JP2007235085A - Method of manufacturing package substrate for packaging optical semiconductor element and method of manufacturing optical semiconductor device using the same - Google Patents
Method of manufacturing package substrate for packaging optical semiconductor element and method of manufacturing optical semiconductor device using the same Download PDFInfo
- Publication number
- JP2007235085A JP2007235085A JP2006198489A JP2006198489A JP2007235085A JP 2007235085 A JP2007235085 A JP 2007235085A JP 2006198489 A JP2006198489 A JP 2006198489A JP 2006198489 A JP2006198489 A JP 2006198489A JP 2007235085 A JP2007235085 A JP 2007235085A
- Authority
- JP
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- Prior art keywords
- optical semiconductor
- semiconductor element
- manufacturing
- mounting
- package substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 104
- 230000003287 optical effect Effects 0.000 title claims abstract description 98
- 239000000758 substrate Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 238000004806 packaging method and process Methods 0.000 title abstract 4
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000011342 resin composition Substances 0.000 claims abstract description 31
- 238000001721 transfer moulding Methods 0.000 claims abstract description 7
- 229920005989 resin Polymers 0.000 claims description 42
- 239000011347 resin Substances 0.000 claims description 42
- 239000003822 epoxy resin Substances 0.000 claims description 22
- 229920000647 polyepoxide Polymers 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 16
- 239000012463 white pigment Substances 0.000 claims description 14
- 239000003795 chemical substances by application Substances 0.000 claims description 13
- 239000011256 inorganic filler Substances 0.000 claims description 11
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 8
- 239000007822 coupling agent Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 claims description 6
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 5
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 5
- 239000000395 magnesium oxide Substances 0.000 claims description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 5
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 5
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 claims description 4
- 239000001095 magnesium carbonate Substances 0.000 claims description 4
- 229910000021 magnesium carbonate Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 5
- 238000001723 curing Methods 0.000 description 25
- 239000010410 layer Substances 0.000 description 20
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- -1 peracetic acid Chemical class 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 150000008065 acid anhydrides Chemical class 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 2
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 2
- 235000010354 butylated hydroxytoluene Nutrition 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 150000003018 phosphorus compounds Chemical class 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- LTVUCOSIZFEASK-MPXCPUAZSA-N (3ar,4s,7r,7as)-3a-methyl-3a,4,7,7a-tetrahydro-4,7-methano-2-benzofuran-1,3-dione Chemical compound C([C@H]1C=C2)[C@H]2[C@H]2[C@]1(C)C(=O)OC2=O LTVUCOSIZFEASK-MPXCPUAZSA-N 0.000 description 1
- KNDQHSIWLOJIGP-UMRXKNAASA-N (3ar,4s,7r,7as)-rel-3a,4,7,7a-tetrahydro-4,7-methanoisobenzofuran-1,3-dione Chemical compound O=C1OC(=O)[C@@H]2[C@H]1[C@]1([H])C=C[C@@]2([H])C1 KNDQHSIWLOJIGP-UMRXKNAASA-N 0.000 description 1
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 1
- BSYJHYLAMMJNRC-UHFFFAOYSA-N 2,4,4-trimethylpentan-2-ol Chemical compound CC(C)(C)CC(C)(C)O BSYJHYLAMMJNRC-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- FKBMTBAXDISZGN-UHFFFAOYSA-N 5-methyl-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1C(C)CCC2C(=O)OC(=O)C12 FKBMTBAXDISZGN-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- 241001050985 Disco Species 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000004018 acid anhydride group Chemical group 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- FPVGTPBMTFTMRT-NSKUCRDLSA-L fast yellow Chemical compound [Na+].[Na+].C1=C(S([O-])(=O)=O)C(N)=CC=C1\N=N\C1=CC=C(S([O-])(=O)=O)C=C1 FPVGTPBMTFTMRT-NSKUCRDLSA-L 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- VANNPISTIUFMLH-UHFFFAOYSA-N glutaric anhydride Chemical compound O=C1CCCC(=O)O1 VANNPISTIUFMLH-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical class S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
本発明は、光半導体素子と蛍光体などの波長変換手段とを組み合わせた光半導体装置を製造するのに有用な光半導体素子搭載用パッケージ基板の製造方法に関する。 The present invention relates to a method for manufacturing a package substrate for mounting an optical semiconductor element useful for manufacturing an optical semiconductor device in which an optical semiconductor element and a wavelength conversion means such as a phosphor are combined.
近年、電子機器の小型化、軽量化、高性能化、多機能化に伴い、電子部品を基板上に高密度に実装することが行われている。高密度に実装するための電子部品としては、例えば、基板上の配線パターンにリフロー半田付け等により接続することが可能なＳＭＤ（Ｓｕｒｆａｃｅ ｍｏｕｎｔｅｄ ｄｅｖｉｃｅ）が広く用いられている（例えば、特許文献１参照）。 In recent years, electronic components have been mounted on a substrate with high density as electronic devices have been reduced in size, weight, performance, and functionality. As an electronic component for mounting at high density, for example, SMD (Surface Mounted Device) that can be connected to a wiring pattern on a substrate by reflow soldering or the like is widely used (for example, see Patent Document 1). ).
このような電子部品の一例であるＬＥＤ（Ｌｉｇｈｔ Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅ：発光ダイオード）は、光半導体素子と蛍光体を組み合わせた光半導体装置であり、省電力で寿命が長い発光装置として注目されている。 An LED (Light Emitting Diode), which is an example of such an electronic component, is an optical semiconductor device in which an optical semiconductor element and a phosphor are combined, and has attracted attention as a light-emitting device with low power consumption and long life.
