JP5967135B2 - Thermosetting light reflecting resin composition, optical semiconductor mounting substrate using the same, manufacturing method thereof, and optical semiconductor device. - Google Patents
Thermosetting light reflecting resin composition, optical semiconductor mounting substrate using the same, manufacturing method thereof, and optical semiconductor device. Download PDFInfo
- Publication number
- JP5967135B2 JP5967135B2 JP2014108112A JP2014108112A JP5967135B2 JP 5967135 B2 JP5967135 B2 JP 5967135B2 JP 2014108112 A JP2014108112 A JP 2014108112A JP 2014108112 A JP2014108112 A JP 2014108112A JP 5967135 B2 JP5967135 B2 JP 5967135B2
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- JP
- Japan
- Prior art keywords
- optical semiconductor
- resin composition
- semiconductor element
- curing agent
- light reflecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000003287 optical effect Effects 0.000 title claims description 64
- 239000004065 semiconductor Substances 0.000 title claims description 63
- 239000011342 resin composition Substances 0.000 title claims description 45
- 229920001187 thermosetting polymer Polymers 0.000 title claims description 40
- 239000000758 substrate Substances 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 27
- 229920000647 polyepoxide Polymers 0.000 claims description 27
- 239000003795 chemical substances by application Substances 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 18
- 239000012463 white pigment Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000011256 inorganic filler Substances 0.000 claims description 11
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 11
- 150000008065 acid anhydrides Chemical class 0.000 claims description 8
- 238000001721 transfer moulding Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 6
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims description 6
- 125000003700 epoxy group Chemical group 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 claims description 4
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 4
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 4
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 claims description 4
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 4
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 claims description 3
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 claims description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 3
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 claims description 3
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 claims description 3
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 claims description 3
- 239000001095 magnesium carbonate Substances 0.000 claims description 3
- 229910000021 magnesium carbonate Inorganic materials 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 238000001723 curing Methods 0.000 description 21
- 239000007822 coupling agent Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- KPRZOPQOBJRYSW-UHFFFAOYSA-N o-hydroxybenzylamine Natural products NCC1=CC=CC=C1O KPRZOPQOBJRYSW-UHFFFAOYSA-N 0.000 description 2
- -1 peracetic acid Chemical class 0.000 description 2
- 150000003018 phosphorus compounds Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- LTVUCOSIZFEASK-MPXCPUAZSA-N (3ar,4s,7r,7as)-3a-methyl-3a,4,7,7a-tetrahydro-4,7-methano-2-benzofuran-1,3-dione Chemical compound C([C@H]1C=C2)[C@H]2[C@H]2[C@]1(C)C(=O)OC2=O LTVUCOSIZFEASK-MPXCPUAZSA-N 0.000 description 1
- KNDQHSIWLOJIGP-UMRXKNAASA-N (3ar,4s,7r,7as)-rel-3a,4,7,7a-tetrahydro-4,7-methanoisobenzofuran-1,3-dione Chemical compound O=C1OC(=O)[C@@H]2[C@H]1[C@]1([H])C=C[C@@]2([H])C1 KNDQHSIWLOJIGP-UMRXKNAASA-N 0.000 description 1
- BSYJHYLAMMJNRC-UHFFFAOYSA-N 2,4,4-trimethylpentan-2-ol Chemical compound CC(C)(C)CC(C)(C)O BSYJHYLAMMJNRC-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000004018 acid anhydride group Chemical group 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- IRDLUHRVLVEUHA-UHFFFAOYSA-N diethyl dithiophosphate Chemical compound CCOP(S)(=S)OCC IRDLUHRVLVEUHA-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- FPVGTPBMTFTMRT-NSKUCRDLSA-L fast yellow Chemical compound [Na+].[Na+].C1=C(S([O-])(=O)=O)C(N)=CC=C1\N=N\C1=CC=C(S([O-])(=O)=O)C=C1 FPVGTPBMTFTMRT-NSKUCRDLSA-L 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- VANNPISTIUFMLH-UHFFFAOYSA-N glutaric anhydride Chemical compound O=C1CCCC(=O)O1 VANNPISTIUFMLH-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- RQAGEUFKLGHJPA-UHFFFAOYSA-N prop-2-enoylsilicon Chemical compound [Si]C(=O)C=C RQAGEUFKLGHJPA-UHFFFAOYSA-N 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Description
本発明は、光半導体素子と蛍光体などの波長変換手段とを組み合わせた光半導体装置に用いる熱硬化性光反射用樹脂組成物、該熱硬化性光反射用樹脂組成物を用いた光半導体素子搭載用基板とその製造方法および光半導体装置に関する。 The present invention relates to a thermosetting light reflecting resin composition used in an optical semiconductor device in which an optical semiconductor element and a wavelength converting means such as a phosphor are combined, and an optical semiconductor element using the thermosetting light reflecting resin composition The present invention relates to a mounting substrate, a manufacturing method thereof, and an optical semiconductor device.
