JP5941285B2 - Soi基板の作製方法 - Google Patents
Soi基板の作製方法 Download PDFInfo
- Publication number
- JP5941285B2 JP5941285B2 JP2012006093A JP2012006093A JP5941285B2 JP 5941285 B2 JP5941285 B2 JP 5941285B2 JP 2012006093 A JP2012006093 A JP 2012006093A JP 2012006093 A JP2012006093 A JP 2012006093A JP 5941285 B2 JP5941285 B2 JP 5941285B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor layer
- semiconductor
- semiconductor substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 233
- 238000000034 method Methods 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 263
- 239000001257 hydrogen Substances 0.000 claims description 45
- 229910052739 hydrogen Inorganic materials 0.000 claims description 45
- 238000010884 ion-beam technique Methods 0.000 claims description 32
- 239000007789 gas Substances 0.000 claims description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 10
- 239000010935 stainless steel Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 198
- 239000010408 film Substances 0.000 description 130
- 239000012535 impurity Substances 0.000 description 70
- 239000002585 base Substances 0.000 description 51
- 229910052710 silicon Inorganic materials 0.000 description 36
- 230000007547 defect Effects 0.000 description 34
- 238000010438 heat treatment Methods 0.000 description 34
- 239000010703 silicon Substances 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 33
- 229910052760 oxygen Inorganic materials 0.000 description 31
- 239000001301 oxygen Substances 0.000 description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 30
- 239000000463 material Substances 0.000 description 29
- -1 hydrogen ions Chemical class 0.000 description 27
- 150000002500 ions Chemical class 0.000 description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 21
- 229910052799 carbon Inorganic materials 0.000 description 21
- 229910052581 Si3N4 Inorganic materials 0.000 description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 239000013078 crystal Substances 0.000 description 19
- 239000011521 glass Substances 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 238000005530 etching Methods 0.000 description 17
- 238000000926 separation method Methods 0.000 description 17
- 238000011282 treatment Methods 0.000 description 16
- 239000010936 titanium Substances 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910052719 titanium Inorganic materials 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000001819 mass spectrum Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001678 elastic recoil detection analysis Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- GPTXWRGISTZRIO-UHFFFAOYSA-N chlorquinaldol Chemical compound ClC1=CC(Cl)=C(O)C2=NC(C)=CC=C21 GPTXWRGISTZRIO-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Description
まずボンド基板として半導体基板110を用意する。半導体基板110としては、多結晶半導体基板または単結晶半導体基板を用いることができる。半導体基板110としては、例えば、多結晶または単結晶のシリコン基板やゲルマニウム基板、シリコンゲルマニウム基板、炭化シリコン基板などの第14族元素でなる半導体基板、またガリウムヒ素やインジウムリン等の化合物半導体基板が挙げられる。シリコン基板としては、直径5インチ(125mm)、直径6インチ(150mm)、直径8インチ(200mm)、直径12インチ(300mm)サイズの円形のものが代表的である。なお、形状は円形に限られず矩形状等に加工したシリコン基板を用いることも可能である。なお、特段の断りが無い限り、矩形には正方形が含まれることとする。以下の説明では、半導体基板110として、矩形状に加工された単結晶シリコン基板(シリコンウェハ)を用いる場合について示す。
図6(A)は、実施の形態1に示す方法で作製したSOI基板(図2(B)参照)の一部を示す断面図である。
101 絶縁層
103 水素イオン
110 半導体基板
112 脆化領域
114 絶縁層
116 半導体層
118 半導体層
120 半導体基板
122 半導体層
124 半導体層
126 絶縁膜
127 ゲート絶縁膜
128 ゲート電極
129 ゲート絶縁膜
130 ゲート電極
131 チャネル形成領域
132a 不純物領域
132b 不純物領域
133 チャネル形成領域
134a 不純物領域
134b 不純物領域
136a サイドウォール
136b サイドウォール
138a サイドウォール
138b サイドウォール
140a 高濃度不純物領域
140b 高濃度不純物領域
141a 低濃度不純物領域
141b 低濃度不純物領域
142a 高濃度不純物領域
142b 高濃度不純物領域
143a 低濃度不純物領域
143b 低濃度不純物領域
145 絶縁膜
146 絶縁膜
147a 導電膜
147b 導電膜
148a 導電膜
148b 導電膜
151 nチャネル型トランジスタ
152 pチャネル型トランジスタ
180 SOI基板
190 SOI基板