ＳＭＤ型ＬＥＤのパッケージ基板について、図面に基づいてその概要を説明する。図４は一般的なＳＭＤ型ＬＥＤの斜視図である。図４において、１はＬＥＤ素子搭載用パッケージ基板であり、配線基板２、樹脂層４およびこれらを固着させるための接着シート５からなる。配線基板２の上面には搭載されるＬＥＤ素子１０を接続するための一対の接続端子が形成されており、各端子には銀めっき等の表面処理が施されている。また、樹脂層４には、ＬＥＤ素子１０の搭載領域となるカップ形状の貫通穴４ｄ（上部開口４ａ、下部開口４ｂおよび側面４ｃからなる凹部）が形成されており、当該穴の内周面は、その底面に搭載されたＬＥＤ素子１０が発する光を反射させ上方へ導くリフレクタ−としての役割を果たす。また、接着シート５は上記貫通穴４ｄの下部開口４ｂに対応する部分が取り除かれている。
The outline | summary of the package substrate of SMD type LED is demonstrated based on drawing. FIG. 4 is a perspective view of a general SMD type LED. In FIG. 4, 1 is a package substrate for LED element mounting, which comprises a
また、このようなＳＭＤ型ＬＥＤは、通常、図５に示すように、複数のＬＥＤ素子がマトリックス状に実装された配線基板１２上に、当該複数のＬＥＤ素子の搭載位置に対応したカップ形状の貫通穴を有する樹脂層板（リフレクタ−）１４を、当該複数のＬＥＤ素子の搭載位置に対応した穴１５ａが形成されている接着シート１５をはさんで、加熱加圧して接着した後、図６に示す２方向のダイシングライン２０に沿って複数のＳＭＤ型ＬＥＤを個片に切り離すことで得ることができる。このような製造法によれば、ＳＭＤ型ＬＥＤを多数個同時に作製することができる。
In addition, as shown in FIG. 5, such an SMD type LED usually has a cup shape corresponding to the mounting position of the plurality of LED elements on the
しかしながら、上記した従来のＳＭＤ型ＬＥＤの製造方法では、貫通穴を有する樹脂層板を作製する工程、穴を有する接着シートを作製する工程、樹脂層板と接着シートとＬＥＤ素子を搭載した配線基板を位置合わせして一体化する工程といった複数の工程やこれに伴う複数の部材が必要となる。 However, in the above-described conventional SMD type LED manufacturing method, a step of producing a resin layer plate having a through hole, a step of producing an adhesive sheet having a hole, a wiring substrate on which the resin layer plate, the adhesive sheet, and the LED element are mounted A plurality of processes, such as a process of aligning and integrating the components, and a plurality of members associated therewith are required.
また、ＬＥＤ用パッケージ基板における樹脂層板を、耐熱性の高い熱可塑性樹脂を用い、射出成型により製造することが、例えば、特許文献２〜４に開示されているが、４００ｍｍ２のマトリックス状の大型の樹脂層板を一括成型した場合、線膨張率の違いによる応力で反りが発生し易く、その後の実装工程を進めることが困難となる場合がある等の課題があった。また、一般に使用されているリフレクター材料は、酸化チタンを顔料として用いているため、発光波長が短波長領域になると急激にその反射率が低下してしまう。また、紫外線による劣化が原因で可視領域の光に対しても反射率の低下が起こることが課題となっている。
上記を鑑みて、本発明は、リードタイムの短縮、使用する部材や工程の低減による生産性の向上、低コスト化が可能な光半導体素子搭載用パッケージ基板の製造方法およびこれを用いた光半導体装置の製造方法を提供することを目的とする。 In view of the above, the present invention provides a method for manufacturing a package substrate for mounting an optical semiconductor element capable of reducing lead time, improving productivity by reducing members and processes to be used, and reducing costs, and an optical semiconductor using the same. An object is to provide a method for manufacturing a device.
また、本発明は、硬化後の、可視光から近紫外光の反射率が高い光反射用熱硬化性樹脂組成物を用いた光半導体素子搭載用パッケージ基板の製造方法およびこれを用いた光半導体装置の製造方法を提供することを目的とする。 The present invention also relates to a method for producing a package substrate for mounting an optical semiconductor element using a thermosetting resin composition for light reflection having high reflectivity from visible light to near ultraviolet light after curing, and an optical semiconductor using the same An object is to provide a method for manufacturing a device.
本発明は、下記（１）〜（１０）に記載の事項をその特徴とするものである。 The present invention is characterized by the following items (1) to (10).
（１）光半導体素子搭載領域となる凹部が２つ以上形成された光反射用熱硬化性樹脂組成物層を配線基板上に有する光半導体素子搭載用パッケージ基板の製造方法であって、前記光反射用熱硬化性樹脂組成物層をトランスファー成型により形成することを特徴とする、光半導体素子搭載用パッケージ基板の製造方法。 (1) A method for manufacturing a package substrate for mounting an optical semiconductor element, having a light-reflective thermosetting resin composition layer formed with two or more recesses to be an optical semiconductor element mounting region on a wiring board, wherein the light A method for producing a package substrate for mounting an optical semiconductor element, wherein the reflective thermosetting resin composition layer is formed by transfer molding.
（２）前記光反射用熱硬化性樹脂組成物が、（Ａ）エポキシ樹脂、（Ｂ）硬化剤、（Ｃ）硬化促進剤、（Ｄ）無機充填剤、（Ｅ）白色顔料及び（Ｆ）カップリング剤を必須成分として含み、熱硬化後の、波長８００ｎｍ〜３５０ｎｍにおける光反射率が８０％以上であり、熱硬化前には室温（２５℃）で加圧成型可能なものであることを特徴とする、上記（１）に記載の光半導体素子搭載用パッケージ基板の製造方法。 (2) The light-reflective thermosetting resin composition comprises (A) an epoxy resin, (B) a curing agent, (C) a curing accelerator, (D) an inorganic filler, (E) a white pigment, and (F). It contains a coupling agent as an essential component, has a light reflectance at a wavelength of 800 nm to 350 nm after thermosetting of 80% or more, and can be pressure-molded at room temperature (25 ° C.) before thermosetting. The manufacturing method of a package substrate for mounting an optical semiconductor element according to (1), which is characterized in that
（３）前記（Ｄ）無機充填剤が、シリカ、アルミナ、酸化マグネシウム、酸化アンチモン、水酸化アルミニウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウムからなる群の中から選ばれる少なくとも１種以上であることを特徴とする、上記（２）に記載の光半導体素子搭載用パッケージ基板の製造方法。 (3) The (D) inorganic filler is at least one selected from the group consisting of silica, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, barium sulfate, magnesium carbonate, and barium carbonate. The method for producing a package substrate for mounting an optical semiconductor element according to (2), which is characterized in that
（４）前記（Ｅ）白色顔料が、無機中空粒子であることを特徴とする、上記（２）または（３）に記載の光半導体素子搭載用パッケージ基板の製造方法。 (4) The method for producing a package substrate for mounting an optical semiconductor element according to the above (2) or (3), wherein the (E) white pigment is inorganic hollow particles.
