WO2012046934A1 - 태양광 발전장치 및 이의 제조방법 - Google Patents

태양광 발전장치 및 이의 제조방법 Download PDF

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WO2012046934A1
WO2012046934A1 PCT/KR2011/003117 KR2011003117W WO2012046934A1 WO 2012046934 A1 WO2012046934 A1 WO 2012046934A1 KR 2011003117 W KR2011003117 W KR 2011003117W WO 2012046934 A1 WO2012046934 A1 WO 2012046934A1
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Prior art keywords
layer
light absorbing
oxide
back electrode
conductive layer
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Ceased
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PCT/KR2011/003117
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English (en)
French (fr)
Korean (ko)
Inventor
박희선
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to US13/813,519 priority Critical patent/US20130133740A1/en
Priority to CN201180041589.4A priority patent/CN103069578B/zh
Priority to JP2013532699A priority patent/JP5840213B2/ja
Priority to EP11830820.4A priority patent/EP2533298A4/en
Publication of WO2012046934A1 publication Critical patent/WO2012046934A1/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Embodiment relates to a photovoltaic device and a method of manufacturing the same.
  • a CIGS solar photovoltaic device which is a pn heterojunction device having a substrate structure including a glass substrate, a metal back electrode layer, a p-type CIGS-based light absorbing layer, a high resistance buffer layer, an n-type window layer, and the like, is widely used.
  • Embodiments provide a photovoltaic device having improved mechanical and electrical properties and a method of manufacturing the same.
  • Photovoltaic device includes a substrate; A back electrode layer disposed on the substrate; A light absorbing layer disposed on the back electrode layer; A window layer disposed on the light absorbing layer; And a conductive layer interposed between the back electrode layer and the light absorbing layer and including a first conductivity type oxide.
  • Photovoltaic device includes a back electrode layer; An oxide layer of a first conductivity type disposed on the back electrode layer; A light absorbing layer of a first conductivity type disposed on the oxide layer; And a window layer of a second conductivity type disposed on the light absorbing layer.
  • Method of manufacturing a solar cell apparatus comprises the steps of forming a back electrode layer on a substrate; Depositing a first conductivity type oxide on the back electrode to form a conductive layer; Forming a light absorbing layer on the conductive layer; And forming a window layer on the light absorbing layer.
  • the solar cell apparatus includes a conductive layer interposed between the back electrode layer and the light absorbing layer.
  • the conductive layer includes a conductive oxide
  • the conductive layer may have high adhesion to both the back electrode layer and the light absorbing layer.
  • the conductive layer strengthens the bonding force between the back electrode layer and the light absorbing layer, and the solar cell apparatus according to the embodiment has improved mechanical properties.
  • the window layer and the back electrode layer may be connected to each other by a connecting portion.
  • the connecting portion is connected to the back electrode layer through the conductive layer.
  • the conductive layer may be formed immediately after the back electrode layer is formed, a material that interferes with the connection characteristic formed by an incidental reaction between the back electrode layer and the conductive layer is not interposed. Therefore, the connection characteristic between a conductive layer and a back electrode layer is improved.
  • both the conductive layer and the connecting portion may contain a conductive oxide. Thereby, the connection characteristic between a connection part and a conductive layer improves. As a result, the connection property of a connection part and a back electrode layer improves with a conductive layer.
  • the conductive layer may include a conductive p-type oxide such as a CIGS-based compound used in the light absorbing layer. Accordingly, the conductive layer can improve the connection property between the light absorbing layer and the back electrode layer.
  • the solar cell apparatus according to the embodiment has improved electrical characteristics.
  • the conductive layer covers the back electrode layer.
  • the back electrode layer can be protected by the conductive layer. Therefore, the solar cell apparatus according to the embodiment prevents corrosion of the back electrode layer and has improved durability.
  • the conductive layer may include sodium. Sodium contained in the conductive layer may diffuse into the light absorbing layer in the process of forming the light absorbing layer, thereby improving the properties of the light absorbing layer.
  • the solar cell apparatus according to the embodiment has improved mechanical and electrical characteristics.
  • FIG. 1 is a plan view illustrating a solar cell apparatus according to an embodiment.
  • FIG. 2 is a cross-sectional view illustrating a cross section taken along line AA ′ in FIG. 1.