200 基板
Claims (3)
- イオンドーピング装置を用いて水素を含むガスをソースガスとしてH + 、H 2 + 、H 3 + の総量に対してH 3 + イオンの割合を80%以上として発生させ、
半導体基板中に、H2O+が前記H3 +に対して3%以下であるイオンビームを照射することにより、前記半導体基板中に脆化領域を形成し、
前記半導体基板の表面及びベース基板の表面を対向させ、接触させることにより、前記半導体基板及び前記ベース基板を貼り合わせ、
貼り合わせた前記半導体基板及び前記ベース基板を加熱し、前記脆化領域において分離させることにより、前記ベース基板上に半導体層を形成した後、
前記半導体基板に前記脆化領域を形成する工程を行い他のベース基板に半導体層を形成することを繰り返し行うことを特徴とするSOI基板の作製方法。 - イオンドーピング装置を用いて水素を含むガスをソースガスとしてH + 、H 2 + 、H 3 + の総量に対してH 3 + イオンの割合を80%以上として発生させ、
半導体基板中に、H2O+が前記H3 +に対して0.3%以下であるイオンビームを照射することにより、前記半導体基板中に脆化領域を形成し、
前記半導体基板の表面及びベース基板の表面を対向させ、接触させることにより、前記半導体基板及び前記ベース基板を貼り合わせ、
貼り合わせた前記半導体基板及び前記ベース基板を加熱し、前記脆化領域において分離させることにより、前記ベース基板上に半導体層を形成した後、
前記半導体基板に前記脆化領域を形成する工程を行い他のベース基板に半導体層を形成することを繰り返し行うことを特徴とするSOI基板の作製方法。 - 請求項1または請求項2において、
前記イオンドーピング装置は、チャンバにステンレス部材を用い、
前記チャンバの最表面は、クロム(Cr)リッチ化され、または酸化クロム(Cr 2 O 3 )膜が形成されていることを特徴とするSOI基板の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012006093A JP5941285B2 (ja) | 2011-01-21 | 2012-01-16 | Soi基板の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011010797 | 2011-01-21 | ||
JP2011010797 | 2011-01-21 | ||
JP2012006093A JP5941285B2 (ja) | 2011-01-21 | 2012-01-16 | Soi基板の作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012164975A JP2012164975A (ja) | 2012-08-30 |
JP5941285B2 true JP5941285B2 (ja) | 2016-06-29 |
Family
ID=46544472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012006093A Expired - Fee Related JP5941285B2 (ja) | 2011-01-21 | 2012-01-16 | Soi基板の作製方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8735263B2 (ja) |
JP (1) | JP5941285B2 (ja) |
KR (1) | KR20120085199A (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2012169060A1 (ja) * | 2011-06-10 | 2015-02-23 | 三菱電機株式会社 | 半導体装置の製造方法 |
TWI508771B (zh) * | 2014-03-25 | 2015-11-21 | 三緯國際立體列印科技股份有限公司 | 攪拌機構及三維印表機 |
US10020336B2 (en) | 2015-12-28 | 2018-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device using three dimentional (3D) integration |
DE102016114949B4 (de) * | 2016-08-11 | 2023-08-24 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauelements |
SG10201913850VA (en) * | 2017-07-14 | 2020-03-30 | Sunedison Semiconductor Ltd | Method of manufacture of a semiconductor on insulator structure |
JP2020013905A (ja) * | 2018-07-18 | 2020-01-23 | 住友重機械イオンテクノロジー株式会社 | イオン注入方法およびイオン注入装置 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3080867B2 (ja) * | 1995-09-25 | 2000-08-28 | 日本電気株式会社 | Soi基板の製造方法 |
JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってsoiウエーハを製造する方法およびこの方法で製造されたsoiウエーハ |
JP4507395B2 (ja) | 2000-11-30 | 2010-07-21 | セイコーエプソン株式会社 | 電気光学装置用素子基板の製造方法 |
US6583440B2 (en) | 2000-11-30 | 2003-06-24 | Seiko Epson Corporation | Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus |
JPWO2003046993A1 (ja) | 2001-11-29 | 2005-04-14 | 信越半導体株式会社 | Soiウェーハの製造方法 |
JP4289837B2 (ja) * | 2002-07-15 | 2009-07-01 | アプライド マテリアルズ インコーポレイテッド | イオン注入方法及びsoiウエハの製造方法 |
US7413596B2 (en) * | 2004-11-05 | 2008-08-19 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for the production of purified liquids and vapors |
US7608521B2 (en) * | 2006-05-31 | 2009-10-27 | Corning Incorporated | Producing SOI structure using high-purity ion shower |
CN101281912B (zh) | 2007-04-03 | 2013-01-23 | 株式会社半导体能源研究所 | Soi衬底及其制造方法以及半导体装置 |
CN101657882B (zh) | 2007-04-13 | 2012-05-30 | 株式会社半导体能源研究所 | 显示器件、用于制造显示器件的方法、以及soi衬底 |
US7767542B2 (en) | 2007-04-20 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd | Manufacturing method of SOI substrate |
KR101440930B1 (ko) | 2007-04-20 | 2014-09-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Soi 기판의 제작방법 |
EP1986230A2 (en) | 2007-04-25 | 2008-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing SOI substrate and method of manufacturing semiconductor device |
