JP5440096B2 - Optical semiconductor device manufacturing method, optical semiconductor element mounting substrate manufacturing method, and optical semiconductor device - Google Patents

Description

  The present invention relates to an optical semiconductor device manufacturing method, an optical semiconductor element mounting substrate manufacturing method, and an optical semiconductor device.

  Light emitting diodes (LEDs), which are optical semiconductor elements, are attracting attention as inexpensive and long-life elements, and are widely used in optical semiconductor devices such as various indicators, light sources, flat display devices, and liquid crystal display backlights. It is used. As a method for manufacturing an optical semiconductor device, a method of manufacturing a resin package and mounting an optical semiconductor element on the resin package is known (see, for example, Patent Document 1). The resin material used in this resin package uses a transfer molding technology that heats and melts a thermosetting resin into a cavity of a heated molding die, and forms and cures it by applying pressure. Produced. In this case, there is a plating step and an optical semiconductor element mounting step after the package is formed, and unnecessary resin burrs adhering to the lead frame may affect the plating property and wire bondability. Therefore, the process of removing the resin burr may be performed after molding (see, for example, Patent Document 2).

  As a deburring method, conventionally, abrasives such as glass beads, alumina particles, plastic beads, and other inorganic particles are mixed with water (or an aqueous solution), a high pressure is applied using a pump, and the abrasives are mixed with water. A liquid honing method in which burrs are removed by high-pressure injection onto the lead frame surface has become the mainstream.

JP 2006-140207 A JP 2004-296530 A

  However, when burrs are removed by the above-described liquid honing method, it is necessary to control the shape and amount of the abrasive, which makes it difficult to manage the abrasive. In addition, the liquid honing method requires post-processing such as cleaning and recovery of abrasives, and there is a problem in workability. Furthermore, in the liquid honing method, since an abrasive such as glass beads is used, there has been a problem that damage to the resin package and the lead frame due to the honing process is inevitable.

  The present invention has been made to solve the above-described problems, and an optical semiconductor device manufacturing method and an optical semiconductor element mounting capable of effectively removing resin burrs without damaging a resin package or a lead frame It is an object of the present invention to provide an optical semiconductor device manufactured by using the method for manufacturing an optical substrate and the method for manufacturing an optical semiconductor device.

In order to achieve the above object, the present invention provides a light reflecting layer having a plurality of through holes formed by transfer molding using a thermosetting resin composition on a wiring member, and one opening of the through hole. The step of obtaining a molded body in which a plurality of recesses formed by closing the wiring member and the resin burr formed of the thermosetting resin composition formed on the surface of the wiring member is chemically removed using a chemical solution. A step of plating the conductor member surface of the wiring member, a step of disposing the optical semiconductor element in the concave portion, and supplying a sealing resin into the concave portion in which the optical semiconductor element is disposed. providing a step, a step of curing the sealing resin, by dividing the above molded body possess obtaining a plurality of optical semiconductor device, a method for manufacturing the optical semiconductor device the drug solution is an amide-based solution To do.

  According to this manufacturing method, the resin burr can be effectively removed without damaging the resin package or the lead frame by having the step of chemically removing the resin burr using a chemical solution. Then, by sufficiently removing the resin burr without causing damage, an optical semiconductor device having good reflectivity and wire boarding property can be obtained.

  In the method for producing an optical semiconductor device according to the present invention, the chemical solution is preferably an alkaline permanganate aqueous solution, a chromic acid-sulfuric acid aqueous solution, concentrated sulfuric acid, or an amide-based solution. By using these chemical solutions, it is possible to achieve both a sufficient suppression of damage to the resin package and the lead frame and a sufficient removal of the resin burr at a high level.

In the present invention, a light reflecting layer having a plurality of through holes formed by transfer molding using a thermosetting resin composition is formed on a wiring member, and one opening of the through hole is closed with the wiring member. obtaining a plurality of recesses are formed molded body made, a resin burr made of the thermosetting resin composition generated on the surface of the wiring member, possess a step of chemically removing using a chemical solution, the The manufacturing method of the optical semiconductor element mounting board | substrate whose said chemical | medical solution is an amide type solution is provided.

  According to this manufacturing method, the resin burr can be effectively removed without damaging the substrate for mounting the optical semiconductor element by having the step of chemically removing the resin burr using a chemical solution. Then, by sufficiently removing the resin burr without damaging it, an optical semiconductor element mounting substrate with good reflectivity and wire boarding property can be obtained.

  In the method for manufacturing a substrate for mounting an optical semiconductor element of the present invention, the chemical solution is preferably any one of an alkaline permanganate aqueous solution, a chromic acid-sulfuric acid aqueous solution, concentrated sulfuric acid, or an amide-based solution. By using these chemical solutions, it is possible to achieve both a sufficient suppression of damage to the resin package and the lead frame and a sufficient removal of the resin burr at a high level.

  The present invention further provides an optical semiconductor device manufactured using the optical semiconductor device manufacturing method of the present invention. Since this optical semiconductor device is manufactured using the method for manufacturing an optical semiconductor device of the present invention, the mounting reliability of the optical semiconductor element can be improved.