  • 3 to 7 are cross-sectional views illustrating a process of manufacturing the solar cell apparatus according to the embodiment.
  • each substrate, layer, film, or electrode is described as being formed “on” or “under” of each substrate, layer, film, or electrode, etc.
  • "On” and “under” include both “directly” or “indirectly” formed through other components.
  • the criteria for the top or bottom of each component will be described with reference to the drawings. The size of each component in the drawings may be exaggerated for description, and does not mean a size that is actually applied.
  • FIG. 1 is a plan view illustrating a solar cell apparatus according to an embodiment.
  • FIG. 2 is a cross-sectional view taken along the line A-A 'of FIG. 1.
  • a photovoltaic device includes a support substrate 100, a back electrode layer 200, a conductive layer 300, a light absorbing layer 400, a buffer layer 500, and a high resistance buffer layer. 600, a window layer 700, and a plurality of connections 800.
  • the support substrate 100 has a plate shape, and the back electrode layer 200, the light absorbing layer 400, the buffer layer 500, the high resistance buffer layer 600, the window layer 700, and the connection parts are provided. Support 800.
  • the support substrate 100 may be an insulator.
  • the support substrate 100 may be a glass substrate, a plastic substrate, or a metal substrate.
  • the support substrate 100 may be a soda lime glass substrate.
  • the support substrate 100 may be transparent.
  • the support substrate 100 may be rigid or flexible.
  • the back electrode layer 200 is disposed on the support substrate 100.
  • the back electrode layer 200 may be a metal layer.
  • Examples of the material used for the back electrode layer 200 include a metal such as molybdenum.
  • the back electrode layer 200 may include two or more layers.
  • each of the layers may be formed of the same metal, or may be formed of different metals.
  • the conductive layer 300 is disposed on the back electrode layer 200.
  • the conductive layer 300 covers the entire top surface of the back electrode layer 200.
  • the conductive layer 300 is in direct contact with the back electrode layer 200. That is, the conductive layer 300 is connected to the back electrode layer 200 by direct contact.
  • the conductive layer 300 is directly connected to the light absorbing layer 400. That is, the upper surface of the conductive layer 300 is in direct contact with the light absorbing layer 400, and thus, the conductive layer 300 is connected to the light absorbing layer 400.
  • the conductive layer 300 includes a first conductivity type oxide.
  • the conductive layer 300 includes a p-type oxide.
  • the p-type oxide may be a metal oxide.
  • the p-type oxide may be selected from the group consisting of indium tin oxide, tin oxide and indium tin zinc oxide.
  • the p-type oxide may be a metal oxide doped with a group I element.
  • the p-type oxide may be sodium doped indium tin oxide, sodium doped tin oxide, or sodium doped indium zinc oxide.
  • the conductive layer 300 includes an oxide.
  • the conductive layer 300 may be formed of an oxide. That is, the conductive layer 300 is an oxide layer.
  • the conductive layer 300 is stable. That is, since the oxide is more chemically stable than the metal, the conductive layer 300 is more stable than the back electrode layer 200. Accordingly, the side reaction between the material forming the back electrode layer 200 and the p-type oxide hardly occurs in the process of forming the conductive layer 300.
  • the conductive layer 300 has high mechanical and electrical connection characteristics and is connected to the back electrode layer 200.
  • the conductive layer 300 may include sodium.
  • Sodium may be doped in the conductive layer 300 in the form of a dopant. That is, sodium may be doped into the p-type oxide.
  • Sodium may also be included in the back electrode layer 200 and the light absorbing layer 400. In this case, the concentration of sodium in the conductive layer 300 may be the highest.
  • the conductive layer 300 may have a thickness of about 1 nm to about 200 nm.
  • the conductive layer 300 is transparent and has a low resistance.
  • the conductive layer 300 may be patterned in the same manner as the back electrode layer 200.
  • First through holes TH1 are formed in the back electrode layer 200 and the conductive layer 300.
  • the first through holes TH1 are open regions that expose the top surface of the support substrate 100.
  • the first through holes TH1 may have a shape extending in one direction when viewed in a plan view.
  • the width of the first through holes TH1 may be about 80 ⁇ m to 200 ⁇ m.
  • the back electrode layer 200 is divided into a plurality of back electrodes by the first through holes TH1. That is, the back electrodes are defined by the first through holes TH1.
  • the back electrodes are spaced apart from each other by the first through holes TH1.
