing the molded object for apparatuses and an optical semiconductor device.

  According to a wide aspect of the present invention, there is provided a white curable composition for an optical semiconductor device, which is used to obtain a molded body having a frame portion disposed on a side of an optical semiconductor element in an optical semiconductor device and is white. And includes an epoxy compound, an acid anhydride curing agent, a white pigment, a filler other than the white pigment, and a curing accelerator. In differential scanning calorimetry, the calorific value from the start of curing to the completion of curing is 20 J. / G or more and 100 J / g or less The white curable composition for optical semiconductor devices is provided.

  In a specific aspect of the white curable composition for an optical semiconductor device according to the present invention, the melt viscosity at 180 ° C. is less than 100 Pa · s.

  On the specific situation with the white curable composition for optical semiconductor devices which concerns on this invention, the epoxy equivalent of the said epoxy compound is 300 or less.

  The white pigment is preferably titanium oxide, zinc oxide or zirconium oxide. It is preferable that the filler contains silica. It is preferable that the white pigment is titanium oxide, zinc oxide, or zirconium oxide, and the filler contains silica.

  On the specific situation of the white curable composition for optical semiconductor devices which concerns on this invention, this white curable composition for optical semiconductor devices does not contain a mold release agent, or further contains a mold release agent, and is an optical semiconductor. Content of the said mold release agent in 100 weight% of white curable compositions for apparatuses is 2 weight% or less.

  On the specific situation with the white curable composition for optical semiconductor devices which concerns on this invention, this white curable composition for optical semiconductor devices further contains a mold release agent.

  The white curable composition for optical semiconductor devices according to the present invention is suitably used for obtaining a molded body disposed on a lead frame on which an optical semiconductor element is mounted in an optical semiconductor device.

  The white curable composition for optical semiconductor devices according to the present invention is suitable for obtaining individual molded bodies by dividing the pre-divided molded body after obtaining a molded body before division in which a plurality of molded bodies are continuous. Used.

  According to a wide aspect of the present invention, a molded body having a frame portion disposed on the side of an optical semiconductor element in an optical semiconductor device, which is obtained by curing the above-described white curable composition for an optical semiconductor device. An optical semiconductor device molded body is provided.

  According to a wide aspect of the present invention, a lead frame, an optical semiconductor element mounted on the lead frame, and a frame disposed on the lead frame and disposed on a side of the optical semiconductor element. There is provided an optical semiconductor device that is obtained by curing the white curable composition for an optical semiconductor device described above.

  The white curable composition for optical semiconductor devices according to the present invention includes an epoxy compound, an acid anhydride curing agent, a white pigment, a filler other than the white pigment, and a curing accelerator, and further includes differential scanning calorimetry. , Since the amount of heat generated from the start of curing to the completion of curing is 20 J / g or more and 100 J / g or less, it is possible to improve the adhesion of the molded body to a close object such as a lead frame.

1A and 1B are a cross-sectional view and a perspective view schematically showing an example of an optical semiconductor device including a molded body using a white curable composition for an optical semiconductor device according to an embodiment of the present invention. It is. FIG. 2 is a cross-sectional view schematically showing a modification of the optical semiconductor device shown in FIG. FIG. 3 schematically illustrates an example of a pre-division optical semiconductor device component including a pre-division molded body in which a plurality of molded bodies using a white curable composition for an optical semiconductor device according to an embodiment of the present invention are connected. It is sectional drawing shown. FIG. 4 is a cross-sectional view schematically illustrating an example of a pre-division optical semiconductor device including a pre-division molded body in which a plurality of molded bodies using a white curable composition for an optical semiconductor device according to an embodiment of the present invention are connected. FIG.

  Hereinafter, the present invention will be described in detail.

(White curable composition for optical semiconductor devices)
The white curable composition for optical semiconductor devices which concerns on this invention is used in order to obtain the molded object which has a frame part arrange | positioned at the side of an optical semiconductor element in an optical semiconductor device. The white curable composition for optical semiconductor devices according to the present invention is white. The white curable composition for optical semiconductor devices according to the present invention includes an epoxy compound (A), a curing agent (B), a white pigment (C), a filler (D) other than a white pigment, and a curing accelerator. (E). In the white curable composition for optical semiconductor devices according to the present invention, the curing agent (B) is an acid anhydride curing agent.

  Furthermore, in the white curable composition for optical semiconductor devices according to the present invention, in the differential scanning calorimetry, the calorific value from the start of curing to the completion of curing is 20 J / g or more and 100 J / g or less.

  By adopting the above composition in the white curable composition for optical semiconductor devices according to the present invention, the amount of heat generated from the start of curing to the completion of curing is equal to or more than the above lower limit, so that molding on an adhesion target object such as a lead frame is performed. The adhesion of the body can be improved. In particular, the adhesiveness of the molded body with respect to the adhesion target object which has the surface of silver plating and copper becomes high. Further, for example, when a molded body obtained by molding the white curable composition for optical semiconductor devices according to the present invention is disposed on the lead frame, the adhesion between the lead frame and the molded body is increased. As a result, peeling between the lead frame and the molded body can be suppressed. Furthermore, the molded body can be molded into a predetermined shape, and unintended deformation of the molded body can be suppressed. For example, the bending of the molded body can be suppressed.

  In addition, even if the said calorific value exceeds 100 J / g, although the adhesiveness of the molded object with respect to close_contact | adherence objects, such as a lead frame, can be improved, from the viewpoint of suppressing the deformation | transformation of the molded object by hardening shrinkage, the said calorific value is 100 J / g or less.

  Further, in order to obtain a plurality of optical semiconductor devices, a molded body is disposed on a pre-division lead frame that is later divided into a plurality of lead frames, and then the pre-division lead frame is divided to obtain a plurality of optical semiconductor devices. May get. Furthermore, in order to obtain a plurality of optical semiconductor devices, a pre-division molded body that is later divided into a plurality of molded bodies is arranged on a lead frame, and then the pre-division molded body is divided to obtain a plurality of optical semiconductor devices. May get.

  By using the white curable composition for an optical semiconductor device according to the present invention, when the lead frame before division and the molded body before division are divided, it is possible to effectively suppress peeling of the molded body from the lead frame. In the present invention, for example, after molding the white curable composition for optical semiconductor devices according to the present invention, when the LED package including the molded body is separated from the runner portion, the molded body is the lead frame. It becomes difficult to peel off from etc.

