WO2012046934A1 - 태양광 발전장치 및 이의 제조방법 - Google Patents
태양광 발전장치 및 이의 제조방법 Download PDFInfo
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- WO2012046934A1 WO2012046934A1 PCT/KR2011/003117 KR2011003117W WO2012046934A1 WO 2012046934 A1 WO2012046934 A1 WO 2012046934A1 KR 2011003117 W KR2011003117 W KR 2011003117W WO 2012046934 A1 WO2012046934 A1 WO 2012046934A1
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- Prior art keywords
- layer
- light absorbing
- oxide
- back electrode
- conductive layer
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 27
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 23
- 229910052708 sodium Inorganic materials 0.000 claims description 23
- 239000011734 sodium Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000000872 buffer Substances 0.000 description 36
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000005477 sputtering target Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- Embodiment relates to a photovoltaic device and a method of manufacturing the same.
- a CIGS solar photovoltaic device which is a pn heterojunction device having a substrate structure including a glass substrate, a metal back electrode layer, a p-type CIGS-based light absorbing layer, a high resistance buffer layer, an n-type window layer, and the like, is widely used.
- Embodiments provide a photovoltaic device having improved mechanical and electrical properties and a method of manufacturing the same.
- Photovoltaic device includes a substrate; A back electrode layer disposed on the substrate; A light absorbing layer disposed on the back electrode layer; A window layer disposed on the light absorbing layer; And a conductive layer interposed between the back electrode layer and the light absorbing layer and including a first conductivity type oxide.
- Photovoltaic device includes a back electrode layer; An oxide layer of a first conductivity type disposed on the back electrode layer; A light absorbing layer of a first conductivity type disposed on the oxide layer; And a window layer of a second conductivity type disposed on the light absorbing layer.
- Method of manufacturing a solar cell apparatus comprises the steps of forming a back electrode layer on a substrate; Depositing a first conductivity type oxide on the back electrode to form a conductive layer; Forming a light absorbing layer on the conductive layer; And forming a window layer on the light absorbing layer.
- the solar cell apparatus includes a conductive layer interposed between the back electrode layer and the light absorbing layer.
- the conductive layer includes a conductive oxide
- the conductive layer may have high adhesion to both the back electrode layer and the light absorbing layer.
- the conductive layer strengthens the bonding force between the back electrode layer and the light absorbing layer, and the solar cell apparatus according to the embodiment has improved mechanical properties.
- the window layer and the back electrode layer may be connected to each other by a connecting portion.
- the connecting portion is connected to the back electrode layer through the conductive layer.
- the conductive layer may be formed immediately after the back electrode layer is formed, a material that interferes with the connection characteristic formed by an incidental reaction between the back electrode layer and the conductive layer is not interposed. Therefore, the connection characteristic between a conductive layer and a back electrode layer is improved.
- both the conductive layer and the connecting portion may contain a conductive oxide. Thereby, the connection characteristic between a connection part and a conductive layer improves. As a result, the connection property of a connection part and a back electrode layer improves with a conductive layer.
- the conductive layer may include a conductive p-type oxide such as a CIGS-based compound used in the light absorbing layer. Accordingly, the conductive layer can improve the connection property between the light absorbing layer and the back electrode layer.
- the solar cell apparatus according to the embodiment has improved electrical characteristics.
- the conductive layer covers the back electrode layer.
- the back electrode layer can be protected by the conductive layer. Therefore, the solar cell apparatus according to the embodiment prevents corrosion of the back electrode layer and has improved durability.
- the conductive layer may include sodium. Sodium contained in the conductive layer may diffuse into the light absorbing layer in the process of forming the light absorbing layer, thereby improving the properties of the light absorbing layer.
- the solar cell apparatus according to the embodiment has improved mechanical and electrical characteristics.
- FIG. 1 is a plan view illustrating a solar cell apparatus according to an embodiment.
- FIG. 2 is a cross-sectional view illustrating a cross section taken along line AA ′ in FIG. 1.
- 3 to 7 are cross-sectional views illustrating a process of manufacturing the solar cell apparatus according to the embodiment.
- each substrate, layer, film, or electrode is described as being formed “on” or “under” of each substrate, layer, film, or electrode, etc.
