JP5847738B2 - 基板処理方法、プログラム及びコンピュータ記憶媒体 - Google Patents

基板処理方法、プログラム及びコンピュータ記憶媒体 Download PDF

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Publication number
JP5847738B2
JP5847738B2 JP2013015301A JP2013015301A JP5847738B2 JP 5847738 B2 JP5847738 B2 JP 5847738B2 JP 2013015301 A JP2013015301 A JP 2013015301A JP 2013015301 A JP2013015301 A JP 2013015301A JP 5847738 B2 JP5847738 B2 JP 5847738B2
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Japan
Prior art keywords
polymer
wafer
resist
film
pattern
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JP2013015301A
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Japanese (ja)
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JP2014146740A (ja
JP2014146740A5 (enExample
Inventor
村松　誠
誠 村松
北野　高広
高広 北野
忠利 冨田
忠利 冨田
啓士 田内
啓士 田内
聡一郎 岡田
聡一郎 岡田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2013015301A priority Critical patent/JP5847738B2/ja
Priority to PCT/JP2014/051225 priority patent/WO2014119444A1/ja
Priority to KR1020157019983A priority patent/KR102122343B1/ko
Publication of JP2014146740A publication Critical patent/JP2014146740A/ja
Publication of JP2014146740A5 publication Critical patent/JP2014146740A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2013015301A 2013-01-30 2013-01-30 基板処理方法、プログラム及びコンピュータ記憶媒体 Active JP5847738B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013015301A JP5847738B2 (ja) 2013-01-30 2013-01-30 基板処理方法、プログラム及びコンピュータ記憶媒体
PCT/JP2014/051225 WO2014119444A1 (ja) 2013-01-30 2014-01-22 基板処理方法及びコンピュータ記憶媒体
KR1020157019983A KR102122343B1 (ko) 2013-01-30 2014-01-22 기판 처리 방법 및 컴퓨터 기억 매체

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013015301A JP5847738B2 (ja) 2013-01-30 2013-01-30 基板処理方法、プログラム及びコンピュータ記憶媒体

Publications (3)

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JP2014146740A JP2014146740A (ja) 2014-08-14
JP2014146740A5 JP2014146740A5 (enExample) 2015-03-19
JP5847738B2 true JP5847738B2 (ja) 2016-01-27

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JP2013015301A Active JP5847738B2 (ja) 2013-01-30 2013-01-30 基板処理方法、プログラム及びコンピュータ記憶媒体

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JP (1) JP5847738B2 (enExample)
KR (1) KR102122343B1 (enExample)
WO (1) WO2014119444A1 (enExample)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136028A (ja) * 1985-12-10 1987-06-19 Matsushita Electric Ind Co Ltd 有機膜のパタ−ン形成方法
JP4673266B2 (ja) * 2006-08-03 2011-04-20 日本電信電話株式会社 パターン形成方法及びモールド
JP5300799B2 (ja) * 2010-07-28 2013-09-25 株式会社東芝 パターン形成方法及びポリマーアロイ下地材料
JP5721164B2 (ja) * 2010-09-14 2015-05-20 東京応化工業株式会社 ブロックコポリマーを含む層のパターン形成方法
JP5885143B2 (ja) * 2010-10-07 2016-03-15 東京応化工業株式会社 ガイドパターン形成用ネガ型現像用レジスト組成物、ガイドパターン形成方法、ブロックコポリマーを含む層のパターン形成方法

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Publication number Publication date
KR20150114476A (ko) 2015-10-12
JP2014146740A (ja) 2014-08-14
KR102122343B1 (ko) 2020-06-12
WO2014119444A1 (ja) 2014-08-07

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