  Further, by using the white curable composition for an optical semiconductor device according to the present invention, the adhesion of the molded body to the adhesion target object can be enhanced with respect to the adhesion target object other than the lead frame. Examples of the contact object other than the lead frame include a sealant.

  Furthermore, by using the white curable composition for optical semiconductor devices according to the present invention, the continuous moldability can be improved when a plurality of molded articles are continuously molded. That is, even if a plurality of molded bodies are continuously molded, the molded body is hardly chipped and molding abnormalities such as welds are less likely to occur.

  The calorific value can be determined by measuring the calorific value from the start of curing to the completion of curing of the white curable composition for optical semiconductor devices by DSC (differential scanning calorimetry). When performing the DSC, for example, “EXSTAR DSC7020” manufactured by AI Nano Technology, etc. is used. The curing start temperature is generally 50 ° C. or higher. Therefore, in the DSC, it can be obtained by measuring the heat generation amount (total heat generation amount) from room temperature (23 ° C.) until the curing is completed at a heating rate of 10 ° C./min. In the DSC, when the temperature and the heat flow are plotted, it is determined that the curing starts when the heat flow starts to rise from the baseline, and when the heat flow decreases and reaches the baseline, it is determined that the curing is completed.

  As a method for controlling the calorific value, a method for controlling the equivalent ratio of the epoxy compound (A) and the curing agent (B), a method for controlling the amount of the white pigment (C), and other than the white pigment And a method for controlling the blending amount of the filler (D) and a method for controlling the blending amount of the curing accelerator (E).

  From the viewpoint of further improving the moldability, the melt viscosity at 180 ° C. of the white curable composition for optical semiconductor devices is preferably 200 Pa · s or less, more preferably less than 100 Pa · s. The lower limit of the melt viscosity is not particularly limited. From the viewpoint of suppressing excessive flow, the melt viscosity at 180 ° C. of the white curable composition for optical semiconductor devices is preferably 3 Pa · s or more, more preferably 5 Pa · s or more.

  For example, an elevated flow tester manufactured by Shimadzu Corporation is used for the measurement of the melt viscosity. The measurement conditions are a temperature of 180 ° C., a load of 20 kgf, a die hole diameter of 1 mm, and a die length of 1 mm.

  Hereinafter, the detail of each component contained in the white curable composition for optical semiconductor devices which concerns on this invention is demonstrated.

[Epoxy compound (A)]
The said curable composition contains the said epoxy compound (A) so that it can harden | cure by provision of a heat | fever. The epoxy compound (A) has an epoxy group. By using the said epoxy compound (A) as a thermosetting compound, the heat resistance and insulation reliability of a molded object become high. As for the said epoxy compound (A), only 1 type may be used and 2 or more types may be used together.

  Specific examples of the epoxy compound (A) include bisphenol type epoxy compounds, novolak type epoxy compounds, glycidyl ester type epoxy compounds obtained by reacting polychloric acid compounds with epichlorohydrin, polyamine compounds and epichlorohydrides. Glycidylamine type epoxy compounds, glycidyl ether type epoxy compounds, aliphatic epoxy compounds, hydrogenated aromatic epoxy compounds, epoxy compounds having an alicyclic skeleton, and heterocyclic epoxy compounds obtained by reacting with phosphorus Can be mentioned. Examples of the polychloric acid compound include phthalic acid and dimer acid. Examples of the polyamine compound include diaminodiphenylmethane and isocyanuric acid.

  Examples of the bisphenol type epoxy compound include bisphenol A type epoxy compounds, bisphenol F type epoxy compounds, bisphenol S type epoxy compounds, and diglycidyl ethers such as alkyl-substituted bisphenols. As said novolak-type epoxy compound, a phenol novolak-type epoxy compound, an ortho cresol novolak-type epoxy compound, etc. are mentioned. Examples of the heterocyclic epoxy compound include diglycidyl isocyanurate and triglycidyl isocyanurate.

  The epoxy compound (A) is preferably colorless or has a color close to colorless. Therefore, the epoxy compound (A) is preferably a bisphenol A type epoxy compound, a bisphenol F type epoxy compound, a bisphenol S type epoxy compound, diglycidyl isocyanurate or triglycidyl isocyanurate.

  From the viewpoint of further suppressing deterioration of the quality of the optical semiconductor device due to use in a harsh environment, the epoxy compound (A) is preferably an epoxy compound having no aromatic skeleton.

  The epoxy equivalent of the epoxy compound (A) is preferably 50 or more, more preferably 100 or more, preferably 500 or less, more preferably 300 or less. The epoxy equivalent of the epoxy compound (A) is particularly preferably 300 or less. When the epoxy equivalent is not less than the above lower limit and not more than the above upper limit, the continuous moldability of the curable composition and the adhesion of the molded body to the adhesion target are further enhanced.

  The compounding quantity of the said epoxy compound (A) is suitably adjusted so that it may harden | cure moderately by provision of heat, and is not specifically limited. In 100% by weight of the white curable composition for optical semiconductor devices, the content of the epoxy compound (A) is preferably 1% by weight or more, more preferably 3% by weight or more, still more preferably 5% by weight or more, preferably It is 99 weight% or less, More preferably, it is 95 weight% or less, More preferably, it is 80 weight% or less. When the content of the epoxy compound (A) is not less than the above lower limit, the curable composition is more effectively cured by heating. When the content of the epoxy compound (A) is not more than the above upper limit, the heat resistance of the molded product is further increased.

[Curing agent (B)]
The said white curable composition for optical semiconductor devices contains the said hardening | curing agent (B) so that it can harden | cure efficiently by provision of heat. The curing agent (B) cures the epoxy compound (A). The curing agent (B) is an acid anhydride curing agent. By using the acid anhydride curing agent, adhesion with a member such as a sealant or a lead frame that is in contact with the molded body is increased. Further, by using the acid anhydride curing agent, it is possible to maintain high curability and further suppress the molding unevenness of the molded body. As the acid anhydride curing agent, a known acid anhydride curing agent used as a curing agent for the epoxy compound (A) can be used. As for the said hardening | curing agent (B), only 1 type may be used and 2 or more types may be used together.

  As the acid anhydride curing agent, any of an acid anhydride having an aromatic skeleton and an acid anhydride having an alicyclic skeleton can be used.

  Preferred examples of the acid anhydride curing agent include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methyl nadic anhydride, nadic anhydride, glutaric anhydride. And methylhexahydrophthalic anhydride and methyltetrahydrophthalic anhydride.

