KR840007316A - 광기전력 장치 - Google Patents

광기전력 장치 Download PDF

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KR840007316A
KR840007316A KR1019830005865A KR830005865A KR840007316A KR 840007316 A KR840007316 A KR 840007316A KR 1019830005865 A KR1019830005865 A KR 1019830005865A KR 830005865 A KR830005865 A KR 830005865A KR 840007316 A KR840007316 A KR 840007316A
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photovoltaic device
layer
light incident
group
incident side
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KR1019830005865A
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KR910001742B1 (ko
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요시히사(외 1) 다와다
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다가까 다가시
가네가우찌가가꾸고오교 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

내용 없음

Description

광기전력 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (16)

  1. 전극/PIN/전극의 구조를 갖는 PIN접합형 광기전력 장치에 있어서, 광입사측의 반대쪽에 위치한 P도는 N층은 약 1.8eV이상의 광학적 밴드 갭과 20℃에서 약 10-8(Ω.cm)-1이상의 암전도도를 갖는 반도체인 것을 특징으로 하는 광기전력 장치.
  2. 제1항에 있어서, 광입사측의 반대쪽에 위치한 이면 전극의 반사율이 70%이상인 것을 특징으로 하는 광기전력 장치.
  3. 제2항에 있어서, 상기 이면 전극은 Ag, A1, Ti―Ag, Ni 및 Cr등으로 구성되는 그룹에서 선택된 금속인 것을 특징으로 하는 광기전력 장치.
  4. 제1항에 있어서, 이면 전극과 반도체 사이에 금속산화물이 삽입되는 것을 특징으로 하는 광기전력 장치.
  5. 제4항에 있어서, 상기 금속 산화물의 광투과율은 약 80%이상인 것을 특징으로 하는 광기전력 장치.
  6. 제4항에 있어서, 상기 금속 산화물은 SnO2, In2O3, In2O3+SnO2로 구성되는 그룹에서 ; 선택된 도전성 금속 산화물의 층이거나 최소한 두 개 이상의 상기 층을 조합한 것을 특징으로 하는 광기전력 장치.
  7. 제4항에 있어서, 상기 금속 산화물은 두께가 10~100Å인 절연 금속 산화물인 것을 특징으로 하는 광기전력 장치.
  8. 제1항에 있어서, I층은 Si, Ge 및 Sn으로 구성되는 그룹에서 선택된 주요원소로 제조된 무정형 반도체이거나 Si, Ge, Sn, C, N 및 O의 그룹에서 선택된 최소한 두 개의 원소로 제조된 무정형 반도체인 것을 특징으로 하는 광기전력 장치.
  9. 제8항에 있어서, I층은 Si화합물, Ge화합물 및 Sn화합물로 구성되는 그룹에서 선택된 화합물의 혼합물로 그리고 하이드로카이본 및 카아본 플로라이드로 구성되는 그룹에서 선택된 화합물로 글로우 방전분해에 의해 얻어지는 것을 특징으로 하는 광기전력 장치.
  10. 제1항에 있어서, P, I, N층으로 구성되는 다수의 PIN유닛의 각각의 반복적으로 제공되는 다층 구조를 갖는 것을 특징으로 하는 광기전력 장치.
  11. 제10항에 있어서, 각 I층의 광학적 밴드 갭이 광입사측으로부터 차례로 감소하는 것을 특징으로 하는 광기전력 장치.
  12. 제1항에 있어서, 광입사측에 위치한 P 또는 N층은 광학적 밴드 갭이 약 1.85eV이상이고 암전도도가 약 10-8(Ω.cm)-1이상인 반도체인 것을 특징으로 하는 광기전력 장치.
  13. 제10항에 있어서, 광입사측에 위치한 P 또는 N층은 광학적 밴드 갭이 약 1.85eV이상이고 암전도도가 20℃에서 약 10-8(Ω.cm)-1이상인 반도체인 것을 특징으로 하는 광기전력 장치.
  14. 제1항에 있어서, 광입사측의 반대쪽에 위치한 P 또는 N층은 무정형 반도체이거나 a―SiC:H, a―SiC:F:H, a―SiCN:H, a―SiCN:F:H, a―SiN:H, a―SiN:F:H, a―SiO:F:H, a―SiON:H 및 a―SiON:F:H등으로부터 선택된 미결정상을 포함하는 무정형 반도체인 것을 특징으로 하는 광기전력 장치.
  15. 제14항에 있어서, I층은 a―Si:H 또는 a―Si:F:H인 것을 특징으로 하는 광기전력 장치.
  16. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830005865A 1982-12-14 1983-12-10 광기전력 장치 KR910001742B1 (ko)

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JP57219862A JPS59108370A (ja) 1982-12-14 1982-12-14 光起電力装置
JP219862 1982-12-14

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KR840007316A true KR840007316A (ko) 1984-12-06
KR910001742B1 KR910001742B1 (ko) 1991-03-22

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US (1) US4476346A (ko)
EP (1) EP0111247B1 (ko)
JP (1) JPS59108370A (ko)
KR (1) KR910001742B1 (ko)
AU (1) AU567463B2 (ko)
CA (1) CA1212444A (ko)
DE (1) DE3381867D1 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101154654B1 (ko) * 2010-10-05 2012-06-11 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법

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Publication number Publication date
CA1212444A (en) 1986-10-07
KR910001742B1 (ko) 1991-03-22
US4476346A (en) 1984-10-09
EP0111247B1 (en) 1990-09-05
AU567463B2 (en) 1987-11-19
DE3381867D1 (de) 1990-10-11
EP0111247A2 (en) 1984-06-20
AU2178783A (en) 1984-06-21
EP0111247A3 (en) 1986-08-13
JPS59108370A (ja) 1984-06-22

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