KR101154654B1 - 태양광 발전장치 및 이의 제조방법 - Google Patents

태양광 발전장치 및 이의 제조방법 Download PDF

Info

Publication number
KR101154654B1
KR101154654B1 KR1020100097055A KR20100097055A KR101154654B1 KR 101154654 B1 KR101154654 B1 KR 101154654B1 KR 1020100097055 A KR1020100097055 A KR 1020100097055A KR 20100097055 A KR20100097055 A KR 20100097055A KR 101154654 B1 KR101154654 B1 KR 101154654B1
Authority
KR
South Korea
Prior art keywords
layer
light absorbing
back electrode
conductive layer
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020100097055A
Other languages
English (en)
Korean (ko)
Other versions
KR20120035512A (ko
Inventor
박희선
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020100097055A priority Critical patent/KR101154654B1/ko
Priority to EP11830820.4A priority patent/EP2533298A4/en
Priority to JP2013532699A priority patent/JP5840213B2/ja
Priority to PCT/KR2011/003117 priority patent/WO2012046934A1/ko
Priority to CN201180041589.4A priority patent/CN103069578B/zh
Priority to US13/813,519 priority patent/US20130133740A1/en
Publication of KR20120035512A publication Critical patent/KR20120035512A/ko
Application granted granted Critical
Publication of KR101154654B1 publication Critical patent/KR101154654B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
KR1020100097055A 2010-10-05 2010-10-05 태양광 발전장치 및 이의 제조방법 Expired - Fee Related KR101154654B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020100097055A KR101154654B1 (ko) 2010-10-05 2010-10-05 태양광 발전장치 및 이의 제조방법
EP11830820.4A EP2533298A4 (en) 2010-10-05 2011-04-27 Photovoltaic device and method for manufacturing same
JP2013532699A JP5840213B2 (ja) 2010-10-05 2011-04-27 太陽光発電装置及びその製造方法
PCT/KR2011/003117 WO2012046934A1 (ko) 2010-10-05 2011-04-27 태양광 발전장치 및 이의 제조방법
CN201180041589.4A CN103069578B (zh) 2010-10-05 2011-04-27 光伏器件及其制造方法
US13/813,519 US20130133740A1 (en) 2010-10-05 2011-04-27 Photovoltaic device and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100097055A KR101154654B1 (ko) 2010-10-05 2010-10-05 태양광 발전장치 및 이의 제조방법

Publications (2)

Publication Number Publication Date
KR20120035512A KR20120035512A (ko) 2012-04-16
KR101154654B1 true KR101154654B1 (ko) 2012-06-11

Family

ID=45927907

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100097055A Expired - Fee Related KR101154654B1 (ko) 2010-10-05 2010-10-05 태양광 발전장치 및 이의 제조방법

Country Status (6)

Country Link
US (1) US20130133740A1 (enExample)
EP (1) EP2533298A4 (enExample)
JP (1) JP5840213B2 (enExample)
KR (1) KR101154654B1 (enExample)
CN (1) CN103069578B (enExample)
WO (1) WO2012046934A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100451734B1 (ko) * 2001-12-29 2004-10-08 엘지전자 주식회사 이판식 투사광학계

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5877356B2 (ja) * 2011-07-29 2016-03-08 パナソニックＩｐマネジメント株式会社 素子搭載用基板および半導体パワーモジュール
KR101783784B1 (ko) * 2011-11-29 2017-10-11 한국전자통신연구원 태양전지 모듈 및 그의 제조방법
KR101349432B1 (ko) * 2012-04-26 2014-01-10 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
US20140130858A1 (en) * 2012-11-15 2014-05-15 Samsung Sdi Co., Ltd. Solar cell
CN120826029A (zh) * 2025-09-17 2025-10-21 西安电子科技大学杭州研究院 一种功能可切换的氧化物异质结光电二极管及制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR840007316A (ko) * 1982-12-14 1984-12-06 다가까 다가시 광기전력 장치
JPH08125208A (ja) * 1994-10-19 1996-05-17 Sanyo Electric Co Ltd 光電変換装置
JPH1070297A (ja) 1996-08-27 1998-03-10 Mitsui Petrochem Ind Ltd 太陽電池の製造方法
KR20100098008A (ko) * 2009-02-27 2010-09-06 삼성전자주식회사 태양전지