  The acid anhydride curing agent preferably does not have a double bond. Preferable acid anhydride curing agents having no double bond include hexahydrophthalic anhydride and methylhexahydrophthalic anhydride.

  The mixing ratio of the epoxy compound (A) and the curing agent (B) is not particularly limited. The content of the curing agent (B) (acid anhydride curing agent) with respect to 100 parts by weight of the epoxy compound (A) is preferably 0.5 parts by weight or more, more preferably 1 part by weight or more, and still more preferably. Is 2 parts by weight or more, particularly preferably 3 parts by weight or more, preferably 500 parts by weight or less, more preferably 300 parts by weight or less, still more preferably 200 parts by weight or less, particularly preferably 100 parts by weight or less.

  Moreover, in the said white curable composition for optical semiconductor devices, the equivalent ratio (epoxy equivalent) of the epoxy equivalent of the said epoxy compound (A) whole and the hardening | curing agent equivalent of the said hardening | curing agent (B) (acid anhydride hardening | curing agent). : Curing agent equivalent) is preferably 0.3: 1 to 3: 1 and more preferably 1.3: 1 to 2: 1. When the equivalent ratio (epoxy equivalent: curing agent equivalent) satisfies the above range, the heat resistance and weather resistance of the molded article are further enhanced.

[White pigment (C)]
Since the said white curable composition for optical semiconductor devices contains the said white pigment (C), a molded object with a high reflectance of light can be obtained. Further, by using the white pigment (C), a molded article having a high light reflectance can be obtained as compared with the case where only the filler other than the white pigment (C) is used. As for the said white pigment (C), only 1 type may be used and 2 or more types may be used together.

  The white pigment (C) is not particularly limited. A conventionally known white pigment can be used as the white pigment (C).

  Examples of the white pigment (C) include alumina, titanium oxide, zinc oxide, zirconium oxide, antimony oxide and magnesium oxide.

  From the viewpoint of further increasing the light reflectance of the molded product, the white pigment (C) is preferably titanium oxide, zinc oxide or zirconium oxide. When this preferred white pigment is used, one or more white pigments can be used among titanium oxide, zinc oxide and zirconium oxide. The white pigment (C) is preferably titanium oxide or zinc oxide, preferably titanium oxide, and preferably zinc oxide. The white pigment (C) may be zirconium oxide.

  The titanium oxide is preferably rutile titanium oxide. By using rutile type titanium oxide, the heat resistance of the molded body is further increased, and even if the optical semiconductor device is used in a harsh environment, the quality is hardly lowered.

  The titanium oxide is preferably rutile type titanium oxide surface-treated with aluminum oxide. In 100% by weight of the white pigment (C), the content of rutile titanium oxide surface-treated with the aluminum oxide is preferably 10% by weight or more, more preferably 30% by weight or more and 100% by weight or less. The total amount of the white pigment (C) may be rutile titanium oxide surface-treated with the aluminum oxide. Use of the rutile type titanium oxide surface-treated with the aluminum oxide further increases the heat resistance of the molded body.

  Examples of the rutile-type titanium oxide surface-treated with the aluminum oxide include, for example, “CR-58” manufactured by Ishihara Sangyo Co., Ltd., which is a rutile chlorine method titanium oxide, and “R-” manufactured by Ishihara Sangyo Co., Ltd., which is a rutile sulfuric acid method titanium oxide. 630 "etc. are mentioned.

  The zinc oxide is preferably surface-treated zinc oxide. From the viewpoint of further improving the workability of the molded body and the light reflectance of the molded body, the zinc oxide is preferably surface-treated with a material containing silicon, aluminum, or zirconia, and the surface is made of a material containing silicon. More preferably, it has been treated. The material containing silicon is preferably a silicone compound.

  The zirconium oxide is preferably surface-treated zirconium oxide. From the viewpoint of further improving the workability of the molded body and the light reflectance of the molded body, the zirconium oxide is preferably surface-treated with a material containing silicon, aluminum or zirconia, and the surface is treated with a material containing silicon. More preferably, it has been treated. The material containing silicon is preferably a silicone compound.

  The surface treatment method is not particularly limited. As a surface treatment method, a dry method, a wet method, an integral blend method, and other known and commonly used surface treatment methods can be used.

  In 100% by weight of the white curable composition for an optical semiconductor device, the content of the white pigment (C) is preferably 3% by weight or more, more preferably 5% by weight or more, and further preferably 7% by weight or more. Preferably it is 10 weight% or more, Preferably it is 95 weight% or less, More preferably, it is 90 weight% or less, More preferably, it is 85 weight% or less. When the content of the white pigment (C) is not less than the above lower limit and not more than the above upper limit, the light reflectance of the molded body is further increased, and the molded body of the curable composition is further increased.

(Filler (D))
The filler (D) is a filler other than the white pigment (C). The filler (D) is different from the white pigment (C). As for the said filler (D), only 1 type may be used and 2 or more types may be used together.

  Any of an inorganic filler and an organic filler can be used as the filler (D). Specific examples of the filler (D) include silica, mica, beryllia, potassium titanate, barium titanate, strontium titanate, calcium titanate, antimony oxide, aluminum borate, aluminum hydroxide, magnesium oxide, calcium carbonate. , Magnesium carbonate, aluminum carbonate, calcium silicate, aluminum silicate, magnesium silicate, calcium phosphate, calcium sulfate, barium sulfate, silicon nitride, boron nitride, calcined clay clay, talc, silicon carbide, crosslinked acrylic resin particles and Examples thereof include silicone particles. The filler (D) is preferably an inorganic filler. The filler (D) is not titanium oxide, which is a white pigment, is not zinc oxide, which is a white pigment, and is not zirconium oxide, which is a white pigment.

  From the viewpoint of further improving the moldability of the curable composition and the adhesion between the molded body and the object to be adhered, the filler (D) preferably contains silica.

  The average particle diameter of the filler (D) is preferably 0.1 μm or more, and preferably 100 μm or less. The moldability of the said curable composition becomes still better that the said average particle diameter is more than the said minimum. When the average particle size is less than or equal to the above upper limit, the appearance defect of the molded body is more difficult to occur.

  The average particle size in the filler (D) is a particle size value when the integrated value is 50% in the volume-based particle size distribution curve. The average particle size can be measured using, for example, a laser beam type particle size distribution meter. As a commercial product of the laser beam type particle size distribution analyzer, “LS 13 320” manufactured by Beckman Coulter, Inc. can be cited.