光半導体素子を利用した光半導体装置としては、例えば、図５に示す構成のＳＭＤ（Ｓｕｒｆａｃｅｍｏｕｎｔｅｄ ｄｅｖｉｃｅ）タイプのＬＥＤ（Ｌｉｇｈｔ Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅ）が知られている。このＬＥＤは、通常、マウント基板リフレクタに形成されたカップ状部（凹部）に発光素子が配置され、さらに当該発光素子が配置されたカップ状部に透明封止樹脂が充填されている。リフレクタは、発光素子から側方に放射された光をその表面で拡散反射して軸方向に分配し、これによって軸上強度を高めることを目的として使用されている。特許文献１、２及び３には、熱可塑性のＳＭＤタイプのＬＥＤ用成形材料が開示されている。 As an optical semiconductor device using an optical semiconductor element, for example, an SMD (Surface Mounted Device) type LED (Light Emitting Diode) having the configuration shown in FIG. 5 is known. In this LED, usually, a light emitting element is disposed in a cup-shaped portion (concave portion) formed in the mount substrate reflector, and a transparent sealing resin is filled in the cup-shaped portion in which the light emitting element is disposed. The reflector is used for the purpose of increasing the on-axis intensity by diffusing and reflecting the light emitted from the light emitting element to the side and distributing it in the axial direction. Patent Documents 1, 2, and 3 disclose thermoplastic SMD type molding materials for LEDs.
近年、紫外領域に発光ピーク波長を有する光半導体素子が開発され、この素子についてもＳＭＤタイプのＬＥＤへの適用が期待されている。
しかしながら、一般に使用されているリフレクタ材料は、酸化チタンを顔料として用いているため、発光波長が短波長領域になると急激にその反射率が低下してしまう。また、紫外線による劣化が原因で可視領域の光に対しても反射率の低下が起こることが課題となっている。
In recent years, an optical semiconductor element having an emission peak wavelength in the ultraviolet region has been developed, and this element is also expected to be applied to SMD type LEDs.
However, since the reflector material generally used uses titanium oxide as a pigment, when the emission wavelength is in a short wavelength region, the reflectance is drastically reduced. Another problem is that the reflectance is reduced even in the visible region due to the deterioration caused by ultraviolet rays.
本発明は、上記に鑑みてなされたものであり、その目的は、硬化後の、可視光から近紫外光の反射率が高い熱硬化性光反射用樹脂組成物、該熱硬化性光反射用樹脂組成物を用いた光半導体搭載用基板とその製造方法および光半導体装置を提供するものである。 The present invention has been made in view of the above, and an object of the present invention is to provide a thermosetting light reflecting resin composition having high reflectivity from visible light to near ultraviolet light after curing, and for the thermosetting light reflection. An optical semiconductor mounting substrate using a resin composition, a manufacturing method thereof, and an optical semiconductor device are provided.
本発明は、以下の（１）〜（８）に記載の事項をその特徴とする。
（１）（Ａ）エポキシ樹脂、（Ｂ）硬化剤、（Ｃ）硬化触媒、（Ｄ）無機充填剤、（Ｅ）白色顔料、および（Ｆ）カップリング剤を含有する熱硬化性樹脂組成物において、熱硬化後の、波長８００ｎｍ〜３５０ｎｍにおける光反射率が８０％以上であり、熱硬化前には室温（２５℃）で加圧成型可能なことを特徴とする熱硬化性光反射用樹脂組成物。
The present invention is characterized by the following items (1) to (8).
(1) Thermosetting resin composition containing (A) epoxy resin, (B) curing agent, (C) curing catalyst, (D) inorganic filler, (E) white pigment, and (F) coupling agent The thermosetting light reflecting resin is characterized in that the light reflectance at a wavelength of 800 nm to 350 nm after thermosetting is 80% or more, and can be pressure-molded at room temperature (25 ° C.) before thermosetting. Composition.
（２）前記（Ｄ）無機充填剤が、シリカ、アルミナ、酸化マグネシウム、酸化アンチモン、水酸化アルミニウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウムからなる群から選択される１種以上であることを特徴とする上記（１）に記載の熱硬化性光反射用樹脂組成物。 (2) The inorganic filler (D) is at least one selected from the group consisting of silica, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, barium sulfate, magnesium carbonate, and barium carbonate. The thermosetting light reflecting resin composition as described in (1) above.
