JP5889760B2 - 基板の研磨異常検出方法および研磨装置 - Google Patents

基板の研磨異常検出方法および研磨装置 Download PDF

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Publication number
JP5889760B2
JP5889760B2 JP2012209499A JP2012209499A JP5889760B2 JP 5889760 B2 JP5889760 B2 JP 5889760B2 JP 2012209499 A JP2012209499 A JP 2012209499A JP 2012209499 A JP2012209499 A JP 2012209499A JP 5889760 B2 JP5889760 B2 JP 5889760B2
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Japan
Prior art keywords
polishing
wafer
substrate
tape
detection method
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JP2012209499A
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English (en)
Japanese (ja)
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JP2014061580A (ja
JP2014061580A5 (enExample
Inventor
哲二 戸川
哲二 戸川
関　正也
正也 関
宏行 竹中
宏行 竹中
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Ebara Corp
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Ebara Corp
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Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2012209499A priority Critical patent/JP5889760B2/ja
Priority to KR1020130110994A priority patent/KR101664532B1/ko
Priority to US14/034,488 priority patent/US9248543B2/en
Priority to TW102134256A priority patent/TWI584915B/zh
Priority to TW106112213A priority patent/TWI611871B/zh
Publication of JP2014061580A publication Critical patent/JP2014061580A/ja
Priority to US14/987,434 priority patent/US9782869B2/en
Publication of JP2014061580A5 publication Critical patent/JP2014061580A5/ja
Priority to JP2016027608A priority patent/JP6077152B2/ja
Application granted granted Critical
Publication of JP5889760B2 publication Critical patent/JP5889760B2/ja
Priority to KR1020160126049A priority patent/KR101810331B1/ko
Priority to US15/654,594 priority patent/US10343252B2/en
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/002—Machines or devices using grinding or polishing belts; Accessories therefor for grinding edges or bevels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
JP2012209499A 2012-09-24 2012-09-24 基板の研磨異常検出方法および研磨装置 Active JP5889760B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2012209499A JP5889760B2 (ja) 2012-09-24 2012-09-24 基板の研磨異常検出方法および研磨装置
KR1020130110994A KR101664532B1 (ko) 2012-09-24 2013-09-16 기판의 연마 이상 검출 방법 및 연마 장치
US14/034,488 US9248543B2 (en) 2012-09-24 2013-09-23 Method of detecting abnormality in polishing of a substrate and polishing apparatus
TW102134256A TWI584915B (zh) 2012-09-24 2013-09-24 Method for detecting abrasive anomaly of substrate and grinding device
TW106112213A TWI611871B (zh) 2012-09-24 2013-09-24 基板的研磨異常檢測方法及研磨裝置
US14/987,434 US9782869B2 (en) 2012-09-24 2016-01-04 Apparatus for detecting abnormality in polishing of a substrate
JP2016027608A JP6077152B2 (ja) 2012-09-24 2016-02-17 研磨装置
KR1020160126049A KR101810331B1 (ko) 2012-09-24 2016-09-30 연마 장치
US15/654,594 US10343252B2 (en) 2012-09-24 2017-07-19 Polishing apparatus for detecting abnormality in polishing of a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012209499A JP5889760B2 (ja) 2012-09-24 2012-09-24 基板の研磨異常検出方法および研磨装置

Related Child Applications (1)

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JP2016027608A Division JP6077152B2 (ja) 2012-09-24 2016-02-17 研磨装置

Publications (3)

Publication Number Publication Date
JP2014061580A JP2014061580A (ja) 2014-04-10
JP2014061580A5 JP2014061580A5 (enExample) 2016-01-28
JP5889760B2 true JP5889760B2 (ja) 2016-03-22

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JP2012209499A Active JP5889760B2 (ja) 2012-09-24 2012-09-24 基板の研磨異常検出方法および研磨装置
JP2016027608A Active JP6077152B2 (ja) 2012-09-24 2016-02-17 研磨装置

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JP2016027608A Active JP6077152B2 (ja) 2012-09-24 2016-02-17 研磨装置

Country Status (4)

Country Link
US (3) US9248543B2 (enExample)
JP (2) JP5889760B2 (enExample)
KR (2) KR101664532B1 (enExample)
TW (2) TWI611871B (enExample)

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JP2015006709A (ja) * 2013-06-25 2015-01-15 株式会社ディスコ ウエーハの研削方法及び研削装置
JP2016058675A (ja) 2014-09-12 2016-04-21 株式会社東芝 研磨装置および半導体ウェハの研磨方法
WO2016068327A1 (ja) * 2014-10-31 2016-05-06 株式会社 荏原製作所 ワークピースを研磨するための化学機械研磨装置
JP2017148931A (ja) * 2016-02-19 2017-08-31 株式会社荏原製作所 研磨装置および研磨方法
JP2018114580A (ja) * 2017-01-17 2018-07-26 株式会社ディスコ ウエーハの加工方法及び切削装置
JP6920849B2 (ja) * 2017-03-27 2021-08-18 株式会社荏原製作所 基板処理方法および装置
CN108255129B (zh) * 2018-01-15 2020-08-28 中国工程物理研究院机械制造工艺研究所 一种工件抛光检测方法
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JP7047797B2 (ja) * 2019-02-25 2022-04-05 株式会社Sumco 貼り合わせウェーハのテラス加工方法及びテラス加工装置
IT201900003011A1 (it) * 2019-03-01 2020-09-01 Soltek S R L Macchina per la rettifica di elementi lastriformi e relativo metodo
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JP7278153B2 (ja) * 2019-06-04 2023-05-19 東京エレクトロン株式会社 基板加工装置、および基板加工方法
CN111761420B (zh) * 2020-06-16 2021-10-15 上海中欣晶圆半导体科技有限公司 一种提高硅片倒角宽幅精度的方法
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JP2024070925A (ja) * 2022-11-14 2024-05-24 株式会社荏原製作所 研磨装置
CN119369244B (zh) * 2024-12-30 2025-04-15 华海清科股份有限公司 晶圆边缘抛光方法和抛光装置

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Also Published As

Publication number Publication date
US10343252B2 (en) 2019-07-09
KR20160119019A (ko) 2016-10-12
JP2014061580A (ja) 2014-04-10
US20140087627A1 (en) 2014-03-27
TW201726322A (zh) 2017-08-01
KR101664532B1 (ko) 2016-10-10
TWI584915B (zh) 2017-06-01
US9248543B2 (en) 2016-02-02
TW201417952A (zh) 2014-05-16
JP6077152B2 (ja) 2017-02-08
TWI611871B (zh) 2018-01-21
US20160114455A1 (en) 2016-04-28
JP2016112683A (ja) 2016-06-23
US9782869B2 (en) 2017-10-10
KR101810331B1 (ko) 2017-12-18
US20170312879A1 (en) 2017-11-02
KR20140040012A (ko) 2014-04-02

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