（５）前記（Ｅ）白色顔料の平均粒径が、１μｍ〜５０μｍの範囲にあることを特徴とする、上記（２）〜（４）のいずれか１項に記載の光半導体素子搭載用パッケージ基板の製造方法。 (5) The package for mounting an optical semiconductor element according to any one of (2) to (4) above, wherein an average particle diameter of the (E) white pigment is in a range of 1 μm to 50 μm. A method for manufacturing a substrate.
（６）前記（Ｄ）無機充填剤と前記（Ｅ）白色顔料の合計量が、前記光反射用熱硬化性樹脂組成物全体に対して７０体積％〜８５体積％の範囲であることを特徴とする上記（２）〜（５）のいずれか１項に記載の光半導体素子搭載用パッケージ基板の製造方法。 (6) The total amount of the (D) inorganic filler and the (E) white pigment is in the range of 70% by volume to 85% by volume with respect to the entire thermosetting resin composition for light reflection. The manufacturing method of the package substrate for mounting an optical semiconductor element according to any one of (2) to (5) above.
（７）前記配線基板が、リードフレーム、プリント配線板、フレキシブル配線板、およびメタルベース配線板のいずれかであることを特徴とする、上記（１）〜（６）のいずれか１項に記載の光半導体素子搭載用パッケージ基板の製造方法。 (7) The wiring board according to any one of (1) to (6), wherein the wiring board is any one of a lead frame, a printed wiring board, a flexible wiring board, and a metal base wiring board. Of manufacturing a package substrate for mounting an optical semiconductor element.
（８）上記（１）〜（７）のいずれか１項に記載の製造方法によって得られる光半導体素子搭載用パッケージ基板に形成された２つ以上の凹部の各底面に、光半導体素子を搭載する工程、および前記光半導体素子を封止樹脂により覆う工程、を有することを特徴とする光半導体装置の製造方法。 (8) An optical semiconductor element is mounted on each bottom surface of two or more recesses formed in an optical semiconductor element mounting package substrate obtained by the manufacturing method according to any one of (1) to (7) above. And a step of covering the optical semiconductor element with a sealing resin.
（９）前記樹脂封止工程後、前記光半導体素子を１つ有する光半導体装置単体に分割する工程、をさらに有することを特徴とする、上記（８）に記載の光半導体装置の製造方法。 (9) The method for manufacturing an optical semiconductor device according to (8), further including a step of dividing the optical semiconductor device into a single optical semiconductor device having one optical semiconductor element after the resin sealing step.
（１０）前記分割する工程が、ダイシングにより行われることを特徴とする、上記（９）に記載の光半導体装置の製造方法。 (10) The method for manufacturing an optical semiconductor device according to (9), wherein the dividing step is performed by dicing.
本発明によれば、従来必要であった複数の工程をトランスファー成型の一つの工程で行うことが可能となるため、リードタイムの短縮、使用する部材や工程の低減による生産性の向上、低コスト化が可能な光半導体素子搭載用パッケージ基板の製造方法および半導体装置の製造方法を提供することが可能となり、また、反りが少ない光半導体素子搭載用パッケージ基板や半導体装置を提供することが可能となる。 According to the present invention, since it is possible to perform a plurality of processes that were conventionally required in one process of transfer molding, the lead time is shortened, the productivity is improved by reducing the members and processes to be used, and the cost is low. It is possible to provide a method for manufacturing a package substrate for mounting an optical semiconductor element and a method for manufacturing a semiconductor device, and to provide a package substrate for mounting an optical semiconductor element and a semiconductor device with less warpage. Become.
また、上記（２）〜（６）に記載したような光反射用熱硬化性樹脂組成物を用いて凹部を形成することで、硬化後の、可視光から近紫外光の反射率が特に優れた光半導体素子搭載用パッケージ基板や光半導体装置を提供することが可能となる。 Moreover, the reflectance of visible light to near-ultraviolet light after curing is particularly excellent by forming a recess using the thermosetting resin composition for light reflection as described in the above (2) to (6). It is possible to provide an optical semiconductor element mounting package substrate and an optical semiconductor device.
本発明は、配線基板と、当該配線基板上に形成され、光半導体素子搭載領域となる凹部（貫通孔）が所定位置に２つ以上形成されている光反射用熱硬化性樹脂組成物層とを有する光半導体素子搭載用パッケージ基板の製造方法であって、上記光反射用熱硬化性樹脂組成物層をトランスファー成型により一括形成することをその特徴とするものである。 The present invention relates to a wiring board and a thermosetting resin composition layer for light reflection formed on the wiring board and having two or more recesses (through holes) to be an optical semiconductor element mounting region at a predetermined position. A method for producing a package substrate for mounting an optical semiconductor element, characterized in that the thermosetting resin composition layer for light reflection is collectively formed by transfer molding.