（３）前記（Ｅ）白色顔料が、無機中空粒子であることを特徴とする上記（１）または（２）に記載の熱硬化性光反射用樹脂組成物。 (3) The thermosetting light reflecting resin composition as described in (1) or (2) above, wherein the (E) white pigment is inorganic hollow particles.
（４）前記（Ｅ）白色顔料の平均粒径が１〜５０μｍの範囲にあることを特徴とする上記（１）〜（３）のいずれか１つに記載の熱硬化性光反射用樹脂組成物。 (4) The thermosetting light reflecting resin composition as described in any one of (1) to (3) above, wherein the average particle diameter of the white pigment (E) is in the range of 1 to 50 μm. object.
（５）前記（Ｄ）無機充填剤と前記（Ｅ）白色顔料の合計量が、樹脂組成物全体に対して７０体積％〜８５体積％の範囲であることを特徴とする上記（１）〜（４）のいずれか１つに記載の熱硬化性光反射用樹脂組成物。 (5) The total amount of the (D) inorganic filler and the (E) white pigment is in the range of 70% by volume to 85% by volume with respect to the entire resin composition. (4) The resin composition for thermosetting light reflection as described in any one of (4).
（６）光半導体素子搭載領域となる凹部が１つ以上形成されている光半導体素子搭載用基板であって、少なくとも前記凹部の内周側面が上記（１）〜（５）のいずれか１つに記載の熱硬化性光反射用樹脂組成物からなることを特徴とする光半導体素子搭載用基板。 (6) An optical semiconductor element mounting substrate in which one or more recesses to be an optical semiconductor element mounting region are formed, and at least an inner peripheral side surface of the recess is any one of the above (1) to (5) A substrate for mounting an optical semiconductor element, comprising the thermosetting light reflecting resin composition described in 1.
（７）光半導体素子搭載領域となる凹部が１つ以上形成されている光半導体素子搭載用基板の製造方法であって、少なくとも前記凹部を上記（１）〜（５）のいずれか１項記載の熱硬化性光反射用樹脂組成物を用いたトランスファー成型により形成することを特徴とする光半導体搭載用基板の製造方法。 (7) A method for manufacturing a substrate for mounting an optical semiconductor element in which at least one recess serving as an optical semiconductor element mounting region is formed, wherein at least the recess is any one of the above (1) to (5). A method for producing a substrate for mounting an optical semiconductor, characterized by forming by transfer molding using the thermosetting light reflecting resin composition.
（８）上記（６）に記載の光半導体素子搭載用基板または上記（７）に記載の製造方法により製造された光半導体素子搭載用基板と、前記光半導体素子搭載用基板の凹部底面に搭載される光半導体素子と、前記光半導体素子を覆うように形成される封止樹脂と、を備える光半導体装置。 (8) The optical semiconductor element mounting substrate according to (6) or the optical semiconductor element mounting substrate manufactured by the manufacturing method according to (7), and mounted on the bottom surface of the recess of the optical semiconductor element mounting substrate. An optical semiconductor device comprising: an optical semiconductor element that is formed; and a sealing resin that is formed so as to cover the optical semiconductor element.
本発明によれば、硬化後の、可視光から近紫外光の反射率が高い熱硬化性光反射用樹脂組成物、該熱硬化性光反射用樹脂組成物を用いた光半導体搭載用基板とその製造方法および光半導体装置を提供することが可能となる。 According to the present invention, after curing, a thermosetting light reflecting resin composition having high reflectivity from visible light to near ultraviolet light, a substrate for mounting an optical semiconductor using the thermosetting light reflecting resin composition, and The manufacturing method and the optical semiconductor device can be provided.
本発明で用いる（Ａ）エポキシ樹脂としては、電子部品封止用エポキシ樹脂成形材料で一般に使用されているものを用いることができ、特に限定されないが、例えば、フェノールノボラック型エポキシ樹脂、オルソクレゾールノボラック型エポキシ樹脂をはじめとするフェノール類とアルデヒド類のノボラック樹脂をエポキシ化したもの、ビスフェノールＡ、ビスフェノールＦ、ビスフェノールＳ、アルキル置換ビフェノール等のジグリシジエーテル、ジアミノジフェニルメタン、イソシアヌル酸等のポリアミンとエピクロルヒドリンの反応により得られるグリシジルアミン型エポキシ樹脂、オレフィン結合を過酢酸等の過酸で酸化して得られる線状脂肪族エポキシ樹脂、及び脂環族エポキシ樹脂等があり、これらは単独でも、２種以上併用してもよい。また、使用するエポキシ樹脂は比較的着色のないものであることが好ましく、そのようなエポキシ樹脂としては、例えば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、トリグリシジルイソシアヌレートを挙げることができる。 As the (A) epoxy resin used in the present invention, those generally used in epoxy resin molding materials for encapsulating electronic components can be used, and are not particularly limited. For example, phenol novolac type epoxy resin, orthocresol novolak Epoxidized novolak resins of phenols and aldehydes, including epoxy resins, bisphenol A, bisphenol F, bisphenol S, diglycidiethers such as alkyl-substituted biphenols, polyamines such as diaminodiphenylmethane, isocyanuric acid and epichlorohydrin There are glycidylamine type epoxy resins obtained by reaction, linear aliphatic epoxy resins obtained by oxidizing olefinic bonds with peracids such as peracetic acid, and alicyclic epoxy resins. Combined use It may be. In addition, it is preferable that the epoxy resin used is relatively uncolored, and examples of such an epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, and triglycidyl isocyanate. Nurate can be mentioned.