  The content of the filler (D) and the silica is preferably 5% by weight or more, more preferably 10% by weight or more, and further preferably 20% by weight in 100% by weight of the white curable composition for optical semiconductor devices. % Or more, preferably 95% by weight or less, more preferably 90% by weight or less, and still more preferably 85% by weight or less. When the content of the filler (D) and the silica is not less than the above lower limit and not more than the above upper limit, the moldability of the curable composition is further enhanced. When the content of the filler (D) is not more than the above upper limit, the light reflectance of the molded body is further increased.

  In 100% by weight of the white curable composition for optical semiconductor devices, the total content of the white pigment (C) and the filler (D) is preferably 20% by weight or more, more preferably 50% by weight or more. More preferably, it is 60% by weight or more, preferably 95% by weight or less, more preferably 90% by weight or less, and still more preferably 85% by weight or less. When the total content of the white pigment (C) and the filler (D) is not less than the above lower limit and not more than the above upper limit, the moldability of the curable composition and the light reflectance of the molded body are even higher. Thus, the fluidity of the curable composition becomes even more appropriate. Further, when the total content of the white pigment (C) and the filler (D) is 50% by weight or more, the strength of the molded body is further increased, and the fluidity of the curable composition is further increased. It becomes more moderate.

(Curing accelerator (E))
In order to accelerate the reaction between the epoxy compound (A) and the curing agent (B), the white curable composition for optical semiconductor devices includes the curing accelerator (E). Use of the curing accelerator (E) increases the curability of the curable composition and further increases the heat resistance of the molded body. As for the said hardening accelerator (E), only 1 type may be used and 2 or more types may be used together.

  Examples of the curing accelerator (E) include urea compounds, onium salt compounds, imidazole compounds, phosphorus compounds, amine compounds, and organometallic compounds.

  Examples of the urea compound include urea, aliphatic urea compounds, and aromatic urea compounds. Specific examples of the urea compound include urea, methylurea, 1,1-dimethylurea, 1,3-dimethylurea, 1,1,3,3-tetramethylurea, 1,3-diphenylurea, and tri-n-. Examples include butylthiourea. Urea compounds other than these may be used.

  Examples of the onium salt compounds include ammonium salts, phosphonium salts, and sulfonium salt compounds.

  Examples of the imidazole compound include 2-undecylimidazole, 2-heptadecylimidazole, 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl- 2-methylimidazole, 1-benzyl-2-phenylimidazole, 1,2-dimethylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-un Decylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6- [2 ′ -Methyl Midazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-undecylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6 [2′-Ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine Isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-methylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-dihydroxymethylimidazole Can be mentioned.

  The phosphorus compound contains phosphorus and is a phosphorus-containing compound. Examples of the phosphorus compound include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetra-n-butylphosphonium-o, o-diethylphosphorodithioate, tetra-n-butylphosphonium-tetrafluoroborate, and tetra-n-. Examples thereof include butylphosphonium-tetraphenylborate. Phosphorus compounds other than these may be used.

  Examples of the amine compound include diethylamine, triethylamine, diethylenetetramine, triethylenetetramine, 4,4-dimethylaminopyridine, diazabicycloalkane, diazabicycloalkene, quaternary ammonium salt, triethylenediamine, and tri-2,4. , 6-dimethylaminomethylphenol. You may use the salt of these compounds. Phenylphosphine, tetraphenylphosphonium tetraphenylborate, tetra-n-butylphosphonium-o, o-diethylphosphorodithioate, tetra-n-butylphosphonium-tetrafluoroborate, tetra-n-butylphosphonium-tetraphenylborate It is done.

  Examples of the organometallic compound include alkali metal compounds and alkaline earth metal compounds. Specific examples of the organometallic compound include zinc naphthenate, cobalt naphthenate, tin octylate, cobalt octylate, bisacetylacetonate cobalt (II), and trisacetylacetonate cobalt (III).

  From the viewpoint of further improving the curability of the curable composition and further improving the heat resistance of the molded article, the curing accelerator (E) is preferably a urea compound, an onium salt compound or a phosphorus compound. . The curing accelerator (E) is preferably a urea compound, preferably an onium salt compound, and preferably a phosphorus compound.

  The mixing ratio of the epoxy compound (A) and the curing accelerator (E) is not particularly limited. The content of the curing accelerator (E) with respect to 100 parts by weight of the epoxy compound (A) is preferably 0.01 parts by weight or more, more preferably 0.1 parts by weight or more, preferably 100 parts by weight or less. More preferably, it is 10 parts by weight or less, and still more preferably 5 parts by weight or less.

(Release agent (F))
In the present invention, even if the release agent (F) is not used, and when the release agent (F) is used, even if the content of the release agent (F) is small, the adhesion of the molded product to the adhesion target object. And the continuous formability becomes high. However, from the viewpoint of further improving the continuous moldability, the white curable composition for optical semiconductor devices may contain a release agent (F). Even when the mold release agent (F) is used, when the structure of the present invention is provided, the adhesion of the molded body is maintained while maintaining high continuous moldability as compared with the case where the structure of the present invention is not provided. The adhesion to the object can be increased. As for the said mold release agent (F), only 1 type may be used and 2 or more types may be used together.

  The release agent (F) is not particularly limited. As the release agent (F), a conventionally known release agent can be used. Examples of the release agent (F) include fatty acid ester waxes, oxidized or non-oxidized polyolefin waxes, paraffin waxes, carnauba waxes, and silicone compounds. Examples of the silicone compound include silicone oil and modified silicone oil.

  In 100% by weight of the white curable composition for optical semiconductor devices, the content of the release agent (F) is 0% by weight or more, preferably 0.05% by weight or more, more preferably 0.1% by weight or more, Preferably it is 5 weight% or less, More preferably, it is 3 weight% or less. The said white curable composition for optical semiconductor devices does not need to contain the said mold release agent (F). When the content of the release agent (F) is not less than the above lower limit, the continuous moldability is further enhanced. When the content of the release agent (F) is not more than the above upper limit, the adhesion between the adhesion target and the molded body is further enhanced.

  From the viewpoint of further improving the adhesion between the object to be adhered and the molded body, the white curable composition for optical semiconductor devices does not contain the release agent (F) or the release agent (F). It is particularly preferable that the content of the release agent (F) in 100% by weight of the white curable composition for an optical semiconductor device is 2% by weight or less.