  According to the present invention, an optical semiconductor device manufacturing method, an optical semiconductor element mounting substrate manufacturing method, and an optical semiconductor device capable of effectively removing resin burrs without damaging a resin package or a lead frame, and the optical semiconductor An optical semiconductor device manufactured using the device manufacturing method can be provided.

1 is a plan view showing an embodiment of an optical semiconductor device according to the present invention. It is the II-II sectional view taken on the line of the optical semiconductor device shown in FIG. It is sectional drawing which shows one Embodiment of the manufacturing method of the optical semiconductor device which concerns on this invention. FIG. 4 is a cross-sectional view showing the procedure of the subsequent step of FIG. 3. It is a top view which shows the molded object after the process of FIG. It is a top view which shows the molded object after the process of FIG. FIG. 5 is a cross-sectional view showing the procedure of the subsequent step of FIG. 4. It is sectional drawing which shows other embodiment of the process of FIG.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.

<Optical semiconductor device>
FIG. 1 is a plan view showing an embodiment of an optical semiconductor device according to the present invention. However, the sealing body is omitted in FIG. 2 is a cross-sectional view of the optical semiconductor device shown in FIG. 1 taken along line II-II.

  As shown in FIGS. 1 and 2, the optical semiconductor device 100 includes a wiring member 10, an optical semiconductor element 20, a light reflection layer 30, and a sealing body 40. The optical semiconductor device 100 is generally classified into a surface mount type (SMD type).

  As the wiring member 10, it is preferable to use a lead frame formed by a known method. For example, a lead frame such as a 42 alloy lead frame or a copper lead frame is used. The wiring member 10 has a rectangular shape, for example, and includes conductor members 14a and 14b.

  The conductor members 14a and 14b are made of metal. The conductor member 14 a is disposed from one end to the other end in the longitudinal direction of the wiring member 10 at the approximate center in the short direction of the wiring member 10. Three conductor members 14 b are arranged at each of both ends in the short direction of the wiring member 10, and each conductor member 14 b is elongated in the longitudinal direction of the wiring member 10. The respective conductor members 14b are arranged apart from each other and are arranged so as to be symmetric with respect to the conductor member 14a, apart from the conductor member 14a.

  A white resin layer 16 is disposed between the conductor member 14a and the conductor member 14b. The white resin layer 16 is formed of the same resin as the light reflection layer 30 described later.

  Three optical semiconductor elements 20 are mounted on the conductor member 14a via, for example, a die bond material (not shown), and are arranged in the longitudinal direction of the wiring member 10 apart from each other. The surface of each optical semiconductor element 20 is electrically connected by a bonding wire 18 to each of the conductor members 14b located symmetrically with the conductor member 14a interposed therebetween. The optical semiconductor element 20 emits light when power is supplied through the bonding wire 18, and the light is extracted from the light extraction surface 100 </ b> F through the sealing body 20. As the optical semiconductor element 20, elements such as a GaN blue element, a green element, a GaP green element, an orange element, and a GaAs red element can be used without particular limitation.

  The light reflecting layer 30 is a substantially rectangular parallelepiped member having a through-hole 30 a formed therein by four side walls disposed on the wiring member 10 along the outer edge portion of the wiring member 10. The through hole 30a is formed so that the opening becomes smaller from the front surface 30b to the back surface (surface on the wiring member 10 side) of the light reflecting layer 30 when the four side walls of the light reflecting layer 30 are inclined. The light reflecting layer 30 constitutes an optical semiconductor element mounting substrate together with the wiring member 10, and a recess (cavity portion) 32 is formed by closing the opening on the back side of the through hole 30 a by the wiring member 10. Has been. When the inside of the recess 32 is viewed from the surface 30 b side of the light reflecting layer 30, the three optical semiconductor elements 20 are exposed at the bottom of the recess 32. That is, the bottom of the recess 32 corresponds to the optical semiconductor element mounting region.

  The sealing body 40 is formed by supplying a light-transmitting sealing resin (translucent sealing resin) to the inside of the recess 32 and the surface 30 b of the light reflecting layer 30. Examples of the sealing resin include an epoxy resin, an acrylic resin, a urethane resin, a silicone resin, and modified resins thereof. Among them, the coloring and deterioration are suppressed, and the bonding wire 18 is disconnected due to thermal stress due to the stress relaxation effect. Since the reliability can be further improved since it is suppressed, a gel-like or rubber-like silicone resin is preferred, and a gel-like or rubber-like dimethyl silicone resin is more preferred. Examples of dimethyl silicone resins include KJR-9022X-5, KER-2600 (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.), OE-6351, JCR6115, JCR6110 (trade name, manufactured by Toray Dow Corning Co., Ltd.), XE-14. -C2042, IVS4012, IVS5022 (a product name made by Momentive Performance Materials, Inc.), etc. can be used. A phosphor may be added to the sealing resin as necessary. The elastic modulus at room temperature (25 ° C.) of the sealing resin is preferably 0.001 to 10 MPa from the viewpoint of improving heat resistance, light resistance, and stress relaxation effect. In addition, the elasticity modulus of sealing resin can be measured using the penetration (JIS K 2220 1/4 cone) and rubber hardness (JIS type A).