上記（Ｂ）硬化剤としては、エポキシ樹脂と反応するものであれば、特に制限なく用いることができるが、比較的着色のないものが好ましい。例えば、酸無水物系硬化剤、フェノール系硬化剤などが挙げられる。酸無水物系硬化剤としては、例えば、無水フタル酸、無水マレイン酸、無水トリメリット酸、無水ピロメリット酸、ヘキサヒドロ無水フタル酸、テトラヒドロ無水フタル酸、無水メチルナジック酸、無水ナジック酸、無水グルタル酸、メチルヘキサヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸などが挙げられる。これら酸無水物系硬化剤の中では、無水フタル酸、へキサヒドロ無水フタル酸、テトラヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸を用いることが好ましい。酸無水物系硬化剤は、その分子量が、１４０〜２００程度のものが好ましく、また、無色ないし淡黄色の酸無水物が好ましい。 As said (B) hardening | curing agent, if it reacts with an epoxy resin, it can be used without a restriction | limiting especially, However, The thing without a coloring is preferable. For example, an acid anhydride curing agent, a phenol curing agent, and the like can be given. Examples of the acid anhydride curing agent include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methyl nadic anhydride, nadic anhydride, glutaric anhydride. Examples include acid, methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, and the like. Among these acid anhydride curing agents, phthalic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, and methylhexahydrophthalic anhydride are preferably used. The acid anhydride curing agent preferably has a molecular weight of about 140 to 200, and is preferably a colorless or light yellow acid anhydride.
これらの硬化剤は単独で用いても、二種以上併用しても良い。エポキシ樹脂と、硬化剤との配合割合は、エポキシ樹脂中のエポキシ基１当量に対して、硬化剤におけるエポキシ基と反応可能な活性基（酸無水基または水酸基）が０．５〜１．５当量となるような割合であることが好ましく、０．７〜１．２当量となるような割合であることがより好ましい。活性基が０．５当量未満の場合には、エポキシ樹脂組成物の硬化速度が遅くなるとともに、得られる硬化体のガラス転移温度が低くなる場合があり、一方、１．５当量を超える場合には、耐湿性が低下する場合がある。 These curing agents may be used alone or in combination of two or more. The mixing ratio of the epoxy resin and the curing agent is such that the active group (acid anhydride group or hydroxyl group) capable of reacting with the epoxy group in the curing agent is 0.5 to 1.5 with respect to 1 equivalent of the epoxy group in the epoxy resin. The ratio is preferably equivalent, and more preferably 0.7 to 1.2 equivalent. When the active group is less than 0.5 equivalent, the curing rate of the epoxy resin composition is slowed, and the glass transition temperature of the resulting cured product may be lowered. The moisture resistance may be reduced.
上記（Ｃ）硬化促進剤としては、特に限定されるものではなく、例えば、１，８−ジアザ−ビシクロ（５，４，０）ウンデセン−７、トリエチレンジアミン、トリ−２，４，６−ジメチルアミノメチルフェノールなどの３級アミン類、２−エチル−４−メチルイミダゾール、２−メチルイミダゾールなどのイミダゾール類、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレート、テトラ−ｎ−ブチルホスホニウム−ｏ，ｏ−ジエチルホスホロジチオエートなどのリン化合物、４級アンモニウム塩、有機金属塩類、およびこれらの誘導体などが挙げられる。これらは単独で使用してもよく、あるいは、併用してもよい。これら硬化促進剤の中では、３級アミン類、イミダゾール類、リン化合物を用いることが好ましい。 The (C) curing accelerator is not particularly limited, and examples thereof include 1,8-diaza-bicyclo (5,4,0) undecene-7, triethylenediamine, tri-2,4,6-dimethyl. Tertiary amines such as aminomethylphenol, imidazoles such as 2-ethyl-4-methylimidazole and 2-methylimidazole, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetra-n-butylphosphonium-o, o- Examples thereof include phosphorus compounds such as diethyl phosphorodithioate, quaternary ammonium salts, organometallic salts, and derivatives thereof. These may be used alone or in combination. Among these curing accelerators, it is preferable to use tertiary amines, imidazoles, and phosphorus compounds.