  • the back electrodes are arranged in a stripe shape.
  • the back electrodes may be arranged in a matrix form.
  • the first through holes TH1 may have a lattice shape when viewed in a plan view.
  • the light absorbing layer 400 is disposed on the back electrode layer 200.
  • the material included in the light absorbing layer 400 is filled in the first through holes TH1.
  • the light absorbing layer 400 includes a compound semiconductor of a first conductivity type.
  • the light absorbing layer 400 includes a p-type compound semiconductor. That is, the light absorbing layer 400 is a p-type semiconductor layer.
  • the light absorbing layer 400 includes a group I-III-VI compound.
  • the light absorbing layer 400 may be formed of a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) crystal structure, copper-indium-selenide-based, or copper-gallium-selenide It may have a system crystal structure.
  • the energy band gap of the light absorbing layer 400 may be about 1 eV to 1.8 eV.
  • the buffer layer 500 is disposed on the light absorbing layer 400.
  • the buffer layer 500 includes cadmium sulfide (CdS), and the energy band gap of the buffer layer 500 is about 2.2 eV to 2.4 eV.
  • the high resistance buffer layer 600 is disposed on the buffer layer 500.
  • the high resistance buffer layer 600 includes zinc oxide (i-ZnO) that is not doped with impurities.
  • the energy band gap of the high resistance buffer layer 600 is about 3.1 eV to 3.3 eV.
  • Second through holes TH2 are formed in the light absorbing layer 400, the buffer layer 500, and the high resistance buffer layer 600.
  • the second through holes TH2 pass through the light absorbing layer 400.
  • the second through holes TH2 are open regions exposing the top surface of the conductive layer 300.
  • the second through holes TH2 are formed adjacent to the first through holes TH1. That is, some of the second through holes TH2 are formed next to the first through holes TH1 when viewed in a plan view.
  • the width of the second through holes TH2 may be about 80 ⁇ m to about 200 ⁇ m.
  • the light absorbing layer 400 defines a plurality of light absorbing portions by the second through holes TH2. That is, the light absorbing layer 400 is divided into the light absorbing portions by the second through holes TH2.
  • the window layer 700 is disposed on the high resistance buffer layer 600.
  • the window layer 700 is transparent and is a conductor.
  • the resistance of the window layer 700 is higher than the resistance of the back electrode layer 200.
  • the resistance of the window layer 700 may be about 10 to 200 times greater than the resistance of the back electrode layer 200.
  • the window layer 700 includes an oxide.
  • the window layer 700 includes an oxide of the second conductivity type. That is, the window layer 700 is an n-type oxide layer.
  • the window layer may include a metal oxide doped with a group III element.
  • the window layer 700 may include aluminum doped zinc oxide (AZO) or gallium doped zinc oxide (GZO).
  • the window layer 700 may have a thickness of about 800 nm to about 1200 nm.
  • Third through holes TH3 are formed in the buffer layer 500, the high resistance buffer layer 600, and the window layer 700.
  • the third through holes TH3 are open regions exposing the top surface of the conductive layer 300.
  • the width of the third through holes TH3 may be about 80 ⁇ m to about 200 ⁇ m.
  • the third through holes TH3 are formed at positions adjacent to the second through holes TH2.
  • the third through holes TH3 are disposed next to the second through holes TH2. That is, when viewed in a plan view, the third through holes TH3 are arranged side by side next to the second through holes TH2.
  • the buffer layer 500 is divided into a plurality of buffers by the second through holes TH2 and the third through holes TH3.
  • the high resistance buffer layer 600 is divided into a plurality of high resistance buffers by the second through holes TH2 and the third through holes TH3.
  • the window layer 700 is divided into a plurality of windows by the third through holes TH3. That is, the windows are defined by the third through holes TH3.
  • the windows have a shape corresponding to the back electrodes. That is, the windows are arranged in a stripe shape. Alternatively, the windows may be arranged in a matrix form.
  • a plurality of cells C1, C2... are defined by the third through holes TH3.
  • the cells C1, C2... are defined by the second through holes TH2 and the third through holes TH3. That is, the photovoltaic device according to the embodiment is divided into the cells C1, C2... By the second through holes TH2 and the third through holes TH3.
  • connection parts 800 are disposed inside the second through holes TH2.