上記トランスファー成型による形成について、より具体的には、例えば、上記配線基板として、図１（ａ）に示すような、金属配線４０１を有するプリント配線板４００を用い、これを図１（ｂ）に示すように、所定形状の金型４１１内に配置し、金型４１１の樹脂注入口４１０から光反射用熱硬化性樹脂組成物を注入する。ついで、注入した光反射用熱硬化性樹脂組成物を好ましくは、金型温度１７０℃〜１９０℃で６０秒〜１２０秒、アフターキュア温度１２０℃〜１８０℃で１時間〜３時間の条件で熱硬化させた後、金型４１１を外すことで、凹部（光半導体素子搭載領域）４２０が２つ以上形成された光反射用熱硬化性樹脂組成物層（リフレクター）４２１を配線基板上に有する光半導体素子搭載用パッケージ基板４３０を得ることができる（図１（ｃ）、（ｄ））。また、凹部底面の、光半導体素子が接続される端子表面に電気めっき等によりＮｉ／Ａｇめっき１０４を施すこともできる。また、凹部の形状は、特に限定されないが、搭載されたＬＥＤ素子１０が発する光を反射させて上方へ導くようなカップ形状（円錐台形状）であることが望ましい。
More specifically, with respect to the formation by the transfer molding, for example, a printed
上記光反射用熱硬化性樹脂組成物としては、公知のものを使用することも可能であるが、好ましくは、熱硬化後の、波長８００ｎｍ〜３５０ｎｍにおける光反射率が８０％以上であり、熱硬化前には室温（２５℃）で加圧成型可能な光反射用熱硬化性樹脂組成物を用い、より好ましくは、（Ａ）エポキシ樹脂、（Ｂ）硬化剤、（Ｃ）硬化促進剤、（Ｄ）無機充填剤、（Ｅ）白色顔料及び（Ｆ）カップリング剤を必須成分として含み、かつ熱硬化後の、波長８００ｎｍ〜３５０ｎｍにおける光反射率が８０％以上であり、熱硬化前には室温（２５℃）で加圧成型可能な光反射用熱硬化性樹脂組成物を用いる。上記光反射率が８０％未満であると、光半導体装置の輝度向上に十分寄与できない傾向がある。より好ましくは、光反射率が９０％以上である。また、上記加圧成形は、例えば、室温（約２５℃）において、０．５ＭＰａ〜２ＭＰａの圧力で、１秒〜５秒程度の条件下で行うことができればよい。また、本発明において用いる光反射用熱硬化性樹脂組成物の熱伝導率は、１Ｗ／ｍＫ以上であることが好ましい。この熱伝導率が１Ｗ／ｍＫ未満であると光半導体素子から発生する熱を十分に逃がすことができず、封止樹脂等を劣化させてしまう恐れがある。 As the light-reflective thermosetting resin composition, a known one can be used. Preferably, the light reflectivity at a wavelength of 800 nm to 350 nm after heat curing is 80% or more, and heat Prior to curing, a thermosetting resin composition for light reflection that can be pressure-molded at room temperature (25 ° C.) is used. More preferably, (A) an epoxy resin, (B) a curing agent, (C) a curing accelerator, (D) An inorganic filler, (E) a white pigment, and (F) a coupling agent are included as essential components, and the light reflectivity at a wavelength of 800 nm to 350 nm after thermosetting is 80% or more, and before thermosetting Uses a thermosetting resin composition for light reflection that can be pressure-molded at room temperature (25 ° C.). If the light reflectance is less than 80%, there is a tendency that it cannot sufficiently contribute to the improvement of the luminance of the optical semiconductor device. More preferably, the light reflectance is 90% or more. Moreover, the said press molding should just be able to be performed on the conditions of about 1 second-about 5 second at room temperature (about 25 degreeC) and the pressure of 0.5 Mpa-2 Mpa. Moreover, it is preferable that the heat conductivity of the thermosetting resin composition for light reflection used in the present invention is 1 W / mK or more. If the thermal conductivity is less than 1 W / mK, the heat generated from the optical semiconductor element cannot be sufficiently released, and the sealing resin or the like may be deteriorated.
上記（Ａ）エポキシ樹脂としては、電子部品封止用エポキシ樹脂成形材料で一般に使用されているものを用いることができ、特に制限はないが、例えば、フェノールノボラック型エポキシ樹脂、オルソクレゾールノボラック型エポキシ樹脂をはじめとするフェノール類とアルデヒド類のノボラック樹脂をエポキシ化したもの、ビスフェノールＡ、ビスフェノールＦ、ビスフェノールＳ、アルキル置換ビフェノール等のジグリシジエーテル、ジアミノジフェニルメタン、イソシアヌル酸等のポリアミンとエピクロルヒドリンの反応により得られるグリシジルアミン型エポキシ樹脂、オレフィン結合を過酢酸等の過酸で酸化して得られる鎖状脂肪族エポキシ樹脂及び脂環族エポキシ樹脂などがあり、これらは単独でも、２種以上併用してもよい。また、使用するエポキシ樹脂は、比較的着色のないものであることが好ましく、そのようなエポキシ樹脂としては、例えば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、トリグリシジルイソシアヌレートを挙げることができる。 As said (A) epoxy resin, what is generally used by the epoxy resin molding material for electronic component sealing can be used, Although there is no restriction | limiting in particular, For example, a phenol novolak type epoxy resin, an ortho cresol novolak type epoxy Resin and other phenols and aldehydes novolak resins epoxidized, bisphenol A, bisphenol F, bisphenol S, diglycidiethers such as alkyl-substituted biphenols, diaminodiphenylmethane, isocyanuric acid and other polyamines and epichlorohydrin There are glycidylamine type epoxy resins obtained, chain aliphatic epoxy resins and alicyclic epoxy resins obtained by oxidizing olefinic bonds with peracids such as peracetic acid, and these can be used alone or in combination of two or more. Also good. Moreover, it is preferable that the epoxy resin to be used is relatively uncolored, and examples of such an epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, and triglycidyl. Mention may be made of isocyanurates.
上記（Ｂ）硬化剤としては、エポキシ樹脂と反応するものであれば、特に制限はないが、例えば、酸無水物系硬化剤、フェノール系硬化剤などが挙げられ、比較的着色のないものであることが好ましい。酸無水物系硬化剤としては、例えば、無水フタル酸、無水マレイン酸、無水トリメリット酸、無水ピロメリット酸、ヘキサヒドロ無水フタル酸、テトラヒドロ無水フタル酸、無水メチルナジック酸、無水ナジック酸、無水グルタル酸、メチルヘキサヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸等が挙げられ、中でも、無水フタル酸、へキサヒドロ無水フタル酸、テトラヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸を用いることが好ましい。また、用いる酸無水物系硬化剤は、その分子量が１４０〜２００程度のものであることが好ましく、また、無色ないし淡黄色の酸無水物であることが好ましい。また、これら硬化剤は単独で用いても、二種以上併用して用いてもよい。エポキシ樹脂と硬化剤との配合割合は、エポキシ樹脂中のエポキシ基１当量に対して、硬化剤におけるエポキシ基と反応可能な活性基（酸無水基又は水酸基）が０．５当量〜１．５当量となるような割合であることが好ましく、０．７当量〜１．２当量となるような割合であることがより好ましい。活性基が０．５当量未満の場合は、エポキシ樹脂組成物の硬化速度が遅くなるとともに、得られる硬化体のガラス転移温度が低くなる場合があり、一方、１．５当量を超える場合は、耐湿性が低下する場合がある。 The (B) curing agent is not particularly limited as long as it reacts with an epoxy resin, and examples thereof include an acid anhydride curing agent and a phenol curing agent. Preferably there is. Examples of the acid anhydride curing agent include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methyl nadic anhydride, nadic anhydride, glutaric anhydride. Examples thereof include acid, methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, etc. Among them, it is preferable to use phthalic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, and methylhexahydrophthalic anhydride. The acid anhydride curing agent to be used preferably has a molecular weight of about 140 to 200, and is preferably a colorless or light yellow acid anhydride. These curing agents may be used alone or in combination of two or more. The mixing ratio of the epoxy resin and the curing agent is such that the active group (acid anhydride group or hydroxyl group) capable of reacting with the epoxy group in the curing agent is 0.5 equivalent to 1.5 to 1 equivalent of the epoxy group in the epoxy resin. The ratio is preferably equivalent, and more preferably 0.7 to 1.2 equivalents. When the active group is less than 0.5 equivalent, the curing rate of the epoxy resin composition is slowed, and the glass transition temperature of the resulting cured product may be low, whereas when it exceeds 1.5 equivalent, Moisture resistance may be reduced.