JP5289805B2 (ja) | 2007-05-10 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 半導体装置製造用基板の作製方法 |
US8803781B2 (en) | 2007-05-18 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US9059247B2 (en) | 2007-05-18 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate and method for manufacturing semiconductor device |
KR101400699B1 (ko) | 2007-05-18 | 2014-05-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기판 및 반도체 장치 및 그 제조 방법 |
US7875532B2 (en) | 2007-06-15 | 2011-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Substrate for manufacturing semiconductor device and manufacturing method thereof |
US7763502B2 (en) | 2007-06-22 | 2010-07-27 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device |
US7790563B2 (en) | 2007-07-13 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device and method for manufacturing semiconductor device |
JP2009088500A (ja) | 2007-09-14 | 2009-04-23 | Semiconductor Energy Lab Co Ltd | Soi基板の作製方法 |
JP5325404B2 (ja) | 2007-09-21 | 2013-10-23 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法 |
JP5252867B2 (ja) * | 2007-09-21 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 半導体基板の製造方法 |
KR101499175B1 (ko) | 2007-10-04 | 2015-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기판의 제조방법 |
JP5527956B2 (ja) | 2007-10-10 | 2014-06-25 | 株式会社半導体エネルギー研究所 | 半導体基板の製造方法 |
US8101501B2 (en) | 2007-10-10 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
JP5490393B2 (ja) | 2007-10-10 | 2014-05-14 | 株式会社半導体エネルギー研究所 | 半導体基板の製造方法 |
US8236668B2 (en) | 2007-10-10 | 2012-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
JP2009135448A (ja) | 2007-11-01 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体基板の作製方法及び半導体装置の作製方法 |
SG160300A1 (en) | 2008-10-03 | 2010-04-29 | Semiconductor Energy Lab | Method for manufacturing soi substrate |
JP5593107B2 (ja) | 2009-04-02 | 2014-09-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
SG183670A1 (en) | 2009-04-22 | 2012-09-27 | Semiconductor Energy Lab | Method of manufacturing soi substrate |
US8278187B2 (en) | 2009-06-24 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate by stepwise etching with at least two etching treatments |
WO2011043178A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate |
-
2012
- 2012-01-10 US US13/346,754 patent/US8735263B2/en not_active Expired - Fee Related
- 2012-01-16 JP JP2012006093A patent/JP5941285B2/ja not_active Expired - Fee Related
- 2012-01-18 KR KR1020120005587A patent/KR20120085199A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US20120190171A1 (en) | 2012-07-26 |
US8735263B2 (en) | 2014-05-27 |
JP2012164975A (ja) | 2012-08-30 |
KR20120085199A (ko) | 2012-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5548351B2 (ja) | 半導体装置の作製方法 | |
CN101887842B (zh) | Soi衬底的制造方法及soi衬底 | |
US7883988B2 (en) | Method for manufacturing semiconductor substrate | |
JP5941285B2 (ja) | Soi基板の作製方法 | |
JP5706670B2 (ja) | Soi基板の作製方法 | |
JP2011029609A (ja) | Soi基板の作製方法およびsoi基板 | |
JP5977947B2 (ja) | Soi基板の作製方法 | |
JP5926887B2 (ja) | Soi基板の作製方法 | |
JP5846727B2 (ja) | 半導体基板の作製方法 | |
US8936999B2 (en) | Manufacturing method of SOI substrate | |
US20120045883A1 (en) | Method for manufacturing soi substrate | |
JP5851113B2 (ja) | Soi基板の作製方法 | |
JP5587107B2 (ja) | Soi基板の作製方法 | |
JP2010103505A (ja) | Soi基板の作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20141218 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150929 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150930 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151008 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160517 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160520 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5941285 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |