JP5866086B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5866086B2
JP5866086B2 JP2010225297A JP2010225297A JP5866086B2 JP 5866086 B2 JP5866086 B2 JP 5866086B2 JP 2010225297 A JP2010225297 A JP 2010225297A JP 2010225297 A JP2010225297 A JP 2010225297A JP 5866086 B2 JP5866086 B2 JP 5866086B2
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Japan
Prior art keywords
film
silicon oxide
region
silicon
substrate
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JP2010225297A
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Japanese (ja)
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JP2011100985A (ja
JP2011100985A5 (enExample
Inventor
竹村　保彦
保彦 竹村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2010225297A priority Critical patent/JP5866086B2/ja
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Publication of JP2011100985A5 publication Critical patent/JP2011100985A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon

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  • Thin Film Transistor (AREA)
JP2010225297A 2009-10-06 2010-10-05 半導体装置の作製方法 Expired - Fee Related JP5866086B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010225297A JP5866086B2 (ja) 2009-10-06 2010-10-05 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009232236 2009-10-06
JP2009232236 2009-10-06
JP2010225297A JP5866086B2 (ja) 2009-10-06 2010-10-05 半導体装置の作製方法

Publications (3)

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JP2011100985A JP2011100985A (ja) 2011-05-19
JP2011100985A5 JP2011100985A5 (enExample) 2013-10-31
JP5866086B2 true JP5866086B2 (ja) 2016-02-17

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JP2010225297A Expired - Fee Related JP5866086B2 (ja) 2009-10-06 2010-10-05 半導体装置の作製方法

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US (1) US8021960B2 (enExample)
JP (1) JP5866086B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014020906A1 (ja) * 2012-07-30 2014-02-06 住友化学株式会社 複合基板の製造方法および半導体結晶層形成基板の製造方法
ITTO20120976A1 (it) * 2012-11-09 2014-05-10 St Microelectronics Srl Procedimento per la fabbricazione di un cappuccio per una struttura di incapsulamento di dispositivi elettronici e cappuccio per una struttura di incapsulamento di dispositivi elettronici
WO2014119178A1 (ja) * 2013-01-30 2014-08-07 京セラ株式会社 実装構造体の製造方法
US9012912B2 (en) 2013-03-13 2015-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Wafers, panels, semiconductor devices, and glass treatment methods
US9698176B1 (en) * 2013-11-05 2017-07-04 Ananda H. Kumar Silicon-based backplane structures and methods for display applications
CN204270266U (zh) * 2014-02-28 2015-04-15 宸鸿科技(厦门)有限公司 一种复合基板结构及具有复合基板结构的触控面板
CN104658891B (zh) * 2015-03-03 2019-03-15 京东方科技集团股份有限公司 低温多晶硅薄膜的制备方法、薄膜晶体管及显示装置
US9841833B2 (en) * 2015-06-30 2017-12-12 Lg Display Co., Ltd. Touch sensor integrated display device
WO2020194737A1 (ja) * 2019-03-28 2020-10-01 シャープ株式会社 電子デバイスの製造方法および電子デバイス
KR20220075031A (ko) * 2020-11-26 2022-06-07 삼성디스플레이 주식회사 발광 소자의 제조 방법 및 표시 장치의 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5757456A (en) 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP2003282885A (ja) * 2002-03-26 2003-10-03 Sharp Corp 半導体装置およびその製造方法
US7119365B2 (en) 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
KR101033797B1 (ko) * 2003-01-15 2011-05-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 그 박리 방법을 사용한 표시 장치의 제작 방법
JP4794810B2 (ja) * 2003-03-20 2011-10-19 シャープ株式会社 半導体装置の製造方法
TWI395253B (zh) 2004-12-28 2013-05-01 小柳光正 使用自我組織化功能之積體電路裝置的製造方法及製造裝置
JP5057700B2 (ja) * 2005-05-31 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2007105405A1 (ja) * 2006-03-10 2007-09-20 Matsushita Electric Industrial Co., Ltd. 異方性形状部材のマウント方法およびマウント装置と、電子デバイスの製造方法と、電子デバイスと、表示装置
JP5548356B2 (ja) * 2007-11-05 2014-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP2011100985A (ja) 2011-05-19
US20110081769A1 (en) 2011-04-07
US8021960B2 (en) 2011-09-20

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