  Next, the thermosetting resin composition (mold material) for forming the light reflecting layer 30 will be described in detail. The thermosetting resin composition preferably contains (A) an epoxy resin, (B) a curing agent, (C) a curing accelerator, (D) an inorganic filler, and (E) a white pigment.

(A) Epoxy resin As an epoxy resin, what is generally used as an epoxy resin molding material for electronic component sealing can be used. The epoxy resin is not particularly limited. For example, a phenol novolac type epoxy resin, an orthocresol novolac type epoxy resin and other phenols and aldehyde novolak resins epoxidized, bisphenol A, bisphenol F, bisphenol S, etc. , Glycidylamine type epoxy resins obtained by reaction of polyamines such as diglycidyl ethers such as alkyl-substituted biphenols, diaminodiphenylmethane, isocyanuric acid and epichlorohydrin, linear aliphatics obtained by oxidizing olefinic bonds with peracids such as peracetic acid An epoxy resin, an alicyclic epoxy resin, etc. can be mentioned. These epoxy resins may be used independently and may use 2 or more types together. Of these epoxy resins, those having relatively little color are preferably used. For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, and triglycidyl isocyanurate are preferable.

(B) Curing agent As the curing agent, any curing agent that can react with an epoxy resin can be used without particular limitation. Examples of the curing agent include acid anhydride curing agents, isocyanuric acid derivatives, phenolic curing agents, and the like. Examples of the acid anhydride curing agent include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methyl nadic anhydride, nadic anhydride, glutaric anhydride. Acid, dimethyl glutaric anhydride, diethyl glutaric anhydride, succinic anhydride, methyl hexahydrophthalic anhydride, methyl tetrahydrophthalic anhydride, norbornene dicarboxylic anhydride, methyl norbornene dicarboxylic anhydride, norbornane dicarboxylic anhydride, methyl norbornane Dicanrubonic anhydride may be mentioned. Isocyanuric acid derivatives include 1,3,5-tris (1-carboxymethyl) isocyanurate, 1,3,5-tris (2-carboxyethyl) isocyanurate, 1,3,5-tris (3-carboxypropyl) ) Isocyanurate, 1,3-bis (2-carboxyethyl) isocyanurate and the like. Examples of phenolic curing agents include phenol novolac resins, cresol novolac resins, dicyclopentadiene modified phenol resins, paraxylene modified phenol resins, condensates of phenols with benzaldehyde, naphthyl aldehyde, etc., triphenolmethane compounds, polyfunctional phenols. Examples thereof include resins. These curing agents may be used alone or in combination of two or more.

  Among these curing agents, phthalic anhydride, trimellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, glutaric anhydride, dimethylglutaric anhydride, anhydrous Diethyl glutaric acid and 1,3,5-tris (3-carboxypropyl) isocyanurate are preferably used. The curing agent preferably has a molecular weight of about 100 to 400, and is preferably colorless or light yellow.

  50-200 mass parts is preferable with respect to 100 mass parts of epoxy resins, and, as for content of a hardening | curing agent, 100-150 mass parts is more preferable. If the content of the curing agent is less than 50 parts by mass, the curing reaction of the epoxy resin tends not to proceed sufficiently, and if it exceeds 200 parts by mass, the resulting molded product tends to discolor.

(C) Curing accelerator The curing accelerator is not particularly limited. For example, 1,8-diaza-bicyclo (5,4,0) undecene-7, triethylenediamine, tri-2,4,6. -Tertiary amines such as dimethylaminomethylphenol, imidazoles such as 2-ethyl-4methylimidazole and 2-methylimidazole, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetra-n-butylphosphonium-o, o -Phosphorus compounds such as diethyl phosphorodithioate, tetra-n-butylphosphonium-tetrafluoroborate, tetra-n-butylphosphonium-tetraphenylborate, quaternary ammonium salts, organometallic salts, and derivatives thereof . These may be used alone or in combination of two or more. Among these curing accelerators, it is preferable to use tertiary amines, imidazoles, and phosphorus compounds.

  It is preferable that content of a hardening accelerator is 0.01-10.0 mass parts with respect to 100 mass parts of epoxy resins, and 0.1-8.0 mass parts is more preferable. If the content of the curing accelerator is less than 0.01 parts by mass, a sufficient curing acceleration effect tends not to be obtained, and if it exceeds 10.0 parts by mass, the resulting molded product tends to discolor.

(D) Inorganic filler The inorganic filler is at least one selected from the group consisting of silica, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, magnesium hydroxide, barium sulfate, magnesium carbonate, and barium carbonate. In view of improving reliability, silica having low thermal expansion is more preferable.

  As the inorganic filler, aluminum hydroxide and magnesium hydroxide are preferable from the viewpoint of flame retardancy. Moreover, since aluminum hydroxide and magnesium hydroxide are white, they are preferable also from a viewpoint with little influence on a reflectance. Further, from the viewpoint of moisture resistance reliability, the content of ionic compounds in aluminum hydroxide or magnesium hydroxide is preferably small. As for content of an ionic compound (for example, Na compound), 0.2 mass% or less is preferable with respect to the whole thermosetting resin composition.