(Other ingredients)
The white curable composition for an optical semiconductor device includes a coupling agent, an antioxidant, a resin modifier, a colorant, a diluent, a surface treatment agent, a flame retardant, a viscosity modifier, a dispersant, as necessary. It may contain a dispersion aid, a surface modifier, a plasticizer, an antibacterial agent, an antifungal agent, a leveling agent, a stabilizer, an anti-sagging agent or a phosphor. The diluent may be a reactive diluent or a non-reactive diluent.

  It does not specifically limit as said coupling agent, A silane coupling agent and a titanate coupling agent are mentioned.

  It does not specifically limit as said antioxidant, A phenolic antioxidant, phosphorus antioxidant, an amine antioxidant, etc. are mentioned.

  The colorant is not particularly limited, and various organic materials such as phthalocyanine, azo compound, disazo compound, quinacridone, anthraquinone, flavantron, perinone, perylene, dioxazine, condensed azo compound, azomethine compound, infrared absorber and ultraviolet absorber. And inorganic pigments such as lead sulfate, chromium yellow, zinc yellow, chromium vermillion, valve shell, cobalt purple, bitumen, ultramarine, carbon black, chromium green, chromium oxide and cobalt green.

(Other details of white curable composition for optical semiconductor device and molded body for optical semiconductor device)
The said white curable composition for optical semiconductor devices is used in order to obtain the molded object which has a frame part arrange | positioned at the side of an optical semiconductor element in an optical semiconductor device. It is preferable that the said white curable composition for optical semiconductor devices is used in order to obtain a molded object using a metal mold | die. The white curable composition for an optical semiconductor device is disposed on a side of the optical semiconductor element in the optical semiconductor device, has a frame portion, and the optical semiconductor element is disposed in a region surrounded by the inner surface of the frame portion. It is preferably used for obtaining a molded body that is used by being filled with a sealing agent so as to be sealed. The white curable composition for an optical semiconductor device is preferably used for obtaining a molded body having an opening through which light emitted from the optical semiconductor element is extracted.

  The said white curable composition for optical semiconductor devices is a white curable composition for optical semiconductor devices used in an optical semiconductor device, in order to obtain the molded object arrange | positioned on the lead frame in which an optical semiconductor element is mounted. It is preferable. The lead frame is, for example, a component for supporting and fixing the optical semiconductor element and achieving electrical connection between the electrode of the optical semiconductor element and external wiring. The molded body is a molded body for an optical semiconductor device, and is preferably an optical semiconductor element mounting substrate.

  Since a molded article having a high light reflectance is obtained, the white curable composition for optical semiconductor devices is disposed on the lead frame on which the optical semiconductor element is mounted and on the side of the optical semiconductor element in the semiconductor device. The white curable composition for optical semiconductor devices used for obtaining a molded body having a light reflecting portion that reflects light emitted from the optical semiconductor element is preferable.

  Since a molded article having high light reflectance is obtained, the white curable composition for optical semiconductor devices is arranged on a lead frame on which the optical semiconductor element is mounted and surrounding the optical semiconductor element in the semiconductor device. It is preferable that the white curable composition for optical semiconductor devices is used for obtaining a molded body having a light reflecting portion for reflecting light emitted from the optical semiconductor element on the inner surface. The molded body preferably has a frame portion surrounding the optical semiconductor element, and is preferably an outer wall member surrounding the optical semiconductor element. The molded body is preferably a frame-shaped member. In addition, it is preferable that the said molded object differs from the die-bonding material for joining an optical semiconductor element (die bonding) in an optical semiconductor device. It is preferable that the molded body does not include the die bond material.

  The white curable composition for an optical semiconductor device is preferably used for obtaining individual molded bodies by dividing the pre-divided molded body after obtaining a molded body before division in which a plurality of molded bodies are continuous. . The white curable composition for an optical semiconductor device is obtained by obtaining a pre-division molded body in which a plurality of molded bodies are connected via a lead frame, and then cutting the lead frame to divide the pre-division molded body. It is preferable to be used in order to obtain a molded article.

  The white curable composition for an optical semiconductor device includes an epoxy compound (A), a curing agent (B) (an acid anhydride curing agent), a white pigment (C), a filler (D) other than a white pigment, and a curing accelerator. It can be obtained by mixing (E) and other components blended as necessary by a conventionally known method. A general method for producing the curable composition includes a method in which each component is kneaded by an extruder, a kneader, a roll, an extruder, etc., and then the kneaded product is cooled and pulverized. From the viewpoint of improving dispersibility, the kneading of each component is preferably performed in a molten state. The kneading conditions are appropriately determined depending on the type and amount of each component. Kneading is preferably performed at 15 to 150 ° C for 5 to 100 minutes, more preferably 15 to 150 ° C for 5 to 60 minutes, further preferably 5 to 150 ° C for 5 to 40 minutes, and further preferably 20 to 100. It is particularly preferable to knead at 10 ° C. for 10 to 30 minutes.

  The molded object for optical semiconductor devices which concerns on this invention is obtained by hardening the white curable composition for optical semiconductor devices mentioned above. The white curable composition for optical semiconductor devices is formed into a predetermined shape. The molded body obtained by curing the white curable composition for optical semiconductor devices is suitably used for reflecting light emitted from the optical semiconductor element in the optical semiconductor device.

  Examples of a method for obtaining the molded article for an optical semiconductor device using the white curable composition for an optical semiconductor device include a compression molding method, a transfer molding method, a laminate molding method, an injection molding method, an extrusion molding method, and a blow molding method. Is mentioned. Of these, transfer molding is preferred.

  In the transfer molding method, for example, the molded product is formed by transfer molding the white curable composition for an optical semiconductor device under the conditions of a molding temperature of 100 to 200 ° C., a molding pressure of 5 to 20 MPa, and a molding time of 60 to 300 seconds. can get.

(Details of optical semiconductor device and embodiment of optical semiconductor device)
An optical semiconductor device according to the present invention includes a lead frame, an optical semiconductor element mounted on the lead frame, and a frame disposed on the lead frame and disposed on a side of the optical semiconductor element. A molded body having a portion. The said molded object in the said optical semiconductor device is obtained by hardening the said white curable composition for optical semiconductor devices.

  In the optical semiconductor device according to the present invention, it is preferable that the inner surface of the molded body is a light reflecting portion that reflects the light emitted from the optical semiconductor element.