- "On” and “under” include both “directly” or “indirectly” formed through other components.
- the criteria for the top or bottom of each component will be described with reference to the drawings. The size of each component in the drawings may be exaggerated for description, and does not mean a size that is actually applied.
- FIG. 1 is a plan view illustrating a solar cell apparatus according to an embodiment.
- FIG. 2 is a cross-sectional view taken along the line A-A 'of FIG. 1.
- a photovoltaic device includes a support substrate 100, a back electrode layer 200, a conductive layer 300, a light absorbing layer 400, a buffer layer 500, and a high resistance buffer layer. 600, a window layer 700, and a plurality of connections 800.
- the support substrate 100 has a plate shape, and the back electrode layer 200, the light absorbing layer 400, the buffer layer 500, the high resistance buffer layer 600, the window layer 700, and the connection parts are provided. Support 800.
- the support substrate 100 may be an insulator.
- the support substrate 100 may be a glass substrate, a plastic substrate, or a metal substrate.
- the support substrate 100 may be a soda lime glass substrate.
- the support substrate 100 may be transparent.
- the support substrate 100 may be rigid or flexible.
- the back electrode layer 200 is disposed on the support substrate 100.
- the back electrode layer 200 may be a metal layer.
- Examples of the material used for the back electrode layer 200 include a metal such as molybdenum.
- the back electrode layer 200 may include two or more layers.
- each of the layers may be formed of the same metal, or may be formed of different metals.
- the conductive layer 300 is disposed on the back electrode layer 200.
- the conductive layer 300 covers the entire top surface of the back electrode layer 200.
- the conductive layer 300 is in direct contact with the back electrode layer 200. That is, the conductive layer 300 is connected to the back electrode layer 200 by direct contact.
- the conductive layer 300 is directly connected to the light absorbing layer 400. That is, the upper surface of the conductive layer 300 is in direct contact with the light absorbing layer 400, and thus, the conductive layer 300 is connected to the light absorbing layer 400.
- the conductive layer 300 includes a first conductivity type oxide.
- the conductive layer 300 includes a p-type oxide.
- the p-type oxide may be a metal oxide.
- the p-type oxide may be selected from the group consisting of indium tin oxide, tin oxide and indium tin zinc oxide.
- the p-type oxide may be a metal oxide doped with a group I element.
- the p-type oxide may be sodium doped indium tin oxide, sodium doped tin oxide, or sodium doped indium zinc oxide.
- the conductive layer 300 includes an oxide.
- the conductive layer 300 may be formed of an oxide. That is, the conductive layer 300 is an oxide layer.
- the conductive layer 300 is stable. That is, since the oxide is more chemically stable than the metal, the conductive layer 300 is more stable than the back electrode layer 200. Accordingly, the side reaction between the material forming the back electrode layer 200 and the p-type oxide hardly occurs in the process of forming the conductive layer 300.
- the conductive layer 300 has high mechanical and electrical connection characteristics and is connected to the back electrode layer 200.
- the conductive layer 300 may include sodium.
- Sodium may be doped in the conductive layer 300 in the form of a dopant. That is, sodium may be doped into the p-type oxide.
- Sodium may also be included in the back electrode layer 200 and the light absorbing layer 400. In this case, the concentration of sodium in the conductive layer 300 may be the highest.
- the conductive layer 300 may have a thickness of about 1 nm to about 200 nm.
- the conductive layer 300 is transparent and has a low resistance.
- the conductive layer 300 may be patterned in the same manner as the back electrode layer 200.
- First through holes TH1 are formed in the back electrode layer 200 and the conductive layer 300.
- the first through holes TH1 are open regions that expose the top surface of the support substrate 100.
- the first through holes TH1 may have a shape extending in one direction when viewed in a plan view.
- the width of the first through holes TH1 may be about 80 ⁇ m to 200 ⁇ m.
- the back electrode layer 200 is divided into a plurality of back electrodes by the first through holes TH1. That is, the back electrodes are defined by the first through holes TH1.
- the back electrodes are spaced apart from each other by the first through holes TH1.
- the back electrodes are arranged in a stripe shape.
- the back electrodes may be arranged in a matrix form.
- the first through holes TH1 may have a lattice shape when viewed in a plan view.
- the light absorbing layer 400 is disposed on the back electrode layer 200.