  100-2000 mass parts is preferable with respect to 100 mass parts of epoxy resins, and, as for content of an inorganic filler, 500-1500 mass parts is more preferable. If the content of the inorganic filler is less than 100 parts by mass, the strength of the material tends to decrease, and if it exceeds 2000 parts by mass, the fluidity and curability tend to be adversely affected.

  The center particle size of the inorganic filler is preferably 0.1 to 50 μm. If the center particle size is less than 0.1 μm, the particles tend to aggregate and the dispersibility tends to deteriorate, and if it exceeds 50 μm, the moldability tends to decrease.

(E) White pigment As the white pigment, titanium oxide (rutile type) is preferable from the viewpoint of improving light reflectivity. As the white pigment, inorganic hollow particles are also preferable. Examples of the inorganic hollow particles include hollow particles such as sodium silicate glass, aluminum silicate glass, sodium borosilicate glass, and shirasu.

  The center particle diameter of the white pigment is preferably 0.1 to 50 μm. If the center particle size is less than 0.1 μm, the particles tend to aggregate and the dispersibility tends to deteriorate, and if it exceeds 50 μm, the reflection characteristics tend not to be sufficiently obtained.

  100-4500 mass parts is preferable with respect to 100 mass parts of epoxy resins, and, as for content of a white pigment, 200-2000 mass parts is more preferable. When the content of the white pigment is less than 100 parts by mass, the reflectance tends to decrease, and when it exceeds 4500 parts by mass, the moldability tends to deteriorate.

  The filling amount of the white pigment is preferably 10 to 85% by volume, more preferably 50 to 85% by volume, and still more preferably 70 to 85% by volume with respect to the entire thermosetting resin composition. When the filling amount is less than 10% by volume, the light reflection property tends to be lowered, and when it exceeds 85% by volume, the moldability tends to be deteriorated.

(F) Coupling agent For the purpose of improving the dispersibility of the white pigment, the thermosetting resin composition may optionally contain a coupling agent. As coupling agents, there are silane coupling agents and titanate coupling agents, but from the viewpoint of suppressing coloring, epoxy silanes are generally superior, and a specific example is 3-glycidoxypropyltrimethoxysilane. 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and the like.

  0.1-5 mass parts is preferable with respect to 100 mass parts of epoxy resins, and, as for content of a coupling agent, 1-3 mass parts is more preferable. When the content of the coupling agent is less than 0.1 parts by mass, the fluidity tends to decrease, and when it exceeds 5 parts by mass, the curability tends to decrease or the releasability tends to deteriorate.

  In addition, an antioxidant, a light stabilizer, an ultraviolet absorber, a release agent, an ion scavenger, a flexible agent, and the like may be added as additives to the thermosetting resin composition. As the flexibilizer, acrylic resin, urethane resin, or the like is suitable.

  The light reflectance at a wavelength of 420 to 800 nm with a thickness of 1 mm of the cured product of the thermosetting resin composition is preferably 80% or more, more preferably 85% or more, and still more preferably 90% or more. If the light reflectance is less than 80%, the light emission efficiency of the optical semiconductor device tends to decrease.

  In the optical semiconductor device 100 according to the present embodiment, since the optical semiconductor element 20 disposed in the recess 32 has a simple structure in which the optical semiconductor element 20 is sealed by the sealing body 40, the molding in which the plurality of recesses 32 are formed. A method of manufacturing a plurality of optical semiconductor devices at a time by dividing a molded body using a body can be suitably applied. Therefore, an optical semiconductor device can be obtained efficiently and productivity can be significantly improved as compared with a conventional manufacturing method in which a molded body is well divided and optical semiconductor devices are manufactured one by one.

  Furthermore, since the optical semiconductor device 100 is excellent in heat resistance, light resistance, temperature cycle resistance, and reflow resistance, an optical semiconductor device suitable for a high-intensity LED package can be provided.

<Method for Manufacturing Optical Semiconductor Device>
Next, a method for manufacturing the optical semiconductor device 100 according to the present embodiment will be described with reference to FIGS. FIG. 3 is a cross-sectional view showing an embodiment of a method of manufacturing an optical semiconductor device according to the invention. FIG. 4 is a cross-sectional view showing the procedure of the subsequent process of FIG. FIG. 5 is a plan view showing the molded body after the step of FIG. FIG. 6 is a plan view showing the molded body after the step of FIG. FIG. 7 is a cross-sectional view showing the procedure of the subsequent step of FIG. FIG. 8 is a cross-sectional view showing another embodiment of the process of FIG.

  First, a circuit is formed using a known method such as a method of photoetching a copper foil to form conductor members 14a and 14b, thereby obtaining a wiring member 10 shown in FIG.