上記（Ｃ）硬化促進剤としては、特に制限はなく、例えば、１，８−ジアザ−ビシクロ（５，４，０）ウンデセン−７、トリエチレンジアミン、トリ−２，４，６−ジメチルアミノメチルフェノール等の３級アミン類、２−エチル−４−メチルイミダゾール、２−メチルイミダゾールなどのイミダゾール類、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレート、テトラ−ｎ−ブチルホスホニウム−ｏ，ｏ−ジエチルホスホロジチオエート等のリン化合物、４級アンモニウム塩、有機金属塩類及びこれらの誘導体などが挙げられる。これらは単独で使用してもよく、又は併用して用いてもよい。これら硬化促進剤の中では、３級アミン類、イミダゾール類、リン化合物を用いることが好ましい。硬化促進剤の含有率は、エポキシ樹脂に対して、０．０１重量％〜８．０重量％であることが好ましく、より好ましくは、０．１重量％〜３．０重量％であることがより好ましい。硬化促進剤の含有率が、０．０１重量％未満では、充分な硬化促進効果を得られない場合があり、また、８．０重量％を超えると、得られる硬化体に変色が見られる場合がある。 The (C) curing accelerator is not particularly limited, and examples thereof include 1,8-diaza-bicyclo (5,4,0) undecene-7, triethylenediamine, tri-2,4,6-dimethylaminomethylphenol. Tertiary amines such as 2-ethyl-4-methylimidazole, imidazoles such as 2-methylimidazole, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetra-n-butylphosphonium-o, o-diethylphosphoro Examples include phosphorus compounds such as dithioates, quaternary ammonium salts, organometallic salts, and derivatives thereof. These may be used alone or in combination. Among these curing accelerators, it is preferable to use tertiary amines, imidazoles, and phosphorus compounds. The content of the curing accelerator is preferably 0.01% by weight to 8.0% by weight and more preferably 0.1% by weight to 3.0% by weight with respect to the epoxy resin. More preferred. When the content of the curing accelerator is less than 0.01% by weight, a sufficient curing acceleration effect may not be obtained. When the content exceeds 8.0% by weight, discoloration is observed in the obtained cured product. There is.
上記（Ｄ）無機充填材としては、例えば、シリカ、アルミナ、酸化マグネシウム、酸化アンチモン、水酸化アルミニウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウム等を挙げることができ、これらは単独でも、併用して用いてもよい。熱伝導性、光反射特性、成型性、難燃性の点からは、シリカ、アルミナ、酸化アンチモン、水酸化アルミニウムのうちの２種以上の混合物であることが好ましい。また、無機充填材の粒径は、特に制限はないが、白色顔料とのパッキング効率を考慮すると、平均粒径が１μｍ〜１００μｍの範囲であることが好ましい。 Examples of the inorganic filler (D) include silica, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, barium sulfate, magnesium carbonate, and barium carbonate. These may be used alone or in combination. May be. From the viewpoint of thermal conductivity, light reflection characteristics, moldability, and flame retardancy, a mixture of two or more of silica, alumina, antimony oxide, and aluminum hydroxide is preferable. The particle size of the inorganic filler is not particularly limited, but it is preferable that the average particle size is in the range of 1 μm to 100 μm in view of the packing efficiency with the white pigment.
上記（Ｅ）白色顔料としては、例えば、アルミナ、酸化マグネシウム、酸化アンチモン、水酸化アルミニウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウム、無機中空粒子等を挙げることができ、これらは単独でも、併用して用いてもよい。無機中空粒子としては、珪酸ソーダガラス、アルミ珪酸ガラス、ホウケイ酸ソーダガラス、シラス等がある。熱伝導性、光反射特性の点からは、アルミナ、酸化マグネシウム、無機中空粒子又はそれらの混合物であることが好ましい。また、白色顔料の粒径は、平均粒径が１〜５０μｍの範囲にあることが好ましい。平均粒径が１μｍ未満であると粒子が凝集しやすく、分散性が悪くなる傾向があり、５０μｍを超えると反射特性が十分に得られなくなる傾向がある。 Examples of the white pigment (E) include alumina, magnesium oxide, antimony oxide, aluminum hydroxide, barium sulfate, magnesium carbonate, barium carbonate, and inorganic hollow particles. These may be used alone or in combination. It may be used. Examples of inorganic hollow particles include sodium silicate glass, aluminum silicate glass, borosilicate soda glass, and shirasu. From the viewpoint of thermal conductivity and light reflection characteristics, alumina, magnesium oxide, inorganic hollow particles, or a mixture thereof is preferable. The white pigment preferably has an average particle size in the range of 1 to 50 μm. When the average particle size is less than 1 μm, the particles tend to aggregate and the dispersibility tends to deteriorate, and when the average particle size exceeds 50 μm, sufficient reflection characteristics tend not to be obtained.
上記（Ｄ）無機充填材と上記（Ｅ）白色顔料の合計量は、光反射用熱硬化性樹脂組成物全体に対して、７０〜８５体積％の範囲であることが好ましい。この合計量が７０体積％未満であると熱伝導性や光反射特性が不十分になる恐れがあり、８５体積％を超えると樹脂組成物の成型性が悪くなり、光半導体素子搭載用基板の作製が困難となる傾向がある。 The total amount of the (D) inorganic filler and the (E) white pigment is preferably in the range of 70 to 85% by volume with respect to the entire thermosetting resin composition for light reflection. If this total amount is less than 70% by volume, the thermal conductivity and light reflection characteristics may be insufficient. If it exceeds 85% by volume, the moldability of the resin composition will be deteriorated, and the optical semiconductor element mounting substrate will be deteriorated. Production tends to be difficult.