- the material included in the light absorbing layer 400 is filled in the first through holes TH1.
- the light absorbing layer 400 includes a compound semiconductor of a first conductivity type.
- the light absorbing layer 400 includes a p-type compound semiconductor. That is, the light absorbing layer 400 is a p-type semiconductor layer.
- the light absorbing layer 400 includes a group I-III-VI compound.
- the light absorbing layer 400 may be formed of a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) crystal structure, copper-indium-selenide-based, or copper-gallium-selenide It may have a system crystal structure.
- the energy band gap of the light absorbing layer 400 may be about 1 eV to 1.8 eV.
- the buffer layer 500 is disposed on the light absorbing layer 400.
- the buffer layer 500 includes cadmium sulfide (CdS), and the energy band gap of the buffer layer 500 is about 2.2 eV to 2.4 eV.
- the high resistance buffer layer 600 is disposed on the buffer layer 500.
- the high resistance buffer layer 600 includes zinc oxide (i-ZnO) that is not doped with impurities.
- the energy band gap of the high resistance buffer layer 600 is about 3.1 eV to 3.3 eV.
- Second through holes TH2 are formed in the light absorbing layer 400, the buffer layer 500, and the high resistance buffer layer 600.
- the second through holes TH2 pass through the light absorbing layer 400.
- the second through holes TH2 are open regions exposing the top surface of the conductive layer 300.
- the second through holes TH2 are formed adjacent to the first through holes TH1. That is, some of the second through holes TH2 are formed next to the first through holes TH1 when viewed in a plan view.
- the width of the second through holes TH2 may be about 80 ⁇ m to about 200 ⁇ m.
- the light absorbing layer 400 defines a plurality of light absorbing portions by the second through holes TH2. That is, the light absorbing layer 400 is divided into the light absorbing portions by the second through holes TH2.
- the window layer 700 is disposed on the high resistance buffer layer 600.
- the window layer 700 is transparent and is a conductor.
- the resistance of the window layer 700 is higher than the resistance of the back electrode layer 200.
- the resistance of the window layer 700 may be about 10 to 200 times greater than the resistance of the back electrode layer 200.
- the window layer 700 includes an oxide.
- the window layer 700 includes an oxide of the second conductivity type. That is, the window layer 700 is an n-type oxide layer.
- the window layer may include a metal oxide doped with a group III element.
- the window layer 700 may include aluminum doped zinc oxide (AZO) or gallium doped zinc oxide (GZO).
- the window layer 700 may have a thickness of about 800 nm to about 1200 nm.
- Third through holes TH3 are formed in the buffer layer 500, the high resistance buffer layer 600, and the window layer 700.
- the third through holes TH3 are open regions exposing the top surface of the conductive layer 300.
- the width of the third through holes TH3 may be about 80 ⁇ m to about 200 ⁇ m.
- the third through holes TH3 are formed at positions adjacent to the second through holes TH2.
- the third through holes TH3 are disposed next to the second through holes TH2. That is, when viewed in a plan view, the third through holes TH3 are arranged side by side next to the second through holes TH2.
- the buffer layer 500 is divided into a plurality of buffers by the second through holes TH2 and the third through holes TH3.
- the high resistance buffer layer 600 is divided into a plurality of high resistance buffers by the second through holes TH2 and the third through holes TH3.
- the window layer 700 is divided into a plurality of windows by the third through holes TH3. That is, the windows are defined by the third through holes TH3.
- the windows have a shape corresponding to the back electrodes. That is, the windows are arranged in a stripe shape. Alternatively, the windows may be arranged in a matrix form.
- a plurality of cells C1, C2... are defined by the third through holes TH3.
- the cells C1, C2... are defined by the second through holes TH2 and the third through holes TH3. That is, the photovoltaic device according to the embodiment is divided into the cells C1, C2... By the second through holes TH2 and the third through holes TH3.
- connection parts 800 are disposed inside the second through holes TH2.
- the connection parts 800 extend downward from the window layer 700 and are connected to the conductive layer 300.
- the connection parts 800 are connected to the back electrode layer 200 through the conductive layer 300.
- the connection parts 800 extend from the window of the first cell C1 and are connected to the back electrode of the second cell C2 through the conductive layer 300.