  Next, a mold 60 having a concave portion in which a plurality of light reflecting layers 30 having concave portions 32 are arranged in a matrix (for example, 10 vertical × 16 horizontal) is prepared, as shown in FIG. Then, the mold 60 is disposed on the wiring member 10. Next, a thermosetting resin composition is injected from a resin injection port (not shown) of the mold 60 to form the light reflecting layer 30 on the wiring member 10. The light reflecting layer 30 can be formed using a MAP (Mold Array Package) forming method in which the lead frame is formed into a matrix by transfer forming. After injecting the thermosetting resin composition, the thermosetting resin composition is cured by maintaining the mold temperature at 180 ° C. for 90 seconds, for example. Note that it is preferable to reduce the pressure in the mold 60 during transfer molding because the resin filling property is improved. After the light reflecting layer 30 is formed, the thermosetting resin composition may be after-cured by heating at a temperature of 120 to 180 ° C. for 1 to 3 hours, for example. As a result, as shown in FIG. 4A, a molded body 70 in which a plurality of light reflecting layers 30 each having a recess 32 is formed is formed, and a white resin layer 16 is formed between the conductor members 14a and 14b.

  At this time, as shown in FIG. 5, a resin burr 50 is generated on the surface of the wiring member 10 due to the component of the thermosetting resin composition exuding between the mold 60 and the wiring member 10 during transfer molding. It will be. Therefore, the resin burr 50 generated on the surface of the wiring member 10 is chemically removed by treatment with a chemical solution. Chemical treatment is performed by optimizing the concentration, temperature, time, post-treatment, etc. according to the type of chemical. Here, the chemical removal means that the resin burr 50 is dissolved by the action of the chemical solution or is removed from the wiring member 10 by swelling and peeling.

  The chemical solution is not particularly limited as long as it can dissolve and / or swell the resin burr 50. For example, an alkaline permanganate aqueous solution, a chromic acid-sulfuric acid aqueous solution, concentrated sulfuric acid, and an amide-based solution may be used. Can be mentioned. Among these, a low-concentration alkaline chemical solution or an acidic chemical solution is preferable from the viewpoint of achieving both removal of the resin burr 50 and suppression of damage to the wiring member 10 and the light reflection layer 30 at a high level.

  As the alkaline permanganate aqueous solution, potassium permanganate or sodium permanganate can be used. When an alkaline permanganate aqueous solution is used as the chemical solution, the concentration is preferably 1 to 70 g / L, and more preferably 1 to 40 g / L. Moreover, it is preferable that pH shall be 12-14. The treatment temperature is preferably in the range of 20 to 80 ° C, more preferably in the range of 30 to 60 ° C. The treatment time is preferably 0.5 to 10 minutes. It is preferable to perform neutralization as a post-treatment of the aqueous alkaline permanganate solution because the red coloring of permanganate can be reduced and the material can be returned to white.

  When using concentrated sulfuric acid, the sulfuric acid concentration is preferably 80% or more, more preferably 80 to 90%. Moreover, it is preferable to make processing temperature into the range of 20-30 degreeC. The treatment time is preferably 0.5 to 10 minutes. It is preferable to perform a neutralization treatment with an alkaline solution as a post-treatment after the concentrated sulfuric acid treatment because excessive dissolution of the material can be suppressed.

  When using a chromic acid-sulfuric acid aqueous solution, the chromic acid concentration is preferably 10 to 150 g / L, more preferably 10 to 100 g / L. The sulfuric acid concentration is preferably 100 to 500 g / L. The treatment temperature is preferably in the range of 20 to 45 ° C. The treatment time is preferably 0.5 to 10 minutes.

  As the amide solution, an amide solvent alone or a mixed solution of an amide solvent and an alkali is used. Examples of amide solvents include N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide and the like. Examples of the alkali include an alcohol solvent solution of an alkali metal hydroxide and a quaternary ammonium salt. When a mixed solution of an amide solvent and an alkali is used as the amide solution, the amide solvent is in the range of 50 to 99% by mass, and an alcohol solvent solution of alkali metal hydroxide (alkali metal hydroxide concentration: 0). 0.5 to 40 mass%) is in the range of 1 to 50 mass%, and it is preferable to use a mixed solution in which the quaternary ammonium salt is 0.01 to 10 mass parts with respect to 100 mass parts in total. Moreover, it is preferable that it is 20-70 degreeC, and, as for the process temperature in the case of using an amide system solution, it is more preferable to set it as 30-50 degreeC. The treatment time is preferably 0.5 to 10 minutes.

  By removing the resin burr 50 under the above-described conditions, it is possible to sufficiently remove the resin burr while sufficiently suppressing damage to the wiring member 10 and the light reflecting layer 30. Further, among the chemical solutions, the amide solution is a mild chemical solution itself, and thus damage to the wiring member 10 and the light reflection layer 30 can be more sufficiently suppressed. Furthermore, since the wall surface of the light reflecting layer 30 can be appropriately roughened by the treatment with the chemical solution, the adhesive force between the light reflecting layer 30 and the sealing body 40 can be improved.

  Next, after removing the resin burr 50, the surface of the conductor members 14a and 14b of the wiring member 10 is subjected to plating such as Ag plating or Ni / Ag plating, thereby improving the reflectivity and good wire bonding. Can be obtained.

