JP5840213B2 - 太陽光発電装置及びその製造方法 - Google Patents

太陽光発電装置及びその製造方法 Download PDF

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Publication number
JP5840213B2
JP5840213B2 JP2013532699A JP2013532699A JP5840213B2 JP 5840213 B2 JP5840213 B2 JP 5840213B2 JP 2013532699 A JP2013532699 A JP 2013532699A JP 2013532699 A JP2013532699 A JP 2013532699A JP 5840213 B2 JP5840213 B2 JP 5840213B2
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JP
Japan
Prior art keywords
layer
back electrode
oxide
light absorption
conductive
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2013532699A
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English (en)
Japanese (ja)
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JP2013540358A (ja
JP2013540358A5 (enExample
Inventor
スン パク、ヒ
スン パク、ヒ
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
JP2013532699A 2010-10-05 2011-04-27 太陽光発電装置及びその製造方法 Expired - Fee Related JP5840213B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2010-0097055 2010-10-05
KR1020100097055A KR101154654B1 (ko) 2010-10-05 2010-10-05 태양광 발전장치 및 이의 제조방법
PCT/KR2011/003117 WO2012046934A1 (ko) 2010-10-05 2011-04-27 태양광 발전장치 및 이의 제조방법

Publications (3)

Publication Number Publication Date
JP2013540358A JP2013540358A (ja) 2013-10-31
JP2013540358A5 JP2013540358A5 (enExample) 2014-07-17
JP5840213B2 true JP5840213B2 (ja) 2016-01-06

Family

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JP2013532699A Expired - Fee Related JP5840213B2 (ja) 2010-10-05 2011-04-27 太陽光発電装置及びその製造方法

Country Status (6)

Country Link
US (1) US20130133740A1 (enExample)
EP (1) EP2533298A4 (enExample)
JP (1) JP5840213B2 (enExample)
KR (1) KR101154654B1 (enExample)
CN (1) CN103069578B (enExample)
WO (1) WO2012046934A1 (enExample)

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KR100451734B1 (ko) * 2001-12-29 2004-10-08 엘지전자 주식회사 이판식 투사광학계
WO2013018330A1 (ja) * 2011-07-29 2013-02-07 三洋電機株式会社 素子搭載用基板および半導体パワーモジュール
KR101783784B1 (ko) * 2011-11-29 2017-10-11 한국전자통신연구원 태양전지 모듈 및 그의 제조방법
KR101349432B1 (ko) * 2012-04-26 2014-01-10 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
US20140130858A1 (en) * 2012-11-15 2014-05-15 Samsung Sdi Co., Ltd. Solar cell
CN120826029A (zh) * 2025-09-17 2025-10-21 西安电子科技大学杭州研究院 一种功能可切换的氧化物异质结光电二极管及制备方法

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JPS59108370A (ja) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd 光起電力装置
US4667058A (en) * 1985-07-01 1987-05-19 Solarex Corporation Method of fabricating electrically isolated photovoltaic modules arrayed on a substrate and product obtained thereby
JP3651932B2 (ja) * 1994-08-24 2005-05-25 キヤノン株式会社 光起電力素子用裏面反射層及びその形成方法並びに光起電力素子及びその製造方法
JPH08125208A (ja) * 1994-10-19 1996-05-17 Sanyo Electric Co Ltd 光電変換装置
JPH1070297A (ja) 1996-08-27 1998-03-10 Mitsui Petrochem Ind Ltd 太陽電池の製造方法
JP4171179B2 (ja) * 2001-01-22 2008-10-22 三洋電機株式会社 光電変換素子
JP2002235177A (ja) * 2001-02-07 2002-08-23 Star Micronics Co Ltd ＳｎＯ膜及びその作製方法
JP3867230B2 (ja) * 2002-09-26 2007-01-10 本田技研工業株式会社 メカニカルスクライブ装置
US20050056312A1 (en) * 2003-03-14 2005-03-17 Young David L. Bifacial structure for tandem solar cells
JP4064340B2 (ja) * 2003-12-25 2008-03-19 昭和シェル石油株式会社 集積型薄膜太陽電池の製造方法
JP2006013028A (ja) * 2004-06-24 2006-01-12 National Institute Of Advanced Industrial & Technology 化合物太陽電池及びその製造方法
JP2006295104A (ja) * 2004-07-23 2006-10-26 Semiconductor Energy Lab Co Ltd 発光素子およびそれを用いた発光装置
JP2006092867A (ja) * 2004-09-22 2006-04-06 Toshiba Corp 有機エレクトロルミネッセンス表示装置
JP4730740B2 (ja) * 2006-01-30 2011-07-20 本田技研工業株式会社 太陽電池およびその製造方法
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CN100592536C (zh) * 2006-12-25 2010-02-24 刘津平 光电转换装置及其制造方法
CN101236997A (zh) * 2007-01-29 2008-08-06 北京行者多媒体科技有限公司 薄膜硅太阳能电池的背接触层
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KR20110008640A (ko) * 2009-07-20 2011-01-27 삼성전자주식회사 태양 전지 모듈 및 그 제조 방법
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Also Published As

Publication number Publication date
JP2013540358A (ja) 2013-10-31
EP2533298A1 (en) 2012-12-12
KR20120035512A (ko) 2012-04-16
KR101154654B1 (ko) 2012-06-11
CN103069578B (zh) 2016-08-10
WO2012046934A1 (ko) 2012-04-12
CN103069578A (zh) 2013-04-24
EP2533298A4 (en) 2018-02-21
US20130133740A1 (en) 2013-05-30

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