硬化促進剤の含有率は、エポキシ樹脂に対して、０．０１〜８．０重量％であることが好ましく、より好ましくは、０．１〜３．０重量％である。硬化促進剤の含有率が、０．０１重量％未満では、充分な硬化促進効果を得られない場合があり、また、８．０重量％を超えると、得られる硬化体に変色が見られる場合がある。 It is preferable that the content rate of a hardening accelerator is 0.01 to 8.0 weight% with respect to an epoxy resin, More preferably, it is 0.1 to 3.0 weight%. When the content of the curing accelerator is less than 0.01% by weight, a sufficient curing acceleration effect may not be obtained. When the content exceeds 8.0% by weight, discoloration is observed in the obtained cured product. There is.
上記（Ｄ）無機充填剤としては、例えば、シリカ、アルミナ、酸化マグネシウム、酸化アンチモン、水酸化アルミニウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウムなどを挙げることができ、単独でも、併用しても構わない。熱伝導性、光反射特性、成型性、難燃性の点からは、シリカ、アルミナ、酸化アンチモン、水酸化アルミニウムのうちの２種以上の混合物であることが好ましい。また、無機充填剤の粒径は、特に限定されるものではないが、白色顔料とのパッキング効率を考慮すると、平均粒径が１〜１００μｍの範囲であることが好ましい。 Examples of the inorganic filler (D) include silica, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, barium sulfate, magnesium carbonate, and barium carbonate, and may be used alone or in combination. . From the viewpoint of thermal conductivity, light reflection characteristics, moldability, and flame retardancy, a mixture of two or more of silica, alumina, antimony oxide, and aluminum hydroxide is preferable. Further, the particle size of the inorganic filler is not particularly limited, but it is preferable that the average particle size is in the range of 1 to 100 μm in consideration of the packing efficiency with the white pigment.
上記（Ｅ）白色顔料としては、無機中空粒子のものを用いることが好ましく、例えば、珪酸ソーダガラス、アルミ珪酸ガラス、硼珪酸ソーダガラス、アルミナ、シラス等を挙げることができ、単独でも、併用しても構わない。なお、中空粒子とは略球状の粒子内部が空洞になっているものを指し、０．５〜３μｍ程度の均一な厚みの膜（外殻）で形成されているものであることが好ましい。また、白色顔料の粒径は、平均粒径が１〜５０μｍの範囲にあることが好ましい。平均粒径が１μｍ未満であると粒子が凝集しやすく分散性が悪くなる傾向にあり、５０μｍを超えると反射特性が十分に得られなくなる傾向にある。 As the above (E) white pigment, those having inorganic hollow particles are preferably used. For example, sodium silicate glass, aluminum silicate glass, borosilicate soda glass, alumina, shirasu and the like can be used alone or in combination. It doesn't matter. The hollow particles refer to those in which the inside of a substantially spherical particle is hollow, and are preferably formed of a film (outer shell) having a uniform thickness of about 0.5 to 3 μm. The white pigment preferably has an average particle size in the range of 1 to 50 μm. When the average particle size is less than 1 μm, the particles tend to aggregate and the dispersibility tends to deteriorate, and when the average particle size exceeds 50 μm, sufficient reflection characteristics tend not to be obtained.
上記（Ｄ）無機充填剤と上記（Ｅ）白色顔料の合計量は、樹脂組成物全体に対して、７０体積％〜８５体積％の範囲であることが好ましい。この合計量が７０体積％未満であると光反射特性が不十分になる恐れがあり、８５体積％を超えると樹脂組成物の成型性が悪くなり、光半導体搭載用基板の作製が困難となる。 The total amount of the (D) inorganic filler and the (E) white pigment is preferably in the range of 70% by volume to 85% by volume with respect to the entire resin composition. If this total amount is less than 70% by volume, the light reflection characteristics may be insufficient, and if it exceeds 85% by volume, the moldability of the resin composition is deteriorated, making it difficult to produce a substrate for mounting an optical semiconductor. .
