KR102122343B1 - 기판 처리 방법 및 컴퓨터 기억 매체 - Google Patents

기판 처리 방법 및 컴퓨터 기억 매체 Download PDF

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Publication number
KR102122343B1
KR102122343B1 KR1020157019983A KR20157019983A KR102122343B1 KR 102122343 B1 KR102122343 B1 KR 102122343B1 KR 1020157019983 A KR1020157019983 A KR 1020157019983A KR 20157019983 A KR20157019983 A KR 20157019983A KR 102122343 B1 KR102122343 B1 KR 102122343B1
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South Korea
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polymer
wafer
resist
film
substrate
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KR1020157019983A
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Korean (ko)
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KR20150114476A (ko
Inventor
마코토 무라마츠
타카히로 키타노
타다토시 도미타
케이지 타노우치
소이치로 오카다
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도쿄엘렉트론가부시키가이샤
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    • H01L21/0337—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H01L21/02118—
    • H01L21/0273—

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020157019983A 2013-01-30 2014-01-22 기판 처리 방법 및 컴퓨터 기억 매체 Active KR102122343B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013015301A JP5847738B2 (ja) 2013-01-30 2013-01-30 基板処理方法、プログラム及びコンピュータ記憶媒体
JPJP-P-2013-015301 2013-01-30
PCT/JP2014/051225 WO2014119444A1 (ja) 2013-01-30 2014-01-22 基板処理方法及びコンピュータ記憶媒体

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KR20150114476A KR20150114476A (ko) 2015-10-12
KR102122343B1 true KR102122343B1 (ko) 2020-06-12

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KR1020157019983A Active KR102122343B1 (ko) 2013-01-30 2014-01-22 기판 처리 방법 및 컴퓨터 기억 매체

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JP (1) JP5847738B2 (enExample)
KR (1) KR102122343B1 (enExample)
WO (1) WO2014119444A1 (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008036491A (ja) 2006-08-03 2008-02-21 Nippon Telegr & Teleph Corp <Ntt> パターン形成方法及びモールド
WO2012014700A1 (ja) 2010-07-28 2012-02-02 株式会社 東芝 パターン形成方法及びポリマーアロイ下地材料
JP2012061531A (ja) 2010-09-14 2012-03-29 Tokyo Ohka Kogyo Co Ltd ブロックコポリマーを含む層のパターン形成方法
WO2012046770A1 (ja) 2010-10-07 2012-04-12 東京応化工業株式会社 ガイドパターン形成用ネガ型現像用レジスト組成物、ガイドパターン形成方法、ブロックコポリマーを含む層のパターン形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136028A (ja) * 1985-12-10 1987-06-19 Matsushita Electric Ind Co Ltd 有機膜のパタ−ン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008036491A (ja) 2006-08-03 2008-02-21 Nippon Telegr & Teleph Corp <Ntt> パターン形成方法及びモールド
WO2012014700A1 (ja) 2010-07-28 2012-02-02 株式会社 東芝 パターン形成方法及びポリマーアロイ下地材料
JP2012061531A (ja) 2010-09-14 2012-03-29 Tokyo Ohka Kogyo Co Ltd ブロックコポリマーを含む層のパターン形成方法
WO2012046770A1 (ja) 2010-10-07 2012-04-12 東京応化工業株式会社 ガイドパターン形成用ネガ型現像用レジスト組成物、ガイドパターン形成方法、ブロックコポリマーを含む層のパターン形成方法

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KR20150114476A (ko) 2015-10-12
JP2014146740A (ja) 2014-08-14
WO2014119444A1 (ja) 2014-08-07
JP5847738B2 (ja) 2016-01-27

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