- connection parts 800 connect adjacent cells to each other.
- the connection parts 800 connect the windows and the back electrodes included in the cells adjacent to each other.
- connection part 800 is formed integrally with the window layer 700. That is, the material used as the connection part 800 is the same as the material used as the window layer 700.
- the conductive layer 300 may have high adhesion to both the back electrode layer 200 and the light absorbing layer 400. Therefore, the conductive layer 300 strengthens the bonding force between the back electrode layer 200 and the light absorbing layer 400, the solar cell apparatus according to the embodiment has improved mechanical properties.
- the conductive layer 300 and the back electrode layer 200 have high connection characteristics and are connected. Since the conductive layer 300 and the connecting portion 800 both contain conductive oxides, the connection characteristics between the connecting portion 800 and the conductive layer 300 are improved. As a result, the connection characteristics of the connection part 800 and the back electrode layer 200 are improved by the conductive layer 300.
- the conductive layer 300 may include a p-type oxide of the same conductivity type as the CIGS compound used in the light absorbing layer 400. Accordingly, the conductive layer 300 is connected to the light absorbing layer 400 with improved connection characteristics, and the conductive layer 300 improves the connection property between the light absorbing layer 400 and the back electrode layer 200. You can.
- the solar cell apparatus according to the embodiment has improved electrical characteristics.
- the back electrode layer 200 may be protected by the conductive layer 300.
- the conductive layer 300 covers a portion of the back electrode layer 200 exposed to the third through holes TH3. Therefore, the conductive layer 300 prevents corrosion of the back electrode layer 200, and the solar cell apparatus according to the embodiment has improved durability.
- the conductive layer 300 may include sodium. Sodium included in the conductive layer 300 may be diffused into the light absorbing layer 400 in the process of forming the light absorbing layer 400, thereby improving the characteristics of the light absorbing layer 400.
- the solar cell apparatus according to the embodiment has improved mechanical and electrical characteristics.
- 3 to 7 are cross-sectional views illustrating a process of manufacturing the solar cell apparatus according to the embodiment.
- the description of the present manufacturing method reference is made to the description of the photovoltaic device described above. That is, the description of the photovoltaic device described above may be essentially combined with the description of the present manufacturing method.
- the back electrode layer 200 is formed on the support substrate 100.
- the back electrode layer 200 may be formed by a sputtering process using a molybdenum target.
- the back electrode layer 200 may have a thickness of about 100 nm to about 500 nm.
- an additional layer such as a diffusion barrier may be interposed between the support substrate 100 and the back electrode layer 200.
- a conductive layer 300 is formed on the back electrode layer 200.
- the conductive layer 300 may be formed by a sputtering process.
- the conductive layer 300 may be formed using a sputtering target including a p-type oxide.
- the sputtering target may be doped with sodium. That is, a p-type oxide doped with sodium may be used as the sputtering target.
- Examples of the material used as the sputtering target include indium tin oxide doped with sodium, tin oxide doped with sodium, or indium tin zinc oxide doped with sodium.
- the conductive layer 300 may be deposited to a thickness of about 1 nm to about 200 nm.
- Sodium may be doped into the conductive layer 300.
- the concentration of sodium doped in the sputtering target may vary depending on the thickness of the conductive layer 300. That is, when the thickness of the conductive layer 300 becomes thin, the concentration of the doped sodium may increase. On the contrary, when the thickness of the conductive layer 300 is thick, the concentration of the doped sodium may be lowered.
- a plurality of first through holes TH1 are formed in the back electrode layer 200 and the conductive layer 300 by a laser. That is, the back electrode layer 200 and the conductive layer 300 are simultaneously patterned. Accordingly, the back electrode layer 200 is divided into a plurality of back electrodes by the first through holes.
- the first through holes TH1 may expose an upper surface of the support substrate 100 and have a width of about 80 ⁇ m to about 200 ⁇ m.
- a light absorbing layer 400, a buffer layer 500, and a high resistance buffer layer 600 are formed on the conductive layer 300.
- the light absorbing layer 400 may be formed by a sputtering process or an evaporation method.
- the light absorbing layer 400 For example, copper, indium, gallium, selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) while evaporating copper, indium, gallium, and selenium simultaneously or separately to form the light absorbing layer 400.