  • the connection parts 800 extend downward from the window layer 700 and are connected to the conductive layer 300.
  • the connection parts 800 are connected to the back electrode layer 200 through the conductive layer 300.
  • the connection parts 800 extend from the window of the first cell C1 and are connected to the back electrode of the second cell C2 through the conductive layer 300.
  • connection parts 800 connect adjacent cells to each other.
  • the connection parts 800 connect the windows and the back electrodes included in the cells adjacent to each other.
  • connection part 800 is formed integrally with the window layer 700. That is, the material used as the connection part 800 is the same as the material used as the window layer 700.
  • the conductive layer 300 may have high adhesion to both the back electrode layer 200 and the light absorbing layer 400. Therefore, the conductive layer 300 strengthens the bonding force between the back electrode layer 200 and the light absorbing layer 400, the solar cell apparatus according to the embodiment has improved mechanical properties.
  • the conductive layer 300 and the back electrode layer 200 have high connection characteristics and are connected. Since the conductive layer 300 and the connecting portion 800 both contain conductive oxides, the connection characteristics between the connecting portion 800 and the conductive layer 300 are improved. As a result, the connection characteristics of the connection part 800 and the back electrode layer 200 are improved by the conductive layer 300.
  • the conductive layer 300 may include a p-type oxide of the same conductivity type as the CIGS compound used in the light absorbing layer 400. Accordingly, the conductive layer 300 is connected to the light absorbing layer 400 with improved connection characteristics, and the conductive layer 300 improves the connection property between the light absorbing layer 400 and the back electrode layer 200. You can.
  • the solar cell apparatus according to the embodiment has improved electrical characteristics.
  • the back electrode layer 200 may be protected by the conductive layer 300.
  • the conductive layer 300 covers a portion of the back electrode layer 200 exposed to the third through holes TH3. Therefore, the conductive layer 300 prevents corrosion of the back electrode layer 200, and the solar cell apparatus according to the embodiment has improved durability.
  • the conductive layer 300 may include sodium. Sodium included in the conductive layer 300 may be diffused into the light absorbing layer 400 in the process of forming the light absorbing layer 400, thereby improving the characteristics of the light absorbing layer 400.
  • the solar cell apparatus according to the embodiment has improved mechanical and electrical characteristics.
  • 3 to 7 are cross-sectional views illustrating a process of manufacturing the solar cell apparatus according to the embodiment.
  • the description of the present manufacturing method reference is made to the description of the photovoltaic device described above. That is, the description of the photovoltaic device described above may be essentially combined with the description of the present manufacturing method.
  • the back electrode layer 200 is formed on the support substrate 100.
  • the back electrode layer 200 may be formed by a sputtering process using a molybdenum target.
  • the back electrode layer 200 may have a thickness of about 100 nm to about 500 nm.
  • an additional layer such as a diffusion barrier may be interposed between the support substrate 100 and the back electrode layer 200.
  • a conductive layer 300 is formed on the back electrode layer 200.
  • the conductive layer 300 may be formed by a sputtering process.
  • the conductive layer 300 may be formed using a sputtering target including a p-type oxide.
  • the sputtering target may be doped with sodium. That is, a p-type oxide doped with sodium may be used as the sputtering target.
  • Examples of the material used as the sputtering target include indium tin oxide doped with sodium, tin oxide doped with sodium, or indium tin zinc oxide doped with sodium.
  • the conductive layer 300 may be deposited to a thickness of about 1 nm to about 200 nm.
  • Sodium may be doped into the conductive layer 300.
  • the concentration of sodium doped in the sputtering target may vary depending on the thickness of the conductive layer 300. That is, when the thickness of the conductive layer 300 becomes thin, the concentration of the doped sodium may increase. On the contrary, when the thickness of the conductive layer 300 is thick, the concentration of the doped sodium may be lowered.
  • a plurality of first through holes TH1 are formed in the back electrode layer 200 and the conductive layer 300 by a laser. That is, the back electrode layer 200 and the conductive layer 300 are simultaneously patterned. Accordingly, the back electrode layer 200 is divided into a plurality of back electrodes by the first through holes.
  • the first through holes TH1 may expose an upper surface of the support substrate 100 and have a width of about 80 ⁇ m to about 200 ⁇ m.
  • a light absorbing layer 400, a buffer layer 500, and a high resistance buffer layer 600 are formed on the conductive layer 300.