  1A and 1B schematically show an example of an optical semiconductor device according to an embodiment of the present invention in a cross-sectional view and a perspective view.

  The optical semiconductor device 1 according to this embodiment includes a lead frame 2, an optical semiconductor element 3, a first molded body 4, and a second molded body 5. The optical semiconductor element 3 is preferably a light emitting diode (LED). The first molded body 4 and the second molded body 5 are not formed integrally, but are two other members. The first molded body 4 and the second molded body 5 may be integrally formed. The first molded body 4 is a frame portion. The 2nd molded object 5 is a bottom part. In the optical semiconductor device 1, the molded body has a frame portion (first molded body 4) and a bottom portion (second molded body 5). The frame part which is the 1st molded object 4 is an outer wall part. The frame part which is the 1st molded object 4 is cyclic | annular.

  Note that the molded body may be a molded body having no bottom. You may use combining the molded object which has a frame part obtained by hardening the said curable composition, and another bottom member. The molded body may be a frame-shaped molded body having only a frame portion. The bottom member may be a molded body.

  An optical semiconductor element 3 is mounted and arranged on the lead frame 2. A first molded body 4 (frame portion) is disposed on the lead frame 2. A second molded body 5 (bottom part) is disposed between the plurality of lead frames 2 and below the lead frames 2. Note that the molded body or the bottom member may not be disposed below the lead frame, and the lead frame may be exposed. The optical semiconductor element 3 is disposed inside the first molded body 4. A first molded body 4 is disposed on the side of the optical semiconductor element 3, and the first molded body 4 is disposed so as to surround the optical semiconductor element 3. The first and second molded bodies 4 and 5 (molded bodies having a frame portion and a bottom portion) are cured products of the above-described white curable composition for optical semiconductor devices, and the above-described white curable composition for optical semiconductor devices. It is obtained by curing the product. Therefore, the 1st molded object 4 has light reflectivity, and has a light reflection part in the inner surface 4a. That is, the inner surface 4a of the first molded body 4 is a light reflecting portion. Therefore, the periphery of the optical semiconductor element 3 is surrounded by the inner surface 4 a having the light reflectivity of the first molded body 4. Only the 1st molded object 4 may be the hardened | cured material of the white curable composition for optical semiconductor devices mentioned above.

  The first molded body 4 (frame part) has an opening through which light emitted from the optical semiconductor element 3 is extracted. The first and second molded bodies 4 and 5 are white. The inner surface 4a of the first molded body 4 is formed such that the diameter of the inner surface 4a increases as it goes toward the opening end. Therefore, of the light emitted from the optical semiconductor element 3, the light indicated by the arrow B reaching the inner surface 4 a is reflected by the inner surface 4 a and travels forward of the optical semiconductor element 3.

  The optical semiconductor element 3 is connected to the lead frame 2 using a die bond material 6. The die bond material 6 has conductivity. A bonding pad (not shown) provided on the optical semiconductor element 3 and the lead frame 2 are electrically connected by a bonding wire 7. A sealing agent 8 is filled in the region surrounded by the inner surface 4 a of the first molded body 4 so as to seal the optical semiconductor element 3 and the bonding wire 7.

  In the optical semiconductor device 1, when the optical semiconductor element 3 is driven, light is emitted as indicated by a broken line A. In the optical semiconductor device 1, not only the light irradiated from the optical semiconductor element 3 to the side opposite to the upper surface of the lead frame 2, that is, the upper side, but also the light reaching the inner surface 4 a of the first molded body 4 is indicated by an arrow B. There is also light that is reflected by the light. Therefore, the brightness of the light extracted from the optical semiconductor device 1 is bright.

  FIG. 2 shows a modification of the optical semiconductor device 1 shown in FIG. The optical semiconductor device 1 shown in FIG. 1 differs from the optical semiconductor device 21 shown in FIG. 2 only in the electrical connection structure using the die bonding materials 6 and 22 and the bonding wires 7 and 23. The die bond material 6 in the optical semiconductor device 1 has conductivity. On the other hand, the optical semiconductor device 21 has a die bond material 22, and the die bond material 22 does not have conductivity. In the optical semiconductor device 1, a bonding pad (not shown) provided on the optical semiconductor element 3 and a lead frame 2 (lead frame located on the right side in FIG. 1A) are electrically connected by a bonding wire 7. Has been. The optical semiconductor device 21 has a bonding wire 23 in addition to the bonding wire 7. In the optical semiconductor device 21, a bonding pad (not shown) provided on the optical semiconductor element 3 and a lead frame 2 (a lead frame located on the right side in FIG. 2) are electrically connected by a bonding wire 7. Further, a bonding pad (not shown) provided on the optical semiconductor element 3 and the lead frame 2 (lead frame located on the left side in FIG. 2) are electrically connected by a bonding wire 23.

  The structures shown in FIGS. 1 and 2 are merely examples of the optical semiconductor device according to the present invention, and can be appropriately modified to a structure of a molded body, a mounting structure of an optical semiconductor element, and the like.

  Further, as shown in FIG. 3, a pre-division optical semiconductor device component 11 in which a plurality of optical semiconductor device components are connected is prepared, and the pre-division optical semiconductor device component 11 is cut at a portion indicated by a broken line X. Individual optical semiconductor device components may be obtained. The pre-division optical semiconductor device component 11 includes a pre-division lead frame 2A, a pre-division first molded body 4A, and a pre-division second molded body 5A. After obtaining individual components for an optical semiconductor device, the optical semiconductor device 3 may be mounted, and the optical semiconductor device 3 may be sealed with a sealant 8 to obtain the optical semiconductor device 1. When the pre-division lead frame 2A is cut at a portion indicated by a broken line X, the lead frame 2 is obtained. When the first molded body 4A before division is cut at a portion indicated by a broken line X, the first molded body 4 is obtained. When the second molded body 5A before division is cut at a portion indicated by a broken line X, the second molded body 5 is obtained.

  Further, as shown in FIG. 4, a pre-division optical semiconductor device 12 in which a plurality of pre-division optical semiconductor devices are connected is prepared, and the pre-division optical semiconductor device 12 is cut at a portion indicated by a broken line X. A semiconductor device may be obtained. The pre-division optical semiconductor device 12 includes a pre-division lead frame 2A, a pre-division first molded body 4A, and a pre-division second molded body 5A. As in the optical semiconductor device 1 shown in FIGS. 1 and 2, in the pre-division optical semiconductor device 12, the optical semiconductor element 3 is mounted and arranged on the pre-division lead frame 2A. 3 and 4, in the pre-division optical semiconductor device component and the pre-division optical semiconductor device, a plurality of molded bodies are connected to form a pre-division molded body, but a plurality of molded bodies are not connected to each other. The front optical semiconductor device component and the pre-division optical semiconductor device may be divided to obtain the optical semiconductor device component and the optical semiconductor device.