上記（Ｆ）カップリング剤としては、特に限定されないが、例えば、シラン系カップリング剤やチタネート系カップリング剤等を用いることができ、シランカップリング剤としては、例えば、エポキシシラン系、アミノシラン系、カチオニックシラン系、ビニルシラン系、アクリルシラン系、メルカプトシラン系、およびこれらの複合系等を用いることができる。カップリング剤の種類や処理条件は特に限定しないが、カップリング剤の配合量は５重量％以下であることが好ましい。 Although it does not specifically limit as said (F) coupling agent, For example, a silane coupling agent, a titanate coupling agent, etc. can be used, As an silane coupling agent, an epoxysilane type, an aminosilane type, for example Cationic silane, vinyl silane, acryl silane, mercapto silane, and composites thereof can be used. The type and treatment conditions of the coupling agent are not particularly limited, but the amount of coupling agent is preferably 5% by weight or less.
また、本発明の樹脂組成物には、必要に応じて、酸化防止剤、離型剤、イオン補足剤等の添加剤を添加してもよい。 Moreover, you may add additives, such as antioxidant, a mold release agent, and an ion supplement agent, to the resin composition of this invention as needed.
以上のような成分を含有する本発明の樹脂組成物は、熱硬化前、室温（約２５℃）において固体であり、好ましくは加圧成形可能であり、熱硬化後の、波長８００ｎｍ〜３５０ｎｍにおける光反射率が８０％以上である。上記加圧成形は、例えば、室温（約２５℃）において、０．５〜２ＭＰａ、１〜５秒程度の条件下で行うことができればよい。また、上記光反射率が８０％未満であると、光半導体装置の輝度向上に十分寄与できない傾向がある。より好ましくは、光反射率は９０％以上である。 The resin composition of the present invention containing the above components is solid at room temperature (about 25 ° C.) before thermosetting, preferably press-moldable, and after thermosetting at a wavelength of 800 nm to 350 nm. The light reflectance is 80% or more. The pressure molding may be performed, for example, at room temperature (about 25 ° C.) under conditions of 0.5 to 2 MPa and about 1 to 5 seconds. Further, if the light reflectance is less than 80%, there is a tendency that it cannot sufficiently contribute to the improvement in luminance of the optical semiconductor device. More preferably, the light reflectance is 90% or more.
熱硬化後の本発明の樹脂組成物は、その熱伝導率が１〜１０Ｗ／ｍＫの範囲であることが好ましい。この熱伝導率が１Ｗ／ｍＫ未満であると光半導体素子から発生する熱を十分に逃がすことができず、封止樹脂等を劣化させてしまう恐れがある。 The resin composition of the present invention after heat curing preferably has a thermal conductivity in the range of 1 to 10 W / mK. If the thermal conductivity is less than 1 W / mK, the heat generated from the optical semiconductor element cannot be sufficiently released, and the sealing resin or the like may be deteriorated.
本発明の光半導体素子搭載用基板は、光半導体素子搭載領域となる凹部が１つ以上形成されており、少なくとも前記凹部の内周側面が本発明の熱硬化性光反射用樹脂組成物からなることを特徴とするものである。本発明の光半導体素子搭載用基板の一実施形態を図１に示す。 The substrate for mounting an optical semiconductor element of the present invention has one or more recesses to be an optical semiconductor element mounting region, and at least the inner peripheral side surface of the recess is made of the thermosetting light reflecting resin composition of the present invention. It is characterized by this. One embodiment of a substrate for mounting an optical semiconductor element of the present invention is shown in FIG.
本発明の光半導体素子搭載用基板の製造方法は、特に限定されないが、例えば、本発明の熱硬化性光反射用樹脂組成物をトランスファー成型により成型し、製造することができる。より具体的には、例えば、図２（ａ）に示すように、金属箔から打ち抜きやエッチング等の公知の方法により金属配線１０５を形成し、ついで、該金属配線１０５を所定形状の金型３０１に配置し（図２（ｂ））、金型３０１の樹脂注入口３００から本発明の樹脂組成物を注入し、これを好ましくは金型温度１７０〜１９０℃で６０〜１２０秒、アフターキュア温度１２０℃〜１８０℃で１〜３時間の条件にて熱硬化させた後、金型３０１を外し、硬化した樹脂組成物からなるリフレクター１０３に周囲を囲まれてなる光半導体素子搭載領域（凹部）２００の所定位置に、電気めっきによりＮｉ／銀めっき１０４を施すことで製造することができる（図２（ｃ））。 Although the manufacturing method of the optical semiconductor element mounting substrate of this invention is not specifically limited, For example, the thermosetting light reflection resin composition of this invention can be shape | molded and manufactured by transfer molding. More specifically, for example, as shown in FIG. 2A, a metal wiring 105 is formed from a metal foil by a known method such as punching or etching, and then the metal wiring 105 is formed into a mold 301 having a predetermined shape. (FIG. 2 (b)), and the resin composition of the present invention is injected from the resin injection port 300 of the mold 301. After thermosetting at 120 ° C. to 180 ° C. for 1 to 3 hours, the mold 301 is removed, and an optical semiconductor element mounting region (recessed portion) surrounded by the reflector 103 made of the cured resin composition It can be manufactured by applying Ni / silver plating 104 to a predetermined position of 200 by electroplating (FIG. 2C).