- the method of forming the light absorbing layer 400 and the method of forming the metal precursor film by the selenization process are widely used.
- a metal precursor film is formed on the back electrode 200 by a sputtering process using a copper target, an indium target, and a gallium target.
- the metal precursor film is formed of a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) light absorbing layer 400 by a selenization process.
- the sputtering process and the selenization process using the copper target, the indium target, and the gallium target may be simultaneously performed.
- the CIS-based or CIG-based light absorbing layer 400 may be formed by using only a copper target and an indium target, or by a sputtering process and selenization process using a copper target and a gallium target.
- cadmium sulfide is deposited by a sputtering process or a chemical bath depositon (CBD) or the like, and the buffer layer 500 is formed.
- zinc oxide is deposited on the buffer layer 500 by a sputtering process, and the high resistance buffer layer 600 is formed.
- the buffer layer 500 and the high resistance buffer layer 600 are deposited to a low thickness.
- the thickness of the buffer layer 500 and the high resistance buffer layer 600 is about 1 nm to about 80 nm.
- the second through holes TH2 may be formed by a mechanical device such as a tip or a laser device.
- the light absorbing layer 400 and the buffer layer 500 may be patterned by a tip having a width of about 40 ⁇ m to about 180 ⁇ m.
- the second through holes TH2 may be formed by a laser having a wavelength of about 200 to 600 nm.
- the width of the second through holes TH2 may be about 80 ⁇ m to about 200 ⁇ m.
- the second through holes TH2 are formed to expose a portion of the top surface of the conductive layer 300.
- a window layer 700 is formed on the light absorbing layer 400 and inside the second through holes TH2. That is, the window layer 700 is formed by depositing a transparent conductive material on the high resistance buffer layer 600 and inside the second through holes TH2. In more detail, the window layer 700 may be formed by depositing zinc oxide doped with aluminum.
- connection parts 800 are formed in the second through holes, respectively.
- the window layer 700 is patterned to define a plurality of windows and a plurality of cells C1, C2...
- the width of the third through holes TH3 may be about 80 ⁇ m to about 200 ⁇ m.
- the third through holes TH3 are formed while exposing the top surface of the conductive layer 300.
- the conductive layer 300 may be formed of an oxide to efficiently protect the back electrode layer 200. That is, the conductive layer 300 prevents the back electrode layer 200 from being exposed to the outside by the third through holes.
- the photovoltaic device including the conductive layer 300 is formed.
- the photovoltaic device according to the embodiment has improved electrical and mechanical properties.
- Photovoltaic device and its manufacturing method according to the embodiment can be used in the field of photovoltaic power generation.
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
Claims (17)
- 기판;상기 기판 상에 배치되는 이면전극층;상기 이면전극층 상에 배치되는 광 흡수층;상기 광 흡수층 상에 배치되는 윈도우층; 및상기 이면전극층 및 상기 광 흡수층 사이에 개재되고 제 1 도전형 산화물을 포함하는 도전층을 포함하는 태양광 발전장치.
- 제 1 항에 있어서, 상기 제 1 도전형 산화물은 p형 산화물을 포함하는 태양광 발전장치.
- 제 1 항에 있어서, 상기 도전층은 나트륨을 포함하는 태양광 발전장치.
- 제 1 항에 있어서, 상기 도전층은 인듐 틴 옥사이드, 틴 옥사이드 또는 인듐 틴 징크 옥사이드를 포함하는 태양광 발전장치.
- 제 1 항에 있어서, 상기 광 흡수층에는 상기 도전층을 노출하는 관통홈이 형성되고,상기 관통홈 내측에 배치되고, 상기 윈도우층으로부터 연장되며, 상기 도전층에 접속되는 접속부를 포함하는 태양광 발전장치.
- 제 5 항에 있어서, 상기 접속부는 상기 도전층을 통하여, 상기 이면전극층에 접속되는 태양광 발전장치.
- 제 1 항에 있어서, 상기 도전층의 두께는 1㎚ 내지 200㎚인 태양광 발전장치.
- 제 1 항에 있어서, 상기 광 흡수층은 상기 제 1 도전형 산화물과 같은 도전형을 가지는 물질을 포함하고,상기 윈도우층은 제 2 도전형의 물질을 포함하는 태양광 발전장치.