  Hereinafter, the present invention will be clarified by giving specific examples and comparative examples of the present invention. The present invention is not limited to the following examples.

  In the examples and comparative examples, the following materials were used.

(Epoxy compound (A))
1) EHPE3150 (epoxy resin having an alicyclic skeleton, epoxy equivalent 177, manufactured by Daicel)
2) TEPIC (triglycidyl isocyanurate, epoxy equivalent 100, manufactured by Nissan Chemical Industries)

3) YD-011 (bisphenol A type epoxy resin, epoxy equivalent 450, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)

(Curing agent (B))
1) Ricacid TH (tetrahydrophthalic anhydride, manufactured by Shin Nippon Chemical Co., Ltd.)
2) Ricacid MH (4-methylhexahydrophthalic anhydride, manufactured by Shin Nippon Chemical Co., Ltd.)
3) Ricacid HH (Hexahydrophthalic anhydride, manufactured by Shin Nippon Chemical Co., Ltd.)

(White pigment (C))
1) CR-58 (titanium oxide, rutile type, surface-treated with Al, average particle size 0.25 μm, manufactured by Ishihara Sangyo Co., Ltd.)
2) UT771 (Titanium oxide, rutile type, surface treated with Al, Zr, average particle size 0.25 μm, organically treated, manufactured by Ishihara Sangyo Co., Ltd.)
3) Zinc oxide type I (average particle size 1 μm, manufactured by Sakai Chemical Industry Co., Ltd.)
4) UEP (zirconium oxide, average particle size 0.5 μm, manufactured by Daiichi Rare Element Chemical Industries, Ltd.)

(Filler (D))
1) MSR-3512 (spherical silica, average particle size 30 μm, manufactured by Tatsumori)
2) AA (crushed silica, average particle size 6 μm, manufactured by Tatsumori)
3) B-55 (barium sulfate which is a crushing filler, average particle size 1.2 μm, manufactured by Sakai Chemical Industry Co., Ltd.)

(Curing accelerator (E))
1) SA102 (DBU-octylate, manufactured by San Apro)
2) PX-4ET (tetra-n-butylphosphonium-o, o-diethyl phosphorodithionate, manufactured by Nippon Chemical Industry Co., Ltd.)
3) PX-4PB (tetrabutylphosphonium tetraphenylborate, manufactured by Nippon Chemical Industry Co., Ltd.)
4) C11Z-CN (1-cyanoethyl-2-undecylimidazole, manufactured by Shikoku Kasei Kogyo Co., Ltd.)

(Release agent (F))
1) Seridust 3715 (polyethylene wax, manufactured by Clariant Japan)
2) M-9676 (stearyl stearate, manufactured by NOF Corporation)

(Examples 1-21 and Comparative Examples 1-6)
Each component shown in the following Tables 1 to 4 is blended in the blending amounts shown in the following Tables 1 to 4 (the blending unit is parts by weight), and 70 in a mixer (“Lab Plast Mill R-60” manufactured by Toyo Seiki Seisakusho) The mixture was mixed at 10 ° C. for 10 minutes to obtain a melt-kneaded product. When the melt-kneaded material was solid at room temperature, the melt-kneaded material was pulverized at room temperature. Next, after aging in the time shown in the following Tables 1 to 4 in an oven at 50 ° C. or after aging was not performed (aging time: 0 hour), tableting was performed to obtain a white curable composition. Got. In addition, when the melt-kneaded material was a liquid, it was used as a white curable composition in a liquid state.

(Measurement)
(1) Calorific value from start of curing to completion of curing 50 mg of the obtained white curable composition was weighed into an aluminum pan and subjected to differential scanning calorimetry (DSC).

  In order to perform the above-mentioned DSC, “EXSTAR DSC7020” manufactured by SII Nanotechnology Inc. was used. The measurement conditions were such that heating was performed from room temperature (23 ° C.) at a rate of temperature increase of 10 ° C./min. The calorific value accompanying thermosetting of the curable composition was measured.

(2) Melt viscosity 180 ° C of the obtained white curable composition under the conditions of a temperature of 180 ° C, a load of 20 kgf, a die hole diameter of 1 mm and a die length of 1 mm, using an elevated flow tester manufactured by Shimadzu Corporation. The melt viscosity was measured.

(Evaluation)
(1) Continuous formability After forming a circuit by etching on a copper material (TAMAC 194), silver plating was applied to obtain a lead frame (silver plating surface, thickness 0.2 mm).

  As a mold, a batch molding mold having 150 concave portions (optical semiconductor element mounting portions) arranged in a matrix of 15 vertical × 10 horizontal was prepared. The cavity size was 4 mm × 2 mm per piece and the depth was 1 mm. Using a mold cleaning material (“Nicaret RCC” manufactured by Nippon Carbide), the mold was cleaned three times, and then a mold release recovery material (“Nicaret ECR-C KU” manufactured by Nippon Carbide) was used. The mold was given releasability.

  Using a mold provided with releasability, transfer molding of the obtained white curable composition is repeated, and a substance derived from the curable composition after molding adheres to the mold, and molding is performed. The number of moldings until it became impossible was measured.

(2) Formability Under the same conditions as in the evaluation of (1) continuous formability, transfer molding of the obtained white curable composition was performed to obtain a substrate for mounting an optical semiconductor device. The obtained substrate for mounting an optical semiconductor device was visually inspected, and formability was determined according to the following criteria.

[Criteria for moldability]
○: There is no appearance abnormality such as chipping and weld due to poor filling in the molded body ×: There is one or more appearance abnormality such as chipping and welding due to poor filling in the molded body

(3) Adhesiveness between molded body and silver plating Transfer molding of the obtained white curable composition was performed under the same conditions as in the evaluation of (1) continuous moldability to obtain a substrate for mounting an optical semiconductor device. The obtained substrate for mounting an optical semiconductor device was after-cured at 150 ° C. for 2 hours. In the molded body after the after cure, burrs were removed using “AX-930” manufactured by Rix Corporation. The conditions for removing burrs were as follows: electrolytic current 4A, electrolysis time 90 seconds, and cleaning pressure 10 MPa.

