JP5848079B2 - 弾性波デバイス及びその製造方法 - Google Patents

弾性波デバイス及びその製造方法 Download PDF

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Publication number
JP5848079B2
JP5848079B2 JP2011209289A JP2011209289A JP5848079B2 JP 5848079 B2 JP5848079 B2 JP 5848079B2 JP 2011209289 A JP2011209289 A JP 2011209289A JP 2011209289 A JP2011209289 A JP 2011209289A JP 5848079 B2 JP5848079 B2 JP 5848079B2
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JP
Japan
Prior art keywords
acoustic wave
wiring
electrode
substrate
seal ring
Prior art date
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Application number
JP2011209289A
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English (en)
Japanese (ja)
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JP2013070347A (ja
JP2013070347A5 (enExample
Inventor
友 栗原
友 栗原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
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Taiyo Yuden Co Ltd
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Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP2011209289A priority Critical patent/JP5848079B2/ja
Priority to US13/610,374 priority patent/US9065420B2/en
Publication of JP2013070347A publication Critical patent/JP2013070347A/ja
Publication of JP2013070347A5 publication Critical patent/JP2013070347A5/ja
Application granted granted Critical
Publication of JP5848079B2 publication Critical patent/JP5848079B2/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2011209289A 2011-09-26 2011-09-26 弾性波デバイス及びその製造方法 Active JP5848079B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011209289A JP5848079B2 (ja) 2011-09-26 2011-09-26 弾性波デバイス及びその製造方法
US13/610,374 US9065420B2 (en) 2011-09-26 2012-09-11 Fabrication method of acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011209289A JP5848079B2 (ja) 2011-09-26 2011-09-26 弾性波デバイス及びその製造方法

Publications (3)

Publication Number Publication Date
JP2013070347A JP2013070347A (ja) 2013-04-18
JP2013070347A5 JP2013070347A5 (enExample) 2015-05-07
JP5848079B2 true JP5848079B2 (ja) 2016-01-27

Family

ID=47910522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011209289A Active JP5848079B2 (ja) 2011-09-26 2011-09-26 弾性波デバイス及びその製造方法

Country Status (2)

Country Link
US (1) US9065420B2 (enExample)
JP (1) JP5848079B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5984912B2 (ja) * 2012-03-23 2016-09-06 オリンパス株式会社 積層型半導体の製造方法
KR101754200B1 (ko) * 2013-08-20 2017-07-05 가부시키가이샤 무라타 세이사쿠쇼 탄성 표면파 디바이스 및 그 제조 방법
JP6444787B2 (ja) * 2015-03-23 2018-12-26 太陽誘電株式会社 弾性波デバイスおよびその製造方法
JP6365435B2 (ja) * 2015-06-24 2018-08-01 株式会社村田製作所 弾性波装置
WO2023153272A1 (ja) * 2022-02-09 2023-08-17 株式会社村田製作所 弾性波装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09162690A (ja) * 1995-12-07 1997-06-20 Rohm Co Ltd 弾性表面波素子を有する装置およびその製造方法
JP3303791B2 (ja) * 1998-09-02 2002-07-22 株式会社村田製作所 電子部品の製造方法
JP3296356B2 (ja) * 1999-02-08 2002-06-24 松下電器産業株式会社 弾性表面波デバイスとその製造方法
JP2001110845A (ja) * 1999-10-04 2001-04-20 Mitsubishi Electric Corp フリップチップの実装構造
JP2003249840A (ja) * 2001-12-18 2003-09-05 Murata Mfg Co Ltd 弾性表面波装置
US7154206B2 (en) * 2002-07-31 2006-12-26 Kyocera Corporation Surface acoustic wave device and method for manufacturing same
JP2004129193A (ja) 2002-07-31 2004-04-22 Kyocera Corp 弾性表面波装置
JP4766831B2 (ja) * 2002-11-26 2011-09-07 株式会社村田製作所 電子部品の製造方法
KR100821483B1 (ko) * 2004-01-19 2008-04-10 가부시키가이샤 무라타 세이사쿠쇼 탄성 경계파 장치
JP4518870B2 (ja) * 2004-08-24 2010-08-04 京セラ株式会社 弾性表面波装置および通信装置
JP4057017B2 (ja) * 2005-01-31 2008-03-05 富士通株式会社 電子装置及びその製造方法
JP4986540B2 (ja) * 2005-08-24 2012-07-25 京セラ株式会社 弾性表面波装置及びその製造方法
JP4758197B2 (ja) * 2005-10-24 2011-08-24 京セラ株式会社 弾性表面波装置及び通信装置
JP2007158039A (ja) * 2005-12-06 2007-06-21 Epson Toyocom Corp 電子部品
JP2008113178A (ja) * 2006-10-30 2008-05-15 Hitachi Media Electoronics Co Ltd 中空封止素子およびその製造方法
JP2008135999A (ja) * 2006-11-28 2008-06-12 Fujitsu Media Device Kk 弾性波デバイスおよびその製造方法
JP4484934B2 (ja) * 2008-02-26 2010-06-16 富士通メディアデバイス株式会社 電子部品及びその製造方法
JP5261112B2 (ja) * 2008-09-29 2013-08-14 京セラ株式会社 弾性表面波素子、弾性表面波装置及び通信装置
WO2010086952A1 (ja) * 2009-01-30 2010-08-05 パナソニック株式会社 半導体装置及びその製造方法

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Publication number Publication date
JP2013070347A (ja) 2013-04-18
US9065420B2 (en) 2015-06-23
US20130076205A1 (en) 2013-03-28

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