  Subsequently, for example, a die bond material is applied onto the conductor member 14a in the recess 32, and the three optical semiconductor elements 20 are arranged side by side on the die bond material. Then, as shown in FIG. 4B, the surface of each optical semiconductor element 20 is electrically connected to the conductor member 14 b using a bonding wire 18. As a mounting method, not only a wire bond method but also a flip chip method may be used. As described above, as shown in FIGS. 6A and 6B, the three optical semiconductor elements 20 are mounted on the bottom of each recess 32 in the molded body 70.

  Next, the sealing body 40 is formed by potting as follows. That is, as shown in FIG. 7A, a sealing resin is supplied into each recess 32 to form a sealing body 40 that seals the optical semiconductor element 20.

  Next, as shown in FIG. 7B, a molded body in which a plurality of optical semiconductor devices 100 are integrally connected is divided (divided into pieces) into the recesses 32, and a plurality of optical semiconductor devices 100 shown in FIG. obtain. For the division, a known method such as dicing, laser processing, water jet processing, mold processing, or the like can be used. Thus, an optical semiconductor device (SMD type optical semiconductor device) having one or a plurality of optical semiconductor devices is obtained. Can be obtained.

  Further, in the plurality of optical semiconductor devices 100, the light reflecting layers 30 may not be integrally connected, and may be divided into the concave portions 32 in advance as shown in FIG. In this case, as shown in FIG. 8B, only the wiring member 10 is cut to obtain a plurality of optical semiconductor devices 100 shown in FIG. The light reflecting layer 30 that is divided in advance for each recess 32 can be produced by changing the shape of the mold 60.

  In the method of manufacturing the optical semiconductor device 100 according to the present embodiment, the molded body 70 in which the plurality of recesses 32 are formed is used to divide the optical semiconductor element 20, seal the optical semiconductor element 20, and divide the molded body 70. Thus, a plurality of optical semiconductor devices 100 are obtained at a time. Therefore, the molded body 70 is divided satisfactorily, and an optical semiconductor device can be obtained more efficiently than a conventional method for manufacturing an optical semiconductor device, and productivity can be significantly improved. In particular, the thermosetting resin composition includes (A) an epoxy resin, (B) a curing agent, (C) a curing accelerator, (D) an inorganic filler, and (E) a white pigment. When the light reflectance at a wavelength of 420 to 800 nm of the cured product is 80% or more, the thermosetting resin composition is easily adjusted according to the shape of the resin injection port (material input port) of the mold 60 Therefore, productivity can be further improved.

  Further, in the method of manufacturing the optical semiconductor device 100 according to the present embodiment, the resin burr 50 is chemically removed using a chemical solution, thereby effectively preventing the wiring member 10 and the light reflecting layer 30 from being damaged. The burr 50 can be removed. For this reason, it is possible to obtain an improvement in reflectivity and good wire boarding properties.

  EXAMPLES Hereinafter, although an Example explains this invention in full detail, this invention is not limited to these Examples.

( Reference Example 1)
[Preparation of thermosetting resin composition for light reflecting layer]
The thermosetting resin composition was prepared by mixing each component by the following compounding ratio (mass part), and performing roll kneading | mixing on the conditions for kneading | mixing temperature 20-50 degreeC and kneading | mixing time 10 minutes.
(A) Epoxy resin: trisglycidyl isocyanurate, 43 parts by mass (B) Curing agent: hexahydrophthalic anhydride, 53 parts by mass (C) Curing accelerator: tetra-n-butylphosphonium-o, o-diethylphospho Rosithioate, 3 parts by mass (D) Inorganic filler: fused spherical silica (center particle size: 25 μm) (manufactured by Denki Kagaku Kogyo Co., Ltd., trade name: FB-950), 418 parts by mass (D) Inorganic filler: molten Spherical silica (center particle size: 0.5 μm) (manufactured by Admatechs, trade name: SO25R), 29 parts by mass (E) White pigment: titanium oxide (center particle size: 0.21 μm) (manufactured by Ishihara Sangyo Co., Ltd., product) Name: CR-63), 222 parts by mass (F) Coupling agent: Trimethoxyepoxysilane (manufactured by Toray Dow Corning, trade name: A-187), 1.2 parts by mass In addition, (E) of white pigment The filling amount was 37.7% by volume with respect to the entire thermosetting resin composition.

[Fabrication of optical semiconductor device]
First, after a copper circuit was formed on the Cu—Fe alloy C194 by photoetching, a lead frame having a thickness of 0.15 mm was obtained.

  Next, using a transfer molding machine (manufactured by M-Tex Matsumura Co., Ltd., trade name: MF-FS01), the thermosetting resin composition prepared as described above was molded at a mold temperature of 180 ° C., a curing time of 90 seconds, and a molding pressure. Molding was performed by a MAP molding method under a condition of 6.9 MPa, and a light reflecting layer was formed on the lead frame to obtain a substrate for mounting an optical semiconductor element device. As the mold, a collective mold having 160 concave portions (cavities) arranged in a matrix of 10 vertical × 16 horizontal is used. The cavity size was 3 mm × 3 mm per unit and the depth was 0.5 mm.

  Next, resin burrs generated in the transfer molding were removed by the following deburring process. That is, an aqueous solution of potassium permanganate (concentration: 40 g / L, pH: 14, temperature: 60 ° C.) was used as a chemical solution. Was removed. . Next, a neutralization treatment was performed as a post-treatment for deburring. Here, the neutralization treatment liquid was prepared by adding concentrated sulfuric acid to deionized water and adding the solution until the pH of the aqueous solution reached 1.0. This neutralization treatment solution was used for immersion / water washing under treatment conditions of 40 ° C. for 3 minutes until the red coloration of potassium permanganate disappeared. Thereafter, Ag plating with a thickness of 3 μm was applied to the surface of the circuit (conductor member) of the substrate for mounting an optical semiconductor element device.

  Subsequently, a die bonding agent (manufactured by Hitachi Chemical Co., Ltd., trade name: EN4620K) is formed on the connecting terminal (conductor member) at the center of the lead frame exposed in each recess of the substrate for mounting an optical semiconductor element by a stamping method. Printed. Next, an optical semiconductor element (blue element, manufactured by Cree, trade name: EZ700) was placed on the die bond agent. Then, the die bond agent was heat-cured (150 ° C., 1 hour), and the optical semiconductor element was fixed on the connection terminal. And the surface of the optical semiconductor element and the connection terminal (conductor member) arrange | positioned at the side surface side of a lead frame were electrically connected using the gold wire.

  Subsequently, a gel-like silicone transparent sealing resin (manufactured by Momentive Performance Materials, trade name: XE-14-C2042, elastic modulus (room temperature): 0 on the optical semiconductor device mounting substrate using a dispenser. 0.03 MPa) was supplied by the potting method. Thereby, the sealing resin was filled in each recess.

  After the sealing resin is cured to form a sealing body, the optical semiconductor device continuous in a matrix is separated into pieces using a dicing device (manufactured by DISCO Corporation, product name: DAD381). A plurality of single optical semiconductor devices (SMD type LEDs) having one element were manufactured.

( Reference Example 2)
In the deburring process of Reference Example 1, instead of the potassium permanganate aqueous solution, a chromic acid-sulfuric acid aqueous solution (chromic acid concentration: 100 g / L, sulfuric acid concentration: 300 g / L, temperature: 45 ° C.) was used as the chemical solution. An optical semiconductor device was fabricated in the same manner as in Reference Example 1 except that the resin burrs were removed by immersing the substrate for mounting the optical semiconductor element device for 1 minute and washing with water (no neutralization treatment was performed).

(Example 3)
In the deburring process of Reference Example 1, an amide-based solution A (temperature: 50 ° C.) having the following composition was used as a chemical solution instead of the potassium permanganate aqueous solution, and the substrate for mounting an optical semiconductor element device was immersed in this chemical solution for 2 minutes. Then, an optical semiconductor device was produced in the same manner as in Reference Example 1 except that the resin burr was removed by washing with water (no neutralization treatment was performed).
<Composition of amide solution A>
N-methyl-2-pyrrolidone: 80 parts by mass of methanol solution of sodium hydroxide (sodium hydroxide concentration: 20% by mass): 20 parts by mass of tetramethylammonium chloride: 1 part by mass

( Reference Example 4)
In the deburring process of Reference Example 1, concentrated sulfuric acid (commercial reagent, concentration: 96%, temperature: 20 ° C.) was used as the chemical solution instead of the potassium permanganate aqueous solution, and the substrate for mounting the optical semiconductor element device was used as this chemical solution. An optical semiconductor device was fabricated in the same manner as in Reference Example 1 except that the resin burrs were removed by immersion in water and washing (no neutralization treatment was performed).

( Reference Example 5)
In the deburring process of Reference Example 1, an aqueous solution of potassium permanganate (concentration: 10 g / L, pH: 12, temperature: 50 ° C.) was used as a chemical solution, and the substrate for mounting an optical semiconductor element device was immersed in this chemical solution for 5 minutes. the resin burr is removed by washing with water, except for performing the neutralization treatment in the same manner as in reference example 1 to produce a photosemiconductor device in the same manner as in reference example 1.

(Example 6)
In the deburring process of Reference Example 1, an amide-based solution B (temperature: 50 ° C.) having the following composition was used as a chemical solution instead of an aqueous potassium permanganate solution, and the substrate for mounting an optical semiconductor element device was immersed in this chemical solution for 4 minutes. Then, an optical semiconductor device was produced in the same manner as in Reference Example 1 except that the resin burr was removed by washing with water (no neutralization treatment was performed).
<Composition of amide solution B>
N-methyl-2-pyrrolidone: 90 parts by mass Sodium hydroxide in methanol (sodium hydroxide concentration: 10% by mass): 10 parts by mass Tetramethylammonium chloride: 1 part by mass

In Reference Examples 1, 2, 4, 5, and Examples 3 and 6 , since the optical semiconductor device continuous in a matrix form is formed by using a soft transparent resin as a molded body sealing member, an optical semiconductor element The stress applied to the wire bond was alleviated and the reliability in the thermal stress applied in the manufacturing process was improved, and the peeling between the optical semiconductor mounting substrate and the sealing body was suppressed. Furthermore, the wall surface of the light reflecting layer was moderately roughened by the deburring step, the adhesive force between the light reflecting layer and the sealing body was improved, and the peeling between the optical semiconductor mounting substrate and the sealing body was suppressed. For this reason, the optical semiconductor devices continuous in a matrix are diced well, and a plurality of optical semiconductor devices can be obtained with high productivity.