  Red ink was dropped into the cavity (150 locations) of the molded body after removing the burrs so as not to spill from the cavity, and left for 24 hours. After 24 hours, the adhesion between the molded product and the silver plating was visually determined according to the following criteria.

[Judgment criteria for adhesion between molded body and silver plating]
○○: 0 points out of 150 locations where ink leaks from the interface between the molded body and the lead frame ○: 1 location out of 150 locations where ink leaks from the interface between the molded body and the lead frame Not less than 3 and not more than 3 ×: Location where ink leaks from the interface between the molded body and the lead frame exceeds 3 out of 150

(4) Adhesiveness between molded body and copper A lead frame (copper surface, thickness 0.2 mm) in which the lead frame was not subjected to silver plating was prepared. Except for using this lead frame, transfer molding of the obtained white curable composition was performed under the same conditions as in the evaluation of (1) continuous moldability to obtain a substrate for mounting an optical semiconductor device. The obtained substrate for mounting an optical semiconductor device was after-cured at 150 ° C. for 2 hours. In the molded body after the after cure, burrs were removed using “AX-930” manufactured by Rix Corporation. The conditions for removing burrs were as follows: electrolytic current 4A, electrolysis time 90 seconds, and cleaning pressure 10 MPa.

  Red ink was dropped into the cavity (150 locations) of the molded body after removing the burrs so as not to spill from the cavity, and left for 24 hours. After 24 hours, the adhesion between the molded body and copper was visually determined based on the following criteria.

[Judgment criteria for adhesion between molded body and copper]
○○: 0 points out of 150 locations where ink leaks from the interface between the molded body and the lead frame ○: 1 location out of 150 locations where ink leaks from the interface between the molded body and the lead frame Not less than 3 and not more than 3 ×: Location where ink leaks from the interface between the molded body and the lead frame exceeds 3 out of 150

(5) Deformation of molded body After a circuit was formed on a copper material (TAMAC 194) by etching, silver plating was applied to obtain a lead frame (silver plated surface, thickness 0.2 mm) having dimensions of 75 mm × 250 mm.

  As a mold, a collective mold having 4 blocks of 300 concave portions (optical semiconductor element mounting portions) arranged in a matrix of 25 vertical × 12 horizontal was prepared. The cavity size was 4 mm × 2 mm per piece and the depth was 0.5 mm. Using a mold cleaning material (“Nicaret RCC” manufactured by Nippon Carbide), the mold was cleaned three times, and then a mold release recovery material (“Nicaret ECR-C KU” manufactured by Nippon Carbide) was used. The mold was given releasability.

  The obtained white curable composition was transfer molded using a mold imparted with releasability, and after-curing was performed at 170 ° C. for 2 hours.

  The molded body after the after-curing was placed on a horizontal plane, and the amount of deformation of the molded body in the vertical direction from the plane was measured. The deformation of the molded body was determined according to the following criteria.

[Criteria for deformation of molded body]
○: Deformation amount in the vertical direction of the compact is less than 1 mm ×: Deformation amount in the vertical direction of the compact is 1 mm or more

  The results are shown in Tables 1 to 4 below. In Comparative Example 6, since the molded body was deformed, no evaluation was performed on (3) adhesion between the molded body and silver plating and (4) adhesion between the molded body and copper.

DESCRIPTION OF SYMBOLS 1 ... Optical semiconductor device 2 ... Lead frame 2A ... Lead frame before division 3 ... Optical semiconductor element 4 ... 1st molded object 4A ... 1st molded object 4a before division | segmentation 5 ... 2nd molded object 5A ... Before division | segmentation 2nd molded object 6 ... Die bond material 7 ... Bonding wire 8 ... Sealing agent 11 ... Parts for optical semiconductor devices before division 12 ... Optical semiconductor device before division 21 ... Optical semiconductor device 22 ... Die bonding material 23 ... Bonding wire

Claims (9)

A white curable composition for an optical semiconductor device, which is used to obtain a molded body having a frame portion disposed on the side of an optical semiconductor element in an optical semiconductor device, and is white,
An epoxy compound, an acid anhydride curing agent, a white pigment, a filler other than the white pigment, and a curing accelerator,
The white pigment is titanium oxide, zinc oxide or zirconium oxide;
The filler other than the white pigment contains silica,
The equivalent ratio of the total epoxy equivalent of the epoxy compound to the total curing agent equivalent of the acid anhydride curing agent is 0.3: 1 to 3: 1,
The content of the white pigment is 3% by weight or more and 95% by weight or less,
The content of the filler other than the white pigment is 5 wt% or more and 95 wt% or less,
The content of the curing accelerator is 0.01 parts by weight or more and 10 parts by weight or less with respect to 100 parts by weight of the epoxy compound,
A white curable composition for an optical semiconductor device, wherein the amount of heat generated from the start of curing to the completion of curing is 20 J / g or more and 100 J / g or less in differential scanning calorimetry.   The white curable composition for optical semiconductor devices of Claim 1 whose melt viscosity in 180 degreeC is less than 100 Pa * s.   The white curable composition for optical semiconductor devices of Claim 1 or 2 whose epoxy equivalent of the said epoxy compound is 300 or less. Does not contain a release agent, or the content of the release agent in the release agent further comprises and optical semiconductor device for white curable composition 100% by weight is less than 2 wt%, claim 1-3 The white curable composition for optical semiconductor devices of any one of these. The white curable composition for optical semiconductor devices of any one of Claims 1-4 which further contains a mold release agent. The white curable composition for optical semiconductor devices according to any one of claims 1 to 5 , which is used for obtaining a molded body disposed on a lead frame on which an optical semiconductor element is mounted in an optical semiconductor device. The light according to any one of claims 1 to 6 , which is used to obtain an individual molded body by dividing the pre-division molded body after obtaining a molded body before division in which a plurality of molded bodies are connected. White curable composition for semiconductor devices. A molded article having a frame portion disposed on the side of the optical semiconductor element in the optical semiconductor device, curing the optical semiconductor device for white curable composition according to any one of claims 1-7 The molded object for optical semiconductor devices obtained by these. A lead frame;
An optical semiconductor element mounted on the lead frame;
A molded body disposed on the lead frame and having a frame portion disposed on a side of the optical semiconductor element;
The molded body obtained by curing the optical semiconductor device for white curable composition according to any one of claims 1 to 7 the optical semiconductor device.

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