上記（Ｆ）カップリング剤としては、特に制限はないが、例えば、シラン系カップリング剤、チタネート系カップリング剤等を用いることができ、シランカップリング剤としては、例えば、エポキシシラン系、アミノシラン系、カチオニックシラン系、ビニルシラン系、アクリルシラン系、メルカプトシラン系及びこれらの複合系などを用いることができる。カップリング剤の種類や処理条件は特に制限はないが、カップリング剤の配合量は、光反射用熱硬化性樹脂組成物全体に対して、５重量％以下であることが好ましい。 The (F) coupling agent is not particularly limited. For example, a silane coupling agent, a titanate coupling agent, or the like can be used. Examples of the silane coupling agent include epoxy silanes and aminosilanes. , Cationic silanes, vinyl silanes, acrylic silanes, mercapto silanes, and composites thereof can be used. The type of the coupling agent and the treatment conditions are not particularly limited, but the amount of the coupling agent is preferably 5% by weight or less with respect to the entire thermosetting resin composition for light reflection.
また、上記光反射用熱硬化性樹脂組成物には、必要に応じて、酸化防止剤、離型剤、イオン補足剤等の添加剤を添加してもよい。 Moreover, you may add additives, such as antioxidant, a mold release agent, and an ion supplement agent, to the said thermosetting resin composition for light reflections as needed.
また、本発明において用いる上記配線基板としては、公知のものを使用することができ、特に限定されないが、例えば、上記プリント配線のほかに、リードフレーム、フレキシブル配線板、メタルベース配線板等を用いることができる。 The wiring board used in the present invention may be a known one, and is not particularly limited. For example, in addition to the printed wiring, a lead frame, a flexible wiring board, a metal base wiring board, or the like is used. be able to.
上記プリント配線は、例えば、銅箔付プリプレグに対して、公知の手法を用いて回路となる配線を形成した後、絶縁用の樹脂を回路上に形成して得ることができる。その際、絶縁用の樹脂及びプリプレグに含浸する樹脂には、ＬＥＤ素子からの光を効率よく反射できるように白色の絶縁樹脂を用いることが望ましい。また、上記リードフレームは、例えば、銅、４２アロイ等の基板を公知の手法を用いて回路を形成して得ることができる。その際、基板表面にはＬＥＤ素子からの光を効率よく反射できるように銀めっきを施しておくことが望ましい。また、上記フレキシブル配線板は、例えば、銅箔付のポリイミド基板を公知の手法を用いて回路となる配線を形成した後、絶縁用の樹脂を回路上に形成して得ることができる。その際、絶縁用の樹脂にはＬＥＤ素子からの光を効率よく反射できるように白色の絶縁樹脂を用いることが望ましい。また、上記メタルベース配線板は、例えば、銅やアルミニウムの基板に絶縁層を形成し、公知の手法を用いて回路となる配線を形成した後、絶縁用の樹脂を回路上に形成して得ることができる。その際、金属基板上の絶縁層及び回路絶縁用の樹脂にはＬＥＤ素子からの光を効率よく反射できるように白色の絶縁樹脂を用いることが望ましい。 The printed wiring can be obtained, for example, by forming a wiring to be a circuit on a prepreg with a copper foil using a known method and then forming an insulating resin on the circuit. At that time, it is desirable to use a white insulating resin as the insulating resin and the resin impregnated in the prepreg so that the light from the LED element can be efficiently reflected. The lead frame can be obtained, for example, by forming a circuit on a substrate such as copper or 42 alloy using a known technique. At that time, it is desirable to apply silver plating to the surface of the substrate so that light from the LED element can be efficiently reflected. The flexible wiring board can be obtained, for example, by forming a wiring to be a circuit on a polyimide substrate with a copper foil using a known technique and then forming an insulating resin on the circuit. At this time, it is desirable to use a white insulating resin as the insulating resin so that the light from the LED element can be efficiently reflected. The metal base wiring board is obtained, for example, by forming an insulating layer on a copper or aluminum substrate, forming a wiring to be a circuit using a known technique, and then forming an insulating resin on the circuit. be able to. At that time, it is desirable to use a white insulating resin for the insulating layer on the metal substrate and the resin for circuit insulation so that the light from the LED element can be efficiently reflected.
本発明の光半導体装置の製造方法は、上記本発明の光半導体素子搭載用パッケージ基板の製造方法により得られた光半導体素子搭載用パッケージ基板に形成された２つ以上の凹部の各底面に、光半導体素子を搭載する工程、および当該光半導体素子を透明な封止樹脂により覆う工程、を有することをその特徴とするものである。 The manufacturing method of the optical semiconductor device of the present invention includes a method of manufacturing the optical semiconductor element mounting package substrate of the present invention, wherein each of the bottom surfaces of the two or more recesses formed on the optical semiconductor element mounting package substrate is It is characterized by having a step of mounting the optical semiconductor element and a step of covering the optical semiconductor element with a transparent sealing resin.
より具体的には、例えば、図１（ｃ）および（ｄ）に示す光半導体素子搭載用パッケージ基板４３０の凹部４２０の各底面の所定位置に、例えば、図２および図３に示すように、光半導体素子１００を搭載し、該光半導体素子１００と金属配線１０５とをボンディングワイヤ１０２、はんだバンプ１０７等の公知の方法で電気的に接続した後、公知の蛍光体１０６を含む透明な封止樹脂１０１により該光半導体素子１００を覆うことで本発明の光半導体装置を製造する。なお、図１（ｃ）および（ｄ）には、光半導体素子を搭載する凹部が９箇所形成された場合について示されているが、本発明がこれに限定されないことはいうまでもない。
More specifically, for example, at a predetermined position on each bottom surface of the
また、上記樹脂封止工程後に、マトリックス状である上記光半導体装置を、ダイシング、レーザ加工、ウォータージェット加工、金型加工等の公知の方法により分割することで、光半導体素子を１つ有する光半導体装置単体（ＳＭＤ型光半導体装置）を得ることができる。好ましくは、図６に示すような、マトリックス状の光半導体装置にダンシングラインを形成し、これに沿ってダイシングする。 Further, after the resin sealing step, the optical semiconductor device having a matrix shape is divided by a known method such as dicing, laser processing, water jet processing, mold processing, etc., so that light having one optical semiconductor element is obtained. A single semiconductor device (SMD type optical semiconductor device) can be obtained. Preferably, a dancing line is formed in a matrix-shaped optical semiconductor device as shown in FIG. 6, and dicing is performed along this.