(Comparative Example 1)
In the deburring process of Reference Example 1, instead of treatment with an aqueous potassium permanganate solution, resin was obtained by high-pressure media blasting and high-pressure water washing (air pressure: 0.2 MPa, particle concentration: 15 vol%, particles used: alumina # 220). An optical semiconductor device was fabricated in the same manner as in Reference Example 1 except that the burrs were removed.

(Reliability evaluation of optical semiconductor devices)
The following items were evaluated for the optical semiconductor devices obtained in Reference Examples 1, 2, 4, 5, Examples 3 and 6, and Comparative Example 1. Each evaluation result is shown in Table 1.

[Deburrability evaluation of optical semiconductor devices (appearance evaluation)]
The appearance of the optical semiconductor devices obtained in Examples , Reference Examples, and Comparative Examples was visually observed. The case where there is no damage such as a microcrack on the appearance of the optical semiconductor device is indicated as “A”, and the case where there is a slight damage such as a microcrack on the appearance of the optical semiconductor device is indicated as “B”. The case where there was a lot of damage was evaluated as “C”.

[Evaluation of leakage of transparent sealing resin]
In the manufacturing process of the optical semiconductor devices of Examples , Reference Examples, and Comparative Examples, it was confirmed whether or not resin leakage occurred when filling each concave portion of the optical semiconductor element mounting substrate with a transparent sealing resin. The resin leakage is caused by a micro crack generated at the interface between the optical semiconductor element mounting substrate and the lead frame due to damage in the deburring process, a hole is opened in the white resin layer, and the transparent sealing resin leaks from the hole. The case where resin leakage was not confirmed was evaluated as “A”, and the case where resin leakage was confirmed was evaluated as “C”.

[Evaluation of wire bond connection]
In the optical semiconductor devices obtained in Examples , Reference Examples, and Comparative Examples, it was evaluated whether the wire bonding connection between the connection terminal (conductor member) of the substrate for mounting an optical semiconductor element and the optical semiconductor element was sufficiently made. When the removal of the resin burr is insufficient, the connection between the connection terminal and the optical semiconductor element is insufficient. Specifically, by observing the wire pull break mode, the state of peeling at the Ag plating and wire bond interface is judged to be insufficiently connected and evaluated as “C”, and the state where the wire breaks is judged as a good connected state. Was evaluated as “A”.

As shown in Table 1, the wire bond connection could be made without any problem in all Examples , Reference Examples and Comparative Examples. Further, according to the manufacturing methods of Reference Examples 1, 2, 4, 5, and Examples 3 and 6 , the appearance damage of the optical semiconductor device is sufficiently suppressed, the transparent sealing resin does not leak, and the productivity An optical semiconductor device was successfully fabricated. On the other hand, in the manufacturing method of Comparative Example 1, the appearance damage of the optical semiconductor device was large, and leakage of the transparent sealing resin occurred.

DESCRIPTION OF SYMBOLS 10 ... Wiring member, 20 ... Optical semiconductor element, 30 ... Light reflection layer, 30a ... Through-hole, 30b ... Surface, 32 ... Recessed part, 40 ... Sealing body, 50 ... Resin burr, 70 ... Molded body, 100 ... Optical semiconductor apparatus.

Claims (3)

A light reflecting layer in which a plurality of through holes are formed by transfer molding using a thermosetting resin composition is formed on a wiring member, and a plurality of recesses formed by closing one opening of the through hole with the wiring member. Obtaining a formed molded body; and
Chemically removing a resin burr formed of the thermosetting resin composition generated on the surface of the wiring member using a chemical solution;
Plating the conductive member surface of the wiring member;
Placing each of the optical semiconductor elements in the recess,
Supplying a sealing resin into the recess in which the optical semiconductor element is disposed;
Curing the sealing resin;
Dividing the molded body to obtain a plurality of optical semiconductor devices; and
I have a,
A method for manufacturing an optical semiconductor device, wherein the chemical solution is an amide-based solution . A light reflecting layer in which a plurality of through holes are formed by transfer molding using a thermosetting resin composition is formed on a wiring member, and a plurality of recesses formed by closing one opening of the through hole with the wiring member. Obtaining a formed molded body; and
The resin burr formed of the thermosetting resin composition generated on the surface of the wiring member, possess a step of chemically removing using a chemical solution,
A method for manufacturing a substrate for mounting an optical semiconductor element , wherein the chemical solution is an amide-based solution . An optical semiconductor device manufactured using the manufacturing method according to claim 1 .

Images