  • the light absorbing layer 400 may be formed by a sputtering process or an evaporation method.
  • the light absorbing layer 400 For example, copper, indium, gallium, selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) while evaporating copper, indium, gallium, and selenium simultaneously or separately to form the light absorbing layer 400.
  • the method of forming the light absorbing layer 400 and the method of forming the metal precursor film by the selenization process are widely used.
  • a metal precursor film is formed on the back electrode 200 by a sputtering process using a copper target, an indium target, and a gallium target.
  • the metal precursor film is formed of a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) light absorbing layer 400 by a selenization process.
  • the sputtering process and the selenization process using the copper target, the indium target, and the gallium target may be simultaneously performed.
  • the CIS-based or CIG-based light absorbing layer 400 may be formed by using only a copper target and an indium target, or by a sputtering process and selenization process using a copper target and a gallium target.
  • cadmium sulfide is deposited by a sputtering process or a chemical bath depositon (CBD) or the like, and the buffer layer 500 is formed.
  • zinc oxide is deposited on the buffer layer 500 by a sputtering process, and the high resistance buffer layer 600 is formed.
  • the buffer layer 500 and the high resistance buffer layer 600 are deposited to a low thickness.
  • the thickness of the buffer layer 500 and the high resistance buffer layer 600 is about 1 nm to about 80 nm.
  • the second through holes TH2 may be formed by a mechanical device such as a tip or a laser device.
  • the light absorbing layer 400 and the buffer layer 500 may be patterned by a tip having a width of about 40 ⁇ m to about 180 ⁇ m.
  • the second through holes TH2 may be formed by a laser having a wavelength of about 200 to 600 nm.
  • the width of the second through holes TH2 may be about 80 ⁇ m to about 200 ⁇ m.
  • the second through holes TH2 are formed to expose a portion of the top surface of the conductive layer 300.
  • a window layer 700 is formed on the light absorbing layer 400 and inside the second through holes TH2. That is, the window layer 700 is formed by depositing a transparent conductive material on the high resistance buffer layer 600 and inside the second through holes TH2. In more detail, the window layer 700 may be formed by depositing zinc oxide doped with aluminum.
  • connection parts 800 are formed in the second through holes, respectively.
  • the window layer 700 is patterned to define a plurality of windows and a plurality of cells C1, C2...
  • the width of the third through holes TH3 may be about 80 ⁇ m to about 200 ⁇ m.
  • the third through holes TH3 are formed while exposing the top surface of the conductive layer 300.
  • the conductive layer 300 may be formed of an oxide to efficiently protect the back electrode layer 200. That is, the conductive layer 300 prevents the back electrode layer 200 from being exposed to the outside by the third through holes.
  • the photovoltaic device including the conductive layer 300 is formed.
  • the photovoltaic device according to the embodiment has improved electrical and mechanical properties.
  • Photovoltaic device and its manufacturing method according to the embodiment can be used in the field of photovoltaic power generation.

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  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
PCT/KR2011/003117 2010-10-05 2011-04-27 태양광 발전장치 및 이의 제조방법 Ceased WO2012046934A1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/813,519 US20130133740A1 (en) 2010-10-05 2011-04-27 Photovoltaic device and method for manufacturing same
CN201180041589.4A CN103069578B (zh) 2010-10-05 2011-04-27 光伏器件及其制造方法
JP2013532699A JP5840213B2 (ja) 2010-10-05 2011-04-27 太陽光発電装置及びその製造方法
EP11830820.4A EP2533298A4 (en) 2010-10-05 2011-04-27 Photovoltaic device and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0097055 2010-10-05
KR1020100097055A KR101154654B1 (ko) 2010-10-05 2010-10-05 태양광 발전장치 및 이의 제조방법

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US (1) US20130133740A1 (enExample)
EP (1) EP2533298A4 (enExample)
JP (1) JP5840213B2 (enExample)
KR (1) KR101154654B1 (enExample)
CN (1) CN103069578B (enExample)
WO (1) WO2012046934A1 (enExample)

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US20130133740A1 (en) 2013-05-30
CN103069578A (zh) 2013-04-24
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JP5840213B2 (ja) 2016-01-06
EP2533298A4 (en) 2018-02-21
KR101154654B1 (ko) 2012-06-11
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CN103069578B (zh) 2016-08-10

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