（実施例１）
＜プリント配線板＞
基板厚さ０．６ｍｍ及び銅箔厚さ１８μｍのガラス布−エポキシ樹脂含浸両面銅張り積層板であるＭＣＬ−Ｅ−６７９（日立化成工業（株）製、商品名）に、穴あけ、無電解めっきを行い、通常のサブトラクト法によって回路を形成し、銅の回路の保護にソルダーレジストを形成し、プリント配線板を作製した。
Example 1
<Printed wiring board>
MCL-E-679 (trade name, manufactured by Hitachi Chemical Co., Ltd.), which is a double-sided copper-clad laminate impregnated with glass cloth-epoxy resin impregnated with a substrate thickness of 0.6 mm and copper foil thickness of 18 μm, electroless plating Then, a circuit was formed by a normal subtracting method, a solder resist was formed to protect the copper circuit, and a printed wiring board was produced.
＜光反射用熱硬化性樹脂組成物＞
下記組成の材料を混練温度２０〜３０℃、混練時間１０分の条件でロール混練を行い、光反射用熱硬化性樹脂組成物を作製した。
<Thermosetting resin composition for light reflection>
A material having the following composition was roll kneaded under conditions of a kneading temperature of 20 to 30 ° C. and a kneading time of 10 minutes to prepare a thermosetting resin composition for light reflection.
（Ａ）エポキシ樹脂：トリグリシジルイソシアヌレート
１００重量部（エポキシ当量１００）
（Ｂ）硬化剤：ヘキサヒドロ無水フタル酸
１４０重量部
（Ｃ）硬化促進剤：テトラ−ｎ−ブチルホスホニウム−ｏ，ｏ−ジエチルホスホロジチオエート
２．４重量部
（Ｄ）無機充填剤：溶融シリカ（平均粒径２０μｍ）
６００重量部
アルミナ（平均粒径１μｍ）
８９０重量部
（Ｅ）白色顔料：ホウケイ酸ソーダガラス中空粒子（３Ｍ製、Ｓ６０ＨＳ、平均粒径２７μｍ）
１８５重量部
（Ｆ）カップリング剤：エポキシシラン
１９重量部
（Ｇ）酸化防止剤：９，１０−ジヒドロ−９−オキサ−１０−ホスファフェナントレン−１０−オキシド
１重量部
(A) Epoxy resin: triglycidyl isocyanurate
100 parts by weight (epoxy equivalent 100)
(B) Curing agent: hexahydrophthalic anhydride
140 parts by weight (C) curing accelerator: tetra-n-butylphosphonium-o, o-diethyl phosphorodithioate
2.4 parts by weight (D) inorganic filler: fused silica (
600 parts by weight
Alumina (average particle size 1μm)
890 parts by weight (E) white pigment: sodium borosilicate glass hollow particles (3M, S60HS, average particle size 27 μm)
185 parts by weight (F) coupling agent: epoxy silane
19 parts by weight (G) antioxidant: 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide
1 part by weight
＜光半導体素子搭載用パッケージ基板の成型＞
上記で得たプリント配線板を図１（ｂ）に示すような形状の金型に位置あわせして取り付け、上記で得た光反射用熱硬化性樹脂組成物を注入した後、金型温度１８０℃、９０秒間、６．９ＭＰａの条件でトランスファー成型機（藤和精機（株）製、ＴＥＰ１５０）により加熱加圧成型し、複数の凹部を有する、１６００ｍｍ２のマトリックス状の光半導体素子搭載用パッケージ基板を作製した。
<Molding of package substrate for mounting optical semiconductor elements>
The printed wiring board obtained above is positioned and attached to a mold having a shape as shown in FIG. 1 (b), and the thermosetting resin composition for light reflection obtained above is injected. 1600 mm 2 matrix-shaped substrate for mounting an optical semiconductor element having a plurality of recesses by heat and pressure molding using a transfer molding machine (TEP150, manufactured by Towa Seiki Co., Ltd.) at 90 ° C. for 90 seconds under conditions of 6.9 MPa Was made.
＜光半導体装置の製造＞
上記で得た光半導体素子搭載用パッケージ基板に形成された各凹部底面の回路上に、ＬＥＤ素子をダイボンド材（日立化成工業（株）製、ＥＮ４６２０Ｋ）にて固定し、１５０℃で１時間加熱することによりＬＥＤ素子を端子上に固着させた。ついで、金線でＬＥＤ素子と端子を電気的に接続した後、下記組成の透明封止樹脂をポッティングにより各凹部に流し込み、１５０℃で２時間加熱硬化し、ＬＥＤ素子を樹脂封止した。
<Manufacture of optical semiconductor devices>
The LED element is fixed with a die bond material (EN4620K, manufactured by Hitachi Chemical Co., Ltd.) on the circuit at the bottom of each recess formed on the package substrate for mounting an optical semiconductor element obtained above, and heated at 150 ° C. for 1 hour. As a result, the LED element was fixed on the terminal. Next, after electrically connecting the LED element and the terminal with a gold wire, a transparent sealing resin having the following composition was poured into each concave portion by potting and heat-cured at 150 ° C. for 2 hours to seal the LED element with resin.
（透明封止樹脂組成）
・水素添加ビスフェノールＡ型エポキシ樹脂：デナコールＥＸ２５２（ナガセケムテックス社製）
９０重量部
・脂環式エポキシ樹脂：ＣＥＬ−２０２１Ｐ（ダイセル化学社製）
１０重量部
・４−メチルヘキサヒドロフタル酸無水物ＨＮ−５５００Ｅ（日立化成工業製）
９０重量部
・２、６ジターシャルブチル−４−メチルフェノールＢＨＴ
０．４重量部
・２−エチル−４−メチルイミダゾール
０．９重量部
(Transparent sealing resin composition)
・ Hydrogenated bisphenol A epoxy resin: Denacol EX252 (manufactured by Nagase ChemteX Corporation)
90 parts by weight / alicyclic epoxy resin: CEL-2021P (manufactured by Daicel Chemical Industries)
10 parts by weight 4-methylhexahydrophthalic anhydride HN-5500E (manufactured by Hitachi Chemical)
90 parts by weight, 2,6 di-tert-butyl-4-methylphenol BHT
0.4 parts by weight 2-ethyl-4-methylimidazole
0.9 parts by weight
＜ダイシング＞
上記透明封止樹脂を硬化させた後、マトリックス状の光半導体装置をダイシング装置（（株）ディスコ製、ＤＡＤ３８１）により個片化し、ＬＥＤ素子を１つ有する単体の光半導体装置（ＳＭＤ型ＬＥＤ）を複数製造した。
<Dicing>
After the transparent sealing resin is cured, the matrix-shaped optical semiconductor device is separated into pieces by a dicing device (DAD381, manufactured by DISCO Corporation), and a single optical semiconductor device (SMD type LED) having one LED element. Several were manufactured.