また、本発明の光半導体装置は、例えば、図３および図４に示すように、本発明の光半導体素子搭載用基板１１０の光半導体素子搭載領域（凹部）２００の所定位置に光半導体素子１００を搭載し、該光半導体素子１００と金属配線１０５とをボンディングワイヤ１０２やはんだバンプ１０７などの公知の方法により電気的に接続した後、公知の蛍光体１０６を含む透明封止樹脂１０１により該光半導体素子１００を覆うことで製造することができる。 Further, for example, as shown in FIGS. 3 and 4, the optical semiconductor device of the present invention has an optical semiconductor element 100 at a predetermined position of an optical semiconductor element mounting region (recessed portion) 200 of the optical semiconductor element mounting substrate 110 of the present invention. The optical semiconductor element 100 and the metal wiring 105 are electrically connected by a known method such as a bonding wire 102 or a solder bump 107, and then the light is transmitted by a transparent sealing resin 101 containing a known phosphor 106. It can be manufactured by covering the semiconductor element 100.
以下、本発明を実施例によって詳述する。 Hereinafter, the present invention will be described in detail by way of examples.
＜光反射用樹脂組成物の作製＞
下記表１に示す組成の材料を混練温度２０〜３０℃、混練時間１０分の条件でロール混練し、実施例１〜３、比較例１および２の光反射用樹脂組成物を作製した。
※エポキシ樹脂：トリグリシジルイソシアヌレート（エポキシ当量１００、日産化学社製、ＴＥＰＩＣ−Ｓ）、硬化剤：ヘキサヒドロ無水フタル酸（新日本理化製、リカシッドＨＨ）、硬化促進剤：テトラ−ｎ−ブチルホスホニウム−ｏ，ｏ−ジエチルホスホロジチオエート（日本化学工業社製、ヒシリコーンＰＸ−４ＥＴ）、無機充填剤：溶融シリカ（平均粒径２０μｍ、電気化学工業社製、ＦＢ−９５０）、アルミナ（平均粒径１μｍ、アドマッテクス社製、ＡＯ−８０２）、カップリング剤：エポキシシラン（東レダウコーニング社製、ＳＨ６０４０）、酸化防止剤：９，１０−ジヒドロ−９−オキサ−１０−ホスファフェナントレン−１０−オキシド（三光株式会社製、ＨＣＡ）、白色顔料：ほう珪酸ガラスＡ（平均粒径２７μｍ、住友３Ｍ社製、グラスバブルズＳ６０ＨＳ）、ほう珪酸ガラスＢ（平均粒径１０μｍ、旭硝子社製、ファインパールＨＳＮ−７Ｈ）、ほう珪酸ガラスＣ（平均粒径５μｍ、東海工業製、セルスターＸ−１００）、ほう珪酸ガラスＤ（平均粒径１３５μｍ、住友３Ｍ社製、グラスバブルズＫ１）
<Preparation of resin composition for light reflection>
The materials having the compositions shown in Table 1 below were roll-kneaded under conditions of a kneading temperature of 20 to 30 ° C. and a kneading time of 10 minutes to prepare the light reflecting resin compositions of Examples 1 to 3 and Comparative Examples 1 and 2.
＜光反射率の測定＞
各実施例及び各比較例の光反射用樹脂組成物を、金型温度１８０℃、キュア時間９０秒の条件でトランスファー成形を行った後、１５０℃の温度で２時間ポストキュアを行うことによって厚み１．０ｍｍのテストピースを作製した。ついで、各テストピースの、波長３５０〜８００ｎｍにおける光反射率を積分球型分光光度計Ｖ−５７０型（日本分光株式会社製）を用いて測定した。また、１５０℃、７２時間熱処理後の各テストピースの光反射特性も合わせて評価した。評価基準は下記のとおりである。結果を表２に示す。
（光反射率の評価基準）
○：光反射率８０％以上
△：光反射率７０％以上、８０％未満
×：光反射率７０％未満
<Measurement of light reflectance>
The thickness of the resin composition for light reflection of each example and each comparative example was obtained by performing transfer molding at a temperature of 150 ° C. for 2 hours after transfer molding under conditions of a mold temperature of 180 ° C. and a curing time of 90 seconds. A 1.0 mm test piece was prepared. Subsequently, the light reflectance in the wavelength of 350-800 nm of each test piece was measured using the integrating sphere type spectrophotometer V-570 type (made by JASCO Corporation). The light reflection characteristics of each test piece after heat treatment at 150 ° C. for 72 hours were also evaluated. The evaluation criteria are as follows. The results are shown in Table 2.