- 이면전극층;상기 이면전극층 상에 배치되는 제 1 도전형의 산화물층;상기 산화물층 상에 배치되는 제 1 도전형의 광 흡수층; 및상기 광 흡수층 상에 배치되는 제 2 도전형의 윈도우층을 포함하는 태양광 발전장치.
- 제 9 항에 있어서, 상기 산화물층은 Ⅰ족 원소가 도핑된 금속 산화물을 포함하는 태양광 발전장치.
- 제 10 항에 있어서, 상기 광 흡수층은 Ⅰ족-Ⅲ족-Ⅵ족계 화합물 반도체를 포함하고,상기 윈도우층은 Ⅲ족 원소가 도핑된 금속 산화물을 포함하는 태양광 발전장치.
- 제 10 항에 있어서, 상기 Ⅰ족 원소는 나트륨인 태양광 발전장치.
- 제 9 항에 있어서, 상기 산화물층의 두께는 약 1㎚ 내지 약 200㎚인 태양광 발전장치.
- 제 9 항에 있어서, 상기 윈도우층 및 상기 광 흡수층을 관통하는 제 3 관통홈을 포함하고,상기 제 3 관통홈은 상기 산화물층의 상면을 노출시키는 태양광 발전장치.
- 기판 상에 이면전극층을 형성하는 단계;상기 이면전극 상에 제 1 도전형 산화물을 증착하여 도전층을 형성하는 단계;상기 도전층 상에 광 흡수층을 형성하는 단계; 및상기 광 흡수층 상에 윈도우층을 형성하는 단계를 포함하는 태양광 발전장치의 제조방법.
- 제 15 항에 있어서, 상기 제 1 도전형 산화물은 인듐 틴 옥사이드, 틴 옥사이드 및 인듐 틴 징크 옥사이드로 구성되는 그룹으로부터 선택되고,상기 광 흡수층은 I-III-IV족 화합물을 포함하는 태양광 발전장치의 제조방법.
- 제 16 항에 있어서, 상기 광 흡수층에 상기 도전층의 상면을 노출하는 관통홈을 형성하는 단계;를 포함하며,상기 윈도우층을 형성하는 단계에서, 상기 관통홈 내측에 투명한 도전물질을 증착하는 단계를 포함하는 태양광 발전장치의 제조방법.
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CN201180041589.4A CN103069578B (zh) | 2010-10-05 | 2011-04-27 | 光伏器件及其制造方法 |
US13/813,519 US20130133740A1 (en) | 2010-10-05 | 2011-04-27 | Photovoltaic device and method for manufacturing same |
JP2013532699A JP5840213B2 (ja) | 2010-10-05 | 2011-04-27 | 太陽光発電装置及びその製造方法 |
EP11830820.4A EP2533298A4 (en) | 2010-10-05 | 2011-04-27 | Photovoltaic device and method for manufacturing same |
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KR10-2010-0097055 | 2010-10-05 |
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EP (1) | EP2533298A4 (ko) |
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US20140085834A1 (en) * | 2011-07-29 | 2014-03-27 | Sanyo Electric Co., Ltd. | Device mounting board and semiconductor power module |
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KR100451734B1 (ko) * | 2001-12-29 | 2004-10-08 | 엘지전자 주식회사 | 이판식 투사광학계 |
KR101783784B1 (ko) * | 2011-11-29 | 2017-10-11 | 한국전자통신연구원 | 태양전지 모듈 및 그의 제조방법 |
KR101349432B1 (ko) * | 2012-04-26 | 2014-01-10 | 엘지이노텍 주식회사 | 태양광 발전장치 및 이의 제조방법 |
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Also Published As
Publication number | Publication date |
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KR101154654B1 (ko) | 2012-06-11 |
US20130133740A1 (en) | 2013-05-30 |
JP5840213B2 (ja) | 2016-01-06 |
CN103069578A (zh) | 2013-04-24 |
EP2533298A4 (en) | 2018-02-21 |
CN103069578B (zh) | 2016-08-10 |
EP2533298A1 (en) | 2012-12-12 |
KR20120035512A (ko) | 2012-04-16 |
JP2013540358A (ja) | 2013-10-31 |
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