（実施例２）
プリント配線板の代わりにリードフレームを用いた以外は、実施例１と同様にして光半導体装置を製造した。
(Example 2)
An optical semiconductor device was manufactured in the same manner as in Example 1 except that a lead frame was used instead of the printed wiring board.
（実施例３）
プリント配線板の代わりにメタルコア基板を用いた以外は、実施例１と同様にして光半導体装置を製造した。
(Example 3)
An optical semiconductor device was manufactured in the same manner as in Example 1 except that a metal core substrate was used instead of the printed wiring board.
（実施例４）
プリント配線板の代わりにフレキシブル基板を用いた以外は、実施例１と同様にして光半導体装置を製造した。
Example 4
An optical semiconductor device was manufactured in the same manner as in Example 1 except that a flexible substrate was used instead of the printed wiring board.
（実施例５）
プリント配線板の代わりに、複数のＬＥＤ素子をマトリックス状態で動作させるための回路を形成した配線基板を用い、また、樹脂封止後のダイシングを行わなかった以外は、実施例１と同様にして、マトリックス状の光半導体装置を製造した。
(Example 5)
Instead of the printed wiring board, a wiring board on which a circuit for operating a plurality of LED elements in a matrix state was used, and dicing after resin sealing was not performed. A matrix-shaped optical semiconductor device was manufactured.
（比較例１）
光反射用樹脂組成物として、熱可塑性のポリフタルアミドを用い、これを射出成型することにより（金型温度１００〜２２０℃、射出圧力４９０〜１１２０ｋｇ／ｃｍ２、保持時間１０〜４０秒、背圧７〜７０ｋｇ／ｃｍ２、サイクル時間２０〜６０秒、押出器ノズル温度３３０〜３６０℃、バレル先端温度３２０〜３５０℃、スクリュー回転速度２０〜６０回転／分）、凹部を有する樹脂層板（リフレクター）を作製した。
(Comparative Example 1)
As a resin composition for light reflection, thermoplastic polyphthalamide is used and injection molded (
（比較例２）
光反射用樹脂組成物として、熱可塑性のポリフタルアミドを用い、これを比較例１と同様の条件で射出成型することにより作製した複数の凹部を有する樹脂層板（リフレクター）と、複数のＬＥＤを所定位置に搭載したプリント配線板との間に、上記樹脂基板の貫通穴の位置に合わせて穴開けした接着シート（日立化成工業（株）製、ＡＳ−３０００）を位置合わせして挟み、これを１７０℃、０．２ＭＰａ、６０分の条件で加熱加圧硬化することより一体化し、光半導体装置を製造した。
(Comparative Example 2)
A resin layer plate (reflector) having a plurality of recesses produced by injection molding of thermoplastic polyphthalamide under the same conditions as in Comparative Example 1 as a resin composition for light reflection, and a plurality of LEDs The adhesive sheet (Hitachi Chemical Industry Co., Ltd., AS-3000) drilled in accordance with the position of the through hole of the resin substrate is sandwiched between the printed wiring board mounted at a predetermined position, This was integrated by heating and pressure curing under conditions of 170 ° C., 0.2 MPa, 60 minutes to produce an optical semiconductor device.
実施例１〜５により製造された光半導体素子搭載用パッケージ基板は、その反りが０．５ｍｍ未満であり、また、当該パッケージ基板に形成された複数の凹部底面に光半導体素子を搭載し、これを樹脂封止して製造したマトリックス状の半導体装置からは、そのダイシングによりＳＭＤ型ＬＥＤを効率的に多数製造することが可能であった。 The package substrate for mounting an optical semiconductor element manufactured according to Examples 1 to 5 has a warpage of less than 0.5 mm, and the optical semiconductor element is mounted on the bottom surfaces of a plurality of recesses formed on the package substrate. From a matrix semiconductor device manufactured by resin-sealing, it was possible to efficiently manufacture a large number of SMD LEDs by dicing.
一方、比較例１で製造した凹部を有する樹脂層板は、大きな反りが発生し、マトリックス状樹脂層板（リフレクター）とプリント配線板の間に剥離が生じ、その後の実装工程等を行うことが困難であった。また、比較例２においては、実施例と同様の光半導体装置を製造することができたが、複数の工程と複数の部材を用いる必要があるため、実施例と比較して効率が悪く、経済的ではない。 On the other hand, the resin layer board having the recesses produced in Comparative Example 1 is greatly warped, and peeling occurs between the matrix-like resin layer board (reflector) and the printed wiring board, making it difficult to perform subsequent mounting processes and the like. there were. In Comparative Example 2, an optical semiconductor device similar to that of the example could be manufactured. However, since it is necessary to use a plurality of steps and a plurality of members, the efficiency is lower than that of the example and the economy is low. Not right.
１ ＬＥＤ素子搭載用パッケージ基板
２ 配線基板
４ 樹脂層（リフレクタ−）
４ａ 上部開口
４ｂ 下部開口
４ｃ 側面
４ｄ 貫通穴
５ 接着シート
１０ ＬＥＤ素子
１２ ＬＥＤ素子実装済み配線基板
１４ 樹脂層板（リフレクタ−）
１５ 接着シート
１５ａ 穴
２０ ダイシングライン
１００ 光半導体素子（ＬＥＤ素子）
１０１ 封止樹脂
１０２ ボンディングワイヤ
１０３ リフレクター
１０４ Ｎｉ／Ａｇめっき
１０５ 金属配線
１０６ 蛍光体
１０７ はんだバンプ
１１０ 光半導体装置
４００ プリント配線板
４０１ 金属配線
４０２ 層間接続穴
４０３ ソルダーレジスト
４１０ 樹脂注入口
４１１ 金型
４２０ 凹部（光半導体素子搭載領域）
４２１ 光反射用熱硬化性樹脂硬化物（リフレクター）
４３０ マトリックス状の光半導体素子搭載用パッケージ基板
1 LED device mounting
15
101
421 Thermosetting resin cured material for light reflection (reflector)
430 Matrix-like package substrate for mounting optical semiconductor elements
Claims (10)
前記光半導体素子を封止樹脂により覆う工程、
を有することを特徴とする光半導体装置の製造方法。 A step of mounting an optical semiconductor element on each bottom surface of two or more recesses formed on the package substrate for mounting an optical semiconductor element obtained by the manufacturing method according to claim 1, and the light A step of covering the semiconductor element with a sealing resin;
A method for manufacturing an optical semiconductor device, comprising:
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