(Evaluation criteria for light reflectance)
○: Light reflectance 80% or more Δ: Light reflectance 70% or more, less than 80% ×: Light reflectance 70% or less
＜タブレット作製＞
各実施例及び各比較例の光反射用樹脂組成物について、室温（２５℃）でタブレット成型できるものを○、タブレット成型できないものを×として評価した。なお、タブレットの成型は、ＭＴＶ−Ｉ−３７（（株）丸七鉄工所製、商品名）を用い、０．７ＭＰａ、２秒の条件で行った。結果を表２に示す。
About the resin composition for light reflection of each Example and each comparative example, what can be tablet-molded at room temperature (25 degreeC) was evaluated as (circle) and what cannot be tablet-molded as x. The tablet was molded using MTV-I-37 (manufactured by Marunouchi Iron Works, trade name) under conditions of 0.7 MPa and 2 seconds. The results are shown in Table 2.
表２に示したように、各実施例は各比較例と比べて、反射特性、作業性（タブレット成型性）に優れている。したがって、本発明に係る熱硬化性光反射用樹脂組成物を用いると、硬化後、可視光から近紫外光領域において高い反射率を有する光半導体素子搭載用基板を効率的に得ることができる。 As shown in Table 2, each example is superior in reflection characteristics and workability (tablet moldability) as compared with each comparative example. Therefore, when the thermosetting light reflecting resin composition according to the present invention is used, an optical semiconductor element mounting substrate having a high reflectance in the visible to near-ultraviolet region can be efficiently obtained after curing.
１００・・・・・光半導体素子（ＬＥＤ素子）
１０１・・・・・（透明）封止樹脂
１０２・・・・・ボンディングワイヤ
１０３・・・・・リフレクター
１０４・・・・・Ｎｉ／Ａｇめっき
１０５・・・・・金属配線
１０６・・・・・蛍光体
１０７・・・・・はんだバンプ
１１０・・・・・光半導体素子搭載用基板
２００・・・・・光半導体素子搭載領域（凹部）
３００・・・・・樹脂注入口
３０１・・・・・金型
４００・・・・・ＬＥＤ素子
４０１・・・・・ワイヤボンド
４０２・・・・・透明封止樹脂
４０３・・・・・リフレクタ
４０４・・・・・リード
４０５・・・・・蛍光体
４０６・・・・・ダイボンド材
100 ... Optical semiconductor element (LED element)
101 (transparent) sealing resin 102 ... bonding wire 103 ... reflector 104 ... Ni / Ag plating 105 ... metal wiring 106 ... · Phosphor 107 ··· Solder bump 110 ··· Optical semiconductor element mounting substrate 200 ··· Optical semiconductor element mounting region (recess)
300 ... Resin injection port 301 ... Mold 400 ... LED element 401 ... Wire bond 402 ... Transparent sealing resin 403 ... Reflector 404 ··· Lead 405 ··· Phosphor 406 ··· Die bond material
Claims (17)
エポキシ樹脂、硬化剤、無機充填剤、及び白色顔料を含有し、
前記エポキシ樹脂と前記硬化剤との配合割合が、前記エポキシ樹脂中のエポキシ基１当量に対して、前記硬化剤におけるエポキシ基と反応可能な活性基が０．５〜１．５当量となる割合であり、
前記無機充填剤と前記白色顔料の合計量が、熱硬化性光反射用樹脂組成物全体に対して７０〜８５体積％であり、
熱硬化前には室温（２５℃）で加圧成型可能である、
熱硬化性光反射用樹脂組成物。 A thermosetting light reflecting resin composition used for forming at least an inner peripheral side surface of an optical semiconductor element mounting substrate on which one or more concave parts to be an optical semiconductor element mounting area are formed. ,
Containing epoxy resin, curing agent, inorganic filler, and white pigment,
The proportion of the epoxy resin and the curing agent is such that the active group capable of reacting with the epoxy group in the curing agent is 0.5 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin. And
The total amount of the inorganic filler and the white pigment is 70 to 85% by volume with respect to the entire thermosetting light reflecting resin composition,
Before thermosetting, pressure molding is possible at room temperature (25 ° C).
A thermosetting resin composition for light reflection.
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