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667058A (en) * 1985-07-01 1987-05-19 Solarex Corporation Method of fabricating electrically isolated photovoltaic modules arrayed on a substrate and product obtained thereby
JP3651932B2 (ja) * 1994-08-24 2005-05-25 キヤノン株式会社 光起電力素子用裏面反射層及びその形成方法並びに光起電力素子及びその製造方法
JP4171179B2 (ja) * 2001-01-22 2008-10-22 三洋電機株式会社 光電変換素子
JP2002235177A (ja) * 2001-02-07 2002-08-23 Star Micronics Co Ltd ＳｎＯ膜及びその作製方法
JP3867230B2 (ja) * 2002-09-26 2007-01-10 本田技研工業株式会社 メカニカルスクライブ装置
US20050056312A1 (en) * 2003-03-14 2005-03-17 Young David L. Bifacial structure for tandem solar cells
JP4064340B2 (ja) * 2003-12-25 2008-03-19 昭和シェル石油株式会社 集積型薄膜太陽電池の製造方法
JP2006013028A (ja) * 2004-06-24 2006-01-12 National Institute Of Advanced Industrial & Technology 化合物太陽電池及びその製造方法
JP2006295104A (ja) * 2004-07-23 2006-10-26 Semiconductor Energy Lab Co Ltd 発光素子およびそれを用いた発光装置
JP2006092867A (ja) * 2004-09-22 2006-04-06 Toshiba Corp 有機エレクトロルミネッセンス表示装置
JP4730740B2 (ja) * 2006-01-30 2011-07-20 本田技研工業株式会社 太陽電池およびその製造方法
US8389852B2 (en) * 2006-02-22 2013-03-05 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
JP2007335625A (ja) * 2006-06-15 2007-12-27 Matsushita Electric Ind Co Ltd 太陽電池
CN100592536C (zh) * 2006-12-25 2010-02-24 刘津平 光电转换装置及其制造方法
CN101236997A (zh) * 2007-01-29 2008-08-06 北京行者多媒体科技有限公司 薄膜硅太阳能电池的背接触层
AT10578U1 (de) * 2007-12-18 2009-06-15 Plansee Metall Gmbh Dunnschichtsolarzelle mit molybdan-haltiger ruckelektrodenschicht
JP4904311B2 (ja) * 2008-04-28 2012-03-28 株式会社カネカ 薄膜光電変換装置用透明導電膜付き基板の製造方法
JP5229901B2 (ja) * 2009-03-09 2013-07-03 富士フイルム株式会社 光電変換素子、及び太陽電池
TW201036180A (en) * 2009-03-26 2010-10-01 Ritdisplay Corp Photovoltaic cell structure
KR20110008640A (ko) * 2009-07-20 2011-01-27 삼성전자주식회사 태양 전지 모듈 및 그 제조 방법
MX2012002156A (es) * 2009-08-24 2012-04-02 First Solar Inc Oxido conductor transparente impurificado.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR840007316A (ko) * 1982-12-14 1984-12-06 다가까 다가시 광기전력 장치
JPH08125208A (ja) * 1994-10-19 1996-05-17 Sanyo Electric Co Ltd 光電変換装置
JPH1070297A (ja) 1996-08-27 1998-03-10 Mitsui Petrochem Ind Ltd 太陽電池の製造方法
KR20100098008A (ko) * 2009-02-27 2010-09-06 삼성전자주식회사 태양전지

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100451734B1 (ko) * 2001-12-29 2004-10-08 엘지전자 주식회사 이판식 투사광학계

Also Published As

Publication number Publication date
JP2013540358A (ja) 2013-10-31
EP2533298A1 (en) 2012-12-12
CN103069578A (zh) 2013-04-24
US20130133740A1 (en) 2013-05-30
WO2012046934A1 (ko) 2012-04-12
CN103069578B (zh) 2016-08-10
EP2533298A4 (en) 2018-02-21
JP5840213B2 (ja) 2016-01-06
KR20120035512A (ko) 2012-04-16

Similar Documents

Publication Publication Date Title
KR101210168B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101154654B1 (ko) 태양광 발전장치 및 이의 제조방법
CN104272470B (zh) 太阳能电池及其制造方法
KR101168810B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101114099B1 (ko) 태양광 발전장치 및 이의 제조방법
KR20120012325A (ko) 태양광 발전장치 및 이의 제조방법
KR101114079B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101349429B1 (ko) 태양광 발전장치
KR101154663B1 (ko) 태양광 발전장치
KR20110043358A (ko) 태양전지 및 이의 제조방법
KR101034146B1 (ko) 태양전지 및 이의 제조방법
KR101172178B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101210104B1 (ko) 태양광 발전장치
KR101806545B1 (ko) 태양전지 및 이의 제조방법
KR101765922B1 (ko) 태양전지 및 이의 제조방법
KR101283302B1 (ko) 태양전지 및 이의 제조방법
KR101220015B1 (ko) 태양전지 및 이의 제조방법
KR101210164B1 (ko) 태양전지 및 이의 제조방법
KR101144540B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101306527B1 (ko) 태양광 발전장치
KR101189366B1 (ko) 태양전지 및 이의 제조방법
KR101349525B1 (ko) 태양광 발전장치
KR101081222B1 (ko) 태양광 발전장치
KR101231398B1 (ko) 태양전지 및 이의 제조방법
KR101273123B1 (ko) 태양전지 및 이의 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

FPAY Annual fee payment

Payment date: 20150506

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20160504

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20170512

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180602

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180602

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000